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WO2001075929A1 - Microscope electronique a balayage - Google Patents

Microscope electronique a balayage Download PDF

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Publication number
WO2001075929A1
WO2001075929A1 PCT/JP2000/002064 JP0002064W WO0175929A1 WO 2001075929 A1 WO2001075929 A1 WO 2001075929A1 JP 0002064 W JP0002064 W JP 0002064W WO 0175929 A1 WO0175929 A1 WO 0175929A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrons
electron microscope
scanning electron
deflector
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2000/002064
Other languages
English (en)
French (fr)
Inventor
Hideo Todokoro
Makoto Ezumi
Yoichi Ose
Naomasa Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to KR10-2002-7010591A priority Critical patent/KR100494300B1/ko
Priority to JP2001573514A priority patent/JP4069624B2/ja
Priority to DE60042758T priority patent/DE60042758D1/de
Priority to EP00913013A priority patent/EP1271603B1/en
Priority to US10/069,571 priority patent/US6646262B1/en
Priority to EP09005647A priority patent/EP2088615B1/en
Priority to PCT/JP2000/002064 priority patent/WO2001075929A1/ja
Publication of WO2001075929A1 publication Critical patent/WO2001075929A1/ja
Anticipated expiration legal-status Critical
Priority to US11/802,738 priority patent/US7399966B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2448—Secondary particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24485—Energy spectrometers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
PCT/JP2000/002064 2000-03-31 2000-03-31 Microscope electronique a balayage Ceased WO2001075929A1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR10-2002-7010591A KR100494300B1 (ko) 2000-03-31 2000-03-31 주사 전자현미경
JP2001573514A JP4069624B2 (ja) 2000-03-31 2000-03-31 走査電子顕微鏡
DE60042758T DE60042758D1 (de) 2000-03-31 2000-03-31 Abtast-elektronenmikroskop
EP00913013A EP1271603B1 (en) 2000-03-31 2000-03-31 Scanning electron microscope
US10/069,571 US6646262B1 (en) 2000-03-31 2000-03-31 Scanning electron microscope
EP09005647A EP2088615B1 (en) 2000-03-31 2000-03-31 Charged particle beam device
PCT/JP2000/002064 WO2001075929A1 (fr) 2000-03-31 2000-03-31 Microscope electronique a balayage
US11/802,738 US7399966B2 (en) 2000-03-31 2007-05-24 Scanning electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/002064 WO2001075929A1 (fr) 2000-03-31 2000-03-31 Microscope electronique a balayage

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10069571 A-371-Of-International 2000-03-31
US10/643,892 Continuation US6847038B2 (en) 2000-03-31 2003-08-20 Scanning electron microscope

Publications (1)

Publication Number Publication Date
WO2001075929A1 true WO2001075929A1 (fr) 2001-10-11

Family

ID=11735860

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/002064 Ceased WO2001075929A1 (fr) 2000-03-31 2000-03-31 Microscope electronique a balayage

Country Status (6)

Country Link
US (1) US6646262B1 (ja)
EP (2) EP2088615B1 (ja)
JP (1) JP4069624B2 (ja)
KR (1) KR100494300B1 (ja)
DE (1) DE60042758D1 (ja)
WO (1) WO2001075929A1 (ja)

Cited By (25)

