WO1993012582A1 - Dispositif logique programmable et procedes de fabrication - Google Patents
Dispositif logique programmable et procedes de fabrication Download PDFInfo
- Publication number
- WO1993012582A1 WO1993012582A1 PCT/US1992/010010 US9210010W WO9312582A1 WO 1993012582 A1 WO1993012582 A1 WO 1993012582A1 US 9210010 W US9210010 W US 9210010W WO 9312582 A1 WO9312582 A1 WO 9312582A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- connection points
- links
- gate array
- cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/1733—Controllable logic circuits
- H03K19/1735—Controllable logic circuits by wiring, e.g. uncommitted logic arrays
- H03K19/1736—Controllable logic circuits by wiring, e.g. uncommitted logic arrays in which the wiring can be modified
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/1733—Controllable logic circuits
- H03K19/1737—Controllable logic circuits using multiplexers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
- H10D84/903—Masterslice integrated circuits comprising field effect technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- EPROM programmable array logic
- PLD electrically programmable logic device
- FPGA field-programmable gate arrays
- a shorted interlayer connection point 1521 is created through energy-induced reactions between the barrier metal 1525 and the antifuse layer 1524.
- An alternative energy technique may be employed to create an opened intralayer connection point, for example, employing energy-induced cutting/removal processes.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Un dispositif programmable à circuits prédiffusés comprend une multiplicité de cellules (50 et 51) dont chacune comprend au moins un dispositif à semi-conducteurs (un transistor, par exemple) (M1-M4); une première multiplicité de liaisons ou de segments d'interconnexion reliant ensemble certains dispositifs choisis parmi les dispositifs à semi-conducteurs (C, D, E, F, G, H); une seconde multiplicité de liaisons ou de segments d'interconnexion (53, U, V, W, X, Y, Z), et une multiplicité de points de connexion reliant certaines liaisons choisies de la première multiplicité de liaisons, à certaines liaisons choisies de la seconde multiplicité de laiisons (L1-L26).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80753491A | 1991-12-13 | 1991-12-13 | |
| US07/807,534 | 1991-12-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO1993012582A1 true WO1993012582A1 (fr) | 1993-06-24 |
Family
ID=25196597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1992/010010 Ceased WO1993012582A1 (fr) | 1991-12-13 | 1992-11-19 | Dispositif logique programmable et procedes de fabrication |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO1993012582A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0681329A3 (fr) * | 1994-05-01 | 1996-11-13 | Quick Tech Ltd | Réseau logique personnalisable. |
| DE102014202116B4 (de) * | 2013-03-15 | 2017-03-09 | Globalfoundries Inc. | Verfahren zum Bilden eines Standardtransistorlayouts unter Verwendung von DSA-Vorstrukturen und einer Standardmetallschicht und Vorrichtung mit einem Standardtransistorlayout |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3987287A (en) * | 1974-12-30 | 1976-10-19 | International Business Machines Corporation | High density logic array |
| US4536949A (en) * | 1983-05-16 | 1985-08-27 | Fujitsu Limited | Method for fabricating an integrated circuit with multi-layer wiring having opening for fuse |
| US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
| US4847810A (en) * | 1986-04-22 | 1989-07-11 | Sharp Kabushiki Kaisha | Memory having redundancy circuit |
| US4968643A (en) * | 1986-08-12 | 1990-11-06 | Fujitsu Limited | Method for fabricating an activatable conducting link for metallic conductive wiring in a semiconductor device |
| US5081059A (en) * | 1988-06-16 | 1992-01-14 | Fujitsu Limited | Method of forming semiconductor integrated circuit using master slice approach |
| US5083181A (en) * | 1987-11-27 | 1992-01-21 | Hitachi, Ltd. | Semiconductor integrated circuit device and wiring method thereof |
| US5136356A (en) * | 1989-04-19 | 1992-08-04 | Seiko Epson Corporation | Semiconductor device |
-
1992
- 1992-11-19 WO PCT/US1992/010010 patent/WO1993012582A1/fr not_active Ceased
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3987287A (en) * | 1974-12-30 | 1976-10-19 | International Business Machines Corporation | High density logic array |
| US4536949A (en) * | 1983-05-16 | 1985-08-27 | Fujitsu Limited | Method for fabricating an integrated circuit with multi-layer wiring having opening for fuse |
| US4646266A (en) * | 1984-09-28 | 1987-02-24 | Energy Conversion Devices, Inc. | Programmable semiconductor structures and methods for using the same |
| US4847810A (en) * | 1986-04-22 | 1989-07-11 | Sharp Kabushiki Kaisha | Memory having redundancy circuit |
| US4968643A (en) * | 1986-08-12 | 1990-11-06 | Fujitsu Limited | Method for fabricating an activatable conducting link for metallic conductive wiring in a semiconductor device |
| US5083181A (en) * | 1987-11-27 | 1992-01-21 | Hitachi, Ltd. | Semiconductor integrated circuit device and wiring method thereof |
| US5081059A (en) * | 1988-06-16 | 1992-01-14 | Fujitsu Limited | Method of forming semiconductor integrated circuit using master slice approach |
| US5136356A (en) * | 1989-04-19 | 1992-08-04 | Seiko Epson Corporation | Semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0681329A3 (fr) * | 1994-05-01 | 1996-11-13 | Quick Tech Ltd | Réseau logique personnalisable. |
| US5861641A (en) * | 1994-05-01 | 1999-01-19 | Quick Technologies Ltd. | Customizable logic array device |
| DE102014202116B4 (de) * | 2013-03-15 | 2017-03-09 | Globalfoundries Inc. | Verfahren zum Bilden eines Standardtransistorlayouts unter Verwendung von DSA-Vorstrukturen und einer Standardmetallschicht und Vorrichtung mit einem Standardtransistorlayout |
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| DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
| 122 | Ep: pct application non-entry in european phase | ||
| NENP | Non-entry into the national phase |
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