WO1998028395A1 - Formulations including a 1,3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates - Google Patents
Formulations including a 1,3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates Download PDFInfo
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- WO1998028395A1 WO1998028395A1 PCT/US1997/023917 US9723917W WO9828395A1 WO 1998028395 A1 WO1998028395 A1 WO 1998028395A1 US 9723917 W US9723917 W US 9723917W WO 9828395 A1 WO9828395 A1 WO 9828395A1
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- pentanedione
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- H10P70/273—
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/264—Aldehydes; Ketones; Acetals or ketals
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/266—Esters or carbonates
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
Definitions
- the present invention relates generally to chemical formulations used in semiconductor wafer fabrication and particularly to chemical formulations that are utilized to remove residue from wafers following a resist plasma ashing step.
- the prior art teaches the utilization of various chemical formulations to remove residue and clean wafers following a resist ashing step.
- Some of these prior art chemical formulations include akaline compositions containing amines and/or tetraalkyl ammonium hydroxides, water and/or other solvents, and chelating agents.
- the various prior art formulations have drawbacks which include unwanted removal of metal or insulator layers and the corrosion of desirable metal layers, particularly aluminum and aluminum-copper alloys and titanium nitride features.
- a semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
- a polar organic solvent 2-98% It is an advantage of the present invention that it effectively removes inorganic residues following a plasma ashing step.
- the present invention comprises formulations that are suitable for stripping inorganic wafer residues which originate from high density plasma etching followed by ashing with oxygen-containing plasmas.
- the formulations contain 1, 3-dicarbonyl compounds and/or other metal chelating agents, amines, and water or another solvent as primary ingredients.
- the preferred formulations utilize the following components (percentages are by weight):
- a second or alternative chelating agent 0-25%
- a polar organic solvent 2-98%
- the preferred amines are:
- the preferred solvents are:
- NMP N-Methylpyrrolidone
- the preferred secondary or alternative chelating agents that are utilized in some of the formulations are:
- 1,3-dicarbonyl compounds and/or other metal-chelating agents in combination with amines and a solvent are unique features of the invention. These formulations provided better stripping performance and less corrosivity than traditional formulations 3 o containing catechol, amine, and solvent.
- R is either a Hydrogen atom or an aliphatic group
- X and Y are functional groups containing multiply bonded moities known to have electron-withdrawing properties, for example X and Y may be CONH 2 CONHR', CN, NO 2 , SOR', SO 2 Z in which R' represents an alkyl group and Z represents another atom or group.
- X o and Y may be identical or different.
- dialkyldithiocarbamates are expected to function similarly to ammonium pyrrolidinedithiocarbamate.
- formulations of the present invention are particularly useful on wafers which have 0 been etched with chlorine- or fluorine-containing plasmas followed by oxygen plasma ashing.
- the residues generated by this type of processing typically contain inorganic materials such as, but not limited to. aluminum oxide and titanium oxide. These residues are often difficult to dissolve completely without causing corrosion of metal and titanium nitride features required for effective device performance.
- Four types of commercially generated wafers containing vias and metal lines were evaluated using the formulations of the present invention. In each case, following plasma etching and ashing the residue was removed from the wafer by immersion of the wafer in a formulation bath at 60° C for 30 minutes followed by washing with deionized water and drying with a stream of nitrogen gas. It is expected by the inventors that the formulations can also be applied by spraying onto the wafers in an automated spray tool followed by a water rinse.
- the four via and line structures were:
- One micron diameter, two-layer vias comprised of a top layer of silicon oxide (7000 Angs. thick) and a middle layer of titanium nitride (1200 Angs. thick) on top of a silicon substrate.
- Titanium 500 Angs. thick
- silicon oxide substrate 500 Angs. thick
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- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
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Abstract
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown: an organic amine 2-98 %; water 0-50 %; a 1,3-dicarbonyl compound chelating agent 0.1-60 %; a second or alternative chelating agent 0-25 %; a polar organic solvent 2-98 %.
Description
Specification
FORMULATIONS INCLUDING A 1,3-DICARBONYL COMPOUND CHELATING AGENT FOR STRIPPING RESIDUES FROM SEMICONDUCTOR SUBSTRATES
BACKGROUND OF THE INVENTION
Field of the Invention The present invention relates generally to chemical formulations used in semiconductor wafer fabrication and particularly to chemical formulations that are utilized to remove residue from wafers following a resist plasma ashing step.
