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WO1999016112A1 - Aligner, scanning aligner and scanning exposure method - Google Patents

Aligner, scanning aligner and scanning exposure method Download PDF

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Publication number
WO1999016112A1
WO1999016112A1 PCT/JP1997/003317 JP9703317W WO9916112A1 WO 1999016112 A1 WO1999016112 A1 WO 1999016112A1 JP 9703317 W JP9703317 W JP 9703317W WO 9916112 A1 WO9916112 A1 WO 9916112A1
Authority
WO
WIPO (PCT)
Prior art keywords
stage
mask
substrate
optical system
projection optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1997/003317
Other languages
French (fr)
Japanese (ja)
Inventor
Akimitsu Ebihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to AU43193/97A priority Critical patent/AU4319397A/en
Priority to PCT/JP1997/003317 priority patent/WO1999016112A1/en
Priority to JP2000513312A priority patent/JP3358108B2/en
Publication of WO1999016112A1 publication Critical patent/WO1999016112A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages

Definitions

  • the present invention relates to an exposure apparatus and an exposure method, and more particularly, to a method in which a mask held on a mask stage and a photosensitive substrate held on a substrate stage are scanned synchronously using illumination light to form a mask.
  • the present invention relates to an exposure apparatus for transferring a pattern such as a formed semiconductor circuit pattern or a liquid crystal circuit pattern onto a photosensitive substrate via a projection optical system, and particularly to a scanning exposure apparatus and a scanning exposure method.
  • S & S type a scanning type exposure apparatus of the scan type
  • S & S type a scanning type exposure apparatus of the scan type
  • SPIE Vol 1088 Optical / Laser Microelectronics 11 (1989) No. 42. Pages 4 to 43, 3 Japanese Patent Application Laid-Open No. 2-229394, 4 Japanese Patent Application Laid-Open No. 4-27776 ⁇ ⁇ and the like.
  • the mask is moved one-dimensionally in the scanning direction at the time of scanning exposure in order to use the 1 ⁇ mirror projection in the S & S method, and the semiconductor wafer is scanned in the scanning direction. It is disclosed to be configured to perform a step movement in a direction orthogonal to the step movement. Also, on According to the document described above, a mask (or reticle), a wafer and a mask are used during scanning exposure using a 1/4 reduction projection optical system having an arc-shaped slit view combined with an optical lens and a reflecting mirror. An S & S type reduction projection scanning type exposure apparatus in which the speed ratio of the light beam is precisely controlled to 4: 1 is disclosed.
  • Consists of a plurality of optical lenses, a beam splitter, and a concave mirror Consists of a plurality of optical lenses, a beam splitter, and a concave mirror.
  • a reduction projection optical system applied to an ArF excimer laser having a wavelength of 200 nm or less as exposure illumination light has been disclosed. I have.
  • a similar projection optical system is also disclosed in Japanese Patent Application Laid-Open No. 5-88087 filed by the same applicant as the present application.
  • a reticle stage for holding a reticle and a wafer stage for holding a wafer are moved at a speed corresponding to the reciprocal of the reduction magnification of the projection optical system. It is configured to scan by the ratio.
  • a drive source for the reticle stage for example, a linear motor
  • a drive source for the wafer stage for example, a linear camera
  • the apparatus body column for fixing the projection optical system, etc.
  • the reticle stage (mask stage) and the wafer stage (substrate stage) have different dynamic characteristics.
  • the method of scanning after the inferior stage is generally adopted.However, the stage with inferior characteristics has slow settling due to the influence of the body sway which is the frame of the device, and the synchronization performance is poor.
  • a special device is indispensable for this purpose, and the configuration of the device is complicated and the cost is increased.
  • a reticle is generally used.
  • the reticle stage is located above the body of the exposure apparatus, because both the stage and the wafer stage are arranged to move in the horizontal direction and are separated by about 80 to 15 Ocm in the vertical direction.
  • the entire apparatus is tilted due to scanning movement during scanning exposure of the reticle stage, or excessive stress is applied to each structure (column, platen, etc.) that constitutes the apparatus body. There were also inconveniences of doing so.
  • the present invention has been made in view of the inconveniences of the related art, and has as its object the purpose of reducing the stress generated in a structure constituting an apparatus with a simple configuration, and reducing the inclination and deviation of the entire apparatus.
  • An object of the present invention is to provide an exposure apparatus and a scanning exposure apparatus capable of suppressing the mask stage and improving the synchronization performance between the mask stage and the substrate stage.
  • Another object of the present invention is to provide a scanning exposure method capable of reducing stress generated in an exposure apparatus, suppressing tilt and swing of the entire apparatus, and improving synchronization performance between a mask and a substrate. is there. Disclosure of the invention
  • an exposure apparatus for transferring a pattern formed on the mask to the photosensitive substrate via a projection optical system while synchronously moving the mask and the photosensitive substrate.
  • An exposure apparatus is provided between the two stages, and has a first linear motor that drives the substrate stage and the mask stage so as to move the mask and the substrate in directions opposite to each other.
  • the two stages are not in contact with each other in the direction opposite to each other along the moving direction by the first linear motion.
  • the movement of both stages at this time does not exert any force on the base member or the like, and the momentum is preserved.
  • the mass of the mask stage is set to be the magnification of the projection optical system times the mass of the substrate stage, the velocity ratio between the mask stage and the substrate stage is determined by the law of conservation of momentum. As the reciprocal of the reduction ratio, both stages are accurately synchronized.
  • the projection optical system may be an optical system that projects an inverted image of the pattern formed on the photosensitive substrate on the photosensitive substrate.
  • the photosensitive substrate is horizontally held on a substrate stage
  • the mask is vertically held on the mask stage
  • the projection optical system includes a plurality of transmission optical elements
  • the optical system may include a splitter and a reflection optical element, and project the pattern of the mask disposed on the object plane onto the photosensitive substrate disposed on the image plane at a predetermined reduction magnification.
  • a second linear motor for driving the mask stage may be provided between the base member and the mask stage.
  • the first linear motor is set to 0FF.
  • a third linear motor that drives the substrate stage may be provided between the base member and the substrate stage.
  • a regenerative braking control circuit that finely adjusts a speed ratio during synchronous movement of the two stages by the first linear motor includes a small number of the second linear motor and the third linear motor. At least one can be attached to one.
  • the regenerative braking control circuit allows the second By causing at least one of the linear motor and the third linear motor to perform a regenerative braking action, at least one of the mask stage and the substrate stage that are moved in opposite directions by the first linear motor. It is possible to increase the apparent mass of one of them, and to fine-tune the speed ratio when moving both stages.
  • the regenerative braking means that the motor functions as a kind of generator to generate a braking action, thereby increasing the load driven by the first linear motor ( That is, the apparent mass of at least one of the mask stage and the substrate stage can be increased.
  • the substrate stage may include a first stage driven in a first direction in which the photosensitive substrate is synchronously moved, and the first stage holding the photosensitive substrate and being integrated with the first stage.
  • a scanning optical system including a projection optical system having an optical axis substantially orthogonal to a mask and a substrate, and transferring a pattern of the mask to the substrate via the projection optical system.
  • a drive system connected to the first stage and the second stage for synchronously moving the mask and the substrate at a speed ratio according to a magnification of the projection optical system
  • the drive exposure system drives the first stage and the second stage in opposite directions along a predetermined direction so as to substantially cancel a reaction force generated by the synchronous movement. Is done.
  • a third aspect of the present invention in a scanning exposure method for transferring a pattern of a mask to a substrate via a projection optical system,
  • the mask and the substrate are arranged on the same plane perpendicular to the optical axis of the projection optical system,
  • FIG. 1 is a diagram showing a basic configuration of the present invention.
  • FIG. 2 is a schematic configuration diagram showing the exposure apparatus of the first embodiment.
  • FIG. 3 is a schematic plan view of the apparatus of FIG.
  • FIG. 4 is a block diagram showing the configuration of the control system of the apparatus shown in FIG.
  • FIG. 5 is a block diagram showing a configuration of a control system of the device of the second embodiment.
  • FIG. 6A is a schematic front view of a modified example of the exposure apparatus according to the present invention.
  • FIG. 6B is a right side view of a modified example of the exposure apparatus shown in FIG. 6A.
  • FIG. 1 shows a basic configuration of an exposure apparatus 10 according to the present invention.
  • the exposure apparatus 10 includes a vibration isolation table 12 as a base member, and a substrate stage 1 floatingly supported on the vibration isolation table 12 via an air-bearing (air bearing) 13. 4 and a mask stage 16 which is floated and supported on the substrate stage 14.
  • a linear motor 18 is provided between the substrate stage 14 and the mask stage 16. That is, for example, the drive coil 18 A of the linear motor 18 is provided on the mask stage 16 side having the mass M r, and the magnet of the linear motor 18 is provided on the substrate stage 14 side having the mass M w.
  • a rack section 18B is provided.
  • the ratio of the mass Mr of the mask stage 16 to the mass Mw of the substrate stage 14 is twice the reduction magnification of the projection optical system (not shown).
  • the exposure apparatus 10 of the present invention configured as described above, since both stages 14 and 16 are supported by floating, only the internal force is generated when the linear motor 18 is excited.
  • Vr / Vw Mw / Mr
  • the mass ratio Mr / Mw of the two stages 16 and 14 is set to be equal to the aforementioned ⁇ reduction magnification Mpi of the projection optical system (not shown).
  • the speed ratio between the two stages 16 and 14 matches the reciprocal of the reduction ratio of the projection optical system. Therefore, ideally, when a system in which the momentum is stored is configured, if the speed (and position) of only one of the substrate stage 14 and the mask stage 16 is servo-controlled, Synchronous scanning (movement) of both stages 14 and 16 is always possible. For example, if the mask stage 16 is subjected to a servo, even if the mask stage 16 moves in an oscillating manner, the substrate stage 14 has the same speed ratio as the reciprocal of the mass ratio. Makes an oscillating movement similar to 6. In addition, since the momentum is preserved, the position of the center of gravity of the system is always constant, so that the vibration isolator 12 does not swing. Therefore, the synchronization error at the time of scanning of both stages 16 and 14 (the mask and the substrate held at both stages 16 and 14) is always zero.
  • FIGS. 2 to 3 show the configuration of the main part of an exposure apparatus 100 of the step 1 and scan type according to the first embodiment.
  • the exposure apparatus 100 includes a base structure 200 as a base member horizontally held on a vibration isolating pad (not shown), and a floating support on the base structure 200. And a reticle stage body 206 as a mask stage, and a base structure 200 held by a main body column (not shown) above the wafer stage 14. It includes a fixed projection optical type PL and an illumination optical system 2 12 similarly held by a main body column (not shown) and fixed to a base structure 200.
  • the wafer stage 14 has a first wafer stage body 208 as a first stage movable in the X direction (scanning direction) and a first wafer stage body 208.
  • a second wafer stage body 220 is provided as a second stage that is guided and movable in the Y direction orthogonal to the X direction. This specific configuration will be described later in detail.
  • On the top surface of the base structure 200 two prisms extending parallel to each other in the X direction (the direction perpendicular to the paper) perpendicular to the Y direction on the one end (left end) side in the Y direction in FIG.
  • Fixed guide rails 202, 204 are protruded, and the other top surface of the base structure 200 supports each moving body (stages) in the Z direction and is smooth in the XY plane. Flat polished to move to On one fixed guide rail 202, a guide surface 202 that defines the reticle stage body 206 movable in the X direction in the Z direction and a guide surface 202 that defines the reticle stage body 206 in the Y direction are provided. B is formed, and the other fixed guide rail 204 has a guide surface 204 A that defines the first wafer stage body 208 movable in the X direction in the Y direction. .
  • As the reticle stage body 206 as shown in FIG.
  • the reticle fine stage 2 holds the reticle R vertically and performs fine translation and rotation in a plane perpendicular to the optical axis AX of the projection optical system PL (XZ plane in the figure). 10 is provided.
  • the illumination optical system 211 is disposed on the side opposite to the projection optical system PL with respect to the reticle R, and slits the rectangular pattern area of the reticle R in a direction orthogonal to the scanning direction (X direction) during scanning exposure. Irradiation is performed with illumination light having an intensity distribution extending in a rectangular shape (or rectangular shape).
  • the pattern portion of the reticle R illuminated by the linear slit illumination light is located at the center of the circular visual field on the object plane perpendicular to the horizontal optical axis AX of the projection optical system PL, and the transmission optical element
  • the first lens group G 1, the second lens group G 2, the third lens group G 3, the beam splitter BS as a light splitter, and the reflecting optical element For example, with a resolution of 0.35 m or less, through a projection optical system PL of a predetermined reduction magnification M pi (1/4 in this embodiment) constituted by a concave mirror MR into bilateral telecentric lenses at a predetermined reduction magnification M pi (in this embodiment, 1/4). Projected onto wafer W.
  • the projection optical system one that projects an inverted image (inverted on the X axis) of a circuit pattern (not shown) formed on the pattern surface of the reticle R onto the wafer W is used.
  • the detailed configuration of such a projection optical system PL is disclosed in detail in the above-mentioned Japanese Patent Application Laid-Open No. 5-88087, which is disclosed in Japanese Patent Application Laid-Open No. 6-30973. Therefore, further explanation is omitted here.
  • an air bearing (air bearing) supporting the own weight of the reticle stage body 206 facing the guide surface 202A of the fixed guide rail 202 is provided on the bottom of the reticle stage body 206.
  • Pad PDA for air bearing and pad PDB for air bearing that constrains Y-direction displacement of reticle stage body 206 facing guide surface 202 B of fixed guide rail 202
  • the pad PDB for constraining displacement in the Y direction is composed of a plurality of air pads that emit pressurized air and is alternately arranged in the X direction (a direction perpendicular to the paper) to suck air. It consists of a pneumatic / vacuum combination pad (vacuum preload type air bearing) that combines multiple vacuum pads.
  • the reticle stage body is formed by the balance between the suction force (preload) of the vacuum pad section and the pressure of the air ejected from the air pad section. 206 is levitated and supported with a predetermined clearance from the guide surface.
  • the weight of the reticle stage body 206 is Acts as a preload, and the reticle stage body 206 is moved from the guide surface by the balance between the dead weight and the pressure of the air ejected from the head PDA.
  • the pad is used to mean that the pad supports its own weight
  • the base structure of the fixed guide rail 204 at the other end in the Y direction is used.
  • the first wafer stage body 208 and the second wafer stage The wafer stage 14 composed of a solid body 220 and a floating body is formed on the base structure 200.
  • the first wafer stage body 208 is formed on a rectangular frame extending on the XY plane on the base structure 200. (See Fig. 3.)
  • pads PDD and PDE for air bearings arranged at the four corners facing the upper surface of the base structure 200.
  • the displacement of the first wafer stage body 208 in the Y direction is caused by the first wafer stage body 2 facing the vertical guide surface 204 A of the fixed guide rail 204. Fixed to 0 8 Pneumatic / vacuum combination type pad restrained by PDF.
  • the first wafer stage body 208 can be moved in a frictionless manner in the X direction by being guided by the guide surface 204 A and the surface of the base structure 200.
  • a first linear motor 211 disposed along the X direction is provided between the first wafer stage body 208 and the reticle stage body 206.
  • the first linear motor 21 6 is fixed to the first wafer stage body 208 side, and extends over a moving stroke in the X direction.
  • the magnet track portion 21A includes a yoke extending in the X-axis direction and having a U-shaped cross section and a pair of magnets fixed to the upper and lower surfaces of the yoke) and a reticle stage body 20. It consists of a drive coil section 2 16 B fixed to the 6 side, and generates thrust in the X direction. That is, in the first embodiment, by driving the linear motor 2 16, for example, the reticle stage section 206 is integrally driven with the drive coil section 2 16 B toward the front of the drawing. As a result, the reaction causes the wafer stage 14 to be driven integrally with the magnet track unit 2 16 A toward the back side of the drawing (the reticle stage body 20).
  • the second linear motor 214 is used for returning the reticle stage body 206 to a predetermined reset position, and has various functions. This will be described later.
  • FIG. 3 shows the configuration of the wafer stage body viewed on the XY plane.
  • a plurality of air bearings for supporting its own weight are provided below the second wafer stage body 220 so as to face the upper surface of the base structure 200 as shown in FIG. Pads PDI and PDG are installed.
  • FIG. 2 the inner surface of one of the two linear frame portions of the first wafer stage body 208 extending in the Y direction with the second wafer stage body 220 interposed therebetween is also shown in FIG.
  • a guide surface 222 is formed with the second wafer stage body 220 for guiding in the Y direction (constraining the displacement in the X direction), and one of the second wafer stage bodies 220 is formed.
  • a pair of pneumatic / vacuum combination pads PDH facing the guide surfaces 222 are fixed to the ends. Further, between each of the two linear frame portions of the first wafer stage body 208 extending in the Y direction and the second wafer stage body 220, as shown in FIG.
  • a pair of linear motors 240 and 242 are provided to move the wafer stage body 220 in the Y direction with respect to the first wafer stage body 208.
  • the drive coil portions 240 A and 242 A of the pair of linear motors 240 and 242 are fixed to both sides of the second wafer stage body 220, respectively.
  • the second wafer stage body 220 can be minutely rotated (on the order of seconds) on the surface of the base structure body 200.
  • FIG. 3 the reciprocal configuration of the reticle R and the first and second wafer stage bodies 208 and 220 on the XY plane will be further described. In FIG.
  • the movement position of reticle R in the X direction (scanning direction) in the XZ plane and the minute rotation amount (retinal error) of reticle R in the XZ plane are represented by reticle stage 2
  • the laser interferometers RIFX and RIF0 project a laser beam for length measurement onto a reflecting mirror CMX fixed to a part of the fine movement stage 210 provided at 06, and receive the reflected beam. You. Although not shown in either of FIGS. 2 and 3, the position of the reticle fine movement stage 210 in the Z direction (the vertical direction in the plane of FIG. 2 and the direction perpendicular to the plane of FIG. 3 in FIG. 3) is sequentially measured.
  • a laser interferometer RIF y is also provided.
  • this laser interferometer RIF y measures the Z-direction position of the reticle fine movement stage 210, but in the wafer stage coordinate system. Since this Z-direction position corresponds to the Y-direction position, The laser interferometer RIF y is used. Therefore, in the following description, the measurement value of the laser interferometer RIF y is expressed as PY.
  • the coordinate position of the wafer W in the XY plane is determined by a movable mirror My extending in the X-axis direction at the other end (right end) in the Y-direction on the second wafer stage body 220 for measuring the length.
  • a laser interferometer WIF y that projects a laser beam and receives the reflected beam, and a Y-axis direction at one end in the X direction on the second wafer stage body 220
  • the laser interferometer WIFX which projects a laser beam for length measurement onto the moving mirror M x extending in the direction and receives the reflected beam, is sequentially measured.
  • Each of the interferometers WIFX and WIFy simultaneously measures the minute rotation amount (jewing error) of the second wafer stage body 220 at the same time.
  • the illustration of both the moving mirror and the interferometer is omitted in FIG.
  • Each of the above interferometers RIF x, RIF ⁇ RIF y, WIF x, WIF y is a reference for measuring the coordinate position of reticle R or wafer W with reference to base structure 200.
  • the plane mirror and the corner prism (both not shown) are fixed to the base structure 200.
