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WO2001078124A1 - Conditionneur et procede de conditionnement pour tampon de polissage d'un appareil de polissage chimico-mecanique - Google Patents

Conditionneur et procede de conditionnement pour tampon de polissage d'un appareil de polissage chimico-mecanique Download PDF

Info

Publication number
WO2001078124A1
WO2001078124A1 PCT/KR2001/000586 KR0100586W WO0178124A1 WO 2001078124 A1 WO2001078124 A1 WO 2001078124A1 KR 0100586 W KR0100586 W KR 0100586W WO 0178124 A1 WO0178124 A1 WO 0178124A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
conditioner
polishing pad
pad
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2001/000586
Other languages
English (en)
Inventor
Nam-Chul Paek
Kyu-Hong Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEMICONTECH Corp
Genitech Co Ltd
Original Assignee
SEMICONTECH Corp
Genitech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEMICONTECH Corp, Genitech Co Ltd filed Critical SEMICONTECH Corp
Publication of WO2001078124A1 publication Critical patent/WO2001078124A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H10P50/00—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor

Definitions

  • the present invention relates to a conditioner and a conditioning method of a chemical mechanical polishing apparatus for flattening a semiconductor wafer, and more particularly to a conditioner of a chemical and mechanical polishing apparatus which is mounted to a polishing head to efficiently improve the surface roughness of a polishing pad and can be moved upwardly and downwardly independently and a conditioning method using the same.
  • the number of the processes for masking, etching, forming an insulating layer, and forming a metal wire to manufacture a semiconductor wafer is increased.
  • one surface of the semiconductor wafer should be flattened.
  • the surface of the wafer should be highly flattened. Therefore, a device for polishing and flattening the surface of the wafer is needed.
  • a flattening technology which uses a chemical mechanical polishing (hereinafter, referred to as CMP) device is widely used.
  • a polishing device comprises a polishing head to which a wafer is mounted, a polishing head which makes contact with a polishing surface of a wafer, a platen to which a polishing pad is attached, and a device for supplying a polishing liquid between the polishing pad and the polishing surface of a wafer.
  • the polishing pad makes contact with the wafer by applying a pressure to the wafer and a polishing liquid is supplied therebetween, and the wafer is polished by revolving the polishing head or rotating the platen.
  • the polishing head comprises a surface foam.
  • the surface foam supplies the polishing liquid to the front surface of the wafer and acts as a passage for discharging the reactants generated by the surface reaction of the polishing liquid and the wafer.
  • the dry foam generating material pad in which foams are formed on the surface thereof is not easily removed after the initial polishing process is proceeded, and influences the next processes.
  • the polishing liquid particles and the reactants exist in the foams, and the glazing phenomenon is generated on the surface of the pad.
  • the pad is deformed by the load applied to the wafer, and the size of the deformation is determined by the applied load and the property of the pad. If the pad is deformed, the surface roughness of the pad is decreased and the contacting area between the water and the pad is increased and the pressure applied to the polishing surface is reduced.
  • the supply passage of the polishing liquid is reduced and thus the polishing speed is reduced. Therefore, a method for improving the life of the pad and the property of the pad to guarantee the reproduction of the polishing speed is needed.
  • a pad conditioner is provided and the pad conditioning which processes the surface of the pad is performed.
  • the pad conditioning irrelevant to the kind and the property of the polishing pad has been performed and the reproduction of the polishing speed is not sufficiently guaranteed.
  • the technology uses the flexible membrane, as the pressure in the cavity is varied, the flexible is protruded to the outside of the cavity or is introduced into the cavity, thereby destroying the flexible membrane.
  • one object of the present invention is to provide a pad conditioner and a conditioning method which can perform a pad conditioning which is suitable for the kind, the property, and the state of various polishing pads .
  • Another object of the present invention is to provide a pad conditioner which has a strong durability.
  • the conditioner according to the present invention is applied to a conventional chemical mechanical polishing device which includes a polishing pad for mounting a semiconductor wafer, a polishing pad for polishing a polishing surface of the wafer, a platen to which the polishing pad is attached, and a device for supplying the polishing liquid between the polishing pad and the polishing surface of the wafer.
