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WO1999039413A2 - Lasers ii-iv possedant des structures a guidage par l'indice - Google Patents

Lasers ii-iv possedant des structures a guidage par l'indice Download PDF

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Publication number
WO1999039413A2
WO1999039413A2 PCT/IB1999/000095 IB9900095W WO9939413A2 WO 1999039413 A2 WO1999039413 A2 WO 1999039413A2 IB 9900095 W IB9900095 W IB 9900095W WO 9939413 A2 WO9939413 A2 WO 9939413A2
Authority
WO
WIPO (PCT)
Prior art keywords
layer
guiding
semiconductor
atop
cladding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB1999/000095
Other languages
English (en)
Other versions
WO1999039413A3 (fr
Inventor
Kevin W. Haberern
Raymond Van Roijen
Sharon J. Flahmholtz
Paul F. Baude
Michael A. Haase
Greg M. Halugein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Philips AB
Philips Svenska AB
Original Assignee
Koninklijke Philips Electronics NV
Philips AB
Philips Svenska AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips AB, Philips Svenska AB filed Critical Koninklijke Philips Electronics NV
Publication of WO1999039413A2 publication Critical patent/WO1999039413A2/fr
Publication of WO1999039413A3 publication Critical patent/WO1999039413A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H10H20/0125—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials with a substrate not being Group II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser

