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WO2000042632A1 - Procede et dispositif servant a generer et a confiner un gaz reactif servant a graver des substrats - Google Patents

Procede et dispositif servant a generer et a confiner un gaz reactif servant a graver des substrats Download PDF

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Publication number
WO2000042632A1
WO2000042632A1 PCT/US2000/000744 US0000744W WO0042632A1 WO 2000042632 A1 WO2000042632 A1 WO 2000042632A1 US 0000744 W US0000744 W US 0000744W WO 0042632 A1 WO0042632 A1 WO 0042632A1
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WO
WIPO (PCT)
Prior art keywords
reactive gas
substrate
reactive
gas
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2000/000744
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English (en)
Other versions
WO2000042632B1 (fr
Inventor
William G. America
Edward J. Gratrix
Michael D. Robbins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ipec Precision Inc
Original Assignee
Ipec Precision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ipec Precision Inc filed Critical Ipec Precision Inc
Priority to AU25035/00A priority Critical patent/AU2503500A/en
Publication of WO2000042632A1 publication Critical patent/WO2000042632A1/fr
Publication of WO2000042632B1 publication Critical patent/WO2000042632B1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing

Definitions

  • the present invention relates to a method and apparatus for controlled material removal from the surface of a substrate over a confined region. More particularly, the present invention relates to a method and apparatus for generating and confining a reactive gas which is used for removing material from the surface of a substrate.
  • chemomechanical processes for thinning semiconductor films is a contact method that leaves contaminants on the surface which cause subsurface damage to the substrate. Also, chemomechanical thinning processes do not allow corrections of the spatial variations within the film thickness.
  • U.S. Pat. No. 4,668,336 discloses a method and apparatus for figuring a surface by plasma assisted chemical transport where the substrate surface is mounted in close proximity to at least one electrode of an radio frequency (rf) driven reactor having two parallel plate electrodes. Removal of material from the surface of a substrate is controlled by varying the amount of time an electrode with small surface area spends at a given region wherein the entire surface of the substrate is exposed to a reactive gas which in the presence of an rf field between the two electrodes forms a plasma. Thus, material removal is effected by a plasma which is generated at the surface where material removal is desired.
  • a disadvantage to the invention disclosed therein is that the profile of the surface where the material has been removed may not be precisely controlled.
  • U.S. Patent No. 5,336,355 discloses a plasma assisted chemical etching device which confines the etching plasma to a local surface area of the substrate surface. The local confinement allows control of the material removal footprint and, thus, the control of the profile of the surface where material has been removed. Because the device disclosed therein is of the type where the plasma excitation occurs by rf discharge directly coupled to the substrate (the local substrate surface is effectively an electrode where the reaction is occurring), underlying surface structure may cause variations in the material removal rate which is a primary cause of "print through" problems.
  • a problem with downstream etching disclosed in these patents is that the reactive gas may uncontrollably etch areas of the substrate in which etching is not desired. Etching outside a desired region occurs because such reactive gas is not confined to the desired etching region.
  • the present invention incorporates the advantages of decoupled plasma assisted chemical etching with a means to perform confined local etching so as to correct spatial errors in a substrate surface or correct the thickness profile of a film on a substrate.
  • One object of the present invention is to provide a means for performing a plasma assisted chemical etching reaction.
  • Another object of the present invention is to provide a means for material removal by a chemically reactive species from a plasma generated independent of the electrical and geometric characteristics of the substrate.
  • the aforementioned objects are also accomplished, at least in part, by a method for performing etching reactions in a predetermined etching region on the surface of an etchable substrate with a reactive gas.
  • the method comprises the steps of generating a reactive gas capable of etching the etchable substrate, applying the reactive gas to the etchable substrate, and flowing a non-reactive gas towards the substrate in the form of a non-reactive gas curtain around the reactive gas so as to substantially confine the reactive gas to the predetermined etching region on the substrate.
  • the aforementioned objects are accomplished, at least in part, by an apparatus for performing etching reactions in a predetermined etching region on the surface of an etchable substrate with a reactive gas.
  • the apparatus includes, in part, a means, such as a plasma chamber, for generating a reactive gas capable of etching the etchable substrate.
  • the apparatus also includes a means, such as a reactive gas transfer conduit, for applying the reactive gas to the etchable substrate.
  • the apparatus further includes a means, such as a gas curtain channel, for confining the reactive gas to the predetermined etching region on the etchable substrate.
  • FIG. 1 which is a schematic diagram of an etching apparatus according to the present invention.
  • FIG. 2 which is a schematic plan view of the etching apparatus illustrated in FIG. 1, taken along the line 2—2;
