[go: up one dir, main page]

WO2001078152A3 - Dispositif semi-conducteur du type diode schottky - Google Patents

Dispositif semi-conducteur du type diode schottky Download PDF

Info

Publication number
WO2001078152A3
WO2001078152A3 PCT/FR2001/001101 FR0101101W WO0178152A3 WO 2001078152 A3 WO2001078152 A3 WO 2001078152A3 FR 0101101 W FR0101101 W FR 0101101W WO 0178152 A3 WO0178152 A3 WO 0178152A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
schottky
semiconductor device
substrate
diode semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/FR2001/001101
Other languages
English (en)
Other versions
WO2001078152A2 (fr
Inventor
Pierre Di Rossel
Frederic Morancho
Nathalie Cezac
Henri Tranduc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to US10/239,629 priority Critical patent/US20040046224A1/en
Priority to EP01923789A priority patent/EP1273046A2/fr
Priority to JP2001574907A priority patent/JP2003530700A/ja
Priority to AU2001250477A priority patent/AU2001250477A1/en
Publication of WO2001078152A2 publication Critical patent/WO2001078152A2/fr
Publication of WO2001078152A3 publication Critical patent/WO2001078152A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H10D62/054—Forming charge compensation regions, e.g. superjunctions by high energy implantations in bulk semiconductor bodies, e.g. forming pillars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

Dispositif semi-conducteur du type diode Schottky, comprenant un substrat constitué de première (2) et deuxième (3) couches semi-conductrices d'un même type de conduction superposées dans ledit substrat, la deuxième couche (3) étant plus fortement dopée que la première (2), ledit substrat présentant des première (4) et deuxième (5) surfaces principales en contact avec des première (8) et deuxième (6) électrodes, une barrière de Schottky étant formée entre ladite première électrode (8) et ladite première couche, caractérisé en ce que la pluralité d'îlots (9) de type de conduction opposé à celui de ladite première couche (2) sont disposés en lits espacés dans l'épaisseur de ladite couche (2).
PCT/FR2001/001101 2000-04-10 2001-04-10 Dispositif semi-conducteur du type diode schottky Ceased WO2001078152A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/239,629 US20040046224A1 (en) 2000-04-10 2001-04-10 Schottky-diode semiconductor device
EP01923789A EP1273046A2 (fr) 2000-04-10 2001-04-10 Dispositif semi-conducteur du type diode schottky
JP2001574907A JP2003530700A (ja) 2000-04-10 2001-04-10 ショットキーダイオードタイプの半導体装置及びその使用方法
AU2001250477A AU2001250477A1 (en) 2000-04-10 2001-04-10 Schottky-diode semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0004583A FR2807569B1 (fr) 2000-04-10 2000-04-10 Perfectionnement apportes aux diodes schottky
FR00/04583 2000-04-10

Publications (2)

Publication Number Publication Date
WO2001078152A2 WO2001078152A2 (fr) 2001-10-18
WO2001078152A3 true WO2001078152A3 (fr) 2002-02-07

Family

ID=8849086

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2001/001101 Ceased WO2001078152A2 (fr) 2000-04-10 2001-04-10 Dispositif semi-conducteur du type diode schottky

Country Status (7)

