WO2000005816A1 - High-speed current switch with complementary stages - Google Patents
High-speed current switch with complementary stages Download PDFInfo
- Publication number
- WO2000005816A1 WO2000005816A1 PCT/EP1999/004931 EP9904931W WO0005816A1 WO 2000005816 A1 WO2000005816 A1 WO 2000005816A1 EP 9904931 W EP9904931 W EP 9904931W WO 0005816 A1 WO0005816 A1 WO 0005816A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- terminal
- transistor
- current
- coupled
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
Definitions
- the invention relates to a high-speed current switch, and particularly to such a switch that does not require an external bias-voltage source.
- European Patent Application 722221 published on 17 July 1996, describes a high-speed current switch that needs no external bias source for transistors in the switch. As described in that patent, an external reference bias source with a low output impedance had been used in prior art current switches for rapidly charging and discharging intrinsic capacitances in the current switch, thereby decreasing the settling time of the switched current. This increases the cost of the switch and, in integrated circuit implementations, also increases the number and complexity of conductors that must be provided for external connections. European Patent Application 722221 proposes relatively simple current-switch circuitry that does not require such an external bias source.
- a current switch for producing a square wave output current in response to a square wave input signal comprises: • a plurality of terminals including a first input terminal for receiving the input signal; an output terminal for producing the square wave output current; first and second power supply terminals; and a biasing terminal; • a first current-switching stage including first and second transistors; the first transistor having a first terminal coupled to the biasing terminal, a second terminal coupled to the output terminal, and a third terminal; the second transistor having a first terminal coupled to the first input terminal, a second terminal coupled to the third terminal of the first transistor, and a third terminal coupled to the second power supply terminal; • a second current-switching stage including third and fourth transistors; the third transistor having a first terminal coupled to the first input terminal, a second terminal coupled to the output terminal, and a third terminal; the fourth transistor having having a first terminal coupled to the first input terminal, a second terminal coupled to the output terminal, and a third terminal; the fourth transistor having
- a biasing circuit including a current source for supplying a predetermined current to the biasing terminal and at least one transistor having first and second terminals coupled to the biasing terminal, and a third terminal coupled to one of the first and second power supply terminals, the at least one transistor forming a current mirror with at least one of the first and fourth transistors.
- Figure la is a schematic diagram of a first embodiment of a current switch in accordance with the invention.
- Figures lb and lc are graphs illustrating operation of the first embodiment.
- Figure 2a is a schematic diagram of a second embodiment of a current switch in accordance with the invention.
- Figure 2b is a graph illustrating operation of the second embodiment.
- the first embodiment of the current switch illustrated in Figure la, includes a first current-switching stage having transistors Ml 3 and Ml 4, a complementary second current-switching stage having transistors M23 and M24, and a biasing circuit having a current source 110, a first pair of transistors Mi l, M12, and a second pair of transistors M21, M22.
- all of the transistors are NMOS type.
- the current switch also includes an input terminal Tl for the application of a switching signal, an output terminal T2 for receiving the current to be switched, and terminals T3 and T4 for connection to positive and negative supply voltages V 4" and V " , respectively.
- the transistors Ml 3 and M14 are mutually electrically connected in series, with the drain terminal of transistor M13 connected to terminal T2, the source terminal of transistor Ml 3 connected to the drain terminal of transistor M14, and the source terminal of transistor M14 connected to terminal T4.
- the transistors M23 and M24 are mutually electrically connected in series, with the drain terminal of transistor M23 connected to terminal T2, the source terminal of transistor M23 connected to the drain terminal of transistor M24, and the source terminal of transistor M24 connected to terminal T4.
- the first and second current-switching stages are electrically connected in parallel with each other between the output terminal T2 and the negative supply terminal T4.
- the gate terminals of transistors M14 and M23 are electrically connected to the input terminal Tl.
- the current source 110 is electrically connected between terminal T3 and a terminal T5.
