[go: up one dir, main page]

WO1999009583A1 - Procede et dispositif pour attaque au plasma - Google Patents

Procede et dispositif pour attaque au plasma Download PDF

Info

Publication number
WO1999009583A1
WO1999009583A1 PCT/AT1998/000193 AT9800193W WO9909583A1 WO 1999009583 A1 WO1999009583 A1 WO 1999009583A1 AT 9800193 W AT9800193 W AT 9800193W WO 9909583 A1 WO9909583 A1 WO 9909583A1
Authority
WO
WIPO (PCT)
Prior art keywords
waveguide
reaction chamber
rod
target
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/AT1998/000193
Other languages
German (de)
English (en)
Inventor
Heinz Steinhardt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WALTHER HELGA
Original Assignee
WALTHER HELGA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WALTHER HELGA filed Critical WALTHER HELGA
Priority to AU87183/98A priority Critical patent/AU8718398A/en
Publication of WO1999009583A1 publication Critical patent/WO1999009583A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge

Definitions

  • the invention relates to a method and a device for surface removal or surface build-up, in particular for use in plasma etching or in gas phase deposition (CVD), in which the microwave radiation generated by a magnetron in a waveguide, preferably in the form of a standing wave under reflection at the end of the waveguide facing away from the magnetron, is used for plasma generation.
  • CVD gas phase deposition
  • the technological background of the invention is as follows: In the manufacture of integrated circuits and in the production of power semiconductors, the requirements for the geometric dimensions and for heat dissipation increase. On the one hand, these assemblies must be thinned from the original material thickness of approx. 0.76 mm to less than 0.2 mm for installation in so-called chip cards, such as ATM cards, which thus become intelligent data carriers and data processing elements.
  • chip cards in circulation usually have a thickness of 0.75 mm.
  • the thinning is necessary for several reasons:
  • the integrated circuit usually located on a silicon single crystal must be able to be installed within the chip card in such a way that it is protected against breakage and damage.
  • the metal contact surfaces required above the integrated circuit are embedded in the surface of the chip card and also require a considerable material thickness to function reliably.
  • the most widely used material is silicon, which does not have good heat conduction properties. In order to dissipate the heat loss resulting from high operating performance, it is necessary to thin these components. As a result, the series thermal resistance from the power component located on the surface of the silicon single crystal wafer to the coolable underside is drastically reduced.
  • the components have been thinned mechanically, usually on wet surface grinding machines. This process can only take place at the end of the manufacturing process, since the silicon wafers on which the integrated circuits and power semiconductors are manufactured usually have a diameter of 150-200 mm. If the supplied silicon wafers already have the final thickness required of less than 0.2 mm (the target is even less than 0.1 mm), the production of these large silicon wafers would be necessary in the many process steps due to the relatively low mechanical Stability almost impossible.
  • microwave energy in the form of a standing wave is concentrated at a suitable point in a waveguide.
  • a tube is guided through the waveguide in the direction of the electrical field of the microwave.
  • the microwave energy is converted in the form of a plasma discharge, as a result of which ions and neutral particles, which are not charged, are formed from them.
  • Charged particles (ions) are retained by the field distribution in the plasma space, the neutral particles (radicals) are brought out of the plasma space by their own movement and the gas flow and are available for reactions in a wide pressure range between 5.10 Pa to 5.10 Pa
  • the plasma discharge tube the diameter of which corresponds to a quarter of the wavelength of the standing wave, is positioned in the waveguide so that the standing wave forms a first voltage maximum on a first side of the tube, and that the standing wave, which is also supplied in a reflected manner, forms a second, opposite-phase voltage maximum on a second side of the tube, that of the first side lies opposite and faces an end termination of the waveguide system.
  • this previously known method which is aimed at the generation of neutral particles, enables etching rates of up to approximately 1 ⁇ m / min of silicon when using SFg as the etching gas.
  • the aim of the invention is to provide a method and a device with which substantially higher etching rates can be achieved.
  • a rod conductor is arranged at a suitable point in the waveguide in the direction of the electrical field of the microwaves running through the waveguide so that part of its length lies outside the waveguide in the reaction chamber, at least the one lying outside the waveguide Area of the rod conductor is covered by a covering made of dielectric material.
  • KPG coaxial plasma generator
  • the KPG takes the form of a virtual coaxial line for microwaves, the inner conductor of which is the metallic rod conductor, while its outer conductor is formed by the plasma jacket surrounding the dielectric sheath.
  • the conversion of the energy fed into the excitation (dissociation and ionization) of the gas molecules also takes place in the outer conductor.
  • the conversion of the energy of the electromagnetic traveling wave in the outer conductor is a desired effect and serves to generate plasma. supply.
  • the resulting excited particles and the UV radiation that is generated at the same time are used for plasma processes such as for example the etching of semiconductors.
  • the virtual coaxial line created according to the invention is in principle a coaxial traveling wave line with a reflection-free terminating resistor.
  • This terminating resistor is formed by the plasma jacket of the virtual coaxial conductor itself and corresponds to a broadband termination, a so-called wave sump.
  • the invention thus consists in moving the plasma generation directly into the reaction chamber and in using a rod conductor covered with a dielectric for generating the plasma.