  • one shot area SA is shown in the wafer W in FIG. 3, but in the state of FIG. 3, the center point of the shot area SA is a vertical optical axis AX ( The moment coincides exactly with the optical axis of the lens group G3 in Fig. 2; at this time, the center point of the pattern area of the reticle R also has a horizontal optical axis AX (the lens groups G1 and G2 in Fig. 2).
  • the wafer W or the reference mark plate FM TTL (through-the-lens) type alignment optical system 230 that photoelectrically detects the alignment mark formed on the top, beam splitter BS, and third lens group Alignment mark on wafer W or fiducial mark plate FM is detected via G3, and reticle R is detected via beam splitter BS and second and first lens groups G2 and G1.
  • a half TTL type alignment optical system 232 for detecting the above alignment mark is provided.
  • the ratio of the mass of both the second wafer stage body 220 to the total value Mw is set to be equal to the reduction magnification Mpi of the projection optical system PL.
  • the mass ratio Mr / Mw is also set to 1/4.
  • FIG. 4 shows a configuration of a control system of the exposure apparatus 100 according to the first embodiment. , Alignment control system 255, stage main control system 260, drive circuit 253, drive system 254, main scan drive system 255, drive circuit 256, etc.
  • the detection information from 2 is input to the alignment control system 259, where the wafer W, reticle R, and Reference mark board The coordinate position and displacement error of the alignment mark on the FM are determined.
  • the stage main control system 260 is a mini-operation (not shown) for operation. Interface, and the above-mentioned linear motors 2 1 4 and 2 16, 24, 24, 24, 24, drive system 25 4 for driving and controlling reticle fine movement stage 210, main scanning drive system 25 5, drive circuit 25 6, drive circuit 25 3 Is done.
  • the drive circuit 253 is composed of position information PX, PY, P P in the X direction, Y direction, and rotation (jowing) direction measured by the reticle-side interferometers RIFX, RIF ⁇ RIF y.
  • the reticle fine movement stage 210 is servo-controlled based on the command information from the main control system 260, and the reticle R is minutely moved during alignment or during scanning exposure.
  • the drive system 255 is based on the position information PX (and the speed information Vx) measured by the reticle-side interferometer RIFX and the command information from the main control system 260, and the second linear motor Servo control of 2 1 4 drive.
  • the main scanning drive circuit 255 operates mainly during scanning exposure, and is measured by the speed information VX (or position information PX) measured by the reticle side interferometer RIFX and the wafer side interferometer WIFX. While monitoring one or both of the speed information VX (or the position information PX), at least one of the absolute speeds of the reticle stage body 206 and the first wafer stage body 208 is monitored.
  • the first linear motor 216 is servo-controlled so that it becomes equal to the speed command information from the main control system 260.
  • the drive circuit 256 is based on the position information PX, PY, PS measured by the wafer-side interferometers WIFX, WIFy and the command information from the main control system 260, and the pair of linear motors described above.
  • Servo control of the drive of 240 and 242 is performed.
  • the operation at the time of scanning exposure of the exposure apparatus 100 of the first embodiment configured as described above will be described.
  • the reticle alignment by the half TTL alignment detection system 232 and the global alignment of the reticle R and wafer W by the TTL alignment detection system 230 and the reference plate FM are determined. Advance preparations such as baseline measurement used shall be completed.
  • the stage main control system 260 one end in the X-axis direction of a predetermined shot area on the wafer W should be positioned in the exposure field of the projection optical system PL.
  • a command is given to the scanning drive system 254 and the drive circuit 256 to drive the linear motor 216 and the linear motors 240, 242.
  • the second wafer stage body 220 is moved X with the first wafer stage body 208 in the direction opposite to the reticle stage body 206 and the first wafer stage body 2 It is driven in the Y direction with respect to 08, and one end in the X axis direction of the shot area is positioned in the exposure field of the projection optical system PL.
  • the stage main control system 260 drives the second linear motor 214 via the drive system 254 to return the reticle stage body 206 to a predetermined reset position.
  • the other end of the reticle in the X-axis direction matches the exposure field of the projection optical system PL.
  • the second linear motor 214 was servo-controlled based on the measurement value of the reticle interferometer 250 so that the position of the reticle stage body 206 did not change in the X direction. In this state, the first linear motor 2 16 is driven to
  • the stage main control system 260 gives a command to the main scanning drive system 255 to drive the linear motor 216 to start exposure of the shot area.
  • the wafer stage 14 and the reticle stage body 206 are both supported on the base structure 200 via air bearings (vacuum bearings).
  • the first wafer stage body 208 and the second wafer stage body 220 are integrated according to the law of conservation of momentum.
  • the top surface of the base structure 200 is moved at a speed Vw in the + X direction, for example, and the reticle stage body 206 is moved along the top surface of the base structure 200 in a speed V in the X direction.
  • Move with r the ratio of the total mass M r of both the reticle stage body 206 and the reticle fine movement stage 210 to the total mass M w of the wafer stage 14 is determined by the projection optical system.
  • the reticle stage body 206 and the wafer stage are set according to the law of conservation of momentum, regardless of whether the vehicle is accelerating, at a constant speed, or decelerating, because it is set to be equal to 1/4 of the PL reduction magnification.
  • the speed ratio to 14 is 4: 1, which is equal to the reciprocal of the reduction factor M pi. Therefore, if only the speed (or position) of one of the wafer stage 14 and the reticle stage body 206 is servo-controlled, the two can always be reliably and synchronously scanned.
  • the absolute values of the respective scanning speeds Vw and Vr determine the amount of exposure given on the wafer W during scanning exposure.
  • the interferometer RIFX for measuring the reticle stage body 206 in the X direction or the X direction position meter of the first wafer stage body 208 While monitoring the speed information output from one of the measurement interferometers WIFx, the servo of the drive of the first linear motor 2 16 is controlled so that the speed becomes a specified constant value. Is required. For example, if the reticle stage body 206 is subjected to servo, even if the reticle stage body 206 vibrates, the wafer stage 14 has the same speed ratio as the reciprocal of the mass ratio. The reticle stage body 206 performs a vibrating movement similar to that of the reticle stage body 206 while maintaining the state.
  • the stage main control system 260 drives the linear motors 240, 242 via the drive circuit 256. Then, a shot area adjacent to the exposed shot on the wafer W is positioned in the exposure field of the projection optical system PL (stepping is performed). After this positioning, the stage main control system 260 drives the linear motor 216 via the main scanning drive system 255 to move the reticle stage body 206 in the opposite direction (+ X direction) from the front. Scanning starts exposure of the shot.
  • the wafer stage 14 is scanned in the X direction at a speed of 1/4 of the reticle stage body 206. Thereafter, similarly, the exposure of the shot area on the wafer is performed by the step-and-scan method.
  • the mass ratio M r / M w between the reticle-side stage body and the wafer-side stage body is reduced by the reduction of the projection optical system PL.
  • the reticle structure 206 and the wafer stage 12 can be always scanned with a synchronization error of zero based on the law of conservation of momentum with a simple configuration. Also, since the reticle stage body 206 and the wafer stage 14 (wafer stage bodies 208, 220) move in opposite directions according to the law of conservation of momentum, the entire apparatus body including the base structure 200 is moved. The position of the center of gravity with respect to the X direction hardly changes, and the effect of reducing the shaking of the device can be obtained.
  • the reticle stage 206 and the substrate stage (wafer stage 208, 220) extend in the scanning direction (X direction) as described above.
  • a linear motor 2 16 is arranged, and the wafer stage 14 is supported by air bearing so as to move one-dimensionally in the X direction in a non-contact state on the base structure 200, and a reticle stage.
  • the body 206 is supported by air bearing so as to move one-dimensionally in the X direction on the base structure 200 in a non-contact state. Therefore, while the drive current is being supplied to the drive coil section 21 B of the linear camera, the relative positional relationship between the reticle R and the wafer W in the X direction is controlled according to the law of conservation of momentum.
  • the relative displacement of the reticle stage body 206 and the wafer stage 14 in the X direction is devised by devising the coil arrangement of the linear motor 216, the winding structure of each coil, and the control of the drive current supply. It is also possible to use a linear motor that can perform servo control so as to maintain zero. In this case, the relative positional relationship between the reticle R and the wafer W in the X direction can be easily stopped simply by controlling the supply current to the linear motor 216. However, even in such a case, there is a possibility that the reticle stage body 206 and the wafer stage 14 are integrally moved on the base structure 200 in the X direction due to various vibrations, inclination of the exposure apparatus, and the like.
  • Step and scan exposure means that the relative positional relationship in the X direction between the optical axis (or illuminating light flux) of the illumination system 211 and the reticle R to be set at the start of scanning exposure changes. This will have a significant effect on the sequence.
  • the second linear motor 214 functions to solve such inconvenience. That is, in the exposure apparatus 100 of the first embodiment, the relative positions of the reticle stage body 206 and the wafer stage 14 (wafer stage bodies 208, 220) are controlled at a speed ratio according to the law of conservation of momentum.
  • a reticle stage body for the base structure 200 Since a second linear camera 2 14 for controlling the absolute position of 206 is provided, the reticle stage 206 and wear stage 14 (wafer stage 2) are used in accordance with the law of conservation of momentum during scanning exposure. 0 8 and 2 20) in the opposite direction, the power supply terminal of the drive coil section 2 14 B of the second linear motor 2 14 is opened to make it no load, while the reticle stage When controlling the absolute position of the body 206, the second position is controlled based on the position information and speed information from the interferometer RIFX for measuring the X direction position of the reticle stage body 206 with respect to the base structure 200.
  • the position of the reticle R with respect to the illuminating light beam can always be managed accurately by controlling each linear motor in cooperation with the S & S type wafer exposure sequence. Furthermore, since the positional relationship between the reticle R and the wafer W with respect to the base structure 200 after the completion of the exposure processing can be kept from the positional relationship at the start of the exposure processing, the reticle exchange and the wafer exchange can be performed. In this case, there is also an advantage that a transfer position between the arm and the like of the automatic transport mechanism is prevented from being shifted.
  • the projection optical system In the first embodiment, an example in which an inverted optical system that projects an inverted image of the pattern of the reticle R onto the wafer W is used as the projection optical system, but a vertically symmetric circuit pattern is exposed.
  • an erecting optical system that forms an erect image of the circuit pattern on the photosensitive substrate can be used as the projection optical system.
  • the reduction magnification of the projection optical system is 1/4.
  • the reduction ratio of the projection optical system may be any number. For example, even if the reduction ratio is 1 (1 ⁇ ), the advantages of the present invention are large. .
  • the position of the center of gravity of the system does not move due to the movement of the stage, and the body does not shake due to the reaction force due to the movement of the stage.
  • An expensive vibration isolator such as a vibration isolator is not required, and even if one stage vibrates, the other stage performs the same vibratory motion accordingly, resulting in a synchronization error. This is because no problem occurs.
  • the second embodiment consumes a current from the power generation coil 2557 and the coil 2557 in functional relation with the linear motor 214. It is characterized in that a regenerative braking load circuit 258 is provided. Other configurations of the control system and other device configurations are the same as those of the first embodiment.
  • the reticle stage 206 and the wafer stage 14 (wafer stage bodies 208, 220) at the time of scanning exposure are utilized by using the second linear motor 214.
  • the regenerative control circuit that finely adjusts the speed ratio within a range of, for example, about ⁇ 0.1% with a resolution of the order P-P.m, specifically, the power generation coil 2557 shown in Fig. 5 With a load circuit 258, the transfer magnification in the scanning direction is slightly changed. (When the design dimension in the scanning direction on the wafer W is 35 mm, the entire circuit expands and contracts by several hundred nm.) )
  • the power generation coil 257 may be provided with a special power generation coil in the second linear motor 221 or the driving coil may be used for power generation.
  • the load circuit 258 (appropriate load) is connected to the terminal of the power generation coil. (Including a resistor) to perform regenerative control to increase the dynamic load in the X direction of reticle stage body 206.
  • the speed ratio between reticle stage body 206 and wafer stage 14 is slightly changed. Let it.
  • the load circuit 258 is configured so that the current from the power generating coil 257 flows through the load resistor via a high-speed switching element or the like.
  • the on / off frequency of the element and the duty ratio of the on-time and the expiration time can be varied over a wide range.
  • the power generation unit integrated with the drive coil unit 2 14 B of the second linear motor 2 14 The control is performed so that a dynamic load is applied to the moving direction of the reticle stage body 206 using the coil 257 (see Fig. 5) and the load circuit 258.
  • the load circuit 258 acts as a variable load resistor for the power generation coil 257, and the current extracted from the power generation coil 257 is controlled by the main scanning drive circuit 255. It has the function of changing almost continuously according to the command. During scanning exposure, the reticle stage body 206 tries to move at the speed Vr, but an appropriate load is applied to the terminal of the power generation coil 255.
  • the momentum corresponding to the energy consumed by the load resistor will be added to the reticle stage 206.
  • the mass ratio M r / M w increases, and the speed ratio V w / V r becomes M pK ( V w / V r)
  • the weight of each stage is set so that the mass ratio M r / M w in the stationary state is slightly smaller than the reduction ratio M ⁇
  • the speed ratio and the reduction ratio may be made to match by always adjusting the regenerative damping amount appropriately during scanning exposure.
  • the driving coil section 2 14 of the second linear motor 2 14 When the power is supplied to ⁇ and used to drive the reticle stage body 206, the apparent dynamic mass of the reticle stage body 206 can be slightly reduced, so that the speed ratio V w / V “ It is also possible to adjust in the direction of M pl> (V w / V r) According to the second embodiment described above, the scanning speed ratio between the reticle R and the wafer W during scanning exposure is regenerated. Fine adjustment can be made very easily by controlling the braking amount (current value from the power generation coil).
  • the speed ratio between the reticle R and the wafer is detected from the measurement result of the interferometer, and the detected value is set in advance.
  • the regenerative braking amount so that By controlling this, not only can the transfer magnification in the scanning direction be finely adjusted uniformly, but also the speed ratio between the scanning start and end portions of the shot area on the wafer W and the center of the shot area can be adjusted.
  • the transfer distortion (distortion) is adjusted by subtly changing the speed ratio. Can also be adjusted.
  • the linear motor 2 14 is provided to move the reticle stage body 206 independently in the scanning direction on the base structure 200.
  • the X and Y positions of the first and second wafer stage bodies 208 and 220 can be reliably stopped, or the first and second wafer stage bodies 208 and 22 can be stopped.
  • a third thrust force in the X direction is generated between the base structure body 200 and the first wafer stage body 208.
  • a linear motor may be provided. The third linear motor may be subjected to servo control based on the measurement value of the wafer interferometer 25 2 (WIFX).
  • the wafer stage 14 may be moved in the opposite direction in accordance with the law of conservation of momentum accompanying the movement of the reticle stage body, or the third linear motor may be forcibly stopped at a predetermined position by servo-controlling the third linear motor. You may leave.
  • Each stage body 206, 208, 220 is set so that the reticle stage body 206 and the wafer stage body 220 are set at predetermined positions with respect to the image field of the projection optical system. Moved and fixed on the wafer stage body 220 The reference mark and the alignment mark on the reticle R are mutually photoelectrically detected by the alignment detection system 232 through the projection optical system PL, and are compared with the moving coordinate system of the wafer stage body 220. The fine movement stage 210 on the reticle stage body 206 is controlled so that the reticle R is aligned in the X, Y, and 0 directions.
  • the wafer stage body 220 In order to place the wafer W on the wafer stage body 220, the wafer stage body 220 is moved to a predetermined loading position. After that, the wafer stage is arranged so that each of the alignment marks formed along with several shot areas on the wafer W are arranged one after another in the field of view of the projection optical system PL. The body 220 is moved, and each alignment mark is sequentially detected by the alignment detection system 230 via the projection optical system PL. Based on the detection result, the relative positional relationship (X, Y, 0 directions) between the arrangement coordinate system of the shot area on the wafer W and the pattern area of the reticle R is determined.
  • the third linear motor is driven to move the wafer stage 14 so that the wafer stage 14 is not displaced with respect to the base structure.
  • the first linear motor 2 16 is driven to move the reticle stage body 206 slightly in the X direction with respect to the wafer stage 14.
  • the relative positional error between the shot array coordinate system on the wafer W and the pattern area of the reticle R in the vertical direction is either the wafer stage body 220 or the fine movement stage 210 on the reticle stage body 206.
  • the relative position error in the ⁇ direction is calculated as follows: It is corrected by the minute rotation of the wafer stage body 220. It should be noted that a zero stage may be separately provided on the wafer stage body 220.
  • the reticle stage body 206 is positioned in the X direction so that the pattern area on the reticle R comes to a position where irradiation by the illumination light beam is started, and one shot area on the wafer W is placed.
  • the wafer stage 14 is positioned in the X direction so that the position of the wafer stage 14 starts exposure.
  • the first linear motor 216 is driven, and the reticle stage body 206 and the wafer stage 14 are made to correspond to the image forming magnification Mpi of the projection optical system ⁇ L according to the law of conservation of momentum. It is moved in the opposite direction at the predetermined speed ratio.
  • fine adjustment of the transfer magnification in the scanning direction requires precise measurement of the change in the speed ratio (or the change in the relative positional relationship) if it is necessary to suppress the change in the speed ratio between the two stages within the allowable range.
  • the exposure apparatus of this modification is characterized in that not only a wafer W as a photosensitive substrate but also a reticle R as a mask is horizontally held on a reticle stage 16.
  • This exposure apparatus is composed of a reticle stage 16 and a substrate stage 14 which are supported by air bearing (air bearings) 13 on a surface plate 12 and a reflection optical system for reducing and projecting a circuit pattern. And a light source 20.
  • the substrate stage 14 is a first stage 14 A which is supported by floating on the surface plate 12 and is movable in the X-axis direction, and a linear motor is mounted on the first stage 14 A.
  • a second stage 14 B driven in the Y-axis direction.
  • the wafer W is held on the second stage 14B.
  • reticle stage 16 is arranged so as to straddle first stage 14 A, and between both stages 16 and 14 A, coil 18 A and Linimo-evenings 18 and 18 consisting of magnets 18B are interposed.
  • the exposure light from the light source 20 illuminates the reticle R from below through an illumination optical system (not shown)
  • the circuit pattern in the elongated illumination area (corresponding to the exposure field of the projection optical system) is formed.
  • the present invention can be applied to an exposure apparatus that uses a vertically placed substrate stage.o
  • a driving unit that drives the second stage in the non-scanning direction As an example, a case where a linear motor is used has been described, but the present invention is not limited to this, and a configuration may be used in which the second stage is driven in the non-scanning direction using a feed screw mechanism. good.
  • the present invention with a simple configuration, the stress generated in the structure constituting the apparatus is reduced, the inclination and the sway of the entire apparatus are suppressed, and the mask stage and the substrate stage can be connected. There is an unprecedented superior effect that the synchronization performance can be improved.