Country Link
US (1) US20040046224A1 (fr)
EP (1) EP1273046A2 (fr)
JP (1) JP2003530700A (fr)
KR (1) KR20030011820A (fr)
AU (1) AU2001250477A1 (fr)
FR (1) FR2807569B1 (fr)
WO (1) WO2001078152A2 (fr)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4198469B2 (ja) * 2001-04-11 2008-12-17 シリコン・セミコンダクター・コーポレイション パワーデバイスとその製造方法
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7238976B1 (en) * 2004-06-15 2007-07-03 Qspeed Semiconductor Inc. Schottky barrier rectifier and method of manufacturing the same
EP1790013A1 (fr) 2004-08-31 2007-05-30 Freescale Semiconductor, Inc. Dispositif de puissance a semi-conducteurs
US7671439B2 (en) * 2005-02-11 2010-03-02 Alpha & Omega Semiconductor, Ltd. Junction barrier Schottky (JBS) with floating islands
US7737522B2 (en) * 2005-02-11 2010-06-15 Alpha & Omega Semiconductor, Ltd. Trench junction barrier controlled Schottky device with top and bottom doped regions for enhancing forward current in a vertical direction
DE102005046706B4 (de) 2005-09-29 2007-07-05 Siced Electronics Development Gmbh & Co. Kg JBS-SiC-Halbleiterbauelement
JP5351519B2 (ja) * 2005-12-27 2013-11-27 パワー・インテグレーションズ・インコーポレーテッド 高速回復整流器構造体の装置および方法
US7633135B2 (en) * 2007-07-22 2009-12-15 Alpha & Omega Semiconductor, Ltd. Bottom anode Schottky diode structure and method
US7560355B2 (en) * 2006-10-24 2009-07-14 Vishay General Semiconductor Llc Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same
DE102007009227B4 (de) 2007-02-26 2009-01-02 Infineon Technologies Ag Halbleiterbauelement mit gleichrichtenden Übergängen sowie Herstellungsverfahren zur Herstellung desselben
US8368166B2 (en) * 2007-05-30 2013-02-05 Intersil Americas Inc. Junction barrier Schottky diode
TW200847448A (en) * 2007-05-30 2008-12-01 Intersil Inc Junction barrier schottky diode
US7750426B2 (en) 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
JP2007311822A (ja) * 2007-07-23 2007-11-29 Toshiba Corp ショットキーバリヤダイオード
JP2009076866A (ja) * 2007-08-31 2009-04-09 Sumitomo Electric Ind Ltd ショットキーバリアダイオード
US9102962B2 (en) * 2007-10-16 2015-08-11 Shiu Nan Chen Production method for solid cultured active mushroom mycelium and fruit-body metabolites (AMFM) products thereof
US8212327B2 (en) * 2008-03-06 2012-07-03 Sionyx, Inc. High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme
US7851881B1 (en) * 2008-03-21 2010-12-14 Microsemi Corporation Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode
US8106487B2 (en) * 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
EP2583312A2 (fr) 2010-06-18 2013-04-24 Sionyx, Inc. Dispositifs photosensibles à grande vitesse et procédés associés
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20130016203A1 (en) 2011-07-13 2013-01-17 Saylor Stephen D Biometric imaging devices and associated methods
US8362585B1 (en) 2011-07-15 2013-01-29 Alpha & Omega Semiconductor, Inc. Junction barrier Schottky diode with enforced upper contact structure and method for robust packaging
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
WO2014151093A1 (fr) 2013-03-15 2014-09-25 Sionyx, Inc. Imagerie tridimensionnelle utilisant des dispositifs imageurs empilés et procédés associés
JP2014236171A (ja) * 2013-06-05 2014-12-15 ローム株式会社 半導体装置およびその製造方法
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
US9070790B2 (en) * 2013-08-29 2015-06-30 Infineon Technologies Ag Vertical semiconductor device and method of manufacturing thereof
US9704949B1 (en) * 2016-06-30 2017-07-11 General Electric Company Active area designs for charge-balanced diodes
CN116093164B (zh) * 2023-04-07 2023-07-11 深圳市晶扬电子有限公司 一种带有浮岛型保护环的高压肖特基二极管

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2361750A1 (fr) * 1976-08-09 1978-03-10 Philips Nv Dispositif semi-conducteur a jonction redresseuse metal-semi-conducteur
JPH06275816A (ja) * 1993-03-18 1994-09-30 Shindengen Electric Mfg Co Ltd ショットキバリヤダイオ−ド
US5747841A (en) * 1994-12-20 1998-05-05 U.S. Philips Corporation Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement
JPH10117003A (ja) * 1996-10-14 1998-05-06 Hitachi Ltd 定電圧ダイオード及びその製造方法
WO1999053550A1 (fr) * 1998-04-08 1999-10-21 Siemens Aktiengesellschaft Element de terminaison marginal haute tension pour structures de type planar

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4837227B1 (fr) * 1968-12-20 1973-11-09
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
DE19943143B4 (de) * 1999-09-09 2008-04-24 Infineon Technologies Ag Halbleiterbauelement für hohe Sperrspannungen bei gleichzeitig niedrigem Einschaltwiderstand und Verfahren zu dessen Herstellung
DE10061528C1 (de) * 2000-12-11 2002-07-25 Infineon Technologies Ag Mittels Feldeffekt steuerbares Halbleiterbauelement

