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WO1991007013A1 - Circuit protecteur pour transistor bipolaire a porte isolee - Google Patents

Circuit protecteur pour transistor bipolaire a porte isolee Download PDF

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Publication number
WO1991007013A1
WO1991007013A1 PCT/DE1989/000694 DE8900694W WO9107013A1 WO 1991007013 A1 WO1991007013 A1 WO 1991007013A1 DE 8900694 W DE8900694 W DE 8900694W WO 9107013 A1 WO9107013 A1 WO 9107013A1
Authority
WO
WIPO (PCT)
Prior art keywords
igbt transistor
circuit
gate
collector
overvoltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE1989/000694
Other languages
German (de)
English (en)
Inventor
Peter Zwanziger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to PCT/DE1989/000694 priority Critical patent/WO1991007013A1/fr
Publication of WO1991007013A1 publication Critical patent/WO1991007013A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches

Definitions

  • the invention relates to a protective circuit for an IGBT transistor with a load current monitoring circuit, a control element and a control stage, consisting of a potential-separating control converter and a first and second switching stage, which on the one hand via the control element from the load current monitoring circuit and on the other hand via the Control converters can be controlled by a control signal, as a result of which the gate of the IGBT transistor can in each case be connected via a resistor to a positive or negative voltage based on the emitter potential of the IGBT transistor.
  • IGBT transistors insulated-aipolar transistor
  • ABB Power Semiconductors which can be Switched Off, Technical Information at a Technical Press Conference on June 6, 1988 in Kunststoff.
  • Applications of IGBT transistor modules are described for example in the magazine “etz, Volume 110, 1989, Issue 10, pages 464 to 471 and pages 472 to 477".
  • a component-specific property of the IGBT transistors is the current drop time when switching off, which is almost independent of the collector current. If constant control conditions are assumed, when a fault current is switched off, which can assume n times the nominal collector current, the overvoltage at the parasitic inductance increases by n times the nominal collector-emitter overvoltage compared to operation under nominal conditions. This increased switch-off overvoltage can lead to failure of the IGBT transistor if a certain voltage value is exceeded (safe working area; RBSOA). Because commercially available
  • IGBT transistors are able to withstand high collector currents
  • a protective circuit which can be gathered from the preamble of claim 1 is known (European patent application No. 89116976.5; GR 88 P 3411 E) and commercially available.
  • This known protective circuit has a further switching stage, as a result of which the gate of the IGBT transistor can be connected to the negative voltage via a resistor.
  • the value of the second resistor also called the turn-off resistor, is chosen to be greater than the value of the first turn-off resistor, as a result of which the turn-off speed of the IGBT transistor is reduced in the event of an overload compared to the regular drop rate.
  • the circuit breaker is switched off by means of an increased tripping resistance in the case of rated operation and overload operation. Due to the larger value of this tripping resistance, the tripping loss power of the circuit breaker increases, as a result of which the efficiency of the device equipped with the circuit breaker deteriorates, but a critical time slot does not occur.
  • the invention is based on the object of improving the protective circuit of the type mentioned at the outset such that an overvoltage which arises as a result of switching off is limited without the aid of the control stage.
  • the gate of the IGBT transistor is connected to its collector by means of an active overvoltage limiter circuit, its Breakdown voltage value greater than an operational, maximum shutdown overvoltage value, but less than a maximum blocking capability of the IGBT transistor is selected.
  • a series circuit comprising a decoupling diode and at least one Zener diode can be provided as the overvoltage limiter circuit. It is thereby achieved that the collector-gate voltage is limited to a predetermined voltage value in the case of positive voltage values and is blocked for negative voltage values.
  • the active overvoltage limiter circuit By using the active overvoltage limiter circuit with a predetermined breakdown voltage value, the overvoltage generated by switching off the overcurrent or short-circuit current and the parasitic inductance is limited.