Description of the Prior Art The prior art teaches the utilization of various chemical formulations to remove residue and clean wafers following a resist ashing step. Some of these prior art chemical formulations include akaline compositions containing amines and/or tetraalkyl ammonium hydroxides, water and/or other solvents, and chelating agents. The various prior art formulations have drawbacks which include unwanted removal of metal or insulator layers and the corrosion of desirable metal layers, particularly aluminum and aluminum-copper alloys and titanium nitride features.
There is therefore a need for chemical formulations which effectively remove residue following a resist ashing step which do not attack and potentially degrade delicate structures which are meant to remain on a wafer.
SUMMARY OF THE INVENTION
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
An organic amine 2-98% Water 0-50%
A 1,3-dicarbonyl compound chelating agent 0.1-60%
A second or alternative chelating agent 0-25%)
A polar organic solvent 2-98%
It is an advantage of the present invention that it effectively removes inorganic residues following a plasma ashing step.
It is another advantage of the present invention that it effectively removes metal halide and metal oxide residues following plasma ashing. These and other features and advantages of the present invention will become understood to those of ordinary skill in the art upon review of the following detailed description of the preferred embodiments.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention comprises formulations that are suitable for stripping inorganic wafer residues which originate from high density plasma etching followed by ashing with oxygen-containing plasmas.
The formulations contain 1, 3-dicarbonyl compounds and/or other metal chelating agents, amines, and water or another solvent as primary ingredients. The preferred formulations utilize the following components (percentages are by weight):
An organic amine 2-98%
Water 0-50%
A 1 ,3-dicarbonyl compound chelating agent 0.1 -60%
A second or alternative chelating agent 0-25% A polar organic solvent 2-98%
The preferred amines are:
Pentamethyldiethylenetriamine (PMDETA) 5-95%
Triethanolamine (TEA) 5-95%
Other amines that are effective are:
Diazabicyclo (2.2.2) octane
Diethylenetriamine
3,3'-Iminobis (N,N-dimethylpropylamine) N-Methylimidazole
Tetraethylenepentamine Triethylenetetramine Trimethoxyethoxyethylamine Diethanolamine Methyldiethanolamine
Tetramethylhexanediamine N, N-Diethvlethanolamine
The preferred 1,3-dicarbonyl compound chelating agents are:
2,4-Pentanedione 2-90%
Methyl acetoacetate 15-70%)
Dimethylmalonate 10-48.3%
Other 1, 3-dicarbonyl compounds which may be utilized are:
N-Methylacetoacetamide Acetoacetamide l o Malonamide
The preferred solvents are:
Water 0-50%
Ethylene glycol 0-74%
15 N-Methylpyrrolidone (NMP) 0-49%
Sulfolane 0-10%
The preferred secondary or alternative chelating agents that are utilized in some of the formulations are:
2 o Ammonium pyrrolidinedithiocarbamate 0-25%>
Ammonium carbamate 0-15%
Ammonium oxalate 0-15%
Ammonium thiocyanate 0-15%
Ammonium thiosulfate 0-15%
25 Trifluoroacetic acid 0-12%
The utilization of 1,3-dicarbonyl compounds and/or other metal-chelating agents in combination with amines and a solvent are unique features of the invention. These formulations provided better stripping performance and less corrosivity than traditional formulations 3 o containing catechol, amine, and solvent.
Examples of the preferred formulations are:
PMDETA 40-55%
2,4-Pentanedione 15-20%
Water 26.7-45%
35
TEA 40%
2,4-Pentanedione 15%
Water 45%
PMDETA 11.7-40%
2.4-Pentanedione 15-40%
Ethylene glycol 45-48.3%
PMDETA 11.7%
2,4-Pentanedione 40%
NMP 48.3%
The inventors expect that other closely related ingredients would be expected to show comparable performance to those utilized in the preferred formulations. These include:
A. Other tertiary organic amines are expected to be suitable:
B. Other 1,3-dicarbonyl compounds and related compounds are expected to display comparable performance. These would have the following general structure: 5 X-CHR-Y in which
R is either a Hydrogen atom or an aliphatic group and
X and Y are functional groups containing multiply bonded moities known to have electron-withdrawing properties, for example X and Y may be CONH2 CONHR', CN, NO2, SOR', SO2Z in which R' represents an alkyl group and Z represents another atom or group. X o and Y may be identical or different.
C. Other carbamate salts are expected to function similarly to ammonium carbamate.
D. Other dialkyldithiocarbamates are expected to function similarly to ammonium pyrrolidinedithiocarbamate.
E. Other polar organic solvents are expected to be suitable either alone or when 5 mixed with water.
F. It would also be expected that inclusion of optional components such as surfactants, stabilizers, corrosion inhibitors, buffering agents, and cosolvents would constitute obvious additions to those practiced in the art.