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Abstract

A mask stage (16) and a wafer stage (14) are supported above a base member (12), and consequently both the stages (16 and 14) can be driven by a linear motor (13) in scanning directions opposite to each other in a non-contact manner. At that time, the movements of both the stages do not exert any force to the base member (12) and other parts and the momentum is conserved. Since the mass ratio of the stage (16) to the stage (14) is equal to the reduction ratio of a projection optical system (not shown), the speed ratio of the stage (16) to the stage (14) is equal to the reciprocal of the reduction factor of the projection optical system, in accordance with the momentum conservation law, so that synchronism between both the stages (16 and 14) is accurately controlled. The inclination and sway of the whole aligner can be suppressed and, further, the synchronous performance of the mask stage and the wafer stage can be improved.

Description

明 細 書 露光装置、 走査露光装置及び走査露光方法 技術分野  Description Exposure apparatus, scanning exposure apparatus and scanning exposure method

本発明は露光装置及び露光方法に係り、 更に詳し 〈 はマスクステージ に保持されたマスク と基板ステージに保持された感光基板とを、 照明光 を用いて、 同期して走査する ことによって、 マスクに形成された半導体 回路パターンや液晶回路パターンのようなパターンを投影光学系を介し て感光基板に転写する露光装置、 特に走査露光装置及び走査露光方法に 関する。 背景技術  The present invention relates to an exposure apparatus and an exposure method, and more particularly, to a method in which a mask held on a mask stage and a photosensitive substrate held on a substrate stage are scanned synchronously using illumination light to form a mask. The present invention relates to an exposure apparatus for transferring a pattern such as a formed semiconductor circuit pattern or a liquid crystal circuit pattern onto a photosensitive substrate via a projection optical system, and particularly to a scanning exposure apparatus and a scanning exposure method. Background art

近年、 半導体素子製造用の露光装置と して解像線幅 0. 以下を 実現するステップ . アン ド ■ スキャ ン方式 (以下、 適宜 「 S & S方式」 という ) の走査型露光装置が開発され、 半導体製造ライ ンでの本格的な 実用化に向けて積極的な改良がなされている。 そのような S & S方式の 露光装置は、 例えば、 ①特開昭 5 6 — 1 1 1 2 1 8号公報、 ② SPIE Vol 1088 Opti cal/Laser M i c r o 1 i t h o g r a p h y 11 ( 1989 )の第 4 2 4頁〜第 4 3 3頁、 ③特開平 2 — 2 2 9 4 2 3号公報、 ④特開平 4 — 2 7 7 6 1 2 ^ 公報等に開示されている。 このうち、 上記①の公報には、 等倍のミラ一プロジェク シヨ ンを S & S方式で使用するためにマスクを走査露光時の走査方向に 1 次元移動さ せ、 半導体ウェハは走査方向へスキャ ン移動させ、 かつそれと直交した 方向へステップ移動させる構成にする ことが開示されている。 また、 上 記②の文献には、 光学レ ンズと反射鏡とを組合わせた円弧状ス リ ッ 卜視 野を有する 1 / 4縮小投影光学系を使って、 走査露光時にマスク (又は レチクル) とウェハとの速度比を精密に 4 : 1 に制御 した S & S方式の 縮小投影走査型露光装置が開示されている。 また、 上記③の公報には、 照明光と してエキシマ レ一ザを用い、 通常の縮小投影レ ンズ系の円形像 視野内に内接する正六角形を実効的な投影領域に制限して S & S方式の 露光を行う装置が開示され、 上記④の公報には、 通常の縮小投影レ ンズ 系の円形像視野内の直径に沿つた直線ス リ ッ ト (長方形) 状領域を実効 的な投影領域に制限して S & S方式の露光を行う装置が開示されている < この他、 ⑤特開平 6 — 3 0 0 9 7 3号公報には、 よ り高い解像力を得 るために複数の光学レ ンズとビームスプリ ッ夕 と凹面鏡とで構成されて. 露光用照明光と して波長が 2 0 0 n m以下の A r Fエキシマ レーザに適 用 した縮小投影光学系が開示されている。 それと同様の投影光学系は、 本願と同一出願人によ り出願された特開平 5 — 8 8 0 8 7号公報にも開 示されている。 上述した各従来技術において、 縮小投影光学系を使った走査型露光装 置では、 一般にレチクルを保持する レチクルステージとウェハを保持す る ウェハステージとを投影光学系の縮小倍率の逆数に一致した速度比で 走査移動させる構成となっている。 このため、 レチクルステージ用の駆 動源 (例えばリニアモ—夕) とウェハステージ用の駆動源 (例えばリ 二 ァモ一夕) とを装置ボディ (投影光学系を固定するコラム等) に個別に 設け、 レチクルとウェハとが一定の速度比を保って相対移動されるよう に、 両方の駆動源を精密に同期制御する必要があった。 すなわち、 走査 露光時にレチクルステージを投影光学系に対して 1 次元移動させる リニ ァモータ と、 ウェハステージを投影光学系に対して 1 次元移動させる リ ニァモータ と、 各ステージの投影光学系に対する移動位置を個別に計測 する レ一ザ干渉計の計測値に基づいて各リ ニアモータを個別に精密制御 するサーボ制御回路とが必要となる。 また、 かかる縮小投影光学系を用いる走査型露光装置の場合、 レチク ルステージ (マスクステージ) とウェハステージ (基板ステージ) とが 各々異なる動特性を持っために、 特性の良い方のステージが特性の劣る 方のステージを追いかけてスキャ ンする方法が一般的に採用されている, しか しながら、 特性の劣るステージは装置の骨組みとなるボディ の揺れ などの影響も受けて整定が遅く、 同期性能を向上させるためには、 特性 の良い方のステージと して極めて動特性の良いステージが必要であるば かりでな く、 いわゆるアクティ ブ除振装置 (防振装置) 等のボディ の摇 れを減少させるための特別な装置が必要不可欠であ り、 その分装置構成 が複雑化する と共にコス 卜の上昇を招く という不都合があった。 更には、 上記③、 ④の公報に記載の装置のよう に、 レチクルから ゥェ ハに到る光軸が直線的になっている縮小投影系を使った走査露光装置で は、 一般的にレチクルステージとウェハステージとが共に水平方向に移 動するように配置され、 かつ垂直方向には 8 0 ~ 1 5 O c m程度離れる ように構成される ことから、 レチクルステージは露光装置ボディ の上方 に配置される ことにな り、 レチクルステージの走査露光時のスキャ ン移 動によって装置全体が傾いた り、 装置ボディ を構成する各構造物 (コラ ム、 定盤等) に過大な応力を加えた りする と言った不都合もあった。 また、 レチクルステージ用のリ ニアモータ とウェハステージ用の リ ニ ァモー夕 との同期制御に乱調が発生 したり、 干渉計に計測誤差 (カ ウ ン 卜 ミス) が発生した場合、 ウェハ上のショ ッ ト領域に転写されたパター ン像が走査方向に関する転写倍率が不均一なものとなる といつた不都合 をも有していた。 本発明は、 かかる従来技術の有する不都合に鑑みてなされたもので、 その目的は、 単純な構成で、 装置を構成する構造物に発生する応力を低 減し、 装置全体の傾きや摇れを抑え、 しかもマスクステージと基板ステ ージとの同期性能の向上を図るこ とができる露光装置及び走査露光装置 を提供する ことにある。 本発明の別の目的は、 露光装置に発生する応力を低減し、 装置全体の 傾きや揺れを抑え、 しかもマスク と基板との同期性能の向上を図る こと ができる走査露光方法を提供する ことにある。 発明の開示 In recent years, a scanning type exposure apparatus of the scan type (hereinafter referred to as “S & S type” as appropriate) has been developed to realize a resolution line width of 0 or less as an exposure apparatus for manufacturing semiconductor devices. Aggressive improvements are being made toward full-scale commercialization on semiconductor manufacturing lines. Such an S & S type exposure apparatus is described, for example, in (1) Japanese Patent Application Laid-Open No. 56-111, and (2) SPIE Vol 1088 Optical / Laser Microelectronics 11 (1989), No. 42. Pages 4 to 43, ③ Japanese Patent Application Laid-Open No. 2-229394, ④ Japanese Patent Application Laid-Open No. 4-27776 ^ ^ and the like. Among them, in the above publication, the mask is moved one-dimensionally in the scanning direction at the time of scanning exposure in order to use the 1 × mirror projection in the S & S method, and the semiconductor wafer is scanned in the scanning direction. It is disclosed to be configured to perform a step movement in a direction orthogonal to the step movement. Also, on According to the document described above, a mask (or reticle), a wafer and a mask are used during scanning exposure using a 1/4 reduction projection optical system having an arc-shaped slit view combined with an optical lens and a reflecting mirror. An S & S type reduction projection scanning type exposure apparatus in which the speed ratio of the light beam is precisely controlled to 4: 1 is disclosed. In the above publication (3), an excimer laser is used as the illumination light, and the regular hexagon inscribed in the field of view of the circular image of the normal reduced projection lens is restricted to an effective projection area. An apparatus for performing & S type exposure is disclosed. In the above-mentioned publication, the above-mentioned publication discloses a method for effectively forming a linear slit (rectangular) area along a diameter in a circular image field of a normal reduced projection lens system. An apparatus for performing S & S type exposure with a limited projection area is disclosed. <In addition, Japanese Patent Application Laid-Open No. Hei 6-30973 discloses a method for obtaining a higher resolution. Consists of a plurality of optical lenses, a beam splitter, and a concave mirror. A reduction projection optical system applied to an ArF excimer laser having a wavelength of 200 nm or less as exposure illumination light has been disclosed. I have. A similar projection optical system is also disclosed in Japanese Patent Application Laid-Open No. 5-88087 filed by the same applicant as the present application. In each of the prior arts described above, in a scanning exposure apparatus using a reduction projection optical system, generally, a reticle stage for holding a reticle and a wafer stage for holding a wafer are moved at a speed corresponding to the reciprocal of the reduction magnification of the projection optical system. It is configured to scan by the ratio. For this purpose, a drive source for the reticle stage (for example, a linear motor) and a drive source for the wafer stage (for example, a linear camera) are separately provided in the apparatus body (column for fixing the projection optical system, etc.). Therefore, it was necessary to precisely control both driving sources so that the reticle and the wafer were relatively moved while maintaining a constant speed ratio. That is, the linear reticle stage is moved one-dimensionally with respect to the projection optical system during scanning exposure. A linear motor that moves the wafer stage one-dimensionally with respect to the projection optical system, and a linear motor that measures the movement position of each stage with respect to the projection optical system. A servo control circuit for precise control is required. In the case of a scanning exposure apparatus using such a reduced projection optical system, the reticle stage (mask stage) and the wafer stage (substrate stage) have different dynamic characteristics. The method of scanning after the inferior stage is generally adopted.However, the stage with inferior characteristics has slow settling due to the influence of the body sway which is the frame of the device, and the synchronization performance is poor. In order to improve the performance, it is not only necessary to use a stage with excellent dynamic characteristics as a stage with better characteristics, but also to reduce the deflection of the body such as a so-called active vibration isolator (vibration isolator). A special device is indispensable for this purpose, and the configuration of the device is complicated and the cost is increased. Further, in a scanning exposure apparatus using a reduction projection system in which the optical axis from the reticle to the wafer is linear as in the apparatuses described in the above publications (3) and (4), a reticle is generally used. The reticle stage is located above the body of the exposure apparatus, because both the stage and the wafer stage are arranged to move in the horizontal direction and are separated by about 80 to 15 Ocm in the vertical direction. As a result, the entire apparatus is tilted due to scanning movement during scanning exposure of the reticle stage, or excessive stress is applied to each structure (column, platen, etc.) that constitutes the apparatus body. There were also inconveniences of doing so. Also, a linear motor for the reticle stage and a linear motor for the wafer stage If a turbulence occurs in the synchronization control with the camera or a measurement error (counting mistake) occurs in the interferometer, the pattern image transferred to the shot area on the wafer is transferred in the scanning direction. Had an inconvenience when it became uneven. The present invention has been made in view of the inconveniences of the related art, and has as its object the purpose of reducing the stress generated in a structure constituting an apparatus with a simple configuration, and reducing the inclination and deviation of the entire apparatus. An object of the present invention is to provide an exposure apparatus and a scanning exposure apparatus capable of suppressing the mask stage and improving the synchronization performance between the mask stage and the substrate stage. Another object of the present invention is to provide a scanning exposure method capable of reducing stress generated in an exposure apparatus, suppressing tilt and swing of the entire apparatus, and improving synchronization performance between a mask and a substrate. is there. Disclosure of the invention

本発明の第 1 の態様に従えば、 マスク と感光基板とを同期移動しつつ- 前記マスクに形成されたパターンを投影光学系を介して前記感光基板に 転写する露光装置であって、  According to a first aspect of the present invention, there is provided an exposure apparatus for transferring a pattern formed on the mask to the photosensitive substrate via a projection optical system while synchronously moving the mask and the photosensitive substrate.

ベース部材上に浮上支持された基板ステージと ;  A substrate stage levitated and supported on a base member;

前記基板ステージの質量の前記投影光学系の縮小倍率倍の質量を有し. 前記べ一ス部材上に浮上支持されたマスクステージと ;  A mask stage having a mass that is twice the reduction magnification of the projection optical system of the mass of the substrate stage; and a mask stage floatingly supported on the base member;

前記両ステージ間に設けられ、 前記マスク と基板とを互いに逆向きに 移動するように前記基板ステージとマスクステージを駆動する第 1 のリ ニァモータ とを有する露光装置が提供される。 この露光装置によれば、 マスクステージを基板ステージとがベース部 材上に浮上支持されているので、 両ステージが第 1 の リ ニアモ一夕によ つて移動方向に沿って互いに逆向きに非接触で駆動され、 この際の両ス テ一ジの動きがベース部材その他に何等の力を作用させる こともな く、 運動量は保存される。 ここで、 マスクステージの質量が基板ステージの 質量の投影光学系の縮小倍率倍とされている ことから、 運動量保存の法 則によ り、 マスクステージと基板ステ—ジの速度比が投影光学系の縮小 倍率の逆数となって、 両ステージが正確に同期制御される。 また、 系全 体の重心位置は殆ど変化しないので、 両ステージの移動 (マスク と基板 の同期走査) によ り、 ベース部材を含むボディ本体が揺れたり、 傾いた りする こともない。 本発明の露光装置において、 前記投影光学系は、 前記感光基板上に前 記マスクに形成されたパターンの倒立像を投影する光学系に し得る。 こ のように構成すれば、 マスクのパター ンが非対称な形状のパターンであ つても、 マスクステージと基板ステージとが第 1 のリ ニアモー夕によつ て互いに逆向きに同期移動される際に、 パターンの像が感光基板上に正 確に投影露光される。 本発明の露光装置において、 前記感光基板が基板ステージ上に水平に 保持され、 前記マスクが前記マスクステージ上に垂直に保持される と共 に、 前記投影光学系が、 複数の透過光学素子、 光分割器及び反射光学素 子とを含み、 物体面に配置された前記マスクのバタ一ンを結像面に配置 された前記感光基板上に所定の縮小倍率で投影する光学系であ り得る。 このよう に露光装置を構成する ことによ り、 例えば、 光分割器を介して マスクステージと反対側に請求項 4 に記載のハ一フ T T Lァライ メ ン 卜 検出系を配置する ことが可能にな り、 このように した場合には、 ハーフ T T Lァライ メ ン 卜検出系によ り光分割器を介してマスクに形成された ァライ メ ン 卜マーク と感光基板上のァライ メ ン 卜マーク とを別々に又は 同時に検出する ことが可能にな り、 レチクルァライ メ ン 卜マークの検出 とウェハァライ メ ン トマ一クの検出を単一の検出系によ り兼用する こと が可能になる。 本発明の露光装置において、 前記ベース部材と前記マスクステージと の間に、 当該マスクステージを駆動する第 2のリ ニアモータが設け得る < この構造によれば、 第 1 の リ ニアモータを 0 F F に した状態で、 第 2の リ ニアモータを駆動する ことによ り、 ベ一ス部材に対しマスクステ一ジ を独立して駆動する ことが可能にな り、 これによ り マスクステージの位 置のリセ ッ 卜や微調整が可能になる。 本発明の露光装置において、 前記ベース部材と前記基板ステージとの 間に、 当該基板ステージを駆動する第 3のリ ニアモータが設けられ得る, このよう に露光装置を構成する ことによ り、 第 1 のリ ニアモ一夕 (及び 第 2のリ ニアモータ) を O F Fに した状態で、 第 3のリ ニアモータを駆 動する ことによ り、 ベース部材に対し基板ステージを独立して駆動する ことが可能にな り、 これによ り基板ステージの位置の リセ ッ 卜や微調整 が可能になる。 本発明の露光装置において、 前記第 1 のリ ニアモータによる前記両ス テ一ジの同期移動時の速度比を微調整する回生制動制御回路が前記第 2 のリ ニアモータ及び第 3の リ ニアモータの少な く とも一方に併設され得 る。 このように露光装置を構成すれば、 回生制動制御回路によ り第 2の リ ニアモータ及び第 3のリ ニアモータの少な 〈 とも一方に回生制動作用 を行なわせる こ とによ り、 第 1 のリ ニアモ一夕によって互いに逆向きに 移動されるマスクステージ及び基板ステージの少な く ともいずれか一方 の見かけ上の質量を増加させ、 両ステージの移動時の速度比を微調整す る ことが可能になる。 ここで、 回生制動とは、 モータを一種の発電機と して機能させる こ とによ り、 制動作用を生じさせる ことをいい、 これに よって第 1 のリ ニアモータによって駆動される負荷を増加 (すなわち、 マスクステージ及び基板ステージの少な く とも一方の見かけ上の質量を 増加) させる こ とができる。 この構成に従う露光装置によれば、 両ステ —ジの質量比が所望の値に正確に設定されていない場合に両ステージの 速度比を調整して所望の同期性能を確保する ことができる他、 意識的に 両ステージの質量比を所望の値から僅かにずれしておき、 移動 (走査) 時に回生制動量を適度に調整する ことで常に両ステージの速度比を投影 光学系の縮小倍率の逆数に一致させる ことによ り、 運動量が完全に保存 されない場合にも安定 した同期性能を確保する ことが可能になる。 本発明の露光装置において、 前記基板ステージは、 前記感光基板が同 期移動される第 1 方向に駆動される第 1 ステージと、 前記感光基板を保 持して前記第 1 ステージと一体的に前記第 1 方向に移動するとともに該 第 1 ステージに案内されて第 1 方向に直交する第 2方向に移動可能な第 2ステージとを有し得る。 このよう に露光装置を構成すれば、 基板を保 持する第 2ステージを第 1 ステージと一体的に第 1 方向に移動させて、 走査露光を行ない、 次いで第 2ステージを第 1 ステージに対して第 1 方 向に直交する第 2方向に移動させる こ とを繰り返すことによ り、 いわゆ るステップ ■ アン ド · スキャ ン方式の露光を容易に実現できる。 本発明の第 2の態様に従えば、 マスク及び基板とそれぞれほぼ直交す る光軸を有する投影光学系を備え、 前記マスクのパターンを前記投影光 学系を介して前記基板に転写する走査露光装置において、 An exposure apparatus is provided between the two stages, and has a first linear motor that drives the substrate stage and the mask stage so as to move the mask and the substrate in directions opposite to each other. According to this exposure apparatus, since the mask stage and the substrate stage are supported by floating above the base member, the two stages are not in contact with each other in the direction opposite to each other along the moving direction by the first linear motion. The movement of both stages at this time does not exert any force on the base member or the like, and the momentum is preserved. Here, since the mass of the mask stage is set to be the magnification of the projection optical system times the mass of the substrate stage, the velocity ratio between the mask stage and the substrate stage is determined by the law of conservation of momentum. As the reciprocal of the reduction ratio, both stages are accurately synchronized. Also, since the position of the center of gravity of the entire system hardly changes, the body body including the base member does not shake or tilt due to movement of both stages (synchronous scanning of the mask and the substrate). In the exposure apparatus of the present invention, the projection optical system may be an optical system that projects an inverted image of the pattern formed on the photosensitive substrate on the photosensitive substrate. With this configuration, even when the mask pattern is an asymmetric pattern, the mask stage and the substrate stage are synchronously moved in opposite directions by the first linear motion. The image of the pattern is accurately projected and exposed on the photosensitive substrate. In the exposure apparatus of the present invention, the photosensitive substrate is horizontally held on a substrate stage, the mask is vertically held on the mask stage, and the projection optical system includes a plurality of transmission optical elements, The optical system may include a splitter and a reflection optical element, and project the pattern of the mask disposed on the object plane onto the photosensitive substrate disposed on the image plane at a predetermined reduction magnification. By configuring the exposure apparatus in this way, for example, the half TTL alignment element according to claim 4 on the opposite side to the mask stage via a light splitter. In this case, a half TTL alignment detection system can be used to arrange an alignment mark formed on a mask through a light splitter and a photosensitive substrate. The above alignment marks can be detected separately or simultaneously, and the detection of reticle alignment marks and the detection of wafer alignment marks can be shared by a single detection system. Becomes possible. In the exposure apparatus of the present invention, a second linear motor for driving the mask stage may be provided between the base member and the mask stage. <According to this structure, the first linear motor is set to 0FF. By driving the second linear motor in this state, it is possible to independently drive the mask stage relative to the base member, thereby resetting the position of the mask stage. And fine-tuning is possible. In the exposure apparatus of the present invention, a third linear motor that drives the substrate stage may be provided between the base member and the substrate stage. By configuring the exposure apparatus in this manner, the first By driving the third linear motor with the first linear motor (and the second linear motor) turned off, the substrate stage can be driven independently with respect to the base member. Thus, reset and fine adjustment of the position of the substrate stage can be performed. In the exposure apparatus of the present invention, a regenerative braking control circuit that finely adjusts a speed ratio during synchronous movement of the two stages by the first linear motor includes a small number of the second linear motor and the third linear motor. At least one can be attached to one. With this configuration of the exposure apparatus, the regenerative braking control circuit allows the second By causing at least one of the linear motor and the third linear motor to perform a regenerative braking action, at least one of the mask stage and the substrate stage that are moved in opposite directions by the first linear motor. It is possible to increase the apparent mass of one of them, and to fine-tune the speed ratio when moving both stages. Here, the regenerative braking means that the motor functions as a kind of generator to generate a braking action, thereby increasing the load driven by the first linear motor ( That is, the apparent mass of at least one of the mask stage and the substrate stage can be increased. According to the exposure apparatus according to this configuration, when the mass ratio of both stages is not accurately set to a desired value, it is possible to adjust the speed ratio of both stages to secure desired synchronization performance. By intentionally shifting the mass ratio of both stages slightly from the desired value and adjusting the amount of regenerative braking appropriately during movement (scanning), the speed ratio of both stages is always projected The reciprocal of the reduction ratio of the optical system By ensuring that the momentum is not completely preserved, stable synchronization performance can be ensured. In the exposure apparatus of the present invention, the substrate stage may include a first stage driven in a first direction in which the photosensitive substrate is synchronously moved, and the first stage holding the photosensitive substrate and being integrated with the first stage. And a second stage movable in a first direction and guided by the first stage and movable in a second direction orthogonal to the first direction. By configuring the exposure apparatus in this manner, the second stage holding the substrate is moved in the first direction integrally with the first stage to perform scanning exposure, and then the second stage is moved relative to the first stage. By repeating the movement in the second direction orthogonal to the first direction, so-called step-and-scan exposure can be easily realized. According to a second aspect of the present invention, there is provided a scanning optical system including a projection optical system having an optical axis substantially orthogonal to a mask and a substrate, and transferring a pattern of the mask to the substrate via the projection optical system. In the device,

ベースと、  Base and

前記べ一ス上で前記マスクを移動する第 1 ステージと、  A first stage for moving the mask on the base;

前記ベース上で前記基板を移動する第 2ステージと、  A second stage for moving the substrate on the base;

前記投影光学系の倍率に応じた速度比で前記マスク と前記基板とを同 期移動するために、 前記第 1 ステージと前記第 2 ステージとに接続され る駆動系とを備え、  A drive system connected to the first stage and the second stage for synchronously moving the mask and the substrate at a speed ratio according to a magnification of the projection optical system;

前記駆動系は、 前記同期移動によって生じる反力をほぼ相殺するよう に、 前記第 1 ステージと前記第 2 ステージとを所定方向に沿って逆向き に駆動する ことを特徴とする走査露光装置が提供される。 本発明の第 3の態様に従えば、 マスクのパターンを投影光学系を介し て基板に転写する走査露光方法において、  The drive exposure system drives the first stage and the second stage in opposite directions along a predetermined direction so as to substantially cancel a reaction force generated by the synchronous movement. Is done. According to a third aspect of the present invention, in a scanning exposure method for transferring a pattern of a mask to a substrate via a projection optical system,

前記マスク と前記基板とを、 前記投影光学系の光軸と垂直な同一平面 内に配置し、  The mask and the substrate are arranged on the same plane perpendicular to the optical axis of the projection optical system,

前記マスクのパターンの部分倒立像を前記基板上に投影し、  Projecting a partial inverted image of the pattern of the mask onto the substrate,

前記平面上の所定方向に沿って逆向きに前記マスク と前記基板とを同 期移動し、 それによ り前記同期移動によって生じる反力をほぼ相殺する ことを特徴とする走査露光方法が提供される。  A scanning exposure method for synchronously moving the mask and the substrate in opposite directions along a predetermined direction on the plane, thereby substantially canceling a reaction force generated by the synchronous movement. .

