WO1991007010A3 - Amplificateur optique - Google Patents
Amplificateur optique Download PDFInfo
- Publication number
- WO1991007010A3 WO1991007010A3 PCT/US1990/006074 US9006074W WO9107010A3 WO 1991007010 A3 WO1991007010 A3 WO 1991007010A3 US 9006074 W US9006074 W US 9006074W WO 9107010 A3 WO9107010 A3 WO 9107010A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- waveguide
- section
- along
- gain section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/29—Repeaters
- H04B10/291—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form
- H04B10/2912—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing
- H04B10/2914—Repeaters in which processing or amplification is carried out without conversion of the main signal from optical form characterised by the medium used for amplification or processing using lumped semiconductor optical amplifiers [SOA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Un amplificateur optique (10) comprend un substrat (18) en matériau semiconducteur ayant une paire de surfaces opposées (20 et 22) et un corps en matériau semiconducteur (24) sur l'une des surfaces. Le corps comprend une paire de couches de revêtement (26 et 28) ayant des types de conductivité opposés et une région de puits quantique intermédiaire (30) entre les deux couches. Les couches de revêtement (26 et 28) et la région de puits quantique (30) forment un guide d'ondes (24) qui s'étend le long du corps. Une section de gain (12) se trouve dans le corps le long du guide d'ondes (240. La section de gain (12) est adaptée pour générer de la lumière dans la région active lorsqu'une tension y est appliquée. La section d'entrée de lumière (14) est adaptée pour diriger la lumière dans le corps et le long du guide d'ondes (24). Une section de sortie de lumière (16) ayant un réseau (42) s'étendant en travers du corps se trouve à l'autre extrémité de la section de gain (12). Les périodes des réseaux (42) sont telles qu'il ne se produit aucune auto-oscillation de lumière dans le guide d'ondes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US428,695 | 1989-10-30 | ||
| US07/428,695 US5019787A (en) | 1989-10-30 | 1989-10-30 | Optical amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO1991007010A2 WO1991007010A2 (fr) | 1991-05-16 |
| WO1991007010A3 true WO1991007010A3 (fr) | 1991-06-27 |
Family
ID=23699994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1990/006074 Ceased WO1991007010A2 (fr) | 1989-10-30 | 1990-10-26 | Amplificateur optique |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5019787A (fr) |
| WO (1) | WO1991007010A2 (fr) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2873856B2 (ja) * | 1990-04-03 | 1999-03-24 | キヤノン株式会社 | 光増幅器 |
| JP2539089B2 (ja) * | 1990-09-28 | 1996-10-02 | 株式会社東芝 | 半導体レ―ザ増幅器および半導体レ―ザ増幅装置 |
| JP3067880B2 (ja) * | 1991-01-12 | 2000-07-24 | キヤノン株式会社 | 回折格子を有する光検出装置 |
| US5175643A (en) * | 1991-09-30 | 1992-12-29 | Xerox Corporation | Monolithic integrated master oscillator power amplifier |
| US5282080A (en) * | 1991-12-09 | 1994-01-25 | Sdl, Inc. | Surface coupled optical amplifier |
| JP2830591B2 (ja) * | 1992-03-12 | 1998-12-02 | 日本電気株式会社 | 半導体光機能素子 |
| JP3155837B2 (ja) * | 1992-09-14 | 2001-04-16 | 株式会社東芝 | 光伝送装置 |
| US5703896A (en) * | 1995-06-07 | 1997-12-30 | The Regents Of The University Of Colorado | Silicon quantum dot laser |
| US5559822A (en) * | 1995-06-07 | 1996-09-24 | The Regents Of The University Of Colorado | Silicon quantum dot laser |
| FR2738068B1 (fr) * | 1995-08-24 | 1997-09-19 | Alcatel Nv | Amplificateur optique a faible diaphonie et composant incluant cet amplificateur |
| US20020176463A1 (en) * | 2001-03-22 | 2002-11-28 | Bullington Jeff A. | Low reflectivity grating |
| US20040114642A1 (en) * | 2002-03-22 | 2004-06-17 | Bullington Jeff A. | Laser diode with output fiber feedback |
| US7194016B2 (en) | 2002-03-22 | 2007-03-20 | The Research Foundation Of The University Of Central Florida | Laser-to-fiber coupling |
| US7489440B2 (en) | 2006-10-19 | 2009-02-10 | International Business Machines Corporation | Optical spectral filtering and dispersion compensation using semiconductor optical amplifiers |
| US20110247691A1 (en) * | 2008-10-24 | 2011-10-13 | The Regents Of The University Of California | Optical spectral concentrator, sensors and optical energy power systems |
| US9496684B2 (en) * | 2009-12-22 | 2016-11-15 | International Business Machines Corporation | System to control an optical signal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3887876A (en) * | 1972-10-03 | 1975-06-03 | Siemens Ag | Optical intermediate amplifier for a communication system |
| US4194162A (en) * | 1977-04-06 | 1980-03-18 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor device |
| US4881236A (en) * | 1988-04-22 | 1989-11-14 | University Of New Mexico | Wavelength-resonant surface-emitting semiconductor laser |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1053033A (fr) * | 1964-04-03 | |||
| NL7707720A (nl) * | 1977-07-12 | 1979-01-16 | Philips Nv | Halfgeleiderlaser of -versterker. |
| US4380074A (en) * | 1979-10-01 | 1983-04-12 | Walsh Peter J | Integrated circuit laser and electro-optical amplifier |
| US4794346A (en) * | 1984-11-21 | 1988-12-27 | Bell Communications Research, Inc. | Broadband semiconductor optical amplifier structure |
| GB8514051D0 (en) * | 1985-06-04 | 1985-07-10 | British Telecomm | Opto-electronic devices |
| US4942366A (en) * | 1989-03-21 | 1990-07-17 | General Electric Company | Amplifier device with coupled surface emitting grating |
-
1989
- 1989-10-30 US US07/428,695 patent/US5019787A/en not_active Expired - Fee Related
-
1990
- 1990-10-26 WO PCT/US1990/006074 patent/WO1991007010A2/fr not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3887876A (en) * | 1972-10-03 | 1975-06-03 | Siemens Ag | Optical intermediate amplifier for a communication system |
| US4194162A (en) * | 1977-04-06 | 1980-03-18 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor device |
| US4881236A (en) * | 1988-04-22 | 1989-11-14 | University Of New Mexico | Wavelength-resonant surface-emitting semiconductor laser |
Non-Patent Citations (3)
| Title |
|---|
| EVANS ET AL.: "Two-dimensional coherent... surface emission", IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 53, no. 23, June 1998 (1998-06-01), pages 2275 - 2277 * |
| HAMMER ET AL.: "Phase-locked operation... diode lasers", APPLIED PHYSICS LETTERS, vol. 50, no. 11, 16 March 1987 (1987-03-16), pages 659 - 661 * |
| Journal of Lightwave Technology, 09 September 1989, CARLSON et al., High Speed Switching... Diode Lasers, 12th Conference on Optical Fiber Communications. * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1991007010A2 (fr) | 1991-05-16 |
| US5019787A (en) | 1991-05-28 |
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