WO1997011475A1 - Circuit breaker - Google Patents
Circuit breaker Download PDFInfo
- Publication number
- WO1997011475A1 WO1997011475A1 PCT/JP1995/001877 JP9501877W WO9711475A1 WO 1997011475 A1 WO1997011475 A1 WO 1997011475A1 JP 9501877 W JP9501877 W JP 9501877W WO 9711475 A1 WO9711475 A1 WO 9711475A1
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- WO
- WIPO (PCT)
- Prior art keywords
- current
- circuit breaker
- output
- carrying conductor
- conductor
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/205—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using magneto-resistance devices, e.g. field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H71/00—Details of the protective switches or relays covered by groups H01H73/00 - H01H83/00
- H01H71/10—Operating or release mechanisms
- H01H71/12—Automatic release mechanisms with or without manual release
- H01H71/123—Automatic release mechanisms with or without manual release using a solid-state trip unit
- H01H71/125—Automatic release mechanisms with or without manual release using a solid-state trip unit characterised by sensing elements, e.g. current transformers
Definitions
- the present invention relates to a circuit breaker having current detection means for electromagnetically detecting a current in an electric circuit, and more particularly to a circuit breaker suitable for simplifying the configuration of current detection means.
- a current transformer is used as a current detection sensor as disclosed in Japanese Patent Application Laid-Open No. H05-236636.
- a Hall element As disclosed in Japanese Unexamined Patent Publication No. 57-59426, the use of a Hall element as a current detection sensor is known.
- a compact and economical current sensor can be obtained.However, the output voltage of the Hall element is small and the main circuit current can be reliably detected in a small current region. There is a problem of difficulty. In order to solve this problem, the main circuit conductor must be penetrated into the hollow using a magnetic ring to increase the output voltage of the Hall element by increasing the magnetic flux density around the main circuit conductor. Weird It is necessary to adopt the same configuration as that using a flow device. Therefore, the workability at the time of assembling is not improved even if the Hall element is used.
- An object of the present invention is to provide a circuit breaker which is excellent in workability at the time of assembling and has a small mounting space in order to solve the above problems.
- the above purpose is to provide a circuit breaker that has switching means in a current-carrying conductor from a power-supply-side terminal to a load-side terminal and opens the switching means when a current flowing through the current-carrying conductor reaches a predetermined condition.
- a magnetoresistive element hereinafter referred to as an MR element placed close to the current-carrying conductor, and based on the output of this MR element, generates an output when the current flowing through the current-carrying conductor reaches a predetermined condition.
- This is achieved by providing a control means for performing the operation and a trip means for opening the opening / closing means by being driven by the output of the control means.
- the above object is achieved by adopting a configuration in which a bias magnetic field that can be arbitrarily adjusted is applied to the MR element.
- the MR element generally has an order of magnitude higher sensitivity than the Hall element, it is possible to accurately detect the main circuit current in a small current region without using a magnetic ring or the like.
- the main circuit current detection range can be increased as compared with the case where a ferromagnetic MR element is used.
- both A magnetic bias is added to the MR element, and the magnetic bias strength is controlled according to the magnetic field strength to be detected. This makes it possible to arrange a pair of MR elements at close positions, that is, at substantially the same position.
- the magnetic bias strength is controlled by adjusting the exciting current of the magnetic bias applying coil.
- FIG. 1 is a cross-sectional view showing the overall configuration of a circuit breaker according to one embodiment of the present invention.
- FIG. 2 is a cross-sectional view of a circuit breaker according to one embodiment of the present invention, showing a positional relationship between an MR element and a main circuit conductor, in a direction perpendicular to the direction of conduction of the main circuit conductor.
- FIG. 3 is a perspective view showing a state where the MR element of the circuit breaker according to the embodiment of the present invention is attached to a main circuit conductor.
- FIG. 4 is a waveform diagram illustrating the operation of the current detecting means using the MR element of the circuit breaker according to one embodiment of the present invention.
- FIG. 4 (a) shows the operation in the low magnetic flux density region
- FIG. Panel b) shows the operation when a bias magnetic field is applied.
- FIG. 5 is a circuit diagram showing a configuration of a current detecting means using an MR element of a circuit breaker according to one embodiment of the present invention.
- FIG. 5 (a) is a basic circuit configuration, and FIG. It is a figure which shows the circuit structure which compensated, respectively.
- FIG. 6 is a circuit diagram of current detection means for generating a differential output by performing temperature compensation using the MR element of the circuit breaker according to one embodiment of the present invention. is there.
- FIG. 7 is a cross-sectional view of a circuit breaker according to one embodiment of the present invention, showing a positional relationship between the MR element and the main circuit conductor when a bias is applied, taken in a direction perpendicular to the direction of current flow in the main circuit conductor.
- FIG. 8 is a waveform diagram illustrating the operation of the current detecting means of the circuit breaker according to one embodiment of the present invention.
- FIG. 9 is a waveform diagram illustrating a bias control operation of the current detecting means of the circuit breaker according to one embodiment of the present invention.
- FIG. 10 is a waveform diagram illustrating a bias control operation of the current detecting means of the circuit breaker according to one embodiment of the present invention.
- FIG. 11 is a block diagram showing a circuit configuration of a circuit breaker according to one embodiment of the present invention.
- Fig. 12 is a characteristic diagram explaining the time limit characteristics of a general circuit breaker.
- FIG. 13 is a cross-sectional view of the circuit breaker according to one embodiment of the present invention, showing a positional relationship between the MR element housing and the main circuit conductor, in a direction perpendicular to the direction of current flow of the main circuit conductor.
- FIG. 14 is a perspective view showing a state in which the MR element housing of the circuit breaker according to one embodiment of the present invention is mounted on a load-side conductor.
- FIG. 15 is a cross-sectional view of the circuit breaker of one embodiment of the present invention, showing a state in which the MR element housing is fixed to the case, in a direction perpendicular to the direction of current flow of the main circuit conductor.
- FIG. 1 shows the overall configuration of the circuit breaker of this embodiment.
- a current sensor using the MR element 30 is attached to a conductor of the main circuit, and the current of the main circuit is detected by the MR element 30.
- a current-carrying conductor 10 extending from the power supply terminal 4 to the load terminal 6 is provided below the case 1 in the case 3 which is a case 1 and a housing 3.
- the current-carrying conductor 10 is connected to the fixed conductor 11 provided with the power supply side terminal 4 at one end, the flexible conductor 12 connected to the fixed conductor 11, and the flexible conductor 12, and turned to the pin 14.
