WO2002004368A1 - Method and device for producing rotationally symmetrical quartz glass crucibles - Google Patents
Method and device for producing rotationally symmetrical quartz glass crucibles Download PDFInfo
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- WO2002004368A1 WO2002004368A1 PCT/EP2001/007858 EP0107858W WO0204368A1 WO 2002004368 A1 WO2002004368 A1 WO 2002004368A1 EP 0107858 W EP0107858 W EP 0107858W WO 0204368 A1 WO0204368 A1 WO 0204368A1
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- quartz glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
- C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
Definitions
- the invention relates to a method for producing rotationally symmetrical quartz glass crucibles, in which an arc is generated by means of an electrode arrangement consisting of one or more anodes and a cathode, and thus a wall or a section of a wall of the quartz glass crucible rotating here is heated. Furthermore, the invention relates to a device for performing the method.
- a method and a device of the type mentioned are widely used in practice due to their high cost-effectiveness.
- a melt mold set in rotation is partially filled with an SiO 2 grain, which can be a natural or synthetic SiO 2 grain.
- SiO 2 grain which can be a natural or synthetic SiO 2 grain.
- a template With the help of a template, a preform of the later quartz glass crucible is created from the grain during rotation. An arc is then ignited by means of the electrode arrangement and guided along the rotating wall of the quartz glass crucible in different planes, the quartz glass grain being melted into a glassy wall in the form of the quartz glass crucible.
- the quartz glass crucible After the quartz glass crucible has cooled, its final shape has already been created, the inside of the wall being glazed, while SiO 2 grain still adheres to the outside of the wall, which is rubbed off or ground off in a subsequent working step. The outside is unglazed.
- Such a method is also the subject of DE 197 10 672 A1, in which a layer-like structure with special properties is additionally produced by sprinkling in SiO 2 granules with other constituents. It is of fundamental importance for the method to maintain a rotational speed of the melting mold, which is determined in particular by the geometric dimensions of the quartz glass crucible, because the centrifugal forces that occur keep the SiO 2 grain size in the shape preformed by means of a template. An inadequate speed with correspondingly low centrifugal forces means that the loose SiO 2 grain cannot be held in the desired position and partially slides to the bottom in the melt mold. In contrast, an excessively high speed leads to the bottom layer of the quartz glass crucible being displaced outwards and thereby tearing open. The speed is therefore only variable to a very limited extent.
- the invention has for its object to develop a method of the type mentioned in such a way that the temperature difference occurring can be significantly reduced regardless of the speed of rotation of the rotating quartz glass crucible, in order to largely rule out undesirable evaporation and blistering due to excessive heating or cooling to be able to. Furthermore, a device for performing the method is to be created.
- the first-mentioned object is achieved in that a further arc is formed by at least one further electrode arrangement consisting of one or more anodes and a cathode, whereby a further section of the wall of the quartz glass crucible is heated.
- each individual electrode arrangement can be operated with a reduced thermal output. Evaporation, especially when sprinkling in the SiO 2 grain size, can therefore be largely ruled out.
- the duration of the cooling phase can be reached until a respective section of the wall again in a subsequent heating zone of the next Electrode arrangement occurs, can be significantly shortened. The temperature differences that occur are thus considerably reduced.
- the thickness of an inner layer produced by sprinkling in the SiO 2 grain can be increased at the same time, the portion of the SiO 2 grain evaporating at higher thermal output according to the prior art also being available to build up the inner layer to a greater extent.
- the additional effort for suctioning off the evaporating constituents of the SiO 2 grain is also eliminated, so that extensive automation of the manufacturing process can be realized. It also shortens the duration of the manufacturing process, which means better utilization of the plant and thus an increase in cost-effectiveness.
- the electrode arrangement heats different sections that are spaced apart in the direction of the axis of rotation of the quartz glass crucible. Due to the electrode arrangements provided for this purpose in a different vertical position, a large-scale heat input and thus a shortening of the process duration can be achieved. At the same time, a more uniform heating of the quartz glass crucible is achieved with a correspondingly improved quality.
- the second object mentioned, to create a device for producing a rotationally symmetrical quartz glass crucible by heating in sections by means of an electrode arrangement provided for generating an arc, consisting of one or more anodes and a cathode, the quartz glass crucible being rotatable about its axis of rotation, is achieved according to the invention that the device, in addition to the first electrode arrangement, is equipped with at least one further electrode arrangement consisting of one or more anodes and a cathode, which is inclined towards a section of the quartz glass crucible facing away from the first electrode arrangement.
- the temperature of the quartz glass crucible can be kept at a comparatively high level irrespective of the rotational speed, so that the temperature differences that occur are significantly lower.
- additional measures for suctioning off the evaporated constituents can be omitted, on the other hand the usable portion of the scattered SiO 2 grain increases, so that a faster build-up of an inner layer with a considerably greater layer thickness is achieved becomes.
- an essentially bubble-free inner layer is created, which means that higher quality requirements can be easily achieved.
- crucible diameters can be made much larger than was previously possible according to the prior art.
