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WO1998021756A1 - Element de detection - Google Patents

Element de detection Download PDF

Info

Publication number
WO1998021756A1
WO1998021756A1 PCT/EP1996/004947 EP9604947W WO9821756A1 WO 1998021756 A1 WO1998021756 A1 WO 1998021756A1 EP 9604947 W EP9604947 W EP 9604947W WO 9821756 A1 WO9821756 A1 WO 9821756A1
Authority
WO
WIPO (PCT)
Prior art keywords
sensor element
floating gate
sensor
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP1996/004947
Other languages
German (de)
English (en)
Inventor
Amer Aslam
Bedrich Hosticka
Werner Brockherde
Michael Schanz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to EP96939013A priority Critical patent/EP0922304B1/fr
Priority to PCT/EP1996/004947 priority patent/WO1998021756A1/fr
Priority to DE59608775T priority patent/DE59608775D1/de
Priority to US09/297,925 priority patent/US6141243A/en
Priority to JP52206598A priority patent/JP3269826B2/ja
Priority to KR1019997004212A priority patent/KR100319057B1/ko
Publication of WO1998021756A1 publication Critical patent/WO1998021756A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/124—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the present invention relates to a monolithically integrated sensor element which has a field effect transistor which is sensitive to a physical variable to be detected and a non-volatile memory.
  • the object of the present invention is to create a space-saving sensor element with associated non-volatile memory, which furthermore does not cause any fluctuations in the parameters due to the manufacture Adaptation problems exist between the sensor and memory cell.
  • the present invention provides a sensor element in the form of a field effect transistor which is sensitive to a physical variable to be detected and whose gate electrode is designed as a floating gate.
  • the gate electrode of the transistor is designed as a floating gate, the same can be used both for setting the operating point of the transistor and for storing a charge which corresponds to a physical variable detected by the field effect transistor.
  • the field effect transistor is connected to a comparator and a programming unit for the EEPROM, which is formed by the floating gate.
  • the non-volatile memory formed by the floating gate of the sensor element according to the invention can be used to set the operating point of the field effect transistor which is sensitive to a physical variable to be detected, to store coefficients for further signal processing or to store the detected signal itself.
  • the field effect transistor which is sensitive to a physical variable to be detected is a photosensitive transistor which is an optical sensor with an integrated, programmable, non-volatile EEPROM memory.
  • the sensor element according to the invention can be implemented in a standard single-poly CMOS / EEPROM technology. Furthermore, the sensor element according to the invention can also be implemented in double-poly CMOS / EEPROM technology, as a result of which the space requirement of the component can be reduced further.
  • the sensor element can be realized using other technologies, as long as the sensor can be adjusted in its operating point at a gate connection.
  • the field effect transistor of the sensor element according to the invention which is sensitive to a physical variable to be detected, can be a CMOS pressure sensor or acceleration sensor whose gate electrode can be moved locally. If a pressure or an acceleration is applied to the transistor, the pressure or the acceleration can be registered by the local displacement of the gate electrode. If the gate electrode of the pressure sensor or the acceleration sensor is designed as a floating gate, a non-volatile memory can be integrated in the sensor.
  • the present invention eliminates the separation of the sensor and the memory chip.
  • the sensor contains a floating gate that can store charges in a non-volatile manner.
  • the charges stored on the floating gate influence the working point of the sensor. This means that it can be stored non-volatile as an analog or digital value. Consequently, the present invention provides a sensor element which contains an analog non-volatile memory in the sensor itself, which can be used for setting the operating point, for example for offset correction, or for signal processing.
  • the realization of the sensor and the memory in a single component saves a lot of chip area compared to the separate implementation according to the prior art, since practically two components are combined in one. There are no additional manufacturing costs because the same manufacturing process can be used. Furthermore, deviations between the sensor and memory cell caused by manufacturing-related local parameter fluctuations are eliminated, since the sensor and the memory cell are integrated in one component. Furthermore, no processing unit is required which processes the sensor signal with the stored value.
  • the processing can be carried out in the according to the sensor element itself. The processing can be carried out, for example, by utilizing the transistor characteristics in the different working areas of the transistor.
  • the non-volatile memory of the sensor can also be used to store the recorded sensor signal. For this purpose, with the help of a control loop, so much charge is transported to the floating gate that the sensor output signal reaches a defined value. The sensor signal is then stored in the sensor as a charge change that is present on the floating gate.
  • FIG. 1 schematically shows the structure of a preferred exemplary embodiment of a sensor element according to the invention
  • FIG. 2 shows the optical characteristics of the sensor element shown in FIG. 1 at different pre-programmed threshold voltages
  • Fig. 3 is a schematic representation of a control loop for storing the sensor signal on the sensor memory.
  • a photo field effect transistor 10 is formed in a substrate 12.
