WO2000074222A1 - H-type bridge circuit and integrated circuit - Google Patents
H-type bridge circuit and integrated circuit Download PDFInfo
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- WO2000074222A1 WO2000074222A1 PCT/JP1999/002807 JP9902807W WO0074222A1 WO 2000074222 A1 WO2000074222 A1 WO 2000074222A1 JP 9902807 W JP9902807 W JP 9902807W WO 0074222 A1 WO0074222 A1 WO 0074222A1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
- H02P7/00—Arrangements for regulating or controlling the speed or torque of electric DC motors
- H02P7/03—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors
- H02P7/04—Arrangements for regulating or controlling the speed or torque of electric DC motors for controlling the direction of rotation of DC motors by means of a H-bridge circuit
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/1555—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only for the generation of a regulated current to a load whose impedance is substantially inductive
Definitions
- the present invention relates to an H-type bridge circuit controlled by PWM (Pulse Width Modulation) and a semiconductor integrated circuit device equipped with the H-type bridge circuit.
- PWM Pulse Width Modulation
- the present invention relates to a technology that is effective for generating positive and negative output currents.
- Fig. 15 shows a conceptual diagram of a conventional PWM-controlled H-shaped bridge circuit
- Fig. 16 shows its operation explanatory diagram.
- a conventional H-type bridge circuit using a PWM is: Control signal DIR that determines the direction of the current flowing to the load and control that controls the magnitude of the current with the duty ratio (Hals duty) of the Hals signal. ), At the time of DIRL (low level), the transistors Q 2 and Q 3 of the ⁇ -type bridge circuit shown in FIG. 15 are turned off, and the transistor Q 1 is turned on. When Q 4 is turned on by the PWM signal, which is controlled by the PWM signal, the transistor Q 1 loads the current I ⁇ through the load through the transistor Q 4.
- the inventor of the present application has studied the use of the H-type bridge circuit of the PWM control as described above for position control.
- the problem is that the output current becomes zero.
- Focus on the optical disk (recording medium) such as a CD-ROM, DVD, MO, etc., for example, the focus and track of an optical disk device (disk drive) that reproduces information or self-records.
- Driver's, hard disk drive (HDD) actuator-the output current is controlled around zero.
- the switching of the M ⁇ SFET (absolute gate field effect transistor) and the bilateral transistor is less than the delay. Therefore, the duty ratio of the Hals width is shorter than the turn-on delay of the above transistor.
- the transistor When the transistor is turned on, the transistor cannot be turned on, and when the transistor is turned on, it is shorter than the turn-off delay, and the time cannot be controlled. Will not be able to follow
- the delay time is usually about 1 microsecond. If you want to control the current to 1 / 100th of full scale (duty 100%), the PWM carrier cycle must be set to 100 microseconds: 2 milliseconds. In this case, the output transistor cannot follow the current change at a frequency of 1 kilohertz or more.
- the delay time of the output transistor of the M 0 SFET is about 1/10 of that of the biplane, but it is still 10 KH z becomes the limit
- Japanese Patent Application Laid-Open No. 8322949 as a focus drive used in an optical word self-recording / reproducing apparatus that uses a PWM circuit as a drive circuit.
- a drive microscale is not output every PWM frame, but an output microscale according to the input data is generated only once every few times to allow a desired microcurrent to flow to the load. Yes Therefore, it is necessary to move between tracks at high speed and run in a high speed.
- drivers such as DROM and truck drivers such as truck driver.
- an object of the present invention is to provide a PWM control H-type bridge circuit which enables high response and high-precision output control.
- the PWM control H-type bridge circuit is provided on one semiconductor substrate.
- Another object of the present invention is to provide a structured semiconductor integrated circuit device. Further objects and novel features will be apparent from the description of this specification and the accompanying drawings.
- a second one which outputs the first voltage and the second ff in response to an input signal in an additive manner.
- a PWM-controlled control signal (hereinafter also referred to as a PWM signal) input to the two output circuits )
- the PWM signal As an in-phase signal and the output current flowing through the load means to be zero, and based on such a state, the relative Hals width duty difference of the PWMi word applied manually to the first and second output circuits.
- an output current having a current value corresponding to the difference is caused to flow in the positive or negative direction to the load means.
- FIG. 1 is a basic circuit diagram showing one embodiment of an H-type bridge circuit under PWM control according to the present invention
- FIG. 2 is a waveform diagram for explaining the operation of the P-M-controlled H-type bridge circuit of FIG. 1;
- FIG. 3 is a circuit diagram showing one embodiment of an H-type bridge circuit controlled by PWM according to the present invention.
- FIG. 4 is a circuit diagram showing another embodiment of the H-type bridge circuit under PWM control according to the present invention.
- FIG. 5 is a circuit diagram showing another embodiment of the H-type bridge circuit under PWM control according to the present invention.
- FIG. 6 shows another example of the PWM controlled ⁇ -bridge circuit according to the present invention.
- FIG. 2 is a circuit diagram showing one embodiment
- FIG. 7 is a block diagram showing another embodiment of the H-type bridge circuit under PWM control according to the present invention.
- FIG. 8 is a waveform diagram for explaining the operation of the H-type bridge circuit of FIG. 7;
- FIG. 9 is a circuit diagram showing one embodiment of a booster circuit used in the H-type bridge circuit of FIG.
- FIG. 10 is a waveform diagram for explaining the operation of the booster circuit of FIG. 9;
- FIG. 11 is a waveform diagram for explaining the operation of the PWM-controlled H-type bridge circuit according to the present invention.
- FIG. 12 is a block diagram showing an embodiment of a semiconductor integrated circuit device constituting an H-bridge circuit of PWM control to which the present invention is applied.
- FIG. 13 is a block diagram showing the embodiment shown in FIG. FIG. 1 is an overall block diagram of a control system using a semiconductor integrated circuit device.
- FIG. 14 is a schematic configuration diagram of a CD player on which the semiconductor integrated circuit device of FIG. 12 is mounted,
- FIG. 15 is a block diagram showing an example of a conventional H-type bridge circuit controlled by PWM.
- FIG. 16 is a waveform diagram for explaining the operation of the H-type bridge circuit shown in FIG. 15 in the best mode for carrying out the invention
- FIG. 1 shows an H-type bridge circuit under PWM control according to the present invention.
- a circuit diagram for explaining the basic concept is shown.
- a first CMOS output circuit consisting of a P-channel MOSFET Q1 and an N-channel MOSFET Q2 (between the power supply voltage VC C and the circuit ground potential GND)
- the first CMOS output circuit is provided with the first input signal PMW1 supplied to the gates of the P-channel MOSFET Q1 and the N-channel MOSFET Q2.
- the first CM0S output circuit generates a high-level output signal such as the power supply voltage VCC and a low-level output signal such as the circuit ground potential GND from the output terminal P0UT in response to the input signal PWM1.
- CMOS output circuit (a second inverter circuit) comprising a P-channel type MOS FET TQ 3 and an N-channel type MOS FET Q 4 is provided. ) Is provided, and the output terminal responds to the manual signal PWM2.
- a high-level output signal such as power supply voltage VC C and a low-level output signal such as circuit ground potential GND from N OUT
- the two impeller circuits should be two vertical lines, and the load should be likened to the letter H in the alphabet with a horizontal line connecting the respective midpoints (the output terminals POUT and NOUT).
- such a configuration is referred to as an H-type bridge circuit.
- the H-type bridge circuit is controlled using a PWM input signal, and the turn-on / turn-off of the switch element of each output circuit is controlled even in a minute current region where the current Io flowing through the load is close to zero.
- the two output circuits constituting the ⁇ ⁇ -type bridge circuit in other words, the half-bridge circuit (MOS FETQ 1 and Q 2 and Q 3 and Q 4) are completely different from the conventional PWM control, that is, the input signal PWM supplied to each input terminal of the above two output circuits 1 and PWM2 are not the same PWM signal as in the past, but are two signals that change independently.
- the meaning of the independently changing means that two human power signals PWM 1 Or, in one of the PWM 2, it means that the pulse width duty may be fixed. That is, the current I o corresponding to the difference between the relative Hals width duty of the two human power signals PWM1 and PWM2.
- FIG. 2 shows a timing diagram of one embodiment for explaining the PWM control according to the present invention.
- the H-type pre-circuit shown in FIG. Fig. 2 (A) shows the case where the current I o flowing through the load is zero (I o 0)
- Fig. 2 (B) shows the case where the current I ⁇ ⁇ ⁇ flowing through the load is positive (I ⁇ ⁇ 0)
- the current I ⁇ flowing through the load is shown as a negative field (I o-.0) force ⁇ respectively.
- the positive or negative direction of the current depends on the output terminal.
- the input signals PWM 1 and PWM 2 supplied to the two half-bridge circuits have a Hanoleth width duty of 50 (3 ⁇ 4 and in-phase, and the output terminal POUT Since N OUT also changes in phase and both are always at the same potential in time, no current Io flows through the load.At this time, the switch MOSFETs Q 1 and Q 2 and Q 3 and Q 4 corresponds to the signal change of the input signals PWM 1 and 2 and the output terminal including these delay times, even if there is a turn-on / turn-off delay time.
- POUT and NO UT Since the voltage force ⁇ changes and both ends of the load are set to the same potential as described above, it is possible to easily and accurately create a state where the current I0 flowing through the load is zero.
- the Hals width duty of the output P 0 UT should be slightly larger than 50%, and the output NO UT This can be achieved by making the Hals width duty slightly smaller than 50% .
- the Hals width duty of the output P OUT is slightly larger than 50%, the average of the output P ⁇ UT is correspondingly increased.
- the output voltage rises slightly above the midpoint voltage (VCCZ 2) and the Hals width duty of the self-output NOUT is slightly smaller than 50 5
- the average output NOUT ⁇ drops slightly from the midpoint voltage (VCC / 2), and a minute current (I ⁇ 0) corresponding to the minute voltage difference flows.
- the pulse width duty is controlled based on 50%. That is, the switching delay due to the PWMi signal is so strong that it appears near full scale where one duty is 100% and the other is 0%, and at full scale output maximum condition. However, since the output current itself is large, No problem.
- the Hals width duty of the input signal PWM2 is fixed at 50%
- the Hals width duty of the input signal PWM1 is 50% to 100% centering on 50 ° 6.
- the load may be varied up to 50% to 0%.
- the load is applied at the maximum: VC CZ 2 Since the voltage is not applied, the load drive current I ⁇ is as described above.
- the range of the drive current of the load is small L
- the Hals width duty of the input signal PWM 2 is fixed to 50 ( 3 ⁇ 4), the circuit can be simplified and the power consumption can be reduced.
- the human power (the Hals width duty of the signal PWM2 is fixed at 250 ′, and the input Hals width duty of the PWM 1 is 25 ° 25 ⁇ ⁇ 1 100 % And 25% to 0 '3 ⁇ 4.
- the load in the forward direction has a drive current I ⁇ ⁇ corresponding to the maximum voltage of VC C 3 4 4.
- the drive current I ⁇ corresponding to the voltage of VCC / 4 can also be applied.
- the width can be set variously according to the direction of the drive current
- FIG. 3 shows a circuit diagram of an embodiment of a ⁇ -shaped pre-soji circuit that is PWM controlled according to the present invention.
- a human-powered terminal of the ⁇ -shaped bridge circuit is provided.
- the basic circuit diagram of the PWMi symbol generation circuit that forms the supplied PWMi symbol is shown.
- the PWM signal generating circuit of this embodiment corresponds to the timing diagram shown in FIG. 2. That is, when the input signal is zero, the human-power signal PWM 1 supplied to the two half bridges (output circuits) And PWM2 power, 50% loss width duty, and change the voltage of the output terminals POUT and NOUT in the same phase to make the current flowing to the load zero as the same phase.
- the direction of the current flowing to the load in response to the positive or negative change of the input signal, and the current value are used to supply the power supply voltage VCC to the load at full scale (::-VCC).
- the Hals width duty of the input signals PWM1 and PWM2 is changed complementarily
- Words PWM 1 and PWM 2 are formed by two operational amplifiers (computing width circuits) ⁇ 1 and ⁇ 2 and two concentrators (voltage comparison circuits) VC 1 and VC 2
- the signal V in and the reference voltage V ref are supplied to the obeamp OP 1 to operate as an inverting amplifier circuit to form an output voltage V 1 having a negative phase.
- set the resistance values of the human resistance R 3 and the feedback resistance R 4 to be equal, and operate as an inverting amplifier circuit with a voltage gain of 1 to output the output voltage V 2 in the opposite phase to the output voltage V 1.
- the ohmic amplifier OP1 amplifies the input signal Vin with a voltage gain corresponding to a resistance ratio between the input resistor R1 and the feedback resistor R2, if necessary, by increasing the resistance values of the resistors R1 and R2.
- the circuit may be operated as a buffer circuit (Voltage-follower circuit) with the voltage gain being equal to 1. Therefore, when the output impedance of the circuit forming the human-power signal Vin is sufficiently small, the above-mentioned ohmic amplifier may be used.
- OP 1 can be omitted
- the output voltage V 1 of the above-mentioned operational amplifier 0 P 1 is supplied to the inverting input of the circuit VC 1.
- the voltage V2 is supplied to the inverting input (-) of the con- verter VC2.
- the PWM carrier signal (triangular wave) is applied to the in-phase input (-) of these con- verters VC1 and VC2.
- the DC level of the carrier ⁇ symbol is equal to the reference voltage V ref.
- FIG. 4 is a circuit diagram of another embodiment of the PWM-controlled H-shaped bridge circuit according to the present invention. In this embodiment, the variation of the operating voltage VCC in the H-shaped bridge circuit is described. In other words, in the embodiment shown in Fig. 3, the PWM control is performed independently of the power supply voltage VCC of the H-type bridge circuit.
- the average output voltage of the PWM-controlled output POUT and NOT is the average output voltage if the VCC expressed by the product of the power supply voltage VCC and the Hals width duty fluctuates, and the current flowing to the load fluctuates.
- a current sense resistor R s is connected in series with the load, the voltage between both ends of R s is level-shifted by the output amplifier P 3, and the output is fed back to the output pin 0 P 1. Is sufficiently smaller than the DC resistance of the load. The current flowing through the current sense resistor R s is sufficiently smoothed by the self-inductance LL and DC resistance RL of the load.
- the voltage R s, I R across R s is amplified (amplification rate R 6, 'R 5) by the amplifier 0 ⁇ 3 and at the same time, the reference voltage V ref is the reference U o 0 and the output OP 3 output The voltage of the output OP 3 is level-shifted to the voltage V ref), and the output of the OP 3 is fed back to the inverting input of the OP 1 via the feedback resistor R 2.
- the power supply voltage VCC fluctuates.
- the current I o flowing through the load can be kept constant.
- the pulse width duty of the positive-phase output POUT is 25 ⁇
- the Halse width duty of the negative-phase output N0UT is 15%.
- the difference is 50 0 (that is, the average voltage applied to the load is 0.5 V CC. If the power supply voltage VCC fluctuates by -'- 10 VC, it becomes VC-10%.
- FIG. 5 is a circuit diagram of another embodiment of the PWM-controlled H-type bridge circuit according to the present invention.
- the operating voltage VC of the H-type bridge circuit is shown.
- C-power ⁇ H-bridge circuit that level-shifts the output voltage POUT and NOUT of the H-bridge circuit that is fed back using an ohmic amplifier OP3, and returns negatively to the input amplifier P1.
- the average voltages of the positive phase outputs P 0 UT and NOUT are VP and VN
- the following relational expressions (.2) and (3) are established.
- Capacitances C1 and C2 act as filters for removing the PWM carrier signal from the feedback loop.