  • This combination makes it possible to apply the suction voltage between the target and the plasma sheath that forms around the coaxial conductor during operation, as a result of which the etching takes place not only by radicals but also by ions escaping from the plasma jacket and the etching rate by more than an order of magnitude compared to that previously known method can be increased and values of 30 ⁇ m to 50 ⁇ m / min etching rate for silicon and the use of SFg as etching gas can be achieved.
  • the UV radiation generated during the plasma generation brings about a further increase in the etching rate.
  • the position of the rod conductor can be the same as that of the tube in the previously known device.
  • the rod conductor is coupled in such a way that there is a coaxial coupling out of the waveguide, the rod conductor representing the core of the coaxial cable.
  • a coaxial decoupling can take place, for example, through a decoupling loop, through a decoupling T-piece, or through a path transformer in the form of a cone. All this serves to convert the impedance in order to decouple it from the symmetrical rectangular waveguide to transfer the microwave energy into the asymmetrical coaxial conductor system.
  • the material from which the rod conductor and its base are made is metallic, for example copper or brass.
  • the covering consists of dielectric material, for example aluminum oxide, ceramic or glass.
  • the length of the rod conductor in the reaction chamber is essentially of the same dimension as the length of the target to be processed in the direction of the rod conductor in order to achieve a uniform loading of the target in the direction of the rod conductor.
  • several rod conductors can be arranged parallel to each other in a plane that is parallel to the target plane, or the target is moved back and forth in its plane and normal to the direction of the rod conductor .
  • Lamda is the wavelength of the electromagnetic wave generated by the magnetron in the reaction chamber.
  • the frequencies of the magnetrons used are usually at 2.45 GHz, which means a wavelength of 12 cm.
  • the minimum distance between the edges of two immediately adjacent rod conductors should therefore be 3 cm.
  • FIG. 1 shows a device according to the invention in section
  • FIG. 2 shows an arrangement of three devices according to
  • Fig. 1 in plan view and Fig. 3 is a schematic section of the arrangement of
  • a device according to the invention has a magnetron 1, the decoupling pin 10 of which projects into a waveguide 6.
  • the length of the waveguide 6 can be changed by a slide 4, which allows it to be tuned.
  • the position of the slide 4 is changed in a known manner by means of an adjusting mechanism 5.
  • a rod conductor 7 with its axis running in the direction of the electric field of the microwave is installed in the waveguide 6.
  • the rod conductor 7 is provided at the end, which lies in the waveguide 6, with a coupling-out device 3, which works as an impedance converter and is used to couple the conductor conductor 7 to the waveguide 6.
  • a coolant inlet 2 for supplying a preferably gaseous coolant into the hollow interior of the rod conductor 7. The coolant flows through the tubular rod conductor 7, exits at its end and flows back into the waveguide in the annular gap between the outer shell of the rod conductor 7 and the inner shell of the dielectric sheath 8.
  • the other end of the rod conductor 7 protrudes into the reaction chamber 11 and is sealed off from the outside of the waveguide 6 with a sheathing 8 made of dielectric material.
  • a plasma jacket 12 is formed around this jacket 8, the excited particles and UV radiation of which are available for further use, for example for etching.
  • the dielectric sheathing 8 it is also possible to design the dielectric sheathing 8 to be gas-permeable and to effect the gas supply into the reaction chamber 11 via the annular gap between the rod conductor and its sheathing. It can be the gas flow entering the reaction chamber is also a partial flow of the supplied cooling gas.
  • FIG. 2 Such an arrangement is shown schematically in plan view in FIG. 2, three rod conductors 7, each with its waveguide 6 and magnetron 1, being provided.
  • the walls of the reaction chamber 11 are not shown.
  • three rod conductors 7 are arranged parallel to one another. A head-to-foot orientation is chosen for reasons of space, but this is not absolutely necessary.
  • FIG. 3 again without showing the walls of the reaction chamber 11, a schematic section normal to the axes of the rod conductor 7 is shown.
  • a high-frequency alternating voltage is applied between the target 14 on its holder 15 and the earth by means of an HF generator 13. Since both the walls of the reaction chamber 11 and each rod conductor 7 are grounded, there is a voltage build-up between the plasma 12 and the target 14, the AC voltage, which can optionally be superimposed on a DC voltage, acts as a suction voltage and accelerates it Plasma jacket 12 ions formed towards the target and thus increases the etching rate.
  • the invention is not limited to the exemplary embodiment shown and described, but can be varied and modified in various ways. So it is not necessary in all circumstances to provide cooling for the To provide rod conductor 7, more or less than three rod conductors can be provided, and no suction voltage, a pure AC voltage, a pure DC voltage or, as already mentioned, a combination of AC and DC voltage can be applied. It is also possible to design the rod conductor (including the covering) not in a straight line but in a meandering or spiral shape. The material of the rod conductor and the sheath can be matched to one another in terms of their thermal expansion coefficient.
  • the dimensions of the rod conductor are typically about 6 mm outside diameter, the dielectric sheath has about 15 mm outside diameter.
  • the waveguide has dimensions of 45 mm x 90 mm x 200 mm, for example, and is of the R26 type, for example, the type 2M240 or 2M172A from Toshiba can be used as the magnetron. If a plurality of bar conductors are arranged, it can be provided that immediately adjacent bar conductors have different phase positions.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

