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WO1999002277A1 - Structure de fermeture hermetique pour dispositifs photo-emetteurs organiques - Google Patents

Structure de fermeture hermetique pour dispositifs photo-emetteurs organiques Download PDF

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Publication number
WO1999002277A1
WO1999002277A1 PCT/US1998/014099 US9814099W WO9902277A1 WO 1999002277 A1 WO1999002277 A1 WO 1999002277A1 US 9814099 W US9814099 W US 9814099W WO 9902277 A1 WO9902277 A1 WO 9902277A1
Authority
WO
WIPO (PCT)
Prior art keywords
sealing structure
light emitting
organic light
metal film
dielectric film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1998/014099
Other languages
English (en)
Inventor
Gary W. Jones
Webster E. Howard
Steven M. Zimmerman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FED Corp
eMagin Corp
Original Assignee
FED Corp
FED Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/074,406 external-priority patent/US6198220B1/en
Application filed by FED Corp, FED Corp USA filed Critical FED Corp
Priority to EP98933245A priority Critical patent/EP1021255A1/fr
Priority to CA002295676A priority patent/CA2295676A1/fr
Publication of WO1999002277A1 publication Critical patent/WO1999002277A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Definitions

  • the present invention relates to displays comprising organic light emitting devices ("OLEDs").
  • OLEDs organic light emitting devices
  • the invention relates to methods and structures for sealing OLEDs.
  • Electroluminescent devices which may be further classified as either organic or inorganic, are well known in graphic display and imaging art.
  • the benefits of organic electroluminescent devices, such as organic light emitting devices, include: high visibility due to self-emission; superior impact resistance; and ease of handling of the solid state devices.
  • OLEDs such as organic light emitting diodes
  • An OLED is typically a thin film structure formed on a substrate such as soda-lime glass.
  • a light emitting layer of a luminescent organic solid, as well as adjacent semiconductor layers, are sandwiched between a cathode and an anode.
  • the semiconductor layers may be either hole-injecting or electron-injecting layers.
  • the light emitting layer may be selected from any of a multitude of fluorescent organic solids.
  • the light emitting layer may consist of multiple sublayers.
  • the positive and negative charges meet in the organic material layer(s), they recombine and produce photons.
  • the wave length ⁇ and consequently the color ⁇ of the photons depends on the electronic properties of the organic material in which the photons are generated.
  • OLEDs are formed on a single substrate and arranged in groups in a grid pattern.
  • OLED groups forming a column of the grid may share a common cathode, or cathode line.
  • OLED groups forming a row of the grid may share a common anode, or anode line.
  • the individual OLEDs in a given group emit light when their cathode line and anode line are activated at the same time.
  • OLEDs have a number of beneficial characteristics. These characteristics include a low activation voltage (about 2 volts), fast response when formed with a thin light emitting layer, and high brightness in proportion to the injected electric current. Depending on the composition of the organic material making up the light emitting layer, many different colors of light may be produced, ranging from visible blue, to green, yellow and red.
  • OLEDs are susceptible to damage resulting from exposure to the atmosphere.
  • the fluorescent organic material in the light emitting layer can be reactive. Exposure to moisture and oxygen may cause a reduction in the useful life of the light emitting device.
  • the organic material is susceptible to reacting with constituents of the atmosphere such as water and oxygen. Additionally, the materials that typically comprise the cathode and anode may react with oxygen and may be negatively affected by oxidation.
  • One disadvantage of oxygen and moisture penetration into the interior of the OLED is the potential to form metal oxide impurities at the metal-organic material interface. In a matrix addressed OLED, these metal oxide impurities may cause separation of the cathode or anode from the organic material. Oxidation sensitive cathode materials such as Mg-Ag or Al-Li are especially susceptible. The result may be dark, non-emitting spots at the areas of separation due to a lack of current flow.
  • Edge shorting between the cathode and anode layers is a further problem currently affecting most conventional OLED displays. Edge shorting reduces the illumination potential of the display devices. For the reasons set forth above, exposing a conventional OLED to the atmosphere, shortens its life. To obtain a practical, useable OLED, it is necessary to protect or seal the device, so that water, oxygen, etc., do not infiltrate the light emitting layer or oxidize the electrodes. Methods commonly employed for protecting or sealing inorganic electroluminescent devices are typically not effective for sealing OLEDs.
  • the silicon oil infiltrates the light emitting layer, the electrodes, and any hole-injecting or electron-injecting layers.
  • the oil alters the properties of the organic light emitting layer, reducing or eliminating its light emission capabilities.
  • resin coatings that have been used to protect inorganic electroluminescent devices are not suited for OLEDs.