- FIG. 6 shows a circuit diagram of another embodiment of the PWM-controlled H-type bridge circuit according to the present invention. Also in this embodiment, the operating voltage VCC of the H-type bridge circuit is fed back. In this embodiment, only the voltage of the positive-phase output POUT is level-shifted by the ohmic amplifier P3 and negatively fed back. The negative-phase output NOUT changes in the negative phase with respect to the positive-phase output POUT.
- FIG. 7 shows a block diagram of another embodiment of the PWM-controlled H-type bridge circuit according to the present invention, in which one capacitor can be eliminated and one carrier can be reduced.
- the H-type bridge circuit is constituted by an N-channel MOS FET.
- the switch element on the power supply voltage VCC side is replaced with the P-channel M0 SFET as described above, A type MOS SFET is used.
- the layout on a semiconductor integrated circuit can be simplified.
- the output transistor of the H-type bridge circuit is an N-channel MOS FET for both the upper and lower arms (switch elements) as in this embodiment
- the N-channel MOS FET TQ 1 on the upper arm side is used.
- Q3 drive requires booster circuits CP1 and CP2.
- the drive voltage applied to that gate is set to a boosted voltage VBST that is equal to or higher than VCC-Vth (Vth is the threshold voltage of MOS FET Q1, Q3).
- Vth is the threshold voltage of MOS FET Q1, Q3).
- the booster circuits CP 1 and CP 2 are provided for this purpose, and the delay circuits DL 1 and DL 2 are provided to avoid shoot-through current due to simultaneous turning on of the MOSFETs Q 1 and Q 2 and Q 3 and Q 4 on the upper and lower arms.
- MOS FETs Q1 and Q2, where 1 is longer than the off-delay Td2 will be described as an example.Driving signal When PWM1 changes from L to high level H, such a change
- the voltage VGSQ1 applied between the gate and source of the MOS FETQ1 rises. The rise is set to the delay time corresponding to the turn-on delay Td1, and the fall of the voltage VGSQ2 applied between the gate and the source of the MOS FETQ2 is set to the delay time corresponding to the above-mentioned turn-off delay Td2. Is set.
- the MOSFET Q2 changes to the self-delay time Td2.
- the MOSFET is turned off at an earlier timing, and thereafter, the MOSFET Q1 is turned on with a delay corresponding to the above-mentioned delay time Td1, so that the through current through the MOSFETs Q1 and Q2 is obtained.
- the MOSFET Q 1 turns off at an earlier timing corresponding to the delay time Td 1, and then the MOSFET Q 2 Since the transistor is turned on with a delay corresponding to the delay time Td1, the through current does not occur through the MOSFETs Q1 and Q2.
- MO S F E T Q 1 and Q 2 provide a large output current to be supplied to the load.
- the input gate capacitance is set to a relatively large capacitance value.
- pre-drivers PD1 and PD2 composed of CMOS inverter circuits are provided, although not particularly limited.
- the free driver PD 1 which forms the input signal supplied to the gate of the MOS FET TQ 1 on the power supply voltage VCC, has its operating voltage set to the boosted voltage VB ST formed by the boosting circuit CP 1.
- the high level supplied to the gate of the MOSFETQ 1 is set to a high level corresponding to the boosted voltage VBST.
- Circuits for driving the MOSFETQ3 and Q4 of the upper and lower arms of the other half bridge circuit of the H-type bridge circuit also include the same delay circuit DL2, free drivers PD3, PD4, and booster circuit CP as described above. 2 power ⁇ established
- FIG. 9 is a circuit diagram of one embodiment of a booster circuit used in the PWM-controlled H-shaped bridge circuit of FIG. 7 in this embodiment.
- a boosted voltage is formed by a charge-hoff circuit.
- the capacitor C3 is precharged with the power supply voltage VCC, and the boosted voltage is formed by adding the power supply voltage VSS of the opening and closing circuit to the charged voltage.
- a P-channel type M ⁇ SF ETQ 13 which uses the power supply voltage VCC for the above-mentioned cache C 3 is used as a gate of the MOS FE TQ 13.
- a resistor R 10 is provided between the gate of the MOS FET Q 13, which is turned on by the low-level output signal formed in 12, and the boosted node of the capacitor C 3.
- Such a switch control method of the precharge MO SFE TQ 13 is also used for the switch control of the output switch MOSFET Q 14 for transmitting the boosted voltage to the output capacitor C 4.
- the gate of TQ15 is set to the low level, the switch MOSFETQ15 is turned on, and the boosted voltage V12 (VCC: VSS) is transmitted to the output capacitor C4.
- the MOSFE TQ14 is turned off.
- the gate voltage of the MOS FETQ14 increases through the resistor R11 in response to the boosted voltage VBST. 0 Turn off SFETQ 1 5
- FIG. 10 shows a waveform diagram for explaining the operation of the booster circuit of FIG. 9 above.
- Clock No. Signal When the CLK is at a low level, an inverter circuit IV 1 which operates as a driver The output voltage V 10 is set to the high level (VSS). Therefore, the MOSFETQ 11 is turned on, the output voltage V 11 is set to the low level (GND), and the ⁇ 0 SFETQ 12 is turned on. As a result, the gate voltage V 13 of the MOSFETQ 13 is pulled to a low level.This causes the MOS FETQ 13 to be turned on, and the boosted node V 12 of the capacitor C 3 is connected to the power supply voltage VCC.
- the MOS SFE TQ 14 is turned off and the ⁇ 0 gate voltage V 14 of the SFETQ 15 is boosted by the resistor R 1. Conveyed through 1 and turned off
- the MOSFETQ 10 is turned on, Output 3 ⁇ 4iiV 11 is set to high level (VCC) and MOS FETQ 12 is turned off.
- the voltage V12 on the boost side of the capacitor C3 is set to a boosted voltage such as VCCVSS.
- the low level of the output voltage V1 2 is turned off, and the gate voltage of MOSFET Q13 also rises in response to the voltage rise of V12 in response to the above-described boosting operation, and the MOSFET Q13 is turned off.
- the boosted voltage VCCVSS formed by the bootstrap action of the power supply voltage does not leak to the power supply voltage VCC side. Since the gate voltage V14 of the MOSFET Q15 is set to low level (GND), the MOSFET Q14 is turned on, and the boosted voltage VCC-VSS is converted to the output capacitance C4. Tell
- the constant current sources I 1 and I 2 are provided on the source side of the MOSFETs Q 12 and Q 14. Therefore, when the MOSFETs Q 12 and Q 14 are turned on, the P-channel type Set the gate voltage and source voltage of MOS FETs Q13 and Q15 to R10x11 and R11x12, and set the gate-source voltage to the minimum required voltage difference. It is used to make the switching to the off-state by the resistors R10 and R11 faster. The above operation is repeated according to the change of the clock signal CLK. As a result, the boosted voltage VBST is set to a boosted voltage such as VCCVSS. In the embodiment of FIG. 7, the boosting circuits CP 1 and CP 2 are provided in each half-bridge circuit. To form the operating voltage supplied to both drivers PD 1 and PD 3
- FIG. 11 shows a waveform diagram for explaining the operation of the H-type bridge circuit controlled by PWM according to the present invention.
- a sine wave is applied to in At the output voltage VI of the output PI (ie, the inverted input (-) of VC1)
- the phase-inverted waveform is applied to the output voltage V2 of the operational amplifier OP2 (that is, the inverted input (-) of the VC2).
- Fig. 12 shows the PWM control H-type bridge circuit to which the present invention is applied.
- a process diagram of one embodiment of a semiconductor integrated circuit device equipped with a semiconductor device is shown.
- the semiconductor integrated circuit device of this embodiment is directed to a CDR OM DVD.
- Sindle SPN, Focus FC S, Track TRK, Thread SLD, Tray TRY are integrated into one chip.
- the target point is set to zero as in position control.
- the focus FC S, the track TRK, the thread S LD and the tray TRY requiring the position control or the rotation control should be the PWM controlled actuator according to the present invention as described above.
- the booster circuit forms the operating voltage VBST of the upper-arm driver in the half-bridge circuit composed of the N-channel MOS FETs constituting each of the above-mentioned actuator drivers.
- the clock carrier circuit generates the PWM carrier signal consisting of a triangular wave using the clock signal CLK formed by the clock generator CL KO SC.
- This triangular wave (PWM carrier signal) is composed of all five signals including the above-mentioned sinedle.
- the circuit can be simplified by sharing such a circuit shared by the PWM control circuit.
- the load is driven by PWM
- the power consumption is small, and the heat generation is small with the power and the low power consumption.
- the main drivers necessary for driving the CDR0M and DVD can be formed by one semiconductor integrated circuit device, and the mounting restrictions can be eliminated. Further, such a device can be further miniaturized. Further, since the power consumption is low, the battery life can be prolonged when the device is mounted on a portable electronic device driven by a battery.
- FIG. 13 shows a control using the semiconductor integrated circuit device shown in FIG. FIG. 2 is a block diagram showing the entire control system.
- the mechanism of the CD-ROMZ DVD includes the above-mentioned Shindle, Focus, Track, Thread, Tray Motor, Combo, Microprocessor MPU that controls the entire system, and Servo It is composed of a digital signal processor DSP that performs control.
- DSP digital signal processor
- FIG. 14 is a schematic configuration diagram of a slide feed mechanism of a CD player on which the above-described semiconductor integrated circuit device under PWM control according to the present invention is mounted.
- the slide feed mechanism shown in the figure is of a linear motor type and is suitable for a CDROM in which access performance is important.
- the structure is supported by one shaft.
- the optical pickup is mounted on the moving body.
- the drive coil is mounted on the moving body, and the two magnets are mounted on the side yoke. The polarities of the two magnets are the same.
- the magnetic flux exits the magnet and forms the roof of the center yoke side yoke, and a gear is formed between the magnet and the center yoke.
- the drive coil is located at the position of the gear, and the current sensor generates a force according to Fleming's law when a current is applied to make the moving body move holly.
- a speed sensor is located on the opposite side of the drive coil.
- the linear motor is provided to monitor the moving speed of the linear motor.
- the linear motor is driven to set a certain speed profile to a target track, and a feedback or moving mechanism for moving the motor is operated as it is.
- the above speed sensor is used to rake
- the outline of the access method is as follows.
- the number of tracks is calculated from the time of de-Q, the number of tracks to be jumped is calculated by comparing the number of tracks to be jumped, and the number of tracks to be jumped is calculated by comparing the numbers of tracks.
- the focus servo is on, the optical system is moved quickly by the linear motor,
- the lens mechanism is a two-axis device with two degrees of freedom in the focus direction and the tracking direction.
- Upper word yourself track set Bok is performed by controlling the tools de S L D
- the power supply voltage can be used effectively while realizing the high responsiveness and high-precision output control. Is obtained
- An input signal having a constant Hals width duty is supplied to the second input terminal of the second output circuit, and the input signal is supplied to the second input terminal to the first input terminal of the first output circuit.
- the first and second output circuits are composed of a CMOS circuit composed of a ⁇ channel type MOS FET and a ⁇ channel type MOSF ⁇ ⁇ ⁇ ⁇ , thereby simplifying a circuit for forming an input signal. The effect that can be obtained
- the first and second output circuits are composed of MOchannel type MO SF ⁇ , and the power supply voltage (the ⁇ 0 SF ⁇ ⁇ ⁇ ⁇ ⁇ ⁇
- the first and third switch elements are configured as described above. ⁇
- the first and second and the third and fourth switches are provided between the first and second input terminals and the ⁇ 0 SF ⁇ gates constituting the respective switch elements.
- the third driver uses the boosted voltage, which is higher than the first voltage by the threshold voltage or more, as the operating voltage, thereby preventing the generation of DC current and increasing the power supply voltage. The effect of realizing effective PWM control can be obtained.
- the first input that receives the human power signal and is current amplified (the first inverting amplifier circuit that forms the signal, the current is amplified by receiving the output signal, and the phase of the first input is reversed.
- a second inverting amplifier circuit for forming a second input signal is provided, the first input signal and the second input signal are received at one input terminal, and the other input terminal receives a PWM carrier signal.
- a current detecting resistor element is provided between the load means and the second output terminal of the second output circuit, and a detection voltage formed by the current detecting resistor element is received, and the first inversion is performed.
- the load is smoothed by applying a feedback circuit that forms a return signal corresponding to the voltage difference and negatively feeds back to the first inverting input circuit.
- the current flowing through the power supply can be controlled without being affected by the power supply voltage.
- the voltage at one end of the self-load means is smoothed, and a feedback signal corresponding to a difference voltage between the first voltage and the midpoint voltage between the first voltage and the second voltage is formed to form the first inverting input.
- I 4 The effect of this is that while controlling the current that is not affected by the power supply voltage, it is possible to reduce the number of capacitors provided for removing the PWM carrier signal provided on the feedback roof and the number of external terminals for connecting it to one.
- a so-called H-type bridge circuit in which a load is connected between the output terminals of the first and second output circuits that output the first voltage and the second voltage complementarily in response to the input signal
- the output current flowing through the load means is set to zero by using the PWM signals input to the two output circuits as in-phase signals, and the first and second output circuits are manually operated based on such a state.
- the above-mentioned PWM control circuit By forming the PWM carrier that supplies the PWM carrier in common to the symbol generation circuit on one semiconductor integrated circuit (semiconductor substrate), the circuit can be simplified by sharing the circuit. CDROM and DVD mounted can be downsized.
- MOSFETs flow current along the main surface of the semiconductor substrate, L, so-called horizontal M 0 SFETs, as well as flow current perpendicular to the main surface of the semiconductor substrate, and
- the switch element constituting the H-type bridge circuit which may be a MOSFET, is not limited to the above-mentioned M 0 SFET, but can be replaced with another switch element such as a bayora type transistor.
- the circuit that forms the PWM signal supplied to the H-type bridge circuit includes a driving circuit (H-type bridge circuit) that can adopt various embodiments and a PWM circuit that includes a PWM control circuit that drives the driving circuit.
- the control system is the first
- the present invention is widely applied to an H-type bridge circuit using a PWM control circuit that forms positive and negative output currents centering around zero corresponding to a target position, such as positioning control, and a semiconductor integrated circuit device mounted thereon.
- a PWM control circuit that forms positive and negative output currents centering around zero corresponding to a target position, such as positioning control, and a semiconductor integrated circuit device mounted thereon.
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Abstract
Description
明 細 書 Specification
H型プリ ッジ回路と半導体集積回路装置 技術分野 H-type bridge circuit and semiconductor integrated circuit device
この発明は、 PWM ( P ulse Width Modulation ; ハルス幅変調 ) 制御される H型プリッジ回路とそれが搭載された半導体集積回路装置 に関し、 例えば位置決め制御のように目標位置に対応した零を中心とし て正負の出力電流を形成するものに利用して有効な技術に関するもので ある 背景技術 The present invention relates to an H-type bridge circuit controlled by PWM (Pulse Width Modulation) and a semiconductor integrated circuit device equipped with the H-type bridge circuit. The present invention relates to a technology that is effective for generating positive and negative output currents.