- a particularly advantageous embodiment of the invention is provided in that the electrode arrangements are arranged in different positions spaced apart from one another in the direction of the axis of rotation of the quartz glass crucible. In this way, heating over a large area can take place, for example, over part or the entire height of the wall of the quartz glass crucible, in order to achieve uniform heating. In addition to an increase in quality, the required duration of the manufacturing process is also reduced, thereby reducing the manufacturing effort.
- the electrode arrangements can be moved independently of one another. In this way, an optimal adaptation to different shapes of the quartz glass crucible can take place by a correspondingly coordinated distance from the wall. Therefore, the quality that can be achieved with the device can be further improved, in particular also complex shapes of a quartz glass crucible with a diameter that deviates from a simple pot or cylinder shape, for example also with larger diameters, without constructive changes to the device.
- the electrode arrangements are arranged in an equally distributed manner with respect to the circumference of the quartz glass crucible.
- the cooling duration of a section of the wall between two successive heating zones of the different electrode arrangements, determined by the geometric dimensions including the resulting speed of rotation of the quartz glass crucible, is thereby constant, so that an undesirable temperature fluctuation can be prevented.
- the device thus equipped leads to a further increase in quality.
- At least one electrode arrangement is provided with a feed for SiO 2 grain, while at least one further electrode arrangement is provided exclusively for heating.
- the invention allows various embodiments. To further clarify its basic principle, one of these is shown in the drawing and is described below.
- a melting mold 1 with a quartz glass crucible 2 inserted therein and designed as a crucible. Above an opening 3 of the quartz glass crucible 2, a device 5 equipped with a cooling body 4 designed as a cooling plate is positioned, through which a first electrode arrangement 7 and a further one Electrode arrangement 8 projects into an interior space 6 of the quartz glass crucible 2.
- a section 14, 15 of the wall 13 is heated, the heating time of a respective section 14, 15 being determined by the rotational speed of the quartz glass crucible 2 rotating here about an axis of rotation 16.
- the speed in turn is largely determined, in particular, by the geometry of the quartz glass crucible 2, because the SiO 2 curvature which initially lies unattached against the melting mold 1 and forms the later quartz glass crucible 2 is held in a shape pre-shaped by a template solely by the centrifugal force during rotation.
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Abstract
Description
VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG ROTATIONSSYMMETRISCHER QUARZGLASTIEGEL METHOD AND DEVICE FOR PRODUCING ROTATIONALLY SYMMETRICAL QUARTZ GLASS JARS
Die Erfindung betrifft ein Verfahren zur Herstellung rotationssymmetrischer Quarzglastiegel, bei dem ein Lichtbogen mittels einer Elektrodenanordnung, bestehend aus einer oder mehreren Anoden und einer Kathode, erzeugt und so eine Wandung oder ein Abschnitt einer Wandung des hierbei rotierenden Quarzglastiegels erhitzt wird. Weiterhin betrifft die Erfindung eine Vorrichtung zur Durchführung des Verfahrens.The invention relates to a method for producing rotationally symmetrical quartz glass crucibles, in which an arc is generated by means of an electrode arrangement consisting of one or more anodes and a cathode, and thus a wall or a section of a wall of the quartz glass crucible rotating here is heated. Furthermore, the invention relates to a device for performing the method.
Ein Verfahren und eine Vorrichtung der genannten Art werden in der Praxis aufgrund ihrer hohen Wirtschaftlichkeit vielfach eingesetzt. Eine in Rotation versetzte Schmelzform wird hierzu teilweise mit einer SiO2-Kömung gefüllt, wobei dies eine natürliche oder synthetische SiO2- Körnung sein kann. Mit Hilfe einer Schablone wird während der Rotation aus der Körnung eine Vorform des späteren Quarzglastiegels erstellt. Danach wird mittels der Elektrodenanordnung ein Lichtbogen gezündet und in verschiedenen Ebenen an der rotierenden Wandung des Quarzglastiegels entlanggeführt, wobei die Quarzglaskörnung zu einer glasigen Wand in Form des Quarzglastiegels geschmolzen wird. Nach dem Abkühlen des Quarzglastiegels ist dessen endgültige Form bereits geschaffen, wobei die Innenseite der Wandung glasiert ist, während an der Außenseite der Wandung noch SiO2-Körnung anhaftet, die einem nachfolgenden Arbeitsschritt abgerieben oder abgeschliffen wird. Die Außenseite ist unglasiert.A method and a device of the type mentioned are widely used in practice due to their high cost-effectiveness. For this purpose, a melt mold set in rotation is partially filled with an SiO 2 grain, which can be a natural or synthetic SiO 2 grain. With the help of a template, a preform of the later quartz glass crucible is created from the grain during rotation. An arc is then ignited by means of the electrode arrangement and guided along the rotating wall of the quartz glass crucible in different planes, the quartz glass grain being melted into a glassy wall in the form of the quartz glass crucible. After the quartz glass crucible has cooled, its final shape has already been created, the inside of the wall being glazed, while SiO 2 grain still adheres to the outside of the wall, which is rubbed off or ground off in a subsequent working step. The outside is unglazed.