  • FIG. 3 which is an enlarged partial schematic diagram of a portion of the etching apparatus shown in FIG. 1 illustrating confinement of the reactive gas to the predetermined etching region on the substrate;
  • FIG. 4 which is a schematic plan view of the substrate shown in FIG. 3, taken along the line 3—3 to illustrate the predetermined etching area on the substrate relative to the boundary of a confining gas curtain directed at the substrate.
  • FIGS. 1 through 3 illustrate an apparatus 10 for performing local etching of a substrate to remove material therefrom.
  • the apparatus comprises a plasma chamber 12 wherein a plasma 14 is generated to subsequently generate a reactive gas RG capable of etching a substrate.
  • the plasma chamber 12 is bounded by an upper electrode 16, an insulator member 18 and a lower electrode 20.
  • the upper and lower electrodes are connected to a radio frequency (rf) signal source 22.
  • a reactive gas precursor RGP is introduced into the plasma chamber 12 via an inlet 24.
  • the excitation of the reactive gas precursor into a plasma by exposure to the radio frequency signal converts at least some of the reactive gas precursor RGP into the reactive gas RG containing chemically active species which will react with the substrate to cause etching thereof.
  • Nitrogen trifluoride (NF 3 ) is one example of a reactive gas precursor.
  • the reactive gas RG, containing active fluorine ions in the case where NF 3 is the reactive gas precursor RGP, is flowed out of the chamber 12 through a reactive gas transfer conduit 26 having opening 28 which is positioned near a substrate 30 mounted on a substrate holder or platen 32 which is grounded.
  • the plasma 14 and reactive gas RG are generated "upstream" independent of the substrate 30.
  • the apparatus 10 includes a gas curtain channel 34 which surrounds the opening 28 of the reactive gas transfer conduit 26 for confining the reactive gas.
  • the gas curtain channel 34 is connected to a non- reactive gas source (not shown).
  • non- reactive gas means a gas that does not react with the substrate 30. Examples of such gasses may include nitrogen, argon or hydrogen. If hydrogen is used, the chemically active species in the reactive gas RG, such as the fluorine ions, may be inactivated by reacting such ions with the hydrogen to form hydrogen fluoride or by releasing fluorine from the fluorine containing reactive species to form non- reactive F 2 .
  • the gas curtain channel is 34 configured or adapted to direct the non- reactive gas towards the substrate 30 and around the reactive gas flowing out of the opening 28 of the gas transfer conduit 26 in the form of a non-reactive gas curtain GC.
  • the non-reactive gas curtain GC surrounding the reactive gas prevents the reactive gas from flowing in contact with the substrate 30 beyond the non-reactive gas curtain GC, thereby confining the reactive gas RG to a predetermined etching region PER (FIG. 3).
  • the gas curtain channel 34 is annularly shaped and surrounds the circularly shaped opening 28 of the reactive gas transfer conduit 26.
  • other shapes such as elliptical, rectangular, triangular, etc. may be used, if desired.
  • the shape of the gas curtain channel 34 be configured in a manner which cooperates best with the configuration of the opening 28 of the reactive gas transfer conduit 26. For example, if the opening 28 is square shaped, then the gas channel 34 should be similarly shaped.
  • the apparatus may be provided with an exhaust channel 36 disposed between the gas curtain channel 34 and the opening 28 of the reactive gas transfer conduit 26.
  • the exhaust channel 36 may be connected to a vacuum source (not shown) so as to provide a region of relatively lower pressure at the exhaust channel 36 to draw reactive and non- reactive gases from the region between the apparatus and the substrate 30 at the border of the predetermined etching region PER.
  • the exhaust channel 36 surrounds the opening 28 of the reactive gas transfer conduit 26 and like the gas curtain channel 34, the shape of the exhaust channel 36 should be configured in a manner which cooperates best with the configuration of the opening 28 of the reactive gas transfer conduit 26. For example, if the opening 28 is square, then the exhaust channel 36 should be similarly shaped.
  • the above described apparatus 10 enables etching reactions to be performed in a predetermined etching region on the surface of an etchable substrate 30 with a reactive gas which is preferably generated from a plasma "upstream” from the substrate 30 and thereby decoupled from the substrate.
  • a reactive gas capable of etching the etchable substrate is generated. This generation is preferably performed using a decoupled "upstream” plasma converting a reactive gas precursor, such as NF 3 , into a reactive gas containing chemically active species suitable for etching the substrate.
  • the reactive gas generated "upstream” is flowed "downstream” and applied to the etchable substrate.
  • FIG. 4 illustrates the boundary of the predetermined etching region PER and the boundary of the gas curtain GC.
  • the reactive gas and non-reactive gas forming the gas curtain may be exhausted from the substrate, if desired.
  • the flow rates of the reactive gas RG, non-reactive gas forming the gas curtain GC and the rate at which such gases are exhausted from the substrate 30 will have an influence on the size of the predetermined etching region PER, which is also affected by the distance between the opening 28 of the reactive gas transfer conduit and the substrate 30. Optimization of the size of the predetermined etch region PER may be determined from routine experimentation adjusting the flow rates of the above mentioned gases to and from the substrate 30 as well as the distance between the opening 28 and the substrate.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