第 1 5図に従来の PWM制御される H型プリ ッジ回路の概念図を示す また第 1 6図にその動作説明図を示す 従来の P WMを用いた H型ブ リ ッジ回路は、 負荷に流れる電流の向きを決める制御信号 D I Rとその 電流の大きさをハルス信号のデューティ比 (ハルスデューティ) で制御 する制御 ί言号 P WMの 2つの信号で制御される 第 1 6図 (Α ) に示す ように D I R L (ロウレベル) のとき、 第 1 5図に示した Η型ブリツ ジ回路のトランジスタ Q 2と Q 3はォフ状態に、 トランジスタ Q 1がォ ン状態にされる そして、 トランジスタ Q 4は P WM信号で制御される P WMi言号により Q 4がォン状態にされると、 トランジスタ Q 1 負 荷 トランジスタ Q 4の経路で負荷に電流 I υが流れる 上記 P WM信 号により上記卜ランジス夕 Q 4がオフ状態になると、 負荷のィンダクタ ンスに貯えられたェネルギ一によってトランジスタ Q 3のボディダイォ —ド、 及び上記オン状態のトランジスタ Q 1及び負荷の経路で回生電流 が流れる したがって負荷には正相 (ホジティブ) 出力点 P O U Tから 逆相 (ネガティブ) 出力点 N O U Tの向きに電流 I oが流れる, 電流 の大きさは上記制御信号 P WMのハルスデューティで制御される ,; 第 1 6図 (B ) に示すように上記制御信号 D I Rがハイレベル (H ) になると、 上記第 1 5図のトランジスタ Q 3がォン状態に、 トランジス タ Q 1と Q 4はオフ状態にされる 上記トランジスタ Q 2が制御信号 P WMにより制御される, これにより、 上記の場合とは逆に、 負荷には出 力点 N 0 U Tから P 0 U Tの向きの電流 I oが流れる Fig. 15 shows a conceptual diagram of a conventional PWM-controlled H-shaped bridge circuit, and Fig. 16 shows its operation explanatory diagram.A conventional H-type bridge circuit using a PWM is: Control signal DIR that determines the direction of the current flowing to the load and control that controls the magnitude of the current with the duty ratio (Hals duty) of the Hals signal. ), At the time of DIRL (low level), the transistors Q 2 and Q 3 of the Η-type bridge circuit shown in FIG. 15 are turned off, and the transistor Q 1 is turned on. When Q 4 is turned on by the PWM signal, which is controlled by the PWM signal, the transistor Q 1 loads the current I に through the load through the transistor Q 4. When the transistor Q4 is turned off, the inductance of the load The stored energy causes the body diode of the transistor Q3, and the regenerative current to flow in the path of the transistor Q1 and the load in the on-state, so that the load has a positive-phase (hositive) output point POUT Negative phase (negative) The current Io flows in the direction of the output point NOUT, and the magnitude of the current is controlled by the Hals duty of the control signal PWM, as shown in FIG. 16 (B). When DIR goes high (H), transistor Q3 in FIG. 15 is turned on, and transistors Q1 and Q4 are turned off. Transistor Q2 is controlled by control signal PWM. Therefore, contrary to the above case, the load flows a current Io from the output point N 0 UT to the P 0 UT.
本願発明者にお L、ては、 上記のような P WM制御の H型ブリッジ回路 を用いて位置制御に用いることを検討した, この位置制御において、 問 題になるのは出力電流が零に近いところの制御である 例えば C D - R O M、 D V D、 M Oなどの光 (磁気) ディスク (記録媒体) に対して、 情報の再生又は言己録を行う光デスク装置 (ディスク ドライブ) のフォー カス、 トラック ドライバ'、 H D D ( Hard D isk Drive) のァクチユエ ―夕 ドラィ は、 出力電流が零を中心に制御される これらのドラィバ の P WM制御を上記のような従来回路で行った場合、 微小電流を制御し ようとすると限りなく零に近 、ハノレスデューティで制御しなければなら ない The inventor of the present application has studied the use of the H-type bridge circuit of the PWM control as described above for position control. In this position control, the problem is that the output current becomes zero. Focus on the optical disk (recording medium) such as a CD-ROM, DVD, MO, etc., for example, the focus and track of an optical disk device (disk drive) that reproduces information or self-records. Driver's, hard disk drive (HDD) actuator-the output current is controlled around zero.When the PWM control of these drivers is performed by the conventional circuit as described above, a very small current is controlled. When trying to do so, it must be near zero and control must be performed with Hanoles duty
しかしながら、 M◦ S F E T (絶緣ゲ一卜型電界効果卜ランジス夕) やバイホ一ラ型トランジスタのスイッチングにはディ レイカ <ί半う この ため、 上記トランジスタのターンオンディ レイより短いハルス幅のデュ —ティではトランジス夕はターンオンできない, またトランジスタがー 旦オンすると、 ターンオフディ レイより短 、時間の制御もできなくなる それでも P WMキヤリァの周期を長くすれば微小電流の制御はできる 、 速 L、電流の変化に追従できなくなってしまう However, the switching of the M◦ SFET (absolute gate field effect transistor) and the bilateral transistor is less than the delay. Therefore, the duty ratio of the Hals width is shorter than the turn-on delay of the above transistor. When the transistor is turned on, the transistor cannot be turned on, and when the transistor is turned on, it is shorter than the turn-off delay, and the time cannot be controlled. Will not be able to follow
上記 Η型プリッジ回路を構成する出力トランジスタ力くバイホ一ラ型ト ランジス夕の場合、 ディ レイタイムは通常約 1マイクロ秒もある 出力 電流をフルスケール (デューティ 1 0 0 %) の 1 0 0 0分の 1まで制御 しょうとすれば、 P WMキャリアの周期は 1 0 0 0マイクロ秒二: 1 ミリ 秒に設定しなければならない これでは 1キロへルツ以上の周波数の電 流変化には追従できなくなってしまう 上記出力トランジスタが M 0 S F E Tの場台のディ レイタイムはバイホ一ラの 1 0分の 1程度だがそれ でも 1 0 K H zが限界になる このように従来回路では出力電流ゼロを 中心の高応答性での高精度の制御が不可能であり、 それ故上記のような C D R O M、 D V D、 M Oなどの光デスク装置のフォーカス、 トラッ ク ドライバ、 H D Dのァクチユエ一タドライバのような高速応答性が要 求される位置制御には適用できない このため、 従来のこれらの位置制 御には、 専ら丁十ログ回路を用いるものである しかし、 アナログ回路 では、 消費電流が大きいばかりか、 力、かる大きな消費電流に伴って発生 する発熱に対して、 素子保護の観点から放熱を効率良く行う等実-^!;の 対策が不可欠になるものである In the case of the bi-transistor transistor, the delay time is usually about 1 microsecond. If you want to control the current to 1 / 100th of full scale (duty 100%), the PWM carrier cycle must be set to 100 microseconds: 2 milliseconds. In this case, the output transistor cannot follow the current change at a frequency of 1 kilohertz or more.The delay time of the output transistor of the M 0 SFET is about 1/10 of that of the biplane, but it is still 10 KH z becomes the limit As described above, in the conventional circuit, it is impossible to perform high-precision control with high responsiveness centering on zero output current. Therefore, the focus of the optical desk device such as CDROM, DVD, and MO as described above. It cannot be applied to position control that requires high-speed response, such as track drivers and HDD actuator drivers. For this reason, conventional position control uses exclusively a log circuit. But analog times On the road, not only is the current consumption large, but also the power and the heat generated by the large current consumption are efficiently dissipated from the viewpoint of element protection. ; Measures are indispensable
なお、 光学式言己録再生装置に使用するフォーカス.駆動回路に P WM回 路を利用したものとして特開平 8 3 2 9 4 8 9号公報等がある しか しながら、 このフォーカス.駆動回路は、 微小電流制御時には PWMフレ ーム毎に駆動ハルスを出力するのではなく、 数回に一回だけ入力データ に応じた出力ハルスを発生して負荷に所望の微小電流を流すようにする ものである したがって、 トラック間を高速にしかもラング厶柊動する 必要のある c D R O M等のフオーカス、 トラック ドラィパ'等のァクチ ユエ一夕ドライバには適用できない Note that there is Japanese Patent Application Laid-Open No. 8322949 as a focus drive used in an optical word self-recording / reproducing apparatus that uses a PWM circuit as a drive circuit. At the time of microcurrent control, a drive microscale is not output every PWM frame, but an output microscale according to the input data is generated only once every few times to allow a desired microcurrent to flow to the load. Yes Therefore, it is necessary to move between tracks at high speed and run in a high speed. C It is not applicable to drivers such as DROM and truck drivers such as truck driver.
したがって、 この発明は、 高応答性と高精度の出力制御を可能にした P WM制御の H型プリッジ回路を提供することを目的としている 上記 PWM制御の H型ブリッジ回路を 1つの半導体基板上に構成した半導体 集積回路装置を提供することを他の目的としている この発明の前記な らびにそのほかの目的と新規な特徴は、 本明細書の記述および添付図面 から明らかになるであろう 発明の開示 Accordingly, an object of the present invention is to provide a PWM control H-type bridge circuit which enables high response and high-precision output control. The PWM control H-type bridge circuit is provided on one semiconductor substrate. Another object of the present invention is to provide a structured semiconductor integrated circuit device. Further objects and novel features will be apparent from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要を簡単に説明 すれば、 下記の通りである すなわち、 入力信号に応答して第 1電圧と 第 2 «ffとを相捕的に出力させる第 1と第 2の出力回路の出力端子間に 負荷を接続してなるいわゆる H型プリッジ回路に対して、 2つの出力回 路に入力される PWM制御された制御信号 (以下、 P WM信号ともいう ) を同相信号として上記負荷手段に流れる出力電流を零とし、 かかる状 態を基準にして上記第 1と第 2の出力回路に人力される P WMi言号の相 対的なハルス幅デューティ差を持たせ、 その差分に対応した電流値の出 力電流を上記負荷手段に正又は負方向に流すようにする 図面の簡単な説明 The outline of a typical one of the inventions disclosed in the present application will be briefly described as follows. That is, a second one which outputs the first voltage and the second ff in response to an input signal in an additive manner. For a so-called H-type bridge circuit in which a load is connected between the output terminals of the first and second output circuits, a PWM-controlled control signal (hereinafter also referred to as a PWM signal) input to the two output circuits ) As an in-phase signal and the output current flowing through the load means to be zero, and based on such a state, the relative Hals width duty difference of the PWMi word applied manually to the first and second output circuits. And an output current having a current value corresponding to the difference is caused to flow in the positive or negative direction to the load means.
第 1図は、 この発明に係る P WM制御される H型プリッジ回路の一実 施例を示す基本的な回路図であり、 FIG. 1 is a basic circuit diagram showing one embodiment of an H-type bridge circuit under PWM control according to the present invention,
第 2図は、 上記第 1図の P 'M制御される H型ブリ ッジ回路の動作を 説明するための波形図であり、 FIG. 2 is a waveform diagram for explaining the operation of the P-M-controlled H-type bridge circuit of FIG. 1;
第 3図は、 この発明に係る P WM制御される H型ブリッジ回路の一実 施例を示す回路図であり、 FIG. 3 is a circuit diagram showing one embodiment of an H-type bridge circuit controlled by PWM according to the present invention;
第 4図は、 この発明に係る P WM制御される H型プリッジ回路の他の —実施例を示す回路図であり、 FIG. 4 is a circuit diagram showing another embodiment of the H-type bridge circuit under PWM control according to the present invention,
第 5図は、 この発明に ί る P WM制御される H型プリッジ回路の他の 一実施例を示す回路図であり、 FIG. 5 is a circuit diagram showing another embodiment of the H-type bridge circuit under PWM control according to the present invention,
第 6図は、 この発明に係る P WM制御される Η型ブリッジ回路の他の 一実施例を示す回路図であり、 FIG. 6 shows another example of the PWM controlled Η-bridge circuit according to the present invention. FIG. 2 is a circuit diagram showing one embodiment,
第 7図は、 この発明に係る P WM制御される H型プリッジ回路の他の 一実施例を示すプロック図であり、 FIG. 7 is a block diagram showing another embodiment of the H-type bridge circuit under PWM control according to the present invention,
第 8図は、 上記第 7図の H型プリッジ回路の動作を説明するための波 形図であり、 FIG. 8 is a waveform diagram for explaining the operation of the H-type bridge circuit of FIG. 7;
第 9図は、 上言己第 7図の H型プリッジ回路に用いられる昇圧回路の一 実施例を示す回路図であり、 FIG. 9 is a circuit diagram showing one embodiment of a booster circuit used in the H-type bridge circuit of FIG.
第 1 0図は、 上記第 9図の昇圧回路の動作を説明するための波形図で あり、 FIG. 10 is a waveform diagram for explaining the operation of the booster circuit of FIG. 9;
第 1 1図は、 この発明に係る PWM制御される H型プリッジ回路の動 作を説明するための波形図であり、 FIG. 11 is a waveform diagram for explaining the operation of the PWM-controlled H-type bridge circuit according to the present invention.
第 1 2図は、 この発明が適用された PWM制御の Hプリッジ回路を構 成する半導体集積回路装置の一実施例を示すプロック図であり、 第 1 3図は、 上記第 1 2図に示した半導体集積回路装置を用 I·、た制御 システ厶の全体ブロック図であり、 FIG. 12 is a block diagram showing an embodiment of a semiconductor integrated circuit device constituting an H-bridge circuit of PWM control to which the present invention is applied. FIG. 13 is a block diagram showing the embodiment shown in FIG. FIG. 1 is an overall block diagram of a control system using a semiconductor integrated circuit device.
第 1 4図は、 上記第 1 2図の半導体集積回路装置が搭載される C Dフ レ一ャの概略構成図であり、 FIG. 14 is a schematic configuration diagram of a CD player on which the semiconductor integrated circuit device of FIG. 12 is mounted,
第 1 5図は、 従来の P WM制御される H型プリッジ回路の一例を示す 構成図であり、 FIG. 15 is a block diagram showing an example of a conventional H-type bridge circuit controlled by PWM.
第 1 6図は、 上記第 1 5図の H型プリッジ回路の動作を説明するため の波形図である 発明を実施するための最良の形態 FIG. 16 is a waveform diagram for explaining the operation of the H-type bridge circuit shown in FIG. 15 in the best mode for carrying out the invention
この発明をより詳細に説述するために、 添付の図面に従つてこれを説 明する BRIEF DESCRIPTION OF THE DRAWINGS The invention will be described in more detail with reference to the accompanying drawings.
第 1図には、 この発明に係る P WM制御の H型プリッジ回路における 基本的概念を説明するための回路図が示されている, 電源電圧 VC Cと 回路の接地電位 GNDとの間に、 Pチャンネル型 MOSFETQ 1と N チャンネル型 MOSFETQ2からなる第 1の CMOS出力回路 (第 1 のインバー夕回路) が設けられる この第 1の CMO S出力回路は、 上 記 Pチャンネル型 MOS FETQ 1と Nチャンネル型 MO S F E T Q 2 のゲートに第 1の入力信号 PMW1が供給される これにより、 上記第 1の C M 0 S出力回路は、 入力信号 P WM 1に応答して出力端子 P 0 U Tから電源電圧 V C Cのようなハイレベルと回路の接地電位 G N Dのよ うなロウレベルの出力信号を形成する 同様に、 上記電源電圧 Vじじと 回路の接地電位 GNDとの間に、 Pチャンネル型 MO S F E TQ 3と N チヤンネル型 MOS FETQ 4からなる第 2の CMOS出力回路 (第 2 のインバ一夕回路) が設けられ、 人力信号 PWM 2に応答して出力端子 N OUTから電源電圧 VC Cのようなハイレベルと回路の接地電位 GN Dのようなロウレベルの出力信号を形成する FIG. 1 shows an H-type bridge circuit under PWM control according to the present invention. A circuit diagram for explaining the basic concept is shown. A first CMOS output circuit consisting of a P-channel MOSFET Q1 and an N-channel MOSFET Q2 (between the power supply voltage VC C and the circuit ground potential GND) The first CMOS output circuit is provided with the first input signal PMW1 supplied to the gates of the P-channel MOSFET Q1 and the N-channel MOSFET Q2. The first CM0S output circuit generates a high-level output signal such as the power supply voltage VCC and a low-level output signal such as the circuit ground potential GND from the output terminal P0UT in response to the input signal PWM1. Similarly, between the power supply voltage V and the circuit ground potential GND, a second CMOS output circuit (a second inverter circuit) comprising a P-channel type MOS FET TQ 3 and an N-channel type MOS FET Q 4 is provided. ) Is provided, and the output terminal responds to the manual signal PWM2. Form a high-level output signal such as power supply voltage VC C and a low-level output signal such as circuit ground potential GND from N OUT
上記の回路においては、 上記 2つのインパー夕回路を縦方向の 2本の 線とし、 負荷をそれぞれの中点 (上記出力端子 POUT及び NOUT) を結ぶ横線とするアルファベッ トの Hの文字に見立てることができるの で、 本願ではかかる構成を H型プリ ッジ回路と呼ぶものである In the above circuit, the two impeller circuits should be two vertical lines, and the load should be likened to the letter H in the alphabet with a horizontal line connecting the respective midpoints (the output terminals POUT and NOUT). In the present application, such a configuration is referred to as an H-type bridge circuit.