Ein solches Verfahren ist auch Gegenstand der DE 197 10 672 A1, bei dem zusätzlich durch Einstreuen von SiO2-Körnung mit weiteren Bestandteilen ein schichtartiger Aufbau mit speziellen Eigenschaften hergestellt wird. Von grundsätzlicher Bedeutung für das Verfahren ist die Einhaltung einer insbesondere durch die geometrischen Abmessungen des Quarzglastiegels bestimmten Drehzahl der Schmelzform, weil die hierbei auftretenden Fliehkräfte die SiO2-Körnung in der mittels Schablone vorgeformten Form halten. Dabei führt eine unzureichende Drehzahl mit entsprechend geringen Fliehkräften dazu, daß die lose SiO2-Körnung nicht in der gewünschten Position gehalten werden kann und teilweise in der Schmelzform zu Boden rutscht. Im Gegensatz hierzu führt eine zu hohe Drehzahl dazu, daß die Bodenschicht des Quarzglastiegels nach außen verlagert wird und dabei aufreißt. Die Drehzahl ist demnach nur sehr eingeschränkt variabel.Such a method is also the subject of DE 197 10 672 A1, in which a layer-like structure with special properties is additionally produced by sprinkling in SiO 2 granules with other constituents. It is of fundamental importance for the method to maintain a rotational speed of the melting mold, which is determined in particular by the geometric dimensions of the quartz glass crucible, because the centrifugal forces that occur keep the SiO 2 grain size in the shape preformed by means of a template. An inadequate speed with correspondingly low centrifugal forces means that the loose SiO 2 grain cannot be held in the desired position and partially slides to the bottom in the melt mold. In contrast, an excessively high speed leads to the bottom layer of the quartz glass crucible being displaced outwards and thereby tearing open. The speed is therefore only variable to a very limited extent.
Als nachteilig erweist sich dabei, daß eine ausreichend hohe und gleichmäßige Erhitzung der Wandung, insbesondere bei großen Quarzglastiegeln nur dadurch erreicht werden kann, daß die Elektrodenanordnung mit einer hohen Wärmeleistung betrieben wird. Dabei kann es jedoch beim Einstreuen von SiO2-Kömung zu Verdampfungserscheinungen und Blasenbildung kommen, wodurch die Qualität des Endproduktes erheblich verschlechtert wird. Außerdem wird die Aufbaurate für die Innenschicht reduziert (Folge größere Verdampfungen). Weiterhin bedingt die partielle Erhitzung eines Abschnittes der rotierenden Wandung eine Abkühlphase entsprechend der Dauer einer vollen Umdrehung bis der Abschnitt der Wandung erneut in die Erhitzungszone eintritt, deren Dauer insbesondere bei geringen Drehzahlen und großen Durchmessern des Quarzglastiegels zu starken Temperaturschwankungen und damit zu Qualitätseinbußen führt.It proves to be disadvantageous that a sufficiently high and uniform heating of the wall, in particular in the case of large quartz glass crucibles, can only be achieved by operating the electrode arrangement with a high thermal output. However, evaporation and blistering can occur when scattering SiO 2 grains, which considerably deteriorates the quality of the end product. In addition, the build-up rate for the inner layer is reduced (resulting in greater evaporation). Furthermore, the partial heating of a section of the rotating wall requires a cooling phase corresponding to the duration of a full revolution until the section of the wall re-enters the heating zone, the duration of which, in particular at low speeds and large diameters of the quartz glass crucible, leads to large temperature fluctuations and thus to quality losses.
Vor diesem Hintergrund liegt der Erfindung die Aufgabe zugrunde, ein Verfahren der Eingangs genannten Art derart weiterzubilden, daß unabhängig von der Drehzahl des rotierenden Quarzglastiegels die auftretende Temperaturdifferenz wesentlich vermindert werden kann, um so insbesondere unerwünschte Verdampfungen und Blasenbildungen durch starke Erhitzung bzw. Abkühlung weitgehend ausschließen zu können. Weiterhin soll eine Vorrichtung zur Durchführung des Verfahrens geschaffen werden.Against this background, the invention has for its object to develop a method of the type mentioned in such a way that the temperature difference occurring can be significantly reduced regardless of the speed of rotation of the rotating quartz glass crucible, in order to largely rule out undesirable evaporation and blistering due to excessive heating or cooling to be able to. Furthermore, a device for performing the method is to be created.