  • the photo field effect transistor is a p-channel MOS transistor, the p + -doped source 14 and the p + - doped drain 16 of which are located in a floating n-well 18.
  • a floating gate 20 over the p-channel of the transistor, which can store charges in a non-volatile manner.
  • the floating gate 20 is designed such that a section thereof is arranged in the p-substrate 12 over n-doped regions.
  • a first n-doped area 22 serves as an injection area, while a second n-doped area 24 serves as a control area.
  • the floating gate 20 and the injection region 22 are arranged opposite one another in such a way that a tunnel region 26 is formed between them.
  • the threshold voltage V- j -h shows an almost logarithmic dependence on the incident light intensity.
  • the threshold voltage V ⁇ is also dependent on any charges present on the floating gate.
  • the threshold voltage V th can be defined, for example, as the gate voltage which causes a drain current of 10 ⁇ A at a drain-source voltage of 2 volts.
  • the threshold voltage can be shifted by charges on the floating gate, a simple non-volatile offset correction or operating point adjustment of the photosensitive sensor is possible.
  • FIG. 2 shows optical characteristics of the sensor element shown in FIG. 1 at different pre-programmed threshold voltages of the sensor transistor. These threshold voltages can be programmed by moving or removing electrons from the control region 24 and the injection region 22 to the floating gate 20 by the application of a high voltage. This is done by a tunnel effect between the injection area 22 and the section of the floating gate 20 arranged above it.
  • the optical characteristics of the sensor are represented logarithmically for voltages V ⁇ o magnitude of 0.75 volts to 1.35 volts, where V ⁇ d ⁇ e ho threshold voltage V ⁇ - ho represents without light irradiation.
  • the programmed threshold voltages do not change the logarithmic dependence of the characteristic curve of the sensor on the incident light intensity.
  • the dashed mark 30 shows the circuit symbol of the photo field effect transistor with integrated EEPROM memory, which represents the sensor element according to the preferred exemplary embodiment of the invention.
  • This sensor element is subjected to light irradiation 32.
  • a supply voltage vdd is present at the source electrode of the transistor.
  • the drain electrode of the transistor is connected to ground via a resistor R.
  • the drain electrode is also connected to a first input of a comparator 34.
  • the second input of the comparator is connected to a voltage source which applies a reference voltage V re f to the same.
  • the output of the comparator is with a programming unit 36 for the EEPROM of the photo field effect transistor.
  • the programming unit 36 is connected to the control area 24 and the injection area 22.
  • the reference voltage V re f corresponds to the output voltage V- when there is no light radiation 32. If the transistor is subjected to light irradiation 32, the threshold voltage of the transistor shifts, which results in a change in the output voltage Vj_. This is detected by the comparator 34, whereupon the programming unit 36 applies charges to the floating gate until the output voltage V ⁇ reaches the reference voltage V re f. If this is the case, it is through the Light irradiation 32 changes the threshold voltage of the PMOS transistor by the charges on the floating gate, which cause a threshold voltage shift. Thus, a voltage corresponding to the light output is stored as a threshold voltage change on the floating gate in the sensor.
  • the present invention thus provides a monolithically integrated sensor element in which manufacturing-related parameter fluctuations or adaptations to changed environmental conditions can be compensated for by a non-volatile memory integrated in the sensor element.
  • the compensation information is stored on the floating gate.
  • the memories according to the invention are well suited as analog memories since they can process the analog signal of the sensor directly or can permanently store an analog operating point voltage to be programmed.
  • the component according to the invention simultaneously contains a sensor element and a non-volatile memory.
  • the sensor element according to the present invention can be used in numerous applications, for example in the field of neural networks with non-volatile mass memories or in the field of learning cameras that can learn image patterns only by “viewing” them.
  • the non-volatile storage option also enables offset and sensitivity correction of the sensor, so that a fixed pattern noise in large photosensor arrays can be eliminated.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne un élément de détection présentant un transistor à effet de champ (10) sensible par rapport à une grandeur physique à détecter. L'électrode de grille (20) du transistor (10) se présente sous forme de grille flottante. De ce fait, une cellule de détection et une mémoire non volatile sont intégrées dans l'élément de détection. Le point de fonctionnement dynamique du transistor peut être réglé de manière permanente grâce à la grille flottante (20) sur laquelle sont mémorisées des charges de manière non volatile. En outre, un circuit simple permet de mémoriser de manière non volatile sur la grille flottante (20) des charges correspondant à une grandeur physique détectée.
PCT/EP1996/004947 1996-11-12 1996-11-12 Element de detection Ceased WO1998021756A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP96939013A EP0922304B1 (fr) 1996-11-12 1996-11-12 Element de detection
PCT/EP1996/004947 WO1998021756A1 (fr) 1996-11-12 1996-11-12 Element de detection
DE59608775T DE59608775D1 (de) 1996-11-12 1996-11-12 Sensorelement
US09/297,925 US6141243A (en) 1996-11-12 1996-11-12 Sensor element
JP52206598A JP3269826B2 (ja) 1996-11-12 1996-11-12 センサ素子
KR1019997004212A KR100319057B1 (ko) 1996-11-12 1996-11-12 센서 소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP1996/004947 WO1998021756A1 (fr) 1996-11-12 1996-11-12 Element de detection