  • the Zener diodes are turned on and a current flows through the overvoltage limiter circuit and the gate resistor to the negative voltage.
  • the gate-emitter voltage specified as negative for switching off is raised until the IGBT transistor is driven into the active region. This process lasts until the energy stored in the parasitic inductance is reduced.
  • FIG 1 shows an embodiment of the invention
  • FIG. 1 shows a schematic basic circuit diagram of the protective circuit according to the invention.
  • An IGBT transistor 2 is connected on the collector side to a supply voltage + U-.
  • This IGBT transistor 2 and an IGBT transistor 3 form a bridge branch of a bridge circuit of a converter, the emitter E of the IGBT transistor 2 being connected to a collector of the second IGBT transistor 3 of the bridge branch.
  • the second IGBT transistor 3 of the bridge branch is shown without a protective circuit.
  • An intermediate circuit feeding the converter can also be provided as the supply voltage source + U-.
  • a load which is not shown for reasons of clarity, can be connected to the collector C of the IGBT transistor 3 or to the emitter E of the IGBT transistor 2.
  • a collector-emitter monitor 6 is connected to the collector C of the IGBT transistor 2 via a decoupling diode 4, its gate G is linked directly to a gate-emitter monitor 8.
  • the collector-emitter monitoring 6 and the gate-emitter monitoring 8 are connected to one another by means of an OR gate 10. These two monitors 6 and 8 and the OR gate 10 together form a structural unit 12, also called a load current monitoring circuit 12.
  • the IGBT transistor 2 can also be provided only with the collector-emitter monitoring 6 or with the gate-emitter monitoring 8, without it having an influence on the protective circuit according to the invention Has.
  • the gate G of the IGBT transistor 2 there is also a positive voltage + U V via a resistor R G0 and a switching stage 14 or a resistor Rp and a switching stage 16 a negative voltage -U v or zero voltage Volt can be switched on based on emitter potential.
  • the positive or negative voltage supply is activated by a potential-isolating converter 20 via the switching stages 14 and 16, which are effective for regular switching operation.
  • a digital-to-analog converter with potential isolation is provided for this.
  • a control signal with a line 22 from a speed control or a higher-level control is fed to this converter 20, the speed control or the higher-level control not being shown for reasons of clarity.
  • the switching stages 14 and 16 are linked to a control element 24.
  • the output signal of the 0DER gate 10 of the load current monitoring circuit 12 is fed to this control element 24.
  • the IGBT transistor 2 were provided either only with the collector-emitter monitoring 6 or only with the gate-emitter monitoring 8, the output of the monitoring 6 or 8 would be directly with the Input of the control element 24 linked.
  • the control element 24 is designed, for example, as a logic switching device, so that in the event of an overload or in the event of a short circuit, the switching stage 14 is blocked and the switching stage 16 is released.
  • the zero potential of this control element 24 is the emitter potential of the IGBT transistor 2.
  • the gate G of the IGBT transistor 2 is linked to the collector C of the IGBT transistor 2 by means of an overvoltage limiter circuit 26.
  • the overvoltage limiter circuit 26 consists of a series connection of a decoupling diode 28 and at least one Z diode 30.
  • the decoupling diode 28 is connected on the cathode side to the gate G and the Z diode 30 on the cathode side to the collector C of the IGBT transistor 2.
  • the value of the breakdown voltage U. can be determined by the number of Z diodes 30 and by the selection of Z diodes 30. be predetermined.
  • the parasitic inductance of the circuit arrangement is shown as inductance L j j-.
  • the collector-gate voltage is limited to a predetermined voltage value for positive voltage values and blocked for negative voltage values.
  • the Z diode 30 or Z diodes become conductive, a current flows via the overvoltage limiter circuit and the gate resistor R ⁇ - to the negative voltage source -LA.
  • the gate-emitter voltage which is negatively predetermined for switching off, is raised until the IGBT transistor 2 is controlled in the active region.
  • the energy stored in the parasitic inductance L 1 can flow off via the IGBT transistor 2.
  • the control stage consisting of the control converter 20 and a first and second resistive current path R GQ , 14, R p ,, 16, can be dimensioned such that the efficiency of the switch 2 and thus the converter is largest, although the overvoltage that occurs is automatically limited.

