WO2001020502A9 - Optimal phase conflict removal for layout of alternating phase-shifting masks - Google Patents
Optimal phase conflict removal for layout of alternating phase-shifting masksInfo
- Publication number
- WO2001020502A9 WO2001020502A9 PCT/US2000/025572 US0025572W WO0120502A9 WO 2001020502 A9 WO2001020502 A9 WO 2001020502A9 US 0025572 W US0025572 W US 0025572W WO 0120502 A9 WO0120502 A9 WO 0120502A9
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phase
- layout
- feature
- graph
- conflict
- Prior art date
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- Ceased
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
Definitions
- Deletion is accomplished by increasing the lower bound on separation between the corresponding features, and then applying a compactor to perturb the shape or position of these features (see Figure 7).
- This approach may be feasible for the cell layout editing context but likely does not scale to large instances since the number of odd cycles can be exponential in the size of the layout.
- the heuristic does not. necessarily delete the minimum number of edges, nor will it necessarily select edges whose deletion will have minimum impact on the layout. Ooi et al. (see “Method of Designing Phase-Shifting Masks Utilizing a Compactor", K Ooi, K. Koyama andM. Kiryu, Japan Journal of Applied Physics 33 (1994), pp.
- compaction-based method which (i) produces a symbolic layout from the mask layout; (ii) performs phase assignment in the symbolic layout; and (iii) compacts the symbolic layout using minimum spacing design rules consistent with the phase assignment.
- the advantage of compaction-based method is that it is fully automated and guarantees to remove all odd cycles from the conflict graph.
- the phase assignment step is relatively oblivious to details to the mask layout; the ensuing compaction step may not minimize distortion of the original layout.
- the present invention gives a new method for resolving phase conflicts for dark-field and bright-field alternating phase-shifting mask technologies.
- this method consists of • A new 2-coloring and compaction approach that simultaneously optimizes layout and phase assignment which is based on planar embedding of an associated phase conflict graph.
- Feature graph • a new 2-coloring and compaction approach that simultaneously optimizes layout and phase assignment which is based on planar embedding of an associated feature graph.
- Feature graph incorporates two types of layout modifications: increasing spacing and changing the width of critical features.
- Alternating phase-shifting mask (AltPSM) technology is enabling to subwavelength process technology.
- AltPSM uses destructive interference between opposite- phase light (e.g., 0 phase and 180 phase) to improve contrast on the wafer between exposed and unexposed regions (see Figure 1).
- AltPSM affects circuit layout because there is no longer any concept of a "complete" design rules set: layout is correct if and only if a given layout-derived graph can be 2-colored. Since 2-colorability of this derived graph is difficult to maintain during layout creation, all proposed solutions use post-processing of layout to identify required perturbations, followed by layout compaction to achieve a phase-assignable final layout.
- ALtPSM There are two essentially different ALtPSM technologies: (1) dark-field AltPSM where the clearpage region corresponds to a feature (the negative photoresist is used) and (2) bright-field AltPSM where the clearpage region corresponds to gaps between features (the positive photoresist is used). For the both technologies it is necessary to assign phases to clearpage regions corresponding to 0 or 180 phase of the assigned light.
- b ⁇ B define a simplified relationship between printability and the distance between two clearpage regions in the dark-field AltPSM technology.
- the distance between any two features cannot be smaller than b without violating the minimum spacing design rule. If the distance between two features is at least b but smaller than B, the features are in phase conflict. Phase conflict can be resolved by assigning opposite phases to the conflicting features.
- B defines the mimmum spacing rule when two features have the same phase. If the distance between two features is greater than or equal to B, there is no phase conflict and the features can be assigned arbitrary phases.
- the values of b and B are layer-dependent.
- w > b denote the minimum allowed width of any feature on the layer of interest.