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JP2003303568A (ja) * 2002-04-11 2003-10-24 Keyence Corp 電子顕微鏡のチャージアップ防止方法および電子顕微鏡
JP2004134374A (ja) * 2002-07-09 2004-04-30 Leo Elektronenmikroskopie Gmbh 半導体装置の電子顕微鏡による観察方法およびその装置
JP2004221089A (ja) * 2003-01-16 2004-08-05 Leo Elektronenmikroskopie Gmbh 電子ビーム装置及び検出装置
JP2006080061A (ja) * 2004-09-07 2006-03-23 Kla-Tencor Technologies Corp 電子ビーム暗視野像形成のための装置および方法
JP2006114426A (ja) * 2004-10-18 2006-04-27 Hitachi High-Technologies Corp 試料観察方法及び電子顕微鏡
JP2006261111A (ja) * 2005-03-17 2006-09-28 Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh 分析システムおよび荷電粒子ビームデバイス
JP2008159568A (ja) * 2006-09-19 2008-07-10 Carl Zeiss Nts Gmbh 微小化構造を有する物体を検査及び加工するための電子顕微鏡、並びに、当該物体の製造方法
JP2008257914A (ja) * 2007-04-02 2008-10-23 Jeol Ltd ビーム装置
JP2009110788A (ja) * 2007-10-30 2009-05-21 Jeol Ltd 透過形電子顕微鏡及びその動作方法
WO2011092757A1 (ja) * 2010-01-27 2011-08-04 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP2012003902A (ja) * 2010-06-15 2012-01-05 Hitachi High-Technologies Corp 走査型電子顕微鏡及びその制御方法
WO2012081428A1 (ja) * 2010-12-16 2012-06-21 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及びそれを用いた測長方法
JP2012199052A (ja) * 2011-03-22 2012-10-18 Jeol Ltd 電子検出機構及びそれを備えた荷電粒子線装置
DE112011100306T5 (de) 2010-01-20 2012-10-25 Hitachi High-Technologies Corporation Ladungsteilchenstrahlvorrichtung
JP2013033671A (ja) * 2011-08-03 2013-02-14 Hitachi High-Technologies Corp 荷電粒子線装置
US8455823B2 (en) 2008-12-02 2013-06-04 Hitachi High-Technologies Corporation Charged particle beam device
JP2014203603A (ja) * 2013-04-03 2014-10-27 株式会社日立ハイテクノロジーズ 荷電粒子線装置およびそれを用いた計測方法
JP2014209482A (ja) * 2013-04-15 2014-11-06 カール ツァイス マイクロスコーピー ゲーエムベーハーＣａｒｌ Ｚｅｉｓｓ Ｍｉｃｒｏｓｃｏｐｙ ＧｍｂＨ エネルギー選択的検出器系を有する走査型粒子顕微鏡
WO2015016040A1 (ja) * 2013-08-02 2015-02-05 株式会社 日立ハイテクノロジーズ 走査電子顕微鏡
US9202667B2 (en) 2009-02-19 2015-12-01 Hitachi High-Technologies Corporation Charged particle radiation device with bandpass detection
WO2018134870A1 (ja) * 2017-01-17 2018-07-26 株式会社日立ハイテクノロジーズ 走査電子顕微鏡および走査電子顕微鏡による試料観察方法
US10943762B2 (en) 2018-02-08 2021-03-09 Hitachi High-Tech Corporation Inspection system, image processing device and inspection method
WO2022064628A1 (ja) * 2020-09-25 2022-03-31 株式会社日立ハイテク 電子顕微鏡
US12142455B2 (en) 2020-04-10 2024-11-12 Asml Netherlands B.V. Charged particle beam apparatus with multiple detectors and methods for imaging
US12142457B2 (en) 2019-10-31 2024-11-12 Hitachi High-Tech Corporation Charged particle beam device