図面の簡単な説明 BRIEF DESCRIPTION OF THE FIGURES

図 1 は本発明の原理的な構成を示す図である。  FIG. 1 is a diagram showing a basic configuration of the present invention.

図 2は第 1 実施例の露光装置を示す概略構成図である。  FIG. 2 is a schematic configuration diagram showing the exposure apparatus of the first embodiment.

図 3は図 1 の装置の概略平面図である。  FIG. 3 is a schematic plan view of the apparatus of FIG.

図 4は図 1 の装置の制御系の構成を示すブロ ッ ク図である。 図 5は第 2実施例の装置の制御系の構成を示すブロ ッ ク図である。 FIG. 4 is a block diagram showing the configuration of the control system of the apparatus shown in FIG. FIG. 5 is a block diagram showing a configuration of a control system of the device of the second embodiment.

図 6 Aは本発明に従う露光装置の変形例の概略正面図である。  FIG. 6A is a schematic front view of a modified example of the exposure apparatus according to the present invention.

図 6 Bは図 6 Aに示した露光装置の変形例の右側面図である。 発明を実施するための最良の形態  FIG. 6B is a right side view of a modified example of the exposure apparatus shown in FIG. 6A. BEST MODE FOR CARRYING OUT THE INVENTION

以下、 本発明の露光装置の原理的構成を図 1 に基づいて説明する。 図 1 には、 本発明に係る露光装置 1 0の原理的構成が示されている。 この 露光装置 1 0は、 ベース部材と しての除振台 1 2 と、 この除振台 1 2上 にエア—ベア リ ング (空気軸受け) 1 3 を介して浮上支持された基板ス テージ 1 4 と、 この基板ステージ 1 4上に浮上支持されたマスクステ一 ジ 1 6 とを備えている。 そ して、 基板ステージ 1 4 とマスクステージ 1 6 との間には、 リ ニアモータ 1 8 が設けられている。 すなわち、 例えば, 質量 M r のマスクステージ 1 6側にはリ ニアモータ 1 8の駆動コ イル 1 8 Aが設けられ、 質量 M wの基板ステージ 1 4側にはリ ニアモータ 1 8 のマグネッ ト ■ 卜ラ ッ ク部 1 8 Bが設けられている。 また、 マスクステ —ジ 1 6の質量 M r と基板ステージ 1 4の質量 M wの比が、 不図示の投 影光学系の縮小倍率倍になっている。 このように して構成された本発明に係る露光装置 1 0によれば、 両ス テージ 1 4、 1 6 が浮上支持されている ことから、 リ ニアモータ 1 8が 励起されたとき、 内力のみが働き、 大きさが等し 〈 方向が反対の作用力 F 1 と反作用力 F 2 ( F 2 =— F 1 ) がそれぞれのステージ 1 6、 1 4 に加えられる。 この力によって生じる両ステージ 1 6、 1 4の移動速度 を V r、 V wとすると、 空気抵抗等を無視して考えれば、 運動量保存の 法則によ り、  Hereinafter, the principle configuration of the exposure apparatus of the present invention will be described with reference to FIG. FIG. 1 shows a basic configuration of an exposure apparatus 10 according to the present invention. The exposure apparatus 10 includes a vibration isolation table 12 as a base member, and a substrate stage 1 floatingly supported on the vibration isolation table 12 via an air-bearing (air bearing) 13. 4 and a mask stage 16 which is floated and supported on the substrate stage 14. Further, a linear motor 18 is provided between the substrate stage 14 and the mask stage 16. That is, for example, the drive coil 18 A of the linear motor 18 is provided on the mask stage 16 side having the mass M r, and the magnet of the linear motor 18 is provided on the substrate stage 14 side having the mass M w. A rack section 18B is provided. Also, the ratio of the mass Mr of the mask stage 16 to the mass Mw of the substrate stage 14 is twice the reduction magnification of the projection optical system (not shown). According to the exposure apparatus 10 of the present invention configured as described above, since both stages 14 and 16 are supported by floating, only the internal force is generated when the linear motor 18 is excited. Working, equal in magnitude and <opposite direction acting force F 1 and reaction force F 2 (F 2 = — F 1) are applied to the respective stages 16, 14. Assuming that the moving speeds of both stages 16 and 14 caused by this force are Vr and Vw, and ignoring air resistance etc., according to the law of conservation of momentum,

M r · V r = M w · V w が成り立つ。 従って、 両ステージ 1 6、 1 4の速度比は、 MrVr = MwVw Holds. Therefore, the speed ratio of both stages 16 and 14 is

V r /V w = M w/M r  Vr / Vw = Mw / Mr

となる。 しかるに、 本発明の場合、 両ステージ 1 6、 1 4の質量の比 M r / M wは、 前記の如 〈 不図示の投影光学系の縮小倍率 M piと等し く 設 定されているから、 Becomes However, in the case of the present invention, the mass ratio Mr / Mw of the two stages 16 and 14 is set to be equal to the aforementioned <reduction magnification Mpi of the projection optical system (not shown). ,

V r / V w = M w/M r = 1 / M pl  Vr / Vw = Mw / Mr = 1 / Mpl

となって、 両ステージ 1 6、 1 4の速度比が投影光学系の縮小倍率の逆 数と一致する。 従って、 理想的に、 運動量が保存されている系が構成さ れている場合には、 基板ステージ 1 4及びマスクステージ 1 6の一方の みの速度 (又位置) をサ―ボ制御すれば、 常に両ステージ 1 4、 1 6 を 確実に同期走査 (移動) する ことができる。 例えば、 マスクステージ 1 6にサ一ボがなされた場合、 仮に、 マスク ステージ 1 6 が振動的な動きを しても、 基板ステージ 1 4は質量比の逆 数と同 じ速度比でマスクステージ 1 6 と相似的な振動的な動きをする。 また、 運動量が保存されるため、 系の重心位置は常に一定であるから除 振台 1 2 を揺らすこともない。 従って、 両ステージ 1 6、 1 4 (両ステ ージ 1 6、 1 4 にそれぞれ保持されたマスク と基板) の走査時の同期誤 差は常に零となる。 実施例 Thus, the speed ratio between the two stages 16 and 14 matches the reciprocal of the reduction ratio of the projection optical system. Therefore, ideally, when a system in which the momentum is stored is configured, if the speed (and position) of only one of the substrate stage 14 and the mask stage 16 is servo-controlled, Synchronous scanning (movement) of both stages 14 and 16 is always possible. For example, if the mask stage 16 is subjected to a servo, even if the mask stage 16 moves in an oscillating manner, the substrate stage 14 has the same speed ratio as the reciprocal of the mass ratio. Makes an oscillating movement similar to 6. In addition, since the momentum is preserved, the position of the center of gravity of the system is always constant, so that the vibration isolator 12 does not swing. Therefore, the synchronization error at the time of scanning of both stages 16 and 14 (the mask and the substrate held at both stages 16 and 14) is always zero. Example