- the Phase Assignment Problem Given a layout, assign phases to all features such that no two conflicting features are assigned the same phase. If the phase assignment problem has a feasible solution, i.e., the layout is PSM-feasible, then the dark-field AltPSM technology can be applied for manufacturing of this layout.
- the overall objective of PSM layout design is to achieve minimum-area layout while maintaining PSM-feasibility, but assuming that feature widths and spacings can be sealed down to values achievable using PSM, will lead to well-compacted but PSM- infeasible layouts. This induces the following problem.
- the feature is formed by exposing two masks: (i) a "locally bright-field" AltPSM mask, followed by (ii) a binary (non-phase-shifting, standard chrome on glass) mask that protects the critical portion of the feature from light while also defining the non-critical width portions of the feature.
- phase shifters When the majority of features are at critical width then the incidence of phase shifters becomes "dense": the layout must leave room for phase shifters around nearly every feature, and finding compatible assignments of phases to shifters must be ensured. The latter task is quite difficult, and maintaining design productivity for logic applications requires automated phase-mask layout tools.
- Figure 3 shows that when two vertical critical features are closely spaced, their phase shifters overlap, and must be assigned the same phase.
- the features are widely spaced, their phase shifters can be assigned phases independently.
- the overlap between shifters introduces dependencies between the phase assignments to shifters of corresponding features.
- Figure 4 gives simple layout examples for which there is no assignment of 0 and 180 phases to the shifters, such that (i) there are opposite-phase shifters on either side of each feature, and (ii) any shifters that overlap are assigned the same phase.
- the phase assignment to shifters should eliminate or reduce the number of cases when adjacent shifters get opposite phases.
- a violation of condition (1) can be corrected via layout modification that increases the width of the corresponding critical feature, i.e., the feature must become sufficiently wide that it can be manufactured without phase shifting.
- a violation of condition (2) is corrected by layout modification that increases the spacing between critical features. Note that the "odd cycle" problem illustrated in Figure 4 can in general be interpreted as a violation of either condition 1 or condition 2 (!) - and hence can be corrected by increasing either feature width or feature spacing. It is necessary to minimize the total cost of the layout modifications applied:
- phase conflict in which the Phase Assignment Problem is reduced to node bicoloring.
- Section 4.2 describe new methods of design modification which ensure bicolorability of the associated phase conflict graph.
- Section 4.3 we reduce the Phase Assignment Problem to the Minimum Perturbation Problem in the phase conflict graph and to the T-join problem on the dual graph of the phase conflict graph.
- Section 4.4 we present
- phase conflict graph G (V, E) is constructed by defining a node for each feature, and introducing an edge between two nodes exactly when the corresponding features are in phase conflict.
- the phase conflict graph can be constructed in 0(n log ⁇ ) time, where n is the total number of segments in all polygon boundaries.
- phase conflict graph G In alternating PSM, we can remove all phase conflicts by assigning opposite phases to each pair of adjacent nodes in the phase conflict graph G. This is equivalent to 2- coloring the rules of G with phase 0 and phase 180. For this to be possible, G must be bipartite, i.e., have no odd cycles. Hence, if the phase conflict graph G is not bipartite, our goal is to delete enough edges such that no odd cycles exist in the remaining modified phase conflict graph. Edge deletion in the phase conflict graph is achieved by changing the placement of layout features so that they no longer conflict.
- manufacturability creates highly non-obvious, non-local constraints on the layout. Efficient algorithms that we give below for removing odd cycles depend on
- phase conflict graph may contain non-planar local configurations like the one in Fig. 2(a). Diagonal conflicts effectively do not exist because of interference effects. Therefore, the deletion of intersecting diagonals from the phase conflict graph will not compromise the effectiveness of the resulting PSM.
- phase conflict graph G is planar.
