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WO2001053561A1 - Chambre a pulverisation cathodique et chambre de transport a vide, et installations de traitement du vide comportant des chambres de ce type - Google Patents

Chambre a pulverisation cathodique et chambre de transport a vide, et installations de traitement du vide comportant des chambres de ce type Download PDF

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Publication number
WO2001053561A1
WO2001053561A1 PCT/CH2001/000020 CH0100020W WO0153561A1 WO 2001053561 A1 WO2001053561 A1 WO 2001053561A1 CH 0100020 W CH0100020 W CH 0100020W WO 0153561 A1 WO0153561 A1 WO 0153561A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering
chamber according
substrate
chamber
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CH2001/000020
Other languages
German (de)
English (en)
Inventor
Martin Dubs
Roman Schertler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Unaxis Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unaxis Balzers AG filed Critical Unaxis Balzers AG
Priority to HK03101795.2A priority Critical patent/HK1051056A1/zh
Priority to JP2001553418A priority patent/JP5059269B2/ja
Priority to EP01900067A priority patent/EP1250471A1/fr
Publication of WO2001053561A1 publication Critical patent/WO2001053561A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber

Definitions

  • the present invention relates to a sputtering chamber with at least one sputtering source with a new sputtering surface that is at least approximately symmetrical with respect to a central axis, further with a substrate carrier that can be rotated in a driven manner about a substrate carrier axis, the central axis and substrate carrier axis being skewed relative to one another, this according to the preamble of claim 1.
  • the present invention relates to a vacuum treatment plant with such a sputtering chamber according to the preamble of claim 16, a vacuum transport chamber for disk-shaped workpieces according to that of claim 17 and finally a vacuum treatment plant with such a vacuum transport chamber according to the preamble of claim 29.
  • Sputter chambers of the type mentioned at the outset are known from US Pat. No. 4,818,561 and US Pat. No. 4,664,935.
  • the central axis of the sputter source is arranged at an oblique angle with respect to an axis of rotation of a substrate carrier.
  • the substrate carrier is driven to rotate about the substrate carrier axis.
  • This sputtering chamber achieves coating uniformities of better than ⁇ 4% on wafers, the diameters of which can be up to 200 mm.
  • sputtering chamber according to the invention according to the characterizing part of claim 1, namely in that the sputtering source is a magnetron sputtering source.
  • the sputtering surface of the target is removed essentially uniformly in the case of a conventional sputtering source, this is completely different in the case of magnetron sputtering sources. Due to the self-contained tunnel-shaped magnetic field built up above the sputter surface of the target by the magnetron sputter sources, a circumferential erosion trench results on the sputter surface, which varies the directional characteristic of the dusted target material with increasing dusting time. If several tunnel fields are provided, erosion ditches may run all around.
  • Magnetron sputter sources certainly result in higher dusting and thus also coating rates than conventional sputter sources, but are considerably more critical with regard to the uniformity of the layer thicknesses that can be achieved. It is all the more astonishing that the use of a magnetron sputtering source in accordance with the invention in the sputtering chamber in accordance with the invention not only achieves a higher coating rate and thus shorter coating times, but also, in addition, coating thickness uniformities which are at least as good, even significantly better, are achieved. than this with the aforementioned Sputtering chambers according to the mentioned writings is apparently achievable.
  • a vacuum transport chamber which is in itself designed for short transport cycles and is inventive, is proposed, which, according to the wording of claims 29 and 30, can be ideally combined with the sputtering chamber according to the invention to form a vacuum treatment system with extremely short Transport cycles, further, in particular in preferred embodiments of the transport chamber according to the invention, leads to extremely short infeed and outfeed cycles of substrates to be coated or coated.
  • the sputter chamber according to the invention, transport arms and the systems according to the invention are particularly suitable for the coating of optical data storage substrates, furthermore of masters for the production of such optical data storage disks or of piezoelectric wafers or wafers for the semiconductor production.
