[go: up one dir, main page]

WO2002075385A1 - Dispositif a integration monolithique base sur la silice - Google Patents

Dispositif a integration monolithique base sur la silice Download PDF

Info

Publication number
WO2002075385A1
WO2002075385A1 PCT/AU2002/000287 AU0200287W WO02075385A1 WO 2002075385 A1 WO2002075385 A1 WO 2002075385A1 AU 0200287 W AU0200287 W AU 0200287W WO 02075385 A1 WO02075385 A1 WO 02075385A1
Authority
WO
WIPO (PCT)
Prior art keywords
optical
type
waveguide
silica
waveguide device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/AU2002/000287
Other languages
English (en)
Inventor
Michael Bazylenko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Redfern Integrated Optics Pty Ltd
Original Assignee
Redfern Integrated Optics Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Redfern Integrated Optics Pty Ltd filed Critical Redfern Integrated Optics Pty Ltd
Publication of WO2002075385A1 publication Critical patent/WO2002075385A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12038—Glass (SiO2 based materials)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12069—Organic material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12173—Masking

Definitions

  • the present invention relates to planar photonic waveguide devices.
  • Background of the invention Optical devices are becoming increasingly important in telecommunication systems which utilise optical fibres for the transmission of information.
  • optical switching capabilities are required when routing signals from one destination to another.
  • optical amplification devices are also of significant importance.
  • optical devices tend to be made from many different technologies and therefore require a complex interconnection and packaging systems and their manufacture tends to be highly labour intensive and difficult to mass produce.
  • an optical device comprising: a planar substrate; at least one first type of waveguide device component having a silica-based core formed on said substrate; and at least one second type of waveguide device component having a substantially non-silica-based core formed on said substrate; wherein said first and second types of waveguide components are arranged to perform different optical signal processing functions and are integrated monolithically on said substrate, said first and second components being in optical communication with each other.
  • the second type of waveguide device component may include a device arranged to perform one of optical amplification, optical modulation or switching.
  • the second type of waveguide device component may include a device arranged to emit light at a predetermined wavelength or at a series of predetermined wavelengths.
  • the second type of waveguide device component may be arranged perform amplification and the first type of waveguide device component may be arranged to perform gain equalization.
  • the first and second types of waveguide device components may be directly optically coupled totogether.
  • the first and second types of waveguide device components may be in optical communication via an intermediate planar waveguide and/or planar waveguide device.
  • the second type of waveguide device component may include a non-silica-based waveguide structure arranged to perform amplification and the first type of waveguide device component may be arranged to perform multiplexing and channel power equalization
  • the second type of waveguide device component may include a non-silica-based waveguide structure arranged to perform optical amplification and to be coupled to the second type of waveguide device component may be arranged to perform de-multiplexing and channel power equalization
  • the second type of waveguide device component may include a component arranged to perform optical amplification and may be coupled to at least one of the first type of waveguide device components which may be arranged to perform multiplexing/de-multiplexing, channel power monitoring and equalization functions.
  • the second type of waveguide device component may be arranged to perform light emission at a number of specified wavelengths and optical power modulation of each of the specified wavelengths, and the first type of waveguide device component may be arranged to multiplex the modulated signals into a single output waveguide.
  • the second type of waveguide device component may include a non-silica-based waveguide structure arranged to perform switching and to be coupled to the first type of waveguide device component which may be arranged to perform multiplexing or de-multiplexing.
  • the first type of waveguide device component may be arranged to perform one or more of the following functions: wavelength multiplexing; wavelength de-multiplexing; gain equalization; power equalization; power monitoring; optical attenuation; slow switching, on a millisecond scale; wavelength selection; wavelength stabilization; optical power splitting; optical power combination; or combining pump and transmission wavelength signals.
  • the second type of waveguide device component may be arranged to perform one or more the following functions: optical power modulation; optical phase modulation; amplification; lasing; fast switching, on less than a 0.1 millisecond time scale; optical detection; optical circulation; optical isolation; polarization splitting; or lasing and wavelength tuning.
