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WO1989000754A1 - Process for manufacturing a material having predetermined dielectric, pyroelectric and/or magnetic properties and its use - Google Patents

Process for manufacturing a material having predetermined dielectric, pyroelectric and/or magnetic properties and its use Download PDF

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Publication number
WO1989000754A1
WO1989000754A1 PCT/EP1988/000609 EP8800609W WO8900754A1 WO 1989000754 A1 WO1989000754 A1 WO 1989000754A1 EP 8800609 W EP8800609 W EP 8800609W WO 8900754 A1 WO8900754 A1 WO 8900754A1
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Prior art keywords
material produced
predetermined
dimensions
radar
circuits
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German (de)
French (fr)
Inventor
Peter Marquardt
Günter NIMTZ
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Licentia Patent Verwaltungs GmbH
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Licentia Patent Verwaltungs GmbH
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F41—WEAPONS
    • F41H—ARMOUR; ARMOURED TURRETS; ARMOURED OR ARMED VEHICLES; MEANS OF ATTACK OR DEFENCE, e.g. CAMOUFLAGE, IN GENERAL
    • F41H3/00—Camouflage, i.e. means or methods for concealment or disguise
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/0045—Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use
    • H01F1/0063—Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use in a non-magnetic matrix, e.g. granular solids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10N15/15—Thermoelectric active materials

Definitions

  • the invention relates to a method for materials according to the preambles of claims 1 and 2 and their use.
  • the invention is based on knowledge about the electrical conductivity of mutually insulated, electrically conductive particles, for example indium crystals, with diameters in the order of 1 nm to 1000 nm, which are in a non-conductive or diamagnetic material; this conductivity decreases rapidly with decreasing diameter approximately proportional to its third power, as shown in FIG. 1 for indium at a temperature of approximately 300 K., where x is the diameter and ⁇ is the electrical conductivity. Note the double logarithmic scale and the area of the experimental measurements designated "experiment".
  • the object of the invention is to make these phenomena technically usable in the production of materials with certain dielectric and / or magnetic properties that are desired in a wide range.
  • claims 1 and 2 specify the measures for preselecting predetermined dielectric, pyroelectric and magnetic properties in the production of materials separately from one another. While the subclaims deal with exemplary uses of these materials, although there are other uses of the same.
  • Mesoscopic here means a range of dimensions between macroscopic and microscopic, ie approximately between 1 nm and 1000 nm.
  • the result is a heterogeneous medium in the form of an indium colloid with, for example, 0.5% by volume of the metal components.
  • This can be increased to a filling factor f of approximately 0.20 to approximately 0.35 by subsequent centrifugation at approximately 70,000 times the acceleration due to gravity. If the colloids are heated, the particles start to aggregate, which leads to particle sizes of several 100 nm depending on the heating temperature and the heating time. Deep-melting materials are particularly suitable for this.
  • the particle growth can be arbitrarily interrupted by subsequent cooling and continued by reheating the samples in the sense of FIG. 2.
  • Other suitable systems are e.g. B. metal or semiconductor particles in a ceramic or plastic matrix (Trägermat.erial).
  • FIG. 3 shows the X-ray intensity J ⁇ k (in arbitrary units) as a function of the deflection vector k for an indium colloid with a fill factor of approximately 0.25, namely on the one hand square measuring points (curve A) in front of the Heating and on the other hand curve B after heating. If a sample with less indium than in (3) is used, curve C (triangular measuring points) results
  • FIG. 4 serves to explain the conductivity measurement of mesoscopic metal particles.
  • a microwave method is used for this.
  • the complex dielectric function and thus the electrical conductivity is obtained from the microwave absorption and the phase shift of a multilayer test specimen (sandwich).
  • the oscillation time of the used microwave measurement frequency of 10 GHz is 10 - 10 s and is therefore more than four orders of magnitude greater than a typical relaxation time of a metal at room temperature, whereby the measured microwave conductivity also approximately applies to direct current.
  • the effective conductivity of the entire heterostructure is measured taking into account the dielectric data of the pure oil matrix.
  • this method can also be used to measure components in other insulating matrices, for example water in oil in the form of a microeraulsion, indium in oil in colloidal form or platinum in ceramic.
  • FIG. 4 means ( ) the effective complex dielectric function of the metal particles in oil that is filled in Teflon washers.
  • This Teflon has a dielectric function ( ⁇ T ).
  • the size of the particles it is possible to specify any value of their conductivity that lies between that of insulators and metal, for example in the production of microwave absorbers.
  • the method according to the invention can also be used advantageously for materials that use resistors or other line components (capacitors, Transformers) in VLSI circuits and integrated microwave circuits.
  • the material produced according to the invention can optionally be selected according to the desired absorption factor, reflection factor and frequency range. This can be used in the directional antenna technology in many applications with great advantage an antenna cover, for. B. build a radome of a radar antenna, which is transparent for the operating wavelength, but not for enemy radiation incident in the military.
  • a radar camouflage is possible with the material produced by the method according to the invention in such a way that quasi total absorption takes place, but this can result in "hole formation" in large surroundings in an environment with radar reflecting properties, which makes the camouflage illusory.
  • it is more expedient to achieve certain radar echo structures for example to simulate a reflection image of the surrounding space or to consciously produce radar targets.
  • components such as, for. B. capacitors and resistors in a small space.
  • the invention can advantageously be used for components for beam guidance and beam filtering, such as, for example, because of the selectable dielectric properties.
  • FIG. 5 have uncooled pyroelectric IR detectors according to the prior art at low signal frequencies f a high detectivity D *, which, however, is disadvantageous
  • the frequency drop of D * can advantageously be shifted towards higher frequencies (dashed curve).