- the movable contact block 17 provided, the flexible conductor 18 connected to the movable contact block 17, and the load-side conductor 19 connected to the flexible conductor 18 and provided with the load-side terminal 6. It depends.
- An arc extinguishing device 20 is provided around the repulsive contact 15 and the movable contact 16.
- the movable contact block 17 is operated by an opening / closing mechanism 22 disposed above it to open and close the electric circuit.
- the repulsive contact 15, the movable contact 16, and the opening / closing mechanism 22 function as opening / closing means, and the opening / closing mechanism 22 is normally turned ON / OFF by manual operation of the handle 24.
- the tripping device 26 as a tripping means operates due to overcurrent or the like, the tripping operation is performed by automatically opening the electric circuit.
- the overcurrent is detected by electrically connecting the MR element 30 provided in close proximity to the load-side conductor 19 and the MR element 30.
- the control is performed by a control circuit 40 as control means connected to the control circuit.
- the MR element 30 and the control circuit 40 are connected by a lead wire 42.
- the control circuit 40 is an electronic circuit assembled on a board, and includes an analog circuit, a logic circuit, and It is composed of a micro computer and the like.
- the control circuit 40 determines that the current detected by the MR element exceeds a predetermined condition, that is, exceeds a certain reference value, is an overcurrent, and generates an output for tripping.
- the state of attachment of the MR element 30 to the load-side conductor 19 will be described with reference to FIGS.
- the MR element 30 is housed in an MR element housing 34 made of an insulating material to be insulated from the load-side conductor 19, and is fixed to the load-side conductor 19 by a screw 32. Lead wires 42 are drawn out from the MR element housing 34.
- MR elements There are two types of MR elements: semiconductor MR elements and ferromagnetic MR elements.
- a semiconductor MR element has a characteristic that the resistance of the element increases with an increase in the absolute value of the magnetic flux density, and the magnetic flux density is up to 1 Tesla (10,000 Gauss) or more.
- the resistance value that can obtain this characteristic can be arbitrarily created, for example, a resistance value of several k ⁇ can be created.
- the change in the resistance value is also large, for example, about 1 k ⁇ at 0 Tesla and about 5 k ⁇ at 1 Tesla, which is about 5 times the change.
- a ferromagnetic MR element has the characteristic that it has the maximum resistance value at zero magnetic flux density, decreases as the absolute value of magnetic flux increases, and saturates at a certain magnetic flux density. ing.
- the change in the resistance value is about several percent of the initial value, and the saturation magnetic flux density ranges from several tens of gauss (several milliliters) to several hundred gauss (several tens of milliliters). (Slurry), and the range that can be used as a sensor is much smaller than that of a semiconductor MR element. Therefore, when a semiconductor MR element is used, it can be applied up to a high magnetic field, and the main circuit current detection range can be enlarged, as compared with the case where a ferromagnetic MR element is used.
- the MR element 30 used in the present embodiment is a semiconductor MR element, and its characteristics are such that the element resistance changes in accordance with the applied magnetic flux density as shown in FIG. .
- the MR element 30 has a low sensitivity in the low magnetic flux density region and a small resistance change rate, so that the bias magnetic field is applied by a magnet.
- the operating point is shifted and used in the high sensitivity area. This is possible by applying an arbitrarily adjustable bias magnetic field to the MR element.
- the sensitivity of the MR element 30 is generally one order of magnitude higher than that of the Hall element, it is possible to reliably detect the main circuit current in a small current region without using a magnetic ring or the like.
- the MR element 30 When the MR element 30 is used as a current sensor, it only needs to be arranged near the conductor to be energized, and the annular magnetic ring used in the case of the ball element need not be used. For this reason, the work of penetrating the conductor through the annular magnetic ring is not required, and the workability at the time of assembly can be improved. Also, since it is only necessary to dispose the MR element 30 near the conductor, the mounting The base can be reduced.
- the MR element 30 basically uses a configuration in which the control voltage Vcc is divided by the external resistor r and the MR element 30 as shown in FIG. 5 (a), and is shown in FIG. Using the fact that the resistance value R2 of the MR element changes according to the magnetic flux density according to the characteristics and the voltage dividing ratio of the control voltage Vcc changes, the output change is used as a detection signal. It is used.
- the MR element generally has poor temperature characteristics.
- two MR elements 30 and 30a are used as a countermeasure as shown in Fig. 5 (b).
- the element 30a is used for temperature compensation
- the other MR element 30 is used for magnetic flux detection.
- the output is often extracted in the form of a difference.
- MR elements are used as a pair for temperature characteristic compensation
- a magnetic bias is applied to both MR elements, and the magnetic bias strength is controlled according to the magnetic field strength to be detected.
- This makes it possible to arrange a pair of MR elements at a close position, that is, at substantially the same position.
- a magnetic bias is applied by a coil to adjust the exciting current. It is done by adjusting. That is, in the present embodiment, by applying a magnetic bias in the opposite direction also to the MR element for temperature compensation, a function for magnetic detection is provided and the arrangement at the same position is performed. It is possible.
- the force applied to the MR element by bias is applied to the MR element by a coil; of course, a magnet may be used.
- the advantage of using a coil is that, for example, when a detected magnetic flux that is equal to or greater than the set bias is applied as shown in Fig. 9, there is an area where the change in resistance value reverses. As shown in Fig. 10, it is easy to change the amount of the magnetic flux depending on the magnitude of the magnetic flux.
- Fig. 11 is a block diagram of the circuit configuration in the embodiment. After the current flowing in the circuit is detected by the MR element, the current is input to the MPU via the AZD converter, and the input is input to the MPU. Based on the signal, the time limit characteristic of the circuit breaker as shown in Fig. 12 is controlled.
- the MR element 30 for each phase is integrally formed of three phases. Then, it is stored in the MR element housing 36 and fixed to the bottom of the case 1 by screws 32.
- Figure 14 shows the MR element housing 36 placed on the load-side conductor 19.
- the MR element housing 36 has a positioning projection 36a formed at the lower portion thereof, and a projection 36b for mounting the control circuit 40 formed thereon at the upper portion thereof.
- the positioning projections 36a are formed between the load-side conductors 19 of each pole, and between the load-side conductors 19 of both poles and the side surface of the case 1.
- FIG. 13 is a cross-sectional view showing a part of the MR element housing 36 that houses the MR element.
- the MR element 30 is embedded in the insulator so that it is above the load-side conductor 19 and close to the load-side conductor 19, as shown in Fig. 13. It is fixed on the insulating partition between the conductors at the bottom of case 1 by screws 32.
- FIG. 15 shows a state in which the MR element housing 36 is fixed to the case 1.
