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WO2000038213A3 - Physical vapor deposition of semiconducting and insulating materials - Google Patents

Physical vapor deposition of semiconducting and insulating materials Download PDF

Info

Publication number
WO2000038213A3
WO2000038213A3 PCT/US1999/030476 US9930476W WO0038213A3 WO 2000038213 A3 WO2000038213 A3 WO 2000038213A3 US 9930476 W US9930476 W US 9930476W WO 0038213 A3 WO0038213 A3 WO 0038213A3
Authority
WO
WIPO (PCT)
Prior art keywords
target
substrate
bias
chamber
physical vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1999/030476
Other languages
French (fr)
Other versions
WO2000038213A2 (en
Inventor
Visweswaren Sivaramakrishnan
Vicente Lim
Kaushal K Singh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to EP99968156A priority Critical patent/EP1141997A2/en
Priority to KR1020017007925A priority patent/KR20010089674A/en
Priority to JP2000590192A priority patent/JP2002533574A/en
Publication of WO2000038213A2 publication Critical patent/WO2000038213A2/en
Publication of WO2000038213A3 publication Critical patent/WO2000038213A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

The invention provides an apparatus for depositing semiconducting, insulating, and particularly, high dielectric constant (HDC) material, such as barium strontium titanate, on a substrate through reactive sputtering. The apparatus comprises a physical vapor deposition chamber having an asymmetric bipolar pulsed direct current power source supplying a first bias to a target and a second bias to the substrate support member in the chamber. The pulsed direct current power source supplies an electrical waveform comprising a negative deposition voltage that attracts the argon ions to cause sputtering from the target and a reverse small positive neutralization voltage to cause charge neutralisation of the target that eliminates arcing and micro-arcing on the target surface. Preferably, the first bias is synchronized with the second bias for the deposition period and the neutralization period. A floating-ground shield surrounds the processing region between the target and the substrate. A first gast inlet introduces a gas for the plasma through the top portion of the chamber, and a second gas inlet introduces a reaction gas adjacent the substrate surface to react with the sputtered material to form the HDC film on the substrate.
PCT/US1999/030476 1998-12-21 1999-12-20 Physical vapor deposition of semiconducting and insulating materials Ceased WO2000038213A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP99968156A EP1141997A2 (en) 1998-12-21 1999-12-20 Physical vapor deposition of semiconducting and insulating materials
KR1020017007925A KR20010089674A (en) 1998-12-21 1999-12-20 Physical vapor deposition of semiconducting and insulating materials
JP2000590192A JP2002533574A (en) 1998-12-21 1999-12-20 Physical vapor deposition equipment for semiconductive and insulating materials

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21918798A 1998-12-21 1998-12-21
US09/219,187 1998-12-21

Publications (2)

Publication Number Publication Date
WO2000038213A2 WO2000038213A2 (en) 2000-06-29
WO2000038213A3 true WO2000038213A3 (en) 2000-09-14

Family

ID=22818241

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/030476 Ceased WO2000038213A2 (en) 1998-12-21 1999-12-20 Physical vapor deposition of semiconducting and insulating materials

Country Status (5)

Country Link
EP (1) EP1141997A2 (en)
JP (1) JP2002533574A (en)
KR (1) KR20010089674A (en)
TW (1) TW454245B (en)
WO (1) WO2000038213A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6461483B1 (en) * 2000-03-10 2002-10-08 Applied Materials, Inc. Method and apparatus for performing high pressure physical vapor deposition
KR100417112B1 (en) * 2001-08-21 2004-02-05 (주) 브이에스아이 A Pulse Type Metal Plasma Ion Source Generating Device
KR101116105B1 (en) * 2004-05-21 2012-02-13 주식회사 케이티 Method for manufacturing titanium oxide film for film capacitor
KR100784381B1 (en) * 2004-07-23 2007-12-11 삼성전자주식회사 Deposition apparatus and method
TWI554630B (en) * 2010-07-02 2016-10-21 應用材料股份有限公司 Deposition apparatus and method for reducing deposition asymmetry
JP6972427B2 (en) * 2019-11-28 2021-11-24 株式会社アルバック Film formation method
KR20230151538A (en) 2021-03-02 2023-11-01 어플라이드 머티어리얼스, 인코포레이티드 Pulsed DC power for film deposition
WO2025030405A1 (en) * 2023-08-09 2025-02-13 北京时代全芯存储技术股份有限公司 Physical vapor deposition method for eliminating arcing defects

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3700633C1 (en) * 1987-01-12 1988-05-26 Reinar Dr Gruen Method and device for the gentle coating of electrically conductive objects by means of plasma
EP0818803A2 (en) * 1996-07-10 1998-01-14 Applied Materials, Inc. Electrically floating shield in a plasma reactor
US5789071A (en) * 1992-11-09 1998-08-04 Northwestern University Multilayer oxide coatings

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3700633C1 (en) * 1987-01-12 1988-05-26 Reinar Dr Gruen Method and device for the gentle coating of electrically conductive objects by means of plasma
US5789071A (en) * 1992-11-09 1998-08-04 Northwestern University Multilayer oxide coatings
EP0818803A2 (en) * 1996-07-10 1998-01-14 Applied Materials, Inc. Electrically floating shield in a plasma reactor

Also Published As

Publication number Publication date
EP1141997A2 (en) 2001-10-10
JP2002533574A (en) 2002-10-08
KR20010089674A (en) 2001-10-08
TW454245B (en) 2001-09-11
WO2000038213A2 (en) 2000-06-29

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