WO2001061071A2 - Condensation coating method - Google Patents

Abstract

A method and device for the production of coated substrates, such as OLEDs is disclosed, whereby at least one layer is deposited on the at least one substrate, by means of a condensation method and a solid and/or fluid precursor and, in particular, at least one sublimate source is used for at least one part of the reaction gases. The invention is characterised in that, by means of a temperature control of the reaction gases between precursor source(s) and substrate, a condensation of the reaction gases before the substrate(s) is avoided.

Description

00001 condensation coating process

00002

00003 Technical field

00004

The invention relates to a method and a

00006 Device for the production of layer systems, such as

00007 e.g. for thin-film components such as OLEDs or similar

00008 Layer structures using condensation coating.

00009 These layer systems consist in particular of organic

00010 see materials such as "small molecules" (e.g.

00011 Alq) or polymers (e.g. PPV). 00012

00013 State of the art 00014

00015 condensation coating process for the production of

00016 components, in particular made of organic materials

00017 are known. In this process, the inventory

00018 parts of the layer to be produced by means of gaseous

00019 and / or organic compounds (salts) in the loading

00020 stratification chamber (hereinafter referred to as the reaction chamber

Designated 00021) transported. 00022

00023 The coating of the substrate (mostly glass, foil or

00024 plastics) is based on the condensation pro

00025 times, the substrates being kept at a temperature

00026 th, which is lower than the temperature of the

00027 molecules in the gas phase. 00028

00029 VPD (Vapor Phase Deposition) processes are used for

00030 Separation of different materials from the gas phase

00031 se used. Also in the area of separating orga-

00032 layers, this process has

00033 sets. The VPD process is different

00034 reactor concepts checked, e.g .: 00035

BESTATIGUNGSKOPIE 00036 Horizontal tube reactors in which the gas flow

00037 horizontal and parallel to the coating surface

00038 runs (borrowed from the classic VPE reactors). to

00039 Avoiding efficiency reducing wall condensation

00040 the reactors are designed as a hot wall system. 00041

This method or this known device

00043 for coating mostly flat and non-variable

00044 substrate geometries used. 00045

00046 The disadvantages lie in

00047 a) the procedural and geometric coupling

00048 the precursor sublimation and its introduction

00049 tung,

00050 b) the use of reactor geometries with large

00051 system surface in relation to the coating

00052 surface, i.e. hydrodynamically a big one

00053 amount of precursors of the coating on the

00054 substrate lost

00055 c) from b) following expensive hot wall technology. 00056

00057 In vapor deposition systems whose principle of operation is the condenser

00058 sation, are the source materials in the system

00059 integrated, i.e. the source current is not timed

00060 controllable. He can not suddenly or

00061 can be switched off. The time control happens

00062 here on the control of the evaporation energy (e-beam

00063 or resistance heating). Furthermore, the systems are not

00064 designed as a hot-wall system, so that an essential

00065 rather share of the materials on the system walls and

00066 components condensing to reduce efficiency. 00067

00068 The disadvantages of this technology also lie in the poor

00069 th controllability of stochiometry or of sharp

00070 fen transitions for multi-layer requirements. 00071 In the CVD system, the sources are individually timed and

00072 precisely controllable in the amount, however the

00073 transport from a source not the principle of sublimation

00074 ation, but that of evaporation. In these CVD systems

00075 the coating process is not condensation

00076 on, but kinetically or diffusion-limited wax

00077 turn (chemical reaction). These procedures and devices

00078 are used for the coating of mostly flat and

00079 non-variable substrate geometries used. 00080

00081 Alternative methods are spin on or OMBD. 00082

00083 The methods and devices described above

00084 do not meet that in one or more properties

00085 requirement for the production of the exemplary

00086 th layer systems with regard to precise control

00087 the stoichiometry and multi-layer requirement as well as the

00088 economy. 00089

The invention is based on the object, the generic

To improve 00091 procedures in such a way that the

00092 parameters can be predefined individually that the

00093 efficiency is increased, and the quality of the on the sub

00094 strat condensed layers to increase. 00095

The problem is solved by the in the claims

00097 specified invention. The subclaims present

00098 partial further developments of the invention.