《第 1 実施例》  << First Example >>

以下、 本発明の第 1 実施例を図 2 ない し図 4 に基づいて説明する。 図 2 ない し図 3 には、 第 1 実施例に係るステップ ■ アン ド · スキャ ン方式 の露光装置 1 0 0の主要部の構成が示されている。 この露光装置 1 0 0は、 不図示の除振パッ ド上に水平に保持されたべ -ス部材と してのベース構造体 2 0 0 と、 このべ一ス構造体 2 0 0上に 浮上支持された基板ステージと してのウェハステージ 1 4及びマスクス テージと してのレチクルステージ体 2 0 6 と、 ウェハステージ 1 4の上 方で不図示の本体コラムに保持されベース構造体 2 0 0に固定された投 影光学形 P L と、 同 じ く 不図示の本体コラムに保持されベース構造体 2 0 0に固定された照明光学系 2 1 2 とを備えている。 ここで、 前記ゥェ ハステージ 1 4は、 X方向 (走査方向) に移動可能な第 1 のステージと しての第 1 ウェハステージ体 2 0 8 と、 この第 1 ウェハステージ体 2 0 8に案内され X方向に直交する Y方向に移動可能な第 2ステージと して の第 2 ウェハステージ体 2 2 0 とから構成されている。 なお、 この具体 的構成については、 後に詳述する。 ベース構造体 2 0 0の上面には、 図 2 における Y方向の一端 (左端) 部側に Y方向に直交する X方向 (紙面に直交する方向) に互いに平行に 延びた 2本の角柱状の固定ガイ ド レール 2 0 2、 2 0 4が突設され、 ベ ース構造体 2 0 0の他の上面は、 各移動体 (ステージ類) を Z方向に支 持して X Y平面内でスムーズに移動させるためにフラ ッ 卜に研磨されて いる。 一方の固定ガイ ドレール 2 0 2 には、 X方向に移動可能な レチク ルステージ体 2 0 6 を Z方向に規定するガイ ド面 2 0 2 A と Y方向に規 定するガイ ド面 2 0 2 B とが形成され、 他方の固定ガイ ド レール 2 0 4 には、 X方向に移動可能な第 1 ウェハステージ体 2 0 8 を Y方向に規定 するガイ ド面 2 0 4 Aが形成されている。 レチクルステージ体 2 0 6 と しては、 図 2 に示されるように、 マスク と してのレチクル R を垂直に保持する縱型のものが使用され、 このレチ クルステージ体 2 0 6 には、 レチクル R を垂直に保持して投影光学系 P Lの光軸 A X と垂直な面 (図中の X Z面) 内で並進微動と回転微動とを 行う レチクル微動ステージ 2 1 0が設けられている。 前記照明光学系 2 1 2は、 レチクル Rに関して投影光学系 P L と反対 側に配置され、 レチクル Rの矩形のパターン領域を走査露光時の走査方 向 ( X方向) と直交した方向にス リ ツ 卜状 (又は矩形状) に延びた強度 分布の照明光で照射する。 その直線的なス リ ッ ト状照明光で照射される レチクル Rのパターン部分は、 投影光学系 P Lの水平な光軸 A X と垂直 な物体面側の円形視野の中央に位置し、 透過光学素子と しての第 1 レ ン ズ群 G 1 、 第 2 レ ンズ群 G 2、 第 3 レ ンズ群 G 3、 光分割器と してのビ —ムスプリ ッタ B S及び反射光学素子と しての凹面鏡 M R によって両側 テレセン ト リ ッ クに構成される所定の縮小倍率 M p i (本実施例では 1 / 4 とする) の投影光学系 P L を通して、 例えば、 0 . 3 5 m以下の解 像力でウェハ W上に投影される。 ここで、 この投影光学系と しては、 レ チクル Rのパター ン面に形成された不図示の回路パター ンの倒立像 ( X 軸上で倒立) をウェハ W上に投影するものが使用される。 なお、 このよ うな投影光学系 P Lの詳細な構成は、 先に挙げた特開平 5 — 8 8 0 8 7 号公報は特開平 6 — 3 0 0 9 7 3号公報等に詳し く 開示されているので, こ こではそれ以上の説明を省略する。 さて、 前記レチクルステージ体 2 0 6の底部には、 固定ガイ ド レール 2 0 2のガイ ド面 2 0 2 Aに対向 してレチクルステージ体 2 0 6の自重 を支えるエアベア リ ング (空気軸受け) 用のパッ ド P D A、 固定ガイ ド レール 2 0 2のガイ ド面 2 0 2 Bに対向 してレチクルステージ体 2 0 6 の Y方向変位を拘束するエアベア リ ング用のパッ ド P D B、 及び固定ガ ィ ド レール 2 0 2 と 2 0 4 との間のベース構造体 2 0 0の表面 2 0 O A に対向 してレチクルステ一ジ体 2 0 6の自重を支えるエアべァ リ ング用 の ノ、。ッ ド P D Cが固定されている。 これらのパッ ドのうち Y方向変位拘 束用のパッ ド P D Bは、 加圧空気を噴出する複数のエアパッ ド部とそれ と交互に X方向 (紙面と直交する方向) に配置されて空気を吸引する複 数のバキュームパッ ド部とを組合せた空圧/真空コ ンビネーショ ン型パ ッ ド (真空予圧型空気軸受け) で構成される。 こ の空圧/真空コ ンビネ —シヨ ン型パッ ドによれば、 バキュームパッ ド部の吸引力 (予圧力) と エアパッ ド部からの噴出空気の圧力との釣合いによ り、 レチクルステ一 ジ体 2 0 6 がガイ ド面から所定のク リ アラ ンスを隔てて浮上支持される ( また、 ノ、 'ッ ド P D A 、 ノ、。 ヅ ド P D Cの場合は、 レチクルステージ体 2 0 6の自重が予圧力と して作用 し、 この自重とノ、。ッ ド P D A 、 ノ、 'ッ ド P D Cからの噴出空気の圧力との釣合いによ り、 レチクルステージ体 2 0 6 が、 ガイ ド面から所定のク リ アラ ンスを隔てて浮上支持される。 以下の 説明においても、 パッ ドが自重を支える とは、 この意味で用いる。 固定ガイ ド レール 2 0 4の Y方向他端側部分のベース構造体 2 0 0上 面に、 第 1 ウェハステージ体 2 0 8 と、 第 2 ウェハステ一ジ体 2 2 0 と から成る前記ウェハステージ 1 4が浮上支持されている。 第 1 ウェハステージ体 2 0 8は、 ベース構造体 2 0 0上で X Y平面に 広がった矩形フ レーム上に形成され (図 3参照) 、 その自重はべ—ス構 造体 2 0 0の上面と対向 して 4隅に配置されたエアべァ リ ング用のパッ ド P D D、 P D Eで支えられる。 そ して、 第 1 ウェハステージ体 2 0 8 の Y方向 (紙面内の左右方向) の変位は、 固定ガイ ド レール 2 0 4の垂 直なガイ ド面 2 0 4 Aと対向 して第 1 ウェハステージ体 2 0 8 に固定さ れた空圧/真空コ ンビネーショ ン型パッ ド P D Fで拘束される。 これに よって、 第 1 ウェハステージ体 2 0 8はガイ ド面 2 0 4 A とべ—ス構造 体 2 0 0の表面とに案内されて X方向にフ リ ク ショ ンレスで移動可能と なる。 そ して、 この第 1 ウェハステージ体 2 0 8 と レチクルステージ体 2 0 6 との間には、 X方向に沿って配置された第 1 のリニアモータ 2 1 6 が 設けられる。 この第 1 のリ ニアモ一夕 2 1 6 は、 第 1 ウェハステージ体 2 0 8側に固定され、 X方向の移動ス 卜 ロークに渡って延びるマグネッ 卜 - 卜ラ ッ ク部 2 1 6 A (このマグネッ ト . トラ ック部 2 1 6 Aは、 X 軸方向に延びる断面コ字状のヨーク とこのヨークの上下面に固定された 一対のマグネッ ト とから成る) と、 レチクルステージ体 2 0 6側に固定 された駆動コ イ ル部 2 1 6 B とで構成され、 X方向の推力を発生する。 すなわち、 本第 1 実施例では、 リ ニアモータ 2 1 6が駆動される ことに よ り、 例えば、 駆動コ イル部 2 1 6 B と一体的にレチクルステージ部 2 0 6 が紙面手前側に駆動される と、 その反作用によ り マグネッ ト . トラ ッ ク部 2 1 6 A と一体的にウェハステージ 1 4 が紙面奥側に駆動される よう (こなっている。 また、 前記レチクルステージ体 2 0 6は、 X方向に沿って設けられた 第 2のリ ニアモータ 2 1 4によって単独で X方向に移動可能とされる。 このリニアモータ 2 1 4は、 ベース構造体 2 0 0側に固定され、 レチク ルステージ体 2 0 6の X方向の移動ス ト ロークに渡るマグネッ ト · トラ ッ ク部 2 1 4 A ( このマグネッ ト · トラ ッ ク部 2 1 4 Aは、 ガイ ド面 2 0 0 A上に固定された断面 U字状のヨーク とこのヨークの左右内面に固 定された一対のマグネッ ト とから成る ) と、 レチクルステージ体 2 0 6 側に固定された駆動コ イル部 2 1 4 B とで構成され、 X方向の推力を発 声する。 この第 2の リ ニアモータ 2 1 4は、 レチクルステージ体 2 0 6 を所定のリ セ ッ 卜位置に戻す際に使用される他、 種々の役割を有するが. これについては後述する。 さ らに、 前記第 1 ウェハステージ体 2 0 8のフ レームの内側には、 図 2及び図 3 に示されるように、 ウェハ Wを真空吸着する ウェハホルダ 2 1 8 と基準マーク板 F Mとを搭載した第 2 ウェハステージ体 2 2 0が Y 方向に移動可能に保持される。 なお、 図 3は X Y平面上で見たウェハス テ一ジ体の構成を表 している。 この第 2 ウェハステージ体 2 2 0の下部 には、 図 2 に示されるよう にベース構造体 2 0 0の上面と対向 して、 そ の自重を支えるためのエアべァ リ ング用の複数のパッ ド P D I、 P D G が取り付けられている。 また、 第 2 ウェハステージ体 2 2 0 を挟んで Y方向に延びた第 1 ゥェ ハステージ体 2 0 8の 2本の直線フ レーム部のいずれか一方の内側面に は、 図 3 にも示されるよう に第 2 ウェハステージ体 2 2 0 と Y方向に案 内する ( X方向変位を拘束する) ためのガイ ド面 2 2 2 が形成され、 第 2 ウェハステージ体 2 2 0の一方の端部にはガイ ド面 2 2 2 と対向する よう な一対の空圧/真空コ ンビネーショ ン型パッ ド P D H が固定されて いる。 さ らに、 第 1 ウェハステージ体 2 0 8の Y方向に延びた 2本の直線フ レーム部の各々 と第 2 ウェハステージ体 2 2 0 との間には、 図 3 に示さ れるように第 2 ウェハステージ体 2 2 0 を第 1 ウェハステージ体 2 0 8 に対して Y方向に移動させる一対の リ ニアモータ 2 4 0、 2 4 2 が設け られる。 その一対のリニアモータ 2 4 0、 2 4 2の各駆動コ イル部 2 4 0 A、 2 4 2 Aは第 2 ウェハステージ体 2 2 0の両側に固定されるので. 各リ ニアモータ 2 4 0、 2 4 2の駆動量を微妙に変える ことで第 2 ゥェ ハステージ体 2 2 0 をべ—ス構造体 2 0 0の表面上で微小回転 (秒才一 ダー) させる ことができる。 ここで、 図 3 を参照してレチクル R と第 1 、 第 2 ウェハステージ体 2 0 8、 2 2 0 との X Y平面上での反値構成をさ らに説明する。 図 3 にお いては、 X Z平面内でのレチクル Rの X方向 (走査方向) の移動位置と レチクル Rの X Z平面内での微小回転量 (ョ 一イ ング誤差) は、 レチク ルステージ体 2 0 6 に設けられた微動ステージ 2 1 0の一部に固定され た反射鏡 C M X に測長用のレーザビームを投射し、 その反射ビームを受 光する レーザ干渉計 R I F X、 R I F 0によって逐次計測される。 また. 図 2、 3のいずれにも示されていないが、 レチクル微動ステージ 2 1 0 の Z方向 (図 2では紙面内の上下方向、 図 3では紙面に直交する方向) に関する位置を逐次計測する レーザ干渉計 R I F yも設けられている。 ここで、 このレーザ干渉計 R I F yは、 レチクル微動ステージ 2 1 0の Z方向位置を計測するのであるが、 ウェハステージ座標系で考えた場合. この Z方向位置は、 Y方向位置に対応するので、 敢てレ一ザ干渉計 R I F y という符号を用いている。 従って、 以下の説明では、 このレーザ干 渉計 R I F yの計測値は、 P Y と表現する。 また、 ウェハ Wの X Y平面内での座標位置は、 第 2 ウェハステージ体 2 2 0上の Y方向の他端 (右端) に X軸方向に延設された移動鏡 M yに 測長用のレーザビ一厶を投射し、 その反射ビームを受光する レーザ干渉 計 W I F y と、 第 2 ウェハステージ体 2 2 0上の X方向の一端に Y軸方 向に延設された移動鏡 M x に測長用のレーザビームを投射し、 その反射 ビームを受光する レーザ干渉計 W I F X とによって逐次計測される。 各 干渉計 W I F X , W I F yは、 同時に第 2 ウェハステージ体 2 2 0の微 小回転量 (ョ一イ ング誤差) も逐次計測している。 なお、 移動鏡、 干渉 計ともに図 2では図示が省略されている。 以上の各干渉計 R I F x、 R I F Θ R I F y、 W I F x、 W I F y は、 いずれもベース構造体 2 0 0 を基準と してレチクル Rやウェハ Wの 座標位置を計測するよう に、 基準となる平面鏡やコーナ—プリズム (い ずれも図示せず) はベース構造体 2 0 0に対して固定されている。 ところで、 図 3 中のウェハ Wには 1 つのショ ッ 卜領域 S Aが示されて いるが、 図 3の状態ではショ ッ 卜領域 S Aの中心点が投影光学系 P しの 垂直な光軸 A X (図 2 中のレ ンズ群 G 3の光軸) と丁度合致した瞬間を 表し、 そのとき レチクル Rのパターン領域の中心点も水平な光軸 A X ( 図 2 中のレ ンズ群 G 1 、 G 2の光軸) と丁度合致する。 この他、 本第 1 実施例の露光装置 1 0 0では、 投影光学系 P L と レチ クル R との間から投影光学系 P Lの投影視野の周辺部を介して、 ウェハ W上または基準マーク板 F M上に形成されたァライ メ ン 卜マークを光電 的に検出する T T L (スルー ' ザ ' レ ンズ) 方式のァライ メ ン 卜光学系 2 3 0 と、 ビ一ムスプリ ッ タ B S と第 3 レ ンズ群 G 3 とを介してウェハ W上または基準マーク板 F M上のァライ メ ン トマーク を検出 した り、 ビ 一ムスプリ ッ タ B S と第 2、 1 レ ンズ群 G 2、 G 1 とを介してレチクル R上のァライ メ ン 卜マークを検出 したりするハ一フ T T L方式のァライ メ ン 卜光学系 2 3 2 とが設けられている。 以上の構成において、 レチクルステージ体 2 0 6 と レチクル微動ステ ージ 2 1 0 との両方の質量の合計値 M r と、 ウェハステージ 1 4、 すな わち第 1 ウェハステージ体 2 0 8 と第 2 ウェハステージ体 2 2 0 との両 方の質量の合計値 M wとの比は、 投影光学系 P Lの縮小倍率 M piと等し く なるように設定されている。 本実施例の場合は、 前記の如 く、 投影光 学系の倍率 M plが 1 / 4であるから、 質量比 M r /M wも 1 /4に設定 される。 具体的な一例を挙げると、 使用される ウェハ Wの直径に依存す る処が大きいがウェハステージ体の合計の質量 M wを 4 0〜 1 0 0 K g 程度、 レチクルステージ体の合計の質量 M 「 を 1 0〜 2 5 K g程度にす る ことができる。 図 4には、 この第 1 実施例に係る露光装置 1 0 0の制御系の構成が示 されている。 この制御系は、 ァライ メ ン 卜制御系 2 5 9、 ステージ主制 御系 2 6 0、 駆動回路 2 5 3、 駆動系 2 5 4、 主走査駆動系 2 5 5及び 駆動回路 2 5 6等を含んで構成されている。 こ こで、 この制御系の上記 構成各部についてその作用とともに説明する。 前述した T T Lァライ メ ン 卜検出系 2 3 0からの検出情報と、 ハーフ T T Lァライ メ ン 卜検出系 2 3 2からの検出情報とは、 ァライ メ ン 卜制 御系 2 5 9に入力され、 こ こでウェハ W、 レチクル R、 または基準マ一 ク板 F M上のァライ メ ン 卜マークの座標位置や位置ずれ誤差が決定され る o ステージ主制御系 2 6 0は、 不図示のオペレーショ ン用のミニ ■ コ ン ピュ一夕 とイ ンタ一フェースされ、 前述した各リ ニアモ一タ 2 1 4、 2 1 6、 2 4 0、 2 4 2、 レチクル微動ステージ 2 1 0 をそれぞれ駆動制 御する駆動系 2 5 4、 主走査駆動系 2 5 5、 駆動回路 2 5 6、 駆動回路 2 5 3 と接続される。 この内、 駆動回路 2 5 3は、 レチクル側の干渉計 R I F X, R I F Θ R I F yによって計測される X方向、 Y方向、 回転 (ョ一イ ング) 方向 の各位置情報 P X , P Y, P Θ と主制御系 2 6 0からの指令情報とに基 づいてレチクル微動ステージ 2 1 0 をサ一ボ制御 し、 ァライ メ ン 卜時や 走査露光中にレチクル R を微小移動させる。 また、 駆動系 2 5 4は、 レチクル側の干渉計 R I F Xによって計測さ れる位置情報 P X (及び速度情報 V x ) と主制御系 2 6 0 からの指令情 報とに基づいて第 2のリ ニアモータ 2 1 4の駆動をサーボ制御する。 また、 主走査駆動回路 2 5 5は、 主に走査露光時に作動し、 レチクル 側の干渉計 R I F Xによって計測される速度情報 V X (又は位置情報 P X ) とウェハ側の干渉計 W I F X によつて計測される速度情報 V X (又 は位置情報 P X ) とにいずれか一方、 あるいは両方をモニタ しつつ、 レ チクルステージ体 2 0 6 と第 1 ウェハステージ体 2 0 8の少な く とも一 方の絶対速度が主制御系 2 6 0からの速度指令情報と等し く なるように 第 1 のリ ニアモータ 2 1 6 をサーボ制御する。 駆動回路 2 5 6 は、 ウェハ側の干渉計 W I F X , W I F y によって計 測される位置情報 P X , P Y , P S と主制御系 2 6 0からの指令情報と に基づいて、 前述した一対のリニアモータ 2 4 0、 2 4 2の駆動をサ一 ボ制御する。 次に、 上述のよう に して構成された本第 1 実施例の露光装置 1 0 0の 走査露光時の動作を説明する。 こ こでは、 ハーフ T T Lァライ メ ン 卜検 出系 2 3 2 による レチクルァライ メ ン 卜及び T T Lァライ メ ン ト検出系 2 3 0による レチクル R と ウェハ Wのグロ一バルァライ メ ン 卜及び基準 板 F Mを用いたベースライ ン計測等の事前準備は、 完了 しているものと する。 まず、 ステージ主制御系 2 6 0では、 投影光学系 P Lの露光フ ィ 一ル ド内に、 ウェハ W上の所定のショ ッ 卜領域の X軸方向の一端部を位置決 めすべ〈、 主走査駆動系 2 5 4及び駆動回路 2 5 6 に指令を与えて、 リ 二ァモ一夕 2 1 6及びリ ニアモータ 2 4 0、 2 4 2 を駆動する。 これに よ り、 第 2 ウェハステージ体 2 2 0 が、 第 1 ウェハステージ体 2 0 8 と —体的にレチクルステージ体 2 0 6 と反対方向に X移動されるとともに 第 1 のウェハステージ体 2 0 8に対して Y方向に駆動され、 当該ショ ッ 卜領域の X軸方向に一端部が投影光学系 P Lの露光フ ィ ール ド内に、 位 置決めされる。 次に、 ステージ主制御系 2 6 0では、 駆動系 2 5 4 を介 して第 2のリ ニアモータ 2 1 4を駆動してレクチルステ一ジ体 2 0 6 を 所定のリセッ ト位置に戻す。 これによ り、 レチクルの X軸方向の他端部 が投影光学系 P Lの露光フ ィ ール ドに一致する。 なお、 この場合におい て、 レクチルステージ体 2 0 6 が X方向に位置変化しないように、 第 2 のリ ニアモータ 2 1 4 を レチクル用干渉計 2 5 0の計測値に基づいてサ ーボ制御 した状態で、 第 1 のリニアモータ 2 1 6 を駆動させて第 1 、 第Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. FIGS. 2 to 3 show the configuration of the main part of an exposure apparatus 100 of the step 1 and scan type according to the first embodiment. The exposure apparatus 100 includes a base structure 200 as a base member horizontally held on a vibration isolating pad (not shown), and a floating support on the base structure 200. And a reticle stage body 206 as a mask stage, and a base structure 200 held by a main body column (not shown) above the wafer stage 14. It includes a fixed projection optical type PL and an illumination optical system 2 12 similarly held by a main body column (not shown) and fixed to a base structure 200. Here, the wafer stage 14 has a first wafer stage body 208 as a first stage movable in the X direction (scanning direction) and a first wafer stage body 208. A second wafer stage body 220 is provided as a second stage that is guided and movable in the Y direction orthogonal to the X direction. This specific configuration will be described later in detail. On the top surface of the base structure 200, two prisms extending parallel to each other in the X direction (the direction perpendicular to the paper) perpendicular to the Y direction on the one end (left end) side in the Y direction in FIG. Fixed guide rails 202, 204 are protruded, and the other top surface of the base structure 200 supports each moving body (stages) in the Z direction and is smooth in the XY plane. Flat polished to move to On one fixed guide rail 202, a guide surface 202 that defines the reticle stage body 206 movable in the X direction in the Z direction and a guide surface 202 that defines the reticle stage body 206 in the Y direction are provided. B is formed, and the other fixed guide rail 204 has a guide surface 204 A that defines the first wafer stage body 208 movable in the X direction in the Y direction. . As the reticle stage body 206, as shown in FIG. 2, a vertical type that holds a reticle R as a mask vertically is used. The reticle fine stage 2 holds the reticle R vertically and performs fine translation and rotation in a plane perpendicular to the optical axis AX of the projection optical system PL (XZ plane in the figure). 10 is provided. The illumination optical system 211 is disposed on the side opposite to the projection optical system PL with respect to the reticle R, and slits the rectangular pattern area of the reticle R in a direction orthogonal to the scanning direction (X direction) during scanning exposure. Irradiation is performed with illumination light having an intensity distribution extending in a rectangular shape (or rectangular shape). The pattern portion of the reticle R illuminated by the linear slit illumination light is located at the center of the circular visual field on the object plane perpendicular to the horizontal optical axis AX of the projection optical system PL, and the transmission optical element The first lens group G 1, the second lens group G 2, the third lens group G 3, the beam splitter BS as a light splitter, and the reflecting optical element For example, with a resolution of 0.35 m or less, through a projection optical system PL of a predetermined reduction magnification M pi (1/4 in this embodiment) constituted by a concave mirror MR into bilateral telecentric lenses at a predetermined reduction magnification M pi (in this embodiment, 1/4). Projected onto wafer W. Here, as the projection optical system, one that projects an inverted image (inverted on the X axis) of a circuit pattern (not shown) formed on the pattern surface of the reticle R onto the wafer W is used. You. The detailed configuration of such a projection optical system PL is disclosed in detail in the above-mentioned Japanese Patent Application Laid-Open No. 5-88087, which is disclosed in Japanese Patent Application Laid-Open No. 6-30973. Therefore, further explanation is omitted here. Now, on the bottom of the reticle stage body 206, an air bearing (air bearing) supporting the own weight of the reticle stage body 206 facing the guide surface 202A of the fixed guide rail 202 is provided. Pad PDA for air bearing and pad PDB for air bearing that constrains Y-direction displacement of reticle stage body 206 facing guide surface 202 B of fixed guide rail 202 For the air bearing, which supports the weight of the reticle stage body 206 facing the surface 200A of the base structure 200 between the guide rails 202 and 204. Head PDC is fixed. Of these pads, the pad PDB for constraining displacement in the Y direction is composed of a plurality of air pads that emit pressurized air and is alternately arranged in the X direction (a direction perpendicular to the paper) to suck air. It consists of a pneumatic / vacuum combination pad (vacuum preload type air bearing) that combines multiple vacuum pads. According to this pneumatic / vacuum combi- sion-type pad, the reticle stage body is formed by the balance between the suction force (preload) of the vacuum pad section and the pressure of the air ejected from the air pad section. 206 is levitated and supported with a predetermined clearance from the guide surface. (In addition, in the case of a PDC, a PPD, a PPD, the weight of the reticle stage body 206 is Acts as a preload, and the reticle stage body 206 is moved from the guide surface by the balance between the dead weight and the pressure of the air ejected from the head PDA. In the following description, the pad is used to mean that the pad supports its own weight In this sense, the base structure of the fixed guide rail 204 at the other end in the Y direction is used. The first wafer stage body 208 and the second wafer stage The wafer stage 14 composed of a solid body 220 and a floating body is formed on the base structure 200. The first wafer stage body 208 is formed on a rectangular frame extending on the XY plane on the base structure 200. (See Fig. 3.) However, its own weight is supported by pads PDD and PDE for air bearings arranged at the four corners facing the upper surface of the base structure 200. The displacement of the first wafer stage body 208 in the Y direction (the left-right direction in the drawing) is caused by the first wafer stage body 2 facing the vertical guide surface 204 A of the fixed guide rail 204. Fixed to 0 8 Pneumatic / vacuum combination type pad restrained by PDF. Thus, the first wafer stage body 208 can be moved in a frictionless manner in the X direction by being guided by the guide surface 204 A and the surface of the base structure 200. Then, between the first wafer stage body 208 and the reticle stage body 206, a first linear motor 211 disposed along the X direction is provided. The first linear motor 21 6 is fixed to the first wafer stage body 208 side, and extends over a moving stroke in the X direction. The magnet track portion 21A includes a yoke extending in the X-axis direction and having a U-shaped cross section and a pair of magnets fixed to the upper and lower surfaces of the yoke) and a reticle stage body 20. It consists of a drive coil section 2 16 B fixed to the 6 side, and generates thrust in the X direction. That is, in the first embodiment, by driving the linear motor 2 16, for example, the reticle stage section 206 is integrally driven with the drive coil section 2 16 B toward the front of the drawing. As a result, the reaction causes the wafer stage 14 to be driven integrally with the magnet track unit 2 16 A toward the back side of the drawing (the reticle stage body 20). 6 can be independently moved in the X direction by a second linear motor 2 14 provided along the X direction.This linear motor 2 14 is fixed to the base structure 200 side, Magnet track section 2 14 A over the movement stroke of the reticle stage body 206 in the X direction (The magnet track section 2 14 A is the guide surface 200 A A U-shaped yoke fixed on the top and one fixed on the left and right inner surfaces of this yoke And of consisting of the magnet door), reticle stage body 2 0 6 It is composed of a drive coil section 2 14 B fixed to the side, and produces a thrust in the X direction. The second linear motor 214 is used for returning the reticle stage body 206 to a predetermined reset position, and has various functions. This will be described later. Further, inside the frame of the first wafer stage body 208, as shown in FIGS. 2 and 3, a wafer holder 218 for vacuum-sucking the wafer W and a fiducial mark plate FM are mounted. The second wafer stage body 220 thus held is movably held in the Y direction. FIG. 3 shows the configuration of the wafer stage body viewed on the XY plane. As shown in FIG. 2, a plurality of air bearings for supporting its own weight are provided below the second wafer stage body 220 so as to face the upper surface of the base structure 200 as shown in FIG. Pads PDI and PDG are installed. In addition, the inner surface of one of the two linear frame portions of the first wafer stage body 208 extending in the Y direction with the second wafer stage body 220 interposed therebetween is also shown in FIG. As shown in the figure, a guide surface 222 is formed with the second wafer stage body 220 for guiding in the Y direction (constraining the displacement in the X direction), and one of the second wafer stage bodies 220 is formed. A pair of pneumatic / vacuum combination pads PDH facing the guide surfaces 222 are fixed to the ends. Further, between each of the two linear frame portions of the first wafer stage body 208 extending in the Y direction and the second wafer stage body 220, as shown in FIG. 2 A pair of linear motors 240 and 242 are provided to move the wafer stage body 220 in the Y direction with respect to the first wafer stage body 208. Can be Since the drive coil portions 240 A and 242 A of the pair of linear motors 240 and 242 are fixed to both sides of the second wafer stage body 220, respectively. By subtly changing the drive amount of 242, the second wafer stage body 220 can be minutely rotated (on the order of seconds) on the surface of the base structure body 200. Here, with reference to FIG. 3, the reciprocal configuration of the reticle R and the first and second wafer stage bodies 208 and 220 on the XY plane will be further described. In FIG. 3, the movement position of reticle R in the X direction (scanning direction) in the XZ plane and the minute rotation amount (retinal error) of reticle R in the XZ plane are represented by reticle stage 2 The laser interferometers RIFX and RIF0 project a laser beam for length measurement onto a reflecting mirror CMX fixed to a part of the fine movement stage 210 provided at 06, and receive the reflected beam. You. Although not shown in either of FIGS. 2 and 3, the position of the reticle fine movement stage 210 in the Z direction (the vertical direction in the plane of FIG. 2 and the direction perpendicular to the plane of FIG. 3 in FIG. 3) is sequentially measured. A laser interferometer RIF y is also provided. Here, this laser interferometer RIF y measures the Z-direction position of the reticle fine movement stage 210, but in the wafer stage coordinate system. Since this Z-direction position corresponds to the Y-direction position, The laser interferometer RIF y is used. Therefore, in the following description, the measurement value of the laser interferometer RIF y is expressed as PY. The coordinate position of the wafer W in the XY plane is determined by a movable mirror My extending in the X-axis direction at the other end (right end) in the Y-direction on the second wafer stage body 220 for measuring the length. A laser interferometer WIF y that projects a laser beam and receives the reflected beam, and a Y-axis direction at one end in the X direction on the second wafer stage body 220 The laser interferometer WIFX, which projects a laser beam for length measurement onto the moving mirror M x extending in the direction and receives the reflected beam, is sequentially measured. Each of the interferometers WIFX and WIFy simultaneously measures the minute rotation amount (jewing error) of the second wafer stage body 220 at the same time. The illustration of both the moving mirror and the interferometer is omitted in FIG. Each of the above interferometers RIF x, RIF Θ RIF y, WIF x, WIF y is a reference for measuring the coordinate position of reticle R or wafer W with reference to base structure 200. The plane mirror and the corner prism (both not shown) are fixed to the base structure 200. By the way, one shot area SA is shown in the wafer W in FIG. 3, but in the state of FIG. 3, the center point of the shot area SA is a vertical optical axis AX ( The moment coincides exactly with the optical axis of the lens group G3 in Fig. 2; at this time, the center point of the pattern area of the reticle R also has a horizontal optical axis AX (the lens groups G1 and G2 in Fig. 2). Optical axis). In addition, in the exposure apparatus 100 of the first embodiment, between the projection optical system PL and the reticle R, via the periphery of the projection field of the projection optical system PL, the wafer W or the reference mark plate FM TTL (through-the-lens) type alignment optical system 230 that photoelectrically detects the alignment mark formed on the top, beam splitter BS, and third lens group Alignment mark on wafer W or fiducial mark plate FM is detected via G3, and reticle R is detected via beam splitter BS and second and first lens groups G2 and G1. A half TTL type alignment optical system 232 for detecting the above alignment mark is provided. In the above configuration, the total value Mr of the masses of both the reticle stage body 206 and the reticle fine movement stage 210, and the wafer stage 14, that is, the first wafer stage body 208 The ratio of the mass of both the second wafer stage body 220 to the total value Mw is set to be equal to the reduction magnification Mpi of the projection optical system PL. In the case of this embodiment, as described above, since the magnification Mpl of the projection optical system is 1/4, the mass ratio Mr / Mw is also set to 1/4. To give a specific example, it depends largely on the diameter of the wafer W used, but the total mass Mw of the wafer stage body is about 40 to 100 Kg, and the total mass of the reticle stage body M can be set to about 10 to 25 Kg. FIG. 4 shows a configuration of a control system of the exposure apparatus 100 according to the first embodiment. , Alignment control system 255, stage main control system 260, drive circuit 253, drive system 254, main scan drive system 255, drive circuit 256, etc. Here, the above components of the control system will be described together with their operations, and the detection information from the TTL alignment detection system 230 described above and the half TTL alignment detection system 23 The detection information from 2 is input to the alignment control system 259, where the wafer W, reticle R, and Reference mark board The coordinate position and displacement error of the alignment mark on the FM are determined. O The stage main control system 260 is a mini-operation (not shown) for operation. Interface, and the above-mentioned linear motors 2 1 4 and 2 16, 24, 24, 24, drive system 25 4 for driving and controlling reticle fine movement stage 210, main scanning drive system 25 5, drive circuit 25 6, drive circuit 25 3 Is done. Among them, the drive circuit 253 is composed of position information PX, PY, P P in the X direction, Y direction, and rotation (jowing) direction measured by the reticle-side interferometers RIFX, RIF Θ RIF y. The reticle fine movement stage 210 is servo-controlled based on the command information from the main control system 260, and the reticle R is minutely moved during alignment or during scanning exposure. Further, the drive system 255 is based on the position information PX (and the speed information Vx) measured by the reticle-side interferometer RIFX and the command information from the main control system 260, and the second linear motor Servo control of 2 1 4 drive. The main scanning drive circuit 255 operates mainly during scanning exposure, and is measured by the speed information VX (or position information PX) measured by the reticle side interferometer RIFX and the wafer side interferometer WIFX. While monitoring one or both of the speed information VX (or the position information PX), at least one of the absolute speeds of the reticle stage body 206 and the first wafer stage body 208 is monitored. The first linear motor 216 is servo-controlled so that it becomes equal to the speed command information from the main control system 260. The drive circuit 256 is based on the position information PX, PY, PS measured by the wafer-side interferometers WIFX, WIFy and the command information from the main control system 260, and the pair of linear motors described above. Servo control of the drive of 240 and 242 is performed. Next, the operation at the time of scanning exposure of the exposure apparatus 100 of the first embodiment configured as described above will be described. Here, the reticle alignment by the half TTL alignment detection system 232 and the global alignment of the reticle R and wafer W by the TTL alignment detection system 230 and the reference plate FM are determined. Advance preparations such as baseline measurement used shall be completed. First, in the stage main control system 260, one end in the X-axis direction of a predetermined shot area on the wafer W should be positioned in the exposure field of the projection optical system PL. A command is given to the scanning drive system 254 and the drive circuit 256 to drive the linear motor 216 and the linear motors 240, 242. As a result, the second wafer stage body 220 is moved X with the first wafer stage body 208 in the direction opposite to the reticle stage body 206 and the first wafer stage body 2 It is driven in the Y direction with respect to 08, and one end in the X axis direction of the shot area is positioned in the exposure field of the projection optical system PL. Next, the stage main control system 260 drives the second linear motor 214 via the drive system 254 to return the reticle stage body 206 to a predetermined reset position. As a result, the other end of the reticle in the X-axis direction matches the exposure field of the projection optical system PL. In this case, the second linear motor 214 was servo-controlled based on the measurement value of the reticle interferometer 250 so that the position of the reticle stage body 206 did not change in the X direction. In this state, the first linear motor 2 16 is driven to