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Manufacturing & Machinery (AREA)
  • Molecular Biology (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Aerials With Secondary Devices (AREA)
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Abstract

In a process for manufacturing a material having predetermined dielectric, pyroelectric and/or magnetic properties use is made of the fact that the electrical properties of mesoscopic particles (approximately 1 nm to 100 nm), for example of metallic or semiconductor materials incorporated in a support matrix, such as ceramics or plastics, vary in function of the particle size. The material so obtained is used in particular to manufacture electrotechnical components, in particular for use in high-frequency and microelectronics applications.

Description

Beschreibung description

Verfahren, zum Herstellen eines bezüglich seiner dielektrisehen, pyroelektrischen und/oder magnetischen Eigenschaften vorgebbaren Materials und dessen VerwendungMethod for producing a material which can be predetermined with regard to its dielectric, pyroelectric and / or magnetic properties and its use

Die Erfindung betrifft ein Verfahren, für Materialien gemäß den Oberbegriffen der Patentansprüche 1 und 2 sowie deren Verwendung.The invention relates to a method for materials according to the preambles of claims 1 and 2 and their use.

Diese Verwendung ist im elektromagnetischen Bereich und auch anderweitig, beispielsweise bei der Temperaturmessung, vielfach mit Vorteil gegenüber dem Stand der Technik gegeben. Die Erfindung basiert auf Erkenntnissen über die elektrische Leitfähigkeit gegeneinander isolierter, elektrisch leitfähiger Partikel, beispielsweise von Indiumkristallen, mit Durchmessern in der Größenordnung von 1 nm bis zu 1000 nm, die sich in einem nichtleitenden oder diamagnetischen Material befinden; diese Leitfähigkeit nimmt rapide mit abnehmendem Durchmesser ungefähr proportional zu dessen dritter Potenz ab, wie es in FIG. 1 für Indium bei einer Temperatur von etwa 300 K. dargestellt ist, wobei x der Durchmesser und δ die elektrische Leitfähigkeit bedeuten. Man beachte den doppelt-logarithmischen Maßstab und den mit "experiment" bezeichneten Bereich der Versuchsmessungen. Zum Vergleich sind die nach bisherigen Methoden meßbaren Werte für makroskopische Leitfähigkeit (classical) und die Leitfähigkeit des Partikel-Materials (bulk) dargestellt. Die Messungen erfolgten bei etwa 10 GHz; im Grundsatz ist dieser Effekt aber von nahezu Gleichstrom bis zu höchsten Frequenzen im IR-Bereich mit gleicher Tendenz vorhanden.This use in the electromagnetic field and also elsewhere, for example in temperature measurement, is often advantageous compared to the prior art. The invention is based on knowledge about the electrical conductivity of mutually insulated, electrically conductive particles, for example indium crystals, with diameters in the order of 1 nm to 1000 nm, which are in a non-conductive or diamagnetic material; this conductivity decreases rapidly with decreasing diameter approximately proportional to its third power, as shown in FIG. 1 for indium at a temperature of approximately 300 K., where x is the diameter and δ is the electrical conductivity. Note the double logarithmic scale and the area of the experimental measurements designated "experiment". For comparison, the values for macroscopic conductivity (classical) and the conductivity of the particle material (bulk) that can be measured by previous methods are shown. The measurements were made at around 10 GHz; in principle, however, this effect is present from almost direct current to the highest frequencies in the IR range with the same tendency.