00099.

00100 The use of a combination of special precursors

00101 sorsublimation, evaporation, gas inlet geometry and

00102 Improved reactor geometry for the coating process

00103 ensures the control and economy of the process

00104 rens for condensation coating starting from solid

00105 precursors. The precursors become individual 00106 and sublimed outside the reaction chamber

00107 is steaming. These starting materials can be on the substrate

00108 selectively condense. By means of a

00109 ordered mask can be structured. The

00110 Mask can be attached to the substrate. 00111

00112 All reactor concepts have in common that the type of

00113 precursor S blimation after their gas injection into the

00114 reaction vessel is the main factor in the gas-phase chemistry

00115 element substances as well as their transport behavior

00116 determined and thus the properties of the deposited

00117 layers, i.e. the type of gas feed dominates

00118 the process control. 00119

00120 These properties are e.g. (i.e. free from external

00121 men / substances), particles and / or defect density, together

00122 setting in multi-component system, optical and electrical

00123 Properties of the layers and efficiency of the deposit

00124 tion. The gas inputs used according to the prior art

00125 let geometries either only meet the hydrodynamic

00126 see or the thermodynamic task. 00127

00128 An unwanted deposition often takes place in the area of the

00129 inlet geometry. This arises when

00130 range either too high (i.e. kinetically limited

00131 deposition) or too cold surface temperatures (i.e.

00132 condensation or thermophoresis), or

00133 a mixing of the gases within the zone of

00134 introduction or within the chamber by flow

00135 and / or diffusion occurs (nucleation = homogeneous

00136 gas phase reaction). The parasitic coverage then has

00137 that the properties (thermal

00138 and / or chemical) of the gas inlet during the process

00139 ses change, so that the control over a continuous

00140 lie and uniform deposition is not guaranteed 00141 is. The parasitic deposits lead to dragging of individual components into the subsequent 00143 layers. Furthermore, this assignment reduces the 00144 efficiency of the elements, especially if the inlet geometry has a large surface area compared to the usable area. 00147 00148 Furthermore, the gas inlet unit is typically designed in such a way that the effective separation of the gases, which requires the 00150 thermally different properties of the precursors 00151, is not guaranteed. The result is 00152 undesirable reactions of some gases in the gas phase 00153 with one another (ie nucleation), which negatively influences the property 00154 of the layer to be deposited, for example 00155 particles or contamination. The nucleation 00156 reduces the material efficiency and leads to contamination of the 00157 layer with these compounds. 00158 00159 In order to reduce the above-mentioned disadvantages, who 00001 160 would typically position today's gas inlets far from the surfaces to be coated 00162 in terms of process technology, ie either spatially or by choosing the 00163 process parameters (eg very low pressure or large 00164 Reynold numbers). The currently known reactors are therefore characterized by low efficiency (clearly 00166 less than 25%), ie only a small proportion of the elements introduced in 00167 are deposited in the usable 00168 functional layer. 00169 00170 The layer properties produced with 00171 systems of this type are therefore not optimal and the economy of such systems is also only low. 00173 00174 For sublimation of the fixed precursors 00175 evaporator sources are used, by the choice 00176 of the container pressure and temperature the source material