Die erstgenannte Aufgabe wird erfindungsgemäß dadurch gelöst, daß durch zumindest eine weitere Elektrodenanordnung bestehend aus einer oder mehreren Anoden und einer Kathode ein weiterer Lichtbogen gebildet wird, wodurch ein weiterer Abschnitt der Wandung des Quarzglastiegels erwärmt wird. Hierdurch kann jede einzelne Elektrodenanordnung mit einer verminderten Wärmeleistung betrieben werden. Daher können Verdampfungserscheinungen, insbesondere beim Einstreuen der SiO2-Körnung weitgehend ausgeschlossen werden. Zudem kann dadurch bei einer geometrisch vorbestimmten Drehzahl die Dauer der Abkühlungsphase, bis ein jeweiliger Abschnitt der Wandung erneut in eine nachfolgende Erhitzungszone der nächsten Elektrodenanordnung eintritt, deutlich verkürzt werden. Die auftretenden Temperaturdifferenzen werden somit erheblich verringert. Die Dicke einer durch das Einstreuen der SiO2-Körnung erzeugten Innenschicht kann dabei zugleich erhöht werden, wobei zudem der bei höherer Wärmeleistung nach dem Stand der Technik verdampfende Anteil der SiO2-Körnung zum Aufbau der Innenschicht mit einem größeren Anteil zur Verfügung steht. Dabei entfällt auch der zusätzliche Aufwand zum Absaugen der verdampfenden Bestandteile der SiO2-Kömung, so daß eine weitgehende Automatisierung des Herstellungsverfahrens realisiert werden kann. Außerdem wird dabei auch die Dauer des Herstellungsverfahrens verkürzt, wodurch eine bessere Auslastung der Anlage und damit auch eine Steigerung der Wirtschaftlichkeit verbunden ist.The first-mentioned object is achieved in that a further arc is formed by at least one further electrode arrangement consisting of one or more anodes and a cathode, whereby a further section of the wall of the quartz glass crucible is heated. As a result, each individual electrode arrangement can be operated with a reduced thermal output. Evaporation, especially when sprinkling in the SiO 2 grain size, can therefore be largely ruled out. In addition, at a geometrically predetermined speed of rotation, the duration of the cooling phase can be reached until a respective section of the wall again in a subsequent heating zone of the next Electrode arrangement occurs, can be significantly shortened. The temperature differences that occur are thus considerably reduced. The thickness of an inner layer produced by sprinkling in the SiO 2 grain can be increased at the same time, the portion of the SiO 2 grain evaporating at higher thermal output according to the prior art also being available to build up the inner layer to a greater extent. The additional effort for suctioning off the evaporating constituents of the SiO 2 grain is also eliminated, so that extensive automation of the manufacturing process can be realized. It also shortens the duration of the manufacturing process, which means better utilization of the plant and thus an increase in cost-effectiveness.
Hierbei wird eine besonders vorteilhafte Weiterbildung des Verfahrens dadurch erreicht, daß durch die Elektrodenanordnung verschiedene in Richtung der Rotationsachse des Quarzglastiegels voneinander entfernte Abschnitte erhitzt werden. Durch die hierzu in einer unterschiedlichen vertikalen Position vorgesehenen Elektrodenanordnungen kann ein großflächiger Wärmeeintrag und damit eine Verkürzung der Verfahrensdauer erreicht werden. Zugleich wird dabei eine gleichmäßigere Erwärmung des Quarzglastiegels mit einer entsprechend verbesserten Qualität erreicht.In this case, a particularly advantageous development of the method is achieved in that the electrode arrangement heats different sections that are spaced apart in the direction of the axis of rotation of the quartz glass crucible. Due to the electrode arrangements provided for this purpose in a different vertical position, a large-scale heat input and thus a shortening of the process duration can be achieved. At the same time, a more uniform heating of the quartz glass crucible is achieved with a correspondingly improved quality.
Die zweite genannte Aufgabe, eine Vorrichtung zur Herstellung eines rotationssymmetrischen Quarzglastiegels durch abschnittsweise Erwärmung mittels einer zur Erzeugung eines Lichtbogens vorgesehenen Elektrodenanordnung, bestehend aus einer oder mehreren Anoden und einer Kathode, zu schaffen, wobei der Quarzglastiegel um seine Rotationsachse drehbar ist, wird erfindungsgemäß dadurch gelöst, daß die Vorrichtung zusätzlich zu der ersten Elektrodenanordnung mit zumindest einerweiteren Elektrodenanordnung, bestehend aus einer oder mehrerer Anoden und einer Kathode, ausgestattet ist, welche einem der ersten Elektrodenanordnung abgewandten Abschnitt des Quarzglastiegels zugeneigt ist. Hierdurch kann die Temperatur des Quarzglastiegels unabhängig von der Drehzahl auf einem vergleichsweise hohen Niveau gehalten werden, so daß die auftretenden Temperaturdifferenzen wesentlich geringer ausfallen. Dabei erreicht ein durch den Lichtbogen der ersten Elektrodenanordnung erhitzter Abschnitt der Oberfläche, insbesondere der Wandung oder der Bodenfläche, bereits nach einer geringen Drehwinkeländerung die Erhitzungszone des Lichtbogens der zweiten Elektrodenanordnung, wobei die einzelnen Elektrodenanordnungen mit einer verminderten Wärmeleistung betrieben werden können. Durch die damit verbundenen verminderten Verdampfungserscheinungen können einerseits zusätzliche Maßnahmen zum Absaugen der verdampften Bestandteile entfallen, andererseits erhöht sich der nutzbare Anteil der eingestreuten SiO2-Kömung, so daß ein schneller Aufbau einer Innenschicht mit einer erheblich größeren Schichtdicke erreicht wird. Zudem entsteht eine im wesentlichen blasenfreie Innenschicht, wodurch höhere Qualitätsanforderungen problemlos realisierbar sind. Der Ausschußanteil des so geschaffenen Quarzglastiegels und die Dauer