Definitions

  • the invention relates to II-VI light emitting devices especially II-VI semiconductor lasers having index-guided structures.
  • This patent shows a II-VI compound semiconductor laser diode comprising a semiconductor substrate of a first conductivity type a first cladding layer of II-VI semiconductor of this first conductivity type provided on the substrate, a first guiding layer of II-VI semiconductor of this first conductivity type provided on the first cladding layer, an active layer of II-VI semiconductor (quantum well layer) provided on the first guiding layer, a second guiding layer of II-VI semiconductor of a second conductivity type opposite to the first conductivity type provided on the active layer, a second cladding layer of II-VI semiconductor of the second conductivity type provided on the second guiding layer, a ridge (mesa) formed in at least one of the layers of the II-VI semiconductor and having side walls extending to the first guiding layer, a first electrode provided on the substrate at the surface thereof opposite from the second cladding layer, a semiconductor contact
  • the sides of the ridge or mesa shown in this patent extend down to the second guiding layer, thus entirely covering the quantum well or active layer. Therefore none of this active layer extends laterally from the sides of the ridge for this active layer and is covered by the burying layer only at its sides.
  • the buried-ridge lasers disclosed in this patent have been shown to emit blue- green radiation at relatively low threshold currents. It has been found, however, that these lasers suffer from the problems of relatively short lives.
  • the etched edge of the active layer being immediately adjacent to the active region of the device allows high surface recombination which degrades the performance and reliability of the device. In fact, it has been found that it is very difficult to produce any useful device with a long lifetime in this manner.
  • a light emitting device comprises a II-VI semiconductor active layer, an active region of the active layer where light is generated with a portion of the active layer extending for a distance greater than a carrier diffusion length beyond the active region but terminating at a distance from the active region so as to minimize the area from which defects may affect the device.
  • the light emitting device comprises a laser structure having a semiconductor substrate of a first conductivity type, a first cladding layer of II-VI semiconductor of this first conductivity type provided on this substrate, a first guiding layer of II-VI semiconductor provided on top of this first cladding layer, an active layer of II-VI semiconductor provided on this first guiding layer, a second guiding layer of II-VI semiconductor provided on top of the active layer, a second cladding layer of II-VI semiconductor of a second conductivity type opposite to that of the first conductivity type provided on top of the second guiding layer, an active region of the active layer which confines injected carriers and an optical field and a portion of the active layer extending laterally at least at a distance greater than a carrier diffusion length beyond the active region, but terminating at a distance from the active region so as to minimize the area from which defects may effect the device. Typically this distance is less that 100 m.
  • a laser structure which comprises a substrate of a first conductivity type, a first cladding layer of II-VI semiconductor of this first conductivity type provided on top of the substrate, a first guiding layer of II-VI semiconductor provided on top of the first cladding layer, an active layer of II-VI semiconductor provided on top of the first guiding layer, a second guiding layer provided on top of a portion of the active layer, a second cladding layer of a second conductivity type opposite to that of the first conductivity type provided on top of the second guiding layer, the second guiding layer and the second cladding layer forming a mesa with side walls extending to, but not through, the active layer, a portion of the active layer extending laterally a distance more than a carrier diffusion length from the side walls but terminating at a distance from the side walls so as to minimize the area in which defects may effect the device and a burying layer of electrically insulating material covering the side walls of the mesa and exposed surfaces of the
  • laser diodes are provided in which electrode layers are provided on the surface of the mesa and on the surface of the substrate opposite to that from the first cladding layer.
  • a still further aspect of the invention relates to methods of forming the novel laser structure of the invention.
  • a first cladding layer of II-VI semiconductor of a first conductivity type is provided on top of a substrate of this first conductivity type.
  • a first guiding layer of II-VI semiconductor is provided at the top of the first cladding layer.
  • An active layer of II-VI semiconductor is provided on top the first guiding layer.
  • a second guiding layer of II- VI semiconductor is provided on top the active layer.
  • a second cladding layer of II-VI semiconductor of the second conductivity type opposite to that of the first conductivity type is provided the top the second guiding layer.
  • a series of separated photoresist each of the width of about 2-10 ⁇ m spaced from each other about 200-400 ⁇ m are provided on top of the second cladding layer.
  • the exposed areas of the second cladding layer are etched substantially into but not through the second cladding layer.
  • These resists are then removed from the second cladding layer.
  • Additional photoresists, each with the width of at least two carrier diffusion lengths less than that of the first Photoresists, are then provided at the centers of location of the first Photoresists on the remaining portions of the original surface of the second cladding layer.
  • Isotropic etching is then carried out of the exposed areas of the second cladding layer and of the underlying areas of the second guiding layer and active layer so as to form a series of mesas with sides extending to, but not into, the active layer, exposed surfaces of the active layer extending laterally at least one diffusion length from each side of the mesa.
  • the additional Photoresists are then removed.
  • a burying layer of electrically insulating material is then provided along the sides of the mesas and so as to cover the exposed surfaces of the active layer.
  • a series of buried ridge waveguide II-VI laser structures are formed. The resultant laser structures are then separated from each other.
  • a first cladding layer, a first guiding layer, an active layer, a second guiding layer and a second cladding layer as employed in the first described method are provided, in the manner described therein on a substrate of a first conductivity type with the provision that the second cladding layer contains magnesium and the second guiding layer is free of magnesium.
  • a series of Photoresists, each of a width of about to 2 to 10 m and separated from each other by about 200 to 400 m is provided on top of the second cladding layer.
  • the second cladding layer is selectively etched with an aqueous solution that includes HX, X being chlorine or bromine, with respect to the underlying second guiding layer.
  • HX being chlorine or bromine
  • partial etching of the second cladding layer with an ion beam or another liquid etch may be carried out prior to etching with the HX solution. Such preliminary etching provides the advantages of a higher resolution and a higher etch rate.
  • Photoresists are then removed.
  • a second series of Photoresists are then positioned on the remaining surfaces of the second cladding layer in the manner of the first- described method and isotropic etching in the manner as described in that method is then carried out.
