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WO1989007367A3 - Convertisseur analogique-numerique fabrique selon une technologie a faisceau ionique focalise - Google Patents

Convertisseur analogique-numerique fabrique selon une technologie a faisceau ionique focalise Download PDF

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Publication number
WO1989007367A3
WO1989007367A3 PCT/US1988/004693 US8804693W WO8907367A3 WO 1989007367 A3 WO1989007367 A3 WO 1989007367A3 US 8804693 W US8804693 W US 8804693W WO 8907367 A3 WO8907367 A3 WO 8907367A3
Authority
WO
WIPO (PCT)
Prior art keywords
analog
digital converter
ion beam
focused ion
beam technology
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1988/004693
Other languages
English (en)
Other versions
WO1989007367A2 (fr
Inventor
Lawrence E Larson
Joseph F Jensen
Robert H Walden
Adele E Schmitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Priority to DE8989901438T priority Critical patent/DE3878559T2/de
Publication of WO1989007367A2 publication Critical patent/WO1989007367A2/fr
Publication of WO1989007367A3 publication Critical patent/WO1989007367A3/fr
Priority to KR8971861A priority patent/KR920006252B1/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • H03M1/36—Analogue value compared with reference values simultaneously only, i.e. parallel type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/34—Analogue value compared with reference values
    • H03M1/36—Analogue value compared with reference values simultaneously only, i.e. parallel type
    • H03M1/361—Analogue value compared with reference values simultaneously only, i.e. parallel type having a separate comparator and reference value for each quantisation level, i.e. full flash converter type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6708—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing the kink effect or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Analogue/Digital Conversion (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

Le convertisseur analogique/numérique décrit (10) utilise une série de comparateurs (12, 14, 16 et 18), dont chacun comporte au moins un onduleur composé d'une paire de transistors de type MOS complémentaire formée par un transistor à canal P (22) et par un transistor à canal N (24). Les niveaux seuil des transistors (22, 24) sont modifiés au moyen de techniques d'implantation par faisceau ionique focalisé, de façon à conférer aux comparateurs des niveaux de transition à accroissement monotonique.
PCT/US1988/004693 1988-02-08 1988-12-23 Convertisseur analogique-numerique fabrique selon une technologie a faisceau ionique focalise Ceased WO1989007367A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE8989901438T DE3878559T2 (de) 1988-02-08 1988-12-23 Analog/digital-umwandler, hergestellt nach der ionenstrahltechnologie.
KR8971861A KR920006252B1 (en) 1988-02-08 1989-10-10 Analog-to-digital converter made with focused ion beam technology

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/153,750 US4872010A (en) 1988-02-08 1988-02-08 Analog-to-digital converter made with focused ion beam technology
US153,750 1988-02-08

Publications (2)

Publication Number Publication Date
WO1989007367A2 WO1989007367A2 (fr) 1989-08-10
WO1989007367A3 true WO1989007367A3 (fr) 1989-10-05

Family

ID=22548585

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1988/004693 Ceased WO1989007367A2 (fr) 1988-02-08 1988-12-23 Convertisseur analogique-numerique fabrique selon une technologie a faisceau ionique focalise

Country Status (6)