  • the solvent used in the resin coating solution tends to infiltrate the light emitting layer, degrading the light emission properties of the device.
  • U.S. Patent No. 5,505,985 issued to Nakamura, et al., (“Nakamura”) teaches a process for depositing a film comprising an electrically insulating polymer as a protective layer on an outer surface of an organic electroluminescent device.
  • Nakamura asserts that the polymers disclosed protect the device and have excellent electrical resistivity, breakdown strength and moisture resistance, while at the same time are transparent to emitted light.
  • Nakamura also teaches that, when deposited by a physical vapor deposition (PVD) method, the protective layer formed by the polymer compound is pin-hole free.
  • PVD physical vapor deposition
  • the sealing method taught by Nakamura yields a moisture diffusivity too high to be useful for reliable OLEDs. Moisture levels as low as 1 ppm may damage an OLED.
  • an innovative and economical display device comprising: an organic light emitting device; and a sealing structure overlying the organic light emitting device, wherein the sealing structure comprises a dielectric film and a metal film.
  • the metal film may overlie the dielectric film.
  • the sealing structure may comprise a multi-layer stack of dielectric and metal film.
  • the multilayer stack may comprise a first dielectric film overlying the organic light emitting device, followed by alternating layers of metal film and dielectric film.
  • the sealing structure may comprise a material with low oxygen permeability and/or low moisture permeability.
  • the sealing structure may further comprise a material which reacts with moisture and/or oxygen to seal pin holes.
  • the sealing structure may also have reduced internal stresses.
  • the sealing structure may further comprise an opening for connecting the organic light emitting device to electrical circuitry.
  • the present invention also includes a display device comprising: a matrix comprising a plurality of organic light emitting devices; a sealing structure overlying the organic light emitting devices; a plurality of conductors underlying the sealing structure, wherein each conductor functions as either an anode or cathode for more than one of said organic light emitting devices; wherein the sealing structure includes openings for permitting direct contact between circuitry external to the matrix and the conductors underlying the sealing structure.
  • the present invention further includes a method for sealing an organic light emitting device comprising the steps of: forming a dielectric film layer overlying said organic light emitting device; and forming a metal film layer over said dielectric film.
  • the method may comprise the further step of covering the organic light emitting device and film layers with a layer of photoresist material.
  • the method may include the step of presealing pin holes in the metal film layer.
  • the presealing step may comprise baking the display device in purified air or in an N-O 2 atmosphere.
  • Fig. 1 is a cross-sectional side view in elevation along line A-A of Fig. 2 of an embodiment of an OLED display of the present invention.
  • Fig. 2 is a cross-sectional side view of an OLED showing the movement of holes and electrons.
  • Fig. 3 is a cross-sectional side view of a portion of an OLED display of the present invention showing openings in the sealing structure for connection to outside circuitry.
  • FIG. 1 An embodiment of the present invention is shown in Fig. 1 as device 100, a sealed OLED display.
  • Device 100 is a layered structure of conductive, insulating, and semiconductive materials constructed in a series of process steps.
  • a preferred method for making the sealed display device 100 is fabricating an organic light emitting diode (OLED) display 180 comprising at least one OLED 10 of the type depicted in Fig. 2.
  • OLED 10 may be arranged in any of a number of known matrix-addressed configurations.
  • Fig. 2 depicts a typical OLED of the type known in the prior art.
  • a typical OLED 10 has a laminate structure 3 formed on a substrate 200.
  • Semiconductor layer 6 may be, for example, a hole-injecting layer.
  • electron-injecting layer 7 may be provided in addition to, or in lieu of, hole-injecting semiconductor layer 6, depending on the specific materials employed.
  • Light emitting layer 8 may be selected from any of a multitude of luminescent organic solids, and may consist of multiple sub-layers.
  • Substrate 200 is often soda-lime glass.
  • the laminate structure is formed on a substrate 200 using known fabrication techniques, such as evaporative deposition, chemical vapor deposition (CVD), etching, etc.
  • CVD chemical vapor deposition
  • the size, form, material, etc., of the substrate 200 and of each layer of the laminated structure may be selected depending on the intended use of the device, such as a surface light source, a matrix photographic display, a matrix for a television image display device, etc.
  • the material for these layers may be selected from a number of acceptable organic or inorganic materials.
  • the organic light emissive layer 8 may be selected from any of a number of different materials depending on the light emission characteristics desired.
  • a film 150 of low pin hole density dielectric material is deposited on the outer surface of the OLED display 180 structure.
  • the dielectric film 150 may be formed to overlie the cathode 900.
  • Dielectric film 150 preferably is formed on the entire exposed outer surface of OLED display 180 opposite substrate 200.
