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WO1998013532A1 - Agencement de plusieurs cibles permettant de reduire l'intensite et la severite de la formation d'arc dans un dispositif de pulverisation cathodique a courant continu - Google Patents

Agencement de plusieurs cibles permettant de reduire l'intensite et la severite de la formation d'arc dans un dispositif de pulverisation cathodique a courant continu Download PDF

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Publication number
WO1998013532A1
WO1998013532A1 PCT/US1997/016723 US9716723W WO9813532A1 WO 1998013532 A1 WO1998013532 A1 WO 1998013532A1 US 9716723 W US9716723 W US 9716723W WO 9813532 A1 WO9813532 A1 WO 9813532A1
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WO
WIPO (PCT)
Prior art keywords
target
targets
sputtering
coating system
arc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1997/016723
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English (en)
Inventor
Norman L. Boling
Byron A. Wood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Deposition Sciences Inc
Original Assignee
Deposition Sciences Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deposition Sciences Inc filed Critical Deposition Sciences Inc
Publication of WO1998013532A1 publication Critical patent/WO1998013532A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

Definitions

  • the present invention is a method for reducing the frequency and severity of arcing during a DC reactive sputtering process.
  • Arcs cause material to be ejected from the site of the arc, and some of this material travels to the substrate where it forms defects in the sputtered coating on the substrate surface.
  • Arcs also disrupt the functioning of the sputtering power supply, causing interruptions in sputtering which can result in unacceptable loss of process control and instability of process parameters.
  • Arc suppression is therefore a critical factor that must be considered when designing any sputtering system and arc suppression features are normally incorporated into the target power supply of such a system.
  • This invention enhances the arc suppression performance of prior art sputtering power supplies which employ voltage interruption or reversal as a means for arc suppression together with the use of a shaped magnetic field.
  • arc suppression features are incorporated into the sputtering power supply.
  • these features cause the power supply voltage, which is negative during sputtering, to become zero or to attain a positive value for periods of short duration during the operation of the process.
  • potential arc sites situated on an insulating layer that covers the sputtering target are discharged by electrons within the plasma that occupies the space adjacent the target. This plasma begins to dissipate rapidly as soon as interruption or reversal is initiated.
  • Arc suppression systems known by the trade names SPARCTM , SPARC -LETM and STARBURST TM manufactured by Advanced Energy Systems of Fort Collins, Colorado serve as examples of the current art of arc suppressing power supplies. These operate by replacing the negative sputtering voltage with a positive voltage that is generated by a separate supply. They can operate in an arc triggered mode in which voltage reversal occurs when a detector in the power supply senses the beginning of an arc, or in a self triggered mode in which the arc detector is not used and voltage reversals of fixed duration occur at regular intervals. The arc triggered mode can be combined with the internally triggered mode so that the systems will trigger either upon detection of an arc or detection of an internally derived signal. SPARC-LETM ,
  • SPARCTM and STARBURST TM in the order listed are designed for use with power supplies that deliver successively higher sputtering power.
  • the designation "SPARCTM -type" will be used to refer to any of the three arc suppression systems just listed, or to other arc suppression systems that provide periodic voltage reversals in an internally or externally triggered mode.
  • the practice of the cited invention provides a more complete discharge of potential arc sites than had been provided by the prior art, and has been found to allow an increase in the arc threshold power by an amount such that arcing is no longer the factor that limits the rate of sputtering .
  • the source of the auxiliary plasma was a separate plasma applicator. Particular embodiments were disclosed in which the sources were microwave-activated plasma applicators. These plasma applicators were driven by microwave generators so that the power delivered to them during the sputtering process could be controlled without changing the sputtering power supply settings. The source of plasma did not provide material that was sputtered onto the substrate.
  • FIG. 1 depicts the essential features of these prior art approaches.
  • FIG. 1 two identical sputtering power supplies 1,2 are connected to identical sputtering target assemblies which are placed side by side in a sputtering chamber.
  • Each target assembly consists of a sputtering cathode 4 and the sputtering anode 5.
  • the cathode contains a sputtering target not shown and presumably also contains magnets.
  • the cathodes are each connected to the power supplies by means of electrical connections 6 which pass through electrical standofFs 7 in the chamber wall 8.
  • each power supply being comprised of two boxes, a box 9 which performs the arc suppression function, and a box 10, which is the source of sputtering power.