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US6847038B2 (en) * 2002-07-15 2005-01-25 Hitachi, Ltd. Scanning electron microscope
JP2003331770A (ja) * 2002-05-15 2003-11-21 Seiko Instruments Inc 電子線装置
US7081625B2 (en) * 2002-11-06 2006-07-25 Hitachi High-Technologies Corporation Charged particle beam apparatus
PL207199B1 (pl) * 2003-04-17 2010-11-30 Politechnika Wroclawska Układ detekcyjny elektronów wtórnych do skaningowego mikroskopu elektronowego
US7847267B2 (en) * 2003-07-30 2010-12-07 Applied Materials Israel, Ltd. Scanning electron microscope having multiple detectors and a method for multiple detector based imaging
PL207238B1 (pl) * 2003-10-14 2010-11-30 Politechnika Wroclawska Układ detekcyjny elektronów wtórnych i wstecznie rozproszonych do skaningowego mikroskopu elektronowego
EP1605492B1 (en) * 2004-06-11 2015-11-18 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with retarding field analyzer
US7019292B1 (en) * 2004-06-15 2006-03-28 Kla-Tencor Technologies Corporation E-beam detection of defective contacts/vias with flooding and energy filter
US7135678B2 (en) * 2004-07-09 2006-11-14 Credence Systems Corporation Charged particle guide
JP4636897B2 (ja) * 2005-02-18 2011-02-23 株式会社日立ハイテクサイエンスシステムズ 走査電子顕微鏡
US20080296496A1 (en) * 2007-05-30 2008-12-04 Hermes Microvision, Inc. (Taiwan) Method and apparatus of wafer surface potential regulation
JP4451475B2 (ja) * 2007-10-03 2010-04-14 株式会社荏原製作所 試料面観察方法
WO2010148423A1 (en) * 2009-06-22 2010-12-29 The University Of Western Australia An imaging detector for a scanning charged particle microscope
WO2011005469A2 (en) * 2009-06-24 2011-01-13 Carl Zeiss Nts, Llc Charged particle detectors
US9336981B2 (en) * 2010-04-09 2016-05-10 Applied Materials Israel Ltd. Charged particle detection system and multi-beamlet inspection system
JP5426497B2 (ja) * 2010-08-09 2014-02-26 株式会社アドバンテスト パターン測定装置及びパターン測定方法
JP5584159B2 (ja) 2011-03-24 2014-09-03 株式会社日立ハイテクノロジーズ 荷電粒子線装置及びパターン測定方法
JP5622779B2 (ja) * 2012-03-26 2014-11-12 株式会社東芝 試料分析装置および試料分析方法
WO2013150847A1 (ja) 2012-04-03 2013-10-10 株式会社 日立ハイテクノロジーズ 荷電粒子線装置
KR102234659B1 (ko) 2013-10-29 2021-04-05 삼성전자주식회사 고에너지 전자 빔을 이용하여 인-셀 오버레이 오프셋을 측정할 수 있는 sem 장치와 그 방법
CN106458577A (zh) * 2014-03-17 2017-02-22 马渊真人 基本元件
JP6177817B2 (ja) * 2015-01-30 2017-08-09 松定プレシジョン株式会社 荷電粒子線装置及び走査電子顕微鏡
JP6702807B2 (ja) * 2016-06-14 2020-06-03 日本電子株式会社 電子顕微鏡および画像取得方法
KR101865398B1 (ko) 2016-06-28 2018-06-07 (주)새론테크놀로지 전자 현미경의 고속 전자빔 주사 신호 발생 장치 및 방법
DE112017007822B4 (de) * 2017-09-29 2023-06-01 Hitachi High-Technologies Corporation Rasterelektronenmikroskop
US11139142B2 (en) 2019-05-23 2021-10-05 Applied Materials, Inc. High-resolution three-dimensional profiling of features in advanced semiconductor devices in a non-destructive manner using electron beam scanning electron microscopy
US11239048B2 (en) * 2020-03-09 2022-02-01 Kla Corporation Arrayed column detector
KR102857915B1 (ko) * 2020-07-20 2025-09-11 주식회사 히타치하이테크 에너지 필터, 및 그것을 구비한 에너지 애널라이저 및 하전 입자빔 장치
KR20230068893A (ko) * 2021-11-11 2023-05-18 삼성전자주식회사 주사 전자 현미경(Scannig Electron Microscope, 이하 SEM), SEM을 동작시키는 방법 및 이를 이용한 반도체 소자를 제조하는 방법