- a lead wire 42 is drawn upward from the MR element housing 36 and connected to the control circuit 40 mounted on the MR element housing 36.
- the illustration of the screw 32 is omitted.
- the MR element which generally has an order of magnitude higher sensitivity than the Hall element, is used as a current sensor for a circuit breaker.
- the magnetic ring used for main circuit current detection can be eliminated, and the size and weight of the circuit breaker can be reduced.
- the current detection sensor can be mounted simply by mounting the body 34 or 36 on the load-side conductor 19, which simplifies the manufacturing process and reduces the number of manufacturing steps. .
- the current in the load-side conductor 19 is detected by the MR element 30.
- the position where the current is detected may be the fixed conductor 11 on the power supply side.
- the opening / closing means a mechanical one composed of a repulsive contact 15, a movable contact 16 and an opening / closing mechanism 22 is used, but a thyristor or the like is used.
- a non-contact type using a semiconductor for power switching may be used.
- the overcurrent is detected, but the vector sum of the current of each pole detected by the microcomputer is calculated to calculate the ground fault current. Or, it may be configured to detect the leakage current.
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Abstract
Description
回路 ii¾ T¾ Circuit ii¾ T¾
技術分野 Technical field
こ の発明は電磁気的に電路の電流を検出する電流検出手段 を有する 回路遮断器に係 り 、 特に電流検出手段の構成の簡略 化に好適な回路遮断器に関する。 The present invention relates to a circuit breaker having current detection means for electromagnetically detecting a current in an electric circuit, and more particularly to a circuit breaker suitable for simplifying the configuration of current detection means.
背景技術 Background art
従来の こ の種の技術 と しては、 例えば特開平 0 5 — 2 3 6 6 3 3 号公報に開示 されている よ う に変流器を電流検出用セ ンサ と して用いた も の、 または特開昭 5 7 - 5 9 4 2 6 号公 報に開示 されている よ う にホール素子を電流検出用セ ンサ と して用いた ものが知 られている。 As a conventional technique of this kind, for example, a current transformer is used as a current detection sensor as disclosed in Japanese Patent Application Laid-Open No. H05-236636. As disclosed in Japanese Unexamined Patent Publication No. 57-59426, the use of a Hall element as a current detection sensor is known.
従来の技術では、 変流器を用いた も のは主回路導体が環状 鉄心 (磁気 リ ング) の中空部を貫通する構成であ る ため、 組 立時の作業性が悪い と と も に、 特開昭 5 7 — 5 9 4 2 6 号公 報で指摘 している よ う に実装ス ペー ス が大き く な る と レ、 う 問 題があっ た。 In the conventional technology, current transformers have a structure in which the main circuit conductor penetrates through the hollow part of the annular iron core (magnetic ring). As pointed out in the Bulletin No. 5 — 594 426, there was a problem when the mounting space became large.
ま た、 ホール素子を用いた も のは、 コ ンパク ト で経済性の よ い電流セ ンサを得 られる が、 ホール素子の出力電圧が小さ く 小電流領域での主回路電流の確実な検出が困難 と い う 問題 があ る。 こ の問題を解決する ために、 主回路導体回 り の磁束 密度を高めてホール素子の出力電圧を高め る よ う 、 磁気 リ ン グを併用 してその中空部に主回路導体を貫通 させる と い う 変 流器を用 いた も の と 同様な構成の採用が必要にな る。 そのた め、 ホール素子を用 いた も ので も組立時の作業性は改善 さ れ ない。 In the case of using a Hall element, a compact and economical current sensor can be obtained.However, the output voltage of the Hall element is small and the main circuit current can be reliably detected in a small current region. There is a problem of difficulty. In order to solve this problem, the main circuit conductor must be penetrated into the hollow using a magnetic ring to increase the output voltage of the Hall element by increasing the magnetic flux density around the main circuit conductor. Weird It is necessary to adopt the same configuration as that using a flow device. Therefore, the workability at the time of assembling is not improved even if the Hall element is used.
発明の開示 Disclosure of the invention
本発明の 目 的は、 上記問題点を解決する為に、 組立時の作 業性に優れ、 しか も実装ス ペー ス が小 さ い回路遮断器を提供 する こ と にあ る。 An object of the present invention is to provide a circuit breaker which is excellent in workability at the time of assembling and has a small mounting space in order to solve the above problems.
上記 目 的は、 電源側端子か ら負荷側端子に至る通電導体中 に開閉手段を有 し 、 通電導体を流れる 電流が所定の条件にな つ た と き に開閉手段を開 く 回路遮断器において、 通電導体に 近接 して配置 さ れた磁気抵抗素子 (以下 M R 素子) と 、 こ の M R 素子の出力 に基づいて通電導体を流れる 電流が所定の条 件にな っ た と き に出力 を発生する制御手段 と 、 こ の制御手段 の出力 に よ り 駆動 さ れて開閉手段を開 く 引外 し手段を設け る こ と に よ り 達成 さ れる。 The above purpose is to provide a circuit breaker that has switching means in a current-carrying conductor from a power-supply-side terminal to a load-side terminal and opens the switching means when a current flowing through the current-carrying conductor reaches a predetermined condition. A magnetoresistive element (hereinafter referred to as an MR element) placed close to the current-carrying conductor, and based on the output of this MR element, generates an output when the current flowing through the current-carrying conductor reaches a predetermined condition. This is achieved by providing a control means for performing the operation and a trip means for opening the opening / closing means by being driven by the output of the control means.
ま た、 上記 目 的は、 M R素子に任意に調整可能なバ イ ア ス 磁界を印加す る構成 と する こ と に よ り 達成 さ れる。 Further, the above object is achieved by adopting a configuration in which a bias magnetic field that can be arbitrarily adjusted is applied to the MR element.
M R素子はホール素子に比べ一般に感度が一桁大き いの で 磁気 リ ング等 を用 いな く て も小電流領域での主回路電流の確 実な検出ができ る。 M R 素子 と し て高磁界ま で適用でき る 半 導体 M R素子を用 いる と 、 強磁性体 M R 素子を用いた場合に 比べ、 主回路電流検出範囲を大き く する こ と ができ る。 Since the MR element generally has an order of magnitude higher sensitivity than the Hall element, it is possible to accurately detect the main circuit current in a small current region without using a magnetic ring or the like. When a semiconductor MR element that can be applied up to a high magnetic field is used as the MR element, the main circuit current detection range can be increased as compared with the case where a ferromagnetic MR element is used.