  • a burying layer of an electrically insulating material is then provided along the sides of the mesas and exposed surfaces of the active layer so as to also form a series of buried ridge waveguide II-VI laser structures. These laser structures are the separated from each other.
  • Laser diodes may be formed by providing electrode layers on the surfaces of the mesas and on the surface of the substrate remote from the first cladding layer prior to separating the laser structures from each other.
  • laser diodes are formed by providing a contact layer on the surface of the second cladding layer prior to etching, etching to form mesas with surfaces of the contact layer, depositing electrode layers on the mesas and on the surface of the substrate remote from the first cladding layer and then separating the resultant laser structures from each other.
  • Figs la-lb are cross-sectional views showing stages in the fabrication of a laser structure of the invention.
  • Fig 2 is a cross-sectional view of a II-VI semiconductor laser structure of the invention.
  • Fig 3 is a cross-sectional view of a II-VI semiconductor laser diode of the invention.
  • the substrate for the laser structure and laser diode of the invention may be formed of GaAs or ZnSe but preferably the substrate is formed of GaAs.
  • the substrate may be p-doped or n-doped but preferably is n-doped.
  • Zn Mg S Se Zn Mg Be Se, Zn Mn Be Se, Zn MgS Se
  • Zn MgS Se Zn MgS Se
  • Zn S Se As the material for the guiding layers Zn S Se, Zn Mg S Se, ZnMgBe Se may be used. However, the Zn S Se guiding layers of the Gaines patent are considered to be particularly suitable.
  • the active layer may be formed of Zn Se or Zn Cd Se or ZnCdSSe.
  • ZnCdSe active layer described in the Gaines patent is considered to be particularly suitable.
  • n-dopant for the guiding layers and cladding layers I, F, Br, or Cl may be employed, Cl being preferred.
  • Cl ZnCl may be used.
  • a p-dopant for the cladding and guiding layers N may be used.
  • an n-type dopant preferably Si, is employed for the substrate.
  • each of the layers may be varied according to the desired use of the device. It has been found that particularly useful devices may be formed with a n-type cladding layer of 0.3-1 ⁇ m provided on an n-doped substrate of Ga As, an n-type guiding layer of 0.1 ⁇ m to 6.5 ⁇ m provided on this cladding layer, an active layer of 20-50A provided on this guiding layer, a p-type guiding layer of 0.1-0.5 ⁇ m provided on the active layer, and a p- type cladding layer of 0.3-1 ⁇ m provided on the p-type guiding layer.
  • an electrode layer such as In, Au or Pd/Au is provided on the surface of the substrate remote from the cladding layer provided thereon.
  • An electrode layer such as Au and a contact layer are provided on the surface of the mesa. It has been found that for the contact layer the combination of an inner layer of ZnSe provided on the same mesa surface, an outer layer of ZnTe and a graded intermediate layer of ZnTeSe (with the ratio of Te to Se increasing in the direction of the ZnTe outer layer) provided between the inner and outer layer is preferred. Such a combination is described in U.S. Patent 5,548,137, the contents of which are hereby incorporated by reference. The fabrication of a preferred embodiment of a laser structure and of a laser diode of the invention will now be described with reference to Figures la, lb, 2 and 3 of the drawing which are not to scale.
  • a GaAs substrate 1 n-doped with Si is provided with a thin, 500-3000A thick, buffer layer of GaAs 2 n-doped with Cl.
  • a first cladding layer 3 of 0.8 ⁇ m thick quaternary ZnMgSSe n-doped with Cl is provided on the buffer layer 2.
  • a first guiding layer 4 of 0.15 ⁇ m thick ternary ZnSSe n-doped with Cl is provided on the first cladding layer 3.
  • An undoped active layer 5 of ternary ZnCdSe of a thickness of about 20A was provided on the first guiding layer 4.
  • a second guiding layer 6 of 0.15 ⁇ m thick ternary ZnSSe p-doped with N+ is provided on the active layer 6.
  • a second cladding layer 7 of 0.8 ⁇ m thick quaternary ZnMgSSe p-doped with N+ was provided on the second guiding layer 6.
  • a series of photoresists 8, only two of which are shown in Fig. la, each of a width of 10 ⁇ m and spaced 300 ⁇ m apart are provided on the contact layer 7.
  • the photoresists 8 were formed of OCG resist.
  • Etching of the exposed areas of the second cladding layer 7 was then carried out with the isotropic etch described in page 6, line 16-page 7, line 2 of Tijburg et al.
  • mesas 11 having sidewalls 10 spaced about 10 ⁇ m were formed in the second cladding layer 7.
  • portions 9 of the second cladding layer extending laterally from the sidewalls 10 were formed.
  • Second photoresists 12 each of a width of 5 ⁇ m were then positioned on the centers of the remaining surfaces of the second cladding layer that form the surfaces of the mesas 11.
  • a burying layer 16 of A1 2 0 3 was then deposited on the side walls of the mesa and exposed surfaces of the portions 13 and 14 to a depth of about .8 ⁇ m.
  • the second photoresists 12 were then removed by acetone. As a result buried ridge laser structures, one of which is shown in Fig. 2, were formed.
  • a contact layer 18 was provided on the second cladding layer 7 before the photo resists 8 were provided on the second cladding layer 7.
  • the contact layer 18 was formed of an inner 0.1 ⁇ m thick layer 19 of ZnSe in contact with the second cladding layer 7, an outer layer 20 of Zn Te of a thickness of about 500A and an intermediate layer 21 of a thickness of about 350A of ZnSeTe contacting the inner and outer layers in the intermediate layer 21 the ratio of Se to increases in the direction of the second cladding layer 7.
  • the photoresists 8 and subsequently the photoresists 12 were provided on the outer layer 20 and etching was carried out in the manner as described employing the same isotropic etch to form mesas in the manner as described. Buried ridge laser structures were then formed in the manner described also employing a burying layer of A1 0 3
  • An electrode layer 22 of gold of a thickness of 500A was deposited on the mesas and an electrode layer 23 of Au/Pd of
  • 1,000A thickness was deposited on the surface of the substrate.
  • the series of laser diodes thus formed were then separated from each other by standard methods such as cleaving.
  • the above-described method of forming laser diodes may be modified by forming the electrode layer 22 of gold of a thickness of 500 A on the surface of the outer layer 20 of ZnTe prior to the first etching step, providing the photoresists 8 on the electrode layer 22, each photoresist separated from each other by 200 to 400 ⁇ m, ion etching to remove the exposed portions of the electrode layer 22 and the contact layer 18 and then etching with an aqueous solution of HX to remove exposed portions of the second cladding layer 7 in the manner described in page 6-page 9, line 1 of the specification of the above-noted Application Serial No. 08/726,731 Photoresists are then provided on the centers of the remaining surfaces of the second cladding layer 7. Isotropic etching of the exposed areas of the second cladding layer 7 and underlying areas of the second guiding layer 6, the active layer 5 and the first guiding layer 3 is then carried out and a burying layer 16 provided all in the manner previously described.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Geometry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Une diode-laser à moulures enfouies présente une structure mesa, certaines parties de la couche active s'étendant latéralement depuis les parois latérales de la structure mesa et des parties du substrat s'étendant latéralement depuis les bords de la couche active. Les parois latérales de la structure mesa et les parties s'étendant de la couche active et du substrat, sont recouvertes d'une couche de matériau isolant.
PCT/IB1999/000095 1998-01-28 1999-01-25 Lasers ii-iv possedant des structures a guidage par l'indice Ceased WO1999039413A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1471598A 1998-01-28 1998-01-28
US09/014,715 1998-01-28