- This current source is shown symbolically, but is formed by any current source circuit (even a single transistor) which produces a predetermined constant current ilO.
- the first pair of transistors Mil, M12 are electrically connected in series, with the drain and gate terminals of transistor Ml 1 mutually connected to terminal T5 (thereby causing this transistor to operate as an MOS diode), the source terminal of transistor Ml 1 connected to the drain terminal of transistor M12, and the source terminal of transistor M12 connected to terminal T4.
- Transistor M 12 operates essentially as a resistor.
- the second pair of transistors M21, M22 are electrically connected in series, with the drain terminal of transistor M21 connected to terminal T5, the source terminal of transistor M21 connected to the drain terminal of transistor M22, and the source terminal of transistor M22 connected to terminal T4.
- transistor M21 operates as a resistor
- transistor M22 operates as an MOS diode.
- terminal T5 is electrically connected to the gate terminals of transistors Mil and M22, in the biasing circuit, and to the gate terminals of transistors M13 and M24, in the first and second current-switching stages.
- the gates of the transistors M12 and M21, in the biasing circuit are electrically connected to terminal T3.
- the pairs of transistors Ml 1, M12 and M21, M22 in the biasing circuit have gate dimensions which are proportionate to those of respective transistors M13, M14 and M23, M24 in the first and second switching stages.
- Each of the current-switching stages has an ON state, when it is conducting current, and an OFF state, when it is not conducting current.
- the biasing circuit functions to define the steady-state currents passing through the first and second current-switching stages, when each of these stages is in its ON state. More particularly, transistor Mil operates together with transistor Ml 3 of the first current-switching stage to form a first current mirror. This current mirror functions to maintain a predetermined ratio between the currents flowing in these two transistors. As is well known in the art, this ratio is primarily determined by the relative dimensions (i.e. the lengths and widths) of the gates in the two transistors.
- transistor M22 operates together with transistor M24 of the second current-switching stage to form a second current mirror, which also functions to maintain a predetermined ratio between the currents flowing in these two transistors.
- Transistors M12 and M21 in the biasing circuit are added to make this circuit symmetrical with the current-switching stages. Note that each of these transistors is electrically connected to terminal T3, to which the supply voltage V + is applied, and each functions essentially as a resistor.
- each of comparable transistors M14 and M23 in the first and second current-switching stages is electrically connected to terminal Tl, to which the switching signal V c , having a predetermined voltage level, is applied to switch transistors M14 and M23 into their ON states.
- the transistors Mi l, M22 in the biasing circuit have gate dimensions which are matched to each other.
- the transistors Ml 3, M24 in the current- switching stages have gate dimensions which are matched to each other, but are substantially larger than those of the transistors in the biasing circuit.
- the gate dimensions of the remaining transistors M12, M21, M14, M23 are not critical.
- the gate dimensions of all four of the transistors in the current-switching stages preferably are selected to minimize parasitic capacitances and to establish acceptably high OFF state resistances and acceptably low ON state resistances.
- the gate dimensions of the four biasing circuit transistors are matched to each other, the gate dimensions of the four current-switching stage transistors are matched to each other, and the relative gate lengths/widths of the current-switching stage transistors and the biasing circuit transistors are 400/1.2 and 12.5/1.2, respectively. Because of the larger gate dimensions of the transistors in the current-switching stages, the current carried by each of current-switching stage transistors Ml 3 and M24 is approximately one-hundred times the current carried by each of biasing circuit transistors Ml 1 and M22 when the same bias voltage is applied to the gates of all four of these transistors.
- the output terminal T2 of the current switch is used to sink current from an apparatus which requires a close-to-ideal square current pulse for optimum operation.
- Some examples of such apparatus are high-speed logic circuits, precision current mirrors, integrators and A/D converters.
- the switching signal V c in the form of a square- wave voltage pulse
- the first and second current-switching stages cooperate to provide a square-wave current pulse i out at the output terminal T2.