Der Erfindung liegt die Aufgabe zugrunde, diese Erscheinungen gezielt technisch nutzbar zu machen bei der Herstellung von Materialien mit bestimmten, in weitem Bereich gewünschten dielektrischen und/oder magnetischen Eigenschaften.The object of the invention is to make these phenomena technically usable in the production of materials with certain dielectric and / or magnetic properties that are desired in a wide range.

Die Ansprüche 1 und 2 geben aus Formulierungsgründen getrennt voneinander die Maßnahmen zur Vorwahl vorgegebener dielektrischer, pyroelektrischer bzw. magnetischer Eigenschäften bei der Materialherstellung an. während die Unteransprüche sich mit beispielhaften Verwendungen dieser Materialien befassen, obwohl es noch weitere Verwendbarkeiten derselben gibt. Unter mesoskopisch wird hierbei ein Abmessungsbereich zwischen makroskopisch und mikroskopisch verstanden, d. h. ungefähr zwischen 1 nm und 1000 nm. Beim Nachweis der Materialeigenschaften erfindungsgemäß hergestellter Materialien benutzt man vorteilhaft diejenige Methode, die beispielsweise Indiumpartikel mit Durchmessern von 20 nm in Öl, beispielsweise einen Ölfilm, dadurch ein- bringt, indem diese Partikel direkt im Hochvakuum in das Öl gedampft werden. Hierbei rotiert das 01 um den Verdampfer. Es ergibt sich ein heterogenes Medium in Form eines Indiumkolloids mit beispielsweise 0,5 Vol.% der Metallkomponete. Diese kann auf einen Füllfaktor f von etwa 0,20 bis etwa 0,35 durch anschließende Zentrifugation gesteigert werden bei etwa 70000-facher Erdbeschleunigung. Heizt man die Kolloide, so setzt ein Zusammenballen der Partikel ein, was zu Partikelgrößen von mehreren 100 nm führt in Abhängigkeit von der Erhitzungstemperatur und der Heizdauer. Hierzu eignen sich besonders gut tiefschmelzende Materialien. DieFor formulation reasons, claims 1 and 2 specify the measures for preselecting predetermined dielectric, pyroelectric and magnetic properties in the production of materials separately from one another. while the subclaims deal with exemplary uses of these materials, although there are other uses of the same. Mesoscopic here means a range of dimensions between macroscopic and microscopic, ie approximately between 1 nm and 1000 nm. When detecting the material properties of materials produced according to the invention, use is advantageously made of the method which, for example, introduces indium particles with a diameter of 20 nm into oil, for example an oil film, by evaporating these particles directly into the oil in a high vacuum. The 01 rotates around the evaporator. The result is a heterogeneous medium in the form of an indium colloid with, for example, 0.5% by volume of the metal components. This can be increased to a filling factor f of approximately 0.20 to approximately 0.35 by subsequent centrifugation at approximately 70,000 times the acceleration due to gravity. If the colloids are heated, the particles start to aggregate, which leads to particle sizes of several 100 nm depending on the heating temperature and the heating time. Deep-melting materials are particularly suitable for this. The

