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WO1997013891A1 - PROCEDE DE FABRICATION DE COUCHES EPITAXIALES DE GaN OU DE Ga(Al,In)N SUR DES SUBSTRATS MONOCRISTALLINS DE GaN OU MIXTES DE Ga(Al,In)N - Google Patents

PROCEDE DE FABRICATION DE COUCHES EPITAXIALES DE GaN OU DE Ga(Al,In)N SUR DES SUBSTRATS MONOCRISTALLINS DE GaN OU MIXTES DE Ga(Al,In)N Download PDF

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Publication number
WO1997013891A1
WO1997013891A1 PCT/PL1996/000017 PL9600017W WO9713891A1 WO 1997013891 A1 WO1997013891 A1 WO 1997013891A1 PL 9600017 W PL9600017 W PL 9600017W WO 9713891 A1 WO9713891 A1 WO 9713891A1
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WIPO (PCT)
Prior art keywords
gan
nitrogen
substrate
layer
temperature
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/PL1996/000017
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English (en)
Inventor
Jacek M. Baranowski
Micha$m(D) BOCKOWSKI
Izabella Grzegory
Jan Jun
Piotr Krzysztof Korona
Stanis$m(D)aw KRUKOWSKI
Krzysztof PAKU$m(C)A
Sylwester Porowski
Roman Stepniewski
Miros$m(D)aw WRÓBLEWSKI
Andrzej WYSMO$m(C)EK
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CENTRUM BADAN WYSOKOCISNIENIOWYCH
Original Assignee
CENTRUM BADAN WYSOKOCISNIENIOWYCH
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Priority to AU73463/96A priority Critical patent/AU7346396A/en
Publication of WO1997013891A1 publication Critical patent/WO1997013891A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials

Definitions

  • This invention relates to a method of manufacturing of epitaxial layers, and in particular to a method of manufacturing epitaxial layers of pure GaN or mixed Ga(Al,In) composition on a substrate of single crystal of either GaN or Ga(Al, In)N.
  • the method of fabrication of epitaxial layers of Ga(Al,In)N is known, in which AI2O3, SiC or other single crystals are used as substrates.
  • the layers are deposited by Metal Organic Chemical Vapor Deposition (MOCVD) method which employs trimethyllgallium (013)3 Ga, trimethyllaluminum (013)3 Al or trimethyllindium (013)3 In as transport agents for metal atoms and ammonia as a transport agent for the atoms of nitrogen. Hydrogen, nitrogen or their mixture is used as a carrier gas.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • a typical ratio of the reactants, i.e. NH3 to (0.3)3 Ga, (013)3 Al and (013)3111, is in the proximity of 8000:1.
  • buffer layers of GaN or AIN are deposited in the temperatures much lower than that of the main layer in order to reduce the lattice strain.
  • the buffer layers of GaN are deposited in temperatures of about 550 ⁇ C and those of AIN in the temperatures close to 700 ⁇ C.
  • the buffer layers are usually 50 mm thick and are either amo ⁇ hous or polycrystalline.
  • the temperature is raised and the main layer is deposited.
  • the typical temperature of the deposition of the main layers of GaN are close to 1025 ⁇ C.
  • these temperatures are slightly higher than those used for pure GaN and the temperatures of the deposition of layers and crystals of mixed GalnN composition are slightly lower with the deviation depending on the percentage of In and Al.
  • the epitaxial layers and crystals obtained in accordance with the above described method may have high densities of dislocation and other lattice defects, deteriorating their electrical and optical properties.
  • the present invention is directed to a method of manufacturing epitaxial layers and crystals of mixed Ga(Al,In)N composition on the substrate of single pure GaN or mixed composition Ga(Al,In)N.
  • a plate-like single crystals of GaN or Ga(Al,In)N are obtained by the growth of a first layer of the substrate from the supersaturated solution of nitrogen in gallium or Ga(Al,In), preferably in the temperature range, Tl, between approximately 600°C and 2000 ⁇ C, under high pressure of a nitrogen or the nitrogen containing gas mixture, for approximately at least one hour.
  • the pressure is lowered by at least approximately 200 bar and crystallization of a second layer of the substrate is grown at a second temperature, T2, not higher than first temperature, Tl, until the prescribed thickness of the layer is attained.
  • the second layer has a smooth surface on the so called gallium side of the substrate, and rough surface on the so called nitrogen side of the substrate.
  • the epitaxial layers are usually grown on the so-called nitrogen side of the substrate using known methods such Molecular Beam Epitaxy (MBE), Metal Organic Chemical Vapor Deposition (MOCVD), or other similar methods.
  • An additional aspect of the present invention is the growth of the layers or crystals on single crystals of GaN, or on Ga(Al,In)N which has been previously cut perpendicularly to c-axis on the second or nitrogen side and polished.
  • the epitaxial layers or crystals of Ga(Al,In)N are deposited at a temperature between about 750 C and 1200 C under pressure in the range 5 mbar to 2 bar using MOCVD or other known methods. In the temperature range from approximately about 500-900 ⁇ 0, Molecular Beam Epitaxy (MBE) may be used as well, as other related methods.
  • MBE Molecular Beam Epitaxy
  • FIG. 1-10 illustrates the simplified design of the high pressure apparatus for growth of the nitride crystals according one embodiment of the present invention
  • FIG. 2-10 is a schematic illustration of epitaxial growth apparatus according to one embodiment ofthe present invention.
  • FIG. 3-10 illustrates a transverse sectional view of the single plate ⁇ like GaN or mixed Ga(Al,In)N crystal, obtained by growth from supersaturated nitrogen solution in gallium or GaAUn solution in the temperature range 600- 2000 ⁇ C under high pressure of nitrogen or nitrogen containing gas mixture;
  • FIG 4a- 10 illustrates a transverse sectional view of the plate as iUustrated in FIG. 3-10 and shown as grown having a smooth surface and a rough surface;
  • FIG. 4b- 10 illustrates a transverse sectional view of the plate as in FIG.4a-10 after polishing ofthe nitrogen surface.
  • FIG. 5-10 demonstrates the way of the cut of the substrate from single crystal
  • FIG. 6-10 shows the photoluminescence spectrum in the exciton region
  • FIG. 7-10 illustrates a comparison between high energy parts of the spectra ofthe photoluminescence and optical reflection
  • FIG. 8-10 shows the change of the reflection spectrum for various temperatures
  • FIG. 9-10 illustrates the dependence of the energy of free exciton versus temperature
  • FIG. 10-10 shows temperature dependence of the photoluminescence spectra.
  • FIG. 1-10 illustrates a multilayer high pressure chamber 10 for fabricating epitaxial layers of GaN and mixed Ga(Al,In)N crystal on a substrate of single crystal GaN or mixed crystal Ga(Al,In)N according to the present invention.
