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WO2001075187A1 - Systeme permettant de diriger de multiples magnetrons au moyen d'un courant alternatif multiphase - Google Patents

Systeme permettant de diriger de multiples magnetrons au moyen d'un courant alternatif multiphase Download PDF

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Publication number
WO2001075187A1
WO2001075187A1 PCT/US2001/009735 US0109735W WO0175187A1 WO 2001075187 A1 WO2001075187 A1 WO 2001075187A1 US 0109735 W US0109735 W US 0109735W WO 0175187 A1 WO0175187 A1 WO 0175187A1
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WO
WIPO (PCT)
Prior art keywords
plasma
substrate
target
sputter deposition
targets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2001/009735
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English (en)
Inventor
David J. Christie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Energy Industries Inc
Original Assignee
Advanced Energy Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Energy Industries Inc filed Critical Advanced Energy Industries Inc
Priority to US10/240,692 priority Critical patent/US20030209423A1/en
Publication of WO2001075187A1 publication Critical patent/WO2001075187A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Definitions

  • This invention relates to the field of magnetron systems. Specifically, it provides a method and system for driving multiple groups of magnetrons with multiple phase AC power to sputter deposit an insulating material on a substrate in a continuous mode.
  • Plasma deposition systems are commonly configured as shown in Figure 1 , with two magnetrons driven by an AC generator, electrically isolated from the plasma chamber. This technique was described by Este and Westwood in 1988, J. Vac. Sci. Technology A6(3) May/June 1988, pgs. 1845-1848. Now it is commonly referred to as dual magnetron sputtering or dual cathode sputtering. In this configuration an AC power supply 10 is connected to the magnetrons 12 and 14. The magnetron 12 will act as the anode for the magnetron 14 when the voltage between the magnetrons is such that magnetron 12 is positive with respect to the magnetron 14.
  • magnetron 14 will act as the anode for the magnetron 12 when the voltage between the magnetrons is such that the magnetron 14 is positive with respect to 12.
  • the AC source causes any thin films deposited on the anodes to be sputtered away when the magnetrons alternatively turn negative.
  • the plasma 16 in the chamber causes a thin film to be deposited on the substrate 18.
  • the plasma chamber 20 is grounded.
  • the gas then combines with conductive sputtered material to form a dielectric.
  • This dielectric tends to be deposited on the sputtering target and anode as well as the work piece, resulting in an insulating coating on both which will eventually degrade and perhaps even shut down the process. This degradation is primarily due to an effect that is referred to as a "disappearing anode".
  • the anode will disappear because it is eventually coated with an insulator, the reactively formed dielectric compound deposited on the work piece.
  • the pair of magnetrons is driven by an AC supply. Therefore, they alternate roles between cathode and anode.
  • AC power supplies on the market today control and measure the total power to the two magnetrons. Measurement and control of the power, current and voltage for each magnetron is not yet available in AC supplies. While it is currently common to drive pairs of magnetrons with a single AC phase, there are advantages to delivering power in three or more phases. AC mains power is typically delivered in three phases because the addition of one wire results in the ability to deliver 1.73 times more power. Hence, adding 50% results in a gain of 73%. There are currently many coating systems configured with groupings of three or more magnetrons.
  • a means of generating multiple phase AC is disclosed in US patent 5,535,906, issued to Drummond.
  • This patent discloses the use of rectified multiple phase AC to drive a DC plasma, but never even hints at the idea of using the AC to drive multiple magnetrons directly.
  • the advantage of using an AC generator is that it is less complex than a pulsed generator, and therefore, less expensive. It is also possible to construct an AC generator which can independently regulate the power delivered to each of the magnetrons it drives, even though that is an advantage commonly attributed to the square wave pulsed approach to driving multiple magnetrons.
  • the current and voltage waveforms delivered by an AC generator would be substantially sinusoidal into a resistive load, however, the load to be driven here is plasma.
  • a magnetron plasma has voltage - current (V-I) characteristics that are significantly non-linear, as well as dynamics which include time-varying impedance. The result is that the actual waveforms from a resonant AC generator driving a plasma rarely appear sinusoidal.
  • each magnetron target could be different material, and a single reactive gas or mixture of reactive gases, could be combined with the target materials to form a film.
  • an AC generator for supplying multiphase AC power to multiple magnetrons wherein independent power regulation of each magnetron enables multiple depositions of films within a processing chamber.
  • An AC power supply is connected to each of the magnetron targets disposed in the plasma chamber to independently regulate power to each target wherein the voltages on the targets are periodically reversed such that periodically at least one target at a given time acts as an anode collecting electrons when its voltage is positive relative to the plasma while the other targets act as cathodes collecting ions when their voltage is negative relative to the plasma.
  • a DC bias can be connected to the AC power sources wherein by changing the bias, the energy and flux of ions and electrons to the substrate can be changed to increase the density of the deposited film and its refractive index, and alter the mo ⁇ hology and stress of the film.
  • Figure 1 shows a prior art plasma processing chamber with one AC power source driving two magnetrons
  • Figure 2a shows a plasma processing chamber using one arrangement for three
  • Figure 2b shows a plasma processing chamber using another arrangement for three AC power sources to drive three magnetrons
  • FIG 3 shows a plasma processing chamber as in Figure 2a with a DC bias supply