Ballung erfolgt in der Nähe des Schmelzpunktes der Partikel. Unter f = 0,2 gibt es keine dramatischen Ballungen. Das Partikelwachstum kann willkürlich unterbrochen werden durch anschließendes Abkühlen und fortgesetzt werden durch Wiedererhitzen der Proben im Sinne der FIG. 2. Andere geeignete Svsteme sind z. B. Metall- oder Halbleiterteilchen in einer Keramik- oder Kunststoffmatrix (Trägermat.erial).Agglomeration occurs near the melting point of the particles. There is no dramatic concentration below f = 0.2. The particle growth can be arbitrarily interrupted by subsequent cooling and continued by reheating the samples in the sense of FIG. 2. Other suitable systems are e.g. B. metal or semiconductor particles in a ceramic or plastic matrix (Trägermat.erial).

Die Partikelgrößen und ihre Verteilungen lassen sich durch bekannte Verfahren, wie z. B. durch Elektronenmikroskopie und mittels Röntgenstrahlen (X-Ray Scattering) ermitteln. FIG. 3 zeigt die Röntgenstrahlintensität J · k ( in willkürlichen Einheiten) in Abhängigkeit von dem Ablenkvektor k für ein Indiumkolloid bei einem Füllfaktor von etwa 0,25, und zwar einerseits quadratische Meßpunkte (Kurve A) vor dem Heizen und andererseits Kurve B nach dem Heizen. Bei Verwendung einer Probe mit weniger Indium als in (3) ergibt sich Kurve C (dreieckige MeßpunkteThe particle sizes and their distributions can be by known methods such. B. by electron microscopy and using X-rays (X-ray scattering). FIG. 3 shows the X-ray intensity J · k (in arbitrary units) as a function of the deflection vector k for an indium colloid with a fill factor of approximately 0.25, namely on the one hand square measuring points (curve A) in front of the Heating and on the other hand curve B after heating. If a sample with less indium than in (3) is used, curve C (triangular measuring points) results

FIG. 4 dient der Erläuterung der Leitfähigkeitsmessung mesoskopischer Metallpartikel. Hierzu wird eine Mikrowellenmethode angewendet. Die komplexe dielektrische Funktion und damit die elektrische Leitfähigkeit wird aus der Mikrowellenabsorption und der Phasenverschiebung eines mehrschichtförmigen Probekörpers (sandwich) gewonnen. Die Oszillationszeit der benutzten Mikroweilenmeßfrequenz von 10 GHz beträgt 10- 10 s und ist damit mehr als vier Größenordnungen größer als eine typische Relaxationszeit eines Metalls bei Raumtemperatur, wodurch die gemessene Mikrowellenleitfähigkeit näherungsweise auch für Gleichstrom gilt. Dabei wird die effektive Leitfähigkeit der gesamten Heterostruktur gemessen unter Berücksichtigung der dielektrischen Daten der reinen Olmatrix. Beispielsweise kann man mit dieser Methode auch Komponenten in anderen isolierenden Matrizen messen, beispielsweise Wasser in Öl in Form einer Mikroeraulsion, Indium in Öl in kolloidaler Form oder Platin in Keramik.FIG. 4 serves to explain the conductivity measurement of mesoscopic metal particles. A microwave method is used for this. The complex dielectric function and thus the electrical conductivity is obtained from the microwave absorption and the phase shift of a multilayer test specimen (sandwich). The oscillation time of the used microwave measurement frequency of 10 GHz is 10 - 10 s and is therefore more than four orders of magnitude greater than a typical relaxation time of a metal at room temperature, whereby the measured microwave conductivity also approximately applies to direct current. The effective conductivity of the entire heterostructure is measured taking into account the dielectric data of the pure oil matrix. For example, this method can also be used to measure components in other insulating matrices, for example water in oil in the form of a microeraulsion, indium in oil in colloidal form or platinum in ceramic.