  • the plasmas from each target form in the regions 1 1 and 12 above the targets and bring about an increase in the sputtering rate which can be achieved before the sputtering process is disrupted by arcing.
  • FIG. 2 shows schematically a plan view of and a section through a magnetron target.
  • the target assembly 20 is elongated, typically 5 to 7 inches wide and 15 to 40 inches long and is shown with a cut through it to emphasize the variability of its length. It has within it a sputtering target 21 with a magnet assembly 22 underneath. The magnet assembly is shown by dotted lines in the plan view.
  • the view of Section AA shows the edge magnets 24 disposed in lines around the perimeter of the target and the center magnets disposed along the target center line.
  • the polarity of the magnets in the center is opposite to that of the magnets on the perimeter, so that a large portion of the magnetic field lines, represented by the dotted lines 26 loop through both the center and edge magnets.
  • the magnet assembly 22 may contain a soft iron plate 27 to provide a closed path for magnetic flux passing between the magnets.
  • Electrical standoffs 28 electrically isolate the magnet assembly and the target from the anode.
  • FIG. 3a, 3b, and 3c are based on FIG. 1 of Window and Savides.
  • FIG. 3 a shows a section through the magnet assembly 22 of FIG. 2.
  • FIG. 3 a the magnet assembly has been designed such that the total magnetic flux passing through the center magnets is nearly equal to the flux passing through the edge magnets. Regions in the space surrounding the magnet assembly are shown as circles containing identifying numbers.
  • FIG. 3 a In FIG. 3 a almost all of the lines of magnetic flux pass through both center and edge magnets and very few lines close outside the magnet assembly. A strong magnetic field exists in the regions 30 and 31 between the inner and outer portions of the magnet assembly and only a very small field exists in the regions 32, 33, 34, and 35 which are adjacent to and slightly removed from the target assembly.
  • the magnet configuration of FIG. 3 a is called "balanced". Note that the center magnet is shown larger that the edge magnets, since it must carry approximately twice as much flux.
  • the edge magnets are "stronger" than the center magnets; that is, they generate more flux than the edge magnets and accordingly they are drawn larger in FIG. 3b than the edge magnets in FIG. 3a
  • the stronger magnets on the edge generate many field lines that do not loop through the center magnets.
  • Some of the additional lines from each edge magnet which would have closed by passing through the center magnet travel toward the center of the target. These lines are repelled by lines from the other edge magnet which has the same polarity and are bent away from the center causing an extended magnetic field to exist in the regions 33', and 34'. This field is directed more or less parallel to the vertical direction in the figure with a small inwardly directed component.
  • FIG. 3b shows that many lines of flux from the edge magnets travel inward toward the center of the figure; thus, the configuration of FIG. 3b is called "inward directed".
  • FIG. 3 c shows the situation which occurs when the center magnets are stronger as shown in the figure by their larger size. In this case, lines of force from the center magnet cannot close through the edge magnets and loop out beyond the magnet assembly, so that the general direction of the field lines is outward from the center of the target. There is an appreciable field in the region 32" which points up and to the left and a field in region 35" which points up and to the right.
  • the present invention is an improvement upon the prior art or arc suppression shown in FIG. 1, the improvement comprising tailoring the magnetic field configuration existing in the vicinity of multiple sputtering targets to facilitate transport of electrons between the multiple targets and thereby to facilitate the discharge of potential arc sites during the periods of voltage reversal.
  • FIG. 1 is a schematic of a prior art sputtering arrangement in which two targets with arc suppressing power supplies are used.
  • FIG. 2 is a simplified drawing showing a plan view and section through an elongated target for magnetron sputtering.
  • FIG. 3a is a section through a magnetron sputtering target showing the magnetic field lines in a balanced configuration.
  • FIG. 3b is a section through a magnetron sputtering target showing the magnetic field lines in an unbalanced "inward directed" configuration.
  • FIG. 3c is a section through a magnetron sputtering target showing the magnetic field lines in an unbalanced "outward directed" configuration.
  • FIG, 4 is a diagram showing the configuration of the components in the practice of the present invention.
  • FIG. 5 is a section through a sputtering target illustrating the magnetic field configuration of the present invention under conditions of weak magnetic interaction between targets.
  • FIG. 6a is a section through as sputtering target illustrating the preferred magnetic field configuration when the magnetic interaction between targets is significant.
  • FIG. 6b is a section through a plurality of sputtering targets operating in a similar manner to the targets of FIG. 6a.
  • FIG. 7 is a section through an embodiment of the invention where the sputtering targets are of the type known as cylindrical magnetron targets.
  • At least two sputtering power supplies that employ arc suppression are separately connected to sputtering targets disposed adjacent one another in a sputtering chamber for the purpose of reactive sputtering.