00177 from the solid phase directly in gaseous form

00178, i.e. sublimate. Is the vapor pressure of the source

00179 lenmaterials very low, high temperatures

00180 required. According to the current state of the art

00181 therefore some precursors in boats are inserted into the reactor

00182 leads. In the hot wall systems used, the

00183 temperature of the reactors over the overall length

00184 lates that the required sublimation temperature depending

00185 precursor is set in each zone. disadvantage

00186 of this structure are imprecise setting of the optimal

00187 sublimation temperature, large volumes of evaporator

00188 device, not separate pressure setting per precursor

00189 sor different and independent of the reactor process

00190 pressure, not flexible and individual Teiπperaturen-

00191 setting per precursor. Most serious disadvantage

00192 but the temporally not controlled source current is there

00193 these evaporator sources open to the coating zone

00194 act. 00195

00196 The technical teaching presented here should all above

00197 remedy the disadvantages and, depending on the application,

00198 request the appropriate methods and devices

00199 services available. 00200

00201 The sublimation device of the raw materials (precursor

00202 soren) is geometrically separated from the reactor and each

00203 precursor executed individually. It can be flexible and

00204 optimizes the transport quantity per precursor in a controlled manner

00205 and controlled. Each precursor is individual,

00206 precisely timed, and also independent of

00207 reactor parameters. 00208

00209 The inlet geometry ensures minimal chamber surface

00210 in relation to the coating surface (close to 1: 1) 00211 and thus maximized process efficiency. The

00212 design of the geometry of the inlet avoids in

00213 principle reactions between the precursors as well

00214 parasitic coating on the surface of the inlet

00215 itself. 00216

00217 The design of the inlet geometry of the precursors

00218 in connection with the reactor geometry ensures homogeneous

00219 Distribution of all materials with more precise timing

00220 control. 00221

00222 The coatings obtained are characterized by

00223 a homogeneity of the composition, visible thickness and

00224 doping in the range of 1%. You can also use

00225 the apparatus and the process transitions in the material

00226 and dopant profiles precisely and reproducibly

00227 will be. The formation of particles is due to the

00228 invention avoided. 00229

00230 The place of sublimation of the starting materials (precursory

00231 ren) is carried out separately from the reactor chamber.

00232 The arrangement is selected so that the output

00233 fabric with minimal transient in the gas inlet

00234 leads. This is done in a coating system

00235 the raw material container in the immediate vicinity e.g.

00236 placed on the reactor cover. A short pipe route

00237 directs the material directly into the gas inlet

00238 00239

00240 The tank for the raw materials is specially and independently

00241 gig heated from the reactor temperature. For this, either

00242 which uses a resistance heater around the tank, or

00243 in a hollow jacket around the tank thermostatted rivers

00244 liquid pumped. 00245 00246 The pressure in the tank can be adjusted with a control valve

00247 Output side of the tank individually and independently of the

00248 reactor are regulated. The control valve is heated

00249 and represents a positive one in the course of the material path

00250 temperature gradients to avoid local condensation

00251 station sure. 00252

00253 The transport of the sublimed starting material to the reac-

00254 gate is supported by a gas flow. This

00255 Gas is also used to set a precursor concentration

00256 tion used in the supply line. 00257

00258 For time control of the line of the raw materials

00259 in the reactor the pressure valve and the mass flow

00260 regulated, i.e. the throttle valve closes fully

00261 constantly, the mass flow is set to 0. 00262

00263 This arrangement can be done on the reactor in multiple

00264 can be repeated so that each material is independent

00265 gig is regulated from each other. 00266

00267 The gas inlet is opposite the substrate in the reactor

00268 as an arrangement of many nozzles (hereinafter show-

00269 erhead) from one surface, hereinafter referred to as

00270 num. The nozzles are dimensioned so that they

00271 according to the precursor property, such as viscosity,

00272 mass and concentration of a turbulence-free injection

Ensure 00273 in the chamber. 00274

00275 The distance from nozzle to nozzle is in the ratio of

00276 distance to gas inlet optimized, i.e. those from the

00277 "Jets" emerging from the sub-jet

00278 strat surface decayed and form a whole

00279 homogeneous flow level. 00281 The nozzles can be used individually or in total in any