- phase conflict graph should be embedded into the plane. Embedding is fully determined by the cyclic order of edges incident to each node, i.e., by the cyclic order of nodes adjacent to a given node. Note that the order induced by segments connecting the centers of adjacent rectangles may be incompatible with a planar embedding, e.g., if rectangles have large aspect ratio (see Figure 6(a)). We use the following cyclic order of adjacent rectangles (see Figure 6(b)).
- All rectangles adjacent to a given rectangle R are partitioned into four groups consisting of: (i) rectangles positioned to the right of R (i.e., having left side to the right of the right side of R); (ii) rectangles positioned below R which do not belong to group (i); (iii) rectangles positioned to the left of R which do not belong to group (ii); and (iv) rectangles positioned above R which do not belong to groups (i) and (iii).
- rectangles from group (i) precede those from group (ii) which in turn precede those from group (iii), which in turn precede those from group (iv).
- the rectangles are sorted (i) in decreasing order of their -coordinates, (ii) in decreasing order of their x-coordinates, (iii) in increasing order of their -coordinates, and (iv) in increasing order of their x-coordinates.
- the overall objective of PSM layout design is to achieve minimum-area layout while maintaining PSM-feasibility.
- Our "one-shot" flow assumes that an automated-custom or migration flow will essentially start out by being “optimistic”, i.e., by assuming that feature widths and spacings can be scaled down to values achievable using PSM.
- the optimistic assumption will typically result in a design that: cannot be phase-assigned, due to the presence of odd cycles. This induces a "minimum perturbation” problem: we seek a "minimum perturbation" of the layout, in terms of odd cycle breaking and resultant B spacing constraints between pairs of features that previously had b spacings.
- Optimal phase assignment can be found by solving the following problem.
- the Minimum Perturbation Problem Given a planar graph G - (V, E) with weighted (multiple) edges, find the minimum-weight edge set M such that the graph (V, E - M) contains no odd cycles.
- the valid assignment of phases can be found using breadth-first search. For each connected component of the phase conflict graph (the weight of each edge is set to 1), starting from arbitrary node v breadth-first search determines the distance from v to each other node u. If the distance from v to u is even, then u is assigned the same phase as v; otherwise, u is assigned the opposite phase.
- Such breadth-first search can be performed in linear time.
- the Minimum Perturbation Problem is closely related to the well-known T- join problem.
- the -join Problem Given a graph G with weighted edges, and a subset of nodes T, ⁇ I ⁇ is even, find a minimum weight edge set A such that a node u is incident to an odd number of edges of A iff u e T.
- the Mimmum Perturbation Problem for a planar graph G is equivalent to the T-join problem in the reduced dual graph of G.
- the reduction defined above has two drawbacks. First the reduction itself can be slow, because finding all pairwise distances between nodes of Tis too time- and memory- consuming. Additionally the resulting instance of Minimum- Weight Perfect Matching Problem may have many more edges than necessary, and thus itself is too difficult to be used in practice.
- the first opportunistic reduction reduces the T-join problem to instances with biconnected graphs.
- ⁇ V, E> edge weight function w and fc .
- ⁇ V, E> has biconnected components ⁇ Vj, Ej>, ..., ⁇ V k , Eu>.
- the second opportunistic reduction eliminates nodes of degree 2 that do not belong to T.
- Fig. 11 shows an example of a transformation that uses our gadgets; the left part shows an instance of the T-join problem, and the middle part the instance of Perfect Matching that is obtained with the gadgets from Fig. 12.
- the gadget T u contains contact node (u, v). This contact node is incident to all replacements of the edge ⁇ u, v ⁇ that belong to T u .
- the remaining nodes of T u are the core nodes.
- the property of an optional contact is that it is incident to one edge only, and this edge connects this contact with a core node.
- step (2) can be implemented in linear time.
- a graph is a gadget if it has a distinguished set of core nodes, and every superset of the core nodes of even size has a perfect matching.
- An S gadget has an even number of core nodes, and a T gadget has an odd number.
- An i gadget has i non-core nodes.
- each Voronoi region contains exactly one node from T, which is the center of the Voronoi region
- each even-degree node belongs to the Voronoi region that contains the closest node in T (break ties arbitrarily).
- Figure 1 is a diagram comparing the diffraction optics of conventional and phase-shifting masks where E denotes electric field and I denotes intensity:
- Fig. 1(a) depicts the conventional mask light diffracted by two adjacent apertures constructively interferes, increasing the light intensity in the dark area of the wafer between the apertures.
- Fig. 1(b) depicts the phase-shifting mask, the phase shifter reverses the sign of the electric field, and destructive interference minimizes light intensity at the wafer in the dark area between apertures.
- Figure 2 is a block diagram depicting AltPSM style of Wang and Pati (Numerical Technologies, Inc.)
- the critical portion of the feature is created with an AltPSM mask; the second binary mask protects the critical portion and defines the non-critical portions of the feature.
- Figure 3 is a schematic diagram illustrating in Fig. 3(a) that when two vertical critical features (black rectangles) are closely spaced, their phase shifters overlap and must be assigned the same phase and in Fig. 3(b) that when the features are widely spaced, their phase shifters can be assigned phases independently.
- Figure 4 is a diagram depicting two small layouts with 4 features each that illustrate the "odd cycle" problem of phase mask layout. There is no assignment of 0 and 180 phases to the shifters, such that in Fig. 4(a) there are opposite-phase shifters on either side of each feature, and in Fig. 4(b) any shifters that overlap are assigned the same phase.
- Figure 5 (a) is a diagram illustrating the assumption that there are no conflicts between diagonal pairs (dashed edges) in a set of four features if at least three other conflicts exist.
- Figure 5 (b) is a diagram showing how to draw edges of the conflict graph without edge intersection.
- Figure 6(a) is a block diagram showing that the order induced by the segments connecting the centers of adjacent rectangles is not planar.
- Figure 6(b) is a diagram showing how to obtain a correct cyclic order on edges incident to a given node.
- Figure 7 is a plan view showing that changing the shape of interconnections can reduce the number of conflicts between features without changing positions of vias.
- Figure 8 is a flow chart showing the flow for the "one-shot" method. Note that the one-shot approach applies compaction separately in the x- and v-directions to enforce the given phase assignment.
- Figure 9 is a diagram showing rectangular features and spacing constraints between them represented as arcs.
- the critical (longest) path between leftmost and rightmost features consists of thick edges. Any conflict on the critical path cannot be relaxed without widening the layout. Thin edges are on non-critical paths and they may be broken for free.
- Figure 10 is a diagram that schematically shows how to find minimum number of conflicts to be deleted (black conflicts on Fig. 10(f)) from the set of all conflicts (dark conflicts on Fig. 10(a)). From the conflicts between features Fig. 10(a), the conflict graph is derived as depicted in Fig. 10(b). The dual graph depicted in Fig. 10(c) is constructed. The nodes of odd degree are matched using T-join in the dual graph is depicted in Fig. 10(d), and the corresponding conflict edges are determined as depicted in Fig. 10(e). Finally, the minimum set of conflicts to be deleted is determined as depicted in Fig. 10(f).
- Fig. 11 is a diagram showing an example of a transformation that uses gadgets; the left part shows an instance of the T-join problem, and the middle part the instance of Perfect Matching that is obtained with the gadgets from Fig. 12.
- Fig. 12 is a diagram depicting T-join instances and gadgets used for transformations.
- Fig. 13 is a diagram depicting an improved set of gadgets. For the basic gadget the non-zero edge weights are shown explicitly. Empty dots depict the core nodes and full dots indicate the contacts. Larger full dots indicate obligatory contacts, smaller dots indicate optional contacts.
- Fig. 14 is a diagram depicting the geometric dual graph G and Voronoi graph for T. The weight of an edge in Vor( G) is the total cost of edges in the shortest path (dashed edges) between the centers of the Voronoi regions (black vertices).
- Figure 15 is the feature graph for a layout with four critical features.
- the four feature nodes are lage and filled, the four contact nodes are small and filled, and the five shifter nodes are large and empty.
- Fig. 16 is a diagram depicting two cases of self-intersection of the feature graph. In both cases the shifter width is more than half of the feature length.
- the feature graph allows us to reduce the Phase Assignment Problem to graph bicoloring. Furthermore, the structure of the feature graph allows both types of layout modifications (feature width increase, and feature spacing increase) to be applied, along with recent advanced discrete algorithmic methods.
- Figure 15 shows the feature graph for a layout with four critical features.
- the Phase Assignment Problem has a feasible solution for L if and only if G is 2-colorable (i.e., G is bipartite); (ii) increasing the width of a feature/* in L is equivalent to deleting the corresponding feature node/from G; (iii) increasing the spacing between two features in L that have overlapping shifters is equivalent to deleting the corresponding conflict node c from G or deleting any of the edges (f, c), if, s) or (c, s), where/corresponds to either of the two features and s is the shifter node that possibly subdivides the/to-c connection.
- the feature graph is planar if the maximum width of a shifter is less than half the minimum length of a feature (see Fig. 16).
- the corresponding feature node/ e F is placed at the geometric center of the corresponding feature rectangle. 2. For every pair of overlapping shifters, the corresponding conflict node c e C is placed at the geometric center of the overlapping area of the shifters.
- each feature node/ e F to the conflict nodes representing overlaps of the shifters which are on the sides of the corresponding feature f* according to step (E) of the definition of the feature graph; is necessary, we subdivide this line with the shifter node s e S according to step (S).
- the first algorithm has been described in the dark-field embodiment and is the fast optimal algorithm for edge- deletion bipartization.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU78298/00A AU7829800A (en) | 1999-09-16 | 2000-09-18 | Optimal phase conflict removal for layout of alternating phase-shifting masks |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15426499P | 1999-09-16 | 1999-09-16 | |
| US60/154,264 | 1999-09-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2001020502A1 WO2001020502A1 (en) | 2001-03-22 |
| WO2001020502A9 true WO2001020502A9 (en) | 2001-10-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2000/025572 Ceased WO2001020502A1 (en) | 1999-09-16 | 2000-09-18 | Optimal phase conflict removal for layout of alternating phase-shifting masks |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU7829800A (en) |
| WO (1) | WO2001020502A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6832364B2 (en) | 2002-10-03 | 2004-12-14 | International Business Machines Corporation | Integrated lithographic layout optimization |
| US6901576B2 (en) | 2002-11-20 | 2005-05-31 | International Business Machines Corporation | Phase-width balanced alternating phase shift mask design |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5573890A (en) * | 1994-07-18 | 1996-11-12 | Advanced Micro Devices, Inc. | Method of optical lithography using phase shift masking |
| US5537648A (en) * | 1994-08-15 | 1996-07-16 | International Business Machines Corporation | Geometric autogeneration of "hard" phase-shift designs for VLSI |
| US5670281A (en) * | 1996-06-17 | 1997-09-23 | Industrial Technology Research Institute | Masks and methods of forming masks which avoid phase conflict problems in phase shifting masks |
| US5923562A (en) * | 1996-10-18 | 1999-07-13 | International Business Machines Corporation | Method for automatically eliminating three way intersection design conflicts in phase edge, phase shift designs |
| US5883813A (en) * | 1997-03-04 | 1999-03-16 | International Business Machines Corporation | Automatic generation of phase shift masks using net coloring |
-
2000
- 2000-09-18 AU AU78298/00A patent/AU7829800A/en not_active Abandoned
- 2000-09-18 WO PCT/US2000/025572 patent/WO2001020502A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2001020502A1 (en) | 2001-03-22 |
| AU7829800A (en) | 2001-04-17 |
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