  • FIG. 2 the top view of a substrate carrier arrangement, as is provided on the sputter chamber according to the invention according to FIG. 1, for defining the conditions with regard to substrates deposited thereon;
  • FIG. 6 schematically, in side view and partially broken, an inventive vacuum treatment plant with an inventive sputtering chamber in one embodiment variant
  • 7 a plan view of a vacuum treatment system according to the invention, constructed in principle like the system according to FIG. 6, with a plurality of treatment stations and an entry / exit lock;
  • a sputter chamber according to the invention is shown schematically in FIG. 1. It comprises a magnetron sputtering source 1. Above the sputtering surface 3 of a (not shown) target arrangement of the magnetron sputtering source 1, the circumferential, tunnel-shaped magnetron magnetic field H, which is self-contained about the central axis Z of the source 1, is shown schematically. In supervision, i.e. When viewed in the direction of the central axis Z, the sputtering surface 3 of the magnetron source 1 can be rectangular, square, elliptical, etc., but is preferably rotationally symmetrical with respect to the central axis Z.
  • the central axis Z lies in a plane of symmetry of the sputtering surface 3 under supervision.
  • the sputtering surface in its new state referred to as the new sputtering surface, can be at least essentially flat or define a concave surface.
  • a single, tunnel-shaped, self-contained magnetic field H rotating around the central axis Z can be provided, two or more.
  • the one or more envisaged magnetron fields H which revolve around the central axis Z in a closed manner, can also be designed to be stationary in time or to vary in time such as by providing moving magnet arrangements below the target arrangement with permanent and / or electromagnets or generated by time-selectively controlled electromagnets.
  • the sputtering chamber has a substrate carrier 5 which, driven - 6 - is rotatable about a substrate carrier axis A.
  • the substrate carrier 5 is designed in such a way that it can accommodate a single substrate 7, preferably centered on the substrate carrier axis A, or, preferably likewise centered, a plurality of substrates 7a, FIG. 2.
  • One substrate 7 or the plurality 7a can thereby support the substrate carrier 5 quite and as shown in Fig. 2 at 7 1 or 7a 'overlap.
  • sputtering chamber it is also entirely possible on the sputtering chamber according to the invention to coat differently shaped substrates, such as square or rectangular sputter coatings.
  • the magnetron sputtering process can be reactive or non-reactive and the magnetron sputtering source can be operated with DC, DC + AC, with pulsed DC or with pure AC, with AC being able to be selected in the HF range.
  • the central axis Z and the substrate support axis A are oblique to one another. They do not necessarily intersect.
  • the central axis Z of the source 1 and the substrate carrier axis A intersect at least almost.
  • the two axes Z and A mentioned intersect or are skewed towards one another, in any case the two preferably form an angle ⁇ for which the following applies:
  • an angle ⁇ 45 ° is particularly preferred.
  • the location L of the smallest distance from the central axis Z and the substrate carrier axis A is preferably at least approximated on the center of the substrate carrier 5, more preferably on the surface to be coated of a - centered - substrate 7, 7 '.
  • the sputtering source according to the invention can be arranged in any orientation in space.
  • the projection of the substrate surface onto a plane E z perpendicular to the central axis Z is preferably smaller than the projection of the new sputtering surface onto this plane E z .
  • Fig. 3 is further qualitative that formed during operation on the sputtering surface and rotating around the central axis Z.
  • the diameter ⁇ r of the projection of a rotationally symmetrical sputtering surface onto the plane E z and said distance D preferably applies
  • the diameter ⁇ s and the sputtering surface or sputtering surface projection diameter ⁇ r preferably apply
  • the specified dimensioning regulations result in an optimal utilization of the material sputtered from the target 4 to the material deposited on the substrate or substrates, namely of at least 10%.
  • deviations in layer thickness along the coated substrate surfaces of at most ⁇ 1% can be achieved without special precautions having to be taken, in particular on a flat round target, with regard to the formation of the erosion trenches.
  • the substrate holder is preferably designed for substrate diameters of at least 75 mm, for the treatment of wafers for semiconductor production for the reception of wafers with diameters between 150 and 300 mm.