00282 angles are made in the gas inlet surface

00283 around the transport distribution of the starting materials homogeneous

Check 00284 for the shape of the substrate. 00285

00286 The plane in which the nozzles for injection of the initial

00287 substances are introduced, can be flat for the loading

00288 Layering of flat substrates and also foils or

00289 curved for non-level, i.e. preformed substrates. 00290

00291 The entire plenum is activated by coolant in

00292 a cavity wall structure or by means of an electrical

00293 heating (resistance heating, Peltier), so thermal

00294 controls that a positive temperature gradient

00295 compared to the sublimation temperature. 00296

00297 The inner volume of the plenum is sublimated

00298 Starting material via a very short, tempered line

00299 injected. 00300

00301 For setting the optimized hydrodynamic conditional

00302 conditions on the nozzles is in addition to the

00303 fen set carrier gas via a further feed line. 00304

00305 This gas also ensures rapid purging of the

00306 Plenums for time controlled switching on and off

00307 of the precursor into the chamber. 00308

00309 The arrangement described is used for multi-substance

00310 fertilizer consistently executed for each precursor. Doing so

00311 using the "closed coupled showerhead" technology

00312 secured the separate injection for each precursor. By

00313 everyone becomes an individual heating system for each plenum

00314 starting material along a positive temperature gradient

00315 th to avoid parasitic condensation 00316 riert. The nozzles are dimensioned and to each other

00317 arranged that no local mixture of precursors

00318 the nozzles. The arrangement of the plenaries in levels

00319 is chosen so that the longer nozzles in the thermal

00320 contact the following pleni a positive tempera-

00321 gradient to avoid condensation this

00322 precursor receives. 00323

00324 In particular, such salts come in as starting materials

00325 consideration that describes U.S. Patent 5,554,220. This

00326 salts are sublimed in evaporators. The evaporators

00327 can in particular have a shape such as

00328 the German patent application DE 10048 759

00329 writes. There the gas is below a frit

00330 the salt is in the form of a bed, the

00331 evaporator fed. Above the frit or

00332 fill with the gaseous starting material

00333 derived saturated gas. By a corresponding

00334 higher temperature of the downstream pipes or

00335 the partial pressure of the starting material is

00336 kept below its saturation partial pressure,

00337 so that condensation is avoided. 00338

00339 Embodiments of the invention are as follows

00340 explained with the accompanying drawings. It shows: 00341

00342 Figure 1 in a rough schematic representation of a device

00343 _ device according to the invention, 00344

00345 Figure 2 also in a rough schematic representation

00346 a gas inlet unit, which in a pre

00347 direction according to FIG. 1 can be used, 00348

00349 Figure 3 shows a section along the line III-III

00350 the gas inlet unit, 00351 Figure 4 shows a section along the line IV-IV through the 00352 gas inlet unit, 00353 00354 Figure 5 shows a second embodiment of a device in a rough schematic representation, 00356 00357 Figure 6 shows a second embodiment of the gas inlet 00358 unit, 00359 00360 Figure 7 is an aid to explanation for the process parameters 00361 ter, and 00362 00363 Figure 8 in a schematic representation a source for 00364 a starting material. 00365 00366 The devices 00367 shown in FIGS. 1 and 5 each have two temperature-controlled containers 5, 5 '. In 00368 of the device shown in Figure 1, these 00369 containers are arranged directly on the lid 14 of the reactor 10 00370. In the exemplary embodiment shown in FIG. 5, the two containers 5, 5 'are arranged somewhat 00372 away from the reactor 10. Tanks 1, 3 are located in the containers 5, 00373 5 '. These tanks act as a 00374 source for the starting materials. In the tanks 1, 3 there are liquid starting materials 2, 4. The starting materials 00376 fe can also be solid. Inside the temperature-controlled 00377 containers 5, 5 'there is a temperature such that 00378 the starting materials 2, 4 00379 located in the tanks 1, 3 evaporate. The evaporation rate can be influenced via the 00380 temperature. In the container 5 in the 00381 embodiment, three sources and in the container 5 '00382 three sources are also arranged. The two 00383 containers 5, 5 'can be kept at different temperatures. 00385 00386 In each of the two containers 5, 5 'leads a carrier gas