The formulations of the present invention are particularly useful on wafers which have 0 been etched with chlorine- or fluorine-containing plasmas followed by oxygen plasma ashing.
The residues generated by this type of processing typically contain inorganic materials such as, but not limited to. aluminum oxide and titanium oxide. These residues are often difficult to dissolve completely without causing corrosion of metal and titanium nitride features required for effective device performance.
Four types of commercially generated wafers containing vias and metal lines were evaluated using the formulations of the present invention. In each case, following plasma etching and ashing the residue was removed from the wafer by immersion of the wafer in a formulation bath at 60° C for 30 minutes followed by washing with deionized water and drying with a stream of nitrogen gas. It is expected by the inventors that the formulations can also be applied by spraying onto the wafers in an automated spray tool followed by a water rinse. The four via and line structures were:
1. 0.8 micron diameter, four layer vias comprised of silicon oxide top and second layers, a third layer of titanium nitride, and a bottom layer of aluminum, silicon, copper (AlSiCu) alloy. The substrate was silicon oxide.
2. One micron diameter, two-layer vias comprised of a top layer of silicon oxide (7000 Angs. thick) and a middle layer of titanium nitride (1200 Angs. thick) on top of a silicon substrate.
3. 1.2 micron wide, 4-layer metal lines with a top layer of Titanium/Tungsten (6000 Angs. thick), a third layer of Titanium/Tungsten (1200 Angs thick), and a bottom layer of
Titanium (500 Angs. thick) on a silicon oxide substrate.
4. Two microns wide, 3-layer metal lines with a top layer of Titanium (200 Angs. thick), a middle layer of Aluminum/Silicon/Copper (750 Angs. thick), and a bottom layer of Titanium/Tungsten (1250 Angs. thick) on a silicon oxide substrate. The present invention formulations were rated for relative stripping effectiveness and corrosivity. The preferred formulations scored best and, in overall performance based on both stripping effectiveness and low corrosivity, are approximately equal.
While the present invention has been described with reference to certain preferred embodiments, it will be understood by those skilled in the art that various alterations and modifications may be made therein without departing from the true spirit and scope of the invention. It is therefore intended that the following claims cover all such alterations and modifications which nevertheless include the true spirit and scope of the invention.
What I claim is:
Claims
1. A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:
An organic amine 2-98%,
Water 0-50%
A 1,3-dicarbonyl compound chelating agent 0.1-60%
A second or alternative chelating agent 0-25%
A polar organic solvent 2-98%
2. A cleaning formulation as described in claim 1 wherein said organic amine is chosen from the group consisting of:
Pentamethyldiethylenetriamine (PMDETA) 5-95%
Triethanolamine (TEA) 5-95%.
3. A cleaning formulation as described in claim 1 wherein said 1.3-dicarbonyl compound chelating agent is chosen from the group consisting of:
2,4-Pentanedione 2-90%
Methyl acetoacetate 15-70%
Dimethylmalonate 10-48.3%
4. A cleaning formulation as described in claim 1 wherein said polar organic solvent is chosen from the group consisting of:
Ethylene glycol 0-74%
N-Methylpyrrolodone (NMP) 0-49%
Sulfolane 0-10%
5. A cleaning formulation as described in claim 1 wherein said secondary or alternative chelating agent is chosen from the group consisting of:
Ammonium pyrrolidinedithiocarbamate 0-25%
Ammonium carbamate 0-15%
Ammonium oxalate 0-15%
Ammonium thiocyanate 0-15%
Ammonium thiosulfate 0- 15%
Trifluoroacetic acid 0-12%
6. A cleaning formulation as described in claim 1 wherein said organic amine is chosen from the group consisting of:
Pentamethyldiethylenetriamine (PMDETA) Triethanolamine (TEA) Diazabicyclo (2.2.2) octane
Diethylenetriamine
3 ,3 '-Iminobis (N,N-dimethylpropylamine)
N-Methylimidazole
Tetraethylenepentamine Triethylenetetramine
Trimethoxyethoxyethylamine
Diethanolamine
Methyldiethanolamine
Tetramethylhexanediamine N, N-Diethylethanolamine.