  • First and second optical mode(s) of the first and second types of waveguide device may be aligned together wherever the first and second components are optically coupled together, so as to reduce optical coupling losses between the two components.
  • the mode alignment can be achieved by horizontal alignment (in a direction parallel to the plane of the substrate) of the cores by means of photolithographic mask alignment with a series of aligning marks fabricated in the substrate or in any of the previously formed layers.
  • Vertical alignment in a direction perpendicular to the substrate
  • the devices within the second type of waveguide device component are enclosed in the core of the silica-based waveguide so that the optical mode of the combined structure can be aligned with the optical mode of the first type of waveguide device component.
  • Grooves are may be fabricated along the second type of waveguide device component to relieve mechanical stresses that can be generated in the component by mismatches in the thermal expansion coefficients of the silica-based and non-silica-based materials. Further, the interface between silica-based and any non-silica-based material layers can be made at an angle chosen so as to suppress back-reflections from the interface while maintaining optimal coupling.
  • the second type of waveguide device component may include materials requiring thermal treatment at temperatures higher than 500 degrees Celsius and the fabrication sequence may be arranged in such a way that the higher temperature steps which may adversely affect other materials are performed before those materials are deposited.
  • a final cladding layer of silica-based material can be deposited at a temperature that does not exceed a maximum allowable temperature for any of the materials in the second type of waveguide device component.
  • the silica-based waveguide material may be deposited by plasma-enhanced chemical vapour deposition (PECVD) such that it has low optical loss at the optical signal wavelength after the deposition.
  • PECVD plasma-enhanced chemical vapour deposition
  • the PECVD can be performed in the absence of nitrogen or nitrogen-containing gases.
  • the PECVD can be performed using liquid source of silicon.
  • the liquid source can be tetraethyloxysilane (TEOS).
  • TEOS tetraethyloxysilane
  • Non-silica-based materials may be used for optical power modulation, phase modulation or switching and can include an electro-optic material having a high linear electro-optic coefficient.
  • the electro-optic material may comprise PZT, PLZT or PLT.
  • the non-silica-based material may include a material doped with a rare earth element, such as erbium and optionally ytterbium, and may be arranged to perform optical amplification or lasing within the device.
  • the non-silica-based material may be aluminium oxide-based.
  • the second type of waveguide device component may include a polymer material.
  • a cladding layer can be deposited over the polymer material portions, the cladding layer hermetically sealing the polymer material portions.
  • the cladding layer can be deposited using a low-temperature PECVD deposition process. The low-temperature PECVD deposition ideally occurs at a temperature sufficiently low to avoid degradation of optical or electro-optic properties of the polymer material.
  • Fig. 1 illustrates schematically the components in an embodiment of the invention
  • Figs. 2 to 5 are sectional views illustrating various stages in the manufacture of an embodiment of the mvention;
  • Fig. 6 illustrates schematically a switching device formed from silica and non-silica sub devices;
  • Fig. 7 illustrates schematically an optical amplifier device formed from silica and non- silica sub devices
  • Fig. 8 illustrates schematically an amplifier device formed from silica and non-silica sub devices
  • Fig. 9 illustrates schematically a transmitter device formed from silica and non-silica sub devices
  • Fig. 10 is a sectional view illustrating a modified manufacturing process
  • Fig. 11 is a sectional view of an alternative coupling of silica and non-silica layers
  • Fig. 12 is a schematic plan view of an embodiment of the invention which includes a series of thermal expansion slots
  • Fig. 13 is a sectional view of the embodiment shown in Fig. 12;
  • Fig. 14 is a sectional view of an alternative embodiment designed to suppress back reflections.
  • both silica and non-silica active elements are incorporated on a planar substrate through a monolithic integration process to produce highly integrated optical chips as a product of automated wafer processing fabrication sequences.
  • a silica-based device 2 and a non-silica-based device 3 are incorporated on a single planar substrate 1.
  • the two devices are connected by means of waveguides 4, 5, 6 (with the waveguide also continuing through at least the silica-based device 2) in order to provide optical communication between the two devices.
  • Light may be launched into the devices 2,3 by either of the waveguides 4,6.
  • Fig. 2 the fabrication process starts with an initial substrate 1 upon which is deposited a buffer layer 2.
  • the buffer layer is provided to optically isolate subsequent waveguide layers from the substrate.
