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WO1997033295A3 - Röhrensysteme und herstellungsverfahren hierzu - Google Patents

Röhrensysteme und herstellungsverfahren hierzu Download PDF

Info

Publication number
WO1997033295A3
WO1997033295A3 PCT/DE1997/000427 DE9700427W WO9733295A3 WO 1997033295 A3 WO1997033295 A3 WO 1997033295A3 DE 9700427 W DE9700427 W DE 9700427W WO 9733295 A3 WO9733295 A3 WO 9733295A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
tubes
field
electronic tube
tube systems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE1997/000427
Other languages
English (en)
French (fr)
Other versions
WO1997033295A2 (de
Inventor
Hans W P Koops
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Deutsche Telekom AG
Original Assignee
Deutsche Telekom AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche Telekom AG filed Critical Deutsche Telekom AG
Priority to EP97918006A priority Critical patent/EP0885453A2/de
Publication of WO1997033295A2 publication Critical patent/WO1997033295A2/de
Publication of WO1997033295A3 publication Critical patent/WO1997033295A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/06—Tubes with a single discharge path having electrostatic control means only
    • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00—Gas-filled discharge tubes with solid cathode
    • H01J17/38—Cold-cathode tubes
    • H01J17/40—Cold-cathode tubes with one cathode and one anode, e.g. glow tubes, tuning-indicator glow tubes, voltage-stabiliser tubes, voltage-indicator tubes
    • H01J17/44—Cold-cathode tubes with one cathode and one anode, e.g. glow tubes, tuning-indicator glow tubes, voltage-stabiliser tubes, voltage-indicator tubes having one or more control electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/02—Electron-emitting electrodes; Cathodes
    • H01J19/24—Cold cathodes, e.g. field-emissive cathode

Landscapes

  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

Bei den bekannten Röhrensystemen werden die obere Grenzfrequenz und die Rauscheigenschaften durch die bekannten Verfahren zur Herstellung von miniaturisierten Mehr-Elektroden-Röhren, das sind Dioden, Trioden-Röhren und Mehrelektroden-Röhren, begrenzt. Die beschriebenen Röhrensysteme bestehen aus einer oder mehreren parallel geschalteten Feldemissions- oder Feldionisation-Kathoden für Elektronen oder Ionen, einer Gitter-Elektrode mit einer oder mehreren ringförmigen Öffnungen und einer oder mehreren Anoden. Alle Elektroden werden mit Hilfe der Korpuskularstrahl-Lithographie mit indizierter Deposition nacheinander oder gleichzeitig auf einer die Spannungen zuführenden planaren Leiterbahnstruktur aufgebaut. Der Elektrodenabstand wird dabei so klein gewählt, daß im Mittel nur eine mittlere freie Weglänge der Moleküle bei Normaldruck zwischen die Emitter und Anonden-Elektrode paßt. Die Anwendungsmöglichkeiten der Erfindung sind sehr universell, beziehen sich aber bevorzugt auf die Höchstfrequenztechnik.
PCT/DE1997/000427 1996-03-09 1997-03-03 Röhrensysteme und herstellungsverfahren hierzu Ceased WO1997033295A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP97918006A EP0885453A2 (de) 1996-03-09 1997-03-03 Röhrensysteme und herstellungsverfahren hierzu

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19609234.5 1996-03-09
DE1996109234 DE19609234A1 (de) 1996-03-09 1996-03-09 Röhrensysteme und Herstellungsverfahren hierzu

Publications (2)

Publication Number Publication Date
WO1997033295A2 WO1997033295A2 (de) 1997-09-12
WO1997033295A3 true WO1997033295A3 (de) 1997-12-04

Family

ID=7787766

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1997/000427 Ceased WO1997033295A2 (de) 1996-03-09 1997-03-03 Röhrensysteme und herstellungsverfahren hierzu

Country Status (4)

Country Link
EP (1) EP0885453A2 (de)
DE (1) DE19609234A1 (de)
TW (1) TW357932U (de)
WO (1) WO1997033295A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6198557B1 (en) 1997-06-25 2001-03-06 Deutsche Telekom Ag Telecommunication system having frequency-dividing optical components for the parallel processing of optical pulses
JP3792126B2 (ja) 1999-05-25 2006-07-05 ナヴォテック・ゲーエムベーハー 小型テラヘルツ放射源
DE10006361A1 (de) * 1999-05-25 2000-11-30 Deutsche Telekom Ag Miniaturisierte Terahertz-Strahlungsquelle
EP1363164B1 (de) 2002-05-16 2015-04-29 NaWoTec GmbH Verfahren zum Ätzen einer Oberfläche mittels durch fokussierten Elektronenstrahl hervorgerufenen chemischen Reaktionen auf dieser Oberfläche
DE10302794A1 (de) * 2003-01-24 2004-07-29 Nawotec Gmbh Verfahren und Vorrichtung zur Herstellung von Korpuskularstrahlsystemen
US20070029046A1 (en) * 2005-08-04 2007-02-08 Applied Materials, Inc. Methods and systems for increasing substrate temperature in plasma reactors
EP2223325B1 (de) * 2007-12-28 2011-06-29 Selex Sistemi Integrati S.P.A. Feldemissionsbauelement des hochfrequenz-triodentyps und herstellungsprozess dafür
EP2413343B1 (de) * 2010-07-26 2015-11-04 Hans W.P. Dr. Koops Vorrichtung zur Erzeugung von THz-Strahlung mit freien Elektronenstrahlen

