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WO1998036449A1 - Gaz d'attaque et de nettoyage - Google Patents

Gaz d'attaque et de nettoyage Download PDF

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Publication number
WO1998036449A1
WO1998036449A1 PCT/JP1998/000496 JP9800496W WO9836449A1 WO 1998036449 A1 WO1998036449 A1 WO 1998036449A1 JP 9800496 W JP9800496 W JP 9800496W WO 9836449 A1 WO9836449 A1 WO 9836449A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
gas
general formula
integer
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP1998/000496
Other languages
English (en)
Japanese (ja)
Inventor
Mitsushi Itano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd filed Critical Daikin Industries Ltd
Publication of WO1998036449A1 publication Critical patent/WO1998036449A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only

Definitions

  • the present invention relates to an etching gas and a cleaning gas suitable for semiconductor manufacturing applications.
  • Perfluorinated compounds such as CF 4 , C 2 F 6 , C 4 F 8 ( ⁇ .-fluoro ⁇ sig ⁇ f, tan) and SF 6 are used in large quantities in the semiconductor production process as cleaning gas for cleaning gas and plasma CVD. Used for These are long life stable compounds in the air, fried infrared absorbance is high, global warming potential than carbon dioxide gas, 6300-fold with CF 4, Ji 2? 6 12500 times, C 4 F e but 9100-fold, SF 6 is very large as 24900 times, the development of low alternative gas global warming potential has become an urgent issue.
  • An object of the present invention is to provide an alternative gas which is suitable as an etching gas and a plasma CVD cleaning gas used in a semiconductor production process and has a small global warming effect.
  • the present invention provides the following etching gas and cleaning gas.
  • n and X each represent an integer of 1 to 5; m and y each represent an integer of 0 to 11 (however, m and y are not simultaneously 0); 1 and z each represent an integer of 0 to 11 (however, 1 and z are not simultaneously 0)];
  • a represents an integer of 1 to 3.
  • n, x, m, y, 1, and z are the same as above;
  • a represents an integer of 1 to 3.
  • the present invention relates to the following etching method and cleaning method.
  • At least one gas selected from the group consisting of the fluorine-based compounds represented by the general formulas (1), (2) and (3) can be used.
  • Preferred compounds among the fluorine compounds represented by the general formula (1) are HCF 20 CF 2 CF 3 , CF 3 OCF 2 CF 2 H, HCF 2 OCF 2 CF 2 H, CF 3 CF 2 OCFHCF 3 , CF 3 CF 2 Gases such as OCF 2 CF 2 H, CF 3 CFHCF 20 CH 3 , CF 3 CF 2 CF 2 OCFHCF 3 are also used, and these can be used alone or in combination of two. .
  • the etching gas of the invention He, N e, A r , single gas such as H 2> N 2, O 2 , C Compound gases such as H 4 , C 2 H 6 and NH 3 may be mixed and used at an appropriate ratio.
  • the etching method of the present invention is performed under various dry etching conditions such as plasma etching, reactive ion etching, and microphone mouth-wave etching.
  • Examples of the film to be processed on the substrate processed by the etching method of the present invention include a Si film, a SiO 2 film, a Si 3 N 4 film, and a refractory metal silicite film.
  • the etching gas of the present invention has high precision and high selectivity, and has reached a practical level as a substitute for CF "C 2 F 6 , C 4 F 8 , SF 6 which has been widely used as an etching gas in the past.
  • the etching gas of the present invention has a sufficiently low global warming potential as compared with CF 4 , C 2 F 6 , C 4 F 8 and SF 6 .
  • the gas of the general formulas (1) to (3) exemplified above as the etching gas or the gas specifically exemplified above. Regardless of which etching gas is used, the dimensional accuracy of the pattern is similarly high and the selectivity to the layer to be processed is high, so that it can be used without any practical problems.
  • At least one kind of gas selected from the group consisting of the fluorine compounds represented by the above general formulas (1), (2) and (3) can be used.
  • Preferred compounds among the fluorine compounds represented by the above general formula (1) are HCF 2 0 CF 2 CF 3 , CF3OCF2CF2H, HCF2OCF2CF2H.CF 3 C F2OC FHC F 3, CF 3 C F2OC F 2 CF 2 H, CF 3 Gases such as CFHCF 2 OCH 3 and CF 3 CF 2 CF 20 CFHCF 3 are also used for L and deviation, and these can be used alone or in combination of two. Monkey
  • CF3COOCH2CF3, CF 3 CF 2 COOCH 2 CF 3, CF 3 CF 2 CF 2 C 0 OCH 2 CF 3 use gas such that both t, is, they can be used singly or in combination of two or more.
  • Chamber cleaning gas of the present invention He, N e, A r , H 2, N 2, O 2 alone gas may be used in combination, such as.
  • a known material such as stainless steel and A1 alloy may be used as a material of the chamber.
  • the chamber cleaning gas of the present invention can quickly remove reaction by-products adhering to the chamber without damaging these materials used for the chamber.
  • the chamber cleaning gas of the present invention is at a level that can be used sufficiently as a substitute for CF 4 , C 2 F 6 , and SF 6 conventionally used as a chamber cleaning gas. Moreover, the chamber cleaning gas of the present invention has a sufficiently low global warming potential as compared with CF 4 , C 2 F 6 and SF 6 .
  • the object can be removed sufficiently and quickly, and the chamber can be used practically without damaging the chamber.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

