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WO1992013369A1 - Bati de guide d'ondes coplanaire - Google Patents

Bati de guide d'ondes coplanaire Download PDF

Info

Publication number
WO1992013369A1
WO1992013369A1 PCT/GB1992/000073 GB9200073W WO9213369A1 WO 1992013369 A1 WO1992013369 A1 WO 1992013369A1 GB 9200073 W GB9200073 W GB 9200073W WO 9213369 A1 WO9213369 A1 WO 9213369A1
Authority
WO
WIPO (PCT)
Prior art keywords
strips
σoplanar
waveguide
σonstituted
earthing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB1992/000073
Other languages
English (en)
Inventor
Philip Lawson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Telecommunications PLC
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Publication of WO1992013369A1 publication Critical patent/WO1992013369A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • G02B6/4279—Radio frequency signal propagation aspects of the electrical connection, high frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies

Definitions

  • This invention relates to a ⁇ oplanar waveguide bridge, and to a laser module provided with a coplanar waveguide bridge interconnect.
  • a coplanar waveguide is constituted by a conducting strip positioned between two earth electrodes on the surface of a dielectric support member, the conducting strip and the earth electrodes being substantially ⁇ oplanar.
  • Coplanar waveguide is finding increased use in the design of microwave circuits, owing to its earth plane (earth electrodes) being positioned on top alongside its driven conductor (conductive strip).
  • This arrangement has advantages over microstrip (a dielectric support strip carrying a conductor on one side and an earth on the other) and stripline (a dielectric support strip -carrying a conductive strip sandwiched between two earthing strips) in many planar hybrid applications where surface mount components need to be earthed.
  • stripline a dielectric support strip -carrying a conductive strip sandwiched between two earthing strips
  • surface mount components can only be earthed directly by making holes in the support strip. Similar problems occur with stripline.
  • the physical structure and transmission properties of coplanar waveguide facilitates low loss interfacing to microstrip, stripline or co-axial line.
  • the present invention provides an assembly constituted by a laser module and an input/output transmission line, wherein the transmission line is a coplanar waveguide formed on a flexible softboard substrate, and wherein the coplanar waveguide provides stress relief and thermal insulation between its ends.
  • the laser module is constituted by a laser and a microstrip formed on a common substrate.
  • the coplanar waveguide is constituted by a single driven strip and a pair of earthing strips, these strips being substantially ⁇ oplanar.
  • the driven strip has a width of 0.77mm and each of the earthing strips is spaced from the driven strip by a distance of 0.14mm.
  • the flexible softboard substrate may be made of polytetrafluoroethylene, polystyrene or polyolefin (whether irradiated or not), and may contain glass, quartz or ceramic filler.
  • the invention also provides a ⁇ oplanar waveguide bridge constituted by a driven strip and a pair of earthing strips coplanar therewith, said strips being formed on a flexible softboard substrate, wherein the waveguide bridge provides stress relief and thermal insulation between its ends.
  • the invention further provides a ⁇ oplanar waveguide bridge ⁇ onstituted by a plurality of driven strips and a plurality of earthing strips ⁇ oplanar therewith, the strips being arranged so that ea ⁇ h driven strip is positioned between a pair of earthing strips, wherein the waveguide bridge provides stress relief and thermal insulation between its ends.
  • Figure 1 is a s ⁇ he ati ⁇ representation of the package
  • Figure 2 is a plan view of the package
  • Figure 3 is a side view of the package.
  • Figure 1 shows schemati ⁇ ally a laser pa ⁇ kage ⁇ onstituted by a high-speed laser module 1, a ⁇ oplanar waveguide bridge 2, and a ⁇ o-axial input 3.
  • the laser module 1 in ⁇ ludes a high-speed, multiple quantum well, Fabry Perot laser 4 and a mi ⁇ rostrip 5.
  • the laser 4 and the mi ⁇ rostrip 5 are provided on a ⁇ o mon substrate 6.
  • the substrate 6, whi ⁇ h is made of alumina, is mounted on a Peltier sta ⁇ k 7 (see Figure 3) whi ⁇ h is effe ⁇ tive to ⁇ ool the laser 4.
  • the substrate 6 may be made of beryllia, titania, quartz, sapphire, aluminium nitride or softboard material.
  • the mi ⁇ rostrip 5 has two tra ⁇ king portions 5a and 5b, these portions being bridged by a 43 ohm resistor 8.
  • the mi ⁇ rostrip tra ⁇ king portion 5a is ⁇ onne ⁇ ted (in a manner des ⁇ ribed below) to the ⁇ oplanar waveguide bridge 2, and the mi ⁇ rostrip portion 5b is ⁇ onne ⁇ ted to the laser 4 by a mesh link 9.
  • the resistor 8 is an impedan ⁇ e mat ⁇ hing resistor for mat ⁇ hing the impedan ⁇ e of the laser 4 to that if the input 3. Cladding on the underside of the substrate 6 forms a mi ⁇ rostrip earth plane 5 ⁇ .
  • the ⁇ oplanar waveguide bridge 2 is ⁇ onstituted by a 0.2mm thi ⁇ k flexible mi ⁇ rowave softboard substrate 2a, whi ⁇ h is made of glass mi ⁇ rofibre-rei nfor ⁇ ed polytetrafluoroethylene, a ⁇ opper driven strip 2b, and a pair of ⁇ opper earthing strips 2 ⁇ .
  • the strips 2b and 2 ⁇ are formed on the upper surfa ⁇ e of the substrate by any known tra ⁇ king deposition method su ⁇ h as ele ⁇ trodeposition, rolling or sputtering.
  • the driven strip 2b has a width of 0.77mm, and is spa ⁇ ed from ea ⁇ h of the earthing strips by a distan ⁇ e of 0.14mm.
  • the driven strip 2b is ⁇ onne ⁇ ted to the mi ⁇ rostrip tra ⁇ king portion 5a by means of a mesh link 10, and the earthing strips 2 ⁇ are ⁇ onne ⁇ ted to the earth plane 5 ⁇ by means of mesh links 11
  • the ⁇ o-axial input 3 is ⁇ onstituted by a ⁇ o-axial ⁇ onne ⁇ tor 13, the ⁇ entral ⁇ ondu ⁇ tor 13a of the ⁇ onne ⁇ tor being in ⁇ onta ⁇ t with the waveguiding strip 2b, and the outer earthing ⁇ ondu ⁇ tor 13b of the ⁇ onne ⁇ tor being in ⁇ onta ⁇ t with the earthing strips 2 ⁇ .
  • the bridge 2 not only forms a high ⁇ speed inter ⁇ onne ⁇ t, but also provides a path whi ⁇ h is both physi ⁇ ally flexible and is thermally insulating between its end points. If the top of the Peltier sta ⁇ k 7, whi ⁇ h is usually a thin ⁇ erami ⁇ plate, is conne ⁇ ted by a rigid link to the housing (not shown) of the pa ⁇ kage (this being typi ⁇ ally made - A -
  • the bridge 2 being made of a material su ⁇ h as polytetrafluoroethylene, is me ⁇ hani ⁇ ally flexible, and so over ⁇ omes the problem.
  • the Peltier sta ⁇ k 7 must pump out not only the heat dissipated by the laser and any bias, mat ⁇ hing or drive ⁇ omponents, but also heat arriving from outside down the inter ⁇ onne ⁇ t path.
  • the bridge 2 however, has a low thermal ⁇ ondu ⁇ tan ⁇ e, and so does not burden the Peltier sta ⁇ k 7 with any signifi ⁇ ant thermal load from outside.

