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WO1997023001A1 - Dispositif a semiconducteur - Google Patents

Dispositif a semiconducteur Download PDF

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Publication number
WO1997023001A1
WO1997023001A1 PCT/RU1996/000334 RU9600334W WO9723001A1 WO 1997023001 A1 WO1997023001 A1 WO 1997023001A1 RU 9600334 W RU9600334 W RU 9600334W WO 9723001 A1 WO9723001 A1 WO 9723001A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
slοy
κοnτaκτοm
slοya
sφορmiροvan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/RU1996/000334
Other languages
English (en)
Russian (ru)
Inventor
Valery Moiseevich Ioffe
Askhat Ibragimovich Mautov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from RU95121291A external-priority patent/RU2117360C1/ru
Priority claimed from RU95121127A external-priority patent/RU2108639C1/ru
Priority claimed from RU96101332/25A external-priority patent/RU96101332A/ru
Application filed by Individual filed Critical Individual
Priority to US09/043,759 priority Critical patent/US6037650A/en
Publication of WO1997023001A1 publication Critical patent/WO1997023001A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Definitions

  • P ⁇ d ⁇ anzis ⁇ m ⁇ bychn ⁇ ⁇ ni mayu ⁇ ⁇ lu ⁇ v ⁇ dni ⁇ vy ⁇ ib ⁇ having ⁇ i or b ⁇ lee vyv ⁇ d ⁇ v for ⁇ dachi u ⁇ avlyayuscheg ⁇ na ⁇ yazheniya, ⁇ ednaznachenny to enhance gene ⁇ i ⁇ vaniya and ⁇ e ⁇ b ⁇ az ⁇ vaniya ele ⁇ iches ⁇ i ⁇ ⁇ lebany (Entsi ⁇ l ⁇ ediches ⁇ y sl ⁇ va ⁇ , ⁇ s ⁇ va, S ⁇ v Entsi ⁇ l ⁇ ediya, 1991, s ⁇ 557) Susches ⁇ vennym ned ⁇ s ⁇ a ⁇ m susches ⁇ vuyuschi ⁇ ⁇ anzis ⁇ v ⁇ a ⁇ levy ⁇ ⁇ a ⁇ and bi ⁇ lya ⁇ ny ⁇ ⁇ anzis ⁇ v it is that the outgoing area of the receiver is free of
  • ⁇ y s ⁇ s ⁇ b is ⁇ lyucheniya nezhela ⁇ eln ⁇ g ⁇ influence em ⁇ s ⁇ n ⁇ y ⁇ blas ⁇ yami connection between 2 and 6 za ⁇ lyuchae ⁇ sya in ⁇ m, ch ⁇ y ⁇ - ⁇ ⁇ e ⁇ e ⁇ da ne ⁇ dn ⁇ dn ⁇ vd ⁇ l X legi ⁇ uyu ⁇ sya ⁇ a ⁇ ⁇ - ⁇ blas ⁇ ⁇ a ⁇ ⁇ - and ⁇ blas ⁇ P ⁇ i e ⁇ m ⁇ me ⁇ e ⁇ s ⁇ a u ⁇ avlyayuscheg ⁇ na ⁇ yazheniya ⁇ azme ⁇ ⁇ blas ⁇ i ney ⁇ aln ⁇ s ⁇ i vd ⁇ l X in ⁇ -
  • the area also decreases, both in the ⁇ -area and when the change in the capacity of the device is attempted in the larger case, in that case, when the size of the contact area is ⁇ ⁇
  • Area 1 is commensurate with the size of the appliance, the contact area can be placed on a distributed dielectric layer (Fig. 2)
  • ⁇ sli not ⁇ ebue ⁇ sya changes em ⁇ s ⁇ i ⁇ ib ⁇ a between ⁇ miches ⁇ im ⁇ n ⁇ a ⁇ m ⁇ ⁇ blas ⁇ i 1 and 6 b ⁇ lshi ⁇ ⁇ edela ⁇ , ⁇ ⁇ v ⁇ dyaschie uchas ⁇ i 3 vy ⁇ lnennye on ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ blas ⁇ i 1 ne ⁇ s ⁇ eds ⁇ venn ⁇ s ⁇ edinyayu ⁇ sya with ⁇ miches ⁇ im ⁇ n ⁇ a ⁇ m ⁇ ⁇ blas ⁇ i 1 ⁇ e ⁇ m case e ⁇ e ⁇ ivnaya ⁇ l ⁇ schad ⁇ las ⁇ in u ⁇ avlyaem ⁇ g ⁇ ⁇ ndensa ⁇ a izmenyae ⁇ sya the amount ⁇ avnuyu ⁇ l ⁇ schadi zaz ⁇ v between sections 3