  • targets may be comprised of various materials such as silicon, niobium or titanium, which react with a gas, such as oxygen, within the sputtering chamber to form an insulating coating.
  • FIG. 4 shows a configuration in which two separately connected targets are used and the power supplies are previously described SPARC TM type systems.
  • Power supplies 41 and 42 shown as dotted boxes are individually comprised of main supplies 43,44 and SPARCTM type units 45, 46.
  • the output of each main supply is a negative voltage (nominally -500 volts) which passes through its associated
  • SPARCTM type device whereupon the SPARCTM type device, when triggered by an arc, or commanded by an internally or externally supplied signal, interrupts the negative voltage and inserts in its place a positive voltage of short duration, after which the original sputtering voltage is restored.
  • the voltage from each power supply, so modified, is conveyed by an electrical lead 47 or 48 through an insulating feedthrough
  • the power supply for each of the targets is separately controllable, so that in the practice of the present invention the rate of sputtering from each of the targets may separately adjusted.
  • the present invention consists of the use of a shaped magnetic field to enhance the arc suppression process.
  • the method used depends upon the distance between the sputtering targets in the coating machine, which distance may be predetermined by the configuration of the machine and therefore not easy to change.
  • FIG. 5 shows the improvement of the present invention on the prior art of FIG. 2. This embodiment is applicable when the distance between targets is large enough so that the magnetic field from each magnetron target is very small at the location of the other target. In this case the behavior of electrons diffusing out from one target is independent of the field of the other.
  • the magnetic field has been designed to facilitate diffusion transport of the plasma between targets by allowing the plasma to escape more readily from the target region.
  • FIG. 5 it is possible to understand the relation between the magnetic field configuration of this invention and the arc suppression process.
  • the Figure shows a section through one of the two elongated magnetron sputtering target assemblies mounted on the wall 58 of a sputtering chamber.
  • Each target contains a magnet with central magnets 61 and peripheral magnets 62 Coupling between the magnets is improved by means of the soft iron base plate 68.
  • Each target assembly is connected to a power supply 59 of the SPARCTM type, and is isolated from the wall by insulating spacers 60. The anode structure on the target is not shown.
  • material is removed from the target in the sputtering zones 63 and travels to substrates, not shown, that move in the direction of the arrow 64 which is transverse to the long axis of the target.
  • a layer 65 of reacted insulating sputtered material builds up on the conducting surface of the target. Deposition of positive charge on this surface by ion bombardment occurs during sputtering and is responsible for causing the voltage breakdown across the layer 65 which results in arcing.
  • the voltage reversing action of the power supply causes electrons to be drawn from the plasma to the positively charged surface of the insulating layer and, if there is sufficient charge available in the plasma, neutralizes the charge that had built up during the sputtering period since the last reversal and prevents an arc from occurring.
  • the present invention provides a magnetic field configuration which facilitates transport of plasma between targets, making more plasma available for discharge of arc sites in the practice of the invention.
  • both targets are operated in an unbalanced outwardly directed mode in which the central magnets 61 are stronger than the outer magnets 62 as in FIG. 3 c.
  • FIG. 5, which depicts one of the targets therefore shows the central magnets having a larger size than the peripheral magnets.
  • the design of the second sputtering target is the same as that of the first target shown in FIG. 5.
  • the first target is situated next to the second and the long axes of the two targets are parallel.
  • Each of the two target helps suppress arcs in the other target by providing a plasma that persists during the voltage reversal period of the other. This enables a more complete discharge than is possible when only one target is present.
  • the present invention provides a magnetic field configuration around the targets which facilitates passage of plasma from one target into the region 66 above the other.
  • the unbalanced outward directed field accomplishes this.
  • Plasma escapes from the space above the sputtering region by traveling along the outwardly directed field lines 67 and eventually reaches a field free region. It then diffuses into the region of the other target and during voltage reversal contributes electrons which discharge the insulating layer on the other target.
  • the outward directed field lines from the other target provide a path on which the electrons from the original target can travel to the insulating layer of the other.
  • a different magnetic field configuration is preferred.
  • the second embodiment is used when the targets are close enough to one another that a substantial magnetic field caused by the magnet assembly of one target exists at the location of the magnetic assembly of the other.
  • This configuration is shown if FIG. 6a.