2 ウェハステージ体 2 0 8、 2 2 0 を一体と してべ一ス構造体 2 0 0上 で単独に X方向に移動させた後、 第 2の リ ニアモータ 2 1 4のみを レチ クル用干渉計 2 5 0の計測値に基づいてサーボ制御する ことによ り、 レ チクルステージ体 2 0 6 をベース構造体 2 0 0上で単独に X方向に移動 させるよう に しても良い。 次に、 ステ—ジ主制御系 2 6 0では主走査駆動系 2 5 5 に指令を与え てリ ニアモータ 2 1 6 を駆動して当該ショ ッ 卜領域の露光を開始する。 本第 1 実施例の場合、 ウェハステージ 1 4及びレチクルステ—ジ体 2 0 6は共にベース構造体 2 0 0上でエアベア リ ング (真空軸受け) を介し て浮上支持されている ことから、 第 1 の リ ニアモータ 2 1 6の駆動コ ィ ル部 2 1 6 Bへ駆動電流を供給する と、 運動量保存則に従って第 1 ゥェ ハステージ体 2 0 8 と第 2 ウェハステージ体 2 2 0 とは一体となってベ —ス構造体 2 0 0の上面を例えば + X方向に速度 V wで移動し、 レチク ルステ—ジ体 2 0 6はベース構造体 2 0 0の上面を— X方向に速度 V r で移動する。 この場合において、 前記の如く、 レチクルステージ体 2 0 6 と レチクル微動ステージ 2 1 0 との両方の質量の合計値 M r と ウェハ ステージ 1 4の全体の質量 M wとの比が、 投影光学系 P Lの縮小倍率 1 / 4 に等し く 設定されている ことから、 運動量保存の法則によ り、 加速 時、 等速時、 減速時のいかんに拘らず、 レチクルステージ体 2 0 6 と ゥ ェハステージ 1 4 との速度比は 4 : 1 、 即ち縮小倍率 M p iの逆数に等し 〈 なる。 従って、 ウェハステージ 1 4及びレチクルステージ体 2 0 6の —方のみの速度 (又は位置) をサ―ボ制御すれば、 常に両者を確実に同 期走査する ことができる。 こ こで、 各走査速度 V w、 V r の絶対値 (ベース構造体 2 0 0に対す る速度) は、 走査露光時にウェハ W上に与えられる露光量を左右するの で、 主走査駆動系 2 5 5ではレチクルステージ体 2 0 6の X方向位置計 測用の干渉計 R I F Xか、 第 1 ウェハステージ体 2 0 8の X方向位置計 測用の干渉計 W I F xのいずれか一方から出力される速度情報をモニタ しつつ、 その速度が指定された一定値になるように第 1 のリ ニアモータ 2 1 6の駆動をサーボ制御するこ とは必要となる。 例えば、 レチクルステージ体 2 0 6 にサ一ボがなされた場合、 仮に、 レチクルステージ体 2 0 6 が振動的な動きを しても、 ウェハステージ 1 4は質量比の逆数と同 じ速度比を維持した状態でレチクルステージ体 2 0 6 と相似的な振動的な動きをする。 また、 運動量が保存されるため、 系の重心位置は常に一定であるからベース構造体 2 0 0 を揺らすことも ない。 従って、 両者の走査露光時の同期誤差は常に零となる。 このよう に してウェハ W上の一つのショ ッ 卜領域の露光が終了する と. ステージ主制御系 2 6 0では駆動回路 2 5 6 を介してリ ニアモータ 2 4 0、 2 4 2 を駆動 してウェハ Wの当該露光済みのショ ッ 卜の隣のショ ッ 卜領域を投影光学系 P Lの露光フ ィ ール ド内に位置決めする (ステツ ピ ングを行なう ) 。 この位置決め後、 ステージ主制御系 2 6 0では主走査 駆動系 2 5 5 を介してリ ニアモ一夕 2 1 6 を駆動し、 レチクルステージ 体 2 0 6 を前と反対方向 ( + X方向) に走査して当該ショ ッ 卜の露光を 開始する。 この場合、 ウェハステージ 1 4は一 X方向にレチクルステ一 ジ体 2 0 6の 1 / 4の速度で走査される。 以後、 同様に して、 ステップ ' ア ン ド · スキャ ン方式でウェハ上のシ ョ ッ 卜領域の露光が行われる。 以上説明 したように、 本第 1 実施例による と、 レチクル側のステ一ジ 体とウェハ側のステージ体との質量比 M r / M wを投影光学系 P Lの縮 小倍率 M p iと等し 〈設定するだけで、 複雑な同期制御回路等を設ける こ とな く、 また、 特に動特性に優れたステージやアクティ ブ除振装置等の 特別な除振装置を用いる ことな く 、 簡単な構成でレチクル構造体 2 0 6 とウェハステージ 1 2 とを、 運動量保存の法則に基づいて常に同期誤差 零で走査する ことができるという効果がある。 また、 レチクルステージ 体 2 0 6 と ウェハステージ 1 4 ( ウェハステージ体 2 0 8、 2 2 0 ) と が運動量保存則に従って互いに逆向きに移動するため、 ベース構造体 2 0 0 を含む装置ボディ全体の X方向に関する重心位置がほとんど変わら ず、 装置の揺れが低減される と言った効果も得られる。 と ころで、 本第 1 実施例では、 上記の如 く、 レチクルステージ体 2 0 6 と基板ステージ (ウェハステージ体 2 0 8、 2 2 0 ) との間にスキヤ ン方向 ( X方向) に延設されたリ ニアモータ 2 1 6 が配置され、 ウェハ ステージ 1 4がベース構造体 2 0 0上を非接触状態で X方向に 1 次元移 動するようにエアべァ リ ングで支持され、 レチクルステージ体 2 0 6が ベース構造体 2 0 0上を非接触状態で X方向に 1 次元移動するようにェ アベァ リ ングで支持されている。 従ってリ ニァモ一夕 2 1 6の駆動コ ィ ル部 2 1 6 Bに駆動電流が供給 されている間は、 運動量保存則に従ってレチクル R とウェハ Wの X方向 の相対位置関係は制御されたものとなる。 と ころが、 リ ニアモータ 2 1 6への給電が断たれると レチクルステージ体 2 0 6 と ウェハステージ 1 4 との X方向の相対位置関係を保つ強制力が失われる ことになる。 このため、 リ ニアモータ 2 1 6 への給電が断たれたときに生じる露光 装置内部の振動源 (他のモータ等) からの振動、 露光装置外部の空調機 器等がらの振動、 露光装置を設置する床面の振動、 或いは露光装置全体 の僅かな傾斜等によって、 レチクルステージ体 2 0 6 とウェハステージ 1 4 との X方向の相対位置関係が徐々にずれて く る可能性がある。 この場合において、 リ ニアモータ 2 1 6のコイル配置、 各コ イルの卷 線構造、 駆動電流の供給制御等を工夫 して、 レチクルステージ体 2 0 6 とウェハステージ 1 4 との X方向の相対変位を零に保つよう なサ一ボ制 御が可能な リ ニアモータ とする こ ともできる。 この場合はリ ニアモータ 2 1 6への供給電流を制御するだけで、 容易にレチクル R と ウェハ Wと の X方向の相対位置関係を静止させる ことができる。 しか しながらその 場合でも、 各種振動や露光装置の傾斜等によってレチクルステージ体 2 0 6 とウェハステージ 1 4 とが一体となってベース構造体 2 0 0上を X 方向にずれる可能性がある。 いずれの場合も、 レチクルステージ体 2 0 6はウェハステージ 1 4が ベース構造体 2 0 0に対してずれて しまう ことに違いはな く、 このこと はベース構造体 2 0 0に対して固定された照明系 2 1 2の光軸 (又は照 明光束) と、 走査露光開始時に設定されるべき レチクル R との X方向の 相対位置関係が変化する ことを意味し、 ステップ &スキャ ン方式の露光 シーケンスに重大な影響を与える ことになる。 このような不都合を解消すべく 、 第 2のリ ニアモータ 2 1 4が機能す る。 すなわち、 本第 1 実施例の露光装置 1 0 0では、 運動量保存則に従 つた速度比でレチクルステージ体 2 0 6 と ウェハステージ 1 4 (ウェハ ステージ体 2 0 8、 2 2 0 ) との相対位置関係を制御する第 1 のリ ニア モータ 2 1 6の他に、 ベース構造体 2 0 0に対する レチクルステージ体 2 0 6の絶対位置を制御する第 2の リ ニアモ—夕 2 1 4 が設けられてい る ことから、 走査露光時に運動量保存則に従ってレチクルステージ体 2 0 6 とウェアステージ 1 4 ( ウェハステージ体 2 0 8、 2 2 0 ) とを逆 向きに移動させる ときは第 2のリ ニアモータ 2 1 4の駆動コ イル部 2 1 4 Bの給電端子を開放して無負荷状態に し、 一方、 レチクルステージ体 2 0 6の絶対位置を制御する ときは、 ベース構造体 2 0 0に対する レチ クルステージ体 2 0 6の X方向位置計測用の干渉計 R I F Xからの位置 情報や速度情報に基づいて第 2のリ ニアモ—夕 2 1 4 をサ―ボ制御する ことができる。 従って、 各リ ニアモータを S & S方式のウェハ露光シーケンスに応じ て連携制御する ことによ り、 照明光束に対する レチクル Rの位置を常に 正確に管理する ことが可能となる。 さ らに、 露光処理が完了 した後のレチクル R、 ウェハ Wのべ一ス構造 体 2 0 0に対する位置関係を露光処理開始時の位置関係から変化しない よう にできるため、 レチクル交換やウェハ交換の際の自動搬送機構のァ —厶等との間での受渡し位置のずれが防止されるといった利点もある。 なお、 上記第 1 実施例では投影光学系と してレチクル Rのパターンの 倒立像をウェハ W上に投影する倒立系の光学系を使用する場合を例示し たが、 上下対称の回路パターンを露光する場合等には、 回路パターンの 正立像を感光基板上に結像する正立系の光学系を投影光学系と して使用 する ことは可能である。 さ らに、 上記第 1 実施例では、 投影光学系の縮小倍率が 1 / 4である 場合を例示したが、 投影光学系の縮小倍率は何倍であつてもかまわない 例えば、 縮小倍率が 1 倍 (等倍) であっても、 本発明のメ リ ッ 卜は大き なものがある。 すなわち、 本発明によれば、 運動量が保存されるので、 ステージの移動によ り系の重心位置が移動する ことな く、 ステージの移 動による反力でボディ が揺れる ことがないので、 アクティ ブ除振装置等 の高価な除振装置等が不要になり、 しかも一方のステージが振動的な動 きを しても他方のステージがこれに応じて同様の振動的な動きを し、 同 期誤差が生じる ことがないからである。 (2) After moving the wafer stage bodies 208 and 220 together in the X direction on the base structure body 200 alone, only the second linear motor 2 14 interferes with the reticle. Servo control based on a total of 250 measured values The tickle stage body 206 may be moved alone in the X direction on the base structure 200. Next, the stage main control system 260 gives a command to the main scanning drive system 255 to drive the linear motor 216 to start exposure of the shot area. In the case of the first embodiment, the wafer stage 14 and the reticle stage body 206 are both supported on the base structure 200 via air bearings (vacuum bearings). When a driving current is supplied to the driving coil section 2 16 B of the linear motor 2 16 of the first stage, the first wafer stage body 208 and the second wafer stage body 220 are integrated according to the law of conservation of momentum. As a result, the top surface of the base structure 200 is moved at a speed Vw in the + X direction, for example, and the reticle stage body 206 is moved along the top surface of the base structure 200 in a speed V in the X direction. Move with r. In this case, as described above, the ratio of the total mass M r of both the reticle stage body 206 and the reticle fine movement stage 210 to the total mass M w of the wafer stage 14 is determined by the projection optical system. The reticle stage body 206 and the wafer stage are set according to the law of conservation of momentum, regardless of whether the vehicle is accelerating, at a constant speed, or decelerating, because it is set to be equal to 1/4 of the PL reduction magnification. The speed ratio to 14 is 4: 1, which is equal to the reciprocal of the reduction factor M pi. Therefore, if only the speed (or position) of one of the wafer stage 14 and the reticle stage body 206 is servo-controlled, the two can always be reliably and synchronously scanned. Here, the absolute values of the respective scanning speeds Vw and Vr (the speeds with respect to the base structure 200) determine the amount of exposure given on the wafer W during scanning exposure. In the case of 255, the interferometer RIFX for measuring the reticle stage body 206 in the X direction or the X direction position meter of the first wafer stage body 208 While monitoring the speed information output from one of the measurement interferometers WIFx, the servo of the drive of the first linear motor 2 16 is controlled so that the speed becomes a specified constant value. Is required. For example, if the reticle stage body 206 is subjected to servo, even if the reticle stage body 206 vibrates, the wafer stage 14 has the same speed ratio as the reciprocal of the mass ratio. The reticle stage body 206 performs a vibrating movement similar to that of the reticle stage body 206 while maintaining the state. In addition, since the momentum is conserved, the position of the center of gravity of the system is always constant, so that the base structure 200 does not shake. Therefore, the synchronization error at the time of both scanning exposures is always zero. Thus, when the exposure of one shot area on the wafer W is completed. The stage main control system 260 drives the linear motors 240, 242 via the drive circuit 256. Then, a shot area adjacent to the exposed shot on the wafer W is positioned in the exposure field of the projection optical system PL (stepping is performed). After this positioning, the stage main control system 260 drives the linear motor 216 via the main scanning drive system 255 to move the reticle stage body 206 in the opposite direction (+ X direction) from the front. Scanning starts exposure of the shot. In this case, the wafer stage 14 is scanned in the X direction at a speed of 1/4 of the reticle stage body 206. Thereafter, similarly, the exposure of the shot area on the wafer is performed by the step-and-scan method. As described above, according to the first embodiment, the mass ratio M r / M w between the reticle-side stage body and the wafer-side stage body is reduced by the reduction of the projection optical system PL. Equal to the small magnification M pi <Just by setting, there is no need to provide a complicated synchronization control circuit, etc., and use a special vibration isolation device such as a stage with excellent dynamic characteristics and an active vibration isolation device In addition, the reticle structure 206 and the wafer stage 12 can be always scanned with a synchronization error of zero based on the law of conservation of momentum with a simple configuration. Also, since the reticle stage body 206 and the wafer stage 14 (wafer stage bodies 208, 220) move in opposite directions according to the law of conservation of momentum, the entire apparatus body including the base structure 200 is moved. The position of the center of gravity with respect to the X direction hardly changes, and the effect of reducing the shaking of the device can be obtained. In the first embodiment, as described above, the reticle stage 206 and the substrate stage (wafer stage 208, 220) extend in the scanning direction (X direction) as described above. A linear motor 2 16 is arranged, and the wafer stage 14 is supported by air bearing so as to move one-dimensionally in the X direction in a non-contact state on the base structure 200, and a reticle stage. The body 206 is supported by air bearing so as to move one-dimensionally in the X direction on the base structure 200 in a non-contact state. Therefore, while the drive current is being supplied to the drive coil section 21 B of the linear camera, the relative positional relationship between the reticle R and the wafer W in the X direction is controlled according to the law of conservation of momentum. Becomes However, when the power supply to the linear motor 211 is cut off, the forcing force for maintaining the relative positional relationship between the reticle stage body 206 and the wafer stage 14 in the X direction is lost. For this reason, vibration from a vibration source (other motor, etc.) inside the exposure apparatus that occurs when power supply to the linear motor 211 is cut off, and an air conditioner outside the exposure apparatus The relative positional relationship between the reticle stage body 206 and the wafer stage 14 in the X direction is gradually shifted due to vibration of the equipment, vibration of the floor on which the exposure apparatus is installed, or slight inclination of the entire exposure apparatus. There is a possibility that it will come. In this case, the relative displacement of the reticle stage body 206 and the wafer stage 14 in the X direction is devised by devising the coil arrangement of the linear motor 216, the winding structure of each coil, and the control of the drive current supply. It is also possible to use a linear motor that can perform servo control so as to maintain zero. In this case, the relative positional relationship between the reticle R and the wafer W in the X direction can be easily stopped simply by controlling the supply current to the linear motor 216. However, even in such a case, there is a possibility that the reticle stage body 206 and the wafer stage 14 are integrally moved on the base structure 200 in the X direction due to various vibrations, inclination of the exposure apparatus, and the like. In either case, there is no difference that the reticle stage body 206 shifts the wafer stage 14 with respect to the base structure 200, which is fixed with respect to the base structure 200. Step and scan exposure means that the relative positional relationship in the X direction between the optical axis (or illuminating light flux) of the illumination system 211 and the reticle R to be set at the start of scanning exposure changes. This will have a significant effect on the sequence. The second linear motor 214 functions to solve such inconvenience. That is, in the exposure apparatus 100 of the first embodiment, the relative positions of the reticle stage body 206 and the wafer stage 14 (wafer stage bodies 208, 220) are controlled at a speed ratio according to the law of conservation of momentum. In addition to the first linear motor 2 16 for controlling the positional relationship, a reticle stage body for the base structure 200 Since a second linear camera 2 14 for controlling the absolute position of 206 is provided, the reticle stage 206 and wear stage 14 (wafer stage 2) are used in accordance with the law of conservation of momentum during scanning exposure. 0 8 and 2 20) in the opposite direction, the power supply terminal of the drive coil section 2 14 B of the second linear motor 2 14 is opened to make it no load, while the reticle stage When controlling the absolute position of the body 206, the second position is controlled based on the position information and speed information from the interferometer RIFX for measuring the X direction position of the reticle stage body 206 with respect to the base structure 200. It is possible to perform servo control of the linear camera. Therefore, the position of the reticle R with respect to the illuminating light beam can always be managed accurately by controlling each linear motor in cooperation with the S & S type wafer exposure sequence. Furthermore, since the positional relationship between the reticle R and the wafer W with respect to the base structure 200 after the completion of the exposure processing can be kept from the positional relationship at the start of the exposure processing, the reticle exchange and the wafer exchange can be performed. In this case, there is also an advantage that a transfer position between the arm and the like of the automatic transport mechanism is prevented from being shifted. In the first embodiment, an example in which an inverted optical system that projects an inverted image of the pattern of the reticle R onto the wafer W is used as the projection optical system, but a vertically symmetric circuit pattern is exposed. In such a case, an erecting optical system that forms an erect image of the circuit pattern on the photosensitive substrate can be used as the projection optical system. Further, in the first embodiment, the reduction magnification of the projection optical system is 1/4. Although the case has been exemplified, the reduction ratio of the projection optical system may be any number. For example, even if the reduction ratio is 1 (1 ×), the advantages of the present invention are large. . That is, according to the present invention, since the momentum is conserved, the position of the center of gravity of the system does not move due to the movement of the stage, and the body does not shake due to the reaction force due to the movement of the stage. An expensive vibration isolator such as a vibration isolator is not required, and even if one stage vibrates, the other stage performs the same vibratory motion accordingly, resulting in a synchronization error. This is because no problem occurs.