  • a single piece or sample 26 of metallic gallium, Ga is placed in a crucible 12 having upper end 13 and lower end 15, and which is made of hexagonal boron nitride (BN) ceramic which is highly resistant to high temperatures and aggressive chemical environments.
  • crucible 12 is placed in the three-zone furnace 14 designed for work at high gas pressures and which allows for the independent control of three temperatures.
  • Furnace 14 is located inside multilayer chamber 10, which is evacuated to a high vacuum via output 24, and subsequently nitrogen gas is pumped in via input 22 until a pressure equal to 10 kbar is attained.
  • Furnace 14 consists of three temperature zones 16, 18, and 20, each zone including a heating spiral which is supplied with electric currents of different values.
  • the temperature control system operating through the heating spirals in zones 16, 18 and 20 set the temperature T g of zone 18 equal to about 1410 ⁇ C and the temperature T j of zone 16 equal to about 1350 ⁇ C.
  • Furnace 14 with crucible 12 is then placed in high pressure chamber 10.
  • Crucible 12 is placed near zone 16 with temperature T and zone 18 with higher temperature T tribe, such that furnace 14 causes a temperature gradient in gallium sample 26.
  • Chamber 10 is then filled with nitrogen gas or a gas mixture containing a percentage of nitrogen, thus exposing gallium sample 26 to a pressure of nitrogen or partial nitrogen pressure.
  • Temperatures Tj and T g are both above the melting point of gallium, and the nitrogen pressure is controlled such that the gallium sample 26 remains in the form of a liquid solution. Since the temperature Tg in zone 18 is lower than the temperature of stable gallium for a given nitrogen pressure, such as 10 kbar, a surface reaction occurs which leads to the creation of a GaN polycrystalline layer in the region of zone 18. As a result, the contact between liquid Ga and nitrogen is terminated.
  • zone 16 and zone 18 The temperature difference between zone 16 and zone 18 leads to different solubilities and concentrations of nitrogen in the liquid Ga, which in turn, lead to transport ofthe nitrogen from zone 16 to zone 18.
  • the nitrogen concentration in zone 16 is higher than the equilibrium concentration at the lower end 15 of crucible 12 which is at a temperature of approximately 1350 ⁇ C, leading to the supersaturation of nitrogen solution in the liquid gallium. Consequently, a bulk crystal 28 of GaN substrate grows and forms the first layer ofthe substrate.
  • the pressure of nitrogen is advantageously decreased by about 1000 bar.
  • the equilibrium temperature at this pressure is, therefore, lower than the temperature at zone 18 and is higher than the temperature of the GaN stability.
  • the GaN surface crystalline layer then decomposes in zone 18 and the nitrogen concentration decreases.
  • the nitrogen concentration in zone 18 depends on the gas pressure. Consequently, the supersaturation in zone 16 can accordingly be controlled by the change of the gas pressure. This allows for the reduction of the supersaturation in the growth zone and reduction of the growth rate as well as additional control over the properties ofthe new layer. In particular the structure ofthe grown layer is considerably improved in this stage.
  • the nitrogen pressure is lowered by about 1000 bar for about one hour. During that one hour, the thickness of the layer increases by approximately 10" ⁇ mm.
  • the width ofthe Bragg peak of x-ray diffraction on the first layer which was grown at a faster rate is equal to approximately 28-32 arc sec, whereas for the second layer with the slower growth, the Bragg peak of x-ray diffraction for the same structure is equal to 20-24 arc sec.
  • the GaN crystal 28 obtained in this process has a plate-like shape, with two dominant surfaces pe ⁇ endicular to the c- axis of the crystal lattice.
  • the first surface 30 is a smooth, so called gallium side, and the opposite surface 32 is rough, so called nitrogen side which consists of pyramids, ridges and ribs.
  • the substrate is transferred to an MOCVD reactor.
  • the reactor which is schematically illustrated in FIG. 2-10, comprises chamber 100, gas containers 110, 112 for ammonia (NH3 ) and trimehylgallium (TMG), respectively, and pressure gauge 114, and flow mass controllers 116.
  • NH3 ammonia
  • TMG trimehylgallium
  • a subsequent epitaxial layer is deposited on the rough side 32 at a temperature of approximately lOOO ⁇ C, using hydrogen, H2 as a carrier gas and with the reactant ratio of NH3 to TMG of approximately 8000: 1.
  • the grown epitaxial layer After approximately one hour, the grown epitaxial layer, has crystallographic qualities comparable to that of the underlying substrate with a density of the dislocation of approximately 10" ⁇ cm"2> and with extremely narrow photoluminescence peaks.
  • a comparison of the photoluminescence and the reflection spectra allows for the identification of the free exciton lines in the photoluminescence spectrum. The presence of free exciton lines is an indication of the remarkable quality of this grown epitaxial layer in accordance with one embodiment ofthe present invention.