In FIG. 4 bedeutet (

Figure imgf000006_0001
) die effektive komplexe Dielektrizitätsfunktion der Metallpartikel in Öl, das in Teflonscheiben eingefüllt ist. Dieses Teflon hat eine Dielektrizitätsfunktion (εT) .In FIG. 4 means (
Figure imgf000006_0001
) the effective complex dielectric function of the metal particles in oil that is filled in Teflon washers. This Teflon has a dielectric function (ε T ).

Zusammenfassend ist festzuhalten, daß mesoskopische Teilchen der vorbesprochenen Art je nach Größe eine Leitfähigkeit entsprechend σ ~ x3 oder σ = konst. aufweisen. Dieses Verhalten bringt gravierende Konsequenzen für z . B . die Materialtechnologie, die moderne Mikroelektronik sowie die IR-Detektortechnologie.In summary, it should be noted that mesoscopic particles of the type discussed above have a conductivity corresponding to σ ~ x 3 or σ = const. This Behavior has serious consequences for e.g. B. material technology, modern microelectronics and IR detector technology.

Beispielsweise kann man durch Wahl der Größe der Partikel jeden Wert ihrer Leitfähigkeit vorgeben, der zwischen denjenigem von Isolatoren und Metall liegt, beispielsweise bei der Herstellung von Mikrowellenabsorbern Gleichfalls kann das erfindungsgemäße Verfahren mit Vorteil für Materialien benutzt werden, die Widerstände oder andere Leitungsbauelemente (Kondensatoren, Transformatoren) in VLSI-Schaltungen und Integrierten Mikrowellenschaltungen realisieren sollen.For example, by selecting the size of the particles, it is possible to specify any value of their conductivity that lies between that of insulators and metal, for example in the production of microwave absorbers. The method according to the invention can also be used advantageously for materials that use resistors or other line components (capacitors, Transformers) in VLSI circuits and integrated microwave circuits.

Das erfindungsgemäß hergestellte Material kann wahlweise nach gewünschtem Absorptionsfaktor, Reflexionsfaktor und Frequenzbereich gewählt werden. Damit läßt sich in der Richtantennentechnik in vielen Anwendungs fällen mit großem Vorteil eine Antennenabdeckung, z . B. ein Radom einer Radarantenne, aufbauen, welche zwar für die Betriebswellenlänge transparent ist, nicht aber für im militärischen Bereich gegnerische einfallende Strahlung.The material produced according to the invention can optionally be selected according to the desired absorption factor, reflection factor and frequency range. This can be used in the directional antenna technology in many applications with great advantage an antenna cover, for. B. build a radome of a radar antenna, which is transparent for the operating wavelength, but not for enemy radiation incident in the military.

Eine Radartarnung ist mit dem nach dem erfindungs gemäßen Verfahren hergestellten Material derart möglich, daß quasi Totalabsorption erfolgt, was bei großen Zielobjekten allerdings in einer Umgebung mit radarreflektierenden Eigenschaften eine "Lochbildung" zur Folge haben kann, die die Tarnung illusorisch macht. In solchen Fällen ist es zweckmäßiger, bestimmte Radarechostrukturen zu erzielen, beispielsweise ein Reflexionsbild des Umgebungsraumes vorzutäuschen oder bewußt Radarscheinziele herzustellen. Unter Ausnutzung der effektiven dielektrischen Eigenschaften des nach dem erfindungsgemäßen Verfahren hergestellten Materials lassen sich in der Mikroelektronik vorteilhaft Bauelemente, wie z. B. Kondensatoren und Widerstände, auf kleinstem Raum realisieren.A radar camouflage is possible with the material produced by the method according to the invention in such a way that quasi total absorption takes place, but this can result in "hole formation" in large surroundings in an environment with radar reflecting properties, which makes the camouflage illusory. In such cases, it is more expedient to achieve certain radar echo structures, for example to simulate a reflection image of the surrounding space or to consciously produce radar targets. Using the effective dielectric properties of the material produced by the method according to the invention, components such as, for. B. capacitors and resistors in a small space.

