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WO1997036020A1 - Cible en ceramique pour le depot de couches - Google Patents

Cible en ceramique pour le depot de couches Download PDF

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Publication number
WO1997036020A1
WO1997036020A1 PCT/IL1997/000108 IL9700108W WO9736020A1 WO 1997036020 A1 WO1997036020 A1 WO 1997036020A1 IL 9700108 W IL9700108 W IL 9700108W WO 9736020 A1 WO9736020 A1 WO 9736020A1
Authority
WO
WIPO (PCT)
Prior art keywords
target
tiles
spaces
uniform
backing plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IL1997/000108
Other languages
English (en)
Inventor
Gad Koren
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technion Research and Development Foundation Ltd
Original Assignee
Technion Research and Development Foundation Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technion Research and Development Foundation Ltd filed Critical Technion Research and Development Foundation Ltd
Priority to AU19383/97A priority Critical patent/AU1938397A/en
Publication of WO1997036020A1 publication Critical patent/WO1997036020A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Definitions

  • the invention relates to vacuum deposition systems and components thereof for thin film deposition, such as by DC and RF sputtering techniques, and more particularly, to a novel tiled target assembled from materials composed of sma 11 ceramic t i les .
  • Sputtering targets are used in wafer fabrication systems to grow a thin film on a substrate via a vapor deposition technique involving an exchange of ions, atonii and molecules in a vacuum between the target and the substrate.
  • a vapor deposition technique involving an exchange of ions, atonii and molecules in a vacuum between the target and the substrate.
  • a very high pressure is applied to press the target material into a pellet. Because of this, the size of the target is problematic, since application of a high pressure to a large area typically causes cracks in the target, since uniform pressure intensity is impossible to achieve.
  • sputtering targets fabrication techniques include a planar magetron cathode target as described in US Patent 4,200,510 to Nichols et al, consisting of a number of target tiles arranged in an abutting fashion to form a continuous and enclosed length of consumable metal , with partially consumed tiles being severed and reassembled for further use.
  • a target construction having pieces of two compositions, with beveled edges on the sputtering surface for 1 of the compositions to suppress breakage of the edge portions in contact with adjacent different target pieces due to thermal expansion.
  • a mosaic composite target is disclosed in Japanese patent JP 63307265 to Kawaguchi et al, and is constructed from pieces of two compositions. Gaps between adjacent pieces, which cause no contact during sputtering, act to suppress dust formation from breakage of the edges due to thermal expansion.
  • JP 63183170 to Mizoguchi et al there is disclosed a target for magnetron sputtering constructed as an arrangement of metal blocks on the cathode with gaps between the without causing discharge between them.
  • a target for use in a vapor deposition process said target co pri s i ng : a plurality of individual ceramic tiles proximately disposed one another on a backing plate and bonded thereon, forming spaces between said tiles, said backing plate having holes formed therein, for gas introduction via said holes and spaces.
  • the tiled sputtering target is comprised of many small ceramic tiles, which are attached to the backing plate by a soft solder such as indium.
  • the tiles are arranged close to one another, but spaces are formed therebetween.
  • the backing plate has holes formed therein, and the holes and spaces enable introduction of the sputtering gas into the plasma developed in the vapor deposition process. This greatly enhances uniform introduction of the sputtering gas into the plasma and enhances control of the plasma uniformity.
  • Each of the small ceramic tiles can be fabricated very densely and uniform as pressed pellets, approximately 1 square cm, since the size does not prevent application of high pressure. As a result, uniform large area targets can be assembled, of any shape and size.
  • the holes in the backing plate and spaces between the tiles assist gas flow input into the plasma, and the resulting films are therefore un i form.
  • Fig. 1 is a perspective view of a tiles sputtering target constructed in accordance with the principles of the present invention
  • Fig. 2 is a cross-sectional view of the target of Fig. 1;
  • Fig. 3 is a graph illustrating the resistivity vs. temperature of a high temperature superconducting thin film of YBa Cu 0 produced using the inventive target; and 2 3 7-x
  • Fig. 4 ia an enlargement of a graph illustrating the transition temperature region of Fig. 3 together with the critical current density of the thin film produced using the inventive target.
  • FIGs. 1-2 there are shown, respecively, perpective and cross-sectional side views of a tiled sputtering target 10 constructed in accordance with the principles of the present invention.
  • Target 10 comprises ceramic tiles 12, each on the order of 1 x 1 sq. cm. , which are easily prepared as pressed pellets, at high pressures, enabing them to exhibit properties of unparalleled homogeneity and density.
  • Tiles 12 are the building blocks of target 10, and because of their small area, the high pressure does not cause cracks, and tiles 12 are relatively uniform. Standard materials and a press are needed for fabrication of the inventive target 10 design.
  • Tiles 12 are attached to a backing plate 14 by a soft solder 16 such as indium.
  • backing plate 14 has formed therein a plurality of holes 15.
  • HTS high temperature superconductors
  • An advantage of the inventive design of tiled sputtering target 10 is that tiles 12 are spaced apart from one another. As shown in Fig. 2, the spaces 18 between tiles 12 enable gases used in the sputtering process to be introduced via holes 15 in backing plate 14. For example, in the case of high temperature superconductors, oxygen is used, and it is important to use active oxygen, ionic or atomic, not just oxygen molecules. When introducing the oxygen through the plasma, it is ionized and becomes d i s sassoc i ated into atomic species, which is important for the superconductor. Also, by adding a series resistor to each tile 12, better control of the plasma uniformity can be obta ined .
  • Figs. 3-4 there are shown, respectively, graphs illustrating resistivity vs. temperature of a thin film produced using the inventive target 10 in DC sputtering.
  • Figs. 3-4 indicate a sharp superconducting transition, and in Fig. 4, this is indicated at between 89.5-90.5 degrees Kelvin, which is 1 degree.
  • the other important number is the critical current density (Jc).
  • Another advantage of the inventive design is that using the small ceramic tiles 12, it is relatively easy to replace damaged tiles without discarding the whole target which could be very expensive if it is of large area.
  • the ceramic target can also be used in laser ablation deposition systems, or in electron gun or ion gun evaporation systems.
  • the above techniques may be employed for the deposition of thin films of metals, insulators, semiconductors, and superconductors.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne une cible de pulvérisation (10) en céramique, constituée de carreaux en céramique (12). Cette cible est utile pour les procédés de formation de dépôt en phase gazeuse, elle présente une surface importante (10) et un faible espacement (18) entre les carreaux (12), pour une introduction uniforme des gaz de pulvérisation. Dans la forme d'exécution préférée, la cible de pulvérisation (10) est constituée de petits carreaux en céramique (12), qui sont fixés à la plaque de support (14) par une brasure tendre, par exemple en indium. Les carreaux (12) sont placés l'un près de l'autre, mais des espacements (18) sont laissés entre eux. La plaque de support (14) a des trous (15). Ces trous (15) et les espacements (18) permettent une introduction uniforme du gaz de pulvérisation dans le plasma produit au cours de la formation du dépôt en phase gazeuse et ils permettent également d'améliorer l'uniformité du plasma et donc l'uniformité des couches minces obtenues. Chacun des petits carreaux (12) en céramique peut être fabriqué par compression, à la manière et d'un comprimé, de façon à être très dense et uniforme.
PCT/IL1997/000108 1996-03-26 1997-03-26 Cible en ceramique pour le depot de couches Ceased WO1997036020A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU19383/97A AU1938397A (en) 1996-03-26 1997-03-26 Ceramic target for thin film deposition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL117657 1996-03-26
IL11765796A IL117657A0 (en) 1996-03-26 1996-03-26 Ceramic target for thin film deposition