  • Figure 4 shows a plasma processing chamber driven by four AC phases.
  • Figures 2a and 2b Two examples where three phase AC may be used to drive a magnetron plasma are shown in Figures 2a and 2b.
  • Figure 2a illustrates multiphase AC sources A, B, and C connected in a wye configuration to magnetrons 22, 24, and 26 within the grounded processing chamber 20.
  • Figure 2b illustrates the same sources and magnetrons configured in a delta configuration.
  • the AC sources have a specific phase relationship to each other. They would typically be phased 120 degrees from the adjacent sources, so the sources could be considered to have absolute phases of 0, 120, and 240 degrees. There may be an advantage in some cases to vary from this phase relationship, perhaps for purposes of controlling the relative power delivered to each of the three electrodes.
  • the magnetrons sputter material when they are at a negative potential, and when the conventional current to them is negative.
  • At least one magnetron will function as an anode at any given time, since at least one source will be positive at any given time.
  • the AC sources may be separate supplies or may be separate lines emanating from the same supply.
  • a single substrate or multiple substrates such as 28 placed in the chamber in close proximity to the plasma may have thin films deposited from each magnetron
  • FIG. 3 shows a DC bias supply 30 to the multiphase AC power sources A, B, and C feeding the three magnetrons 22, 24, and 26 in the plasma chamber.
  • the DC bias supply can be added to other arrangements as well.
  • a DC bias can be useful for changing the parameters of the film deposited by the sputtering process. By changing the bias, the energy, and flux of ions and electrons to the substrate can be changed. This effect can be exploited to increase the density of the film, and hence its refractive index.
  • the morphology and stress of the film can also be controlled to some degree by changing the bias level. This enables the film characteristics to be tailored for specific applications.
  • phase power systems such as conventional AC mains power
  • Figure 4 shows a plasma processing system driven by a four phase power source.
  • the extension to five or more phases is also possible and will be seen as an extension to the concepts presented in Figures 2 and 4.
  • Total power can be measured by techniques for measuring power into three phase systems known to those skilled in the art.
  • Modern high frequency multiplier integrated circuits with high accuracy such as those manufactured by Burr-Brown and Analog Devices, enable the use of these techniques at higher frequencies than typically used for AC mains power.
  • the frequencies of interest are currently typically between 10 and 200 kHz.
  • Average and/ or RIMS current delivered to each magnetron may be determined by gating the measurement, and calculating the average and/or RMS current based on the time that the current to the magnetron is negative.
  • Standard integrated circuits may be used to compute the RMS and average values of a waveform. Voltage may be a more complicated measurement.
  • the RMS voltage delivered to each magnetron would be measured separately.
  • the voltage of interest is really the RMS or average voltage during the time the individual magnetrons sputter. This time period can be determined as the time when the conventional current (positive charges) to the magnetron is negative.
  • the desired voltage measurement would be to the anode. If more than one magnetron is acting as an anode, it may be desirable to average the anode voltages and take the difference between the sputtering magnetron voltage and the average anode voltage. This voltage can then be easily processed into an average or RMS voltage using modern integrated circuits such as op-amps, multipliers, and RMS circuits.
  • the power delivered to individual magnetrons can be controlled by adjusting the magnitudes, and possibly phases, of the individual voltages driving each of the magnetrons.
  • control of the individual magnitudes could be accomplished by pulse width modulation of the individual inverter phases to adjust the relative amplitudes of the phases, and frequency modulation to adjust the overall amplitude.
  • the basic concepts of the present invention may be embodied in a variety of ways. It involves both multiple phase processing techniques as well as devices to accomplish the appropriate processing.
  • the multiple phase power source techniques are disclosed as part of the results shown to be achieved by the various devices described and as steps that are inherent to utilization. They are simply the natural result of utilizing the devices as intended and described.
  • some devices are disclosed, it should be understood that these not only accomplish certain methods but also can be varied in a number of ways. Importantly, as to all of the foregoing, all of these facets should be understood to be encompassed by this discussion.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un nouveau procédé permettant de déposer par pulvérisation réactive un film mince sur un substrat (28) au moyen d'un courant multiphase alternatif. Ce courant alimente des cibles à magnétrons multiples (22, 24, 26) dans une chambre à plasma (20) afin de réguler indépendamment l'énergie dans chaque cible (22, 24, 26) où les tensions sur les cibles (22, 24, 26) sont périodiquement inversées de manière à ce que, périodiquement, au moins une cible (22, 24, 26) à un moment donné joue le rôle d'une anode recueillant des électrons, lorsque sa tension est positive par rapport au plasma (16), tandis que les autres cibles (22, 24, 26) agissent comme des ions collecteurs lorsque leur tension est négative par rapport au plasma. Une polarisation continue peut être connectée aux sources de courant alternatif dans lequel, en modifiant la polarisation, l'énergie et le flux d'ions et d'électrons vers le substrat (28) peuvent être changés afin d'augmenter la densité du film déposé ainsi que son indice de réfraction et altérer la morphologie du film et la contrainte exercée sur celui-ci.
PCT/US2001/009735 2000-04-04 2001-03-27 Systeme permettant de diriger de multiples magnetrons au moyen d'un courant alternatif multiphase Ceased WO2001075187A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/240,692 US20030209423A1 (en) 2001-03-27 2001-03-27 System for driving multiple magnetrons with multiple phase ac

