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WO2001086038A3 - Photonic bandgap materials based on germanium - Google Patents

Photonic bandgap materials based on germanium Download PDF

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Publication number
WO2001086038A3
WO2001086038A3 PCT/CA2001/000621 CA0100621W WO0186038A3 WO 2001086038 A3 WO2001086038 A3 WO 2001086038A3 CA 0100621 W CA0100621 W CA 0100621W WO 0186038 A3 WO0186038 A3 WO 0186038A3
Authority
WO
WIPO (PCT)
Prior art keywords
germanium
template
photonic
materials
pbg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CA2001/000621
Other languages
French (fr)
Other versions
WO2001086038A2 (en
Inventor
Garcia Hernan Miguez
Sajeev John
Emmanuel Benjamin Chomski
Fernandez Ceferino Lopez
Rico Francisco Javier Meseguer
Geoffrey Alan Ozin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Consejo Superior de Investigaciones Cientificas CSIC
Universidad Politecnica de Valencia
Original Assignee
Consejo Superior de Investigaciones Cientificas CSIC
Universidad Politecnica de Valencia
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior de Investigaciones Cientificas CSIC, Universidad Politecnica de Valencia filed Critical Consejo Superior de Investigaciones Cientificas CSIC
Priority to AU2001258087A priority Critical patent/AU2001258087A1/en
Publication of WO2001086038A2 publication Critical patent/WO2001086038A2/en
Publication of WO2001086038A3 publication Critical patent/WO2001086038A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B5/00—Single-crystal growth from gels
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Dispersion Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

Photonic bandgap materials based on germanium and methods of synthesis of germanium based photonic band gap (PBG) materials. The synthesis and characterization of high quality, very large scale, face centered cubic photonic band gap (PBG) materials consisting of pure germanium, exhibiting three-dimensional PBGs in the near infrared region. This is obtained by two different methods: (1) infiltrating a self-assembling silica opal template with a germanium alkoxide which is later hydrolyzed to form germanium(IV) oxide. This compound is then reduced to germanium(0) in a hydrogen atmosphere. This cycle is repeated until the desired germanium infiltration is attained. Once the germanium guest lattice is formed, the template is removed and a germanium inverse opal is obtained. (2) Chemical vapor deposition of germanium into a self-assembling silica opal template, and subsequent removal of the template. This achievement realizes a long standing goal in photonic materials and opens a new door for complete control of radiative emission from atoms and molecules, light localization and the integration of micron scale photonic devices into a three-dimensional all-optical micro-chip.
PCT/CA2001/000621 2000-05-05 2001-05-04 Photonic bandgap materials based on germanium Ceased WO2001086038A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001258087A AU2001258087A1 (en) 2000-05-05 2001-05-04 Photonic bandgap materials based on germanium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20211500P 2000-05-05 2000-05-05
US60/202,115 2000-05-05

Publications (2)

Publication Number Publication Date
WO2001086038A2 WO2001086038A2 (en) 2001-11-15
WO2001086038A3 true WO2001086038A3 (en) 2002-05-10

Family

ID=22748551

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2001/000621 Ceased WO2001086038A2 (en) 2000-05-05 2001-05-04 Photonic bandgap materials based on germanium

Country Status (2)

Country Link
AU (1) AU2001258087A1 (en)
WO (1) WO2001086038A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101050675B1 (en) * 2002-12-13 2011-07-21 알카텔-루센트 유에스에이 인코포레이티드 Crystal growth with the help of the framework