7. A cleaning formulation as described in claim 1 wherein said 1,3-dicarbonyl compound chelating agent is chosen from the group consisting of:
2,4-Pentanedione Methyl acetoacetate Dimethylmalonate
N-Methylacetoacetamide
Acetoacetamide
Malonamide
8. A cleaning formulation as described in claim 1 wherein said organic amine is chosen from the group consisting of:
Pentamethyldiethylenetriamine (PMDETA) 5-95%
Triethanolamine (TEA) 5-95%
said 1.3-dicarbonyl compound chelating agent is chosen from the group consisting of:
2,4-Pentanedione 2-90%
Methyl acetoacetate 15-70% Dimethylmalonate 10-48.3%
and said polar organic solvent is chosen from the group consisting of:
Ethylene glycol 0-74% N-Methylpyrrolodone (NMP) 0-49%
Sulfolane 0-10%
9. A cleaning formulation as described in claim 1 wherein said chelating agent would have the following general structure:
X-CHR-Y in which
R is either a hydrogen atom or an aliphatic group and X and Y are functional groups containing multiply bonded moities known to have electron-withdrawing properties, wherein X and Y may be CONH2, CONHR', CN, NO2, SOR'. SO2Z in which R' represents an alkyl group and Z represents another atom or group, and wherein X and Y may be identical or different.
10. A cleaning formulation as described in claim 1 being comprised of:
PMDETA 40-55%
2,4-Pentanedione 15-20%
Water 26.7-45%
1 1. A cleaning formulation as described in claim 1 being comprised of: TEA 40% 2,4-Pentanedione 15%>
Water 45%
12. A cleaning formulation as described in claim 1 being comprised of:
PMDETA 11.7-40%
2,4-Pentanedione 15-40% Ethylene glycol 45-48.3%
13. A cleaning formulation as described in claim 1 being comprised of:
PMDETA 11.7%
2,4-Pentanedione 40% NMP 48.3%
14. A method for fabricating a semiconductor wafer including the steps comprising: plasma etching a metalized layer from a surface of the wafer; plasma ashing a resist from the surface of the wafer following the metal etching step; cleaning the wafer in the following step using a chemical formulation including the following components in the percentage by weight ranges shown:
An organic amine 2-98%
Water 0-50%
A 1 ,3-dicarbonyl compound chelating agent 0.1 -60%
A second or alternative chelating agent 0-25% A polar organic solvent 2-98%
15. A method as described in claim 14 wherein said organic amine is chosen from the group consisting of:
Pentamethyldiethylenetriamine (PMDETA) 5-95% Triethanolamine (TEA) 5-95%.
16. A method as described in claim 14 wherein said 1,3-dicarbonyl compound chelating agent is chosen from the group consisting of:
2,4-Pentanedione 2-90% Methyl acetoacetate 15-70%
Dimethylmalonate 10-48.3%
17. A method as described in claim 14 wherein said polar organic solvent is chosen from the group consisting of:
Ethylene glycol 0-74%
N-Methylpyrrolodone (NMP) 0-49%
Sulfolane 0-10%
18. A method as described in claim 14 wherein said second or alternative chelating agent is chosen from the group consisting of:
Ammonium pyrrolidinedithiocarbamate 0-25%>
Ammonium carbamate 0- 15% Ammonium oxalate 0-15%
Ammonium thiocyanate 0- 15%
Ammonium thiosulfate 0-15%
Trifluoroacetic acid 0-12%
19. A method as described in claim 14 wherein said organic amine is chosen from the group consisting of:
Pentamethyldiethylenetriamine (PMDETA)
Triethanolamine (TEA) Diazabicyclo (2.2.2) octane
Diethylenetriamine
3,3'-Iminobis (N,N-dimethylpropylamine)
N-Methylimidazole
Tetraethylenepentamine Triethylenetetramine
Trimethoxyethoxyethylamine
Diethanolamine
Methyldiethanolamine
Tetramethylhexanediamine N, N-Diethylethanolamine.
20. A method as described in claim 14 wherein said 1,3-dicarbonyl compound chelating agent is chosen from the group consisting of:
2,4-Pentanedione Methyl acetoacetate
Dimethylmalonate N-Methylacetoacetamide Acetoacetamide Malonamide.