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19447000P 2000-04-04 2000-04-04
US60/194,470 2000-04-04

Publications (1)

Publication Number Publication Date
WO2001075187A1 true WO2001075187A1 (fr) 2001-10-11

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005010919A1 (fr) 2003-07-25 2005-02-03 Unaxis Balzers Aktiengesellschaft Anode coulissante pour source de pulverisation a magnetron
WO2021016620A1 (fr) * 2019-07-25 2021-01-28 Advanced Energy Industries, Inc. Systèmes et procédés de pulvérisation à courant continu pulsé
WO2024227509A1 (fr) * 2023-05-03 2024-11-07 Applied Materials, Inc. Procédé et appareil de dépôt par pulvérisation pour déposer un matériau sur un substrat

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029467A (ja) * 1983-07-26 1985-02-14 Anelva Corp スパッタリング装置用電力供給装置
US5057185A (en) * 1990-09-27 1991-10-15 Consortium For Surface Processing, Inc. Triode plasma reactor with phase modulated plasma control
US5082546A (en) * 1990-12-31 1992-01-21 Leybold Aktiengesellschaft Apparatus for the reactive coating of a substrate
JPH08124864A (ja) * 1994-10-28 1996-05-17 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置
US5565074A (en) * 1995-07-27 1996-10-15 Applied Materials, Inc. Plasma reactor with a segmented balanced electrode for sputtering process materials from a target surface

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029467A (ja) * 1983-07-26 1985-02-14 Anelva Corp スパッタリング装置用電力供給装置
US5057185A (en) * 1990-09-27 1991-10-15 Consortium For Surface Processing, Inc. Triode plasma reactor with phase modulated plasma control
US5082546A (en) * 1990-12-31 1992-01-21 Leybold Aktiengesellschaft Apparatus for the reactive coating of a substrate
JPH08124864A (ja) * 1994-10-28 1996-05-17 Matsushita Electric Ind Co Ltd 真空プラズマ処理装置
US5565074A (en) * 1995-07-27 1996-10-15 Applied Materials, Inc. Plasma reactor with a segmented balanced electrode for sputtering process materials from a target surface

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005010919A1 (fr) 2003-07-25 2005-02-03 Unaxis Balzers Aktiengesellschaft Anode coulissante pour source de pulverisation a magnetron
US7678239B2 (en) 2003-07-25 2010-03-16 Oerlikon Solar Ip Ag, Trubbach Sliding anode magnetron sputtering source
WO2021016620A1 (fr) * 2019-07-25 2021-01-28 Advanced Energy Industries, Inc. Systèmes et procédés de pulvérisation à courant continu pulsé
CN114450434A (zh) * 2019-07-25 2022-05-06 先进工程解决方案全球控股私人有限公司 脉冲dc溅射系统和方法
EP4004252A4 (fr) * 2019-07-25 2023-08-09 AES Global Holdings, Pte. Ltd. Systèmes et procédés de pulvérisation à courant continu pulsé
WO2024227509A1 (fr) * 2023-05-03 2024-11-07 Applied Materials, Inc. Procédé et appareil de dépôt par pulvérisation pour déposer un matériau sur un substrat

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