  • the conditioner according to the present invention includes a conditioner base for determining the position of the conditioner with respect to the polishing pad, a conditioner guide which guides the movement of the conditioner base and forms a cavity together with the conditioner base, and an air supplying means which supplies the amount of the air which is varied in the cavity to transfer the varying pneumatic pressure to the conditioner base.
  • the conditioner according to the present invention is mounted to the polishing head.
  • the conditioner can be moved with respect to the polishing head independently of the polishing head.
  • the conditioning method according to the present invention uses the conditioner according to the present invention, and comprises the steps of mounting the wafer to the polishing head, approaching the platen to which the polishing pad is attached towards the wafer, transferring the varying pneumatic pressure to the conditioner base by using the air supplying means of the conditioner and making the conditioner contact with the polishing pad, and moving the polishing head to vary the position of the polishing head with respect to the platen.
  • the contacting step of the conditioner can be proceeded during the polishing process or after the polishing process .
  • FIG. 1 is a cross-sectional view for showing a CMP device to which a conditioner according to a preferred embodiment of the present invention is mounted.
  • a semiconductor wafer 105 to be polished is attached to the lower portion of a polishing head 100.
  • a polishing pad 122 for polishing the wafer 105 is positioned on a platen 120.
  • a slurry 118 is supplied between the wafer 105 and the polishing pad 122.
  • a conditioner 110 which comprises a conditioner guide 112, a conditioner base 114, and a pneumatic line connecting section 116 is mounted to the polishing head 100.
  • the air introduced in the arrow direction through the pneumatic line connecting section 116 is moved to a space C between the conditioner guide 112 and the conditioner base 114, and the position of the conditioner base 114 is variably regulated through the change of the pressure.
  • the conditioner 110 is mounted to the polishing head 100, and is moved upwardly and downwardly by the pneumatic pressure with respect to the polishing pad 122.
  • a portion to which a conditioning part which makes contact with the polishing pad comprises the flexible membrane and the conditioning strength is regulated through the inflating and the shrinking of the flexible membrane.
  • the conditioner 110 itself is moved upwardly and downwardly to regulate the conditioning strength. Therefore, the damage of the flexible membrane is prevented.
  • a semiconductor wafer 105 is absorbed and fixed to the lower portion of the polishing head 100 by a loading device (not shown) . Thereafter, a platen 120 to which the polishing pad 122 is attached is vertically raised, and the polishing pad 122 makes contact with the wafer 105. Thereafter, the conditioner 110 mounted to the polishing head 100 is moved downwardly by the pneumatic pressure and makes contact with the polishing pad 122. In the polishing step, the polishing head 100 is revolved or the platen 120 is rotated to polish the wafer 105. The conditioner 110 applies the pressure with a pneumatic control mechanism to apply a contacting force according to the kind and the surface property of the polishing pad.
  • the polishing pad 122 can be conditioned during or after the polishing of the wafer 105 by using the conditioner 110 which can be moved upwardly and downwardly.
  • the conditioner and the conditioning method of the present invention since the conditioner has a pneumatic control mechanism, the polishing pad is conditioned by applying a pressure suitably for the kind and the property of the polishing pad. Therefore, the lifer and the property of the polishing pad is improved, and the reproduction of the polishing speed is guaranteed. Further, since the conditioner itself is moved, the damage of the flexible membrane is prevented.
  • FIG. 1 is a cross-sectional view for showing a CMP device to which a conditioner according to a preferred embodiment of the present invention is mounted.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un conditionneur et un procédé de conditionnement destinés à un tampon de polissage présentant différents types, états et propriétés au cours d'un polissage chimico-mécanique. Ce conditionneur se déplace indépendamment vers le haut et vers le bas sous l'influence d'un mécanisme pneumatique. Il est installé directement dans une tête de polissage et présente une forme annulaire. Par ailleurs, il est utilisé in situ. Ainsi, il permet d'augmenter efficacement la rugosité de surface du tampon de polissage, et de conditionner efficacement un tampon de polissage à l'aide d'une pression croissante. Par conséquent, il garantit une répétabilité de la vitesse de polissage, augmente la durée de vie et améliore les caractéristiques d'un tampon de polissage, la totalité de la surface dudit tampon étant censée rester uniforme.
PCT/KR2001/000586 2000-04-12 2001-04-09 Conditionneur et procede de conditionnement pour tampon de polissage d'un appareil de polissage chimico-mecanique Ceased WO2001078124A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2000-19263 2000-04-12
KR1020000019263A KR100332363B1 (ko) 2000-04-12 2000-04-12 화학기계적 연마장치의 연마패드를 위한 컨디셔너와 그컨디셔닝 방법