本願発明では、 PWM入力信号を用いて上記 H型プリッジ回路を制御 して、 負荷に流れる電流 I oが零に近い微小電流領域でも各出力回路の 前記のようなスィツチ素子におけるターンオン/ターンオフのディ レイ タイ厶に影響されないようにするため次のような工夫がなされている この発明では、 Η型プリ ッジ回路を構成する 2つの出力回路、 言い換 えるならば、 ハ一フブリッジ回路 (MOS FETQ 1と Q 2及び Q 3と Q 4 ) のそれぞれを従来と全く異なり独立に PWM制御する つまり、 上記 2つの出力回路のそれぞれの入力端子に供給される入力信号 PWM 1と PWM2は、 従来のように同じ PWM信号とするのではなく、 それ ぞれが独立に変化する 2つの信号とするものである, この独立に変化と いう意味は、 2つの人力信号 PWM 1又は PWM 2の一方において、 そ の"ルス幅デューティが固定であってもよいことを意味する つまり、 2つの人力信号 PWM1と PWM 2の相対的なハルス幅デューティの差 分に対応した電流 I oを負荷に流すようにすることに本願発明に係る P WM制御の大きな特徴がある According to the present invention, the H-type bridge circuit is controlled using a PWM input signal, and the turn-on / turn-off of the switch element of each output circuit is controlled even in a minute current region where the current Io flowing through the load is close to zero. In order to avoid the influence of the delay time, the following measures have been taken. In this invention, the two output circuits constituting the す る -type bridge circuit, in other words, the half-bridge circuit (MOS FETQ 1 and Q 2 and Q 3 and Q 4) are completely different from the conventional PWM control, that is, the input signal PWM supplied to each input terminal of the above two output circuits 1 and PWM2 are not the same PWM signal as in the past, but are two signals that change independently. The meaning of the independently changing means that two human power signals PWM 1 Or, in one of the PWM 2, it means that the pulse width duty may be fixed. That is, the current I o corresponding to the difference between the relative Hals width duty of the two human power signals PWM1 and PWM2. There is a major feature of the PWM control according to the present invention in that
第 2図には、 この発明に係る PWM制御を説明するための一実施例の タイ ミング図が示されている この実施例では、 前記第 1図に示した H 型プリ '、,ジ回路を用い、 第 2図 (A) には負荷に流れる電流 I oが零の 場合 ( I o 0 ) 、 第 2図 (B) には負荷に流れる電流 I υが正の場合 ( I υ · 0 ) 、 第 2図 (C) には負荷に流れる電流 I υが負の場台 ( I o - .0 ) 力〈それぞれ示されている なお、 電流の正又は負の向きは、 上 記出力端子の記号 POUT (ホジティブアウトフッ ト) と N 0 U T (ネ ガティプアゥ卜プッ 卜) に対応して、 便宜的に出力端子 P 0 U Tから N OUTに向かう方向が正方向であるとし、 その逆を負方向であるとする モータの回転制御では、 正方向が正回転に対応し、 負方向が逆回転に 対応する FIG. 2 shows a timing diagram of one embodiment for explaining the PWM control according to the present invention. In this embodiment, the H-type pre-circuit shown in FIG. Fig. 2 (A) shows the case where the current I o flowing through the load is zero (I o 0), and Fig. 2 (B) shows the case where the current I 流 れ る flowing through the load is positive (I υ · 0) In Fig. 2 (C), the current Iυ flowing through the load is shown as a negative field (I o-.0) force <respectively. The positive or negative direction of the current depends on the output terminal. In correspondence with the symbols POUT (positive output) and N 0 UT (negative output), the direction from output terminal P 0 UT to N OUT is assumed to be positive, and the opposite is assumed to be negative. In the rotation control of the motor, the positive direction corresponds to the forward rotation and the negative direction corresponds to the reverse rotation.
第 2図 (A) に示すように、 2つのハーフブリ ッジ回路に供給される 入力信号 PWM 1と PWM 2力、'ハノレス幅デューティ 50 (¾で、 かつ同相 であるとさ、 出力端子 POUTと N OUTも同相で変化して両者は時間 的には常に同電位であるので負荷には電流 I oが流れない このとき、 2つの フブリッジ回路を構成するスィツチ MOSFETQ 1と Q 2 及び Q 3と Q 4のそれぞれにお L、て、 入力 ί言号 PWM 1と ΡΜΜ 2の信 号変化に対応し、 ターンオン/ターンオフのディ レイタイムがあっても 、 これらのデ丫 レイタイムを含んで上記出力端子 POUTと NO UTの 電圧力《変化して上記のように負荷の両端を同電位にするので、 負荷に流 れる電流 I 0が零の状態を簡単にしかも高い精度で作り出すことができ る. As shown in Fig. 2 (A), the input signals PWM 1 and PWM 2 supplied to the two half-bridge circuits have a Hanoleth width duty of 50 (¾ and in-phase, and the output terminal POUT Since N OUT also changes in phase and both are always at the same potential in time, no current Io flows through the load.At this time, the switch MOSFETs Q 1 and Q 2 and Q 3 and Q 4 corresponds to the signal change of the input signals PWM 1 and 2 and the output terminal including these delay times, even if there is a turn-on / turn-off delay time. POUT and NO UT Since the voltage force << changes and both ends of the load are set to the same potential as described above, it is possible to easily and accurately create a state where the current I0 flowing through the load is zero.
第 2図 (B ) に示すように、 出力 P OUTから出力 NOU Tの向きに 微少電流を流す場合は、 出力 P 0 U Tのハルス幅デューティをわずかに 5 0 %より大きくし、 出力 NO UTのハルス幅デューティをわずかに 5 0 %より小さくすることで達成できる つまり、 上記出力 P OUTのハ ルス幅デュ- ティをわずかに 5 0 %より大きくすると、 それに対応して 出力 P〇 U Tの平均的な出力電圧が中点電圧 ( V C C Z 2 ) より僅かに 上昇し、 上言己出力 NOUTのハルス幅デュ ティをわずかに 5 0 ¾より 小さくすると、 それに対応して出力 N OUTの平均的な出力 «Εが中点 電圧 (V C C / 2 ) より僅かに低下し、 その差分の微小電圧差に対応し た微小電流 ( I υ 0 ) が流れるものとなる As shown in Fig. 2 (B), when a small current flows from the output P OUT to the output NO OUT, the Hals width duty of the output P 0 UT should be slightly larger than 50%, and the output NO UT This can be achieved by making the Hals width duty slightly smaller than 50% .In other words, if the Hals width duty of the output P OUT is slightly larger than 50%, the average of the output P〇 UT is correspondingly increased. If the output voltage rises slightly above the midpoint voltage (VCCZ 2) and the Hals width duty of the self-output NOUT is slightly smaller than 50 5, the average output NOUT Ε drops slightly from the midpoint voltage (VCC / 2), and a minute current (Iυ0) corresponding to the minute voltage difference flows.
第 2図 (C ) に示すように、 上記 (Β) とは逆に出力 N OUTから出 力 P OU Tの向きに微少電流を流す場合は、 出力 P O UTのハルス幅デ ュ -ティをわずかに 5 00)より小さく し、 出力 NOUTのハルス幅デュ ティをわずか!こ 5 0 °bより大きくすることで達成できる これにより 、 上記 (B ) の場合とは逆方向に、 上記両出力 NOUTと P OUTとの 間におけるの平均的な微小電圧差に対応した微小電流 ( I o 0 ) が流 れるものとなる As shown in Fig. 2 (C), when a small current flows from the output N OUT in the direction of the output P OUT, contrary to the above (Β), the Hals width duty of the output P OUT is slightly reduced. 5 0 0) than smaller, thereby to be achieved by larger than Hals width du tee just! This 5 0 ° b of output NOUT, in the direction opposite to the above case (B), the two output NOUT A small current (I o 0) corresponding to the average small voltage difference between POUT and POUT
負荷電流零に相当する PWM信号のハルス幅デューティ 5 0 ¾には出 カトランジス夕のディ レイタイムが上記のようにすでに含まれているの で、 5 0 %を基準に 'ヽルス幅デューティを制御するのは容易である つ まり、 PWMi言号によるスィッチング遅延は、 一方のデューティを 1 0 0 %、 他方を 0 %にするフルスケール付近で現れることになる力く、 フル スケールの出力最大状態では、 出力電流そのものが大きいので実際上問 題になることはない. Since the delay time of the output transient is already included in the Halse width duty of the PWM signal corresponding to zero load current as described above, the pulse width duty is controlled based on 50%. That is, the switching delay due to the PWMi signal is so strong that it appears near full scale where one duty is 100% and the other is 0%, and at full scale output maximum condition. However, since the output current itself is large, No problem.
第 1図において、 例えば入力信号 PWM 2のハルス幅デューティを 5 0%に固定とし、 入力 ί言号 PWM1のハルス幅デューティを 5 0 °6を中 心にして 5 0%〜1 0 0¾と、 5 0 %〜0 %のように変化させるもので あってもよい この場合には、 負荷には最大で: VC CZ 2の電圧し力、 印加されないから、 負荷の駆動電流 I υは前記の場合の 1 ' 2になる 負荷の駆動電流の範囲が小さ L、場合には、 入力信号 PWM 2のハルス幅 デューティを 5 0 (¾に固定として回路の簡素化及び低消費電力化を図る ことができる In FIG. 1, for example, the Hals width duty of the input signal PWM2 is fixed at 50%, and the Hals width duty of the input signal PWM1 is 50% to 100% centering on 50 ° 6. In this case, the load may be varied up to 50% to 0%. In this case, the load is applied at the maximum: VC CZ 2 Since the voltage is not applied, the load drive current I υ is as described above. In the case where the range of the drive current of the load is small L, when the Hals width duty of the input signal PWM 2 is fixed to 50 ( ¾), the circuit can be simplified and the power consumption can be reduced.
第 1図において、 例えば人力 (言号 PWM2のハルス幅デューティを 2 5 0 ' に固定とし、 入力 ί言号 PWM 1のハルス幅デューティを 2 5 。を 中心にして 2 5 °η -1 0 0 %と、 2 5 %〜 0 '¾のように変化させるもの であってもよい この場台には、 正方向には負荷には最大で VC C 3 ノ 4の電圧に対応した駆動電流 I υを流し、 負方向には、 V C C / 4の 電圧に対応した駆動電流 I οを流すようにすることもできる このよう に、 一方の PWM入力 ί言号を固定とした場台には、 電流変化幅を駆動電 流の向きに対応して様々に設定することができる In FIG. 1, for example, the human power (the Hals width duty of the signal PWM2 is fixed at 250 ′, and the input Hals width duty of the PWM 1 is 25 ° 25 −η −1 100 % And 25% to 0 '¾. In this case, the load in the forward direction has a drive current I し た corresponding to the maximum voltage of VC C 3 4 4. In the negative direction, the drive current I ο corresponding to the voltage of VCC / 4 can also be applied. The width can be set variously according to the direction of the drive current
第 3図には、 この発明に係る PWM制御される Η型プリ 'ソジ回路の一 実施例の回路図が示されている この実施例では、 前記 Η型プリ ッジ回 路の人力端子に供給される PWMi言号を形成する PWMi言号発生回路の 基本的な回路図が示されている FIG. 3 shows a circuit diagram of an embodiment of a Η-shaped pre-soji circuit that is PWM controlled according to the present invention. In this embodiment, a human-powered terminal of the Η-shaped bridge circuit is provided. The basic circuit diagram of the PWMi symbol generation circuit that forms the supplied PWMi symbol is shown.