  • ⁇ - ⁇ is in the case of any (s) barriers that may be affected by the commercially available part 4 of the distributor
  • ⁇ (X) is lightened as the ⁇ - area and the ⁇ - area are reduced.
  • ⁇ is the voltage of the consumer half 1
  • the unit is the calculated metal ⁇ - ⁇ of the industrial or barrier
  • ⁇ is an elementary charge, ⁇ 97/23001
  • ⁇ ( ⁇ , mony, ⁇ ) is the frequency of separation of the impurities in the film
  • ⁇ ( ⁇ , ⁇ ) is the thickness of layer 1
  • ⁇ is the frequency of the 1st, ⁇ 5 2 m ⁇ zhe ⁇ by ⁇ legi ⁇ vana ⁇ a ⁇ ⁇ dn ⁇ dn ⁇ ⁇ a ⁇ and ne ⁇ dn ⁇ dn ⁇ vd ⁇ l X ( ⁇ )
  • ⁇ blas ⁇ 1 ⁇ lu ⁇ v ⁇ dni ⁇ v ⁇ y ⁇ len ⁇ i m ⁇ zhe ⁇ by ⁇ is ⁇ lz ⁇ vana in ⁇ aches ⁇ ve niz ⁇ v ⁇ dyascheg ⁇ ma ⁇ e ⁇ iala 5 and ⁇ blas ⁇ 2 ⁇ aches ⁇ ve ⁇ v ⁇ dyaschey ⁇ las ⁇ iny 6 ⁇ a ⁇ ig 6 ⁇ iveden ⁇ a ⁇ y ⁇ lu ⁇ v ⁇ dni ⁇ vy ⁇ ib ⁇ a line ⁇ e ⁇ edachi variable v ⁇ ln ⁇ vym s ⁇ ivleniem, y ⁇ y ba ⁇ e ⁇ Sh ⁇ i s ⁇ mi ⁇ van between the lower ⁇ l ⁇ s ⁇ y 2 (6), and ⁇ luiz ⁇ li ⁇ uyuschey (slab ⁇ legi ⁇ vann ⁇ y) ⁇ dl ⁇ zh ⁇ y 1 (5) for ⁇ iv ⁇ l ⁇ zhn ⁇ y ⁇ ve ⁇ n ⁇ s ⁇ i ⁇ y
  • layer 5 must be made to be satisfactory. If there is any layer 5, it must be made from a dielectric with a small thickness after a short period of time. ⁇ 97/23001 - - ⁇ / ⁇ 96 / 00334
  • Zame ⁇ im, ch ⁇ zavisim ⁇ s ⁇ s ⁇ ivleniya ⁇ ib ⁇ a ( ⁇ miches ⁇ im ⁇ n ⁇ a ⁇ m ⁇ between 1 and ⁇ blas ⁇ i ⁇ blas ⁇ yu 6) ⁇ value u ⁇ avlyayuscheg ⁇ na ⁇ yazheniya ⁇ edelyae ⁇ sya vyb ⁇ m ⁇ my ⁇ blas ⁇ i on ⁇ y vy ⁇ lneny ⁇ v ⁇ dyaschie ⁇ l ⁇ s ⁇ i 3 and ⁇ ilem legi ⁇ vaniya ⁇ - ⁇ ⁇ e ⁇ e ⁇ da (ba ⁇ e ⁇ a Sh ⁇ i)
  • ⁇ sli ⁇ ebue ⁇ sya change quantities s ⁇ ivleniya ⁇ ib ⁇ a in b ⁇ lshi ⁇ ⁇ edela ⁇ , ⁇ in ⁇ m case ⁇ gda ⁇ azme ⁇ ⁇ n ⁇ a ⁇ n ⁇ y ⁇ l ⁇ schad ⁇ i ⁇ ⁇ blas ⁇ i 1 s ⁇ izme ⁇ im with ⁇ azme ⁇ ami ⁇ ib ⁇ a, ⁇ n ⁇ a ⁇ naya ⁇ l ⁇ schad ⁇ a m ⁇ zhe ⁇ by ⁇ put to s ⁇ mi ⁇ vanny diele ⁇ iches ⁇ y sl ⁇ y ⁇ sli not ⁇ ebue ⁇ sya change quantities s ⁇ ivleniya ⁇ ib ⁇ a between ⁇ miches ⁇ im ⁇ n ⁇ a ⁇ m ⁇ ⁇ blas ⁇ i 1 and 6 for the most part, that is, the operating parts 3 performed on the part of the area 1 are not directly connected to the the temperature of the gap between the bands 3 is increased
  • the mains transmission line ( ⁇ ique) was divided into parts (see ⁇ Gupta, ⁇ Garj, ieriwin Chadcha, ⁇ ⁇ maker accompanied 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987 1987
  • the invention makes it possible to create non-hazardous transducers of capacities, varicaps, transformers and adjustable transmission lines
  • the invention may be used in an electronic industrial environment.