  • two or more sources 10a, 10b can act simultaneously or alternately on the same substrate carrier 5 or the substrates placed thereon. This makes it possible, for example, to deposit alloys while complying with the requirements mentioned at the outset, or to add further compounds with the possibility of also sputtering reactively.
  • the source-specific coating properties can be adjusted by precisely positioning the substrate carrier 5 in the Z and X direction.
  • the substrate carrier 5 again schematically shows a further preferred embodiment of the sputter source according to the invention.
  • the magnetron source 1 and the substrate carrier 5 or substrates placed thereon close one in the processing position Process space PR by substrate carrier 5 or a substrate nestling itself so far against side walls 22 of the vacuum chamber that the free rotary movement ⁇ is still guaranteed.
  • the substrate carrier 5 can not only be driven into the aforementioned rotational movement ⁇ , but can also preferably be raised or lowered linearly into the processing position.
  • FIG. 6 schematically shows a first embodiment variant of a vacuum treatment system according to the invention with at least one sputtering chamber 20 according to the invention.
  • One, two or more (see FIG. 10) transport arms 29 protrude from the axis of rotation B with at least one radial component with respect to the axis B and carry each substrate carrier 31.
  • the substrate carriers 31 can be driven out as shown by the double arrow F. , in particular brought into the processing position or retrieved, and further rotated - as explained above - about the axis A of the substrate carrier 31.
  • FIG. 7 shows a top view of a system analogous to that of FIG. 6 with several treatment stations, of which at least one is a sputtering chamber according to the invention.
  • At least one lock chamber 33 is provided on the transport chamber 29 directly or via further transport chambers, by means of which the substrates to be treated can be removed from the ambient atmosphere.
  • Sphere introduced in a vacuum or removed from the vacuum into the surrounding atmosphere. From the point of introduction, the substrates are fed to a sputter coating station according to the invention, such as station 21 of FIG. 6, through one or more transport devices, possibly after having undergone further treatment steps.
  • FIG. 8 shows, on the one hand, a transport chamber per se according to the invention, combined with a magnetron sputtering chamber according to the invention of the type explained above, thereby forming a system according to the invention on the other hand.
  • FIG. 9 shows a sectional illustration along line II-II through the arrangement according to FIG. 8.
  • the combination of the transport chamber and lock chamber to be described later with the above-described magnetron sputtering chamber results in a highly compact system configuration with short
  • the vacuum transport chamber 41 has an interior space 43 which is delimited on the one hand by a base plate 45 and on the other hand by a side wall structure 47 and a cover structure 49 opposite the base plate 45.
  • the inner surface of the cover structure 49 can preferably be spaced from the inner surface of the base plate 45 d be spaced, which is preferably at most the same as the thickness D of the base plate 45, preferably and, as shown, even significantly less.
  • Workpiece pass-through openings 51 are provided in the cover structure 49 of the transport chamber according to the invention, two of which are in the preferred embodiment shown in FIGS. 8 and 9. Of course, more than two of the openings 51 mentioned can also be provided.
  • a transport device 57 acts in the transport chamber according to the invention, the preferred construction of which can be seen in particular from FIG. 9. Flanged laterally to the base plate 45 or to the side wall structure 47, a rotary axis housing 53 is provided, in which the drive rotary axis 55 of the transport device 57 is mounted.
  • the axis of rotation 55 oriented perpendicular to the inner surface of the base plate 45 carries, in the preferred embodiment of the transport chamber according to the invention, a transport trowel 59 with a handle 60 and a plate-like workpiece holder 61 as the transport device 57.
  • the transport trowel 59 is, as shown in FIG. 9 , pivoted from a first pivot position, in which the workpiece holder 61 is aligned with one of the two openings 51, into the second position shown in dashed lines, in which the workpiece holder 61 is aligned with the second of the openings 51 mentioned.