Publications (2)

Publication Number Publication Date
WO1999039413A2 true WO1999039413A2 (fr) 1999-08-05
WO1999039413A3 WO1999039413A3 (fr) 1999-09-16

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PCT/IB1999/000095 Ceased WO1999039413A2 (fr) 1998-01-28 1999-01-25 Lasers ii-iv possedant des structures a guidage par l'indice

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003077390A1 (fr) * 2002-03-13 2003-09-18 Optillion Ab Procede de fabrication de dispositif photonique, et dispositif photonique
WO2003077388A1 (fr) * 2002-03-13 2003-09-18 Optillion Ab Procede de fabrication d'un dispositif photonique et dispositif photonique
WO2021251524A1 (fr) * 2020-06-11 2021-12-16 엘지전자 주식회사 Dispositif électroluminescent à semi-conducteurs et dispositif d'affichage correspondant

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148267A (en) * 1989-09-08 1992-09-15 Hewlett-Packard Company Double heterostructure step recovery diode with internal drift field
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
EP0637862A3 (fr) * 1993-08-05 1995-05-24 Hitachi Ltd Dispositif laser à semi-conducteur et méthode de fabrication.
JP2692563B2 (ja) * 1993-12-28 1997-12-17 日本電気株式会社 半導体レーザ埋め込み構造
US5619520A (en) * 1994-09-09 1997-04-08 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
US5834330A (en) * 1996-10-07 1998-11-10 Minnesota Mining And Manufacturing Company Selective etch method for II-VI semiconductors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003077390A1 (fr) * 2002-03-13 2003-09-18 Optillion Ab Procede de fabrication de dispositif photonique, et dispositif photonique
WO2003077388A1 (fr) * 2002-03-13 2003-09-18 Optillion Ab Procede de fabrication d'un dispositif photonique et dispositif photonique
US7273565B2 (en) 2002-03-13 2007-09-25 Finisar Corporation Method for manufacturing a photonic device and a photonic device
US7279109B2 (en) 2002-03-13 2007-10-09 Finisar Corporation Method for manufacturing a photonic device and a photonic device
WO2021251524A1 (fr) * 2020-06-11 2021-12-16 엘지전자 주식회사 Dispositif électroluminescent à semi-conducteurs et dispositif d'affichage correspondant

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