Publications (1)

Publication Number Publication Date
WO2001078124A1 true WO2001078124A1 (fr) 2001-10-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2001/000586 Ceased WO2001078124A1 (fr) 2000-04-12 2001-04-09 Conditionneur et procede de conditionnement pour tampon de polissage d'un appareil de polissage chimico-mecanique

Country Status (2)

Country Link
KR (1) KR100332363B1 (fr)
WO (1) WO2001078124A1 (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727169B1 (en) 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US7438760B2 (en) 2005-02-04 2008-10-21 Asm America, Inc. Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
US7655543B2 (en) 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US7863163B2 (en) 2005-12-22 2011-01-04 Asm America, Inc. Epitaxial deposition of doped semiconductor materials
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US8921205B2 (en) 2002-08-14 2014-12-30 Asm America, Inc. Deposition of amorphous silicon-containing films
CN108161711A (zh) * 2017-12-28 2018-06-15 德淮半导体有限公司 晶圆研磨装置及研磨头
CN113319734A (zh) * 2021-07-06 2021-08-31 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 化学抛光装置及其方法
CN116061074A (zh) * 2022-12-30 2023-05-05 上海合晶硅材料股份有限公司 化学机械抛光机

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100744257B1 (ko) 2005-12-28 2007-07-30 동부일렉트로닉스 주식회사 씨엠피장치의 캐리어헤드

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09141550A (ja) * 1995-11-22 1997-06-03 Sony Corp 薄板状基板の研磨方法及びそのための研磨装置
JPH1058315A (ja) * 1996-08-20 1998-03-03 Sony Corp 研磨装置及び研磨方法
JP2000153448A (ja) * 1998-11-19 2000-06-06 Toshiba Mach Co Ltd 平面研磨方法
JP2000354958A (ja) * 1999-06-14 2000-12-26 Toshiba Corp ワーク研磨装置、ワーク研磨方法及び半導体装置製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09141550A (ja) * 1995-11-22 1997-06-03 Sony Corp 薄板状基板の研磨方法及びそのための研磨装置
JPH1058315A (ja) * 1996-08-20 1998-03-03 Sony Corp 研磨装置及び研磨方法
JP2000153448A (ja) * 1998-11-19 2000-06-06 Toshiba Mach Co Ltd 平面研磨方法
JP2000354958A (ja) * 1999-06-14 2000-12-26 Toshiba Corp ワーク研磨装置、ワーク研磨方法及び半導体装置製造方法

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727169B1 (en) 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US7102235B2 (en) 1999-10-15 2006-09-05 Asm International N.V. Conformal lining layers for damascene metallization
US8921205B2 (en) 2002-08-14 2014-12-30 Asm America, Inc. Deposition of amorphous silicon-containing films
US7687383B2 (en) 2005-02-04 2010-03-30 Asm America, Inc. Methods of depositing electrically active doped crystalline Si-containing films
US7438760B2 (en) 2005-02-04 2008-10-21 Asm America, Inc. Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
US9190515B2 (en) 2005-02-04 2015-11-17 Asm America, Inc. Structure comprises an As-deposited doped single crystalline Si-containing film
US7816236B2 (en) 2005-02-04 2010-10-19 Asm America Inc. Selective deposition of silicon-containing films
US7863163B2 (en) 2005-12-22 2011-01-04 Asm America, Inc. Epitaxial deposition of doped semiconductor materials
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US9312131B2 (en) 2006-06-07 2016-04-12 Asm America, Inc. Selective epitaxial formation of semiconductive films
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US7897491B2 (en) 2007-12-21 2011-03-01 Asm America, Inc. Separate injection of reactive species in selective formation of films
US7655543B2 (en) 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
CN108161711A (zh) * 2017-12-28 2018-06-15 德淮半导体有限公司 晶圆研磨装置及研磨头
CN113319734A (zh) * 2021-07-06 2021-08-31 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 化学抛光装置及其方法
CN113319734B (zh) * 2021-07-06 2023-05-26 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 化学抛光装置及其方法
CN116061074A (zh) * 2022-12-30 2023-05-05 上海合晶硅材料股份有限公司 化学机械抛光机

Also Published As

Publication number Publication date
KR20010095842A (ko) 2001-11-07
KR100332363B1 (ko) 2002-04-12

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