  • the axis of rotation 55 of the transport device 57 is arranged offset with respect to a connecting line of the central opening axis Z 5i shown in FIG. 9. Furthermore, the openings 51 on the transport chamber according to the invention are so close to one another that - as can be seen in particular from FIG. 8 - there is only just enough space in between, as will be explained below, a processing station at one of the two Flange or arrange openings.
  • a lock chamber is integrated at one opening 51.
  • One opening, 51a is provided with a cover 65 which, as can be seen in FIG. 8, is motor-driven about a pivot axis 67 is pivotable. This axis is preferably located between the openings 51.
  • the cover 65 seals with seals 69 against the outer border parts of the opening 51a on the cover structure 49, which seals 69 may be clamped in the closed state by the linear motorized cover drive to be described later.
  • a seal arrangement is provided on the inner opening border surface of the cover structure 49, preferably in the form of a hydraulically, but preferably a pneumatically actuatable, expandable seal 71, which is pressurized via a connecting piece 73.
  • the seal 71 is pressed in a sealing manner against the border area of the workpiece holder 61.
  • the workpiece holder 61 is relocated on the base plate side, in particular in its peripheral area.
  • this abutment takes place by means of a further circumferential, hydraulically, but preferably pneumatically actuated or expandable seal 75 which is pressurized via one or more connections 77.
  • the circumferential seals 71 and 75 each on the inner surface of the base plate and cover structure, may lie opposite one another, but may also be offset, in any case, between them, when pressurized, they hold the workpiece holder 61 in a sealing manner.
  • the seal 75 seals off a remaining chamber volume 79 between the underside of the workpiece holder 61 and the inner surface of the base plate 45.
  • This volume and the actual lock chamber between the closed cover 65 and the peripherally sealed upper side of the workpiece holder 61 is determined by a Pumped out center opening 81 (see also FIG. 9) on the workpiece holder 61 and a pump connection piece 83, preferably centered with respect to the opening axis Z 51 , on the base plate 45.
  • the cover 65 is indented towards the workpiece holder 61 to such an extent that its inner surface does not just touch a workpiece 85 held on the holder 61.
  • the pump nozzle 83 reaches through to the lock chamber volume above the workpiece unhindered through this center opening of the workpiece. If the disk-shaped workpiece is designed without a center opening, radial connecting channels (not shown) in the workpiece-facing surface of the workpiece holder 61 can improve this penetration, for example a network of radial grooves.
  • the preferred, highly compact vacuum treatment system shown in FIGS. 8 and 9 uses the transport chamber according to the invention with only two openings 51, namely openings 51a and 51b. While, as has been explained, a small-volume lock chamber is integrated at the opening 51a, a workpiece treatment station is flanged onto the second opening 51b.
  • the sputtering station 80 according to the invention is mounted on the opening 51b.
  • the central axis Z s of the sputtering source 80 is inclined away from the other opening 51a such that the linear drive 83 for the pivoting movement of the cover 65 can be mounted on the mounting flange 82 for the inclined sputtering source 80.
  • a central part 84 can be lifted off the workpiece holder 61.
  • a lifting and rotary drive 86 is mounted on the base plate 45, aligned with the axis Z 5 i b . If the workpiece holder 61 is centered in the opening 51b, then with the drive 86, as shown with F in FIG. 8, the workpiece 85 is raised with the central part 84 in the processing position with respect to the sputtering source 80 and at the same time, as shown with ⁇ , rotated.
  • the sputtering source 80 is mounted so that it can pivot about an axis 87, which axis 87 lies opposite the axis 67 of the cover 65 with respect to the opening 51b and is parallel in this regard. It is thereby achieved that the sputter source 80 can be folded down on the flange 82 without impairing the cover drive 83, such as for maintenance purposes or to replace the target, as is shown in FIG. 8 with ⁇ .
  • a highly compact transport path-optimized, structurally simple system or chamber is created, which enables a high throughput while realizing highly uniform coating layer thicknesses. It is particularly suitable for the transport or treatment of workpieces in the form of circular disks, in particular for storage disks, very particularly for the treatment of optical storage disks.
  • Magnetron source ARQ920G source with NiV7- sold by the applicant
  • Target diameter 155 mm
  • Sputtering power 500 W or 1 kW

