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WO1997006469B1 - Masque d'exposition lithographique provenant de precurseurs de nanocristaux, et procede de fabrication - Google Patents

Masque d'exposition lithographique provenant de precurseurs de nanocristaux, et procede de fabrication

Info

Publication number
WO1997006469B1
WO1997006469B1 PCT/US1996/012779 US9612779W WO9706469B1 WO 1997006469 B1 WO1997006469 B1 WO 1997006469B1 US 9612779 W US9612779 W US 9612779W WO 9706469 B1 WO9706469 B1 WO 9706469B1
Authority
WO
WIPO (PCT)
Prior art keywords
exposure mask
layer
substrate
nanocrystals
nanometers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1996/012779
Other languages
English (en)
Other versions
WO1997006469A1 (fr
Filing date
Publication date
Priority claimed from US08/512,167 external-priority patent/US5670279A/en
Application filed filed Critical
Priority to JP9508603A priority Critical patent/JPH11510651A/ja
Priority to EP96927322A priority patent/EP0843842A4/fr
Publication of WO1997006469A1 publication Critical patent/WO1997006469A1/fr
Publication of WO1997006469B1 publication Critical patent/WO1997006469B1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Abstract

La présente invention concerne un masque d'exposition à haute résolution convenant à la gravure aux rayons X ainsi qu'un procédé de fabrication de ce masque. Des nanocristaux de matières à forte densité d'électrons, de préférence sous la forme d'une solution colloïdale, sont appliqués à la surface d'un substrat à faible densité d'électrons de manière à former des détails d'une grande finesse, allant jusqu'à environ 10 nanomètres. L'abaissement des températures de fusion et de frittage associées aux nanocristaux, par comparaison avec la matière en vrac, permet de recourir à des conditions de traitement plus modérées. Il en résulte une réduction des contraintes interfaciales entre des couches dissemblables.
PCT/US1996/012779 1995-08-07 1996-08-06 Masque d'exposition lithographique provenant de precurseurs de nanocristaux, et procede de fabrication Ceased WO1997006469A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9508603A JPH11510651A (ja) 1995-08-07 1996-08-06 リソグラフィ露光マスク及びそのマスクの製造方法
EP96927322A EP0843842A4 (fr) 1995-08-07 1996-08-06 Masque d'exposition lithographique provenant de precurseurs de nanocristaux, et procede de fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/512,167 US5670279A (en) 1994-03-24 1995-08-07 Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
US08/512,167 1995-08-07

Publications (2)

Publication Number Publication Date
WO1997006469A1 WO1997006469A1 (fr) 1997-02-20
WO1997006469B1 true WO1997006469B1 (fr) 1997-04-03

Family

ID=24037968

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/012779 Ceased WO1997006469A1 (fr) 1995-08-07 1996-08-06 Masque d'exposition lithographique provenant de precurseurs de nanocristaux, et procede de fabrication

Country Status (4)

Country Link
US (1) US5670279A (fr)
EP (1) EP0843842A4 (fr)
JP (1) JPH11510651A (fr)
WO (1) WO1997006469A1 (fr)

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US6780765B2 (en) 1998-08-14 2004-08-24 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6277740B1 (en) * 1998-08-14 2001-08-21 Avery N. Goldstein Integrated circuit trenched features and method of producing same
US6139626A (en) * 1998-09-04 2000-10-31 Nec Research Institute, Inc. Three-dimensionally patterned materials and methods for manufacturing same using nanocrystals
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
AU2002224348A1 (en) * 2000-10-04 2002-04-15 The Board Of Trustees Of The University Of Arkansas Synthesis of colloidal nanocrystals
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US6794265B2 (en) * 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
US6710366B1 (en) 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US6819845B2 (en) 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US7005669B1 (en) 2001-08-02 2006-02-28 Ultradots, Inc. Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods
US6936181B2 (en) * 2001-10-11 2005-08-30 Kovio, Inc. Methods for patterning using liquid embossing
US7150910B2 (en) * 2001-11-16 2006-12-19 Massachusetts Institute Of Technology Nanocrystal structures
US6957608B1 (en) 2002-08-02 2005-10-25 Kovio, Inc. Contact print methods
US6887297B2 (en) * 2002-11-08 2005-05-03 Wayne State University Copper nanocrystals and methods of producing same
US6897151B2 (en) * 2002-11-08 2005-05-24 Wayne State University Methods of filling a feature on a substrate with copper nanocrystals
US7901656B2 (en) * 2003-03-21 2011-03-08 Wayne State University Metal oxide-containing nanoparticles
US20070178615A1 (en) * 2003-05-21 2007-08-02 Yissum Research Development Company Of The Hebrew University Of Jerusalem Semiconductor nanocrystal-based optical devices and method of preparing such devices
JP4309911B2 (ja) * 2006-06-08 2009-08-05 株式会社東芝 半導体装置およびその製造方法
US20100047722A1 (en) * 2008-08-25 2010-02-25 Seoul National University Research & Development Business Foundation (Snu R&Db Foundation) Three-dimensional nano material structures
US8837039B2 (en) * 2012-04-26 2014-09-16 Uchicago Argonne, Llc Multiscale light amplification structures for surface enhanced Raman spectroscopy
US9487869B2 (en) 2012-06-01 2016-11-08 Carnegie Mellon University Pattern transfer with self-assembled nanoparticle assemblies
US9356106B2 (en) * 2014-09-04 2016-05-31 Freescale Semiconductor, Inc. Method to form self-aligned high density nanocrystals

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US4534820A (en) * 1981-10-19 1985-08-13 Nippon Telegraph & Telephone Public Corporation Method for manufacturing crystalline film
US4515876A (en) * 1982-07-17 1985-05-07 Nippon Telegraph & Telephone Public Corp. X-Ray lithography mask and method for fabricating the same
SG43949A1 (en) * 1987-09-30 1997-11-14 Canon Kk X-ray mask support and process for preparation thereof
IL88837A (en) * 1988-12-30 1993-08-18 Technion Res & Dev Foundation Method for the preparation of mask for x-ray lithography
US5051326A (en) * 1989-05-26 1991-09-24 At&T Bell Laboratories X-Ray lithography mask and devices made therewith
US5262357A (en) * 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
US5318687A (en) * 1992-08-07 1994-06-07 International Business Machines Corporation Low stress electrodeposition of gold for X-ray mask fabrication
US5559057A (en) * 1994-03-24 1996-09-24 Starfire Electgronic Development & Marketing Ltd. Method for depositing and patterning thin films formed by fusing nanocrystalline precursors
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US5491114A (en) * 1994-03-24 1996-02-13 Starfire Electronic Development & Marketing, Ltd. Method of making large-area semiconductor thin films formed at low temperature using nanocrystal presursors

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