  • the buffer layer can comprise silicon dioxide, such as thermally-grown silicon dioxide.
  • a non-silica waveguide layer is deposited and etched into the required waveguide core configuration 4.
  • the waveguide core 4 has a channel geometry but it will be understood that other core configurations, such as rib or ridge geometries, are included within the scope of the invention.
  • the layout of the waveguide core 4 on the substrate is controlled by lithographically-defined etching.
  • a silica-based layer is then deposited over the non-silica core 4 and etched so as to form a silica-based waveguide core 3 which is coupled to the non- silica core 4.
  • a silica cladding layer 5 is deposited over both cores 3,4. Both cores 3,4 have a higher refractive index than the buffer layer 2 and cladding layer 5.
  • the refractive index of the silica-based core 3 is controlled by incorporating one or more dopants such as germanium dioxide.
  • a device 20 including a silica-based demultiplexer 21, a non-silica-based switching array 22 which includes add/drop multiplexing capabilities, and a silica-based multiplexer 23.
  • An input waveguide 24 delivers signals of different wavelengths which are separated into individual channels by the demultiplexer 21, switched in the switch array 22 (with some of the signals being dropped and other signals being added) before being combined in multiplexer 23 and output via waveguide 24, thereby providing switching capabilities on a single wafer.
  • the optical amplifier 32 is arranged to amplify input signals received via waveguide 34 and the gain equalizer is arranged to equalize the gains of signals 35 so as to produce a relatively uniform spectral output via waveguide 36.
  • Fig. 8 there is illustrated a further amplifier design 40 formed on wafer 41 wherein a series of input waveguide signals 42, 43, 44 are amplified by amplifiers 45, 46, 47 which can be non-silica-based. Subsequently, the amplified power levels are adjusted by respective variable optical attenuators 51-53 before being fed to a multiplexer 48 and output 50.
  • an optical transmitter which includes a series of lasers 61-63 which can be non-silica-based.
  • the lasers feed a series of modulators 64-66 which modulate the laser signal before being combined by multiplexer 67 and output at waveguide 68.
  • Refinements can be made in the manufacturing processes depending on requirements. For example, various techniques can be used for optical mode alignment including achieving horizontal alignment (i.e. alignment parallel to the plane of the substrate) by utilization of photolithographic mask alignment. Vertical alignment in the direction perpendicular to the substrate can be achieved by adjustment of the thickness of the various layers including the buffer layer, so as to align the core of each layer. For example, in Fig. 10, a step 70 is etched in the buffer layer 71 so as to better match the heights of the optical modes of the silica waveguide layer 72 and the non-silica waveguide layer 73.
  • Fig. 11 illustrates a different arrangement whereby a silica core layer 75 is coupled to a non- silica layer 76 by placing the non-silica layer above (or, alternatively, below) the silica layer.
  • a series of thermal expansion grooves 78,79 are provided at predetermined places so as to relieve stresses arising from differences in thermal expansion of a silica-based waveguide 80 and adjoining silica layers.
  • Fig. 13 is a sectional view through the arrangement of Fig.
  • FIG. 14 A further modification is illustrated in Fig. 14 wherein the angle of abutment of the silica layer 82 and non-silica layer 84 can be adjusted so as to provide an angular profiled surface 86 arranged to suppress back-reflections at the interface between silica and non-silica surfaces.
  • the optimal angle is one which substantially suppresses the back-reflections whilst maximising the transmitted power, and is dependent on the refractive index contrast between the two layers 82,84.
  • Non-silica-based materials can be used for optical power modulation, phase modulation or switching and can include an electro-optic material, preferably having a high linear electro- optic coefficient. Suitable materials include PZT, PLZT or PLT.
  • the non- silica-based material can incorporate a material doped with a rare earth element such as erbium, which can be used for optical amplification and lasing within the device.
  • the non- silica-based material can comprise aluminium oxide which is doped with erbium.
  • non-silica material can include polymer-based material.
  • the polymer- based material can be deposited and encapsulated within the silica-based material with the beneficial side effect that the environmental stability of the waveguide may be improved, diminishing the need for hermetic packaging.
  • the cladding layer can be employed to encapsulate the polymer without substantially damaging operational characteristics of the polymer layer.
  • the temperature of the PECVD process is lower than the reflow temperature of the polymer material.
  • Polymer waveguide components or layers can then be used for activities such as low power thermo-optical switching and, when electro-optical polymers are employed, fast electro- optic switching.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