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855636A (en) * 1987-10-08 1989-08-08 Busta Heinz H Micromachined cold cathode vacuum tube device and method of making
WO1992002030A1 (en) * 1990-07-18 1992-02-06 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device
EP0490536A1 (de) * 1990-11-28 1992-06-17 Matsushita Electric Industrial Co., Ltd. Mikroelektronische Feldemissionsvorrichtung
EP0513777A2 (de) * 1991-05-13 1992-11-19 Seiko Epson Corporation Mehrfachelektrodenvorrichtung mit feldemittierenden Elektronen und Verfahren zu dessen Herstellung
EP0535953A2 (de) * 1991-10-02 1993-04-07 Sharp Kabushiki Kaisha Mit Feldemission arbeitende elektronische Vorrichtung
US5249340A (en) * 1991-06-24 1993-10-05 Motorola, Inc. Field emission device employing a selective electrode deposition method
EP0569671A1 (de) * 1992-05-12 1993-11-18 Nec Corporation Feldemissionskaltkathode und Verfahren zur Herstellung
US5409568A (en) * 1992-08-04 1995-04-25 Vasche; Gregory S. Method of fabricating a microelectronic vacuum triode structure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
JP2968014B2 (ja) * 1990-01-29 1999-10-25 三菱電機株式会社 微小真空管及びその製造方法
US5192240A (en) * 1990-02-22 1993-03-09 Seiko Epson Corporation Method of manufacturing a microelectronic vacuum device
US5203731A (en) * 1990-07-18 1993-04-20 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device
US5150019A (en) * 1990-10-01 1992-09-22 National Semiconductor Corp. Integrated circuit electronic grid device and method
CA2070478A1 (en) * 1991-06-27 1992-12-28 Wolfgang M. Feist Fabrication method for field emission arrays
EP0525763B1 (de) * 1991-08-01 1995-10-25 Texas Instruments Incorporated Verfahren zur Herstellung eines Mikroelektronisches Bauelement
JPH05182609A (ja) * 1991-12-27 1993-07-23 Sharp Corp 画像表示装置
GB9210419D0 (en) * 1992-05-15 1992-07-01 Marconi Gec Ltd Cathode structures
DE19502966A1 (de) * 1995-01-31 1995-06-14 Ignaz Prof Dr Eisele Anwendung von elektrisch leitenden Spitzen als Feldemitter in einer Gasatmosphäre zur Herstellung von flachen Bildschirmen oder Gassensoren

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4855636A (en) * 1987-10-08 1989-08-08 Busta Heinz H Micromachined cold cathode vacuum tube device and method of making
WO1992002030A1 (en) * 1990-07-18 1992-02-06 International Business Machines Corporation Process and structure of an integrated vacuum microelectronic device
EP0490536A1 (de) * 1990-11-28 1992-06-17 Matsushita Electric Industrial Co., Ltd. Mikroelektronische Feldemissionsvorrichtung
EP0513777A2 (de) * 1991-05-13 1992-11-19 Seiko Epson Corporation Mehrfachelektrodenvorrichtung mit feldemittierenden Elektronen und Verfahren zu dessen Herstellung
US5249340A (en) * 1991-06-24 1993-10-05 Motorola, Inc. Field emission device employing a selective electrode deposition method
EP0535953A2 (de) * 1991-10-02 1993-04-07 Sharp Kabushiki Kaisha Mit Feldemission arbeitende elektronische Vorrichtung
EP0569671A1 (de) * 1992-05-12 1993-11-18 Nec Corporation Feldemissionskaltkathode und Verfahren zur Herstellung
US5409568A (en) * 1992-08-04 1995-04-25 Vasche; Gregory S. Method of fabricating a microelectronic vacuum triode structure

Also Published As

Publication number Publication date
DE19609234A1 (de) 1997-09-11
EP0885453A2 (de) 1998-12-23
TW357932U (en) 1999-05-01
WO1997033295A2 (de) 1997-09-12

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