この実施例の PWM信号発生回路は、 前記第 2図に示したタイ ミング 図に対応している つまり、 入力信号が零のとき、 2つのハーフブリツ ジ (出力回路) に供給される人力信号 PWM 1と PWM2力 、ルス幅デ ユーティ 50%で、 かつ同相として出力端子 POUTと NOUTの電圧 を同相で変化させて負荷に流れる電流を零にする この状態を基準にし て、 入力信号の正又は負の変化に対応して負荷に流れる電流の向きと、 電流値とを使用する電源電圧 VCCをフルスケール (:: -VCC) で負荷 に供給して形成するために、 上記入力信号 PWM 1と PWM 2のハルス 幅デューティを相補的に変化させる The PWM signal generating circuit of this embodiment corresponds to the timing diagram shown in FIG. 2. That is, when the input signal is zero, the human-power signal PWM 1 supplied to the two half bridges (output circuits) And PWM2 power, 50% loss width duty, and change the voltage of the output terminals POUT and NOUT in the same phase to make the current flowing to the load zero as the same phase. The direction of the current flowing to the load in response to the positive or negative change of the input signal, and the current value are used to supply the power supply voltage VCC to the load at full scale (::-VCC). The Hals width duty of the input signals PWM1 and PWM2 is changed complementarily
上記のような入力 ί言号 PWM 1と PWM2は、 2つのオヘアンプ (演 算增幅回路) 〇Ρ 1、 〇Ρ 2と、 2つのコンハレータ (電圧比較回路) VC 1と VC 2により形成される 入力信号 V i nと基準電圧 V r e f をォベアンフ OP 1に供給して反転増幅回路として動作させて逆相の出 力電圧 V 1を形成する この出力電圧 V 1と上記基準電圧 V r e f をォ ヘアンフ OP 2に供給し、 人力抵抗 R 3と帰還抵抗 R 4の抵抗値を等し く設定して、 電圧利得 1の反転増幅回路として動作させて上記出力電圧 V 1に対して逆相の出力電圧 V 2を形成する Inputs as above ί Words PWM 1 and PWM 2 are formed by two operational amplifiers (computing width circuits) 〇Ρ 1 and 〇Ρ 2 and two concentrators (voltage comparison circuits) VC 1 and VC 2 The signal V in and the reference voltage V ref are supplied to the obeamp OP 1 to operate as an inverting amplifier circuit to form an output voltage V 1 having a negative phase. And set the resistance values of the human resistance R 3 and the feedback resistance R 4 to be equal, and operate as an inverting amplifier circuit with a voltage gain of 1 to output the output voltage V 2 in the opposite phase to the output voltage V 1. Form
上記オヘアンフ OP 1は、 必要に応じて入力信号 V i nを入力抵抗 R 1と帰還抵抗 R 2との抵抗比に対応した電圧利得で増幅するものである 上記抵抗 R 1と R 2の抵抗値を等しくして電圧利得を 1として、 バッ ファ回路 (ボルティ一ジフォロワ回路) として動作させてもよい した がって、 人力信号 V i nを形成する回路の出力インビーダンスが十分小 さいときには、 上記オヘアンフ OP 1は省略することもできる The ohmic amplifier OP1 amplifies the input signal Vin with a voltage gain corresponding to a resistance ratio between the input resistor R1 and the feedback resistor R2, if necessary, by increasing the resistance values of the resistors R1 and R2. The circuit may be operated as a buffer circuit (Voltage-follower circuit) with the voltage gain being equal to 1. Therefore, when the output impedance of the circuit forming the human-power signal Vin is sufficiently small, the above-mentioned ohmic amplifier may be used. OP 1 can be omitted
第 3図において、 H型ブリッジ回路を駆動する場合には、 2つのハー フブリッジ回路の貫通電流を防止するため、 つまり MOS FETQ 1と Q 2及び Q 3と Q 4を通して電源電圧 V C Cから回路の接地電位 G D に電流が流れるのを防止するために、 オン状態の MO SFE Tがオフ状 態になつてからオフ状態の M 0 S F E Tをォン状態に り替えるような ディ レイ回路を設けることが望ましい (同図では省略) In Fig. 3, when driving the H-type bridge circuit, in order to prevent shoot-through current of the two half bridge circuits, that is, to ground the circuit from power supply voltage VCC through MOS FETs Q1 and Q2 and Q3 and Q4. In order to prevent the current from flowing to the potential GD, it is desirable to provide a delay circuit that switches the M0 SFET in the off state to the on state after the MOSFET in the on state turns off. (Omitted in the figure)
上記オヘアンプ 0 P 1の出力電圧 V 1はコンハレ一夕 VC 1の反転入 力 い ) に供給される 上記オヘアンブ OP 2で形成された反転出力電 圧 V2は、 コンハレータ VC 2の反転入力 ( -) に供給される . これら のコンハレー夕 VC 1と VC 2の同相入力 ( -) には PWMキヤリァ信 号 (三角波) が印加される . ここで PWMキャリア ί言号の DCレベルは 基準電圧 V r e f に等しくされている., The output voltage V 1 of the above-mentioned operational amplifier 0 P 1 is supplied to the inverting input of the circuit VC 1. The voltage V2 is supplied to the inverting input (-) of the con- verter VC2. The PWM carrier signal (triangular wave) is applied to the in-phase input (-) of these con- verters VC1 and VC2. The DC level of the carrier ί symbol is equal to the reference voltage V ref.,
したがって、 人力電圧 (上記入力信号の電圧値) V i nと基準電圧 V r e f が等しいとき、 言い換えるならば、 入力信号 V i nが零のときに は、 ォベアンフ〇P 1の出力電圧 V 1と OP 2の出力電圧 V 2は基準電 圧 V r e f に等しく、 コンハレ一夕 VC 1、 VC 2の出力にはデューテ ィ 50 ( の同相の PWM波形が現れる 上記コンハレー夕 V C 1、 VC 2の出力 PWM 1と PWM2で H型プリッジ回路は駆動されるので、 H 型プリ、、>ジ回路の正相補出力 POUTにはコンハレー夕 VC 1出力 PW M 1が反転されて現れ、 逆相出力 N OUT出力にはコンハレ一夕 VC 2 出力 PWM 2が反転して現れる このようにして、 入力信号 (人力電圧 ) V i nと基準電圧 V r e f が等しときには、 正相出力 POUTと逆相 出力 N OUTとがデューティ約 50 ¾の同相の PWMは波形が現れて負 荷に電流は流れない Therefore, when the input voltage Vin is equal to the reference voltage V ref, in other words, when the input signal Vin is zero, the output voltage V 1 of the oveamplifier P 1 and the output voltage OP 2 The output voltage V2 is equal to the reference voltage Vref, and the output of the con- troller VC1 and VC2 has a duty 50 Since the H-type bridge circuit is driven by PWM2, the complementary VC1 output PWM1 appears at the positive complementary output POUT of the H-type pre- and rectifier circuits, and the complementary output NOUT output Overnight VC 2 output PWM 2 appears inverted In this way, when the input signal (manual voltage) Vin and the reference voltage Vref are equal, the positive-phase output POUT and the negative-phase output NOUT have a duty of about 50同 In-phase PWM shows waveform and current does not flow to load
V i n ■ V r e f の場合、 オヘアンフ 0 P 1、 OP 2出力電圧 V 1、 V は、 それぞれ V 1 V r e f 、 V 2 V r e f の関係となり、 正相 出力 POUTのハルス幅デューティ 、 50 α6、 逆相出力 N OUTのハル ス幅デューテ 5 0' になる したがって、 逆相出力 NOUTから正 相出力 P 0 U Tに向かつて 荷に電流が流れる In the case of V in ■ V ref, Oheanfu 0 P 1, OP 2 output voltage V 1, V is, V 1 V ref, respectively, become a relationship of V 2 V ref, Hals width duty of the positive phase output POUT, 50 α 6, The negative phase output N OUT has a duty cycle of 50'.Therefore, current flows from the negative phase output NOUT to the positive phase output P 0 UT to the load
上記とは逆に V i n V r e f の場合、 オペアンフ 0 P 1、 0 P 2出 力電圧 V 1、 V 2は、 それぞれ V 1 V r e f , V 2 V r e f の関係 となり、 正相出力 P OUTのハルス幅デューティ ' 50%、 逆相出力 N OUTのハルス幅デューティ、 50¾になる したがって、 正相出力 P 0 UTから逆相出力 N OUTに向かって負荷に電流が流れる . 第 4図には、 この発明に係る PWM制御される H型プリッジ回路の他 の一実施例の回路図が示されているい この実施例では、 前記 H型プリ ッ ジ回路における動作電圧 VCCの変動によって、 負荷に流れる電流が変 動してしまうのを防ぐよう工夫されている つまり、 第 3図の実施例で は、 P WM制御が H型ブリ ッジ回路の電源電圧 V C Cと無関係に行われ る PWM制御されている出力 POUTと NO UTの平均出力電圧は、 電源電圧 V C Cとハルス幅デューティの積で表される V C Cが変動す れば平均出力電圧も変動し負荷に流れる電流は変動する Conversely, when V in V ref, the operational amplifiers 0 P 1 and 0 P 2 output voltages V 1 and V 2 are in the relationship of V 1 V ref and V 2 V ref, respectively. Hals width duty '50%, Hals width duty of negative phase output N OUT becomes 50¾.Therefore, current flows from the positive phase output P 0 UT to the negative phase output N OUT to the load. FIG. 4 is a circuit diagram of another embodiment of the PWM-controlled H-shaped bridge circuit according to the present invention. In this embodiment, the variation of the operating voltage VCC in the H-shaped bridge circuit is described. In other words, in the embodiment shown in Fig. 3, the PWM control is performed independently of the power supply voltage VCC of the H-type bridge circuit. The average output voltage of the PWM-controlled output POUT and NOT is the average output voltage if the VCC expressed by the product of the power supply voltage VCC and the Hals width duty fluctuates, and the current flowing to the load fluctuates.
そこで、 この実施例では負荷と直列に電流センス抵抗 R sを接続し、 R sの両端電圧をオヘアンフ Ό P 3でレベルシフ 卜しその出力をオヘア ンフ 0 P 1に帰還させる 上記電流センス抵抗 R sの値は負荷が持つ直 流抵抗に比べ十分小さくされる 上記電流センス抵抗 R sを流れる電流 は、 負荷が持つ自己ィンダクタンス L Lと直流抵抗 RLによって十分平 滑されている 上 ΐ己電流センス抵抗 R sの両端電圧 R s 、 I υは、 ォへ アンフ 0 Ρ 3で增幅 (増幅率 R 6 ,'R 5 ) されると同時に、 基準電圧 V r e f を基準 U o 0のときォベアンフ OP 3出力電圧 V r e f ) とする電圧にレベルシフ トされる オヘアンフ OP 3の出力は帰還抵 抗 R 2を介してオヘアンフ OP 1の反転入力に帰還される した力 つて 入力電圧 V i nと負荷に流れる出力電流 I υの間には以下の関係式 ( 1 ) が成立する すなわち Therefore, in this embodiment, a current sense resistor R s is connected in series with the load, the voltage between both ends of R s is level-shifted by the output amplifier P 3, and the output is fed back to the output pin 0 P 1. Is sufficiently smaller than the DC resistance of the load.The current flowing through the current sense resistor R s is sufficiently smoothed by the self-inductance LL and DC resistance RL of the load. The voltage R s, I R across R s is amplified (amplification rate R 6, 'R 5) by the amplifier 0 Ρ 3 and at the same time, the reference voltage V ref is the reference U o 0 and the output OP 3 output The voltage of the output OP 3 is level-shifted to the voltage V ref), and the output of the OP 3 is fed back to the inverting input of the OP 1 via the feedback resistor R 2. The following relational expression (1) between υ Stand for That
I ο (V i η V r e f ) (R 2 R 1 ) (R δ , R 6 R s I ο (V i η V r e f) (R 2 R 1) (R δ, R 6 R s
( 1 ) となり、 負荷インヒ一ダンスに左右されな 、電流を負荷に流すことが できる (1), and the current can flow to the load regardless of the load impedance.
上記第 3図の実施例において、 PWMキヤリァ ί言号の振幅 ' V Cが電 源電圧 VCCに比例するようにしておくと、 電源電圧 VCCが変動して も負荷に流れる電流 I oを一定にすることができる, たとえば V 1 V 2 VCの場合、 正相出力 POUTのバルス幅デューティ 2 5 ό、 逆 相出力 N0UTのハルス幅デューティ 1 5%で、 その差 5 0 ( である , すなわち負荷にかかる平均電圧は 0. 5 VC Cである . いま電源電圧 V C Cが -'- 1 0 ό変動した場合、 VC - 1 0 %になる その結果、 正 相出力 POUTのハルス幅デューティ ( 2 5 / 1. 1 5 0 ) ¾、 逆 相出力 N OUTのハルス幅デューティ ( - 2 5 / 1. 1 5 0 ) ( 、 その差は 5 0 1. 1 %となる 負荷にかかる平均 圧は上記ハルス幅 デューティ差と電源電圧の積なので電源電圧 V C Cが上記のように変化 後も、 5 0 ノ 1. 1 (% ) >、 1. 1 : V C C 0. 5 V C Cと一定にな るものである In the embodiment of FIG. 3 described above, if the amplitude of the PWM carrier signal ίVC is proportional to the power supply voltage VCC, the power supply voltage VCC fluctuates. Also, the current I o flowing through the load can be kept constant. For example, in the case of V 1 V 2 VC, the pulse width duty of the positive-phase output POUT is 25ό, and the Halse width duty of the negative-phase output N0UT is 15%. The difference is 50 0 (that is, the average voltage applied to the load is 0.5 V CC. If the power supply voltage VCC fluctuates by -'- 10 VC, it becomes VC-10%. HOUT width duty of POUT (25 / 1.150) 逆, Negative phase output NOUT Hals width duty (-25 / 1.150) (, the difference is 501.1% The average pressure applied to the load is the product of the above-mentioned Hals width duty difference and the power supply voltage.Therefore, even after the power supply voltage VCC changes as described above, 50 no 1.1 (%)>, 1.1: VCC 0.5 VCC Is constant
第 4図の実施例の場台は電流帰還はかかっているので、 前記第 3図の 実施例のほどではないにしても P WMキャリア信号の振幅 V C一定では 電源電圧 VC Cの変動は減衰されて出力電流の変動になる これを避け るには上言己と同様に V Cを V C Cに比例させる '必要がある In the embodiment of FIG. 4, current feedback is applied. Therefore, even if the amplitude of the PWM carrier signal is constant VC, the fluctuation of the power supply voltage VC C is attenuated even if not as large as the embodiment of FIG. To avoid this, it is necessary to make VC proportional to VCC as in the above.
第 5図には、 この発明に係る PWM制御される H型プリ ッジ回路の他 の一実施例の回路図が示されている この実施例では、 H型ブリ ッジ回 路の動作電圧 VC C力〈帰還される H型プリ ッジ回路の出力電圧 POU Tと NOUTをオヘアンフ OP 3でレベルシフ卜して、 入力に設けられ たオヘアンフ Ό P 1に負'埽還する H型ブリ ッジ回路の正相出力 P 0 U Tと NOUTは、 その平均電圧を V Pと V Nとすると、 次の関係式 (.2 ) と ( 3 ) が成立する FIG. 5 is a circuit diagram of another embodiment of the PWM-controlled H-type bridge circuit according to the present invention. In this embodiment, the operating voltage VC of the H-type bridge circuit is shown. C-power <H-bridge circuit that level-shifts the output voltage POUT and NOUT of the H-bridge circuit that is fed back using an ohmic amplifier OP3, and returns negatively to the input amplifier P1. Assuming that the average voltages of the positive phase outputs P 0 UT and NOUT are VP and VN, the following relational expressions (.2) and (3) are established.
- ( V i n · R 2 ) R 1 - (VP VN) R 7, (R 5 R 6 ) -(VinR2) R1-(VP VN) R7, (R5R6)
( 2 ) .·. G V (VP VN) ,,V i n (2) ... G V (VP VN) ,, V in
R 2 ( R 5 R 6 ) , R 1 · R 7 ( 3 ) 上記 (3) 式により人出力間電圧利得がきまるものとなる, キャパシ 夕 C 1と C 2は、 帰還ループから PWMキヤリア信号を除くためのフィ ル夕として作用する R 2 (R 5 R 6), R 1R 7 (3) The voltage gain between human outputs is determined by the above equation (3). Capacitances C1 and C2 act as filters for removing the PWM carrier signal from the feedback loop.
第 6図には、 この発明に係る PWM制御される H型プリッジ回路の他 の一実施例の回路図が示されている この実施例でも、 H型ブリッジ回 路の動作電圧 VCCが帰還される この実施例では、 正相出力 POUT の電圧だけをオヘアンフ Ό P 3でレベルシフトし負帰還するものである 逆相出力 NOUTは、 上記正相出力 POUTと逆相で変化しているの で、 抵抗 R 8と R 1 0で V C C , 2の中点電圧を形成し、 上記正相出力 POUTの電圧だけでも負帰還の目的が達成できる 後述するような P WM制御システ厶の半導体集積回路化に際しては、 帰還ルーフから P W Mキヤリァ信号を除くためのフィルタがキヤハシタ C 1のみとなり、 そ れに対応してキヤハシタ C 1を接続するための外部端子が P 1のみとな り、 前記第 5図の実施例回路を半導体集積回路化した場合に比べて、 外 部端子を 1ヒン削除し、 かつキヤハシタを 1個減らすことができる 第 7図には、 この発明に係る PWM制御される H型プリ ッジ回路の他 の一実施例のブ口ック図が示されている この実施例では、 H型プリッ ジ回路が Nチャンネル型 M OS FETで構成される つまり、 電源電圧 V C C側のスィッチ素子が前記のような Pチャンネル型 M 0 S F E Tに 代えて、 Nチャンネル型 MO S F E Tが用いられる このような出力回 路の単一チヤンネルの M 0 S F E Tで構成することにより、 半導体集積 回路上でのレイァゥ卜を簡素化できる FIG. 6 shows a circuit diagram of another embodiment of the PWM-controlled H-type bridge circuit according to the present invention. Also in this embodiment, the operating voltage VCC of the H-type bridge circuit is fed back. In this embodiment, only the voltage of the positive-phase output POUT is level-shifted by the ohmic amplifier P3 and negatively fed back. The negative-phase output NOUT changes in the negative phase with respect to the positive-phase output POUT. R8 and R10 form the midpoint voltage of VCC and 2 so that the purpose of the negative feedback can be achieved only by the voltage of the positive-phase output POUT.In the case of a semiconductor integrated circuit of a PWM control system as described later, The filter for removing the PWM carrier signal from the feedback roof is only the capacitor C1, and the corresponding external terminal for connecting the capacitor C1 is only P1. External end compared to a circuit integrated into a semiconductor integrated circuit FIG. 7 shows a block diagram of another embodiment of the PWM-controlled H-type bridge circuit according to the present invention, in which one capacitor can be eliminated and one carrier can be reduced. In this embodiment, the H-type bridge circuit is constituted by an N-channel MOS FET. That is, the switch element on the power supply voltage VCC side is replaced with the P-channel M0 SFET as described above, A type MOS SFET is used. By constructing such an output circuit with a single-channel M 0 SFET, the layout on a semiconductor integrated circuit can be simplified.