Country Link
US (1) US4872010A (fr)
EP (1) EP0353271B1 (fr)
JP (1) JPH02503255A (fr)
KR (1) KR920006252B1 (fr)
DE (1) DE3878559T2 (fr)
WO (1) WO1989007367A2 (fr)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237326A (en) * 1989-02-02 1993-08-17 Samsung Electronics Co., Ltd. Flash type analog-to-digital converter having MOS comparators
JPH04127467A (ja) * 1990-06-04 1992-04-28 Mitsubishi Electric Corp 半導体集積回路装置
US5030952A (en) * 1990-12-26 1991-07-09 Motorola, Inc. Sigma-delta type analog to digital converter with trimmed output and feedback
US5327131A (en) * 1991-11-07 1994-07-05 Kawasaki Steel Corporation Parallel A/D converter having comparator threshold voltages defined by MOS transistor geometries
FR2694449B1 (fr) * 1992-07-09 1994-10-28 France Telecom Composant électronique multifonctions, notamment élément à résistance dynamique négative, et procédé de fabrication correspondant.
US5863823A (en) * 1993-07-12 1999-01-26 Peregrine Semiconductor Corporation Self-aligned edge control in silicon on insulator
US5930638A (en) * 1993-07-12 1999-07-27 Peregrine Semiconductor Corp. Method of making a low parasitic resistor on ultrathin silicon on insulator
US5572040A (en) * 1993-07-12 1996-11-05 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
US5864162A (en) * 1993-07-12 1999-01-26 Peregrine Seimconductor Corporation Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
US5416043A (en) * 1993-07-12 1995-05-16 Peregrine Semiconductor Corporation Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer
US5602551A (en) * 1993-10-06 1997-02-11 Nippondenso Co., Ltd. Analog-to-digital converter with silicon-on-insulator structure
US5581100A (en) * 1994-08-30 1996-12-03 International Rectifier Corporation Trench depletion MOSFET
JPH08125152A (ja) 1994-10-28 1996-05-17 Canon Inc 半導体装置、それを用いた相関演算装置、ａｄ変換器、ｄａ変換器、信号処理システム
JPH09129864A (ja) 1995-10-30 1997-05-16 Canon Inc 半導体装置及びそれを用いた半導体回路、相関演算装置、信号処理システム
EP0977265A1 (fr) * 1998-07-30 2000-02-02 STMicroelectronics S.r.l. Structure de circuit comprenant un transistor parasite à tension de seuil très haute
WO2000049719A1 (fr) * 1999-02-19 2000-08-24 The Penn State Research Foundation Circuit ramifie quantificateur de tension
JP4736313B2 (ja) * 2002-09-10 2011-07-27 日本電気株式会社 薄膜半導体装置
US6972702B1 (en) 2004-06-15 2005-12-06 Hrl Laboratories, Llc 1-Of-N A/D converter
US7256657B2 (en) * 2005-10-14 2007-08-14 Freescale Semiconductor, Inc. Voltage controlled oscillator having digitally controlled phase adjustment and method therefor
US7279997B2 (en) 2005-10-14 2007-10-09 Freescale Semiconductor, Inc. Voltage controlled oscillator with a multiple gate transistor and method therefor
US7215268B1 (en) * 2005-10-14 2007-05-08 Freescale Semiconductor, Inc. Signal converters with multiple gate devices
US7773010B2 (en) * 2006-01-31 2010-08-10 Imec A/D converter comprising a voltage comparator device
KR20080075737A (ko) 2007-02-13 2008-08-19 삼성전자주식회사 스위치드 커패시터 회로를 이용한 아날로그 디지털 변환방법 및 장치
EP2263318B1 (fr) * 2008-03-19 2013-06-19 Integrated Device Technology, Inc. Convertisseur flash analogique/numérique

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2021346A (en) * 1978-05-11 1979-11-28 Philips Nv Threshold circuit
US4420743A (en) * 1980-02-11 1983-12-13 Rca Corporation Voltage comparator using unequal gate width FET's

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2021346A (en) * 1978-05-11 1979-11-28 Philips Nv Threshold circuit
US4420743A (en) * 1980-02-11 1983-12-13 Rca Corporation Voltage comparator using unequal gate width FET's

Also Published As

Publication number Publication date
KR920006252B1 (en) 1992-08-01
WO1989007367A2 (fr) 1989-08-10
KR900701098A (ko) 1990-08-17
EP0353271A1 (fr) 1990-02-07
JPH02503255A (ja) 1990-10-04
EP0353271B1 (fr) 1993-02-17
DE3878559D1 (de) 1993-03-25
US4872010A (en) 1989-10-03
DE3878559T2 (de) 1993-06-03

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