  • FIG. 8-10 illustrates the change of the reflection spectra related to free excitons which can be observed in the temperature range 4.2 - 390 K.
  • the temperature range of 4.2 - 390 K as illustrated in FIG. 8-10 characterizes a substantially wide temperature range of free exciton lines, which is an additional indication of the quality of the grown layer.
  • the dependence of the energy of the exciton on the temperature, presented in FIG. 9-10, can be expressed as:
  • E 0 is the exciton energy extrapolated to a temperature equal to 0 K.
  • the exitonic part of the photoluminescence spectrum at temperature 4.2 K is seen in FIG. 6-10.
  • the temperature dependence of the photoluminescence spectrum is presented in FIG. 10-10, where it can be seen that the 3.4646 eV line and the low energy structure disappears for the temperatures higher than 40K. On the contrary, high energy intensity grows. For the temperature range of 70 - 100K, this line decreases dramatically as shown by line B in FIG. 7-10.
  • the low energy part ofthe photoluminescence spectrum consists of narrow line of the energy at about 3.4646eV and rectangular band in the range of about 3.454 - 3.464 eV. Despite the fact that this part is the most distant from the free exciton energy, the temperature dependence suggests that it has the lowest activation energy. This part of the spectrum has not been observed in the past, but is now observed for the layers obtained according to the method ofthe present invention.
  • a single piece or sample 26 of metallic gallium is placed in crucible 12 as illustrated in FIG. 1-10, and undergoes the method of the growth described hereinabove in the Example 1 until a crystal is obtained having the form of a platelet dimensions of approximately 0.5 mm x 2 mm x 2 mm.
  • the width of the Bragg peak of this crystal is approximately 28-35 arc sec.
  • the crystal has two surfaces, pe ⁇ endicular to the c-axis ofthe crystal lattice; the gallium side 30, which is substantially smooth, and the nitrogen side 32, which is substantially rough and consists of pyramids, ridges, a ribs, as illustrated in FIG. 4a- 10.
  • the crystal platelet is subsequently polished until it is optically smooth, as shown in FIG. 4b- 10.
  • a layer of Ga(Al,In)N is deposited on the rough nitrogen side 32 at a deposition temperature of approximately 1000 ⁇ C, and with a reactant ratio of NH3 to TMG of approximately 8000: 1, with hydrogen used as a carrier gas.
  • the obtained layer has crystallographic qualities close to the substrate, with a dislocation density below 10 ⁇ cm"2.
  • the photoluminescence lines are extremely narrow.
  • the main peak related to the bound exciton has width smaller than 1 meV. This width is substantially smaller than that which has been reported in the prior art to date.
  • a single piece or sample of metallic gallium 26 is placed in the crucible 12 as illustrated in FIG.1-10, and undergoes the method of growth described hereinabove in Example 1.
  • a GaN single crystal is obtained having dimensions of approximately 8 mm x 4 mm.
  • the obtained GaN crystal has a polyhedral shape corresponding to the main crystallographic axes ofthe wurtzite structure.
  • One ofthe surfaces ofthe crystal is the nitrogen side 32 as illustrated in FIG. 4a- 10, and is pe ⁇ endicular to the c-axis ofthe crystal lattice.
  • the GaN crystal is then cut at 33 as illustrated in FIG. 5-10, into small plates or wafers pe ⁇ endicular to the c-axis of the crystal lattice. Subsequently these plates or wafers are polished on the nitrogen side 32, and the layers are then deposited on each of the plates using the method described hereinabove in Example 2.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Procédé de fabrication de couches épitaxiales de GaN ou mixtes de Ga(Al,In)N sur des substrats monocristallins de GaN ou de Ga(Al,In)N par des procédés connus de croissance épitaxiale à partir d'une phase liquide ou vapeur, dans lequel les substrats sont des monocristaux lamellaires de GaN ou de Ga(Al,In)N obtenus par cristallisation de la première couche du substrat à partir d'une solution sursaturée d'azote dans une solution de gallium ou de GaAlIn dans une plage de températures T1 allant de 600 à 2000 °C, et ce sous haute pression d'azote pur ou d'un mélange gazeux renfermant de l'azote. Ensuite, le procédé consiste à cristalliser une seconde couche ou couche épitaxiale sur le substrat à une température T2 égale ou inférieure à T1 après avoir réduit la pression du gaz d'au moins 200 bar jusqu'à ce que la seconde couche présente l'épaisseur voulue. La couche épitaxiale est formée sur la première couche par dépôt chimique métal-oxyde en phase vapeur ou par épitaxie par faisceaux moléculaires, et elle est caractérisée en ce qu'elle présente une surface lisse de gallium sur une première face et une surface rugueuse d'azote sur une seconde face sur laquelle la croissance épitaxiale s'effectue selon les procédés connus.
PCT/PL1996/000017 1995-10-13 1996-10-11 PROCEDE DE FABRICATION DE COUCHES EPITAXIALES DE GaN OU DE Ga(Al,In)N SUR DES SUBSTRATS MONOCRISTALLINS DE GaN OU MIXTES DE Ga(Al,In)N Ceased WO1997013891A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU73463/96A AU7346396A (en) 1995-10-13 1996-10-11 Method of manufacturing epitaxial layers of gan or ga(a1,in)n on single crystal gan and mixed ga(a1,in)n substrates