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1261470C (en) 2001-09-14 2006-06-28 默克专利有限公司 Molded articles prepared from core/shell particles
DE10204339A1 (en) 2002-02-01 2003-08-07 Merck Patent Gmbh Strain and compression sensor
DE10227071A1 (en) 2002-06-17 2003-12-24 Merck Patent Gmbh Composite material containing core-shell particles
WO2004053205A2 (en) * 2002-07-22 2004-06-24 Massachusetts Institute Of Technolgoy Porous material formation by chemical vapor deposition onto colloidal crystal templates
US20040062700A1 (en) * 2002-09-27 2004-04-01 Hernan Miguez Mechanical stability enhancement by pore size and connectivity control in colloidal crystals by layer-by-layer growth of oxide
DE10245848A1 (en) * 2002-09-30 2004-04-01 Merck Patent Gmbh Process for the production of inverse opal structures
GB0302655D0 (en) * 2003-02-05 2003-03-12 Univ Cambridge Tech Deposition of layers on substrates
US7767903B2 (en) 2003-11-10 2010-08-03 Marshall Robert A System and method for thermal to electric conversion
US7106938B2 (en) 2004-03-16 2006-09-12 Regents Of The University Of Minnesota Self assembled three-dimensional photonic crystal
DE102004052456B4 (en) * 2004-09-30 2007-12-20 Osram Opto Semiconductors Gmbh Radiation-emitting component and method for its production

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385114A (en) * 1992-12-04 1995-01-31 Milstein; Joseph B. Photonic band gap materials and method of preparation thereof
US5600483A (en) * 1994-05-10 1997-02-04 Massachusetts Institute Of Technology Three-dimensional periodic dielectric structures having photonic bandgaps
WO1999009439A1 (en) * 1997-08-18 1999-02-25 Isis Innovation Limited Photonic crystal materials and a method of preparation thereof
WO2000010040A1 (en) * 1998-08-11 2000-02-24 Massachusetts Institute Of Technology Composite photonic crystals
WO2000021905A1 (en) * 1998-10-13 2000-04-20 Alliedsignal Inc. Three dimensionally periodic structural assemblies on nanometer and longer scales
WO2001055484A2 (en) * 2000-01-28 2001-08-02 The Governing Council Of The University Of Toronto Photonic bandgap materials based on silicon

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385114A (en) * 1992-12-04 1995-01-31 Milstein; Joseph B. Photonic band gap materials and method of preparation thereof
US5600483A (en) * 1994-05-10 1997-02-04 Massachusetts Institute Of Technology Three-dimensional periodic dielectric structures having photonic bandgaps
WO1999009439A1 (en) * 1997-08-18 1999-02-25 Isis Innovation Limited Photonic crystal materials and a method of preparation thereof
WO2000010040A1 (en) * 1998-08-11 2000-02-24 Massachusetts Institute Of Technology Composite photonic crystals
WO2000021905A1 (en) * 1998-10-13 2000-04-20 Alliedsignal Inc. Three dimensionally periodic structural assemblies on nanometer and longer scales
WO2001055484A2 (en) * 2000-01-28 2001-08-02 The Governing Council Of The University Of Toronto Photonic bandgap materials based on silicon

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BUSCH K ET AL: "Photonic band gap formation in certain self-organizing systems", PHYSICAL REVIEW E. STATISTICAL PHYSICS, PLASMAS, FLUIDS, AND RELATED INTERDISCIPLINARY TOPICS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 58, no. 3, September 1998 (1998-09-01), pages 3896 - 3908, XP002130697, ISSN: 1063-651X *
JOHN S ET AL: "PHOTONIC BANDGAP FORMATION AND TUNABILITY IN CERTAIN SELF-ORGANIZING SYSTEMS", JOURNAL OF LIGHTWAVE TECHNOLOGY, IEEE. NEW YORK, US, vol. 17, no. 11, November 1999 (1999-11-01), pages 1931 - 1943, XP001033253, ISSN: 0733-8724 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101050675B1 (en) * 2002-12-13 2011-07-21 알카텔-루센트 유에스에이 인코포레이티드 Crystal growth with the help of the framework

Also Published As

Publication number Publication date
WO2001086038A2 (en) 2001-11-15
AU2001258087A1 (en) 2001-11-20

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