21. A method as described in claim 14 wherein said organic amine is chosen from the group consisting of:
Pentamethyldiethylenetriamine (PMDETA) 5-95%
Triethanolamine (TEA) 5-95%.
said 1,3-dicarbonyl compound chelating agent is chosen from the group consisting of:
2,4-Pentanedione 2-90%
Methyl acetoacetate 15-70% Dimethylmalonate 10-48.3% and said polar organic solvent is chosen from the group consisting of:
Ethylene glycol 0-74%
N-Methylpyrrolodone (NMP) 0-49%
Sulfolane 0-10%
22. A method as described in claim 14 wherein said chelating agent would have the following general structure: X-CHR-Y in which
R is either a hydrogen atom or an aliphatic group and
X and Y are functional groups containing multiply bonded moities known to have
electron-withdrawing properties, wherein X and Y may be CONH2 CONHR', CN, NO2, SOR', SO2Z in which R' represents an alkyl group and Z represents another atom or group and wherein
X and Y may be identical or different.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52907198A JP4386968B2 (en) | 1996-12-24 | 1997-12-23 | Formulation comprising a 1,3-dicarbonyl compound chelator for stripping residues from a semiconductor substrate |
| US09/331,537 US6211126B1 (en) | 1997-12-23 | 1997-12-23 | Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US3414496P | 1996-12-24 | 1996-12-24 | |
| US60/034,144 | 1996-12-24 | ||
| US4482697P | 1997-04-25 | 1997-04-25 | |
| US60/044,826 | 1997-04-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1998028395A1 true WO1998028395A1 (en) | 1998-07-02 |
Family
ID=26710611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1997/023917 Ceased WO1998028395A1 (en) | 1996-12-24 | 1997-12-23 | Formulations including a 1,3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4386968B2 (en) |
| WO (1) | WO1998028395A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000042646A1 (en) * | 1999-01-13 | 2000-07-20 | Infineon Technologies Ag | Method for structuring a layer |
| US6211126B1 (en) * | 1997-12-23 | 2001-04-03 | Advanced Technology Materials, Inc. | Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates |
| US6566315B2 (en) | 2000-12-08 | 2003-05-20 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
| US6660700B2 (en) | 1999-08-20 | 2003-12-09 | Advanced Technologies Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
| US7534752B2 (en) * | 1996-07-03 | 2009-05-19 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
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| JPH08917B2 (en) * | 1990-06-27 | 1996-01-10 | 花王株式会社 | Detergent composition |
| JP3048207B2 (en) * | 1992-07-09 | 2000-06-05 | イー．ケー．シー．テクノロジー．インコーポレイテッド | Detergent composition containing nucleophilic amine compound having reduction and oxidation potential and method for cleaning substrate using the same |
| JPH07173660A (en) * | 1993-12-20 | 1995-07-11 | Matsushita Electric Ind Co Ltd | Dry finishing method for metal parts |
| US5561105A (en) * | 1995-05-08 | 1996-10-01 | Ocg Microelectronic Materials, Inc. | Chelating reagent containing photoresist stripper composition |
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- 1997-12-23 WO PCT/US1997/023917 patent/WO1998028395A1/en not_active Ceased
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4431457A (en) * | 1982-06-29 | 1984-02-14 | Phillips Petroleum Company | Process for cleaning metal surfaces of poly(arylene sulfide) deposits |
| JPH03219000A (en) * | 1989-11-09 | 1991-09-26 | Nippon Steel Corp | Etching method and washing method for silicon wafer |
| US5236552A (en) * | 1992-04-13 | 1993-08-17 | At&T Bell Laboratories | Photoresist stripping method |
| EP0680078A2 (en) * | 1994-03-28 | 1995-11-02 | Mitsubishi Gas Chemical Company, Inc. | Semiconductor substrate surface treatment |
| US5719253A (en) * | 1994-10-07 | 1998-02-17 | Unitika Ltd. | Poly(amic acid) solution and polyimide film or polymide-coated material obtained therefrom |
| WO1997005228A1 (en) * | 1995-07-27 | 1997-02-13 | Mitsubishi Chemical Corporation | Method for treating surface of substrate and surface treatment composition therefor |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7534752B2 (en) * | 1996-07-03 | 2009-05-19 | Advanced Technology Materials, Inc. | Post plasma ashing wafer cleaning formulation |
| US6211126B1 (en) * | 1997-12-23 | 2001-04-03 | Advanced Technology Materials, Inc. | Formulations including a 1, 3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates |
| WO2000042646A1 (en) * | 1999-01-13 | 2000-07-20 | Infineon Technologies Ag | Method for structuring a layer |
| US6660700B2 (en) | 1999-08-20 | 2003-12-09 | Advanced Technologies Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
| US6566315B2 (en) | 2000-12-08 | 2003-05-20 | Advanced Technology Materials, Inc. | Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001507073A (en) | 2001-05-29 |
| JP4386968B2 (en) | 2009-12-16 |
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