L'invention concerne un gaz d'attaque et de nettoyage de chambre pour des films de Si, SiO2, Si3N4 ou de silicite métallique à haut point de fusion, qui contient au moins un composé de fluor gazeux sélectionné dans le groupe comprenant les composés des formules (1) à (3): (1) CnFmHlOCxFyHz, (dans laquelle n et x représentent chacun un entier compris entre 1 et 5; m, y, l et z représentent chacun un entier compris entre 0 et 11; à condition que m et y, ou l et z ne valent pas 0 en même temps), (2) CaF2a+1OCF=CF2, et (3) CaF2a+1COOCH2CF3, (dans lesquelles a représente un entier compris entre 1 et 3). Ce gaz d'attaque et de nettoyage de chambre ne provoque pas de réchauffement général de la planète.
PCT/JP1998/000496 1997-02-12 1998-02-05 Gaz d'attaque et de nettoyage Ceased WO1998036449A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2738297A JPH10223614A (ja) 1997-02-12 1997-02-12 エッチングガスおよびクリーニングガス
JP9/27382 1997-02-12

Publications (1)

Publication Number Publication Date
WO1998036449A1 true WO1998036449A1 (fr) 1998-08-20

Family

ID=12219507

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1998/000496 Ceased WO1998036449A1 (fr) 1997-02-12 1998-02-05 Gaz d'attaque et de nettoyage

Country Status (2)

Country Link
JP (1) JPH10223614A (fr)
WO (1) WO1998036449A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999034427A1 (fr) * 1997-12-31 1999-07-08 Alliedsignal Inc. Composes de gravure hydrofluorocarbones a effet de serre reduit
WO2002005338A1 (fr) * 2000-07-07 2002-01-17 Research Institute Of Innovative Technology For The Earth Gaz de nettoyage et gaz d'attaque
US6352081B1 (en) 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
WO2002021586A1 (fr) * 2000-09-07 2002-03-14 Daikin Industries, Ltd. Gaz d'attaque à sec et procédé correspondant
WO2002073675A1 (fr) * 2001-03-14 2002-09-19 Tokyo Electron Limited Procede de nettoyage pour dispositif de traitement de substrat et dispositif de traitement de substrat
US6849194B2 (en) 2000-11-17 2005-02-01 Pcbu Services, Inc. Methods for preparing ethers, ether compositions, fluoroether fire extinguishing systems, mixtures and methods
EP1318542A4 (fr) * 2000-09-11 2006-10-25 Nat Inst Of Advanced Ind Scien Gaz de nettoyage et gaz d'attaque
JPWO2016068004A1 (ja) * 2014-10-30 2017-08-10 日本ゼオン株式会社 プラズマエッチング方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2013203938B2 (en) * 2004-04-29 2014-09-25 Honeywell International, Inc. Compositions containing fluorine substituted olefins
CN101925983A (zh) 2007-12-21 2010-12-22 苏威氟有限公司 用于生产微机电系统的方法
BRPI0822196A2 (pt) * 2008-01-23 2015-06-23 Solvay Fluor Gmbh Métodos para fabricar uma célula solar a partir de uma pastilha de silício e visores de painel plano, célula solar, e, painel solar
JP4596287B2 (ja) * 2008-09-19 2010-12-08 カシオ計算機株式会社 シリコンを含む膜のドライエッチング方法
TW201123293A (en) * 2009-10-26 2011-07-01 Solvay Fluor Gmbh Etching process for producing a TFT matrix
EP2511948A4 (fr) 2010-02-01 2014-07-02 Central Glass Co Ltd Agent de gravure à sec et procédé de gravure à sec l'utilisant
JP5434970B2 (ja) 2010-07-12 2014-03-05 セントラル硝子株式会社 ドライエッチング剤
JP5454411B2 (ja) * 2010-08-06 2014-03-26 カシオ計算機株式会社 シリコンを含む膜のドライエッチング方法
JP2013030531A (ja) 2011-07-27 2013-02-07 Central Glass Co Ltd ドライエッチング剤
US10607850B2 (en) 2016-12-30 2020-03-31 American Air Liquide, Inc. Iodine-containing compounds for etching semiconductor structures
KR102303686B1 (ko) 2017-02-28 2021-09-17 샌트랄 글래스 컴퍼니 리미티드 드라이 에칭제, 드라이 에칭 방법 및 반도체 장치의 제조방법
US20240290628A1 (en) * 2023-02-24 2024-08-29 American Air Liquide, Inc. Etching method using oxygen-containing hydrofluorocarbon
US20240290627A1 (en) * 2023-02-24 2024-08-29 American Air Liquide, Inc. Etching method using oxygen-containing hydrofluorocarbon