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Application Number Priority Date Filing Date Title
PLP.310929 1995-10-13
PL31092995 1995-10-13

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WO1997013891A1 true WO1997013891A1 (fr) 1997-04-17

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998055671A1 (fr) * 1997-06-05 1998-12-10 Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk PROCEDE DE FABRICATION DE CRISTAUX DE GaN MASSIFS ET HAUTEMENT RESISTIFS
EP0887436A1 (fr) * 1997-06-25 1998-12-30 Sony Corporation Méthode et appareil de croissance d'un composé semiconducteur nitrure III-V
CN1044840C (zh) * 1997-07-24 1999-08-25 北京大学 GaN/Al2O3复合材料在Ⅲ－V族氮化物外延生长中做衬底的方法
EP0951077A3 (fr) * 1998-04-14 1999-12-15 Matsushita Electronics Corporation Procédé de croissance de semiconducteurs composés comprenant azote
CN1062917C (zh) * 1998-08-12 2001-03-07 北京大学 铟镓氮单晶薄膜金属有机物气相外延生长技术
GB2363518A (en) * 2000-06-17 2001-12-19 Sharp Kk A method of growing a nitride layer on a GaN substrate
US6398867B1 (en) 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
WO2004053209A1 (fr) * 2002-12-11 2004-06-24 Ammono Sp. Z O.O. Substrat modele type et procede de preparation de celui-ci
WO2004053208A1 (fr) * 2002-12-11 2004-06-24 Ammono Sp. Z O.O. Procede d'obtention de nitrure contenant des monocristaux de gallium massifs
WO2006065160A1 (fr) * 2004-12-15 2006-06-22 Instytut Wysokich Cisnien Polskiej Akademii Nauk Procede de fabrication de couches epitaxiales inx alyga1-x-yn dopees, couche epitaxiale inxalyga1-x-yn dopee et structure multicouche a semi-conducteurs comprenant au moins une couche epitaxiale inxalyga1-x-y
CN1329561C (zh) * 2002-12-11 2007-08-01 阿莫诺公司 模板型衬底及其制造方法
US7589358B2 (en) 2002-05-17 2009-09-15 Ammono Sp. Z O.O. Phosphor single crystal substrate and method for preparing the same, and nitride semiconductor component using the same
US7744697B2 (en) 2001-06-06 2010-06-29 Nichia Corporation Bulk monocrystalline gallium nitride
WO2010075653A1 (fr) * 2008-12-31 2010-07-08 深圳市方大国科光电技术有限公司 Procédé servant à augmenter le rendement lumineux en rugosifiant la surface d'une plaquette épitaxique d'une diode électroluminescente

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FR2313976A1 (fr) * 1975-06-13 1977-01-07 Labo Electronique Physique Procede de fabrication de monocristaux de nitrure de gallium et monocristaux obtenus par la mise en oeuvre de ce procede
EP0371771A2 (fr) * 1988-11-29 1990-06-06 Alcan International Limited Procédé de production de nitrure d'aluminium et nitrure d'aluminium obtenu
WO1995004845A1 (fr) * 1993-08-10 1995-02-16 Centrum Badan Wysokocisnieniowych Structure multicouche cristalline et son procede de fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2313976A1 (fr) * 1975-06-13 1977-01-07 Labo Electronique Physique Procede de fabrication de monocristaux de nitrure de gallium et monocristaux obtenus par la mise en oeuvre de ce procede
EP0371771A2 (fr) * 1988-11-29 1990-06-06 Alcan International Limited Procédé de production de nitrure d'aluminium et nitrure d'aluminium obtenu
WO1995004845A1 (fr) * 1993-08-10 1995-02-16 Centrum Badan Wysokocisnieniowych Structure multicouche cristalline et son procede de fabrication

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998055671A1 (fr) * 1997-06-05 1998-12-10 Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk PROCEDE DE FABRICATION DE CRISTAUX DE GaN MASSIFS ET HAUTEMENT RESISTIFS
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JP2006509709A (ja) * 2002-12-11 2006-03-23 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン テンプレート型基板及びその製造方法
JP4860927B2 (ja) * 2002-12-11 2012-01-25 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシ用基板及びその製造方法
CN1329561C (zh) * 2002-12-11 2007-08-01 阿莫诺公司 模板型衬底及其制造方法
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WO2004053208A1 (fr) * 2002-12-11 2004-06-24 Ammono Sp. Z O.O. Procede d'obtention de nitrure contenant des monocristaux de gallium massifs
WO2004053209A1 (fr) * 2002-12-11 2004-06-24 Ammono Sp. Z O.O. Substrat modele type et procede de preparation de celui-ci
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WO2010075653A1 (fr) * 2008-12-31 2010-07-08 深圳市方大国科光电技术有限公司 Procédé servant à augmenter le rendement lumineux en rugosifiant la surface d'une plaquette épitaxique d'une diode électroluminescente

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