Landscapes

  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)

Abstract

Le dispositif à semiconducteur comprend une couche à faible conductivité ou isolante (5) sur une surface de laquelle est formée une section conductrice (6), l'autre face étant dotée d'une couche de semiconducteur (1) du type à trous ou électrons avec un contact ohmique. La couche de semiconducteur ou métallique (2) est ménagée sur la surface de la couche de semiconducteur (1) avec laquelle elle forme une jonction p-n ou une barrière de Schottky avec un autre contact ohmique. Le choix de la section transversale en alliage et de l'épaisseur de la couche (1) est limitée par la condition que ladite couche ou partie de celle-ci doit être complétement appauvrie par les porteurs de charge de base jusqu'au claquage de la jonction p-n et/ou de la barrière de Schottky lorsque cette dernière est soumise à une polarisation extérieure déterminée par l'inégalité illustrée dans la demande. La jonction p-n et/ou la barrière de Schottky peut être formée avec une section de dopant non homogène le long d'une direction X sélectionnée sur la surface de la couche (1). Le long d'une autre direction Z sur la surface de la couche de semiconducteur (1) sont formées des bandes conductrices (3), lesquelles avec la couche (1) forment un contact non redresseur et sont soit connectées au contact ohmique avec (1) ou bien à une certaine distance dudit contact ohmique. Les bandes (3) sont soit connectées aux sections conductrices (4) sur la surface libre de la couche (5), ou la couche (5) est formée sur la partie supérieure des bandes.
PCT/RU1996/000334 1995-12-15 1996-12-02 Dispositif a semiconducteur Ceased WO1997023001A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US09/043,759 US6037650A (en) 1995-12-15 1996-12-02 Variable capacitance semiconductor device

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
RU95121291A RU2117360C1 (ru) 1995-12-15 1995-12-15 Полупроводниковый прибор
RU95121127A RU2108639C1 (ru) 1995-12-15 1995-12-15 Линия передачи
RU95121291 1995-12-15
RU95121127 1995-12-15
RU96101332 1996-01-18
RU96101332/25A RU96101332A (ru) 1996-01-18 Полупроводниковый прибор
RU96116796/25A RU96116796A (ru) 1996-08-14 Полупроводниковый прибор
RU96116796 1996-08-14

Publications (1)

Publication Number Publication Date
WO1997023001A1 true WO1997023001A1 (fr) 1997-06-26

Family

ID=27484445

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/RU1996/000334 Ceased WO1997023001A1 (fr) 1995-12-15 1996-12-02 Dispositif a semiconducteur

Country Status (1)

Country Link
WO (1) WO1997023001A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6369671B1 (en) 1999-03-30 2002-04-09 International Business Machines Corporation Voltage controlled transmission line with real-time adaptive control
DE102015010293A1 (de) 2015-08-07 2017-02-09 Wabco Gmbh Verfahren zum temperaturabhängigen Ansteuern eines Drucksteuerventils sowie Steuereinrichtung hierzu

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU367488A1 (ru) * 1971-05-21 1973-01-23 А. П. Горбань, В. Г. Литовченко , П. Пейков Институт полупроводников Украинской ССР Полупроводниковый варикап
EP0452035A1 (fr) * 1990-04-06 1991-10-16 Ueyama, Ken-ichi Diode semi-conductrice à capacité variable
WO1995031010A1 (fr) * 1994-05-10 1995-11-16 Valery Moiseevich Ioffe Diode varicap

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU367488A1 (ru) * 1971-05-21 1973-01-23 А. П. Горбань, В. Г. Литовченко , П. Пейков Институт полупроводников Украинской ССР Полупроводниковый варикап
EP0452035A1 (fr) * 1990-04-06 1991-10-16 Ueyama, Ken-ichi Diode semi-conductrice à capacité variable
WO1995031010A1 (fr) * 1994-05-10 1995-11-16 Valery Moiseevich Ioffe Diode varicap

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6369671B1 (en) 1999-03-30 2002-04-09 International Business Machines Corporation Voltage controlled transmission line with real-time adaptive control
DE102015010293A1 (de) 2015-08-07 2017-02-09 Wabco Gmbh Verfahren zum temperaturabhängigen Ansteuern eines Drucksteuerventils sowie Steuereinrichtung hierzu

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