Publications (1)

Publication Number Publication Date
WO1997036020A1 true WO1997036020A1 (fr) 1997-10-02

Family

ID=11068700

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IL1997/000108 Ceased WO1997036020A1 (fr) 1996-03-26 1997-03-26 Cible en ceramique pour le depot de couches

Country Status (3)

Country Link
AU (1) AU1938397A (fr)
IL (1) IL117657A0 (fr)
WO (1) WO1997036020A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1614767A1 (fr) * 2004-07-09 2006-01-11 Applied Materials, Inc. Arrangement de carreaux de cible pour dépot par pulvérisation
US7550066B2 (en) 2004-07-09 2009-06-23 Applied Materials, Inc. Staggered target tiles
TWI849237B (zh) * 2020-02-06 2024-07-21 日商三井金屬鑛業股份有限公司 濺鍍靶

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4415427A (en) * 1982-09-30 1983-11-15 Gte Products Corporation Thin film deposition by sputtering
US4468313A (en) * 1981-03-03 1984-08-28 Tokyo Shibaura Denki Kabushiki Kaisha Sputtering target
JPH01212752A (ja) * 1988-02-17 1989-08-25 Agency Of Ind Science & Technol 超電導薄膜作製装置
US5187147A (en) * 1991-05-31 1993-02-16 Florida State University Method for producing freestanding high Tc superconducting thin films
JPH05109655A (ja) * 1991-10-15 1993-04-30 Applied Materials Japan Kk Ｃｖｄ−スパツタ装置
JPH05230640A (ja) * 1992-02-25 1993-09-07 Fujitsu Ltd スパッタ装置
US5316585A (en) * 1987-08-07 1994-05-31 Hitachi, Ltd. Method for fabricating superconducting materials and superconductive thin films
US5344302A (en) * 1993-09-03 1994-09-06 B&W Nuclear Service Company Remote impression tool
EP0618306A2 (fr) * 1988-05-16 1994-10-05 Kabushiki Kaisha Toshiba Cible de pulvérisation

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4468313A (en) * 1981-03-03 1984-08-28 Tokyo Shibaura Denki Kabushiki Kaisha Sputtering target
US4415427A (en) * 1982-09-30 1983-11-15 Gte Products Corporation Thin film deposition by sputtering
US5316585A (en) * 1987-08-07 1994-05-31 Hitachi, Ltd. Method for fabricating superconducting materials and superconductive thin films
JPH01212752A (ja) * 1988-02-17 1989-08-25 Agency Of Ind Science & Technol 超電導薄膜作製装置
EP0618306A2 (fr) * 1988-05-16 1994-10-05 Kabushiki Kaisha Toshiba Cible de pulvérisation
US5187147A (en) * 1991-05-31 1993-02-16 Florida State University Method for producing freestanding high Tc superconducting thin films
JPH05109655A (ja) * 1991-10-15 1993-04-30 Applied Materials Japan Kk Ｃｖｄ−スパツタ装置
JPH05230640A (ja) * 1992-02-25 1993-09-07 Fujitsu Ltd スパッタ装置
US5344302A (en) * 1993-09-03 1994-09-06 B&W Nuclear Service Company Remote impression tool

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1614767A1 (fr) * 2004-07-09 2006-01-11 Applied Materials, Inc. Arrangement de carreaux de cible pour dépot par pulvérisation
US7550066B2 (en) 2004-07-09 2009-06-23 Applied Materials, Inc. Staggered target tiles
TWI849237B (zh) * 2020-02-06 2024-07-21 日商三井金屬鑛業股份有限公司 濺鍍靶

Also Published As

Publication number Publication date
AU1938397A (en) 1997-10-17
IL117657A0 (en) 1996-07-23

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