Landscapes

  • Power Conversion In General (AREA)

Abstract

L'invention se rapporte à un circuit protecteur pour un transistor bipolaire à porte isolée (2) avec un circuit de surveillance des charges de courant (12), un organe de commande (24) et un étage d'amorçage, constitué d'un transformateur d'amorçage à rupture de potentiel (20) et d'une première ainsi que d'une deuxième voie de courant amorçables (RGO, 14; RGI, 16) amorcés d'une part par le circuit de surveillance des charges de courant (12), par l'intermédiaire de l'organe de commande (24), et d'autre part par un signal de commande, par l'intermédiaire du transformateur d'amorçage, la porte (G) du transistor (2) pouvant être reliée par une résistance (RGO, RGI) à une tension positive ou négative (+UV ou -UV) par rapport au potentiel émetteur du transistor (2). Dans l'invention, la porte (G) du transistor (2) est reliée par l'intermédiaire d'un circuit actif de limitation des surtensions (26) à son collecteur (C), dont la tension disruptive (UAÜ) est choisie de manière qu'elle soit supérieure à une surtension de rupture maximum en service (UAÜn), mais inférieure à un pouvoir d'arrêt maximum (USS) du transistor (2). On obtient ainsi un circuit protecteur pour un transistor (2) avec un amorçage optimal et une limitation automatique des surtensions.
PCT/DE1989/000694 1989-10-31 1989-10-31 Circuit protecteur pour transistor bipolaire a porte isolee Ceased WO1991007013A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/DE1989/000694 WO1991007013A1 (fr) 1989-10-31 1989-10-31 Circuit protecteur pour transistor bipolaire a porte isolee

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE1989/000694 WO1991007013A1 (fr) 1989-10-31 1989-10-31 Circuit protecteur pour transistor bipolaire a porte isolee

Publications (1)

Publication Number Publication Date
WO1991007013A1 true WO1991007013A1 (fr) 1991-05-16

Family

ID=6835283

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1989/000694 Ceased WO1991007013A1 (fr) 1989-10-31 1989-10-31 Circuit protecteur pour transistor bipolaire a porte isolee

Country Status (1)

Country Link
WO (1) WO1991007013A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005027442A1 (de) * 2005-06-14 2006-12-28 Siemens Ag Schaltungsanordnung zum Schalten einer Last
CN103036214A (zh) * 2011-09-29 2013-04-10 台达电子企业管理（上海）有限公司 一种功率开关串联电路及其控制方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0206505A1 (fr) * 1985-05-15 1986-12-30 Kabushiki Kaisha Toshiba Circuit de protection contre des courants de surcharge pour MOSFET avec variation de conductibilité
GB2185357A (en) * 1986-01-13 1987-07-15 Telemecanique Electrique Gto thyristor switch
EP0268930A1 (fr) * 1986-11-11 1988-06-01 Siemens Aktiengesellschaft Montage avec un commutateur de puissance autoprotégé

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0206505A1 (fr) * 1985-05-15 1986-12-30 Kabushiki Kaisha Toshiba Circuit de protection contre des courants de surcharge pour MOSFET avec variation de conductibilité
GB2185357A (en) * 1986-01-13 1987-07-15 Telemecanique Electrique Gto thyristor switch
EP0268930A1 (fr) * 1986-11-11 1988-06-01 Siemens Aktiengesellschaft Montage avec un commutateur de puissance autoprotégé

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Electrical Design News, Band 28, Nr. 20, 29. September 1983, (Boston, Massachusetts, US), B.J. BALIGA et al.: "Modulated-Conductivity Devices Reduce Switching Losses", seiten 153-162 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005027442A1 (de) * 2005-06-14 2006-12-28 Siemens Ag Schaltungsanordnung zum Schalten einer Last
DE102005027442B4 (de) * 2005-06-14 2008-10-30 Continental Automotive Gmbh Schaltungsanordnung zum Schalten einer Last
CN103036214A (zh) * 2011-09-29 2013-04-10 台达电子企业管理（上海）有限公司 一种功率开关串联电路及其控制方法
US8837183B2 (en) 2011-09-29 2014-09-16 Delta Electronics (Shanghai) Co., Ltd. Power switch series circuit and control method thereof
CN103036214B (zh) * 2011-09-29 2015-07-08 台达电子企业管理（上海）有限公司 一种功率开关串联电路及其控制方法

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