温度特性補償用 と して M R素子を対で用い る場合には双方 の M R 素子に磁気バ イ ア ス を加え 、 検出すべき磁界強度に応 じて磁気バ イ ア ス強度を制御する。 これに よ り 一対の M R 素 子を近接 した位置、 すなわち実質的に同一位置への配置を可 能 と する 。 磁気バ イ ア ス 強度の制御は磁気バ イ ア ス印加用 コ ィ ノレの励磁電流を調整する こ と に よ り 行 う 。 When MR elements are used as a pair for temperature characteristic compensation, both A magnetic bias is added to the MR element, and the magnetic bias strength is controlled according to the magnetic field strength to be detected. This makes it possible to arrange a pair of MR elements at close positions, that is, at substantially the same position. The magnetic bias strength is controlled by adjusting the exciting current of the magnetic bias applying coil.
図面の簡単な説明 BRIEF DESCRIPTION OF THE FIGURES
【 図 1 】 本発明の一実施例の回路遮断器の全体構成を示す断 面図であ る。 FIG. 1 is a cross-sectional view showing the overall configuration of a circuit breaker according to one embodiment of the present invention.
【図 2 】 本発明の一実施例の回路遮断器の M R 素子 と 主回路 導体の位置関係を示す主回路導体の通電方向 と 直交方向の断 面図であ る。 FIG. 2 is a cross-sectional view of a circuit breaker according to one embodiment of the present invention, showing a positional relationship between an MR element and a main circuit conductor, in a direction perpendicular to the direction of conduction of the main circuit conductor.
【図 3 】 本発明の一実施例の回路遮断器の M R 素子の主回路 導体への取付状態を示す斜視図であ る。 FIG. 3 is a perspective view showing a state where the MR element of the circuit breaker according to the embodiment of the present invention is attached to a main circuit conductor.
【図 4 】 本発明の一実施例の回路遮断器の M R 素子を用いた 電流検出手段の動作を説明する 波形図で、 同図 ( a ) は低磁 束密度領域での動作、 同図 ( b ) はバ イ ア ス磁界を加えた と き の動作をそれぞれ示す図であ る。 FIG. 4 is a waveform diagram illustrating the operation of the current detecting means using the MR element of the circuit breaker according to one embodiment of the present invention. FIG. 4 (a) shows the operation in the low magnetic flux density region, and FIG. Panel b) shows the operation when a bias magnetic field is applied.
【図 5 】 本発明の一実施例の回路遮断器の M R 素子を用いた 電流検出手段の構成を示す回路図で、 同図 ( a ) は基本的回 路構成、 同図 ( b ) は温度補償を した回路構成をそれぞれ示 す図であ る。 FIG. 5 is a circuit diagram showing a configuration of a current detecting means using an MR element of a circuit breaker according to one embodiment of the present invention. FIG. 5 (a) is a basic circuit configuration, and FIG. It is a figure which shows the circuit structure which compensated, respectively.
【図 6 】 本発明の一実施例の回路遮断器の M R 素子を用いて 温度補償を して差分出力 を発生する電流検出手段の回路図で ある。 FIG. 6 is a circuit diagram of current detection means for generating a differential output by performing temperature compensation using the MR element of the circuit breaker according to one embodiment of the present invention. is there.
【図 7 】 本発明の一実施例の回路遮断器でバ イ ア ス を印加 し た場合の M R 素子 と 主回路導体の位置関係を示す主回路導体 の通電方向 と 直交方向の断面図であ る。 FIG. 7 is a cross-sectional view of a circuit breaker according to one embodiment of the present invention, showing a positional relationship between the MR element and the main circuit conductor when a bias is applied, taken in a direction perpendicular to the direction of current flow in the main circuit conductor. You.
【図 8 】 本発明の一実施例の回路遮断器の電流検出手段の動 作を説明する 波形図であ る。 FIG. 8 is a waveform diagram illustrating the operation of the current detecting means of the circuit breaker according to one embodiment of the present invention.
【図 9 】 本発明の一実施例の回路遮断器の電流検出手段のバ ィ ァ ス制御動作を説明する波形図であ る。 FIG. 9 is a waveform diagram illustrating a bias control operation of the current detecting means of the circuit breaker according to one embodiment of the present invention.
【図 1 0 】 本発明の一実施例の回路遮断器の電流検出手段の バイ ァ ス制御動作を説明する波形図であ る。 FIG. 10 is a waveform diagram illustrating a bias control operation of the current detecting means of the circuit breaker according to one embodiment of the present invention.
【図 1 1 】 本発明の一実施例の回路遮断器の回路構成を示す ブロ ッ ク 図であ る。 FIG. 11 is a block diagram showing a circuit configuration of a circuit breaker according to one embodiment of the present invention.
【図 1 2 】 一般的な回路遮断器の限時特性を説明する特性図 であ る。 [Fig. 12] Fig. 12 is a characteristic diagram explaining the time limit characteristics of a general circuit breaker.
【図 1 3 】 本発明の一実施例の回路遮断器で M R 素子収納体 と 主回路導体の位置関係を示す主回路導体の通電方向 と 直交 方向の断面図である。 FIG. 13 is a cross-sectional view of the circuit breaker according to one embodiment of the present invention, showing a positional relationship between the MR element housing and the main circuit conductor, in a direction perpendicular to the direction of current flow of the main circuit conductor.
【図 1 4 】 本発明の一実施例の回路遮断器の M R 素子収納体 を負荷側導体上に載置 した状態を示す斜視図であ る。 FIG. 14 is a perspective view showing a state in which the MR element housing of the circuit breaker according to one embodiment of the present invention is mounted on a load-side conductor.
【図 1 5 】 本発明の一実施例の回路遮断器で M R 素子収納体 がケー ス に固着 された状態を示す主回路導体の通電方向 と 直 交方向の断面図であ る。 FIG. 15 is a cross-sectional view of the circuit breaker of one embodiment of the present invention, showing a state in which the MR element housing is fixed to the case, in a direction perpendicular to the direction of current flow of the main circuit conductor.