この実施例のように H型ブリ ッジ回路の出力トランジスタを上下ァ一 厶 (スィッチ素子) とも Nチャンネル型 MOS F ETとした場合には、 上ァ一厶側の Nチヤンネル型 MO S F E TQ 1と Q 3駆動するためには 昇圧回路 C P 1, C P 2が必要である つまり、 MO S F E T Q 1又は When the output transistor of the H-type bridge circuit is an N-channel MOS FET for both the upper and lower arms (switch elements) as in this embodiment, the N-channel MOS FET TQ 1 on the upper arm side is used. And Q3 drive requires booster circuits CP1 and CP2.
1 i Q 3をオン状態にするとき、 そのゲ一卜に印加される駆動電圧を VC C - V t h (V t hは MO SFETQ 1、 Q3のしきし、値電圧) 以上の昇 圧電圧 VB S Tにするための昇圧回路 C P 1, C P 2が設けられる ま た上下アームの MO SFETQ 1と Q2、 Q3と Q4の同時オンによる 貫通電流を避けるためのディレイ回路 D L 1 , DL 2力設けられる 第 8図には、 上記第 7図の P WM制御される H型ブリッジ回路の動作 を説明するための波形図である 同図は、 ハーフブリ ッジ回路の上下ァ ー厶同時ォンを避けるためターンォンディ レイ T d 1を夕一ンオフディ レイ Td 2より長くされる MOS FETQ 1と Q 2を例にして説明す ると、 駆動 ί言号 PWM1が口ウレべ/し Lからハイレベル Hに変化すると き、 かかる変化に対して遅延回路 D L 1においては、 MOS FETQ 1 のゲ一卜, ソース間に印加される電圧 VG S Q 1の立ち上がりを上言己タ —ンオンデ丫 レイ Td 1対応した遅延時間に設定し、 MOS FETQ2 のゲート, ソース間に印加される電圧 V G S Q 2の立ち下がりを上記夕 —ンオフディ レイ Td 2対応した遅延時間に設定される. 1 i When Q3 is turned on, the drive voltage applied to that gate is set to a boosted voltage VBST that is equal to or higher than VCC-Vth (Vth is the threshold voltage of MOS FET Q1, Q3). The booster circuits CP 1 and CP 2 are provided for this purpose, and the delay circuits DL 1 and DL 2 are provided to avoid shoot-through current due to simultaneous turning on of the MOSFETs Q 1 and Q 2 and Q 3 and Q 4 on the upper and lower arms. Is a waveform diagram for explaining the operation of the H-type bridge circuit controlled by PWM shown in FIG. 7 above. In FIG. 7, the turn-on delay T d is used to avoid simultaneous upper and lower arm turning on of the half-bridge circuit. For example, MOS FETs Q1 and Q2, where 1 is longer than the off-delay Td2, will be described as an example.Driving signal When PWM1 changes from L to high level H, such a change In contrast, in the delay circuit DL1, the voltage VGSQ1 applied between the gate and source of the MOS FETQ1 rises. The rise is set to the delay time corresponding to the turn-on delay Td1, and the fall of the voltage VGSQ2 applied between the gate and the source of the MOS FETQ2 is set to the delay time corresponding to the above-mentioned turn-off delay Td2. Is set.
このような遅延時間 T d 1と T d 2の設定によつて、 駆動信号 P WM 1力くロウレベル L力、らハイレベル Hに変化するときには、 MOSFET Q 2が上言己遅延時間 Td 2に対応して早いタイ ミ ングでオフ状態となり 、 その後に MO S F E T Q 1が上記遅延時間 T d 1に対応して遅れてォ ン状態となるので、 上記 M OS FETQ 1と Q 2を通した貫通電流が発 生しない 逆に、 駆動信号 PWM 1力くハイレベル Hからロウレベルしに 変化するときには、 MOSFETQ 1が上記遅延時間 Td 1に対応して 早いタイ ミングでオフ状態となり、 その後に MOSFETQ 2が上記遅 延時間 Td 1に対応して遅れてオン状態となるので、 上記 MOSFET Q 1と Q 2を通した貫通電流が発生しな L、 By setting the delay times Td1 and Td2 as described above, when the drive signal PWM1 changes to a low level L and then to a high level H, the MOSFET Q2 changes to the self-delay time Td2. Correspondingly, the MOSFET is turned off at an earlier timing, and thereafter, the MOSFET Q1 is turned on with a delay corresponding to the above-mentioned delay time Td1, so that the through current through the MOSFETs Q1 and Q2 is obtained. Conversely, when the drive signal PWM 1 changes from high level H to low level, the MOSFET Q 1 turns off at an earlier timing corresponding to the delay time Td 1, and then the MOSFET Q 2 Since the transistor is turned on with a delay corresponding to the delay time Td1, the through current does not occur through the MOSFETs Q1 and Q2.
上記 MO S F E T Q 1、 Q 2は、 負荷に供給すべき大きな出力電流を The above MO S F E T Q 1 and Q 2 provide a large output current to be supplied to the load.
1 ) 得るようにするために大きなサイズに形成される それ故、 入力ゲ一卜 容量は比較的大きな容量値にされる このような大きなサイズからなる1) It is formed in a large size so that it can be obtained. Therefore, the input gate capacitance is set to a relatively large capacitance value.
MO S F ETのゲ一卜電圧を、 上記 PWMi言号に対応して高速に変化さ せるために、 特に制限されないが、 CMO Sインバー夕回路からなるプ リ ドライバ' P D 1、 PD 2が設けられる . 電源電圧 V C C側の MO S F E TQ 1のゲ一卜に供給される入力信号を形成するフリ ドライバ PD 1 は、 その動作電圧が昇圧回路 C P 1により形成された昇圧電圧 VB S T とされることにより、 MO S F ETQ 1のゲ一卜に供給されるハイレべ ルは、 上記昇圧電圧 VB S Tに対応したハイレベルにされる In order to change the gate voltage of MOSFET at high speed in accordance with the above-mentioned PWMi language, pre-drivers PD1 and PD2 composed of CMOS inverter circuits are provided, although not particularly limited. The free driver PD 1, which forms the input signal supplied to the gate of the MOS FET TQ 1 on the power supply voltage VCC, has its operating voltage set to the boosted voltage VB ST formed by the boosting circuit CP 1. The high level supplied to the gate of the MOSFETQ 1 is set to a high level corresponding to the boosted voltage VBST.
H型プリ ッジ回路の他方のハーフブリッジ回路の上下アームの MO S F ETQ 3と Q 4を駆動する回路にも、 前記同様な遅延回路 DL 2、 フ リ ドライバ P D 3、 PD 4及び昇圧回路 C P 2力《設けられる Circuits for driving the MOSFETQ3 and Q4 of the upper and lower arms of the other half bridge circuit of the H-type bridge circuit also include the same delay circuit DL2, free drivers PD3, PD4, and booster circuit CP as described above. 2 power << established
第 9図には、 上記第 7図の PWM制御される H型プリッジ回路に用い られる昇圧回路の一実施例の回路図が示されている この実施例では、 チャージホンフ回路により昇圧電圧を形成する. チャージホンフ回路で は、 キヤハシ夕 C 3を電源電圧 V C Cでブリチャージし、 かかるフリチ ャ一ジ電圧に口ジック回路の電源電圧 V S Sを加えて昇圧電圧を形成す る FIG. 9 is a circuit diagram of one embodiment of a booster circuit used in the PWM-controlled H-shaped bridge circuit of FIG. 7 in this embodiment.In this embodiment, a boosted voltage is formed by a charge-hoff circuit. In the charge-hung circuit, the capacitor C3 is precharged with the power supply voltage VCC, and the boosted voltage is formed by adding the power supply voltage VSS of the opening and closing circuit to the charged voltage.
この実施例では、 上記キャハシ夕 C 3に電源電圧 V C Cをフリチヤ一 ジする Pチャンネル型 M〇 S F ETQ 1 3が用いられる この MOS F E TQ 1 3のゲ一卜には、 Nチヤンネル型 MO S F E TQ 1 2で形成さ れたロウレベルの出力信号によりォン状態にされる 上記 MO S F E T Q 1 3のゲ一卜とキヤハシタ C 3の昇圧側のノードとの間には抵抗 R 1 0が設けられる . この MO S F ETQ 12がオフ状態にされ、 キヤハシ タ C 3の昇圧側のノードが VCC以上に高くなると、 上記抵抗 R 1 0を 通してゲート電圧を上記昇圧電圧に対応して高く し MOSFETQ 1 3 In this embodiment, a P-channel type M〇SF ETQ 13 which uses the power supply voltage VCC for the above-mentioned cache C 3 is used as a gate of the MOS FE TQ 13. A resistor R 10 is provided between the gate of the MOS FET Q 13, which is turned on by the low-level output signal formed in 12, and the boosted node of the capacitor C 3. When the MO SF ETQ 12 is turned off and the boosted node of the capacitor C3 rises above VCC, the gate voltage is raised through the resistor R10 to correspond to the boosted voltage and the MOSFET Q13
I G をオフ状態にする, IG Turn off,
このようなプリチャージ MO S F E TQ 13のスィツチ制御方法は、 昇圧電圧を出力容量 C 4に伝える出力スィツチ MOSFETQ 1 4のス ィツチ制御にも用いられる つまり、 MOSFETQ 1 4のオン状態に より、 MO S F E TQ 1 5のゲ一卜をロウレベルにしてスィ ツチ MO S F E T Q 15をォン状態にして上記昇圧された電圧 V 12 ( V C C : V S S) を出力容量 C 4に伝える この MO S F E TQ 14がオフ状態に され、 キヤハシタ C 3の昇圧側のノ一ドがブリチヤージ動作によって V C Cまで低下すると、 上記抵抗 R 1 1を通して MOS F E TQ 1 4のゲ ―卜電圧が上記昇圧電圧 VB S Tに対応して高くなり M 0 S F E T Q 1 5をオフ状態にする Such a switch control method of the precharge MO SFE TQ 13 is also used for the switch control of the output switch MOSFET Q 14 for transmitting the boosted voltage to the output capacitor C 4. The gate of TQ15 is set to the low level, the switch MOSFETQ15 is turned on, and the boosted voltage V12 (VCC: VSS) is transmitted to the output capacitor C4. The MOSFE TQ14 is turned off. When the boosted node of the capacitor C3 drops to VCC due to the brittle operation, the gate voltage of the MOS FETQ14 increases through the resistor R11 in response to the boosted voltage VBST. 0 Turn off SFETQ 1 5
第 1 0図には、 上記第 9図の昇圧回路の動作を説明するための波形図 が示されている クロック ί言号 CLKがロウレベルのとき、 ドライバと して動作するィンパ一タ回路 I V 1の出力電圧 V 1 0はハイレベル (V S S ) にされる それ故、 MOSF ETQ 1 1がオン状態となって、 出 力電圧 V 1 1がロウレベル ( G N D ) とし、 Μ 0 S F E T Q 1 2をオン 状態として MO S F ETQ 13のゲ一ト電圧 V 1 3をロウレベルに引き 抜く これにより、 MO S F E T Q 1 3がォン状態となつて、 キヤハシ 夕 C 3の昇圧側ノ―ド V 1 2は電源電圧 V C Cにフリチヤ一ジされる 上記ク口ック信号 C L Κのロウレベルにより、 MO S F E TQ 14力、' オフ状態となり、 Μ 0 S F E T Q 1 5のゲート電圧 V 1 4には昇圧電圧 VB STが抵抗 R 1 1を通して伝えられてオフ状態とされる FIG. 10 shows a waveform diagram for explaining the operation of the booster circuit of FIG. 9 above. Clock No. Signal When the CLK is at a low level, an inverter circuit IV 1 which operates as a driver The output voltage V 10 is set to the high level (VSS). Therefore, the MOSFETQ 11 is turned on, the output voltage V 11 is set to the low level (GND), and the Μ0 SFETQ 12 is turned on. As a result, the gate voltage V 13 of the MOSFETQ 13 is pulled to a low level.This causes the MOS FETQ 13 to be turned on, and the boosted node V 12 of the capacitor C 3 is connected to the power supply voltage VCC. Due to the low level of the above-mentioned cut-off signal CL MO, the MOS SFE TQ 14 is turned off and the Μ0 gate voltage V 14 of the SFETQ 15 is boosted by the resistor R 1. Conveyed through 1 and turned off
次にクロック信号 CLKがハイレベルになると、 ドライバとして動作 するイン 一夕回路 I V 1の出力電圧 V 1 0はロウレベル (GND) に される それ故、 MO S F ETQ 1 0がオン状態となって、 出力 ¾iiV 1 1をハイレベル (VCC) とし、 MOS FETQ 12をオフ状態とと する. 上記 MOSFETQ 10のオン状態に対応してキヤハシ夕 C 3の 昇圧側の電圧 V 1 2は V C C V S Sのような昇圧電圧にされる この とき、 上記出力電圧 V 1 1のロウレベルにより MO S F E TQ 1 2がォ フ状態にされていので、 上記昇圧動作に対応して V 1 2の電圧上昇に対 応して MOSFETQ 1 3のゲ一卜電圧も高くなつてオフ状態となる このため、 キヤハシタ C 3のブ一トス卜ッフ作用によって形成された昇 圧電圧 V C C V S Sが電源電圧 V C C側に抜けてしまうことがない 上記ク口ック信号 C L Kのハイレベルにより、 M〇 S F E TQ 1 4がォ ン状態にされて、 MOSFETQ 1 5のゲ一卜電圧 V 1 4をロウレベル (GND) にするので、 かかる MO S F E TQ 1 4がオン状態となって 上記昇圧された電圧 VC C - V S Sを出力容量 C 4に伝える Next, when the clock signal CLK becomes high level, the output voltage V 10 of the input circuit IV 1 which operates as a driver is set to low level (GND). Therefore, the MOSFETQ 10 is turned on, Output ¾iiV 11 is set to high level (VCC) and MOS FETQ 12 is turned off. In response to the ON state of the MOSFET Q10, the voltage V12 on the boost side of the capacitor C3 is set to a boosted voltage such as VCCVSS. At this time, the low level of the output voltage V1 2 is turned off, and the gate voltage of MOSFET Q13 also rises in response to the voltage rise of V12 in response to the above-described boosting operation, and the MOSFET Q13 is turned off. The boosted voltage VCCVSS formed by the bootstrap action of the power supply voltage does not leak to the power supply voltage VCC side. Since the gate voltage V14 of the MOSFET Q15 is set to low level (GND), the MOSFET Q14 is turned on, and the boosted voltage VCC-VSS is converted to the output capacitance C4. Tell
この実施例では、 MOSFETQ 1 2及び Q 1 4のソ一ス側に定電流 源 I 1と I 2が設けられている このため、 MOSFETQ 12及び Q 1 4をオン状態にさせるとき、 Pチャンネル型 MOS FETQ 1 3と Q 1 5のゲ一卜電圧、 ソース間電圧を R 1 0 x 1 1及び R 1 1 x 1 2に設 定し、 ゲ一卜, ソース間電圧を必要最小の電圧差に設定し、 上記抵抗 R 1 0と R l 1によるオフ状態への ¾り替えを高速にするものである こ のようにクロック信号 C L Kの変化に対応して、 上記のような動作を繰 り返すことにより、 昇圧電圧 V B S Tは V C C V S Sのような昇圧電 圧とされる 第 7図の実施例においては、 各ハーフブリッジ回路に昇圧 回路 C P 1と C P 2を設ける構成としている力 <、 1つの昇圧回路により 、 上記両ドライバ' PD 1と PD 3に供給される動作電圧を形成するもの であってよい In this embodiment, the constant current sources I 1 and I 2 are provided on the source side of the MOSFETs Q 12 and Q 14. Therefore, when the MOSFETs Q 12 and Q 14 are turned on, the P-channel type Set the gate voltage and source voltage of MOS FETs Q13 and Q15 to R10x11 and R11x12, and set the gate-source voltage to the minimum required voltage difference. It is used to make the switching to the off-state by the resistors R10 and R11 faster.The above operation is repeated according to the change of the clock signal CLK. As a result, the boosted voltage VBST is set to a boosted voltage such as VCCVSS.In the embodiment of FIG. 7, the boosting circuits CP 1 and CP 2 are provided in each half-bridge circuit. To form the operating voltage supplied to both drivers PD 1 and PD 3