Publications (1)

Publication Number Publication Date
WO1998021756A1 true WO1998021756A1 (fr) 1998-05-22

Family

ID=8166396

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP1996/004947 Ceased WO1998021756A1 (fr) 1996-11-12 1996-11-12 Element de detection

Country Status (4)

Country Link
JP (1) JP3269826B2 (fr)
KR (1) KR100319057B1 (fr)
DE (1) DE59608775D1 (fr)
WO (1) WO1998021756A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0990911A1 (fr) * 1998-09-29 2000-04-05 Siemens Aktiengesellschaft Capteur micromécanique à base d'effet de champ et son utilisation
US7180798B2 (en) 2001-04-12 2007-02-20 Fuji Electric Co., Ltd. Semiconductor physical quantity sensing device
DE10216016B4 (de) * 2001-04-12 2010-07-08 Fuji Electric Systems Co., Ltd. Halbleitervorrichtung zum Messen einer physikalischen Größe
EP2466317A1 (fr) * 2010-12-17 2012-06-20 Nxp B.V. Détection de seuil d'accélération

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102320950B1 (ko) * 2020-02-13 2021-11-02 연세대학교 산학협력단 압력 검출 메모리 트랜지스터

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4788581A (en) * 1984-04-10 1988-11-29 Hahn-Meitner-Institut Berlin Gmbh MOS dosimeter
DE4004179A1 (de) * 1990-02-12 1991-08-14 Fraunhofer Ges Forschung Integrierbarer, kapazitiver drucksensor und verfahren zum herstellen desselben
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
JPH07115182A (ja) * 1993-10-15 1995-05-02 Matsushita Electric Ind Co Ltd メモリー機能付き光電変換素子および固体撮像装置
US5541878A (en) * 1991-05-09 1996-07-30 Synaptics, Incorporated Writable analog reference voltage storage device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4788581A (en) * 1984-04-10 1988-11-29 Hahn-Meitner-Institut Berlin Gmbh MOS dosimeter
US5343064A (en) * 1988-03-18 1994-08-30 Spangler Leland J Fully integrated single-crystal silicon-on-insulator process, sensors and circuits
DE4004179A1 (de) * 1990-02-12 1991-08-14 Fraunhofer Ges Forschung Integrierbarer, kapazitiver drucksensor und verfahren zum herstellen desselben
US5541878A (en) * 1991-05-09 1996-07-30 Synaptics, Incorporated Writable analog reference voltage storage device
JPH07115182A (ja) * 1993-10-15 1995-05-02 Matsushita Electric Ind Co Ltd メモリー機能付き光電変換素子および固体撮像装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 095, no. 008 29 September 1995 (1995-09-29) *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0990911A1 (fr) * 1998-09-29 2000-04-05 Siemens Aktiengesellschaft Capteur micromécanique à base d'effet de champ et son utilisation
US7180798B2 (en) 2001-04-12 2007-02-20 Fuji Electric Co., Ltd. Semiconductor physical quantity sensing device
DE10216016B4 (de) * 2001-04-12 2010-07-08 Fuji Electric Systems Co., Ltd. Halbleitervorrichtung zum Messen einer physikalischen Größe
EP2466317A1 (fr) * 2010-12-17 2012-06-20 Nxp B.V. Détection de seuil d'accélération

Also Published As

Publication number Publication date
JP3269826B2 (ja) 2002-04-02
JP2000515981A (ja) 2000-11-28
KR100319057B1 (ko) 2001-12-29
KR20000053235A (ko) 2000-08-25
DE59608775D1 (de) 2002-03-28

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