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  • Lasers (AREA)

Abstract

Montage constitué d'un module laser ainsi que d'une ligne de transmission entrée/sortie (2). La ligne de transmission (2) est constitué d'un guide d'ondes coplanaire (2b, 2c) formé sur un substrat souple et tendre (2a).
PCT/GB1992/000073 1991-01-15 1992-01-14 Bati de guide d'ondes coplanaire Ceased WO1992013369A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB919100815A GB9100815D0 (en) 1991-01-15 1991-01-15 Coplanar waveguide ribbon
GB9100815.1 1991-01-15

Publications (1)

Publication Number Publication Date
WO1992013369A1 true WO1992013369A1 (fr) 1992-08-06

Family

ID=10688447

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1992/000073 Ceased WO1992013369A1 (fr) 1991-01-15 1992-01-14 Bati de guide d'ondes coplanaire

Country Status (2)

Country Link
GB (1) GB9100815D0 (fr)
WO (1) WO1992013369A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0600638A3 (en) * 1992-12-03 1994-08-24 Ail Systems Inc Method and apparatus for the interconnection of radio frequency (rf) monolithic microwave integrated circuits.
EP0730327A1 (fr) * 1995-03-01 1996-09-04 France Telecom Ensemble modulaire incluant deux circuits électroniques à relier électriquement pour la transmission d'un signal hyperfréquence
DE19641880A1 (de) * 1996-10-10 1998-04-16 Rosenberger Hochfrequenztech Meßspitzeneinheit zum Kontaktieren von planaren Mikrowellenschaltungen
EP0961372A1 (fr) * 1998-05-26 1999-12-01 Siemens Aktiengesellschaft Module laser à haute-fréquence et son procédé de fabrication
WO1999062150A3 (fr) * 1998-05-27 2000-01-13 Siemens Ag Ensemble boitier pour module laser
EP1301061A3 (fr) * 2001-09-28 2003-11-12 Agilent Technologies, Inc. - a Delaware corporation - Interconnection électrique flexible pour des émetteurs/récepteurs à fibre optique
CN109728391A (zh) * 2018-12-29 2019-05-07 中国科学院半导体研究所 基于缺陷地结构共面波导的激光器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4600907A (en) * 1985-03-07 1986-07-15 Tektronix, Inc. Coplanar microstrap waveguide interconnector and method of interconnection