La présente invention concerne un dispositif de guidage d'onde optique à intégration monolithique formé sur un substrat sensiblement plan. Deux types de composants optiques sont formés sur le même substrat: au moins un premier type de composant de dispositif de guidage d'onde comprenant une partie centrale basée sur la silice; et au moins un second type de composant de dispositif de guidage d'onde ayant une partie centrale sensiblement non basée sur la silice. Le premier et le second type de composant de dispositif de guidage d'onde communiquent entre eux d'un point de vue optique et sont conçus pour mettre en oeuvre différentes fonctions de traitement de signaux optiques. Les fonctions pouvant être mises en oeuvre par le premier type de composant comprennent par exemple le multiplexage, le démultiplexage, l'égalisation de gain, ou l'atténuation optique. Les fonctions pouvant être mises en oeuvre par le second type de composant comprennent par exemple la modulation de puissance optique, l'amplification optique, et l'émission lumineuse.
PCT/AU2002/000287 2001-03-16 2002-03-15 Dispositif a integration monolithique base sur la silice Ceased WO2002075385A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPR3790 2001-03-16
AUPR3790A AUPR379001A0 (en) 2001-03-16 2001-03-16 Silica based monolithically integrated device and method

Publications (1)

Publication Number Publication Date
WO2002075385A1 true WO2002075385A1 (fr) 2002-09-26

Family

ID=3827798

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/AU2002/000287 Ceased WO2002075385A1 (fr) 2001-03-16 2002-03-15 Dispositif a integration monolithique base sur la silice

Country Status (2)

Country Link
AU (1) AUPR379001A0 (fr)
WO (1) WO2002075385A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113872699A (zh) * 2021-11-08 2021-12-31 中国电信股份有限公司 光发射装置、方法及光模块

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999009440A1 (fr) * 1997-08-13 1999-02-25 Foster-Miller, Inc. Composants optiques commutables
US6064783A (en) * 1994-05-25 2000-05-16 Congdon; Philip A. Integrated laser and coupled waveguide
WO2000028355A2 (fr) * 1998-11-10 2000-05-18 Lightwave Microsystems Corporation Dispositifs photoniques comprenant un polymere thermo-optique
US6144780A (en) * 1998-10-05 2000-11-07 Lucent Technologies Inc. Polymer waveguide switch and method
EP1089098A1 (fr) * 1999-09-28 2001-04-04 Corning Incorporated Multiplexeur en longueur d'onde avec des canaux remplis de polymères et procédé de fabrication

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6064783A (en) * 1994-05-25 2000-05-16 Congdon; Philip A. Integrated laser and coupled waveguide
WO1999009440A1 (fr) * 1997-08-13 1999-02-25 Foster-Miller, Inc. Composants optiques commutables
US6144780A (en) * 1998-10-05 2000-11-07 Lucent Technologies Inc. Polymer waveguide switch and method
WO2000028355A2 (fr) * 1998-11-10 2000-05-18 Lightwave Microsystems Corporation Dispositifs photoniques comprenant un polymere thermo-optique
EP1089098A1 (fr) * 1999-09-28 2001-04-04 Corning Incorporated Multiplexeur en longueur d'onde avec des canaux remplis de polymères et procédé de fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113872699A (zh) * 2021-11-08 2021-12-31 中国电信股份有限公司 光发射装置、方法及光模块

Also Published As

Publication number Publication date
AUPR379001A0 (en) 2001-04-12

Similar Documents

Publication Publication Date Title
Kato et al. PLC hybrid integration technology and its application to photonic components
EP1994653B9 (fr) Procédé et système conçus pour des emetteurs dwdm intégrés
Himeno et al. Silica-based planar lightwave circuits
KR100705865B1 (ko) 집적된 배열 도파관 격자 및 광 증폭기를 갖는 광 집적 회로를 포함하는 장치, 시스템 및 방법
US6981804B2 (en) Vertically integrated optical devices coupled to optical fibers
US10459166B2 (en) Optical coupling scheme
US8050525B2 (en) Method and system for grating taps for monitoring a DWDM transmitter array integrated on a PLC platform
US8320763B2 (en) Planar lightwave circuit (PLC) device wavelength tunable light source comprising the same device and wavelength division multiplexing-passive optical network (WDM-PON) using the same light source
Inoue et al. A four-channel optical waveguide multi/demultiplexer for 5-GHz spaced optical FDM transmission
Nishi et al. Integration of eight-channel directly modulated membrane-laser array and SiN AWG multiplexer on Si
US8285150B2 (en) Method and system for integrated DWDM transmitters
US11114815B1 (en) Rare-earth ion-doped waveguide amplifiers
JP2007500370A (ja) 中空導波路を組み込むモノリシック光送信及び受信装置
JP3479220B2 (ja) 光集積モジュール
EP2652534B1 (fr) Circuit intégré opto-électronique à base de silicium à pertes dépendant de la polarisation réduites
Tong Multiwavelength receivers for WDM systems
EP1560047A1 (fr) Séparateur de polarisation intégré monolithiquement
WO2002075385A1 (fr) Dispositif a integration monolithique base sur la silice
US20040151429A1 (en) Integrated double pass equalizer for telecommunications networks
Kato et al. Hybrid Integrated 4< cd0215f. gif> 4 Optical Matrix Switch Module on Silica Based Planar Waveguide Platform
Powell et al. What integrated optics is really used for
Pan et al. Advantages of low-cost, miniature, intelligent EDFAs for next-generation dynamic metro/access networks
US12451966B1 (en) Optical communication systems and silicon photonics passive multiplexers and demultiplexers having Mach-Zehnder interferometer structures
EP4657678A1 (fr) Intégration de guides d&#39;ondes en nitrure de silicium à faible perte dopés à l&#39;erbium sur des photoniques en silicium
US20020150331A1 (en) Hybridised fibre amplifier/waveguide structures

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PH PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP