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WO2001000522A3 - Nanometer-scale modulation - Google Patents

Nanometer-scale modulation Download PDF

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Publication number
WO2001000522A3
WO2001000522A3 PCT/DK2000/000348 DK0000348W WO0100522A3 WO 2001000522 A3 WO2001000522 A3 WO 2001000522A3 DK 0000348 W DK0000348 W DK 0000348W WO 0100522 A3 WO0100522 A3 WO 0100522A3
Authority
WO
WIPO (PCT)
Prior art keywords
crystal
modulation
interface
wafers
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DK2000/000348
Other languages
French (fr)
Other versions
WO2001000522A2 (en
Inventor
Hasin Francois De Charmoy Grey
L Robert Krarup Feidenhans
Jan Vedde
Mourits Nielsen
Paul Bedford Howes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MIKROELEKTRONIK CENTRET (MIC)
MIKROELEKTRONIK CT T MIC
Original Assignee
MIKROELEKTRONIK CENTRET (MIC)
MIKROELEKTRONIK CT T MIC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MIKROELEKTRONIK CENTRET (MIC), MIKROELEKTRONIK CT T MIC filed Critical MIKROELEKTRONIK CENTRET (MIC)
Priority to AU55223/00A priority Critical patent/AU5522300A/en
Priority to EP00940221A priority patent/EP1196350A2/en
Publication of WO2001000522A2 publication Critical patent/WO2001000522A2/en
Publication of WO2001000522A3 publication Critical patent/WO2001000522A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q40/00—Calibration, e.g. of probes
    • G01Q40/02—Calibration standards and methods of fabrication thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/813—Quantum wire structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/814—Quantum box structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8181—Structures having no potential periodicity in the vertical direction, e.g. lateral superlattices or lateral surface superlattices [LSS]
    • H10P90/1914—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

A new method to artificially modulate a crystal lattice is disclosed, where the modulation has a controlled periodicity and thickness in the range of one to several hundred nanometers. The present invention relates to the fabrication of periodically strained crystal lattices where the period and thickness of the modulated region is controlled by bonding two crystal wafers at a specified twist angle. Two polished and clean crystal wafers are placed in intimate contact at a specified twist angle and, if necessary, heated to obtain bonding between the two wafers. The two crystal lattices modulate each other, resulting in a modulation near the interface between the crystal with a periodicity that is different from that of the crystal lattices. This periodic modulation affects the electronic and structural properties of the two crystals in the vicinity of the interface. The modulation of the electronic properties leads to the formation of a highly regular quantum dot or quantum wire structures of controlled period near the crystal interface, with applications in electronics, optoelectronics and magnetic devices. The modulation of the crystal structure can be exploited for the formation of metrological standards in the 1-100 nanometer range, or gratings for diffractive optic elements with grating periods in the same range. By transferring the periodic modulation to the free surface of a crystal, it can be used as a template for further growth of periodically modulated crystalline layers by evaporation techniques.
PCT/DK2000/000348 1999-06-28 2000-06-28 Nanometer-scale modulation Ceased WO2001000522A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU55223/00A AU5522300A (en) 1999-06-28 2000-06-28 Nanometer-scale modulation
EP00940221A EP1196350A2 (en) 1999-06-28 2000-06-28 Nanometer-scale modulation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DKPA199900918 1999-06-28
DKPA199900918 1999-06-28

Publications (2)

Publication Number Publication Date
WO2001000522A2 WO2001000522A2 (en) 2001-01-04
WO2001000522A3 true WO2001000522A3 (en) 2001-05-03

Family

ID=8099011

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DK2000/000348 Ceased WO2001000522A2 (en) 1999-06-28 2000-06-28 Nanometer-scale modulation

Country Status (3)

Country Link
EP (1) EP1196350A2 (en)
AU (1) AU5522300A (en)
WO (1) WO2001000522A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6489041B2 (en) * 1999-12-09 2002-12-03 Nippon Telegraph And Telephone Corporation Magnetic body formed by quantum dot array using non-magnetic semiconductor
WO2001042540A1 (en) * 1999-12-09 2001-06-14 Cornell Research Foundation, Inc. Fabrication of periodic surface structures with nanometer-scale spacings
DE10108853C2 (en) * 2001-02-18 2003-01-16 Hahn Meitner Inst Berlin Gmbh Process for the reproducible production of a regular arrangement from nanocrystalline magnetic particles
FR2826378B1 (en) 2001-06-22 2004-10-15 Commissariat Energie Atomique UNIFORM CRYSTALLINE ORIENTATION COMPOSITE STRUCTURE AND METHOD FOR CONTROLLING THE CRYSTALLINE ORIENTATION OF SUCH A STRUCTURE
RU2212375C1 (en) * 2002-11-04 2003-09-20 Фонд развития новых медицинских технологий "АЙРЭС" Process of production of thin films with fractional structure
US7495266B2 (en) 2004-06-16 2009-02-24 Massachusetts Institute Of Technology Strained silicon-on-silicon by wafer bonding and layer transfer
FR2877662B1 (en) 2004-11-09 2007-03-02 Commissariat Energie Atomique PARTICLE NETWORK AND METHOD FOR MAKING SUCH A NETWORK
CN101326646B (en) 2005-11-01 2011-03-16 麻省理工学院 Monolithically integrated semiconductor materials and devices
US8063397B2 (en) 2006-06-28 2011-11-22 Massachusetts Institute Of Technology Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294808A (en) * 1992-10-23 1994-03-15 Cornell Research Foundation, Inc. Pseudomorphic and dislocation free heteroepitaxial structures
US5532510A (en) * 1994-12-30 1996-07-02 At&T Corp. Reverse side etching for producing layers with strain variation
US5614435A (en) * 1994-10-27 1997-03-25 The Regents Of The University Of California Quantum dot fabrication process using strained epitaxial growth
US5747180A (en) * 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
US5802232A (en) * 1996-02-16 1998-09-01 Bell Communications Research, Inc. Bonded structure with portions of differing crystallographic orientations, particularly useful as a non linear optical waveguide
US5888885A (en) * 1997-05-14 1999-03-30 Lucent Technologies Inc. Method for fabricating three-dimensional quantum dot arrays and resulting products
EP0908933A1 (en) * 1997-10-08 1999-04-14 Lucent Technologies Inc. Process for bonding crystalline substrates with different crystal lattices

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5294808A (en) * 1992-10-23 1994-03-15 Cornell Research Foundation, Inc. Pseudomorphic and dislocation free heteroepitaxial structures
US5614435A (en) * 1994-10-27 1997-03-25 The Regents Of The University Of California Quantum dot fabrication process using strained epitaxial growth
US5532510A (en) * 1994-12-30 1996-07-02 At&T Corp. Reverse side etching for producing layers with strain variation
US5747180A (en) * 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
US5802232A (en) * 1996-02-16 1998-09-01 Bell Communications Research, Inc. Bonded structure with portions of differing crystallographic orientations, particularly useful as a non linear optical waveguide
US5888885A (en) * 1997-05-14 1999-03-30 Lucent Technologies Inc. Method for fabricating three-dimensional quantum dot arrays and resulting products
EP0908933A1 (en) * 1997-10-08 1999-04-14 Lucent Technologies Inc. Process for bonding crystalline substrates with different crystal lattices

Also Published As

Publication number Publication date
WO2001000522A2 (en) 2001-01-04
EP1196350A2 (en) 2002-04-17
AU5522300A (en) 2001-01-31

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