- These two stages are mutually complementary, in the sense that spurious currents and charging delays caused by intrinsic capacitances in the transistors of the two stages cancel each other.
- the complementary operation of the first and second current-switching stages is illustrated in figures lb and lc.
- Figure lb is a graph of an input signal V c over a period of time
- Figure lc is a graph of three different current pulses over the same period of time.
- the three currents are the output current i 0 _t, a current il passing through the first current-switching stage, and a current i2 passing through the second current- switching stage.
- the first stage current il increases gradually, but the second stage current i2 overshoots the steady state value and then decreases gradually.
- the first stage current il decreases more gradually to the zero level than the second stage current i2.
- the second embodiment of the current switch is a simplification of the first embodiment. It is substantially identical to the first embodiment, except that the biasing circuit has been simplified to include only the current source 110 electrically connected in series with an NMOS transistor Mi l' between terminal T3 and terminal T4.
- the gate terminal of transistor Ml 1' is electrically connected to the gates of transistors M13 and M24, such that these three transistors form a current mirror.
- the gate length of transistor Mil' must be approximately twice that of transistor Mi l, if they have identical gate widths.
- Figure 2b illustrates the operation of the simplified embodiment of figure 2a. Note that the only significant difference is a slightly lower steady-state current level for the output current i 0 _ t .
Landscapes
- Electronic Switches (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000561706A JP2002521905A (en) | 1998-07-20 | 1999-07-10 | High-speed current switch with complementary stages |
| EP99934684A EP1038351A1 (en) | 1998-07-20 | 1999-07-10 | High-speed current switch with complementary stages |
| KR1020007002837A KR20010024088A (en) | 1998-07-20 | 1999-07-10 | High-speed current switch with complementary stages |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9333198P | 1998-07-20 | 1998-07-20 | |
| US60/093,331 | 1998-07-20 | ||
| US09/218,546 | 1998-12-22 | ||
| US09/218,546 US6100738A (en) | 1998-12-22 | 1998-12-22 | High-speed current switch with complementary stages |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2000005816A1 true WO2000005816A1 (en) | 2000-02-03 |
Family
ID=26787410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP1999/004931 Ceased WO2000005816A1 (en) | 1998-07-20 | 1999-07-10 | High-speed current switch with complementary stages |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP1038351A1 (en) |
| JP (1) | JP2002521905A (en) |
| KR (1) | KR20010024088A (en) |
| WO (1) | WO2000005816A1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5126734A (en) * | 1989-07-27 | 1992-06-30 | Sgs-Thomson Microelectronics S.A. | Switching matrix crosspoint |
| US5517152A (en) * | 1991-09-27 | 1996-05-14 | Mitsubishi Denki Kabushiki Kaisha | Current source circuit and operating method thereof |
| US5619160A (en) * | 1994-06-27 | 1997-04-08 | Sgs-Thomson Microelectronics S.A. | Control circuit for setting a bias source at partial stand-by |
-
1999
- 1999-07-10 EP EP99934684A patent/EP1038351A1/en not_active Withdrawn
- 1999-07-10 JP JP2000561706A patent/JP2002521905A/en active Pending
- 1999-07-10 WO PCT/EP1999/004931 patent/WO2000005816A1/en not_active Ceased
- 1999-07-10 KR KR1020007002837A patent/KR20010024088A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5126734A (en) * | 1989-07-27 | 1992-06-30 | Sgs-Thomson Microelectronics S.A. | Switching matrix crosspoint |
| US5517152A (en) * | 1991-09-27 | 1996-05-14 | Mitsubishi Denki Kabushiki Kaisha | Current source circuit and operating method thereof |
| US5619160A (en) * | 1994-06-27 | 1997-04-08 | Sgs-Thomson Microelectronics S.A. | Control circuit for setting a bias source at partial stand-by |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010024088A (en) | 2001-03-26 |
| JP2002521905A (en) | 2002-07-16 |
| EP1038351A1 (en) | 2000-09-27 |
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