WO2002099164A3 - Solution de depot autocatalytique et dispositif a semi-conducteurs - Google Patents
Solution de depot autocatalytique et dispositif a semi-conducteurs Download PDFInfo
- Publication number
- WO2002099164A3 WO2002099164A3 PCT/JP2002/005250 JP0205250W WO02099164A3 WO 2002099164 A3 WO2002099164 A3 WO 2002099164A3 JP 0205250 W JP0205250 W JP 0205250W WO 02099164 A3 WO02099164 A3 WO 02099164A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electroless
- semiconductor device
- plating solution
- interconnects
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H10D64/011—
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- H10W20/037—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1637—Composition of the substrate metallic substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/52—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
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- H10P14/46—
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
La présente invention concerne une solution de dépôt autocatalytique utile pour former un film protecteur destiné à protéger sélectivement la surface des interconnexions exposées d'un dispositif à semi-conducteurs. Le dispositif à semi-conducteurs présente une structure d'interconnexion intégrée telle qu'un conducteur électrique, comme le cuivre ou l'argent, est encastré dans des niches fines pour des interconnexions formées à la surface d'un substrat à semi-conducteurs. L'invention concerne également un dispositif à semi-conducteurs dans lequel la surface des interconnexions exposées est protégée sélectivement par un film protecteur. La solution de dépôt autocatalytique contient des ions de cobalt, un agent complexant et un agent réducteur exempt de métal alcalin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020037015760A KR100891344B1 (ko) | 2001-06-01 | 2002-05-30 | 무전해 도금액 및 반도체 디바이스 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001167355 | 2001-06-01 | ||
| JP2001-167355 | 2001-06-01 | ||
| JP2001179341A JP2003049280A (ja) | 2001-06-01 | 2001-06-13 | 無電解めっき液及び半導体装置 |
| JP2001-179341 | 2001-06-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2002099164A2 WO2002099164A2 (fr) | 2002-12-12 |
| WO2002099164A3 true WO2002099164A3 (fr) | 2004-05-21 |
Family
ID=26616238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2002/005250 Ceased WO2002099164A2 (fr) | 2001-06-01 | 2002-05-30 | Solution de depot autocatalytique et dispositif a semi-conducteurs |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2003049280A (fr) |
| KR (1) | KR100891344B1 (fr) |
| CN (1) | CN1285764C (fr) |
| TW (1) | TW543091B (fr) |
| WO (1) | WO2002099164A2 (fr) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004304021A (ja) * | 2003-03-31 | 2004-10-28 | Ebara Corp | 半導体装置の製造方法及び製造装置 |
| JP4663965B2 (ja) * | 2003-02-27 | 2011-04-06 | 株式会社荏原製作所 | 基板処理方法及び基板処理装置 |
| JP2005015885A (ja) * | 2003-06-27 | 2005-01-20 | Ebara Corp | 基板処理方法及び装置 |
| KR100859259B1 (ko) * | 2005-12-29 | 2008-09-18 | 주식회사 엘지화학 | 캡층 형성을 위한 코발트 계열 합금 무전해 도금 용액 및이를 이용하는 무전해 도금 방법 |
| JP2007246981A (ja) * | 2006-03-15 | 2007-09-27 | Jsr Corp | 無電解めっき液 |
| JP2007246980A (ja) * | 2006-03-15 | 2007-09-27 | Jsr Corp | 無電解めっき液 |
| JP2007246979A (ja) * | 2006-03-15 | 2007-09-27 | Jsr Corp | 無電解めっき液 |
| JP2007246978A (ja) * | 2006-03-15 | 2007-09-27 | Jsr Corp | 無電解めっき液 |
| KR100774651B1 (ko) | 2006-07-21 | 2007-11-08 | 동부일렉트로닉스 주식회사 | 반도체 소자의 구리배선 형성방법 및 구조 |
| TW200825207A (en) * | 2006-09-29 | 2008-06-16 | Wako Pure Chem Ind Ltd | Composition for nonelectrolytic plating and method of forming metallic protection film using the same |
| US7794530B2 (en) * | 2006-12-22 | 2010-09-14 | Lam Research Corporation | Electroless deposition of cobalt alloys |
| US9496145B2 (en) | 2014-03-19 | 2016-11-15 | Applied Materials, Inc. | Electrochemical plating methods |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3917464A (en) * | 1973-07-20 | 1975-11-04 | Us Army | Electroless deposition of cobalt boron |
| EP0525282A2 (fr) * | 1991-06-24 | 1993-02-03 | Shipley Company Inc. | Dépôt chimique contrôlé |
| US5240497A (en) * | 1991-10-08 | 1993-08-31 | Cornell Research Foundation, Inc. | Alkaline free electroless deposition |
| US5695810A (en) * | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4232060A (en) * | 1979-01-22 | 1980-11-04 | Richardson Chemical Company | Method of preparing substrate surface for electroless plating and products produced thereby |
| WO1990009468A1 (fr) * | 1989-02-17 | 1990-08-23 | Polymetals Technology Limited | Composition et procede de revetement |
| JPH051384A (ja) * | 1991-06-21 | 1993-01-08 | Nec Corp | 無電解めつき浴 |
| JP3514800B2 (ja) * | 1994-01-27 | 2004-03-31 | 哲彌 逢坂 | 軟磁性薄膜およびその製造方法 |
| KR19990015599A (ko) * | 1997-08-07 | 1999-03-05 | 윤종용 | 무전해 도금을 이용한 반도체장치의 듀얼 다마슨금속 배선층 형성방법 |
| US6342733B1 (en) * | 1999-07-27 | 2002-01-29 | International Business Machines Corporation | Reduced electromigration and stressed induced migration of Cu wires by surface coating |
-
2001
- 2001-06-13 JP JP2001179341A patent/JP2003049280A/ja active Pending
-
2002
- 2002-05-30 CN CNB028111192A patent/CN1285764C/zh not_active Expired - Fee Related
- 2002-05-30 KR KR1020037015760A patent/KR100891344B1/ko not_active Expired - Fee Related
- 2002-05-30 WO PCT/JP2002/005250 patent/WO2002099164A2/fr not_active Ceased
- 2002-05-30 TW TW091111514A patent/TW543091B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3917464A (en) * | 1973-07-20 | 1975-11-04 | Us Army | Electroless deposition of cobalt boron |
| EP0525282A2 (fr) * | 1991-06-24 | 1993-02-03 | Shipley Company Inc. | Dépôt chimique contrôlé |
| US5240497A (en) * | 1991-10-08 | 1993-08-31 | Cornell Research Foundation, Inc. | Alkaline free electroless deposition |
| US5695810A (en) * | 1996-11-20 | 1997-12-09 | Cornell Research Foundation, Inc. | Use of cobalt tungsten phosphide as a barrier material for copper metallization |
Also Published As
| Publication number | Publication date |
|---|---|
| TW543091B (en) | 2003-07-21 |
| JP2003049280A (ja) | 2003-02-21 |
| WO2002099164A2 (fr) | 2002-12-12 |
| KR100891344B1 (ko) | 2009-03-31 |
| CN1285764C (zh) | 2006-11-22 |
| CN1527888A (zh) | 2004-09-08 |
| KR20040008205A (ko) | 2004-01-28 |
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