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WO2002041363A3 - Procédés et systèmes de dépôt au laser - Google Patents

Procédés et systèmes de dépôt au laser Download PDF

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Publication number
WO2002041363A3
WO2002041363A3 PCT/US2001/043586 US0143586W WO0241363A3 WO 2002041363 A3 WO2002041363 A3 WO 2002041363A3 US 0143586 W US0143586 W US 0143586W WO 0241363 A3 WO0241363 A3 WO 0241363A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
laser
assisted deposition
laser assisted
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/043586
Other languages
English (en)
Other versions
WO2002041363A9 (fr
WO2002041363A2 (fr
Inventor
Norman F Dessel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SolarFlex Technologies Inc
Original Assignee
SolarFlex Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/892,131 external-priority patent/US6548751B2/en
Application filed by SolarFlex Technologies Inc filed Critical SolarFlex Technologies Inc
Priority to AU2002233930A priority Critical patent/AU2002233930A1/en
Publication of WO2002041363A2 publication Critical patent/WO2002041363A2/fr
Publication of WO2002041363A3 publication Critical patent/WO2002041363A3/fr
Anticipated expiration legal-status Critical
Publication of WO2002041363A9 publication Critical patent/WO2002041363A9/fr
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C23C14/5813—Thermal treatment using lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1257—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising growth substrates not made of Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne des systèmes et procédés de dépôt au laser utilisant une source d'énergie telle qu'un laser pour déposer tout en recuisant une couche fine de matériau semi-conducteur ou métallique sur un substrat. L'uniformité de la chauffe du matériau déposé pendant la pulvérisation sous vide la couche rend inutile toute opération ultérieure de recuit. Le laser peut être pulsé ou à onde continue. Le substrat peut être un plastique tel que Tedlar, le Mylar, le Téflon ou le Tefzel. Ces systèmes et procédés de dépôt au laser conviennent pour la fabrication de cellules photovoltaïques, et notamment de cellules photovoltaïques au tellurure de cadmium (CdTe) sous vitre au sulfure de cadmium (CdS). Pour la croissance de la couche, on peut avoir recours aussi bien à la pulvérisation sous vide qu'à la sublimation.
PCT/US2001/043586 2000-11-16 2001-11-16 Procédés et systèmes de dépôt au laser Ceased WO2002041363A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2002233930A AU2002233930A1 (en) 2000-11-16 2001-11-16 System and methods for laser assisted deposition

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US24936700P 2000-11-16 2000-11-16
US60/249,367 2000-11-16
US25476000P 2000-12-12 2000-12-12
US60/254,760 2000-12-12
US09/892,131 2001-06-25
US09/892,131 US6548751B2 (en) 2000-12-12 2001-06-25 Thin film flexible solar cell

Publications (3)

Publication Number Publication Date
WO2002041363A2 WO2002041363A2 (fr) 2002-05-23
WO2002041363A3 true WO2002041363A3 (fr) 2003-05-15
WO2002041363A9 WO2002041363A9 (fr) 2003-11-20

Family

ID=27400201

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/043586 Ceased WO2002041363A2 (fr) 2000-11-16 2001-11-16 Procédés et systèmes de dépôt au laser

Country Status (2)

Country Link
AU (1) AU2002233930A1 (fr)
WO (1) WO2002041363A2 (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
SE527733C2 (sv) 2004-10-08 2006-05-23 Midsummer Ab Anordning och metod för att tillverka solceller
WO2010071638A1 (fr) * 2008-12-17 2010-06-24 Sionyx, Inc. Procédé et appareil pour le traitement au laser d'un appareil photovoltaïque semi-conducteur
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
EP2583312A2 (fr) 2010-06-18 2013-04-24 Sionyx, Inc. Dispositifs photosensibles à grande vitesse et procédés associés
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20130016203A1 (en) 2011-07-13 2013-01-17 Saylor Stephen D Biometric imaging devices and associated methods
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
WO2014151093A1 (fr) 2013-03-15 2014-09-25 Sionyx, Inc. Imagerie tridimensionnelle utilisant des dispositifs imageurs empilés et procédés associés
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
CN112951933A (zh) * 2021-02-24 2021-06-11 青岛科技大学 室温脉冲激光沉积法制备铜锌锡硫/硫化铋薄膜异质结

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5393675A (en) * 1993-05-10 1995-02-28 The University Of Toledo Process for RF sputtering of cadmium telluride photovoltaic cell
JPH09148267A (ja) * 1995-11-22 1997-06-06 Semiconductor Energy Lab Co Ltd レーザーアニール方法およびレーザーアニール装置
US5739043A (en) * 1992-03-25 1998-04-14 Kanegafuchi Chemical Industry Co., Ltd. Method for producing a substrate having crystalline silicon nuclei for forming a polysilicon thin film
WO2000007250A1 (fr) * 1998-07-30 2000-02-10 Agfa-Gevaert Naamloze Vennootschap Procede servant a fabriquer des piles solaires
DE19904082A1 (de) * 1999-02-02 2000-08-03 Agfa Gevaert Ag Verfahren zur Herstellung von Solarzellen

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739043A (en) * 1992-03-25 1998-04-14 Kanegafuchi Chemical Industry Co., Ltd. Method for producing a substrate having crystalline silicon nuclei for forming a polysilicon thin film
US5393675A (en) * 1993-05-10 1995-02-28 The University Of Toledo Process for RF sputtering of cadmium telluride photovoltaic cell
JPH09148267A (ja) * 1995-11-22 1997-06-06 Semiconductor Energy Lab Co Ltd レーザーアニール方法およびレーザーアニール装置
WO2000007250A1 (fr) * 1998-07-30 2000-02-10 Agfa-Gevaert Naamloze Vennootschap Procede servant a fabriquer des piles solaires
DE19904082A1 (de) * 1999-02-02 2000-08-03 Agfa Gevaert Ag Verfahren zur Herstellung von Solarzellen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 10 31 October 1997 (1997-10-31) *

Also Published As

Publication number Publication date
WO2002041363A9 (fr) 2003-11-20
WO2002041363A2 (fr) 2002-05-23
AU2002233930A1 (en) 2002-05-27

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