00387 line to conduct a carrier gas 35. In the carrier

00388 a gas discharge line for each source leads off

00389 the tanks 1, 3 emerging gaseous starting materials

00390 fe. The tanks 1, 3 are by means of heat-resistant valves

00391 le, in particular control valves 34, which are also themselves

00392 can be heated, closable and evident. The

00393 lines 6, 7 through which the carrier gas and the

00394 Carrier gas transported reaction gases flow, open

00395 in the embodiment of Figure 1 directly in the

00396 reactor. In the exemplary embodiment according to FIG. 5

00397, the two lines 6, 7 run over a free

00398 route where they are on by means of tempered coats 8, 9

00399 at a temperature that is the same or greater than

00400 is higher than the temperature in the containers 5, 5 '. The

00401 lines 6, 7 open into the reactor. The dosage of the

00402 Reaction gases occur via the temperature of the container

00403 5, 5 'or the control valves 34.00404

00405 In the area of the mouth of lines 6, 7 the

00406 reactor lid 14 a temperature that is greater than

00407 the temperature in the tempered containers 5, 5 '. The

00408 Lines 6, 7 do not open directly into the

00409 onskamer 11, but first in one in the reaction

00410 chamber to a gap 29 from the reactor cover 14 beabstan-

00411 the gas inlet unit 15. A typically designed

00412 gas inlet unit show the figures 2 and 6. 00413

00414 The gas inlet unit 15 is located immediately

00415 above the substrate 12. Between the substrate 12

00416 and the base plate 17 of the gas inlet unit 15

00417 detects the reaction chamber. The substrate 12 lies on

00418 a susceptor 13, which is cooled. The temperature

00419 of the susceptor is regulated. The susceptor can do this

00420 be provided with pelletizing elements. It is also 00421 possible, as shown in Figure 1, that the susceptor

00422 13 has a hollow chamber 41 on the inside, which can be

00423 lines 40 is flushed with a coolant, so

00424 that the temperature of the susceptor 13 on a

00425 temperature can be maintained, which is less than

00426 the temperature of the gas inlet unit 15. 00427

00428 This temperature is also lower than the temperature

00429 of the reactor walls 37. The temperature of the gas inlet

00430 unit 15 is above the condensation temperature of

00431 gaseous discharge into the gas inlet unit 15

00432 starting materials 2, 4. Since the temperature of the reactor walls

00433 en 37 is higher than the condensation temperature,

00434 condense those emerging from the gas inlet unit 15

00435 molecules exclusively on the one on the susceptor 13

00436 overlying substrate 12. 00437

00438 In the gas inlet shown in FIGS.

00439 units 15 each is a so-called

00440 th, known "showerhead". The execution

00441 game of Figure 2 shows a showerhead with a total

00442 two separate volumes 22, 23. The volumes

00443 are by means of an intermediate plate 18 against each other and

00444 by means of a cover plate 16 or a base plate 17

00445 delimited from the reaction chamber 11. The show-

In contrast, 00446 erhead "according to FIG. 6 has only one chamber.

00447 This volume 22 is delimited by the base plate 17,

00448 a ring 33 and the cover plate 16. In the cover plate

00449 16 open the already mentioned pipes 6, 7 for

00450 the two starting materials. In the embodiment

00451 according to FIG. 6, only one pipe 6 is required.

00452 The pipes 6 and 7 open in a radial star shape

00453 extending channels 21 and 20, respectively, in the cover plate 16

00454 are arranged. After a diversion in the border area

00455 of the essentially cylindrical body of the gas inlet 00456 let unit 15 open the channels 20 and 21 in radially 00457 outer mouth funnels 27 and 28, which are located on 00458 the outer periphery of the cylindrical volumes 00459 22, 23. The gases emerging from the mouth funnels 27, 28 00 460 are evenly distributed in the volumes 22, 23 00 461. 00462 00463 The intermediate 00464 plate 18 provided in a multi-chamber showerhead has openings from which tubes 24 00465 extend, which protrude through the volume 23 and are connected to the 00466 base plate 17 such that the gas in the volume 22 does not come into contact, with the 00468 gas in volume 23. In the base plate 17 00469 there are alternating to the openings 26 of the tubes 00470 chen 24 openings 25, from which the gas in the volume 23 00471 can escape. 00472 00473 The gases in the volumes 22, 23 exit 00474 through the nozzle-like openings 25, 26 in 00475 in a homogeneous flow field. 00476 00477 The gases emerge turbulently from the openings 25, 26. 00478 They each form a jet, so that the 00480 gas streams emerging from 00479 side by side openings 25, 26 only mix directly above the substrate 12 00481 within the boundary 00482 layer denoted by d in FIG. Above the boundary layer d, the rays 36 run 00483 essentially parallel to one another, 00484 without any significant mixing 00485 taking place between them. An almost homogeneous 00486 gas front is formed at a distance d. 00487 00488 In the exemplary embodiment 00489 shown in FIG. 2, the two volumes 22, 23 can be thermostatted independently of one another. In the shown in Figure 6 00491 embodiment is the only volume 22 ther os-