des Herstellungsverfahrens wird zugleich vermindert, so daß eine verbesserte Wirtschaftlichkeit des Herstellungsverfahrens gegeben ist. Weiterhin können dadurch auch wesentlich größere Tiegeldurchmesser hergestellt werden als dies nach dem Stand der Technik bisher möglich war.The second object mentioned, to create a device for producing a rotationally symmetrical quartz glass crucible by heating in sections by means of an electrode arrangement provided for generating an arc, consisting of one or more anodes and a cathode, the quartz glass crucible being rotatable about its axis of rotation, is achieved according to the invention that the device, in addition to the first electrode arrangement, is equipped with at least one further electrode arrangement consisting of one or more anodes and a cathode, which is inclined towards a section of the quartz glass crucible facing away from the first electrode arrangement. As a result, the temperature of the quartz glass crucible can be kept at a comparatively high level irrespective of the rotational speed, so that the temperature differences that occur are significantly lower. A section of the surface, in particular the wall or the bottom surface, heated by the arc of the first electrode arrangement already reaches the heating zone of the arc of the second electrode arrangement after a slight change in the angle of rotation, it being possible for the individual electrode arrangements to be operated with a reduced thermal output. As a result of the reduced evaporation phenomena associated therewith, additional measures for suctioning off the evaporated constituents can be omitted, on the other hand the usable portion of the scattered SiO 2 grain increases, so that a faster build-up of an inner layer with a considerably greater layer thickness is achieved becomes. In addition, an essentially bubble-free inner layer is created, which means that higher quality requirements can be easily achieved. The reject percentage of the quartz glass crucible created in this way and the duration of the production process are simultaneously reduced, so that there is an improved economy of the production process. Furthermore, crucible diameters can be made much larger than was previously possible according to the prior art.
Eine besonders vorteilhafte Ausführungsform der Erfindung ist dadurch gegeben, daß die Elektrodenanordnungen in verschiedenen, in Richtung der Rotationsachse des Quarzglastiegels voneinander beabstandeten Positionen angeordnet sind. Hierdurch kann eine großflächige Erwärmung beispielsweise über einenTeil oder die Gesamthöhe der Wandung des Quarzglastiegels erfolgen, um so eine gleichmäßige Erwärmung zu erreichen. Neben einer Qualitätssteigerung wird dabei auch die erforderliche Dauer des Herstellungsverfahrens, und dadurch der Her- stellungsaufwand vermindert.A particularly advantageous embodiment of the invention is provided in that the electrode arrangements are arranged in different positions spaced apart from one another in the direction of the axis of rotation of the quartz glass crucible. In this way, heating over a large area can take place, for example, over part or the entire height of the wall of the quartz glass crucible, in order to achieve uniform heating. In addition to an increase in quality, the required duration of the manufacturing process is also reduced, thereby reducing the manufacturing effort.
Dabei ist es auch besonders günstig, wenn die Elektrodenanordnungen voneinander unabhängig verfahrbar sind. Hierdurch kann eine optimale Anpassung an unterschiedliche Formen des Quarzglastiegels durch einen entsprechend abgestimmten Abstand zu der Wandung erfolgen. Daher kann die mit der Vorrichtung erreichbare Qualität weiter verbessert werden, wobei insbesondere auch aufwendige, von einer einfachen Topf- oder Zylinderform abweichende Formen eines Quarzglastiegels mit beispielsweise auch größeren Durchmessern ohne konstruktive Änderungen an der Vorrichtung herstellbar sind.It is also particularly advantageous if the electrode arrangements can be moved independently of one another. In this way, an optimal adaptation to different shapes of the quartz glass crucible can take place by a correspondingly coordinated distance from the wall. Therefore, the quality that can be achieved with the device can be further improved, in particular also complex shapes of a quartz glass crucible with a diameter that deviates from a simple pot or cylinder shape, for example also with larger diameters, without constructive changes to the device.
Hierzu ist eine Weiterbildung der Erfindung besonders gut geeignet, bei der die Elektrodenanordnungen bezüglich des Umfanges des Quarzglastiegels gleich verteilt angeordnet sind. Die durch die geometrischen Abmessungen einschließlich der daraus resultierenden Drehzahl des Quarzglastiegels bestimmte Abkühlungsdauer eines Abschnittes der Wandung zwischen zwei aufeinander folgenden Erhitzungszonen der verschiedenen Elektrodenanordnungen ist dadurch konstant, so daß eine unerwünschte Temperaturschwankung verhindert werden kann. Die so ausgestattete Vorrichtung führt dadurch zu einer weiteren Steigerung der Qualität.For this purpose, a further development of the invention is particularly well suited, in which the electrode arrangements are arranged in an equally distributed manner with respect to the circumference of the quartz glass crucible. The cooling duration of a section of the wall between two successive heating zones of the different electrode arrangements, determined by the geometric dimensions including the resulting speed of rotation of the quartz glass crucible, is thereby constant, so that an undesirable temperature fluctuation can be prevented. The device thus equipped leads to a further increase in quality.