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04239723A (ja) * 1991-01-23 1992-08-27 Nec Corp 半導体装置の製造方法
JPH04346427A (ja) * 1991-05-24 1992-12-02 Sony Corp ドライエッチング方法
JPH06151383A (ja) * 1992-11-12 1994-05-31 Mitsubishi Electric Corp 高誘電率を有する多元系酸化物膜のエッチング方法、高融点金属含有膜のエッチング方法、薄膜キャパシタ素子の製造方法およびその方法を実施するためのプラズマ処理装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04239723A (ja) * 1991-01-23 1992-08-27 Nec Corp 半導体装置の製造方法
JPH04346427A (ja) * 1991-05-24 1992-12-02 Sony Corp ドライエッチング方法
JPH06151383A (ja) * 1992-11-12 1994-05-31 Mitsubishi Electric Corp 高誘電率を有する多元系酸化物膜のエッチング方法、高融点金属含有膜のエッチング方法、薄膜キャパシタ素子の製造方法およびその方法を実施するためのプラズマ処理装置

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999034427A1 (fr) * 1997-12-31 1999-07-08 Alliedsignal Inc. Composes de gravure hydrofluorocarbones a effet de serre reduit
US6120697A (en) * 1997-12-31 2000-09-19 Alliedsignal Inc Method of etching using hydrofluorocarbon compounds
US6428716B1 (en) 1997-12-31 2002-08-06 Alliedsignal Inc. Method of etching using hydrofluorocarbon compounds
US6352081B1 (en) 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
WO2002005338A1 (fr) * 2000-07-07 2002-01-17 Research Institute Of Innovative Technology For The Earth Gaz de nettoyage et gaz d'attaque
WO2002021586A1 (fr) * 2000-09-07 2002-03-14 Daikin Industries, Ltd. Gaz d'attaque à sec et procédé correspondant
JP5407101B2 (ja) * 2000-09-07 2014-02-05 ダイキン工業株式会社 ドライエッチングガスおよびドライエッチング方法
US7931820B2 (en) 2000-09-07 2011-04-26 Daikin Industries, Ltd. Dry etching gas and method for dry etching
KR100727834B1 (ko) * 2000-09-07 2007-06-14 다이킨 고교 가부시키가이샤 드라이 에칭 가스 및 드라이 에칭 방법
EP1318542A4 (fr) * 2000-09-11 2006-10-25 Nat Inst Of Advanced Ind Scien Gaz de nettoyage et gaz d'attaque
US6849194B2 (en) 2000-11-17 2005-02-01 Pcbu Services, Inc. Methods for preparing ethers, ether compositions, fluoroether fire extinguishing systems, mixtures and methods
US6893964B2 (en) 2001-03-14 2005-05-17 Tokyo Electron Limited Cleaning method for substrate treatment device and substrate treatment device
WO2002073675A1 (fr) * 2001-03-14 2002-09-19 Tokyo Electron Limited Procede de nettoyage pour dispositif de traitement de substrat et dispositif de traitement de substrat
JPWO2016068004A1 (ja) * 2014-10-30 2017-08-10 日本ゼオン株式会社 プラズマエッチング方法
US20170243756A1 (en) * 2014-10-30 2017-08-24 Zeon Corporation Plasma etching method

Also Published As

Publication number Publication date
JPH10223614A (ja) 1998-08-21

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