  • Two elongated, unbalanced, outwardly directed sputtering target magnet assemblies 70 and 71 like the one shown if FIG. 5 are mounted adjacent one another on the wall 72 of a sputtering chamber with their long axes parallel.
  • the targets have central magnets 73 and peripheral magnets 74 as in FIG.
  • each target assembly contains a magnet assembly with a soft iron base plate 75. It is preferred to improve the coupling between targets by providing a magnetically permeable connecting means, such as a soft iron plate 76 between the baseplates. Alternatively, a single continuous plate could be used for both targets so that the targets are mechanically integral.
  • FIG. 6a can be adapted to accommodate a plurality of sputtering targets in which the individual targets are disposed adjacent one another is shown in FIG. 6b. Individual sputtering targets are shown so disposed with the target on the right side being cut to indicate that the sequence can be repeated as often as desired.
  • the polarities of the magnets in the assemblies of adjacent targets is opposite. This opposite polarity together with the stronger outer magnets in each assembly facilitates transfer of plasma between targets and enhances arc suppression.
  • tighter coupling may be achieved by adding a magnetically permeable coupling means such as a soft iron plate between targets, of a single plate could connect all of the targets.
  • the sputtering process incorporates two targets belonging to a class known to the art as cylindrical magnetron targets.
  • targets are used in a wide range of sputtering applications and are often used to reactively sputter an insulating material such as silicon dioxide onto a variety of substrates.
  • Cylindrical magnetron devices are well known to the art. Examples of the cylindrical magnetron target assemblies employed in this embodiment are manufactured by Airco, Inc of Fairfield, CA. The main components of these devices, are the cylindrical target, which is comprised of the material, such as silicon, that is to be sputtered, the magnet pack, and a means for rotating the target. Cylindrical magnetron targets have the advantage that due to the rotation of the target during sputtering, material is removed uniformly from the entire cylindrical surface of the target.
  • a common arrangement to which the present invention is particularly applicable incorporates two cylindrical magnetrons which are spaced a few inches apart, a configuration often referred to by those skilled in the an as a "dual C-mag.” FIG.
  • FIG. 7 shows the a section through a configuration in which the present invention has been applied to a sputtering process employing cylindrical magnetron targets.
  • Two such targets 80 are shown mounted next to one another.
  • Unbalanced, outwardly directed magnet assemblies 81 are mounted within each target so that magnetic lines of flux emanate from the targets. These lines facilitate the transport of plasma between targets, enhancing arc suppression.
  • the targets rotate in the direction of the arrows 83 and substrates to be coated travel past the target in the direction of the a ⁇ ow 83.
  • the main power supplies 1,2 in these large processes are capable of delivering electrical power to the sputtering targets at a level of 50 kilowatts or more.
  • Such main supplies examples of which are manufactured by Halmar
  • arc suppression features may have various arc suppression features incorporated into them, such as the ability to detect the onset of an arc and temporarily shut down, or an arc diversion feature in which a reversed voltage that is stored on a capacitor is substituted for the supply voltage upon arc detection.
  • the existing arc suppression features if any, are replaced by the those of the previously described SPARCTM type units, and therefore these presently existing features are shut down or removed from the main supplies.
  • SPARCTM type units then connected in series with the output of each main unit or incorporated into each main unit, providing the ability to create periodic voltage reversals as previously described and enhancing the arc suppression capability of the process.
  • the present invention is applicable to batch sputtering processes such as are commonly carried out using a rotatable drum or table to convey the substrates past a sputtering station. It is also applicable to continuous processes in which the substrates are transported on a substantially straight line past the sputtering station, as in a so called “in line” process, or to a roll coating process in which the substrate is a continuous strip which is conveyed from a feeding roll past the sputtering station to a receiving roll.
  • the substrate dimension in the direction transverse to the substrate motion may be several meters.
  • the sputtering target is elongated in the transverse direction in order to extend over the entire substrate as the substrate moves past it.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Agencement de cibles (50, 51) pulvérisant simultanément de la matière sur un substrat (52) placé dans une chambre de pulvérisation dans laquelle plusieurs cibles (50, 51) sont individuellement reliées à des alimentations en puissance séparées (41, 42) dotées de systèmes (45, 46) de suppression d'arc. L'agencement utilise un champ magnétique formé pour assurer une caractéristique de suppression d'arc renforcée.
PCT/US1997/016723 1996-09-24 1997-09-18 Agencement de plusieurs cibles permettant de reduire l'intensite et la severite de la formation d'arc dans un dispositif de pulverisation cathodique a courant continu Ceased WO1998013532A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71868396A 1996-09-24 1996-09-24
US08/718,683 1996-09-24