L'invention concerne un procédé et un dispositif pour le décapage de surfaces ou la constitution de surfaces, destinés à être utilisés notamment lors de l'attaque au plasma ou du dépôt chimique en phase vapeur. Selon ce procédé, on utilise le faisceau hyperfréquence produit par un magnétron (1) dans un guide d'ondes creux (6), de préférence sous la forme d'un arbre vertical, avec une réflexion au niveau de l'extrémité du guide d'ondes creux, opposée au magnétron. L'invention est caractérisée en ce que l'énergie des hyperfréquences est guidée dans un guide d'ondes en forme de barre (7) au moyen d'un transformateur d'impédance (3). Ce guide d'ondes en forme de barre est prévu en un point approprié dans le guide d'ondes creux (6), en direction du champ électrique des hyperfréquences, s'étend à travers le guide d'ondes creux et se trouve en partie à l'extérieur du guide d'ondes creux, dans une chambre de réaction (11). Au moins une zone du guide d'ondes en forme de barre, se situant à l'extérieur du guide d'ondes creux, est recouverte par une gaine (8) en matériau diélectrique à l'extérieur de laquelle se forme l'enveloppe de plasma (12) voulue.
PCT/AT1998/000193 1997-08-13 1998-08-13 Procede et dispositif pour attaque au plasma Ceased WO1999009583A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU87183/98A AU8718398A (en) 1997-08-13 1998-08-13 Method and device for plasma etching

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT135497 1997-08-13
ATA1354/97 1997-08-13

Publications (1)

Publication Number Publication Date
WO1999009583A1 true WO1999009583A1 (fr) 1999-02-25

Family

ID=3512080

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/AT1998/000193 Ceased WO1999009583A1 (fr) 1997-08-13 1998-08-13 Procede et dispositif pour attaque au plasma

Country Status (2)

Country Link
AU (1) AU8718398A (fr)
WO (1) WO1999009583A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10026180A1 (de) * 2000-05-26 2001-12-06 Steag Rtp Systems Gmbh Vorrichtung und Verfahren zum Beschichten von Objekten
DE102011100057A1 (de) * 2011-04-29 2012-10-31 Centrotherm Thermal Solutions Gmbh & Co. Kg Vorrichtung und verfahren zum behandeln von substraten mit einem plasma

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3923390A1 (de) * 1988-07-14 1990-01-25 Canon Kk Vorrichtung zur bildung eines grossflaechigen aufgedampften films unter verwendung von wenigstens zwei getrennt gebildeten aktivierten gasen
DE4136297A1 (de) * 1991-11-04 1993-05-06 Plasma Electronic Gmbh, 7024 Filderstadt, De Vorrichtung zur lokalen erzeugung eines plasmas in einer behandlungskammer mittels mikrowellenanregung
DE19532435A1 (de) * 1995-09-02 1997-03-06 Ver Foerderung Inst Kunststoff Vorrichtung und Verfahren zum Erzeugen eines Plasmas