00492 feasible. In order to reduce the volumes 22, 23 to a

00493 set temperature that is greater than that

00494 temperature of the container 5, 5 'and significantly larger than

00495 the temperature of the susceptor 13, are heating coil 30,

00496 32 is provided. Instead of the heating coil 30, 32 it is

00497 but also conceivable, channels in the plates 17, 18, 16th

00498, and this from a tempered liquid

00499 flow through. 00500

00501 The ring 33 can be heated in a similar way

00502 den. The ring can be heated in a suitable manner

00503 may be arranged. But it can also be used accordingly

00504 tempered liquids kept at temperature

00505. 00506

00507 In the embodiment is below

00508 cover plate 16 a heating plate 31. FIG. 3 is closed

00509 remove that in the heating plate 31 a meandering

00510 heating coil 33 is introduced. The cover plate of the

00511 gas inlet unit 15 of FIG. 6 can be heated. 00512

00513 A heating coil 33 is also meandering into the base plate 17.

00514 introduced in this way (see FIG. 4) 00515

00516 Such as starting materials for the coating

00517 salts are used, such as U.S. Patent 5,554,220

00518 describes. These salts are sublimed in tanks,

00519 by supplying a carrier gas to the tanks, which

00520 flows through a bed of salts. Such one

00521 evaporator is described in DE 100 48 759.9. 00522

00523 FIG. 8 also shows an evaporator by way of example

00524 for a liquid. A carrier gas 42 is through a

00525 three-way valve via a feed line in the liquid 00526. Or solid starting material 2 is introduced. It flows through

00527 then the output fabric 2 to pass through the outlet line

00528 and the heated valve 34 to leave the tank 1.

00529 Via a pipeline 6. It is by means of the carrier gas

00530 35 supplied to the gas inlet unit 15. The flushing of the

00531 tanks with the carrier gas 42 can by means of the three-way

00532 tiles can be switched on and off. Im switched off

00533 state, the carrier gas 42 flows through a bypass line

00534 device 44 directly into the discharge pipe 6.

00535 The gas flow 42 and the gas flow 35 are mass flow

00536 regulates. To the mass flow 42 when switching the three

00537 directional control valve 43, the bypass

00538 line 44 have the same flow resistance as

00539 the entire tank 1. 00540

00541 Each of the tanks 1, 3 indicated in FIGS. 1 and 5

00542 can be designed and wired like

00543 it is shown in Figure 8 or as in the

00544 DE 100 48 759.9 is described. 00545

00546 As a result of the dilution caused by the carrier gas 35

00547 is aimed, the partial pressure of the starting material 2 drops

00548 or the starting material 3 within the tanks 1, 3

00549 following piping system or the gas inlet

00550 unit 15. This dilution means that the temperature

00551 temperature in these subsequent pipe sections 6, 7 or

00552 in the gas inlet unit 15 may be less than that

00553 temperature in the containers 5, 5 'without a con-

00554 densation occurs because the temperature is still like this

00555 is high that the partial pressure of the individual output

00556 substances is below their saturation pressure. 00557

00558 By means of one or more sensors 38, which in particular

00559 re are arranged outside the reactor wall and the 00560 connected to the reaction chamber 11 via a channel 39

00561 den, the substrate temperature can be measured. 00562

00563 The gas introduced into the gap 29 can be chosen

00564 of a suitable composition in its thermal conductivity

00565 can be varied. By choosing the gas combination

00566 Settlement can accordingly the heat transport from or to

00567 gas inlet unit 15 can be set. This too

00568 The temperature can be influenced in this way. 00569

00570 All disclosed features are (in themselves) inventive

00571 considerably. In the disclosure of the registration is hereby

00572 also the disclosure content of the associated / attached

00573 priority documents (copy of the pre-registration) fully

00574 included in content, also for the purpose of features

00575 of these documents in claims of this application

00576 to record.

