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WO1998001601B1 - Chambre a plasma avec orifices separes d'injection de gaz de traitement et de gaz de nettoyage - Google Patents

Chambre a plasma avec orifices separes d'injection de gaz de traitement et de gaz de nettoyage

Info

Publication number
WO1998001601B1
WO1998001601B1 PCT/US1997/011686 US9711686W WO9801601B1 WO 1998001601 B1 WO1998001601 B1 WO 1998001601B1 US 9711686 W US9711686 W US 9711686W WO 9801601 B1 WO9801601 B1 WO 9801601B1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
chamber
cleaning
ports
injection port
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1997/011686
Other languages
English (en)
Other versions
WO1998001601A1 (fr
Filing date
Publication date
Priority claimed from US08/679,356 external-priority patent/US5988187A/en
Application filed filed Critical
Priority to EP97934054A priority Critical patent/EP0856070B1/fr
Priority to JP50528398A priority patent/JP4000487B2/ja
Priority to DE69735271T priority patent/DE69735271T2/de
Publication of WO1998001601A1 publication Critical patent/WO1998001601A1/fr
Publication of WO1998001601B1 publication Critical patent/WO1998001601B1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Abstract

L'invention concerne un procédé et un mécanisme de nettoyage in situ d'une enceinte, procédé dans lequel un gaz de traitement est injecté dans l'enceinte par des orifices d'injection de gaz. L'invention concerne des orifices séparés d'injection de gaz par lesquels un gaz de traitement et le gaz de nettoyage sont injectés dans l'enceinte. Le gaz de traitement est injecté dans l'enceinte, tel qu'une enceinte à plasma (30), à travers un premier orifice (62) d'injection de gaz alors que le gaz de nettoyage, qui nettoie le résidu laissé par le gaz de traitement pendant le procédé de déposition, est injecté dans l'enceinte par le deuxième orifice (60) d'injection de gaz, séparé du premier orifice d'injection de gaz par lequel le gaz de traitement est injecté. La séparation des orifices d'injection de gaz permet d'obtenir une pression équilibrée à l'intérieur des orifices des vis à jet destinées au gaz de traitement et à l'intérieur de l'enceinte, ce qui permet un nettoyage maximal des orifices des vis à jet et réduit la fréquence de remplacement des orifices des vis à jet dans l'enceinte.
PCT/US1997/011686 1996-07-09 1997-07-09 Chambre a plasma avec orifices separes d'injection de gaz de traitement et de gaz de nettoyage Ceased WO1998001601A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP97934054A EP0856070B1 (fr) 1996-07-09 1997-07-09 Procédé de nettoyage d'une chambre de traitement sous vide y inclu l'orifice d'injection de gaz
JP50528398A JP4000487B2 (ja) 1996-07-09 1997-07-09 プロセス気体および洗浄気体の別々の注入ポートを有するプラズマ・チャンバ
DE69735271T DE69735271T2 (de) 1996-07-09 1997-07-09 Verfahren zum Reinigen eines Vakuumbearbeitungskammer einschliesslich der Gaseinlassöffnung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/679,356 1996-07-09
US08/679,356 US5988187A (en) 1996-07-09 1996-07-09 Chemical vapor deposition system with a plasma chamber having separate process gas and cleaning gas injection ports

Publications (2)

Publication Number Publication Date
WO1998001601A1 WO1998001601A1 (fr) 1998-01-15
WO1998001601B1 true WO1998001601B1 (fr) 1998-02-26

Family

ID=24726594

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/011686 Ceased WO1998001601A1 (fr) 1996-07-09 1997-07-09 Chambre a plasma avec orifices separes d'injection de gaz de traitement et de gaz de nettoyage

Country Status (5)

Country Link
US (2) US5988187A (fr)
EP (1) EP0856070B1 (fr)
JP (1) JP4000487B2 (fr)
DE (1) DE69735271T2 (fr)
WO (1) WO1998001601A1 (fr)

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US6596123B1 (en) * 2000-01-28 2003-07-22 Applied Materials, Inc. Method and apparatus for cleaning a semiconductor wafer processing system
KR100444149B1 (ko) * 2000-07-22 2004-08-09 주식회사 아이피에스 Ald 박막증착설비용 클리닝방법
US6408860B1 (en) * 2000-09-21 2002-06-25 Trw Inc. Method for cleaning phosphorus from an MBE chamber
KR100375102B1 (ko) * 2000-10-18 2003-03-08 삼성전자주식회사 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치
US6534921B1 (en) * 2000-11-09 2003-03-18 Samsung Electronics Co., Ltd. Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system
US7270724B2 (en) 2000-12-13 2007-09-18 Uvtech Systems, Inc. Scanning plasma reactor
US6773683B2 (en) 2001-01-08 2004-08-10 Uvtech Systems, Inc. Photocatalytic reactor system for treating flue effluents
KR100453014B1 (ko) * 2001-12-26 2004-10-14 주성엔지니어링(주) Ｃｖｄ 장치
US7176140B1 (en) * 2004-07-09 2007-02-13 Novellus Systems, Inc. Adhesion promotion for etch by-products
US7819981B2 (en) * 2004-10-26 2010-10-26 Advanced Technology Materials, Inc. Methods for cleaning ion implanter components
US20070108161A1 (en) * 2005-11-17 2007-05-17 Applied Materials, Inc. Chamber components with polymer coatings and methods of manufacture
US8603252B2 (en) 2006-04-26 2013-12-10 Advanced Technology Materials, Inc. Cleaning of semiconductor processing systems
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
TWI619153B (zh) 2008-02-11 2018-03-21 恩特葛瑞斯股份有限公司 在半導體處理系統中離子源之清洗
JP2013541188A (ja) * 2010-08-25 2013-11-07 リンデ アクチエンゲゼルシャフト 分子状フッ素を用いるリアクターボックスチャンバのクリーニング
JP6154677B2 (ja) 2013-06-28 2017-06-28 東京エレクトロン株式会社 クリーニング方法及び処理装置
CN105765103B (zh) 2013-12-02 2018-09-25 应用材料公司 用于原位清洁工艺腔室的方法和装置
US10730082B2 (en) * 2016-10-26 2020-08-04 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for differential in situ cleaning
KR20190137927A (ko) * 2017-05-02 2019-12-11 도쿄엘렉트론가부시키가이샤 플라즈마 프로세스 후에 표면 입자 불순물들을 감소시키기 위한 제조 방법
TWI755979B (zh) * 2019-12-20 2022-02-21 台灣積體電路製造股份有限公司 薄膜沉積系統以及沉積薄膜方法
US11854773B2 (en) * 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
KR20230025202A (ko) * 2021-08-13 2023-02-21 정경환 박막 두께 실시간 측정 방법
KR20230025201A (ko) * 2021-08-13 2023-02-21 정경환 박막 두께 실시간 측정 장치

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US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
JPH0250485A (ja) * 1988-08-12 1990-02-20 Fujitsu Ltd 光導電体
US5207836A (en) * 1989-08-25 1993-05-04 Applied Materials, Inc. Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus
JP2598336B2 (ja) * 1990-09-21 1997-04-09 株式会社日立製作所 プラズマ処理装置
US5443686A (en) * 1992-01-15 1995-08-22 International Business Machines Corporation Inc. Plasma CVD apparatus and processes
JP3227522B2 (ja) * 1992-10-20 2001-11-12 株式会社日立製作所 マイクロ波プラズマ処理方法及び装置

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