  • dielectric film 150 is formed by the plasma enhanced chemical vapor deposition (PECVD) method.
  • PECVD plasma enhanced chemical vapor deposition
  • dielectric film 150 may be formed by CVD, evaporation, or sputtering. Shadow masking may be employed to prevent deposition of material in areas where external electrical connections to the OLED may be required.
  • Dielectric film 150 preferably comprises SiC deposited by PECVD from trimethylsilane to a thickness of 500 nm.
  • dielectric film 150 may comprise diamond-like carbon (DLC), SiO, SiO 2 . Si 3 N 4 , and SiN x O y (silicon oxynitride).
  • DLC diamond-like carbon
  • SiO SiO 2 . Si 3 N 4
  • SiN x O y silicon oxynitride
  • the preferred deposition method, as well as the desired film thickness depends on the dielectric material utilized. For example, for SiC, the PECVD deposition described above produces a dielectric film 150 with a suitable combination of dielectric strength, film adhesion, pin hole density and impermeability.
  • dielectric film 150 may comprise multiple layers of various dielectric materials, e.g., SiO 2 and SiC; DLC and SiC; or Si 3 Nu and SO 2 , which may be combined to form a single film with a desired net dielectric constant and other characteristics.
  • dielectric materials e.g., SiO 2 and SiC; DLC and SiC; or Si 3 Nu and SO 2 , which may be combined to form a single film with a desired net dielectric constant and other characteristics.
  • the aforementioned materials are not exclusive; it is contemplated that other dielectric materials may be used without departing from the scope of the invention.
  • Metal film 175 overlies the dielectric film 150.
  • metal film 175 is formed through sputter deposition.
  • the deposition process employed depends upon the metal deposited, as well as the desired film thickness and characteristics.
  • a combination of PECVD and electron beam or sputter gun deposition exhibits the lowest pin hole density.
  • Metal film 175 may also be formed by evaporation, CVD or other appropriate process.
  • shadow masks or lift off patterning may be used to prevent deposition of material in areas where external electrical connections will be made or to keep conductor pad areas open.
  • Metal film 175 may comprise anyone of the following materials: pure Al, 5-10 weight-
  • metal film 175 may comprise one or more layers of various metals, depending on the specific characteristics desired.
  • Metal film 175 is preferably formed of a material, or materials, which will self-seal pin holes or other defects in the film by volume expansion as metal oxide forms in the presence of moisture and/or oxygen.
  • Metal film 175 is constructed to reduce the film's susceptibility to cracking under stress.
  • 10 weight-% Ti-doped Al may be deposited via sputtering to a film thickness of 500 nm. This material and film thickness generally provides an acceptable combination of stress and moisture resistance while maintaining a relatively thin film.
  • RF or DC bias sputtering may also be employed in order to minimize pinholes.
  • any pin holes in metal film 175 may be presealed in a controlled environment, rather than waiting for the self-sealing characteristics of the metal film to work during operational use of the OLED display.
  • the device is preferably baked in purified air, or alternatively, a dry nitrogen-oxygen atmosphere, since moisture is the greatest hazard.
  • 8 purified air may be obtained through the use of filters commonly known to those of ordinary skill in the art.
  • the choice of materials and numbers of layers for films 150 and 175 depends on certain characteristics which may be desired for sealing structure 190.
  • at least one of the dielectric layers comprising dielectric film 150 and/or one of the metal layers comprising metal film 175 preferably has low moisture and oxygen permeability.
  • at least one of the metal layers comprising metal film 175 preferably reacts with moisture or oxygen to absorb the gases, or, alternatively, to seal off pin holes in the layer.
  • the materials used for the dielectric film 150 and metal film 175 may be constructed under varying amounts of tensile and compressive stress in order to achieve a low net internal stress throughout sealing structure 190.
  • the dielectric film layer 150 may be constructed by depositing silicon nitride, silicon dioxide, or silicon oxynidries by PEVCD methods adjusted to minimize internal stresses. Layers formed of Al typically possess internal compressive stresses which inhibit crack formation and growth.
  • Sealing structure 190 may also comprise alternating layers of metal and dielectric materials.
  • the first dielectric layer generally covers the OLED display 180 followed by the first metal layer.
  • a sealing structure 190 comprising alternating layers of SiO and Al provides the advantages described above. However, other combinations of metal and dielectric materials are within the scope of the invention.
  • One or more openings may be formed in the sealing structure 190 to provide access from the OLED display matrix to outside circuitry.
  • the outside circuitry typically connects to the matrix conductors at perimeter pad areas 155, shown in Fig. 3. If shadow masking or lift off patterning has not been employed, the perimeter pad areas 155, for connecting the OLED display to external circuitry, may be patterned using conventional photolithography techniques.
  • an opening 160 may be formed in the metal film 175.
  • An etch solution comprising 60 weight-% phosphoric acid, 5 weight-% nitric

