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WO2002001611A3 - Electrostatic chuck and method of fabricating the same - Google Patents

Electrostatic chuck and method of fabricating the same Download PDF

Info

Publication number
WO2002001611A3
WO2002001611A3 PCT/US2001/019292 US0119292W WO0201611A3 WO 2002001611 A3 WO2002001611 A3 WO 2002001611A3 US 0119292 W US0119292 W US 0119292W WO 0201611 A3 WO0201611 A3 WO 0201611A3
Authority
WO
WIPO (PCT)
Prior art keywords
protective coating
support surface
chuck
fabricating
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/019292
Other languages
French (fr)
Other versions
WO2002001611A2 (en
Inventor
Karl Brown
Steven Sansoni
Steven C Crocker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2002001611A2 publication Critical patent/WO2002001611A2/en
Publication of WO2002001611A3 publication Critical patent/WO2002001611A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Apparatus for protecting a substrate and a support surface of a substrate support chuck comprising a protective coating (100) of a diamond-like carbon-based material deposited upon the support surface. The protective coating may also contain silicon-based materials. The protective coating is deposited via plasma-enhanced CVD and is approximately in the range of 1 - 5νm thick. The apparatus may also have a wafer spacing mask (110) disposed upon the protective coating. A method of fabricating a substrate support chuck is also disclosed and comprises the steps of forming a chuck body having a support surface and depositing a carbon-based material over the support surface of said chuck body to form a protective coating (100). Optionally, a step of depositing a wafer spacing mask (110) upon the protective coating may be added. The protective coating results in a substantial decrease in contamination of chucks, wafers and the process chamber environment.
PCT/US2001/019292 2000-06-23 2001-06-15 Electrostatic chuck and method of fabricating the same Ceased WO2002001611A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60200200A 2000-06-23 2000-06-23
US09/602,002 2000-06-23

Publications (2)

Publication Number Publication Date
WO2002001611A2 WO2002001611A2 (en) 2002-01-03
WO2002001611A3 true WO2002001611A3 (en) 2002-05-23

Family

ID=24409573

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/019292 Ceased WO2002001611A2 (en) 2000-06-23 2001-06-15 Electrostatic chuck and method of fabricating the same

Country Status (2)

Country Link
TW (1) TW517265B (en)
WO (1) WO2002001611A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2836595B1 (en) * 2002-02-27 2005-04-08 Semco Engineering Sa SYSTEM FOR HOMOGENEOUS DISTRIBUTION OF THE TEMPERATURE AT THE SURFACE OF AN SOLE ON WHICH IS AVAILABLE A MEMBER
WO2004027839A2 (en) * 2002-09-19 2004-04-01 Applied Materials, Inc. Electrostatic chuck having a low level of particle generation and method of fabricating same
US7824498B2 (en) 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
JP2006179693A (en) * 2004-12-22 2006-07-06 Shin Etsu Chem Co Ltd Electrostatic chuck with heater
EP2024994B1 (en) * 2006-06-02 2014-04-23 Sulzer Metaplas GmbH Method to prevent metal contamination by a substrate holder
US10325800B2 (en) * 2014-08-26 2019-06-18 Applied Materials, Inc. High temperature electrostatic chucking with dielectric constant engineered in-situ charge trap materials

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0692814A1 (en) * 1994-07-15 1996-01-17 Applied Materials, Inc. Multi-electrode electrostatic chuck
EP0806798A2 (en) * 1996-05-08 1997-11-12 Applied Materials, Inc. Substrate support chuck having a contaminant containment layer and method of fabricating same
EP0806797A2 (en) * 1996-05-08 1997-11-12 Applied Materials, Inc. Monopolar electrostatic chuck having an electrode in contact with a workpiece
US5777543A (en) * 1994-01-09 1998-07-07 Kyocera Corporation Ceramic resistor and electrostatic chuck having an aluminum nitride crystal phase
EP1001455A1 (en) * 1998-11-12 2000-05-17 Applied Materials, Inc. Apparatus for protecting a substrate support surface and method of fabricating same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5777543A (en) * 1994-01-09 1998-07-07 Kyocera Corporation Ceramic resistor and electrostatic chuck having an aluminum nitride crystal phase
EP0692814A1 (en) * 1994-07-15 1996-01-17 Applied Materials, Inc. Multi-electrode electrostatic chuck
EP0806798A2 (en) * 1996-05-08 1997-11-12 Applied Materials, Inc. Substrate support chuck having a contaminant containment layer and method of fabricating same
EP0806797A2 (en) * 1996-05-08 1997-11-12 Applied Materials, Inc. Monopolar electrostatic chuck having an electrode in contact with a workpiece
EP1001455A1 (en) * 1998-11-12 2000-05-17 Applied Materials, Inc. Apparatus for protecting a substrate support surface and method of fabricating same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LEE K-R ET AL: "Structural dependence of mechanical properties of Si incorporated diamond-like carbon films deposited by RF plasma-assisted chemical vapour deposition", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 308-309, no. 1-4, 31 October 1997 (1997-10-31), pages 263 - 267, XP004110283, ISSN: 0040-6090 *
SEEKAMP ET AL: "a-SiC(O,N):H thin films-their optical properties and possible applications", SEMICONDUCTOR CONFERENCE, 1998. CAS '98 PROCEEDINGS. 1998 INTERNATIONAL SINAIA, ROMANIA 6-10 OCT. 1998, NEW YORK, NY, USA,IEEE, US, 6 October 1998 (1998-10-06), pages 427 - 436, XP010313871, ISBN: 0-7803-4432-4 *

Also Published As

Publication number Publication date
WO2002001611A2 (en) 2002-01-03
TW517265B (en) 2003-01-11

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