Dabei ist eine andere vorteilhafte Abwandlung der Erfindung dadurch gegeben, daß zumindest eine Elektrodenanordnung mit einer Zuführung für SiO2-Körnung versehen ist, während zumindest eine weitere Elektrodenanordnung ausschließlich zur Erhitzung vorgesehen ist. Hierdurch wird eine Vereinfachung der Vorrichtung und deren Steuerung erreicht, wobei eine Elektrodenanordnung ausschließlich zur Erhitzung eines Abschnittes der Wandung verwendet wird, wäh- rend in den Lichtbogen einer weiteren Elektrodenanordnung zusätzlich SiO2-Körnung eingestreut wird und so eine Innenschicht des Quarzglastiegels aufgebaut wird.Another advantageous modification of the invention is given in that at least one electrode arrangement is provided with a feed for SiO 2 grain, while at least one further electrode arrangement is provided exclusively for heating. This results in a simplification of the device and its control, an electrode arrangement being used exclusively for heating a section of the wall, while SiO 2 grain is additionally sprinkled into the arc of a further electrode arrangement and an inner layer of the quartz glass crucible is thus built up.
Die Erfindung läßt verschiedene Ausführungsformen zu. Zur weiteren Verdeutlichung ihres Grundprinzips ist eine davon in der Zeichnung dargestellt und wird nachfolgend beschrieben. Diese zeigt in einer seitlichen Schnittdarstellung eine Schmelzform 1 mit einem darin eingesetzten und als Tiegel ausgeführten Quarzglastiegel 2. Oberhalb einer Öffnung 3 des Quarzglastiegels 2 ist eine mit einem als Kühlplatte ausgeführten Kühlkörper 4 ausgestattete Vorrichtung 5 positioniert, durch die eine erste Elektrodenanordnung 7 und eine weitere Elektrodenanordnung 8 in einen Innenraum 6 des Quarzglastiegels 2 hineinragt. Diese jeweils mit einer oder mehreren Anoden 9 und einer Kathode 10 ausgestatteten Elektrodenanordnung 7, 8 bilden nach dem Zünden eines Lichtbogens jeweils eine Erhitzungszone 11, 12 im Bereich einer Wandung 13 des Quarzglastiegels 2. In diesen Erhitzungszonen 11, 12 wird jeweils ein Abschnitt 14, 15 der Wandung 13 erhitzt, wobei die Erhitzungsdauer eines jeweiligen Abschnittes 14, 15 durch die Drehzahl des hierbei um eine Rotationsachse 16 rotierenden Quarzglastiegels 2 bestimmt ist. Die Drehzahl ist ihrerseits insbesondere durch die Geometrie des Quarzglastiegels 2 weitgehend festgelegt, weil das zunächst ungebunden gegen die Schmelzform 1 anliegende und den späteren Quarzglastiegel 2 bildende SiO2-Kömung ausschließlich durch die Fliehkraft bei der Rotation in einer durch eine Schablone vorgeformten Form gehalten wird. Dabei führt eine zu hohe Drehzahl des Quarzglastiegels 2 insbesondere im Bereich eines Bodens 17 des Quarzglastiegels 2 zu einer unerwünschten nach außen gerichteten Verlagerung der SiO2- Körnung, während demgegenüber eine zu geringe Drehzahl zu einem Abgleiten der Körnung in der Schmelzform 1 nach unten führt. Durch die Verwendung von zwei Elektrodenanordnungen 7, 8 wird daher die Dauer der Abkühlphase eines Abschnittes 14, 15 zwischen den jeweils aufeinander folgenden Erhitzungszonen 11, 12 verkürzt und daher die Temperaturdifferenz der Wandung 13 verringert. Zugleich kann dabei die Wärmeleistung jeder einzelnen Elektrodenanordnung 7, 8 verringert werden, so daß auftretende Verdampfungen von Bestandteilen der eingestreuten SiO2-Körnung in lediglich geringem Umfang auftreten und so ein weitgehend blasenfreies Endprodukt entsteht. BezugszeichenlisteThe invention allows various embodiments. To further clarify its basic principle, one of these is shown in the drawing and is described below. In a side sectional view, this shows a melting mold 1 with a quartz glass crucible 2 inserted therein and designed as a crucible. Above an opening 3 of the quartz glass crucible 2, a device 5 equipped with a cooling body 4 designed as a cooling plate is positioned, through which a first electrode arrangement 7 and a further one Electrode arrangement 8 projects into an interior space 6 of the quartz glass crucible 2. These electrode assemblies 7, 8, each equipped with one or more anodes 9 and a cathode 10, each form a heating zone 11, 12 in the region of a wall 13 of the quartz glass crucible 2 after the ignition of an arc. In each of these heating zones 11, 12, a section 14, 15 of the wall 13 is heated, the heating time of a respective section 14, 15 being determined by the rotational speed of the quartz glass crucible 