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne une structure (190) de fermeture hermétique pour afficheur (100) à dispositif photo-émetteur organique. Cette structure d'étanchéité (190) présente une faible perméabilité à l'humidité et à l'oxygène. L'une des couches métalliques (175) au moins peut réagir avec l'humidité ou l'oxygène de manière à fermer de façon hermétique les trous d'épingle. Une structure (190) de fermeture hermétique à faible contrainte nette peut être obtenue en combinant des films extensibles et des films à compression. La structure (190) de fermeture hermétique peut être gravée pour créer des ouvertures (160) de connexion avec les circuits extérieurs. Cette structure (190) de fermeture hermétique novatrice réduit au minimum les fuites d'humidité et les courts-circuits verticaux entre la cathode (900) et anode (400) de la diode.
PCT/US1998/014099 1997-07-11 1998-07-09 Structure de fermeture hermetique pour dispositifs photo-emetteurs organiques Ceased WO1999002277A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP98933245A EP1021255A1 (fr) 1997-07-11 1998-07-09 Structure de fermeture hermetique pour dispositifs photo-emetteurs organiques
CA002295676A CA2295676A1 (fr) 1997-07-11 1998-07-09 Structure de fermeture hermetique pour dispositifs photo-emetteurs organiques

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US5235797P 1997-07-11 1997-07-11
US60/052,357 1997-07-11
US09/074,406 1998-05-08
US09/074,406 US6198220B1 (en) 1997-07-11 1998-05-08 Sealing structure for organic light emitting devices

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Publication Number Publication Date
WO1999002277A1 true WO1999002277A1 (fr) 1999-01-21

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000036661A1 (fr) * 1998-12-17 2000-06-22 Cambridge Display Technology Ltd. Dels organiques
US6366017B1 (en) 1999-07-14 2002-04-02 Agilent Technologies, Inc/ Organic light emitting diodes with distributed bragg reflector
US6537688B2 (en) 2000-12-01 2003-03-25 Universal Display Corporation Adhesive sealed organic optoelectronic structures
US6576351B2 (en) 2001-02-16 2003-06-10 Universal Display Corporation Barrier region for optoelectronic devices
US6614057B2 (en) 2001-02-07 2003-09-02 Universal Display Corporation Sealed organic optoelectronic structures
US6624568B2 (en) 2001-03-28 2003-09-23 Universal Display Corporation Multilayer barrier region containing moisture- and oxygen-absorbing material for optoelectronic devices
US6664137B2 (en) 2001-03-29 2003-12-16 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
WO2004105149A1 (fr) * 2003-05-16 2004-12-02 E.I. Dupont De Nemours And Company Films barrieres pour substrats en plastique fabriques par depot de couches atomiques
US6888307B2 (en) 2001-08-21 2005-05-03 Universal Display Corporation Patterned oxygen and moisture absorber for organic optoelectronic device structures
US6933538B2 (en) 2000-09-11 2005-08-23 Osram Opto Semiconductors Gmbh Plasma encapsulation for electronic and microelectronic components such as organic light emitting diodes
EP1283554A3 (fr) * 2001-08-06 2005-08-24 Philips Intellectual Property & Standards GmbH Dispositif d'affichage électroluminescent organique avec couche protectrice
DE102004049955B4 (de) * 2004-10-13 2008-12-04 Schott Ag Verfahren zur Herstellung eines optischen Bauelements, insbesondere einer OLED
US7642559B2 (en) 1999-06-04 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
WO2017206440A1 (fr) 2016-05-30 2017-12-07 Boe Technology Group Co., Ltd. Panneau d'affichage, appareil d'affichage le comprenant et procédé de fabrication associé

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US5686360A (en) * 1995-11-30 1997-11-11 Motorola Passivation of organic devices
US5693956A (en) * 1996-07-29 1997-12-02 Motorola Inverted oleds on hard plastic substrate
US5721160A (en) * 1994-12-13 1998-02-24 The Trustees Of Princeton University Multicolor organic light emitting devices
US5734225A (en) * 1996-07-10 1998-03-31 International Business Machines Corporation Encapsulation of organic light emitting devices using siloxane or siloxane derivatives
US5736754A (en) * 1995-11-17 1998-04-07 Motorola, Inc. Full color organic light emitting diode array
US5771562A (en) * 1995-05-02 1998-06-30 Motorola, Inc. Passivation of organic devices