Claims

00577 CLAIMS 00578 00579 1. Process for coating substrates, in which 00580 at least one layer by means of a condensation 00581 driving applied to the at least one substrate 00582, and for which at least part of the reaction 00583 ongase solid and / or liquid starting materials and 00584 in particular use at least one sublimation source 00585 det, characterized by a concentration / 00586 and / or temperature control of the reaction gases between 00587 the source (1, 3) and the substrate (12) through which one 00588 condensation of the reaction gases upstream of the 00589 ten is avoided. 00590 00591 2. The method according to claim 1 or in particular according thereto, 00592 characterized in that a gas inlet unit 00593 (15) with an inlet geometry used for 00594 separation of the gases to suppress parasitic 00595 itary gas phase reaction provides. 00596 00597 3. Method according to one or more of the preceding 00598 according to the claims or in particular according thereto, 00599 records that the sources (1, 3) on different 00600 temperatures can be maintained. 00601 00602 4. Method according to one or more of the preceding 00603 the claims or in particular according thereto 00604 through the use of multiple injection arrangements 00605 (25, 26). 00606 00607 5. Method according to one or more of the preceding 00608 according to the claims or in particular according thereto, 00609 records that in order to minimize the parasitic 00610 tion and thus the losses from the gas phase 00611 injected NEN reaction gases without flow overlap 00612. 00613 00614 6. Method according to one or more of the preceding 00615 according to the claims or in particular according thereto, 00616 records that the exit velocity of the gases 00617 from the individual injection nozzles and injection 00618 are selected so that local Bernoulli effects 00619 can be avoided. 00620 00621 7. Method according to one or more of the preceding 00622 according to the claims or in particular according thereto, 00623 records that the pressure in the tank or tanks (1, 3) 00624 of the starting materials each by means of inert gas flushing (35) 00625 and control valve (34) regardless of the pressure in the 00626 gate chamber (11) is regulated. 00627 00628 8. Device for condensation coating with 00629 - a reaction chamber (11), 00630 - at least one susceptor (13) and 00631 - a gas supply system (5, 5 ^! ) With at least 00632 a source (1, 3) for the starting materials, 00633 characterized in that the sources (1, 3) reserve 00634 voire, the or the susceptors (13), the reactor walls 00635 and the gas inlet unit separately thermostatically 00636 that the reactor walls (37) block the gas inlet 00637 unit (15) and the precursor reservoir (1, 3) 00638 each higher temperatures than a substrate (12) 00639 the susceptor (13) can be regulated. 00640 00641 9. Device according to one or more of the preceding 00642 according to the claims or in particular according thereto, 00643 records that the sources (1, 3) are separated thermostatically 00644 are so that a positive Teıπperat ^* urgradient 00645 adjustable to all chamber and inlet surfaces 00646 and that the pressure and temperature 00647 amount of the gaseous starting materials is controllable. 00648 00649 10. Device according to one or more of the previously 00650 claims or in particular according thereto, thereby 00651 characterized that the thermostatting one or 00652 of all reservoirs (1, 3) using a liquid or 00653 electrically active components is executed. 00654 00655 11. Device according to one or more of the previously 00656 claims or in particular according thereto, thereby 00657 characterized that the heater is designed such 00658 that cleaning a reservoir through opposite 00659 process temperature increased temperature is possible. 00660 00661 12. Device according to one or more of the previously 00662 claims or in particular according thereto, thereby 00663 characterized that the gas inlet unit (15) as 00664 Single or multi-chamber showerhead with one or more 00665 separate plenums (volume 22, 23) is formed. 00666 00667 13. Device according to one or more of the previously 00668 claims or in particular according thereto, thereby 00669 characterized in that as carrier gas Ar, H_, N ", He 00670 or mixed. 