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WO2002099164A3 - Solution de depot autocatalytique et dispositif a semi-conducteurs - Google Patents

Solution de depot autocatalytique et dispositif a semi-conducteurs Download PDF

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Publication number
WO2002099164A3
WO2002099164A3 PCT/JP2002/005250 JP0205250W WO02099164A3 WO 2002099164 A3 WO2002099164 A3 WO 2002099164A3 JP 0205250 W JP0205250 W JP 0205250W WO 02099164 A3 WO02099164 A3 WO 02099164A3
Authority
WO
WIPO (PCT)
Prior art keywords
electroless
semiconductor device
plating solution
interconnects
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/005250
Other languages
English (en)
Other versions
WO2002099164A2 (fr
Inventor
Hiroaki Inoue
Kenji Nakamura
Moriji Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to KR1020037015760A priority Critical patent/KR100891344B1/ko
Publication of WO2002099164A2 publication Critical patent/WO2002099164A2/fr
Anticipated expiration legal-status Critical
Publication of WO2002099164A3 publication Critical patent/WO2002099164A3/fr
Ceased legal-status Critical Current

Links

Classifications

    • H10D64/011
    • H10W20/037
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1603Process or apparatus coating on selected surface areas
    • C23C18/1607Process or apparatus coating on selected surface areas by direct patterning
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1635Composition of the substrate
    • C23C18/1637Composition of the substrate metallic substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1653Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/52Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
    • H10P14/46

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

La présente invention concerne une solution de dépôt autocatalytique utile pour former un film protecteur destiné à protéger sélectivement la surface des interconnexions exposées d'un dispositif à semi-conducteurs. Le dispositif à semi-conducteurs présente une structure d'interconnexion intégrée telle qu'un conducteur électrique, comme le cuivre ou l'argent, est encastré dans des niches fines pour des interconnexions formées à la surface d'un substrat à semi-conducteurs. L'invention concerne également un dispositif à semi-conducteurs dans lequel la surface des interconnexions exposées est protégée sélectivement par un film protecteur. La solution de dépôt autocatalytique contient des ions de cobalt, un agent complexant et un agent réducteur exempt de métal alcalin.
PCT/JP2002/005250 2001-06-01 2002-05-30 Solution de depot autocatalytique et dispositif a semi-conducteurs Ceased WO2002099164A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020037015760A KR100891344B1 (ko) 2001-06-01 2002-05-30 무전해 도금액 및 반도체 디바이스

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001167355 2001-06-01
JP2001-167355 2001-06-01
JP2001179341A JP2003049280A (ja) 2001-06-01 2001-06-13 無電解めっき液及び半導体装置
JP2001-179341 2001-06-13

Publications (2)

Publication Number Publication Date
WO2002099164A2 WO2002099164A2 (fr) 2002-12-12
WO2002099164A3 true WO2002099164A3 (fr) 2004-05-21

Family

ID=26616238

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/005250 Ceased WO2002099164A2 (fr) 2001-06-01 2002-05-30 Solution de depot autocatalytique et dispositif a semi-conducteurs

Country Status (5)

Country Link
JP (1) JP2003049280A (fr)
KR (1) KR100891344B1 (fr)
CN (1) CN1285764C (fr)
TW (1) TW543091B (fr)
WO (1) WO2002099164A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004304021A (ja) * 2003-03-31 2004-10-28 Ebara Corp 半導体装置の製造方法及び製造装置
JP4663965B2 (ja) * 2003-02-27 2011-04-06 株式会社荏原製作所 基板処理方法及び基板処理装置
JP2005015885A (ja) * 2003-06-27 2005-01-20 Ebara Corp 基板処理方法及び装置
KR100859259B1 (ko) * 2005-12-29 2008-09-18 주식회사 엘지화학 캡층 형성을 위한 코발트 계열 합금 무전해 도금 용액 및이를 이용하는 무전해 도금 방법
JP2007246981A (ja) * 2006-03-15 2007-09-27 Jsr Corp 無電解めっき液
JP2007246980A (ja) * 2006-03-15 2007-09-27 Jsr Corp 無電解めっき液
JP2007246979A (ja) * 2006-03-15 2007-09-27 Jsr Corp 無電解めっき液
JP2007246978A (ja) * 2006-03-15 2007-09-27 Jsr Corp 無電解めっき液
KR100774651B1 (ko) 2006-07-21 2007-11-08 동부일렉트로닉스 주식회사 반도체 소자의 구리배선 형성방법 및 구조
TW200825207A (en) * 2006-09-29 2008-06-16 Wako Pure Chem Ind Ltd Composition for nonelectrolytic plating and method of forming metallic protection film using the same
US7794530B2 (en) * 2006-12-22 2010-09-14 Lam Research Corporation Electroless deposition of cobalt alloys
US9496145B2 (en) 2014-03-19 2016-11-15 Applied Materials, Inc. Electrochemical plating methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3917464A (en) * 1973-07-20 1975-11-04 Us Army Electroless deposition of cobalt boron
EP0525282A2 (fr) * 1991-06-24 1993-02-03 Shipley Company Inc. Dépôt chimique contrôlé
US5240497A (en) * 1991-10-08 1993-08-31 Cornell Research Foundation, Inc. Alkaline free electroless deposition
US5695810A (en) * 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4232060A (en) * 1979-01-22 1980-11-04 Richardson Chemical Company Method of preparing substrate surface for electroless plating and products produced thereby
WO1990009468A1 (fr) * 1989-02-17 1990-08-23 Polymetals Technology Limited Composition et procede de revetement
JPH051384A (ja) * 1991-06-21 1993-01-08 Nec Corp 無電解めつき浴
JP3514800B2 (ja) * 1994-01-27 2004-03-31 哲彌 逢坂 軟磁性薄膜およびその製造方法
KR19990015599A (ko) * 1997-08-07 1999-03-05 윤종용 무전해 도금을 이용한 반도체장치의 듀얼 다마슨금속 배선층 형성방법
US6342733B1 (en) * 1999-07-27 2002-01-29 International Business Machines Corporation Reduced electromigration and stressed induced migration of Cu wires by surface coating

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3917464A (en) * 1973-07-20 1975-11-04 Us Army Electroless deposition of cobalt boron
EP0525282A2 (fr) * 1991-06-24 1993-02-03 Shipley Company Inc. Dépôt chimique contrôlé
US5240497A (en) * 1991-10-08 1993-08-31 Cornell Research Foundation, Inc. Alkaline free electroless deposition
US5695810A (en) * 1996-11-20 1997-12-09 Cornell Research Foundation, Inc. Use of cobalt tungsten phosphide as a barrier material for copper metallization

Also Published As

Publication number Publication date
TW543091B (en) 2003-07-21
JP2003049280A (ja) 2003-02-21
WO2002099164A2 (fr) 2002-12-12
KR100891344B1 (ko) 2009-03-31
CN1285764C (zh) 2006-11-22
CN1527888A (zh) 2004-09-08
KR20040008205A (ko) 2004-01-28

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