第 1 1図には、 この発明に係る PWM制御される H型プリッジ回路の 動作を説明するための波形図が示されている 前記第 3図に示したよう な実施例回路において、 人力信号 V i nに正弦波を印加すると、 ォベア ンブ〇 P Iの出力電圧 V I (すなわちコンハレ一夕 VC 1の反転入力 ( ―) ) では位相反転波形が、 オペアンプ OP 2の出力電圧 V 2 (すなわ ちコンハレータ VC 2の反転入力 ( -) ) には同相波形が現れる コン バレ一夕 VC 1、 VC 2の同相入力 ( ) には同 の PWMキャリアが 印加されているので、 コンハレ一夕 VC 1、 VC 2においては、 独立の PWM波形、 つまり入力信号 V i nに対応して相補的にハルス幅デュー ティが変化するようにされる その制御信号 P WM 1と P MW 2は、 出 力回路で反転されて、 正相出力 PUUTと逆相出力 NOUTとなる 正 相出力 POUT、 逆相出力 NOUTの相互関係には以下の 4つのモード がある FIG. 11 shows a waveform diagram for explaining the operation of the H-type bridge circuit controlled by PWM according to the present invention. In the circuit of the embodiment as shown in FIG. When a sine wave is applied to in At the output voltage VI of the output PI (ie, the inverted input (-) of VC1), the phase-inverted waveform is applied to the output voltage V2 of the operational amplifier OP2 (that is, the inverted input (-) of the VC2). Since the same PWM carrier is applied to the in-phase inputs () of the converters VC 1 and VC 2, an independent PWM waveform, that is, the input is the same for the converters VC 1 and VC 2 The control signals P WM1 and P MW 2 are complementarily changed in response to the signal Vin, and the control signals P WM1 and P MW 2 are inverted by the output circuit to output the positive-phase output PUUT and the negative-phase output NOUT The following four modes exist in the correlation between the positive-phase output POUT and the negative-phase output NOUT
( 1 ) 正相出力 POUT力;'ハイレベルで逆相出力 NOUTが口ウレべ ルのとき、 (1) Positive phase output POUT force; 'High level and negative phase output When NOUT is at the mouth level,
( ) 正相出力 POUT力 、ィレベルで逆相出力 NOUT力 、ィレべ ルのとき、 () Positive phase output POUT force
( 3 ) 正相出力 POUTがロウレベルで逆相出力 NOUT力くハイレべ ルのとき、 (3) Positive phase output POUT is low level and negative phase output NOUT
( 4) 正相出力 POUTがロウレベルで逆相出力 NOUTが口ウレべ ルのとき、 (4) When positive-phase output POUT is low and negative-phase output NOUT is
上記 ( 1 ) の期間では、 MO S F E T Q 1と Q 4がォン状態となる電 流経路で電流が流れ、 ( 2 ) の期間では、 上側アーム間の MO S F ET Q 1と Q 3及び寄生ダイォ一ドで電流が回生する 上記 ( 3 ) の期間で は、 MOSFETQ 3と Q 2がォン状態となる電流経路で電流が流れ、 ( 4 ) の期間では、 下側アーム間の MO SFETQ2と Q4及び寄生ダ ィオードで電流が回生する この結果、 同図に示すように入力信号 V i nに対応して電流 I oが負荷に流れることになる In the above period (1), a current flows through the current path in which the MOSFETs Q1 and Q4 are turned on, and in the period (2), the MOSFETs Q1 and Q3 and the parasitic diode between the upper arms. In the period (3), current flows through the current path where the MOSFETs Q3 and Q2 are turned on. In the period (4), the MOSFETs Q2 and Q4 As a result, the current Io flows through the load in response to the input signal Vin as shown in the figure.
第 12図には、 この発明が適用された PWM制御の H型プリッジ回路 を搭載する半導体集積回路装置の一実施例のプロ 'ソク図が示されている この実施例の半導体集積回路装置は、 C D R OMノ D V D用に向け られている この実施例の半導体集積回路装置では、 スヒンドル S P N 、 フォーカス FC S、 トラック TRK、 スレッ ド SLD、 卜レイ TRY の 5つのドライバが 1チップ化されて構成される このうち位置制御の ように目標点を零として、 正と負の両方向の位置制御又は回転制御を必 要とするフォ -カス FC S、 トラック TRK、 スレッド S LD及びトレ ィ T R Yが前記のような本願発明に係る P WM制御されるァクチユエ - タ ドライ ノく'である べィァスは昇圧回路であり、 上記各ァクチュエー夕 ドライバを構成する Nチヤンネル型 MOS FETにより構成されるハー フブリ ッジ回路における上側ァ一厶のドラィバの動作電圧 V B S Tを形 成する Fig. 12 shows the PWM control H-type bridge circuit to which the present invention is applied. A process diagram of one embodiment of a semiconductor integrated circuit device equipped with a semiconductor device is shown. The semiconductor integrated circuit device of this embodiment is directed to a CDR OM DVD. , Sindle SPN, Focus FC S, Track TRK, Thread SLD, Tray TRY are integrated into one chip. Of these, the target point is set to zero as in position control. The focus FC S, the track TRK, the thread S LD and the tray TRY requiring the position control or the rotation control should be the PWM controlled actuator according to the present invention as described above. The booster circuit forms the operating voltage VBST of the upper-arm driver in the half-bridge circuit composed of the N-channel MOS FETs constituting each of the above-mentioned actuator drivers.
クロック発生回路 C L KO S Cで形成されたクロック ルス C LKを 用い、 PWMキヤリア発生回路では三角波からなる PWMキヤリア信号 を発生させる この三角波 ( PWMキヤリァ信号) は、 上記スヒンドル を含む 5つからなる全ての PWM制御回路で共有される このような回 路の共有化によって回路の簡素化を図ることができる The clock carrier circuit generates the PWM carrier signal consisting of a triangular wave using the clock signal CLK formed by the clock generator CL KO SC. This triangular wave (PWM carrier signal) is composed of all five signals including the above-mentioned sinedle. The circuit can be simplified by sharing such a circuit shared by the PWM control circuit.
この実施例では、 負荷を PWM駆動するものであるので、 消費電力が 小さく、 力、かる低消費電力に伴い発熱も小さいので上記のようにスヒン ドルモー夕駆動と 4つのァクチユエ -夕ドラィバを 1チッフの半導体集 積回路装置で構成できる この結果、 C D R 0 M, D V Dの駆動に必 要な主要なドラィ を 1つの半導体集積回路装置で形成でき、 しかもそ の実装上の制約を無くすことができるから、 かかる装置の一層の小型化 を可能にする また、 低消費電力であるので、 電池駆動される携帯電子 機器に搭載した場合に電池寿 を長くすることができる In this embodiment, since the load is driven by PWM, the power consumption is small, and the heat generation is small with the power and the low power consumption. As a result, the main drivers necessary for driving the CDR0M and DVD can be formed by one semiconductor integrated circuit device, and the mounting restrictions can be eliminated. Further, such a device can be further miniaturized. Further, since the power consumption is low, the battery life can be prolonged when the device is mounted on a portable electronic device driven by a battery.
第 1 3図には、 上記第 1 2図に示した半導体集積回路装置を用いた制 御システムを示す全体ブロック図であり、 C D— R O MZ D V Dの機構 部は前記のようなスヒンドル、 フォーカス、 トラック、 スレッド、 トレ ィのモータ、 コンボ、 全体をシステム制御するマイクロプロセッサ M P U、 サ一ボ制御を行うデジタル · シグナル ·プロセッサ D S Pで構成さ れる 特に制限されな L、が、 口ジック回路用の電源電圧 V S Sは、 5 とされ、 モ一夕 ドライブ用の電源電圧 V C Cは 5 Vと 1 2 Vの L、ずれか が用いられる FIG. 13 shows a control using the semiconductor integrated circuit device shown in FIG. FIG. 2 is a block diagram showing the entire control system. The mechanism of the CD-ROMZ DVD includes the above-mentioned Shindle, Focus, Track, Thread, Tray Motor, Combo, Microprocessor MPU that controls the entire system, and Servo It is composed of a digital signal processor DSP that performs control. There is no particular limitation, but the power supply voltage VSS for the logic circuit is 5, and the power supply voltage VCC for the drive is 5 V and 1 2 L or shift of V is used
第 1 4図には、 この発明に係る P WM制御の上記半導体集積回路装置 が搭載される C Dフレーャのスライ ド送り機構の概略構成図が示されて いる FIG. 14 is a schematic configuration diagram of a slide feed mechanism of a CD player on which the above-described semiconductor integrated circuit device under PWM control according to the present invention is mounted.
同図に示されたスライ ド送り機構は、 リニアモ一夕方式のものであり 、 アクセス性能が重視される C D R O Mには好適である 特に制限さ れないが、 構造は、 1つの軸で支持された移動体に光ヒックァッフがマ ゥン卜されている 上記移動体に駆動コィルが取り付けられ、 2つのマ グネッ 卜がサィ ドヨークに取り付けられる 上記 2つのマグネッ トの極 性に対する面が同じ極性 (例えば N ) になっており、 磁束はマグネッ ト から出てセンタヨーク サイ ドヨークのルーフ'を作り、 マグネッ 卜とセ ンタヨーク間にギヤッフが構成される The slide feed mechanism shown in the figure is of a linear motor type and is suitable for a CDROM in which access performance is important. Although not particularly limited, the structure is supported by one shaft. The optical pickup is mounted on the moving body. The drive coil is mounted on the moving body, and the two magnets are mounted on the side yoke. The polarities of the two magnets are the same. The magnetic flux exits the magnet and forms the roof of the center yoke side yoke, and a gear is formed between the magnet and the center yoke.
駆動コイルは、 上記ギヤッフの位置に置かれており、 電流を流すこと でフレミングの法則により力が発生して移動体を柊動させるリニァモー 夕を構成する 上言巳駆動コィルの反対側に速度センサとしてのコィルが 設けられており、 上記リニアモータの移動速度をモニタする 上記リニ ァモータの駆動して目的のトラックまである速度フロフアルを設定し、 その通りに移動動作させるためのフィードバックあるいは移動機構にブ レーキをかけるために上記速度センサが用いられる The drive coil is located at the position of the gear, and the current sensor generates a force according to Fleming's law when a current is applied to make the moving body move holly. A speed sensor is located on the opposite side of the drive coil. The linear motor is provided to monitor the moving speed of the linear motor. The linear motor is driven to set a certain speed profile to a target track, and a feedback or moving mechanism for moving the motor is operated as it is. The above speed sensor is used to rake
丁クセス方法の概略は次の通りである . 現在のトラックは、 サブコ一 ド Qのデ一夕からトラック数が計算されており、 ジャンブしたいァドレ スを計算し、 両トラック数を比較してジャッブすべきトラック数を算出 する この算出結果からトラッキング、 スライ ド送りのサ一ボをオフ、 (フォーカスのサーボはオン) でリニアモータにより光学系を急速に移 動させる, The outline of the access method is as follows. The number of tracks is calculated from the time of de-Q, the number of tracks to be jumped is calculated by comparing the number of tracks to be jumped, and the number of tracks to be jumped is calculated by comparing the numbers of tracks. Off, the focus servo is on, the optical system is moved quickly by the linear motor,
一方、 R F信号からエンベロープ分を取り出し、 これをカウントする ことにより、 移動した卜ラック数をカウン卜していき、 これを上記ジャ ンブすべきトラック数と逐次比較して、 その値に達したときに各サ一ボ をオンとして光学系にブレーキをかける ここで、 サブコードのデータ Qを読み取り、 目的の卜ラックとの差を計算してそれがレンズの移動の みで良い範囲 (例えば 1 0 0 卜ラック以内) かどうかを判断し、 もし範 囲外であれば、 もう一度最初のシーケンスにもどつて光学系全体をリ二 ァモータで移動させる 範囲内であれば、 二軸の急速にレンズ移動を行 い、 目的のトラックにセッ トする . つまり、 レンズ機構がフォーカス方 向とトラッキング方向に 2つの自由度を持つ二軸デべイスとされ、 上記 フォーカス F C Sとスレツ ド S L Dの制御により上言己トラックセッ 卜が 行われる On the other hand, by extracting the envelope from the RF signal and counting it, the number of tracks moved is counted, and this is sequentially compared with the number of tracks to be jumped. At this time, each servo is turned on to apply a brake to the optical system. Here, the subcode data Q is read, and the difference from the target track is calculated. (Within 0 tracks), and if out of the range, return to the first sequence again and move the entire optical system with the linear motor. The lens mechanism is a two-axis device with two degrees of freedom in the focus direction and the tracking direction. Upper word yourself track set Bok is performed by controlling the tools de S L D
上記の実施例から得られる作用効果は、 下記の通りである The operational effects obtained from the above embodiment are as follows.
( 1 ) 入力信号に応答して第 1電圧と第 2電圧とを相補的に出力させ る第 1と第 2の出力回路の出力端子間に負荷を接続してなるいわゆる H 型プリッジ回路に対して、 2つの出力回路に入力される P WM信号を同 相信号として上記負荷手段に流れる出力電流を零とし、 かかる状態を基 準にして上言己第 1と第 2の出力回路に入力される P WM信号の相対的な ハルス幅デューティ差を持たせ、 その差分に対応した電流値の出力電流 を上記負荷手段に正又は負方向に流すようにすることにより、 目標位置 に対応した零の状態を中心とし、 高応答性と高精度の出力制御を実現で (1) For a so-called H-type bridge circuit in which a load is connected between the output terminals of the first and second output circuits that output the first voltage and the second voltage complementarily in response to an input signal Then, the output current flowing through the load means is set to zero as a PWM signal input to the two output circuits as an in-phase signal, and based on such a state, the output current is input to the first and second output circuits. By giving a relative Hals width duty difference of the PWM signal to the output means having a current value corresponding to the difference in the positive or negative direction to the load means, a zero value corresponding to the target position is obtained. High responsiveness and high-accuracy output control with a focus on the state
•L 2 きるとともに、 その PWM制御による低消費電力によつて複数個を 1つ の半導体基板上に形成することが容易になると L、う効果が得られる • L 2 In addition, the low power consumption by the PWM control makes it easier to form multiple devices on one semiconductor substrate.