Patent Citations (6)

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US5721160A (en) * 1994-12-13 1998-02-24 The Trustees Of Princeton University Multicolor organic light emitting devices
US5771562A (en) * 1995-05-02 1998-06-30 Motorola, Inc. Passivation of organic devices
US5736754A (en) * 1995-11-17 1998-04-07 Motorola, Inc. Full color organic light emitting diode array
US5686360A (en) * 1995-11-30 1997-11-11 Motorola Passivation of organic devices
US5734225A (en) * 1996-07-10 1998-03-31 International Business Machines Corporation Encapsulation of organic light emitting devices using siloxane or siloxane derivatives
US5693956A (en) * 1996-07-29 1997-12-02 Motorola Inverted oleds on hard plastic substrate

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6960877B1 (en) 1998-12-17 2005-11-01 Cambrdige Display Technology Limited Organic light-emitting devices including specific barrier layers
WO2000036661A1 (fr) * 1998-12-17 2000-06-22 Cambridge Display Technology Ltd. Dels organiques
US9368680B2 (en) 1999-06-04 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
EP1562231B1 (fr) * 1999-06-04 2016-05-11 Semiconductor Energy Laboratory Co., Ltd. Dispositif électro-optique et appareil électronique
US9123854B2 (en) 1999-06-04 2015-09-01 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US8853696B1 (en) 1999-06-04 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US7642559B2 (en) 1999-06-04 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and electronic device
US6366017B1 (en) 1999-07-14 2002-04-02 Agilent Technologies, Inc/ Organic light emitting diodes with distributed bragg reflector
DE10044841B4 (de) * 2000-09-11 2006-11-30 Osram Opto Semiconductors Gmbh Plasmaverkapselung für elektronische und mikroelektronische Bauelemente wie OLEDs sowie Verfahren zu dessen Herstellung
US6933538B2 (en) 2000-09-11 2005-08-23 Osram Opto Semiconductors Gmbh Plasma encapsulation for electronic and microelectronic components such as organic light emitting diodes
US6537688B2 (en) 2000-12-01 2003-03-25 Universal Display Corporation Adhesive sealed organic optoelectronic structures
US6614057B2 (en) 2001-02-07 2003-09-02 Universal Display Corporation Sealed organic optoelectronic structures
US6576351B2 (en) 2001-02-16 2003-06-10 Universal Display Corporation Barrier region for optoelectronic devices
US6624568B2 (en) 2001-03-28 2003-09-23 Universal Display Corporation Multilayer barrier region containing moisture- and oxygen-absorbing material for optoelectronic devices
US6664137B2 (en) 2001-03-29 2003-12-16 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
US7683534B2 (en) 2001-03-29 2010-03-23 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
US7187119B2 (en) 2001-03-29 2007-03-06 Universal Display Corporation Methods and structures for reducing lateral diffusion through cooperative barrier layers
EP1283554A3 (fr) * 2001-08-06 2005-08-24 Philips Intellectual Property & Standards GmbH Dispositif d'affichage électroluminescent organique avec couche protectrice
US6888307B2 (en) 2001-08-21 2005-05-03 Universal Display Corporation Patterned oxygen and moisture absorber for organic optoelectronic device structures
US8445937B2 (en) 2003-05-16 2013-05-21 E I Du Pont De Nemours And Company Barrier films for plastic substrates fabricated by atomic layer deposition
WO2004105149A1 (fr) * 2003-05-16 2004-12-02 E.I. Dupont De Nemours And Company Films barrieres pour substrats en plastique fabriques par depot de couches atomiques
DE102004049955B4 (de) * 2004-10-13 2008-12-04 Schott Ag Verfahren zur Herstellung eines optischen Bauelements, insbesondere einer OLED
WO2017206440A1 (fr) 2016-05-30 2017-12-07 Boe Technology Group Co., Ltd. Panneau d'affichage, appareil d'affichage le comprenant et procédé de fabrication associé
EP3465792A4 (fr) * 2016-05-30 2020-01-22 BOE Technology Group Co., Ltd. Panneau d'affichage, appareil d'affichage le comprenant et procédé de fabrication associé

Also Published As

Publication number Publication date
CA2295676A1 (fr) 1999-01-21
EP1021255A1 (fr) 2000-07-26

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