2 rotating here about an axis of rotation 16. The speed in turn is largely determined, in particular, by the geometry of the quartz glass crucible 2, because the SiO 2 curvature which initially lies unattached against the melting mold 1 and forms the later quartz glass crucible 2 is held in a shape pre-shaped by a template solely by the centrifugal force during rotation. An excessively high speed of rotation of the quartz glass crucible 2, particularly in the region of a bottom 17 of the quartz glass crucible 2, leads to an undesired outward displacement of the SiO 2 grain, whereas, on the other hand, a speed that is too low leads to the grain in the melting mold 1 sliding downward. The use of two electrode arrangements 7, 8 therefore shortens the duration of the cooling phase of a section 14, 15 between the successive heating zones 11, 12 and therefore reduces the temperature difference of the wall 13. At the same time, the heat output of each individual electrode arrangement 7, 8 can be reduced, so that evaporation of constituents of the scattered SiO 2 grain occurs only to a small extent and a largely bubble-free end product is thus produced. LIST OF REFERENCE NUMBERS
1 Schmelzform1 melting mold
2 Quarzglastiegel2 quartz glass crucibles
3 Öffnung3 opening
4 Kühlkörper4 heat sinks
5 Vorrichtung5 device
6 Innenraum6 interior
7 Elektrodenanorc7 electrode anorc
8 Elektrodenanorc8 electrode anorc
9 Anode9 anode
10 Kathode10 cathode
11 Erhitzungszone11 heating zone
12 Erhitzungszone12 heating zone
13 Wandung13 wall
14 Abschnitt14 section
15 Abschnitt15 section
16 Rotationsachse16 axis of rotation
17 Boden 17 floor
Claims
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020027003138A KR20020029786A (en) | 2000-07-11 | 2001-07-09 | Method and device for producing rotationally symmetrical quartz glass crucibles |
| JP2002509039A JP4758597B2 (en) | 2000-07-11 | 2001-07-09 | Method for producing rotationally symmetric quartz glass crucible and apparatus for carrying out the method |
| US10/070,847 US7350378B2 (en) | 2000-07-11 | 2001-07-09 | Method for producing rotationally symmetrical quartz glass crucibles |
| EP01965091A EP1299316B1 (en) | 2000-07-11 | 2001-07-09 | Method and device for producing rotationally symmetrical quartz glass crucibles |
| DE50100807T DE50100807D1 (en) | 2000-07-11 | 2001-07-09 | METHOD AND DEVICE FOR THE PRODUCTION OF ROTATIONALLY SYMMETRIC QUARTZ GLASS JARS |
| NO20020936A NO20020936L (en) | 2000-07-11 | 2002-02-26 | Process for producing rotationally symmetrical quartz crucible and apparatus for carrying out the method |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10033632A DE10033632C1 (en) | 2000-07-11 | 2000-07-11 | Device for producing rotationally symmetrical quartz glass crucibles |
| DE10033632.9 | 2000-07-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2002004368A1 true WO2002004368A1 (en) | 2002-01-17 |
Family
ID=7648526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2001/007858 Ceased WO2002004368A1 (en) | 2000-07-11 | 2001-07-09 | Method and device for producing rotationally symmetrical quartz glass crucibles |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7350378B2 (en) |
| EP (1) | EP1299316B1 (en) |
| JP (1) | JP4758597B2 (en) |
| KR (1) | KR20020029786A (en) |
| CN (1) | CN1204069C (en) |
| DE (2) | DE10033632C1 (en) |
| NO (1) | NO20020936L (en) |
| WO (1) | WO2002004368A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1344751A3 (en) * | 2002-03-14 | 2004-08-11 | Japan Super Quartz Corporation | Quartz glass crucible and process and apparatus for producing it by arc fusion |
| US8196430B2 (en) | 2007-11-30 | 2012-06-12 | Japan Super Quartz Corporation | Method and apparatus for manufacturing vitreous silica crucible |
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| JP5562518B2 (en) * | 2007-12-28 | 2014-07-30 | 株式会社Ｓｕｍｃｏ | Electrode structure of quartz glass crucible manufacturing equipment |
| JP4879220B2 (en) * | 2008-05-28 | 2012-02-22 | ジャパンスーパークォーツ株式会社 | Quartz glass crucible and manufacturing method thereof |
| KR101156965B1 (en) * | 2008-07-03 | 2012-06-20 | 쟈판 스파 쿼츠 가부시키가이샤 | Method for producing vitreous silica crucible, vitreous silica crucible produced thereby and producing apparatus thereof |
| ATE526293T1 (en) * | 2008-07-04 | 2011-10-15 | Japan Super Quartz Corp | METHOD FOR PRODUCING A QUARTZ GLASS CRUCIAL |