L'invention concerne un procédé servant à exécuter des réactions localisées de gravure sur un substrat par confinement d'un gaz réactif au moyen d'un rideau de gaz non réactif. Ce procédé consiste à générer un gaz réactif capable de graver le substrat ; à appliquer ce gaz réactif au substrat ; à laisser s'écouler un gaz non réactif vers le substrat sous forme d'un rideau de gaz non réactif autour du gaz réactif, de manière à confiner pratiquement le gaz réactif à une zone prédéterminée de gravure sur le substrat. Elle concerne également un dispositif servant à mettre en application ce procédé.
PCT/US2000/000744 1999-01-12 2000-01-12 Procede et dispositif servant a generer et a confiner un gaz reactif servant a graver des substrats Ceased WO2000042632A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU25035/00A AU2503500A (en) 1999-01-12 2000-01-12 Method and apparatus for generating and confining a reactive gas for etching substrates

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22830499A 1999-01-12 1999-01-12
US09/228,304 1999-01-12

Publications (2)

Publication Number Publication Date
WO2000042632A1 true WO2000042632A1 (fr) 2000-07-20
WO2000042632B1 WO2000042632B1 (fr) 2000-10-19

Family

ID=22856617

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/000744 Ceased WO2000042632A1 (fr) 1999-01-12 2000-01-12 Procede et dispositif servant a generer et a confiner un gaz reactif servant a graver des substrats

Country Status (2)

Country Link
AU (1) AU2503500A (fr)
WO (1) WO2000042632A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2362411A1 (fr) * 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Appareil et procédé de gravure ionique réactive
WO2013085885A1 (fr) * 2011-12-08 2013-06-13 Mks Instruments, Inc. Appareil injecteur de gaz pour applicateur de plasma
US8956456B2 (en) 2009-07-30 2015-02-17 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Apparatus and method for atomic layer deposition
US9297077B2 (en) 2010-02-11 2016-03-29 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Method and apparatus for depositing atomic layers on a substrate
US9416449B2 (en) 2010-02-18 2016-08-16 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Continuous patterned layer deposition
WO2016188848A1 (fr) * 2015-05-22 2016-12-01 Daniel Daferner Réacteur et procédé de traitement d'un substrat