発明 を実施する ため の最良の形態 以下、 本発明の一実施例を図面を用 いて説明す る。 BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
図 1 に本実施例の回路遮断器の全体の構成を示す。 本実施 例は、 M R 素子 3 0 を用いた電流セ ンサ を主回路の導体に付 設 し、 M R素子 3 0 に よ っ て主回路の電流検出 を行な う も の であ る。 ケー ス 1 と カ ノく 一 2 力 ら な る筐体 3 の 、 ケー ス 1 内 にはその下方に電源側端子 4 か ら負荷側端子 6 に至る 通電導 体 1 0 が配設 さ れる。 通電導体 1 0 は電源側端子 4 がー端に 設け られた固定導体 1 1 、 固定導体 1 1 に接続さ れた可撓導 体 1 2 、 可撓導体 1 2 に接続 され ピン 1 4 に回動 自 在に軸支 された反発接点台 1 3 、 反発接点台 1 3 に設け られた反発接 点 1 5 、 反発接点 1 5 に対向 して設け られた可動接点 1 6 を 有 して開閉 自 在に設け られた可動接点台 1 7 、 可動接点台 1 7 に接続 された可撓導体 1 8 、 可撓導体 1 8 に接続 さ れて負 荷側端子 6 が設け られた負荷側導体 1 9 よ り な る。 反発接点 1 5 と 可動接点 1 6 の周囲には消弧装置 2 0 が配設 さ れる。 可動接点台 1 7 はその上方に配設 さ れた開閉機構 2 2 に よ り 操作 さ れて電路の開閉 を行 う 。 本実施例では反発接点 1 5 、 可動接点 1 6 お よ び開閉機構 2 2 が開閉手段 と して機能する , 開閉機構 2 2 はハ ン ドル 2 4 の手動操作に よ り 通常の O N · O F F 動作を行い、 過電流等に よ り 引外 し手段 と しての引外 し装置 2 6 が動作 した と き は 自 動的に電路を開 く T R I P 動 作を行 う 。 本実施例では過電流の検出は負荷側導体 1 9 に近 接 して設け られた M R 素子 3 0 と こ の M R 素子 3 0 に電気的 に接続 さ れた制御手段 と して の制御回路 4 0 に よ り 行 う 。 M R 素子 3 0 と 制御回路 4 0 の間は リ ー ド線 4 2 で接続 さ れる 制御回路 4 0 は基板上に組まれた電子回路であ り 、 アナ ロ グ 回路、 論理回路、 お よ びマ イ ク ロ コ ン ピ ュ ー タ 等に よ り 構成 さ れる。 制御回路 4 0 は M R素子に よ り 検出 さ れた電流が所 定の条件、 すなわち あ る 基準値を超えた と き 過電流 と 判断 し て 引外 しのた めの出力 を発生する。 FIG. 1 shows the overall configuration of the circuit breaker of this embodiment. In this embodiment, a current sensor using the MR element 30 is attached to a conductor of the main circuit, and the current of the main circuit is detected by the MR element 30. A current-carrying conductor 10 extending from the power supply terminal 4 to the load terminal 6 is provided below the case 1 in the case 3 which is a case 1 and a housing 3. The current-carrying conductor 10 is connected to the fixed conductor 11 provided with the power supply side terminal 4 at one end, the flexible conductor 12 connected to the fixed conductor 11, and the flexible conductor 12, and turned to the pin 14. It has a repulsion contact base 13 that is pivotally supported on its own, a repulsion contact point 15 provided on the repulsion contact base 13, and a movable contact 16 provided opposite to the repulsion contact 15. The movable contact block 17 provided, the flexible conductor 18 connected to the movable contact block 17, and the load-side conductor 19 connected to the flexible conductor 18 and provided with the load-side terminal 6. It depends. An arc extinguishing device 20 is provided around the repulsive contact 15 and the movable contact 16. The movable contact block 17 is operated by an opening / closing mechanism 22 disposed above it to open and close the electric circuit. In this embodiment, the repulsive contact 15, the movable contact 16, and the opening / closing mechanism 22 function as opening / closing means, and the opening / closing mechanism 22 is normally turned ON / OFF by manual operation of the handle 24. When the tripping device 26 as a tripping means operates due to overcurrent or the like, the tripping operation is performed by automatically opening the electric circuit. In this embodiment, the overcurrent is detected by electrically connecting the MR element 30 provided in close proximity to the load-side conductor 19 and the MR element 30. The control is performed by a control circuit 40 as control means connected to the control circuit. The MR element 30 and the control circuit 40 are connected by a lead wire 42. The control circuit 40 is an electronic circuit assembled on a board, and includes an analog circuit, a logic circuit, and It is composed of a micro computer and the like. The control circuit 40 determines that the current detected by the MR element exceeds a predetermined condition, that is, exceeds a certain reference value, is an overcurrent, and generates an output for tripping.
M R 素子 3 0 の負荷側導体 1 9 への取付状態を図 2 、 図 3 に よ り 説明する 。 M R素子 3 0 は負荷側導体 1 9 と の絶緣の ため、 絶縁物で形成 された M R 素子収納体 3 4 に格納 さ れ、 ネ ジ 3 2 に よ り 負荷側導体 1 9 に固着 さ れる。 M R 素子収納 体 3 4 力 ら は リ ー ド線 4 2 が引 き 出 さ れる。 The state of attachment of the MR element 30 to the load-side conductor 19 will be described with reference to FIGS. The MR element 30 is housed in an MR element housing 34 made of an insulating material to be insulated from the load-side conductor 19, and is fixed to the load-side conductor 19 by a screw 32. Lead wires 42 are drawn out from the MR element housing 34.
M R素子には半導体 M R素子 と 、 強磁性体 M R 素子の 2 種 類がある。 一般的に、 半導体 M R 素子は磁束密度の絶対値の 増加に伴い素子の抵抗が増加す る 特性を有 し 、 磁束密度が 1 テ ス ラ ( 1 0 、 0 0 0 ガ ウ ス) 以上ま で こ の特性が得 られる 抵抗値は任意に作 り 込みが可能であ り 、 た と えば数 k Ω の抵 抗値の も の を作る こ と も 可能であ る。 抵抗値の変化 も大き く た と えば 0 テス ラ で約 1 k Ω— 1 テ ス ラ で約 5 k Ω と 、 約 5 倍の変化をする も の も得 られる 。 一方、 強磁性体 M R素子は 磁束密度ゼ ロ で最大の抵抗値を有 し磁束の絶対値の増加 と と も に抵抗値は減少 し、 あ る磁束密度で抵抗値が飽和する 特性 を有 している。 こ の抵抗値の変化は初期値の数%程度であ り 、 ま た飽和する 磁束密度は数十ガ ウ ス (数 ミ リ テ ス ラ ) か ら数百ガ ウ ス (数 十 ミ リ テ ス ラ) と 小 さ く 、 セ ンサ と して利用でき る 範囲が半 導体 M R 素子に比べ、 非常に狭い も のであ る。 従 っ て、 半導 体 M R 素子を用い る と 、 強磁性体 M R 素子を用 いた場合に比 ベ、 高磁界ま で適用でき て主回路電流検出範囲を大き く する こ と ができ る。 There are two types of MR elements: semiconductor MR elements and ferromagnetic MR elements. Generally, a semiconductor MR element has a characteristic that the resistance of the element increases with an increase in the absolute value of the magnetic flux density, and the magnetic flux density is up to 1 Tesla (10,000 Gauss) or more. The resistance value that can obtain this characteristic can be arbitrarily created, for example, a resistance value of several kΩ can be created. The change in the resistance value is also large, for example, about 1 kΩ at 0 Tesla and about 5 kΩ at 1 Tesla, which is about 5 times the change. On the other hand, a ferromagnetic MR element has the characteristic that it has the maximum resistance value at zero magnetic flux density, decreases as the absolute value of magnetic flux increases, and saturates at a certain magnetic flux density. ing. The change in the resistance value is about several percent of the initial value, and the saturation magnetic flux density ranges from several tens of gauss (several milliliters) to several hundred gauss (several tens of milliliters). (Slurry), and the range that can be used as a sensor is much smaller than that of a semiconductor MR element. Therefore, when a semiconductor MR element is used, it can be applied up to a high magnetic field, and the main circuit current detection range can be enlarged, as compared with the case where a ferromagnetic MR element is used.