《第 2実施例》 << 2nd Example >>

次に、 本発明の第 2実施例を図 5 に基づいて説明する。 こ こで、 前述 した第 1 実施例と同一又は同等の構成部分については同一の符号を用い ると共にその説明を簡略に し若し く は省略する。 この第 2実施例は、 図 5 に示されるよう に、 リ ニアモータ 2 1 4 に機能的に関連して発電用コ ィ ル 2 5 7 と、 そのコ イ ル 2 5 7 からの電流を消費する回生制動用の負 荷回路 2 5 8 とが併設されている点に特徴を有する。 制御系のその他の 構成及びその他の装置構成等は前述した第 1 実施例と同一である。 この第 2実施例では、 第 2のリ ニアモータ 2 1 4 を利用 して、 走査露 光時のレチクルステージ体 2 0 6 とウェハステージ 1 4 (ウェハステ一 ジ体 2 0 8、 2 2 0 ) との速度比を、 例えば ± 0 . 1 %程度の範囲内で P - P . mオーダ—の分解能で微調整する回生制御回路、 具体的には図 5 中の発電用コ イ ル 2 5 7 と負荷回路 2 5 8 とを設け、 走査方向に関す る転写倍率を微小変化 (ウェハ W上での走査方向の設計寸法を 3 5 m m と したとき、 それを全体と して数百 n m程度だけ伸縮) させる。 これを更に詳述する と、 発電用コ イ ル 2 5 7は第 2の リ ニアモータ 2 1 4内に特別な発電用コ イ ルを設けるか、 駆動用のコ イ ルを発電用に兼 用するか して構成され、 第 1 のリ ニアモータ 2 1 6でレチクルステージ と ウェハステージとを逆向きに移動させている間、 その発電用コ イ ルの 端子に負荷回路 2 5 8 (適当な負荷抵抗器を含む) を接続して回生制御 を行う ことで、 レチクルステージ体 2 0 6の X方向の動負荷を増大させ. レチクルステージ体 2 0 6 と ウェハステージ 1 4の速度比を微少量変化 させる。 なお、 回生制動量の制御のために、 負荷回路 2 5 8は発電用コ イ ル 2 5 7 からな電流を高速スィ ツチング素子等を介して負荷抵抗器に流すよ う に構成され、 スィ ツチング素子のオン · オフの周波数やオン時間と才 フ時間のデューティ 比等を広範囲に可変させるようにすればよい。 ここでは、 速度比 V w / V r を縮小倍率 M p iと精密に微調整するため に、 第 2のリ ニアモータ 2 1 4の駆動コ イ ル部 2 1 4 B と一体になった 発電用コ イ ル 2 5 7 (図 5参照) と負荷回路 2 5 8 を利用 して、 レチク ルステージ体 2 0 6の移動方向に対して動的負荷を加えるように制御す る。 その負荷回路 2 5 8は発電用コ イル 2 5 7 に対して可変負荷抵抗器 と して作用 し、 発電用コ イル 2 5 7 から取り出す電流を、 主走査駆動回 路 2 5 5 からの制御指令に応じてほぼ連続的に変化させる機能を有する, 走査露光の間、 レチクルステージ体 2 0 6は速度 V rで移動しよう と するが、 発電用コ イ ル 2 5 7の端子に適当な負荷抵抗が接続されている と、 その負荷抵抗器で消費されるエネルギーに対応した運動量がレチク ルステージ体 2 0 6 に加算される こ とになる。 これはレチクルステージ 体 2 0 6の見かけ上の質量 M 「 を微小量だけ増加させる こ とに相当する このため、 ウェハステージ 1 4 と レチクルステージ体 2 0 6 との速度比 V w/ V rが微調整される。 この場合、 レチクルステージ体 2 0 6の見かけ上の質量は増大する方 向に しか作用 しないので、 質量比 M r /M wが大き く なって速度比 V w /V rが、 M pK ( V w/V r ) の方向に調整される。 このため静止状 態での質量比 M r / M wが、 縮小倍率 M ρΠこ対してわずかに小さ 〈 なる ように各ステージ体の質量を設定しておき、 走査露光時には常に回生制 動量を適度に調整する ことで速度比と縮小倍率とを一致させればよい。 Next, a second embodiment of the present invention will be described with reference to FIG. Here, the same reference numerals are used for the same or equivalent components as in the first embodiment described above, and the description thereof is simplified or omitted. As shown in FIG. 5, the second embodiment consumes a current from the power generation coil 2557 and the coil 2557 in functional relation with the linear motor 214. It is characterized in that a regenerative braking load circuit 258 is provided. Other configurations of the control system and other device configurations are the same as those of the first embodiment. In the second embodiment, the reticle stage 206 and the wafer stage 14 (wafer stage bodies 208, 220) at the time of scanning exposure are utilized by using the second linear motor 214. The regenerative control circuit that finely adjusts the speed ratio within a range of, for example, about ± 0.1% with a resolution of the order P-P.m, specifically, the power generation coil 2557 shown in Fig. 5 With a load circuit 258, the transfer magnification in the scanning direction is slightly changed. (When the design dimension in the scanning direction on the wafer W is 35 mm, the entire circuit expands and contracts by several hundred nm.) ) In more detail, the power generation coil 257 may be provided with a special power generation coil in the second linear motor 221 or the driving coil may be used for power generation. While the reticle stage and the wafer stage are moved in opposite directions by the first linear motor 216, the load circuit 258 (appropriate load) is connected to the terminal of the power generation coil. (Including a resistor) to perform regenerative control to increase the dynamic load in the X direction of reticle stage body 206. The speed ratio between reticle stage body 206 and wafer stage 14 is slightly changed. Let it. In order to control the amount of regenerative braking, the load circuit 258 is configured so that the current from the power generating coil 257 flows through the load resistor via a high-speed switching element or the like. The on / off frequency of the element and the duty ratio of the on-time and the expiration time can be varied over a wide range. Here, in order to finely and finely adjust the speed ratio Vw / Vr to the reduction ratio Mpi, the power generation unit integrated with the drive coil unit 2 14 B of the second linear motor 2 14 The control is performed so that a dynamic load is applied to the moving direction of the reticle stage body 206 using the coil 257 (see Fig. 5) and the load circuit 258. The load circuit 258 acts as a variable load resistor for the power generation coil 257, and the current extracted from the power generation coil 257 is controlled by the main scanning drive circuit 255. It has the function of changing almost continuously according to the command. During scanning exposure, the reticle stage body 206 tries to move at the speed Vr, but an appropriate load is applied to the terminal of the power generation coil 255. If a resistor is connected, the momentum corresponding to the energy consumed by the load resistor will be added to the reticle stage 206. This is a reticle stage This is equivalent to increasing the apparent mass M of the body 206 by a very small amount. Therefore, the speed ratio V w / V r between the wafer stage 14 and the reticle stage body 206 is finely adjusted. In this case, since the apparent mass of the reticle stage body 206 acts only in the increasing direction, the mass ratio M r / M w increases, and the speed ratio V w / V r becomes M pK ( V w / V r) The weight of each stage is set so that the mass ratio M r / M w in the stationary state is slightly smaller than the reduction ratio M ρ In addition, the speed ratio and the reduction ratio may be made to match by always adjusting the regenerative damping amount appropriately during scanning exposure.

—方、 運動量保存則に従ってウェハステージ 1 4 と レチクルステージ 体 2 0 6 とを互いに逆向きに走査移動させている ときに、 第 2の リ ニア モータ 2 1 4の駆動コ イ ル部 2 1 4 Βに給電してレチクルステージ体 2 0 6の駆動に併用する と、 レチクルステージ体 2 0 6の見かけ上の動的 質量をわずかに小さ く する ことができるので、 速度比 V w/V 「 を M pl > ( V w/V r ) の方向に調整する こ とも可能である。 以上説明 した本第 2実施例による と、 走査露光時のレチクル R と ゥェ ハ Wとの走査速度比が回生制動量 (発電用コ イ ルからの電流値) の制御 によって極めて容易に微調整できる ことから、 レチクル R とウェハ と の速度比を干渉計の計測結果から検出 し、 その検出値が予め設定された 値になるように回生制動量をフ ィ — ドバッ グ制御すれば、 走査方向に関 する転写倍率を一律に微調整できるだけでな く、 ウェハ W上のショ ッ ト 領域の走査開始部分と終了部分との速度比と、 ショ ッ ト領域の中央部分 の速度比とを微妙に変える こ とで、 転写歪み (ディ ス ト ーショ ン) を調 整することもできる。 なお、 上記第 1 、 第 2実施例では、 レチクルステージ体 2 0 6 をべ一 ス構造体 2 0 0上で単独にスキャ ン方向に移動させるためにリニアモ一 タ 2 1 4 を設けたが、 これに代えてあるいはこれと共に第 1 、 第 2 ゥェ ハステージ体 2 0 8、 2 2 0の X方向の位置を確実に静止させたり、 第 1 、 第 2 ウェハステージ体 2 0 8、 2 2 0 をベース構造体 2 0 0上で単 独に移動させた りするために、 ベース構造体 2 0 0 と第 1 ウェハステー ジ体 2 0 8 との間に X方向の推力を発生する第 3のリ ニアモータを設け. ウェハ用干渉計 2 5 2 ( W I F X ) の計測値に基づいてその第 3 リ ニア モータをサ一ボ制御するようにしてもよい。 次に、 上記第 2実施例の装置に、 不図示の第 3のリニアモータを追加 した場合について、 レチクル Rのパターン領域をウェハ W上のショ ッ 卜 領域とをァライ メ ン 卜 して走査露光する場合の一連のシーケンスを説明 する。 When the wafer stage 14 and the reticle stage body 206 are moved by scanning in opposite directions according to the law of conservation of momentum, the driving coil section 2 14 of the second linear motor 2 14 When the power is supplied to Β and used to drive the reticle stage body 206, the apparent dynamic mass of the reticle stage body 206 can be slightly reduced, so that the speed ratio V w / V “ It is also possible to adjust in the direction of M pl> (V w / V r) According to the second embodiment described above, the scanning speed ratio between the reticle R and the wafer W during scanning exposure is regenerated. Fine adjustment can be made very easily by controlling the braking amount (current value from the power generation coil). The speed ratio between the reticle R and the wafer is detected from the measurement result of the interferometer, and the detected value is set in advance. The regenerative braking amount so that By controlling this, not only can the transfer magnification in the scanning direction be finely adjusted uniformly, but also the speed ratio between the scanning start and end portions of the shot area on the wafer W and the center of the shot area can be adjusted. The transfer distortion (distortion) is adjusted by subtly changing the speed ratio. Can also be adjusted. In the first and second embodiments, the linear motor 2 14 is provided to move the reticle stage body 206 independently in the scanning direction on the base structure 200. Alternatively or together with this, the X and Y positions of the first and second wafer stage bodies 208 and 220 can be reliably stopped, or the first and second wafer stage bodies 208 and 22 can be stopped. In order to move the first wafer stage body 208 independently on the base structure body 200, a third thrust force in the X direction is generated between the base structure body 200 and the first wafer stage body 208. A linear motor may be provided. The third linear motor may be subjected to servo control based on the measurement value of the wafer interferometer 25 2 (WIFX). Next, in the case where a third linear motor (not shown) is added to the apparatus of the second embodiment, the pattern area of the reticle R is aligned with the shot area on the wafer W and scanning exposure is performed. A series of sequences in the case of performing is described.

( 1 ) レチクルステージ体を口一ディ ング位置に移動させ、 レチクル R をステージ上に設置する。 このとき ウェハステージ 1 4は、 レチクルス テージ体の移動に伴う運動量保存則に従って逆向きに移動させてもよい し、 第 3のリ ニアモ一タをサーボ制御 して強制的に所定位置に静止させ ておいてもよい。 (1) Move the reticle stage to the mouthing position, and place the reticle R on the stage. At this time, the wafer stage 14 may be moved in the opposite direction in accordance with the law of conservation of momentum accompanying the movement of the reticle stage body, or the third linear motor may be forcibly stopped at a predetermined position by servo-controlling the third linear motor. You may leave.

( 2 ) レチクルステージ体 2 0 6 とウェハステージ体 2 2 0 とが投影光 学系の像視野に関して所定の位置に設定されるように各ステージ体 2 0 6、 2 0 8、 2 2 0 を移動させ、 ウェハステージ体 2 2 0上に固定され た基準マーク と レチクル R上のァライ メ ン 卜マーク とを投影光学系 P L を通してァライ メ ン 卜検出系 2 3 2で相互に光電検出 し、 ウェハステ一 ジ体 2 2 0の移動座標系に対してレチクル Rが X、 Y、 0の各方向に整 合されるよう にレチクルステージ体 2 0 6上の微動ステージ 2 1 0 を制 御する。 レチクル Rがウェハステージ体 2 2 0の移動座標系に対して整 合された時点で、 レチクル用干渉計 2 5 0からの X、 Y計測値と、 ゥェ ハ用干渉計 2 5 2 からの X、 Y計測値とを 1 次整合達成位置と して記憶 する。 以後、 その位置関係がただちに再現されるよう に管理される。 (2) Each stage body 206, 208, 220 is set so that the reticle stage body 206 and the wafer stage body 220 are set at predetermined positions with respect to the image field of the projection optical system. Moved and fixed on the wafer stage body 220 The reference mark and the alignment mark on the reticle R are mutually photoelectrically detected by the alignment detection system 232 through the projection optical system PL, and are compared with the moving coordinate system of the wafer stage body 220. The fine movement stage 210 on the reticle stage body 206 is controlled so that the reticle R is aligned in the X, Y, and 0 directions. When the reticle R is aligned with the moving coordinate system of the wafer stage body 220, the X and Y measurement values from the reticle interferometer 250 and the Store the X and Y measurement values as the primary alignment achievement position. Thereafter, the positional relationship is managed so as to be immediately reproduced.

( 3 ) ウェハ Wを ウェハステージ体 2 2 0上に載置するために、 ウェハ ステージ体 2 2 0 を所定のローデイ ング位置に移動させる。 その後、 ゥ ェハ W上のい く つかのショ ッ 卜領域に付随して形成されたァライ メ ン 卜 マークの各々が投影光学系 P Lの視野内に次々に配置されるようにゥェ ハステージ体 2 2 0 を移動させ、 各ァライ メ ン 卜マークを投影光学系 P L を介してァライ メ ン 卜検出系 2 3 0で順次検出する。 その検出結果に 基づいて、 ウェハ W上のショ ッ 卜領域の配置座標系と レチクル Rのパタ —ン領域との相対位置関係 ( X、 Y、 0方向) が決定される。 (3) In order to place the wafer W on the wafer stage body 220, the wafer stage body 220 is moved to a predetermined loading position. After that, the wafer stage is arranged so that each of the alignment marks formed along with several shot areas on the wafer W are arranged one after another in the field of view of the projection optical system PL. The body 220 is moved, and each alignment mark is sequentially detected by the alignment detection system 230 via the projection optical system PL. Based on the detection result, the relative positional relationship (X, Y, 0 directions) between the arrangement coordinate system of the shot area on the wafer W and the pattern area of the reticle R is determined.

( 4 ) 決定された位置関係のうち X方向に位置ずれが生じている ときは, 第 3のリ ニアモータを駆動してウェハステージ 1 4がべ一ス構造体に対 して変位しないようにサーボロ ッ クさせた状態で、 第 1 のリ ニアモータ 2 1 6 を駆動させてレチクルステージ体 2 0 6 をウェハステージ 1 4に 対して X方向に微動させる。 またウェハ W上のショ ッ ト配列座標系と レ チクル Rのパターン領域との Υ方向の相対位置誤差は、 ウェハステージ 体 2 2 0か、 レチクルステ一ジ体 2 0 6上の微動ステージ 2 1 0によつ て補正され、 Θ方向の相対位置誤差はリ ニアモ一夕 2 4 0、 2 4 2 によ る ウェハステージ体 2 2 0の微小回転によ り補正される。 なお、 ウェハ ステージ体 2 2 0上に 0ステージを別に設けても良い。 (4) If the determined positional relationship is misaligned in the X direction, the third linear motor is driven to move the wafer stage 14 so that the wafer stage 14 is not displaced with respect to the base structure. In this state, the first linear motor 2 16 is driven to move the reticle stage body 206 slightly in the X direction with respect to the wafer stage 14. The relative positional error between the shot array coordinate system on the wafer W and the pattern area of the reticle R in the vertical direction is either the wafer stage body 220 or the fine movement stage 210 on the reticle stage body 206. And the relative position error in the Θ direction is calculated as follows: It is corrected by the minute rotation of the wafer stage body 220. It should be noted that a zero stage may be separately provided on the wafer stage body 220.

( 5 ) こう してレチクル Rのパター ン領域とウェハ W上のショ ッ 卜配列 座標系とが X、 Y、 0方向に関して精密に整合された時点で、 レチクル ステージ体 2 0 6 とウェハステージ体 2 2 0 との X、 Υ方向の相対位置 関係を 2次整合達成位置と して干渉計から読み取って記憶する。 この 2 次整合達成位置は、 そのウェハ Wを露光処理している間の各ステージ体 の移動位置の管理の基準と して利用される。 (5) When the pattern area of reticle R and the coordinate system of the shot array on wafer W are precisely aligned in the X, Y, and 0 directions, reticle stage 206 and wafer stage The relative position relationship in the X and Υ directions with 220 is read from the interferometer and stored as the position where secondary alignment is achieved. The position at which the secondary alignment is achieved is used as a reference for managing the movement position of each stage during the exposure processing of the wafer W.