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Optical Record Carriers (AREA)

Abstract

Un support de substrat (5) est monté de manière à être entraîné en rotation autour d'un axe (A) dans une chambre à pulvérisation cathodique. Une source magnétron est montée dans la chambre à pulvérisation cathodique au moyen d'un axe central (Z) incliné d'un angle ( beta ) par rapport à l'axe de rotation du support de substrat (5).
PCT/CH2001/000020 2000-01-18 2001-01-12 Chambre a pulverisation cathodique et chambre de transport a vide, et installations de traitement du vide comportant des chambres de ce type Ceased WO2001053561A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
HK03101795.2A HK1051056A1 (zh) 2000-01-18 2001-01-12 溅射室、真空传输室和带有这类室的真空处理装置
JP2001553418A JP5059269B2 (ja) 2000-01-18 2001-01-12 スパッタチャンバならびに真空輸送チャンバおよびこれらのチャンバを備えた真空処理装置
EP01900067A EP1250471A1 (fr) 2000-01-18 2001-01-12 Chambre a pulverisation cathodique et chambre de transport a vide, et installations de traitement du vide comportant des chambres de ce type

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH912000 2000-01-18
CH0091/00 2000-01-18

Publications (1)

Publication Number Publication Date
WO2001053561A1 true WO2001053561A1 (fr) 2001-07-26

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PCT/CH2001/000020 Ceased WO2001053561A1 (fr) 2000-01-18 2001-01-12 Chambre a pulverisation cathodique et chambre de transport a vide, et installations de traitement du vide comportant des chambres de ce type

Country Status (4)

Country Link
EP (1) EP1250471A1 (fr)
JP (1) JP5059269B2 (fr)
HK (1) HK1051056A1 (fr)
WO (1) WO2001053561A1 (fr)

Cited By (1)

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DE102010053722A1 (de) * 2010-11-30 2012-05-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Herstellung von Deckelektroden auf organischen elektronischen Elementen

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DE102012015802A1 (de) * 2012-08-10 2014-02-13 Thyssenkrupp Uhde Gmbh Verfahren zur Herstellung von Elektrolysezellen-Kontaktstreifen
JP6783551B2 (ja) * 2016-05-20 2020-11-11 アルバック成膜株式会社 マスクブランクスの製造方法
DE102019132526B4 (de) * 2019-01-15 2025-10-02 Asus Resources Pte. Ltd. Beschichtungsmaschine

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EP0273550A1 (fr) * 1986-12-04 1988-07-06 Machine Technology Inc. Appareil et procédés de dépôt et d'égalisation de surface
EP0312694A1 (fr) * 1987-10-17 1989-04-26 Leybold Aktiengesellschaft Appareil suivant le principe à carrousel pour revêtir des substrats
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EP0449227A2 (fr) * 1990-03-30 1991-10-02 Sony Corporation Appareillage de pulvérisation cathodique
DE4104592A1 (de) * 1991-02-14 1992-08-20 Siemens Ag Verfahren zur herstellung einer hochtemperatursupraleiter-schicht auf einem silizium-substrat
US5415729A (en) * 1992-02-12 1995-05-16 Balzers Aktiengesellschaft Vacuum treatment apparatus
JPH10121237A (ja) * 1996-10-11 1998-05-12 Sony Corp スパッタ装置

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See also references of EP1250471A1 *

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010053722A1 (de) * 2010-11-30 2012-05-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Herstellung von Deckelektroden auf organischen elektronischen Elementen

Also Published As

Publication number Publication date
JP2003520297A (ja) 2003-07-02
HK1051056A1 (zh) 2003-07-18
JP5059269B2 (ja) 2012-10-24
EP1250471A1 (fr) 2002-10-23

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