本実施例に用い られる M R素子 3 0 は半導体 M R 素子であ り 、 その特性は図 4 に示 される よ う に、 印加 さ れる磁束密度 に応 じて 、 素子抵抗が変化する も のであ る。 M R 素子 3 0 は 図 4 ( a ) に示すよ う に、 低磁束密度領域では低感度であ り 抵抗変化率が小 さ い為、 磁石に よ り バイ ア ス磁界を加え る こ と に よ り 、 図 4 ( b ) に示すよ う に動作点を シ フ ト させ、 高 感度の領域で使用する。 これは M R 素子に任意に調整可能な バイ ア ス磁界を印加する こ と に よ り 可能であ る。 The MR element 30 used in the present embodiment is a semiconductor MR element, and its characteristics are such that the element resistance changes in accordance with the applied magnetic flux density as shown in FIG. . As shown in Fig. 4 (a), the MR element 30 has a low sensitivity in the low magnetic flux density region and a small resistance change rate, so that the bias magnetic field is applied by a magnet. As shown in Fig. 4 (b), the operating point is shifted and used in the high sensitivity area. This is possible by applying an arbitrarily adjustable bias magnetic field to the MR element.
M R素子 3 0 はホール素子に比べ一般に感度が一桁大 き い の で磁気 リ ン グ等を用いな く て も小電流領域での主回路電流 の確実な検出ができ る。 M R素子 3 0 は電流セ ンサ と して用 いる場合に通電 さ れる 導体の近傍に配置する だけで済み、 ホ ール素子の場合に用い られる環状磁気 リ ングを用いな く て よ い。 そのため、 環状磁気 リ ングに導体を貫通 させ る 作業が不 要 と な り 、 組立時の作業性を向上 さ せる こ と ができ る。 ま た、 導体の近傍に M R 素子 3 0 を配置する だけで済むの で実装ス ベー ス を小 さ く する こ と ができ る。 Since the sensitivity of the MR element 30 is generally one order of magnitude higher than that of the Hall element, it is possible to reliably detect the main circuit current in a small current region without using a magnetic ring or the like. When the MR element 30 is used as a current sensor, it only needs to be arranged near the conductor to be energized, and the annular magnetic ring used in the case of the ball element need not be used. For this reason, the work of penetrating the conductor through the annular magnetic ring is not required, and the workability at the time of assembly can be improved. Also, since it is only necessary to dispose the MR element 30 near the conductor, the mounting The base can be reduced.
ま た 、 M R 素子 3 0 は図 5 ( a ) に示す よ う に外付抵抗 r と M R 素子 3 0 と で制御電圧 V c c を分圧する構成が基本的 に用い られ、 図 4 に示 し た特性に従い磁束密度に応 じて M R 素子の抵抗値 R 2が変化す る こ と に よ り 、 制御電圧 V c c の分 圧比率が変わる こ と を利用 して 、 その出力変化を検出信号 と して利用する も のであ る 。 In addition, as shown in FIG. 5 (a), the MR element 30 basically uses a configuration in which the control voltage Vcc is divided by the external resistor r and the MR element 30 as shown in FIG. 5 (a), and is shown in FIG. Using the fact that the resistance value R2 of the MR element changes according to the magnetic flux density according to the characteristics and the voltage dividing ratio of the control voltage Vcc changes, the output change is used as a detection signal. It is used.
しカゝ しなが ら一般に M R素子は、 温度特性が悪い。 つま り , 温度の変化に よ り 素子抵抗が大 き く 変わる為、 こ の対策 と し て図 5 ( b ) の よ う に 2 個の M R素子 3 0 、 3 0 a を用い、 片方の M R 素子 3 0 a を温度補償用 、 も う 一方の M R 素子 3 0 を磁束検出用 と して用 いる のが一般的であ る。 又、 図 6 の よ う にその出力 を差分の形で取 り 出す こ と も 多い。 However, the MR element generally has poor temperature characteristics. In other words, since the element resistance greatly changes due to the change in temperature, two MR elements 30 and 30a are used as a countermeasure as shown in Fig. 5 (b). Generally, the element 30a is used for temperature compensation, and the other MR element 30 is used for magnetic flux detection. Also, as shown in Fig. 6, the output is often extracted in the form of a difference.
しか しなが ら 、 電流セ ンサ用途 と してみた場合、 温度補償 を行な う 為には、 2 個の M R素子を接近 して配置する 一方で, 温度補償用 M R 素子側は、 理想的には磁界の影響を受けない よ う にする 必要があ り 、 配置方法及び磁束遮蔽方法の実現が 困難であ る。 本実施例では温度特性補償用 と して M R 素子を 対で用いる場合には双方の M R 素子に磁気バイ ァ ス を加 え、 検出すべき 磁界強度に応 じて磁気バイ ア ス強度を制御する。 これに よ り 一対の M R 素子を近接 した位置、 すなわち実質的 に同一位置への配置を可能 と する。 磁気バ イ ア ス強度の制御 は コ イ ルに よ っ て磁気バイ アス を印加 してその励磁電流を調 整する こ と に よ り 行 う 。 すなわち、 本実施例では、 温度補償 用 の M R 素子に も逆方向の磁気バ イ ア ス を印加する こ と に よ り 、 磁気検出用 と して の機能を持たせ、 同一位置への配置を 可能 と してい る。 However, in the case of current sensor applications, two MR elements are placed close to each other in order to perform temperature compensation, while the temperature compensation MR element side is ideal. Must be protected from the influence of the magnetic field, and it is difficult to realize the arrangement method and the magnetic flux shielding method. In this embodiment, when MR elements are used as a pair for temperature characteristic compensation, a magnetic bias is applied to both MR elements, and the magnetic bias strength is controlled according to the magnetic field strength to be detected. . This makes it possible to arrange a pair of MR elements at a close position, that is, at substantially the same position. To control the magnetic bias strength, a magnetic bias is applied by a coil to adjust the exciting current. It is done by adjusting. That is, in the present embodiment, by applying a magnetic bias in the opposite direction also to the MR element for temperature compensation, a function for magnetic detection is provided and the arrangement at the same position is performed. It is possible.