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JP2003303568A (ja) * 2002-04-11 2003-10-24 Keyence Corp 電子顕微鏡のチャージアップ防止方法および電子顕微鏡
JP2004134374A (ja) * 2002-07-09 2004-04-30 Leo Elektronenmikroskopie Gmbh 半導体装置の電子顕微鏡による観察方法およびその装置
EP1381074A3 (de) * 2002-07-09 2007-09-12 LEO Elektronenmikroskopie GmbH Verfahren und Vorrichtung zum elektronenmikroskopischen Beobachten einer Halbleiteranordnung
US7910887B2 (en) 2003-01-16 2011-03-22 Carl Zeiss Nts Gmbh Electron-beam device and detector system
JP2004221089A (ja) * 2003-01-16 2004-08-05 Leo Elektronenmikroskopie Gmbh 電子ビーム装置及び検出装置
JP2013055073A (ja) * 2003-01-16 2013-03-21 Carl Zeiss Nts Gmbh 電子ビーム装置
JP2012015130A (ja) * 2003-01-16 2012-01-19 Carl Zeiss Nts Gmbh 電子ビーム装置
JP2006080061A (ja) * 2004-09-07 2006-03-23 Kla-Tencor Technologies Corp 電子ビーム暗視野像形成のための装置および方法
JP2006114426A (ja) * 2004-10-18 2006-04-27 Hitachi High-Technologies Corp 試料観察方法及び電子顕微鏡
JP2006261111A (ja) * 2005-03-17 2006-09-28 Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh 分析システムおよび荷電粒子ビームデバイス
JP2008159568A (ja) * 2006-09-19 2008-07-10 Carl Zeiss Nts Gmbh 微小化構造を有する物体を検査及び加工するための電子顕微鏡、並びに、当該物体の製造方法
JP2008257914A (ja) * 2007-04-02 2008-10-23 Jeol Ltd ビーム装置
JP2009110788A (ja) * 2007-10-30 2009-05-21 Jeol Ltd 透過形電子顕微鏡及びその動作方法
US8455823B2 (en) 2008-12-02 2013-06-04 Hitachi High-Technologies Corporation Charged particle beam device
US9202667B2 (en) 2009-02-19 2015-12-01 Hitachi High-Technologies Corporation Charged particle radiation device with bandpass detection
US8629395B2 (en) 2010-01-20 2014-01-14 Hitachi High-Technologies Corporation Charged particle beam apparatus
DE112011100306B4 (de) 2010-01-20 2019-06-19 Hitachi High-Technologies Corporation Ladungsteilchenstrahlvorrichtung
DE112011100306T5 (de) 2010-01-20 2012-10-25 Hitachi High-Technologies Corporation Ladungsteilchenstrahlvorrichtung
JP5576406B2 (ja) * 2010-01-27 2014-08-20 株式会社日立ハイテクノロジーズ 荷電粒子線装置
WO2011092757A1 (ja) * 2010-01-27 2011-08-04 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP2012003902A (ja) * 2010-06-15 2012-01-05 Hitachi High-Technologies Corp 走査型電子顕微鏡及びその制御方法
JP5771628B2 (ja) * 2010-12-16 2015-09-02 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及びそれを用いた測長方法
WO2012081428A1 (ja) * 2010-12-16 2012-06-21 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及びそれを用いた測長方法
JP2012199052A (ja) * 2011-03-22 2012-10-18 Jeol Ltd 電子検出機構及びそれを備えた荷電粒子線装置
JP2013033671A (ja) * 2011-08-03 2013-02-14 Hitachi High-Technologies Corp 荷電粒子線装置
CN103718268A (zh) * 2011-08-03 2014-04-09 株式会社日立高新技术 带电粒子线装置
US9336984B2 (en) 2013-04-03 2016-05-10 Hitachi High-Technologies Corporation Charged particle beam device and measuring method using the same
JP2014203603A (ja) * 2013-04-03 2014-10-27 株式会社日立ハイテクノロジーズ 荷電粒子線装置およびそれを用いた計測方法
JP2014209482A (ja) * 2013-04-15 2014-11-06 カール ツァイス マイクロスコーピー ゲーエムベーハーＣａｒｌ Ｚｅｉｓｓ Ｍｉｃｒｏｓｃｏｐｙ ＧｍｂＨ エネルギー選択的検出器系を有する走査型粒子顕微鏡
WO2015016040A1 (ja) * 2013-08-02 2015-02-05 株式会社 日立ハイテクノロジーズ 走査電子顕微鏡
US9536703B2 (en) 2013-08-02 2017-01-03 Hitachi High-Technologies Corporation Scanning electron microscope
JPWO2015016040A1 (ja) * 2013-08-02 2017-03-02 株式会社日立ハイテクノロジーズ 走査電子顕微鏡
DE112014002951B4 (de) 2013-08-02 2020-08-06 Hitachi High-Technologies Corporation Rasterelektronenmikroskop
JPWO2018134870A1 (ja) * 2017-01-17 2019-11-07 株式会社日立ハイテクノロジーズ 走査電子顕微鏡および走査電子顕微鏡による試料観察方法
WO2018134870A1 (ja) * 2017-01-17 2018-07-26 株式会社日立ハイテクノロジーズ 走査電子顕微鏡および走査電子顕微鏡による試料観察方法
US10943762B2 (en) 2018-02-08 2021-03-09 Hitachi High-Tech Corporation Inspection system, image processing device and inspection method
US12142457B2 (en) 2019-10-31 2024-11-12 Hitachi High-Tech Corporation Charged particle beam device
US12142455B2 (en) 2020-04-10 2024-11-12 Asml Netherlands B.V. Charged particle beam apparatus with multiple detectors and methods for imaging
WO2022064628A1 (ja) * 2020-09-25 2022-03-31 株式会社日立ハイテク 電子顕微鏡
WO2022065428A1 (ja) * 2020-09-25 2022-03-31 株式会社日立ハイテク 電子顕微鏡
JPWO2022065428A1 (ja) * 2020-09-25 2022-03-31

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EP1271603B1 (en) 2009-08-12
KR20020077457A (ko) 2002-10-11
EP1271603A4 (en) 2007-05-16
JP4069624B2 (ja) 2008-04-02
US6646262B1 (en) 2003-11-11
EP1271603A1 (en) 2003-01-02
KR100494300B1 (ko) 2005-06-10
DE60042758D1 (de) 2009-09-24
EP2088615B1 (en) 2013-02-13
EP2088615A1 (en) 2009-08-12

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