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0312066A2 (fr) * 1987-10-15 1989-04-19 Etec Systems, Inc. Anneau de garde pour un appareil comportant un joint à pompage différentiel
EP0546852A1 (fr) * 1991-12-13 1993-06-16 Hughes Aircraft Company Méthodes et appareils pour générer un plasma pour la conformation rapide de surfaces de substrats et le films en mode "downstream"
EP0546842A1 (fr) * 1991-12-13 1993-06-16 Hughes Aircraft Company Méthodes et appareils de confinement du domaine de découpage par plasma pour la conformation précise de surfaces de substances
US5302237A (en) * 1992-02-13 1994-04-12 The United States Of America As Represented By The Secretary Of Commerce Localized plasma processing
EP0975016A1 (fr) * 1998-07-21 2000-01-26 Speedfam Co., Ltd. Procédé et dispositif de planarisation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0312066A2 (fr) * 1987-10-15 1989-04-19 Etec Systems, Inc. Anneau de garde pour un appareil comportant un joint à pompage différentiel
EP0546852A1 (fr) * 1991-12-13 1993-06-16 Hughes Aircraft Company Méthodes et appareils pour générer un plasma pour la conformation rapide de surfaces de substrats et le films en mode "downstream"
EP0546842A1 (fr) * 1991-12-13 1993-06-16 Hughes Aircraft Company Méthodes et appareils de confinement du domaine de découpage par plasma pour la conformation précise de surfaces de substances
US5302237A (en) * 1992-02-13 1994-04-12 The United States Of America As Represented By The Secretary Of Commerce Localized plasma processing
EP0975016A1 (fr) * 1998-07-21 2000-01-26 Speedfam Co., Ltd. Procédé et dispositif de planarisation

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8956456B2 (en) 2009-07-30 2015-02-17 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Apparatus and method for atomic layer deposition
US9297077B2 (en) 2010-02-11 2016-03-29 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Method and apparatus for depositing atomic layers on a substrate
US9803280B2 (en) 2010-02-11 2017-10-31 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Method and apparatus for depositing atomic layers on a substrate
US10676822B2 (en) 2010-02-11 2020-06-09 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Method and apparatus for depositing atomic layers on a substrate
US9416449B2 (en) 2010-02-18 2016-08-16 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Continuous patterned layer deposition
EP2362411A1 (fr) * 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Appareil et procédé de gravure ionique réactive
WO2011105908A1 (fr) * 2010-02-26 2011-09-01 Nederlandse Organisatie Voor Toegepast- Natuurwetenschappelijk Onderzoek Tno Appareil et procédé pour gravure à ions réactifs
US9761458B2 (en) 2010-02-26 2017-09-12 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Apparatus and method for reactive ion etching
WO2013085885A1 (fr) * 2011-12-08 2013-06-13 Mks Instruments, Inc. Appareil injecteur de gaz pour applicateur de plasma
CN103975413A (zh) * 2011-12-08 2014-08-06 Mks仪器股份有限公司 用于等离子体施加器的气体喷射器设备
JP2015500557A (ja) * 2011-12-08 2015-01-05 エム ケー エス インストルメンツインコーポレーテッドＭｋｓ Ｉｎｓｔｒｕｍｅｎｔｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマ・アプリケーター用のガス注入器
WO2016188848A1 (fr) * 2015-05-22 2016-12-01 Daniel Daferner Réacteur et procédé de traitement d'un substrat

Also Published As

Publication number Publication date
AU2503500A (en) 2000-08-01
WO2000042632B1 (fr) 2000-10-19

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