そ こ で、 本実施例では図 7 に示す よ う に、 温度補償用, 磁 束検出用の機能を双方の M R 素子に分担 さ せる 為、 互いに逆 バ イ ア ス を加 えた状態で配置す る よ う に構成 している。 動作 と しては、 図 8 に示すよ う に互レ、の M R 素子が逆 ァス さ れる こ と に よ り 、 動作点が対称位置にな る為、 検出磁束に よ り 抵抗値変化が互いに逆方向、 つま り 一方が増加すれば他方 は減少する こ と に な り 、 こ の こ と カゝ ら制御電源 V c c の分圧 比は検出磁束の増減に応 じて変化する こ と にな る。 Therefore, in this embodiment, as shown in FIG. 7, in order to share functions for temperature compensation and magnetic flux detection for both MR elements, they are arranged in a state in which reverse biases are applied to each other. It is configured so that As shown in Fig. 8, the operation of the MR elements is reversed, as shown in Fig. 8, so that the operating point is in a symmetrical position. In the opposite direction, that is, when one increases, the other decreases, and the voltage division ratio of the control power supply Vcc changes according to the increase and decrease of the detected magnetic flux. Become.
図 7 では M R素子へのバ イ ア ス印カ卩を コ ィ ノレ に よ り 与えて いる 力;、 も ち ろん磁石を用いて も よ い。 コ イ ルを利用する利 点は、 例えば図 9 の よ う に設定バ イ ア ス以上の検出磁束が印 加 さ れた場合、 抵抗値変化が逆転する領域が出て く る為、 検 出磁束の大き さ に よ っ て図 1 0 の よ う にその ァ ス 量を変 え る こ と が容易 にな る 点にあ る。 In Fig. 7, the force applied to the MR element by bias is applied to the MR element by a coil; of course, a magnet may be used. The advantage of using a coil is that, for example, when a detected magnetic flux that is equal to or greater than the set bias is applied as shown in Fig. 9, there is an area where the change in resistance value reverses. As shown in Fig. 10, it is easy to change the amount of the magnetic flux depending on the magnitude of the magnetic flux.
も ち ろんであ る が、 初期設定バ イ ア ス を大き く しておいて も 問題は無いが、 バ イ ア ス を磁石に よ り 与え る 場合は高価な も の と な り 、 又、 コ イ ル で与え る場合は、 低電流検出領域で も大き な制御電流を消費する こ と になる 為、 検出電流領域に 応 じてバ イ ア ス点を変え る のが都合が よ い。 図 1 1 は、 実施例におけ る 回路構成ブ ロ ッ ク 図であ り 、 電 路に流れる 電流を M R 素子に よ り 検出後、 A Z D 変換器を介 し て M P U に入力 し、 そ の入力信号を基に図 1 2 に示すよ う な回路遮断器の限時特性を制御す る構成 と してい る。 As a matter of course, there is no problem even if the initial setting bias is increased, but if the bias is given by a magnet, it becomes expensive, and If a coil is used, a large amount of control current will be consumed even in the low current detection region. Therefore, it is convenient to change the bias point according to the detection current region. Fig. 11 is a block diagram of the circuit configuration in the embodiment. After the current flowing in the circuit is detected by the MR element, the current is input to the MPU via the AZD converter, and the input is input to the MPU. Based on the signal, the time limit characteristic of the circuit breaker as shown in Fig. 12 is controlled.
3 相交流用の 3 極の回路遮断器に M R 素子を用 いる場合は 図 1 3 力ゝ ら 図 1 5 に示すよ う に各相の M R 素子 3 0 を三相分 一体に絶緣物で形成 された M R 素子収納体 3 6 に格納 して 、 ネ ジ 3 2 に よ り ケー ス 1 の底部に固着する。 図 1 4 は M R 素 子収納体 3 6 を負荷側導体 1 9 上に載置 した状態を示す。 M R 素子収納体 3 6 はそ の下部に位置決め用突部 3 6 a が形成 さ れ上部には制御回路 4 0 を載置する 突部 3 6 b が形成 され る 。 位置決め用突部 3 6 a は各極の負荷側導体 1 9 の間、 及 び両側の極の負荷側導体 1 9 と ケー ス 1 の內側面 と の問 に形 成 さ れる。 突部 3 6 b は制御回路 4 0 を載置 し 、 ね じ又は弾 性係合等に よ り 固着する のに必要な間隔で形成 さ れる。 図 1 3 は M R 素子収納体 3 6 の M R 素子を収納する部分を示す断 面図であ る。 M R 素子収納体 3 6 の内部には図 1 3 に示すよ う に負荷側導体 1 9 の上方で負荷側導体 1 9 に近接する よ う に M R素子 3 0 が絶縁物中 に埋設 さ れ、 ね じ 3 2 に よ り ケ一 ス 1 底部の導体間の絶縁隔壁上に固着 さ れる。 図 1 5 は M R 素子収納体 3 6 が ケー ス 1 に固着 さ れた状態を示す。 M R 素 子収納体 3 6 か ら は リ ー ド線 4 2 が上方に引 き 出 さ れ、 M R 素子収納体 3 6 の上に装着 された制御回路 4 0 に接続 される なお、 図 1 4 、 図 1 5 ではね じ 3 2 の図示を省略 してレ、 る。 本実施例では、 ホール素子に比べ一般的に感度が一桁大き な M R 素子を回路遮断器用の電流セ ンサ と し て使用 し て い る ので、 ホール素子を用いた場合に小電流領域での主回路電流 検出用 と して用い られていた磁気 リ ン グを廃止する こ と がで き 、 回路遮断器の小型化、 軽量化を図 る こ と ができ る。 When an MR element is used in a 3-pole circuit breaker for three-phase AC, as shown in Fig. 13 and Fig. 15, the MR element 30 for each phase is integrally formed of three phases. Then, it is stored in the MR element housing 36 and fixed to the bottom of the case 1 by screws 32. Figure 14 shows the MR element housing 36 placed on the load-side conductor 19. The MR element housing 36 has a positioning projection 36a formed at the lower portion thereof, and a projection 36b for mounting the control circuit 40 formed thereon at the upper portion thereof. The positioning projections 36a are formed between the load-side conductors 19 of each pole, and between the load-side conductors 19 of both poles and the side surface of the case 1. The protrusions 36b are formed at intervals necessary for mounting the control circuit 40 and fixing the control circuit 40 by screws or elastic engagement. FIG. 13 is a cross-sectional view showing a part of the MR element housing 36 that houses the MR element. As shown in Fig. 13, the MR element 30 is embedded in the insulator so that it is above the load-side conductor 19 and close to the load-side conductor 19, as shown in Fig. 13. It is fixed on the insulating partition between the conductors at the bottom of case 1 by screws 32. FIG. 15 shows a state in which the MR element housing 36 is fixed to the case 1. A lead wire 42 is drawn upward from the MR element housing 36 and connected to the control circuit 40 mounted on the MR element housing 36. In FIGS. 14 and 15, the illustration of the screw 32 is omitted. In the present embodiment, the MR element, which generally has an order of magnitude higher sensitivity than the Hall element, is used as a current sensor for a circuit breaker. The magnetic ring used for main circuit current detection can be eliminated, and the size and weight of the circuit breaker can be reduced.