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3923390A1 (de) * 1988-07-14 1990-01-25 Canon Kk Vorrichtung zur bildung eines grossflaechigen aufgedampften films unter verwendung von wenigstens zwei getrennt gebildeten aktivierten gasen
DE4136297A1 (de) * 1991-11-04 1993-05-06 Plasma Electronic Gmbh, 7024 Filderstadt, De Vorrichtung zur lokalen erzeugung eines plasmas in einer behandlungskammer mittels mikrowellenanregung
DE19532435A1 (de) * 1995-09-02 1997-03-06 Ver Foerderung Inst Kunststoff Vorrichtung und Verfahren zum Erzeugen eines Plasmas

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10026180A1 (de) * 2000-05-26 2001-12-06 Steag Rtp Systems Gmbh Vorrichtung und Verfahren zum Beschichten von Objekten
DE102011100057A1 (de) * 2011-04-29 2012-10-31 Centrotherm Thermal Solutions Gmbh & Co. Kg Vorrichtung und verfahren zum behandeln von substraten mit einem plasma

Also Published As

Publication number Publication date
AU8718398A (en) 1999-03-08

Similar Documents

Publication Publication Date Title
DE69403816T2 (de) Gerät und Verfahren zu erhöhter induktiver Ankopplung an Plasmen mit reduzierter Zerstäubungskontamination
DE69211508T2 (de) Verfahren und Geräte zur Einschränkung des Plasma-Ätzgebietes zur Erlangung präziser Formgestaltung von Substratöberflächen
DE69313275T2 (de) Plasma-behandlungseinrichtung, wobei ein gleichförmiges elektrisches feld durch ein dielektrisches fenster induziert wird und dazugehöriges verfahren
DE60038175T2 (de) Plasmaätzkammer
DE69903032T2 (de) Anordnung eines fokussierenden ringes zur beseitigung von uneingeschlossenem plasma innerhalb einer plasmabehandlungkammers
DE69711314T2 (de) Aktive Abschirmvorrichtung zur Erzeugung eines Plasmas für die Zerstäubung
DE69301942T2 (de) Verfahren und Gerät zur Beseitigung von Oberflächenbeschädigungen in Halbleiter-Materialien mittels Plasma-Ätzen
DE69421033T2 (de) RF induktive Plasmaquelle zur Plasmabehandlung
DE3915477C2 (de) Vorrichtung zur Erzeugung eines Plasmas mit Mikrowellen
DE19781667B4 (de) Plasmaerzeugungsverfahren und -gerät mit einer induktiv gekoppelten Plasmaquelle
DE2716592C3 (de) Plasma-Ätzvorrichtung
DE69504254T2 (de) Vorrichtung und Verfahren zur Halbleitersbearbeitung
DE3905303C2 (de) Vorrichtung zur Erzeugung eines Plasmas durch Mikrowellen
DE69128345T2 (de) Induktiver plasmareaktor im unteren hochfrequenzbereich
DE69619525T2 (de) Niederinduktive, grossflächige spule für eine induktiv gekoppelte plasmaquelle
EP0593931B1 (fr) Dispositif de production de plasmas micro-ondes
DE69426463T2 (de) Mikrowellenplasmareaktor
DE68924413T2 (de) Radiofrequenzinduktion/Mehrpolplasma-Bearbeitungsvorrichtung.
DE68921370T2 (de) Electronzyklotronresonanz-Ionenquelle.
DE69421872T2 (de) Plasmaerzeugungsverfahren und -gerät und Plasmabearbeitungsverfahren und -gerät
DE69510576T2 (de) Plasma-Entschichtungsvorrichtung mit Mikrowellenfalle
DE60036631T2 (de) Plasmabehandlungsapparatur und plasmabehandlungsverfahren
DE4319717A1 (de) Vorrichtung zum Erzeugen planaren Niedrigdruckplasmas unter Verwendung einer Spule mit deren Achse parallel zu der Oberfläche eines Koppelfensters
DE69312544T2 (de) Plasmaerzeugungsverfahren und dieses Verfahren verwendende Plasmaerzeugungsvorrichtung
WO2000035256A1 (fr) Dispositif de production d'un jet de plasma froid libre

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH GM HR HU ID IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG US UZ VN YU ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW SD SZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

Ref document number: 1999512538

Format of ref document f/p: F

NENP Non-entry into the national phase

Ref country code: CA