( 6 ) 次に、 レチクル R上のパターン領域が照明光束によって照射開始 される位置に く るようにレチクルステージ体 2 0 6 を X方向に位置付け るとともに、 ウェハ W上の 1 つのショ ッ 卜領域が露光開始される位置に < るようにウェハステージ 1 4 を X方向に位置付ける。 (6) Next, the reticle stage body 206 is positioned in the X direction so that the pattern area on the reticle R comes to a position where irradiation by the illumination light beam is started, and one shot area on the wafer W is placed. The wafer stage 14 is positioned in the X direction so that the position of the wafer stage 14 starts exposure.

( ) そ して、 第 1 のリニアモータ 2 1 6 を駆動し、 運動量保存則に従 つてレチクルステージ体 2 0 6 とウェハステージ 1 4 とを投影光学系 Ρ Lの結像倍率 M p iに対応した所定の速度比で逆向きに移動させる。 この 際、 走査方向に関する転写倍率の微調整は両ステージ間の速度比変動の 許容範囲内への抑制が必要とされる場合は、 速度比変化 (又は相対位置 関係の変化立) の精密な計測結果に基づいて第 2のリ ニアモータ 2 1 4、 第 3のリ ニアモータを積極的に制御 し、 レチクルステージ体 2 0 6又は ウェハステージ 1 4の見かけ上の動的質量を連続的に微調整すればよい c () Then, the first linear motor 216 is driven, and the reticle stage body 206 and the wafer stage 14 are made to correspond to the image forming magnification Mpi of the projection optical system Ρ L according to the law of conservation of momentum. It is moved in the opposite direction at the predetermined speed ratio. In this case, fine adjustment of the transfer magnification in the scanning direction requires precise measurement of the change in the speed ratio (or the change in the relative positional relationship) if it is necessary to suppress the change in the speed ratio between the two stages within the allowable range. Actively control the second linear motor 214 and the third linear motor based on the results to continuously fine-tune the apparent dynamic mass of the reticle stage body 206 or wafer stage 14. Good c

《変形例》 《Modification》

次に、 変形例を図 6 A、 図 6 Bに基づいて説明する。 この変形例の露光装置は、 感光基板と してのウェハ Wのみでな く、 マ スク と してのレチクル Rがレチクルステージ 1 6上に水平に保持されて いる点に特徴を有する。 この露光装置は、 定盤 1 2上にエア一ベア リ ング (空気軸受け) 1 3 を介して浮上支持されたレチクルステージ 1 6及び基板ステージ 1 4 と. 回路パターンを縮小投影する反射光学系から成る投影光学系 P L と、 光 源 2 0 とを備えている。 この変形例の露光装置においては、 基板ステージ 1 4は定盤 1 2上に 浮上支持され X軸方向に移動可能な第 1 ステージ 1 4 Aと、 この第 1 ス テージ 1 4 A上を リ ニアモータによって Y軸方向に駆動される第 2ステ —ジ 1 4 B とを有している。 この第 2ステージ 1 4 B上にウェハ Wが保 持されている。 レチクルステージ 1 6は、 図 6 B に示されるように、 第 1 ステージ 1 4 Aを跨いだ状態で配置されてお り、 両ステージ 1 6 、 1 4 A間には、 コ イル 1 8 A とマグネッ 卜 1 8 B とから成る リ ニアモ - 夕 1 8 、 1 8が 介装されている。 光源 2 0 からの露光光が不図示の照明光学系を介してレチクル R を下 方から照明する と、 細長い照明領域 (投影光学系の露光フ ィ ール ドに対 応) 内の回路パターンの像が投影光学系 P L を介してウェハ W上に縮小Next, a modified example will be described with reference to FIGS. 6A and 6B. The exposure apparatus of this modification is characterized in that not only a wafer W as a photosensitive substrate but also a reticle R as a mask is horizontally held on a reticle stage 16. This exposure apparatus is composed of a reticle stage 16 and a substrate stage 14 which are supported by air bearing (air bearings) 13 on a surface plate 12 and a reflection optical system for reducing and projecting a circuit pattern. And a light source 20. In the exposure apparatus of this modified example, the substrate stage 14 is a first stage 14 A which is supported by floating on the surface plate 12 and is movable in the X-axis direction, and a linear motor is mounted on the first stage 14 A. And a second stage 14 B driven in the Y-axis direction. The wafer W is held on the second stage 14B. As shown in FIG. 6B, reticle stage 16 is arranged so as to straddle first stage 14 A, and between both stages 16 and 14 A, coil 18 A and Linimo-evenings 18 and 18 consisting of magnets 18B are interposed. When the exposure light from the light source 20 illuminates the reticle R from below through an illumination optical system (not shown), the circuit pattern in the elongated illumination area (corresponding to the exposure field of the projection optical system) is formed. Image reduced on wafer W via projection optics PL

T又京ンされる。 従って、 この変形例の場合も、 レチクルステージ 1 6 と基板ステージ 1 4の質量の比を投影光学系 P Lの縮小倍率 M p iと同一に設定しておけ ば、 上記各実施例と同様に、 両ステージ 1 6、 1 4の同期誤差が常に零 で回路パターンの走査露光が行われ。 同様の効果が得られる。 なお、 上記第 1 、 第 2実施例では感光基板ば基板ステージ上に水平に 保持される場合、 すなわち横置きの基板ステージを使用する場合を例示 したが、 感光基板が基板ステージに垂直に保持される、 すなわち縦置き の基板ステージを使用する露光装置に本発明を適用する ことは可能であ る o また、 上記第 1 、 第 2実施例では、 第 2ステージを非走査方向に駆動 する駆動手段と してリ ニアモータを使用する場合を例示したが、 本発明 がこれに限定される ことはな く、 送りねじ機構を用いて第 2 ステージを 非走査方向に駆動するよう な構成に しても良い。 以上説明 したように、 本発明によれば、 単純な構成で、 装置を構成す る構造物に発生する応力を低減し、 装置全体の傾きや揺れを抑え、 しか もマスクステージと基板ステージとの同期性能の向上を図る ことができ る という従来にない優れた効果がある。 It is T again. Therefore, in the case of this modification as well, if the mass ratio of the reticle stage 16 and the substrate stage 14 is set to be the same as the reduction magnification M pi of the projection optical system PL, as in each of the above embodiments, Scanning exposure of the circuit pattern is performed with the synchronization error of stages 16 and 14 always being zero. Similar effects can be obtained. In the first and second embodiments, the case where the photosensitive substrate is held horizontally on the substrate stage, that is, the case where a horizontal substrate stage is used has been exemplified, but the photosensitive substrate is held vertically on the substrate stage. That is, the present invention can be applied to an exposure apparatus that uses a vertically placed substrate stage.o In the first and second embodiments, a driving unit that drives the second stage in the non-scanning direction As an example, a case where a linear motor is used has been described, but the present invention is not limited to this, and a configuration may be used in which the second stage is driven in the non-scanning direction using a feed screw mechanism. good. As described above, according to the present invention, with a simple configuration, the stress generated in the structure constituting the apparatus is reduced, the inclination and the sway of the entire apparatus are suppressed, and the mask stage and the substrate stage can be connected. There is an unprecedented superior effect that the synchronization performance can be improved.

Claims

請 求 の 範 囲 The scope of the claims 1 . マスク と感光基板とを同期移動 しつつ、 前記マスクに形成されたパ ターンを投影光学系を介して前記感光基板に転写する露光装置であって. ベース部材上に浮上支持された基板ステージと ; 1. An exposure apparatus that transfers a pattern formed on the mask to the photosensitive substrate via a projection optical system while synchronously moving the mask and the photosensitive substrate. A substrate stage floating and supported on a base member When ; 前記基板ステ—ジの質量の前記投影光学系の縮小倍率倍の質量を有し. 前記ベース部材上に浮上支持されたマスクステージと ;  A mask stage having a mass that is twice the reduction magnification of the projection optical system of the mass of the substrate stage; and a mask stage floatingly supported on the base member; 前記両ステージ間に設けられ、 前記マスク と基板とを互いに逆向きに 移動するように前記基板ステージとマスクステージを駆動する第 1 のリ ニァモ一夕 とを有する露光装置。  An exposure apparatus provided between the two stages and having a first linear camera that drives the substrate stage and the mask stage so as to move the mask and the substrate in opposite directions. 2 . 前記投影光学系は、 前記感光基板上に前記マスクに形成されたバタ ーンの倒立像を投影する光学系である ことを特徴とする請求項 1 に記載 の路光 。 2. The road light according to claim 1, wherein the projection optical system is an optical system that projects an inverted image of a pattern formed on the mask on the photosensitive substrate. 3 . 前記感光基板が基板ステージ上に水平に保持され、 前記マスクが前 記マスクステージ上に垂直に保持される と共に、 前記投影光学系が、 複 数の透過光学素子、 光分割器及び反射光学素子とを含み、 物体面に配置 された前記マスクのパターンを結像面に配置された前記感光基板上に所 定の縮小倍率で投影する光学系である ことを特徴とする請求項 1 又は 2 に記載の露光装置。 3. The photosensitive substrate is horizontally held on a substrate stage, the mask is vertically held on the mask stage, and the projection optical system includes a plurality of transmission optical elements, a light splitter, and reflection optics. An optical system comprising a device and projecting the pattern of the mask arranged on an object plane onto the photosensitive substrate arranged on an image plane at a predetermined reduction magnification. 3. The exposure apparatus according to claim 1. 4 . 前記光分割器を介して前記マスクに形成されたァライ メ ン 卜マーク と前記感光基板上のァライ メ ン 卜マーク との両者を検出可能なハーフ T T Lァライ メ ン ト検出系を更に有する請求項 3 に記載の露光装置。 4. A half TTL alignment detection system capable of detecting both an alignment mark formed on the mask and the alignment mark on the photosensitive substrate via the light splitter. Item 4. The exposure apparatus according to Item 3. 5 . 前記べ一ス部材と前記マスクステージとの間に、 当該マスクステー ジを駆動する第 2のリ ニアモータが設けられている ことを特徴とする請 求項 1 に記載の露光装置。 5. The exposure apparatus according to claim 1, wherein a second linear motor that drives the mask stage is provided between the base member and the mask stage. 6 . 前記ベース部材と前記基板ステージとの間に、 当該基板ステージを 駆動する第 3のリ ニアモータが設けられている ことを特徴とする請求項 5 に記載の露光装置。 6. The exposure apparatus according to claim 5, wherein a third linear motor that drives the substrate stage is provided between the base member and the substrate stage. 7 . 前記第 1 の リ ニアモータによる前記両ステージの同期移動時の速度 比を微調整する回生制動制御回路が前記第 2の リ ニアモータ及び第 3の リニアモータの少な く とも一方に併設されている ことを特徴とする請求 項 6 に記載の露光装置。 7. A regenerative braking control circuit for finely adjusting the speed ratio of the two stages by the first linear motor during synchronous movement is provided in at least one of the second linear motor and the third linear motor. The exposure apparatus according to claim 6, wherein: 8 . 前記基板ステージは、 前記感光基板が同期移動される第一方向に駆 動される第 1 ステージと、 前記感光基板を保持して前記第 1 ステージと —体的に前記第 1 方向に移動する とともに該第 1 ステージに案内されて 第 1 方向と直交する第 2方向に移動可能な第 2 ステージとを有する こと を特徴とする請求項 1 、 5、 6及び 7のいずれか一項に記載の露光装置, 8. The substrate stage includes a first stage driven in a first direction in which the photosensitive substrate is synchronously moved, and the first stage holding the photosensitive substrate and moving physically in the first direction. And a second stage guided by the first stage and movable in a second direction orthogonal to the first direction, wherein the second stage is movable in a second direction orthogonal to the first direction. Exposure equipment, 9 . 前記基板ステージが空気軸受けを介してべ一ス部材上に浮上支持さ れている ことを特徴とする請求項 1 に記載の露光装置。 9. The exposure apparatus according to claim 1, wherein the substrate stage is levitated and supported on a base member via an air bearing. 1 0 . 前記マスクステージが空気軸受けを介してベース部材上に浮上支 持されている ことを特徴とする請求項 1 に記載の露光装置。 10. The exposure apparatus according to claim 1, wherein the mask stage is levitated and supported on a base member via an air bearing. 1 1 . マスク及び基板とそれぞれほぼ直交する光軸を有する投影光学系 を備え、 前記マスクのパターンを前記投影光学系を介して前記基板に転 写する走査露光装置において、 1 1. Projection optical system having an optical axis substantially orthogonal to the mask and the substrate A scanning exposure apparatus that transfers the pattern of the mask onto the substrate via the projection optical system. ベースと、  Base and 前記べ一ス上で前記マスク を移動する第 1 ステージと、  A first stage for moving the mask on the base; 前記ベース上で前記基板を移動する第 2ステージと、  A second stage for moving the substrate on the base; 前記投影光学系の倍率に応 じた速度比で前記マスク と前記基板とを同 期移動するために、 前記第 1 ステージと前記第 2ステージとに接続され る駆動系とを備え、  A driving system connected to the first stage and the second stage for synchronously moving the mask and the substrate at a speed ratio according to a magnification of the projection optical system; 前記駆動系は、 前記同期移動によって生じる反力をほぼ相殺するよう に、 前記第 1 ステージと前記第 2 ステージとを所定方向に沿って逆向き に駆動する ことを特徴とする走査露光装置。  The scanning exposure apparatus, wherein the drive system drives the first stage and the second stage in opposite directions along a predetermined direction so as to substantially cancel a reaction force generated by the synchronous movement. 1 2 . 前記第 1 ステージと前記第 2ステージとの質量比は、 前記投影光 学系の投影倍率とぼぼ一致する ことを特徴とする請求項 1 1 に記載の走 査露光装置。 12. The scanning exposure apparatus according to claim 11, wherein a mass ratio between the first stage and the second stage substantially matches a projection magnification of the projection optical system. 1 3 . 前記投影光学系は、 屈折光学素子と少な 〈 とも 1 つの反射光学素 子とを含み、 前記マスクのパターンの部分倒立像を前記基板上に縮小投 影する光学系である ことを特徴とする請求項 1 1 又は 1 2 に記載の走査 路光 ¥Ϊ 。 13. The projection optical system includes a refractive optical element and at least one reflective optical element, and is an optical system that reduces and projects a partially inverted image of the pattern of the mask onto the substrate. The scanning path light according to claim 11 or 12, wherein: 1 4 . 前記投影光学系は、 少な く とも 2つの反射光学素子を含み、 茚記 投影光学系に対してその像面が物体面側に配置される ことを特徴とする 請求項 1 1 又は 1 2 に記載の走査露光装置。 14. The projection optical system includes at least two reflection optical elements, and an image plane of the projection optical system is arranged on an object plane side with respect to the projection optical system. 3. The scanning exposure apparatus according to 2. 1 5 . 前記投影光学系は、 前記反射光学素子と してミラー、 凹面鏡、 及 びビームスプリ ッ夕一の少な く とも 1 つを含むことを特徴とする請求項 1 3 に記載の走査露光装置。 15. The projection optical system includes a mirror, a concave mirror, and a reflection optical element. 14. The scanning exposure apparatus according to claim 13, further comprising at least one of a beam splitter and a beam splitter. 1 6 . 前記投影光学系は、 前記反射光学素子と してミラー、 凹面鏡、 及 びビ一ムスプリ ッタ一の少な く とも 1 つを含むこ とを特徴とする請求項 1 4 に記載の走査露光装置。 16. The scanning device according to claim 14, wherein the projection optical system includes at least one of a mirror, a concave mirror, and a beam splitter as the reflection optical element. Exposure equipment. 1 7 . 前記投影光学系の物体面と像面とは同一平面内に配置され、 前記 第 1 及び第 2 ステージは前記マスク と前記基板とをそれぞれ前記平面に 沿って移動する ことを特徴とする請求項 1 1 に記載の走査露光装置。 17. The object plane and the image plane of the projection optical system are arranged in the same plane, and the first and second stages move the mask and the substrate along the plane, respectively. The scanning exposure apparatus according to claim 11. 1 8 . 前記投影光学系の物体面と像面とは同一平面内に配置され、 前記 第 1 及び第 2ステージは前記マスク と前記基板とをそれぞれ前記平面に 沿って移動する ことを特徴とする請求項 1 4に記載の走査露光装置。 18. The object plane and the image plane of the projection optical system are arranged in the same plane, and the first and second stages move the mask and the substrate along the plane, respectively. The scanning exposure apparatus according to claim 14. 1 9 . 前記ベースに対して前記投影光学系と反対側に配置され、 前記マ スクを光ビームで照射する照明系を更に備える こ とを特徴とする請求項 1 4 に記載の走査露光装置。 19. The scanning exposure apparatus according to claim 14, further comprising an illumination system disposed on a side opposite to the projection optical system with respect to the base and configured to irradiate the mask with a light beam. 2 0 . 前記ベースに対して前記投影光学系と反対側に配置され、 前記マ スクを光ビームで照射する照明系を更に備える ことを特徴とする請求項 1 7 に記載の走査露光装置。 20. The scanning exposure apparatus according to claim 17, further comprising an illumination system arranged on a side opposite to the projection optical system with respect to the base and configured to irradiate the mask with a light beam. 2 1 . 前記ベースに対して前記投影光学系と反対側に配置され、 前記マ スクを光ビームで照射する照明系を更に備える ことを特徴とする請求項 1 8 に記載の走査露光装置。 21. The scanning exposure apparatus according to claim 18, further comprising an illumination system arranged on a side opposite to the projection optical system with respect to the base and configured to irradiate the mask with a light beam. 2 2 . マスクのパターンを投影光学系を介して基板に転写する走査露光 方法において、 22. In a scanning exposure method for transferring a mask pattern onto a substrate via a projection optical system, 前記マスク と前記基板とを、 前記投影光学系の光軸と垂直な同一平面 内に配置し、  The mask and the substrate are arranged on the same plane perpendicular to the optical axis of the projection optical system, 前記マスクのパターンの部分倒立像を前記基板上に投影し、  Projecting a partial inverted image of the pattern of the mask onto the substrate, 前記平面上の所定方向に沿って逆向きに前記マスク と前記基板とを同 期移動し、 それによ り前記同期移動によって生じる反力をほぼ相殺する ことを特徴とする走査露光方法。  A scanning exposure method comprising: synchronously moving the mask and the substrate in opposite directions along a predetermined direction on the plane, thereby substantially canceling a reaction force generated by the synchronous movement. 2 3 . 前記マスク と前記基板とは、 前記投影光学系の倍率に応じた速度 比で同期移動される ことを特徴とする請求 2 2 に記載の走査露光方法。 23. The scanning exposure method according to claim 22, wherein the mask and the substrate are synchronously moved at a speed ratio according to a magnification of the projection optical system. 2 4 . 前記マスクのパターンを前記基板上のパターンに重ね合わせて転 写するために、 前記同期移動中に前記マスク と前記基板との速度比を調 整して、 前記基板上のパターンと前記マスクのパターン像との倍率誤差 と歪み誤差との少な く とも一方を補正する ことを特徴とする請求項 2 2 又は 2 3記載の走査露光方法。 24. In order to transfer the pattern of the mask by superimposing it on the pattern on the substrate, the speed ratio between the mask and the substrate is adjusted during the synchronous movement so that the pattern on the substrate is transferred to the pattern on the substrate. The scanning exposure method according to claim 22 or 23, wherein at least one of a magnification error and a distortion error with respect to a mask pattern image is corrected.
PCT/JP1997/003317 1997-09-19 1997-09-19 Aligner, scanning aligner and scanning exposure method Ceased WO1999016112A1 (en)

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Publication number Priority date Publication date Assignee Title
EP1246350A3 (en) * 2001-03-26 2005-08-10 Fanuc Ltd Linear driving device

Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH08229759A (en) * 1995-02-24 1996-09-10 Canon Inc Positioning device and device manufacturing apparatus and method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08229759A (en) * 1995-02-24 1996-09-10 Canon Inc Positioning device and device manufacturing apparatus and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1246350A3 (en) * 2001-03-26 2005-08-10 Fanuc Ltd Linear driving device

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