ま た、 磁気 リ ン グは負荷側導体 1 9 を貫通 させる 必要が あ り 、 製造工程の複雑化、 製作工数の増加 と い う 問題があ る の に対 し 、 本実施例では M R素子収納体 3 4 ま たは 3 6 を負荷 側導体 1 9 上に装着する だけで電流検出セ ンサを取付する こ と ができ 、 製造工程の簡略化、 製作工数の低減を図 る こ と が でき る。 In addition, the magnetic ring needs to penetrate the load-side conductor 19, which complicates the manufacturing process and increases the number of manufacturing steps. The current detection sensor can be mounted simply by mounting the body 34 or 36 on the load-side conductor 19, which simplifies the manufacturing process and reduces the number of manufacturing steps. .
本実施例では M R 素子 3 0 に よ り 負荷側導体 1 9 の電流を 検出 してい る が、 電流を検出する位置は電源側の固定導体 1 1 であ っ て も よ い。 ま た、 本実施例では開閉手段 と して反発 接点 1 5 、 可動接点 1 6 およ び開閉機構 2 2 に よ り 構成 した 機械的な も の を用いてい る が、 サイ リ ス タ 等の電力開閉用の 半導体を用いた無接点の も のを用いて も よ い。 さ ら に、 本実 施例では過電流を検出 したが、 マ イ ク ロ コ ン ピ ュ ー タ に よ り 検出 さ れた各極の電流のべク ト ル和を演算 して地絡電流、 あ る いは漏電電流を検出する よ う 構成 して も よ い。 In the present embodiment, the current in the load-side conductor 19 is detected by the MR element 30. However, the position where the current is detected may be the fixed conductor 11 on the power supply side. Further, in this embodiment, as the opening / closing means, a mechanical one composed of a repulsive contact 15, a movable contact 16 and an opening / closing mechanism 22 is used, but a thyristor or the like is used. A non-contact type using a semiconductor for power switching may be used. In this embodiment, the overcurrent is detected, but the vector sum of the current of each pole detected by the microcomputer is calculated to calculate the ground fault current. Or, it may be configured to detect the leakage current.
産業上の利用可能性 Industrial applicability
本発明に よれば、 組立時の作業性に優れ、 しかも実装スべ ADVANTAGE OF THE INVENTION According to this invention, the workability | operativity at the time of assembly is excellent,
° 9 ' W ;? 2 ¾ ¾ ^ ¾ ¾ ¾回 $ 、レ — Z I ° 9 'W;? 2 ¾ ¾ ^ ¾ ¾ ¾
^8I0/S6df/X3d S "/ ΟΛ\ ^ 8I0 / S6df / X3d S "/ ΟΛ \
Claims
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP1995/001877 WO1997011475A1 (en) | 1995-09-20 | 1995-09-20 | Circuit breaker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP1995/001877 WO1997011475A1 (en) | 1995-09-20 | 1995-09-20 | Circuit breaker |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1997011475A1 true WO1997011475A1 (en) | 1997-03-27 |
Family
ID=14126281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP1995/001877 Ceased WO1997011475A1 (en) | 1995-09-20 | 1995-09-20 | Circuit breaker |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO1997011475A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2335318A (en) * | 1998-03-10 | 1999-09-15 | Gen Electric Co Plc | Circuit breaker with electronic trip unit and current sensor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63198876A (en) * | 1987-02-13 | 1988-08-17 | Tokin Corp | Current detector |
| JPH04120471A (en) * | 1990-09-10 | 1992-04-21 | Onuki Kenji | Signal detector |
| JPH052033A (en) * | 1990-11-15 | 1993-01-08 | Fujitsu Ltd | Current sensor and method of setting detection current range thereof |
| JPH06130088A (en) * | 1992-10-15 | 1994-05-13 | Fujitsu Ltd | Current sensor |
| JPH06187888A (en) * | 1992-12-21 | 1994-07-08 | Toshiba Corp | Circuit breaker |
| JPH0792199A (en) * | 1993-07-28 | 1995-04-07 | Matsushita Electric Ind Co Ltd | Current sensor |
-
1995
- 1995-09-20 WO PCT/JP1995/001877 patent/WO1997011475A1/en not_active Ceased
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63198876A (en) * | 1987-02-13 | 1988-08-17 | Tokin Corp | Current detector |
| JPH04120471A (en) * | 1990-09-10 | 1992-04-21 | Onuki Kenji | Signal detector |
| JPH052033A (en) * | 1990-11-15 | 1993-01-08 | Fujitsu Ltd | Current sensor and method of setting detection current range thereof |
| JPH06130088A (en) * | 1992-10-15 | 1994-05-13 | Fujitsu Ltd | Current sensor |
| JPH06187888A (en) * | 1992-12-21 | 1994-07-08 | Toshiba Corp | Circuit breaker |
| JPH0792199A (en) * | 1993-07-28 | 1995-04-07 | Matsushita Electric Ind Co Ltd | Current sensor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2335318A (en) * | 1998-03-10 | 1999-09-15 | Gen Electric Co Plc | Circuit breaker with electronic trip unit and current sensor |
| US6141197A (en) * | 1998-03-10 | 2000-10-31 | General Electric Company | Smart residential circuit breaker |
| GB2335318B (en) * | 1998-03-10 | 2002-09-18 | Gen Electric | Smart residential circuit breaker |
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