00671 00672 14. Device according to one or more of the previously 00673 claims or in particular according thereto, thereby 00674 characterized that a gaseous starting material per 00675 plenum (22, 23) separately via nozzles (25, 26) in the 00676 reactor chamber (11) can be introduced, so that the 00677 Source materials only after exiting the gas inlet Mix 00678 especially just before the substrate (12) 00679 can. 00680 00681 15. Device according to one or more of the previously 00682 claims or in particular according thereto, thereby 00683 characterized that two or more gaseous starting 00684 substances per plenum (22, 23) separately via nozzles (25, 26) 00685 be introduced into the reaction chamber. 00686 00687 16. Device according to one or more of the previously 00688 claims or in particular according thereto, thereby 00689 characterized that the nozzles (25, 26) against each plenum 00690 above the substrate (12) at any angle 00691 are assigned. 00692 00693 17. Device according to one or more of the previously 00694 claims or in particular according thereto, thereby 00695 indicates that the nozzles (25, 26) per plenum (22, 23) 00696 the same or different diameters 00697, so that the same or different viscous materials 00698 flows of the starting materials a homogeneous injection 00699 Ensure distribution. 00700 00701 18. Device according to one or more of the previously 00702 claims or in particular according thereto, thereby 00703 characterized that the nozzles (25, 26) per plenum in 00704 same or different distance from each other in 00705 a distribution are designed so that there is a 00706 homogeneous closed injection distribution results. 00707 00708 19. Device according to one or more of the previously 00709 claims or in particular according thereto, thereby 00710 indicates that each plenum 22, 23 separately thermos 00711 can be identified, so that very different subli- 00712 lubricating starting materials can be used. 00713 00714 20. Device according to one or more of the previously 00715 claims or in particular according thereto, thereby 00716 characterized that the thermostatization of one or 00717 of all plenums (22, 23) using liquid or electrical 00718 trically active components (30, 32), and that 00719 the condensation of the raw materials in each plenum 00720 (22, 23) is avoided. 00721 00722 21. Device according to one or more of the previously 00723 claims or in particular according thereto, thereby 00724 characterized that sensors (38) and associated channels 00725 le (39) are provided in the reactor wall, the 00726 Dimensioning properties of the layers and / or on Allow 00727 of the surface of the substrates (12). 00728 00729 22. Device according to one or more of the previously 00730 claims or in particular according thereto, thereby 00731 characterized in that the or the susceptors (13) for 00732 Recording of substrates (12) with round, square, flat 00733 rather, arched shape or formed from foils. 00734 00735 23. Device according to one or more of the previously 00736 claims or in particular according thereto, thereby 00737 indicates that the susceptor uses a liquid 00738 speed in a hollow jacket (41) or electrically active 00739 components (Peltier / resistance heating) thermally so 00740 is controllable between the the susceptor surface 00741 and all other walls (37) and the gas phase one 00742 negative temperature gradient, so that the 00743 coating of the substrate via condensation control 00744 can be made. 00745 00746 24. Device according to one or more of the previously 00747 claims or in particular according thereto, thereby 00748 characterized that a heater for the susceptor 00749 (13) is designed such that cleaning of the 00750 susceptor (13) and the reaction chamber (11) through 00751 temperature higher than the process temperature 00752 can be performed. 00753 00754, 25. Device according to one or more of the previously 00755 claims or in particular according thereto, thereby 00756 characterized that by diluting the from the tanks 00757 (1, 3) emerging gas with a carrier gas (35) 00758 Concentration of the starting material in the pipeline 00759 (6) or the gas inlet unit (15) 00760 sets that the condensation temperature is below 00761 the source temperature is. 00762 00763 26. Device according to one or more of the above 00764 claims or in particular according thereto, thereby 00765 characterized in that the substrate during the coating 00766 processing process is masked, for example with a shadow 00767 aske is provided. 00768 00769 27. Device according to one or more of the previously 00770 claims or in particular according thereto, thereby 00771 characterized that to avoid abrupt mass 00772 current change the regulated mass flows to the 00773 tanks can be diverted into a bypass line (44) 00774 NEN.