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2361750A1 (fr) * 1976-08-09 1978-03-10 Philips Nv Dispositif semi-conducteur a jonction redresseuse metal-semi-conducteur
JPH06275816A (ja) * 1993-03-18 1994-09-30 Shindengen Electric Mfg Co Ltd ショットキバリヤダイオ−ド
US5747841A (en) * 1994-12-20 1998-05-05 U.S. Philips Corporation Circuit arrangement, and junction field effect transistor suitable for use in such a circuit arrangement
JPH10117003A (ja) * 1996-10-14 1998-05-06 Hitachi Ltd 定電圧ダイオード及びその製造方法
WO1999053550A1 (fr) * 1998-04-08 1999-10-21 Siemens Aktiengesellschaft Element de terminaison marginal haute tension pour structures de type planar

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 684 (E - 1650) 22 December 1994 (1994-12-22) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 10 31 August 1998 (1998-08-31) *

Also Published As

Publication number Publication date
KR20030011820A (ko) 2003-02-11
WO2001078152A2 (fr) 2001-10-18
FR2807569B1 (fr) 2004-08-27
US20040046224A1 (en) 2004-03-11
AU2001250477A1 (en) 2001-10-23
FR2807569A1 (fr) 2001-10-12
JP2003530700A (ja) 2003-10-14
EP1273046A2 (fr) 2003-01-08

Similar Documents

Publication Publication Date Title
WO2001078152A3 (fr) Dispositif semi-conducteur du type diode schottky
TW200419780A (en) Semiconductor device, dynamic semiconductor memory, and manufacturing method of semiconductor device
WO2004059809A3 (fr) Procedes de realisation de dispositifs semi-conducteurs a mesas semi-conducteurs et couches de contact a auto-alignement et dispositifs connexes
EP0813246A3 (fr) Dispositif semi-conducteur comprenant deux substrats semi-conducteurs
TW343388B (en) Semiconductor device
EP1986240A3 (fr) Dispositif à semi-conducteurs et procédé de fabrication de dispositif à semi-conducteurs
EP2302663A3 (fr) Procédé de fabrication d'un condensateur MIM
WO1999045551A3 (fr) Dispositif multicouche en polymere conducteur
JP2003520417A5 (fr)
WO2004100276A3 (fr) Composants electroluminescents possedant des contacts electriques coplanaires et contigus a une surface de substrat opposee a une zone active et leurs procedes de fabrication
WO2006011632A3 (fr) Dispositif semi-conducteur comprenant une couche conductrice enfouie dans une ouverture, et procede de fabrication de ce dispositif
WO2007053339A3 (fr) Procede pour former une structure a semi-conducteurs et sa structure
WO2005004194A3 (fr) Diodes redresseuses
KR910008851A (ko) 반도체 장치 및 제조방법
WO2003049194A1 (fr) Ligne fonctionnelle et reseau de transistor utilisant celle-ci
WO2002029890A3 (fr) Dispositifs a semiconducteurs a puces superposees et procedes pour former ces dispositifs
EP1372231A3 (fr) Laser à semiconducteurs
TW351861B (en) Semiconductor device and manufacturing process thereof
KR900008668A (ko) 반도체 장치
WO2006127225A3 (fr) Dispositif a semi-conducteurs comprenant une couche d'interface dielectrique a superposition
JPH11233795A5 (fr)
EP1148543A3 (fr) Dispositif semiconducteur et méthode de sa farbication
JPH1070250A5 (fr)
JPH11121783A5 (ja) 半導体装置、光検出装置およびその製造方法
TW200721486A (en) Field effect transistor and method of manufacturing the same

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

WWE Wipo information: entry into national phase

Ref document number: 2001923789

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020027013518

Country of ref document: KR

ENP Entry into the national phase

Ref country code: JP

Ref document number: 2001 574907

Kind code of ref document: A

Format of ref document f/p: F

WWP Wipo information: published in national office

Ref document number: 2001923789

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020027013518

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 10239629

Country of ref document: US

WWW Wipo information: withdrawn in national office

Ref document number: 2001923789

Country of ref document: EP