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4600907A (en) * 1985-03-07 1986-07-15 Tektronix, Inc. Coplanar microstrap waveguide interconnector and method of interconnection

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
IEEE Gallium Arsenide Integrated Circuit Symposium-Technical Digest, San Diego, 22-25 October 1989, IEEE, (New York, US), K. ISHIDA et al.: "12 Gbps GaAs 2-bit multiplexer/demultiplexer chip set for the SONET STS-192 system", pages 317-320, see page 317, left-hand column, lines 1-11; page 318, lines 29-55; figure 4 *
IEEE Transactions on Microwave Theory and Techniques, vol. 37, no. 12, December 1989, (New York, US), F. ALESSANDRI et al.: "Theoretical and experimental characterization of nonsymmetrically shielded coplanar waveguides for millimeter-wave circuits", pages 2020-2027, see page 2023, left-hand column, lines 19-29; figure 1 *
IEEE Transactions on Microwave Theory and Techniques, vol. 38, no. 5, May 1990, (New York, US), J. SCHLAFER et al.: "Microwave packaging of optoelectronic components", pages 518-523, see page 518, right-hand column, line 8 - page 519, left-hand column, line 22; figure 1 *
Microwave Journal, vol. 19, no. 11, November 1976, (Dedham, US), D. RUBIN et al.: "Mm wave MICs use low value dielectric substrates", pages 35-39, see page 35, left-hand column, lines 15-25; page 35, right-hand column, lines 4-10 *
Microwave Journal, vol. 30, no. 6, June 1987, (Dedham, US), M. RIAZIAT et al.: "Coplanar waveguides for MMIC's", pages 125-131, see page 125, left-hand column, lines 1-4; page 130, right-hand column, lines 1-6; figures 1,3(a), 5 *
Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Minneapolis, 12-13 September 1988, IEEE, (New York, US), M.F. CAGGIANO: "Package design for a microwave laser driver", pages 158-161, see page 158, left-hand column, lines 9-36; page 159, right-hand column, lines 38-48; figures 1,4 *
Review of Scientific Instruments, vol. 55, no. 11, November 1984, (New York, US), P. SCHMID et al.: "Coplanar flip-chip mounting technique for picosecond devices", pages 1854-1858, see page 1855, left-hand column, line 20 - right-hand column, line 37; page 1857, right-hand column, lines 8-33; figures 1,2,6 *

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0845832A3 (fr) * 1992-12-03 1998-08-05 Ail Systems, Inc. Méthode et appareil pour l'interconnexion des circuits radiofréquences (RF) intégrés monolithiques à micro-ondes
US5517747A (en) * 1992-12-03 1996-05-21 Ail Systems, Inc. Method and apparatus for the interconnection of radio frequency (RF) monolithic microwave integrated circuits
EP0600638A3 (en) * 1992-12-03 1994-08-24 Ail Systems Inc Method and apparatus for the interconnection of radio frequency (rf) monolithic microwave integrated circuits.
US5808530A (en) * 1995-03-01 1998-09-15 France Telecom Modular assembly including two electronic circuits to be electrically interconnected to convey a microwave signal
FR2731308A1 (fr) * 1995-03-01 1996-09-06 France Telecom Ensemble modulaire incluant deux circuits electroniques a relier electriquement pour la transmission d'un signal hyperfrequence
EP0730327A1 (fr) * 1995-03-01 1996-09-04 France Telecom Ensemble modulaire incluant deux circuits électroniques à relier électriquement pour la transmission d'un signal hyperfréquence
DE19641880A1 (de) * 1996-10-10 1998-04-16 Rosenberger Hochfrequenztech Meßspitzeneinheit zum Kontaktieren von planaren Mikrowellenschaltungen
EP0961372A1 (fr) * 1998-05-26 1999-12-01 Siemens Aktiengesellschaft Module laser à haute-fréquence et son procédé de fabrication
WO1999062150A3 (fr) * 1998-05-27 2000-01-13 Siemens Ag Ensemble boitier pour module laser
US6422766B1 (en) 1998-05-27 2002-07-23 Siemens Aktiengesellschaft Ag Housing configuration for a laser module
EP1301061A3 (fr) * 2001-09-28 2003-11-12 Agilent Technologies, Inc. - a Delaware corporation - Interconnection électrique flexible pour des émetteurs/récepteurs à fibre optique
CN109728391A (zh) * 2018-12-29 2019-05-07 中国科学院半导体研究所 基于缺陷地结构共面波导的激光器
CN109728391B (zh) * 2018-12-29 2024-05-07 中国科学院半导体研究所 基于缺陷地结构共面波导的激光器

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