Publications (1)

Publication Number Publication Date
WO1998013532A1 true WO1998013532A1 (fr) 1998-04-02

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PCT/US1997/016723 Ceased WO1998013532A1 (fr) 1996-09-24 1997-09-18 Agencement de plusieurs cibles permettant de reduire l'intensite et la severite de la formation d'arc dans un dispositif de pulverisation cathodique a courant continu

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1279351A1 (fr) * 2001-07-27 2003-01-29 Franco Amore Boite avec des aimants à reconditionner des lames de rasoir
EP1333106A1 (fr) * 2002-02-01 2003-08-06 PX Techs S.A. Procédé et installation de dépot d'un revêtement noir sur un substrat
WO2014005617A1 (fr) * 2012-07-02 2014-01-09 Applied Materials, Inc. Appareil permettant de déposer une couche d'un matériau pulvérisé sur un substrat, et système de dépôt
CN110965036A (zh) * 2019-12-26 2020-04-07 沈阳广泰真空科技有限公司 稀土永磁体表面真空镀膜设备

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JPH05148644A (ja) * 1991-11-26 1993-06-15 Asahi Glass Co Ltd スパツタリング装置
US5281321A (en) * 1991-08-20 1994-01-25 Leybold Aktiengesellschaft Device for the suppression of arcs
US5286360A (en) * 1992-01-29 1994-02-15 Leybold Aktiengesellschaft Apparatus for coating a substrate, especially with electrically nonconductive coatings
US5338422A (en) * 1992-09-29 1994-08-16 The Boc Group, Inc. Device and method for depositing metal oxide films
EP0639655A1 (fr) * 1993-07-28 1995-02-22 Asahi Glass Company Ltd. Procédé et appareil pour pulvérisation cathodique
US5427669A (en) * 1992-12-30 1995-06-27 Advanced Energy Industries, Inc. Thin film DC plasma processing system
US5556519A (en) * 1990-03-17 1996-09-17 Teer; Dennis G. Magnetron sputter ion plating

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US5556519A (en) * 1990-03-17 1996-09-17 Teer; Dennis G. Magnetron sputter ion plating
US5281321A (en) * 1991-08-20 1994-01-25 Leybold Aktiengesellschaft Device for the suppression of arcs
JPH05148644A (ja) * 1991-11-26 1993-06-15 Asahi Glass Co Ltd スパツタリング装置
US5286360A (en) * 1992-01-29 1994-02-15 Leybold Aktiengesellschaft Apparatus for coating a substrate, especially with electrically nonconductive coatings
US5338422A (en) * 1992-09-29 1994-08-16 The Boc Group, Inc. Device and method for depositing metal oxide films
US5427669A (en) * 1992-12-30 1995-06-27 Advanced Energy Industries, Inc. Thin film DC plasma processing system
EP0639655A1 (fr) * 1993-07-28 1995-02-22 Asahi Glass Company Ltd. Procédé et appareil pour pulvérisation cathodique

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Title
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1279351A1 (fr) * 2001-07-27 2003-01-29 Franco Amore Boite avec des aimants à reconditionner des lames de rasoir
EP1333106A1 (fr) * 2002-02-01 2003-08-06 PX Techs S.A. Procédé et installation de dépot d'un revêtement noir sur un substrat
WO2003064719A1 (fr) * 2002-02-01 2003-08-07 Px Tech S.A. Procede et installation de depot sous vide d'un revetement noir
WO2014005617A1 (fr) * 2012-07-02 2014-01-09 Applied Materials, Inc. Appareil permettant de déposer une couche d'un matériau pulvérisé sur un substrat, et système de dépôt
CN104704603A (zh) * 2012-07-02 2015-06-10 应用材料公司 用以涂布溅镀材料层于基板上的装置及沉积系统
JP2015522715A (ja) * 2012-07-02 2015-08-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板上にスパッタリングされた材料の層をコーティングするための装置及び堆積システム
KR101920840B1 (ko) * 2012-07-02 2018-11-21 어플라이드 머티어리얼스, 인코포레이티드 스퍼터링된 물질의 층을 기판 상에 코팅하기 위한 장치 및 증착 시스템
CN110965036A (zh) * 2019-12-26 2020-04-07 沈阳广泰真空科技有限公司 稀土永磁体表面真空镀膜设备
CN110965036B (zh) * 2019-12-26 2021-09-14 沈阳广泰真空科技有限公司 稀土永磁体表面真空镀膜设备

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