2 ) 上記第 1電圧を正の電源電圧とし、 上記第 1電圧を回路の接地 電位することにより、 上記高応答性と高精度の出力制御を実現しつつ、 電源電圧を有効に使用できるという効果が得られる 2) By using the first voltage as a positive power supply voltage and setting the first voltage to the ground potential of the circuit, the power supply voltage can be used effectively while realizing the high responsiveness and high-precision output control. Is obtained
( 3 ) 上記第 2出力回路の第 2の人力端子に一定のハルス幅デューテ ィの入力信号を供給し、 上記第 1の出力回路の第 1の人力端子に上記第 2の入力端子に供給されるハルス幅デューティを基準にして正又は負方 向にハルス幅デューテ ίが変化させられた P WM信号を供給することよ り、 簡単な構成で目標位置に対応した零の状態を中心とした PWM制御 による電流を負荷に流すことができるという効果が得られる (3) An input signal having a constant Hals width duty is supplied to the second input terminal of the second output circuit, and the input signal is supplied to the second input terminal to the first input terminal of the first output circuit. By supplying a PWM signal in which the Hals width duty is changed in the positive or negative direction based on the Hals width duty, the PWM with a simple configuration centered on the zero state corresponding to the target position is provided. The effect that the current by the control can flow to the load is obtained.
( 4 ) 上記負荷手段を、 位置制御を行うモータの駆動コイルとするこ とにより、 目標位置に対応した零の状態を中心として高応答性と高精度 の位置制御が実現できるという効果が得られる (4) By using the above-mentioned load means as a drive coil of a motor that performs position control, it is possible to achieve an effect that high responsiveness and high-accuracy position control can be realized centering on a zero state corresponding to a target position.
( 5 ) 上記第 1と第 2出力回路を Ρチャンネル型の MOS F ETと Ν チヤンネル型 MO S F Ε Τからなる CMO S回路で構成することにより 、 入力信号を形成する回路の簡素化を図ることができるという効果が得 られる (5) The first and second output circuits are composed of a CMOS circuit composed of a Ρchannel type MOS FET and a Νchannel type MOSF Ε る こ と, thereby simplifying a circuit for forming an input signal. The effect that can be obtained
( 6 ) 上記第 1と第 2の出力回路を Νチヤンネル型の MO S F ΕΤで 構成し、 電源電圧 (則の Νチャンネル型の Μ 0 S F Ε Τのゲートには、 上 記第 1電圧に対して上記第 1と第 3のスィ ッチ素子を構成する Νチャン ネル型 M OS FETのしき L、値電圧分以上に高くされた信号振幅の入力 ί言号を供給することにより、 出力回路のレイアウ トの簡素化を図ること ができるという効果が得られる (6) The first and second output circuits are composed of MOchannel type MO SF 、, and the power supply voltage (the Ν0 SF ゲ ー ト入 力 The first and third switch elements are configured as described above.Ν The threshold L of the channel type MOS FET, the input of the signal amplitude raised to the value voltage or more. The effect is that the layout can be simplified.
( 7) 上記第 1と第 2の入力端子と上記各スィッチ素子を構成する Μ 0 S F ΕΤのゲ一卜との間には、 上記第 1と第 2及び第 3と第 4のスィ ッチ素子を通して直流電流が流れるのを防止するための遅延回路と、 力、 かる遅延回路の遅延信号を受けて上記 M O S F E Tを駆動するための第 1〜第 4のプリ ドライバを設け、 上記第 1と第 3のブリ ドライバは、 上 記第 1電圧に対して上記しきい値電圧分以上に高くされた昇圧電圧を動 作電圧とすることにより、 直流電流の発生を防止しつつ、 電源電圧まで 有効に使用できる P WM制御を実現できるという効果が得られる (7) The first and second and the third and fourth switches are provided between the first and second input terminals and the {0 SF} gates constituting the respective switch elements. A delay circuit for preventing DC current from flowing through the switching element; and first to fourth pre-drivers for driving the MOSFET in response to a delay signal of the delay circuit. The third driver uses the boosted voltage, which is higher than the first voltage by the threshold voltage or more, as the operating voltage, thereby preventing the generation of DC current and increasing the power supply voltage. The effect of realizing effective PWM control can be obtained.
( 8 ) 人力信号を受け、 電流増幅された第 1入力 (言号を形成する第 1 の反転増幅回路と、 その出力信号を受けて電流増幅され、 上記第 1入力 ί言号とは逆相にされた第 2入力信号を形成する第 2反転増幅回路を設け 、 上記第 1入力信号と第 2入力信号を一方の入力端子に受け、 他方の入 力端子に P WMキヤリア ί言号を受ける第 1と第 2の電圧比铰回路を設け て、 上記第 1と第 2の出力回路に ί云える入力信号とすることにより、 電 源電圧をフルスケールで使用でさる Ρ \\'Μ制御が可能になるという効果 が得られる (8) The first input that receives the human power signal and is current amplified (the first inverting amplifier circuit that forms the signal, the current is amplified by receiving the output signal, and the phase of the first input is reversed. A second inverting amplifier circuit for forming a second input signal is provided, the first input signal and the second input signal are received at one input terminal, and the other input terminal receives a PWM carrier signal. By providing the first and second voltage ratio circuits and making the input signals visible to the first and second output circuits, the power supply voltage can be used at full scale. Is possible
( 9 ) 上記負荷手段と上記第 の出力回路の第 2の出力端子との間に 電流検出用抵抗素子を設け、 上記電流検出用抵抗素子により形成された 検出電圧を受け、 上記第 1の反転増幅回路に負帰還する帰還回路を更に 設けることにより、 負荷電流を負荷ィンヒ一ダスに影響されないで制御 することができるという効果が得られる (9) A current detecting resistor element is provided between the load means and the second output terminal of the second output circuit, and a detection voltage formed by the current detecting resistor element is received, and the first inversion is performed. By providing a feedback circuit for negative feedback to the amplifier circuit, the load current can be controlled without being affected by the load inductance.
( 10) 上記負荷手] ¾の両端の電圧を平滑し、 その電圧差に対応した帰 還信号を形成して上記第 1の反転入力回路に負帰還する帰還回路を更に 設けることにより、 良荷に流れる電流を電源電圧に影響されな 、で制御 することができるという効果が得られる (10) The load is smoothed by applying a feedback circuit that forms a return signal corresponding to the voltage difference and negatively feeds back to the first inverting input circuit. The current flowing through the power supply can be controlled without being affected by the power supply voltage.
( 11 ) 上言己負荷手段の一端の電圧を平滑し、 上記第 1の電圧と第 2の 電圧との中点電圧との差電圧に対応した帰還信号を形成して上記第 1の 反転入力回路に負帰還する'帰還回路を更に設けることにより、 負荷に流 (11) The voltage at one end of the self-load means is smoothed, and a feedback signal corresponding to a difference voltage between the first voltage and the midpoint voltage between the first voltage and the second voltage is formed to form the first inverting input. By providing a feedback circuit that negatively feeds back to the circuit,
I 4 れる電流を電源電圧に影響されないで制御しつつ、 帰還ルーフに設けら れる P WMキャリア信号を除去するためのキヤハシ夕とそれを接続する ための外部端子を 1つに減らすことができるという効果が得られる (12) 入力信号に応答して第 1電圧と第 2電圧とを相補的に出力させ る第 1と第 2の出力回路の出力端子間に負荷を接続してなるいわゆる H 型プリッジ回路に対して、 2つの出力回路に入力される P WM信号を同 相信号として上記負荷手段に流れる出力電流を零とし、 かかる状態を基 準にして上記第 1と第 2の出力回路に人力される P WM信号の相対的な ハルス幅デューティ差を持たせ、 その差分に対応した電流値の出力電流 を上記負荷手段に正又は負方向に流すよう回路を複数個と、 スピンドル モー夕駆動制御回路と、 上記の P WM制卸回路に P WMキヤリアを共通 に供給する P WMキヤリァ ί言号発生回路とを 1つの半導体集積回路 (半 導体基板) に形成することにより、 回路の共通化による回路の簡素化を 図りつつ、 それが搭載される C D R O M, D V Dの小型化を図ること ができるという効果が得られる I 4 The effect of this is that while controlling the current that is not affected by the power supply voltage, it is possible to reduce the number of capacitors provided for removing the PWM carrier signal provided on the feedback roof and the number of external terminals for connecting it to one. (12) A so-called H-type bridge circuit in which a load is connected between the output terminals of the first and second output circuits that output the first voltage and the second voltage complementarily in response to the input signal On the other hand, the output current flowing through the load means is set to zero by using the PWM signals input to the two output circuits as in-phase signals, and the first and second output circuits are manually operated based on such a state. A plurality of circuits for providing a relative Hals width duty difference of the PWM signal and flowing an output current having a current value corresponding to the difference in the positive or negative direction to the load means, and a spindle motor drive control circuit. And the above-mentioned PWM control circuit By forming the PWM carrier that supplies the PWM carrier in common to the symbol generation circuit on one semiconductor integrated circuit (semiconductor substrate), the circuit can be simplified by sharing the circuit. CDROM and DVD mounted can be downsized.
以上本発明者よりなされた発明を実施例に基づき具体的に説明したが 、 本願発明は前記実施例に限定されるものではなく、 その要旨を逸脱し ない範囲で種々変更可能であることはいうまでもない 例えば、 M O S F E Tは、 半導体基板の主面に沿つて電流を流す、 L、わゆる横型の M 0 S F E Tの他、 半導体基板の主面と垂直方向に電流を流す、 し、わゆる縦 型の M O S F E Tであってもよい H型プリッジ回路を構成するスィッ チ素子は、 上記 M 0 S F E Tに限定されずべィホーラ型トランジスタ等 のような他のスィッチ素子に置き換えることも可能である Although the invention made by the inventor has been specifically described based on the embodiment, the invention of the present application is not limited to the embodiment, and it can be said that various modifications can be made without departing from the gist of the invention. For example, MOSFETs flow current along the main surface of the semiconductor substrate, L, so-called horizontal M 0 SFETs, as well as flow current perpendicular to the main surface of the semiconductor substrate, and The switch element constituting the H-type bridge circuit, which may be a MOSFET, is not limited to the above-mentioned M 0 SFET, but can be replaced with another switch element such as a bayora type transistor.
H型プリッジ回路に供給される P WM信号を形成する回路は、 種々の 実施例形態を採ることができる 駆動回路 (H型ブリ ッジ回路) とそれ をドライブする P WM制御回路を含む P WM制御シスチ厶は、 前記第 1 The circuit that forms the PWM signal supplied to the H-type bridge circuit includes a driving circuit (H-type bridge circuit) that can adopt various embodiments and a PWM circuit that includes a PWM control circuit that drives the driving circuit. The control system is the first
I 5 3図のように 1つの半導体集積回路装置に形成するものの他、 H型ブリ ッジ回路とそれに人力される P WM信号を形成する回路とを别々の半導 体集積回路装置に形成するものであってもよい 産業上の利用可能性 I 5 In addition to those formed in one semiconductor integrated circuit device as shown in Fig. 3, those in which an H-type bridge circuit and a circuit that forms a PWM signal to be manually operated are formed in various semiconductor integrated circuit devices. May be industrial availability
この発明は、 位置決め制御のように目標位置に対応した零を中心とし て正負の出力電流を形成する P WM制御回路を用いた H型プリッジ回路 及びそれ力《搭載される半導体集積回路装置に広く利用することができる The present invention is widely applied to an H-type bridge circuit using a PWM control circuit that forms positive and negative output currents centering around zero corresponding to a target position, such as positioning control, and a semiconductor integrated circuit device mounted thereon. Can be used
2 0 2 0
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP1999/002807 WO2000074222A1 (en) | 1999-05-27 | 1999-05-27 | H-type bridge circuit and integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP1999/002807 WO2000074222A1 (en) | 1999-05-27 | 1999-05-27 | H-type bridge circuit and integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2000074222A1 true WO2000074222A1 (en) | 2000-12-07 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP1999/002807 Ceased WO2000074222A1 (en) | 1999-05-27 | 1999-05-27 | H-type bridge circuit and integrated circuit |
Country Status (1)
| Country | Link |
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| WO (1) | WO2000074222A1 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003061103A3 (en) * | 2002-01-02 | 2003-10-16 | Bae Systems Plc | A switching circuit and a method of operation thereof |
| WO2003061123A3 (en) * | 2002-01-02 | 2004-06-24 | Bae Systems Plc | A switching circuit and a method of operation thereof |
| JP2006197680A (en) * | 2005-01-12 | 2006-07-27 | Rohm Co Ltd | Actuator drive circuit |
| US7187567B2 (en) | 2002-01-02 | 2007-03-06 | Bae Systems Plc | Operation of a current controller |
| CN100356671C (en) * | 2004-08-06 | 2007-12-19 | 台达电子工业股份有限公司 | Improvement method of drive circuit |
| JP2011206622A (en) * | 2010-03-29 | 2011-10-20 | Toto Ltd | Electrolytic water generator |
| CN104638993A (en) * | 2015-02-10 | 2015-05-20 | 中国航天科技集团公司第九研究院第七七一研究所 | Commutation control circuit and method for direct current motor |
| JP2015192317A (en) * | 2014-03-28 | 2015-11-02 | ミネベア株式会社 | Protection circuit and drive circuit |
| JP2017531895A (en) * | 2014-09-30 | 2017-10-26 | オラクル・インターナショナル・コーポレイション | Power amplifier for optical recording head actuator |
| CN114221529A (en) * | 2021-12-16 | 2022-03-22 | 珠海格力电器股份有限公司 | Bridge circuit driving method, bridge circuit driving device, bridge circuit control system and ultrasonic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7692337B2 (en) | 2002-01-02 | 2010-04-06 | Bae Systems Plc | Switching circuit and a method of operation thereof |
| WO2003061123A3 (en) * | 2002-01-02 | 2004-06-24 | Bae Systems Plc | A switching circuit and a method of operation thereof |
| US7187567B2 (en) | 2002-01-02 | 2007-03-06 | Bae Systems Plc | Operation of a current controller |
| US7348689B2 (en) | 2002-01-02 | 2008-03-25 | Bae Systems Plc | Switching circuit and a method of operation thereof |
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| CN100356671C (en) * | 2004-08-06 | 2007-12-19 | 台达电子工业股份有限公司 | Improvement method of drive circuit |
| JP2006197680A (en) * | 2005-01-12 | 2006-07-27 | Rohm Co Ltd | Actuator drive circuit |
| JP2011206622A (en) * | 2010-03-29 | 2011-10-20 | Toto Ltd | Electrolytic water generator |
| JP2015192317A (en) * | 2014-03-28 | 2015-11-02 | ミネベア株式会社 | Protection circuit and drive circuit |
| JP2017531895A (en) * | 2014-09-30 | 2017-10-26 | オラクル・インターナショナル・コーポレイション | Power amplifier for optical recording head actuator |
| CN104638993A (en) * | 2015-02-10 | 2015-05-20 | 中国航天科技集团公司第九研究院第七七一研究所 | Commutation control circuit and method for direct current motor |
| CN114221529A (en) * | 2021-12-16 | 2022-03-22 | 珠海格力电器股份有限公司 | Bridge circuit driving method, bridge circuit driving device, bridge circuit control system and ultrasonic equipment |
| CN114221529B (en) * | 2021-12-16 | 2024-05-03 | 珠海格力电器股份有限公司 | Driving method and device of bridge circuit, control system and ultrasonic equipment |
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