| CN101618941B (en) * | 2008-07-04 | 2012-04-11 | 日本超精石英株式会社 | Production method of quartz glass pot, quartz glass pot and production device of the same |
| US20100000465A1 (en) * | 2008-07-07 | 2010-01-07 | Japan Super Quartz Corporation | Method for producing vitreous silica crucible |
| JP5142912B2 (en) * | 2008-09-22 | 2013-02-13 | ジャパンスーパークォーツ株式会社 | Arc discharge method, arc discharge device, quartz glass crucible manufacturing device |
| JP5415297B2 (en) * | 2009-01-08 | 2014-02-12 | 株式会社Ｓｕｍｃｏ | Quartz glass crucible manufacturing equipment |
| KR101331181B1 (en) * | 2009-08-12 | 2013-11-20 | 쟈판 스파 쿼츠 가부시키가이샤 | Production device for silica glass crucible and production method for silica glass crucible |
| JP5453679B2 (en) * | 2009-10-02 | 2014-03-26 | 株式会社Ｓｕｍｃｏ | Silica glass crucible manufacturing apparatus and silica glass crucible manufacturing method |
| JP5397857B2 (en) * | 2009-10-20 | 2014-01-22 | 株式会社Ｓｕｍｃｏ | Method and apparatus for producing quartz glass crucible |
| JP5605903B2 (en) * | 2010-12-02 | 2014-10-15 | 株式会社Ｓｕｍｃｏ | Silica glass crucible manufacturing equipment |
| US9193620B2 (en) | 2011-03-31 | 2015-11-24 | Raytheon Company | Fused silica body with vitreous silica inner layer, and method for making same |
| US9221709B2 (en) * | 2011-03-31 | 2015-12-29 | Raytheon Company | Apparatus for producing a vitreous inner layer on a fused silica body, and method of operating same |
| US8281620B1 (en) * | 2011-04-27 | 2012-10-09 | Japan Super Quartz Corporation | Apparatus for manufacturing vitreous silica crucible |
| US20120272687A1 (en) * | 2011-04-27 | 2012-11-01 | Japan Super Quartz Corporation | Apparatus for manufacturing vitreous silica crucible |
| CN102219360B (en) * | 2011-05-08 | 2013-01-09 | 江苏润弛太阳能材料科技有限公司 | Method for manufacturing polycrystalline silicon ingot casting fused quartz crucible without spraying |
| SG10201709699RA (en) * | 2013-05-23 | 2017-12-28 | Applied Materials Inc | A coated liner assembly for a semiconductor processing chamber |
| JP7157932B2 (en) * | 2019-01-11 | 2022-10-21 | 株式会社Sumco | Silica glass crucible manufacturing apparatus and manufacturing method |
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| EP0911429A1 (en) * | 1997-09-30 | 1999-04-28 | Heraeus Quarzglas GmbH | Quartz glass crucible for producing silicon single crystal and method for producing the crucible |
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-
2000
- 2000-07-11 DE DE10033632A patent/DE10033632C1/en not_active Expired - Fee Related
-
2001
- 2001-07-09 DE DE50100807T patent/DE50100807D1/en not_active Expired - Lifetime
- 2001-07-09 KR KR1020027003138A patent/KR20020029786A/en not_active Withdrawn
- 2001-07-09 CN CNB018019757A patent/CN1204069C/en not_active Expired - Fee Related
- 2001-07-09 US US10/070,847 patent/US7350378B2/en not_active Expired - Fee Related
- 2001-07-09 WO PCT/EP2001/007858 patent/WO2002004368A1/en not_active Ceased
- 2001-07-09 JP JP2002509039A patent/JP4758597B2/en not_active Expired - Fee Related
- 2001-07-09 EP EP01965091A patent/EP1299316B1/en not_active Expired - Lifetime
-
2002
- 2002-02-26 NO NO20020936A patent/NO20020936L/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2746092A1 (en) * | 1996-03-18 | 1997-09-19 | Heraeus Quarzglas | PROCESS FOR PRODUCING A QUARTZ GLASS CRUCIBLE FOR PULLING A SILICON SINGLE CRYSTAL AND A CRUCIBLE THUS OBTAINED |
| EP0911429A1 (en) * | 1997-09-30 | 1999-04-28 | Heraeus Quarzglas GmbH | Quartz glass crucible for producing silicon single crystal and method for producing the crucible |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1344751A3 (en) * | 2002-03-14 | 2004-08-11 | Japan Super Quartz Corporation | Quartz glass crucible and process and apparatus for producing it by arc fusion |
| US8196430B2 (en) | 2007-11-30 | 2012-06-12 | Japan Super Quartz Corporation | Method and apparatus for manufacturing vitreous silica crucible |
Also Published As
| Publication number | Publication date |
|---|---|
| DE50100807D1 (en) | 2003-11-20 |
| CN1204069C (en) | 2005-06-01 |
| KR20020029786A (en) | 2002-04-19 |
| NO20020936D0 (en) | 2002-02-26 |
| JP2004502630A (en) | 2004-01-29 |
| DE10033632C1 (en) | 2002-01-03 |
| US20020170316A1 (en) | 2002-11-21 |
| US7350378B2 (en) | 2008-04-01 |
| CN1386111A (en) | 2002-12-18 |
| EP1299316A1 (en) | 2003-04-09 |
| EP1299316B1 (en) | 2003-10-15 |
| NO20020936L (en) | 2002-02-26 |
| JP4758597B2 (en) | 2011-08-31 |
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