Im Mikrowellen- und Millimeterwellenbereich sind weitere Leitungsbauelemente, z. B. Transformatoren und Resonatoren, realisierbar, die an die spezifischen räumlichen Forderungen dieser Schaltung angepaßt werden können.In the microwave and millimeter wave range, further line components, e.g. B. transformers and resonators can be realized, which can be adapted to the specific spatial requirements of this circuit.

Im quasi-optischen und optischen Bereich läßt sich die Erfindung wegen der wählbaren dielektrischen Eigenschaften vorteilhaft für Bauelemente zur Strahlführung und Strahlfilterung einsetzen, wie z. B. bei Linsen und Wellenleitern (Lichtleitfaser).In the quasi-optical and optical field, the invention can advantageously be used for components for beam guidance and beam filtering, such as, for example, because of the selectable dielectric properties. B. with lenses and waveguides (optical fiber).

Gemäß FIG. 5 weisen ungekuhlte pyroelektrische IR-Detektoren nach dem Stand der Technik bei niedrigen Signalfrequenzen f eine hohe Detektivität D* auf, die jedoch in nachteiligerAccording to FIG. 5 have uncooled pyroelectric IR detectors according to the prior art at low signal frequencies f a high detectivity D *, which, however, is disadvantageous

Weise bei höheren Signalfrequenzen f (größer ungefähr 10 Hz) stark abfällt (ausgezogene Kurve). Dieser. Abfall von D* oberhalb 10 Hz wird durch die dielektrische Relaxation (RC-Zeit) bestimmt.Way at higher signal frequencies f (greater than approximately 10 Hz) drops sharply (solid curve). This. D * drop above 10 Hz is determined by the dielectric relaxation (RC time).

Werden nun in eine derartige pyroelektrische Substanz die mesoskopischen Teilchen eingebracht, so kann der Frequenzabfall von D* in vorteilhafter Weise zu höheren Frequenzen hin verschoben werden (gestrichelte Kurve). If the mesoscopic particles are now introduced into such a pyroelectric substance, the frequency drop of D * can advantageously be shifted towards higher frequencies (dashed curve).

Claims

Patentansprüche Claims 1. Verfahren zum Herstellen eines bezüglich seiner dielektrischen oder pyroelektrischen Eigenschaften vorgebbaren Materials, dadurch gekennzeichnet, daß in ein elektrisch nichtleitendes Trägermaterial, beispielsweise in einen Feststoff, wie Keramik, Kunststoffe oder in eine Flüssigkeit, wie Öl, sogenannte mesoskopische Partikel vorgegebener Abmessungen aus im makroskopischen Kompaktzustand elektrisch leitfähigen Materialien (z. B. Metalle, Halbleiter) nach Maßgabe eines vorgebbaren Füllfaktors eingebracht werden.1. A method for producing a predetermined with respect to its dielectric or pyroelectric properties, characterized in that in an electrically non-conductive carrier material, for example in a solid, such as ceramics, plastics or in a liquid, such as oil, so-called mesoscopic particles of predetermined dimensions from the macroscopic Compact state of electrically conductive materials (e.g. metals, semiconductors) can be introduced in accordance with a predeterminable fill factor. 2. Verfahren zum Herstellen eines bezüglich seiner magnetischen Eigenschaften vorgebbaren Materials, dadurch gekennzeichnet, daß entweder in ein diamagnetisches Trägermaterial, beispielsweise in ein Edelmetall oder in eine supra- leitende Substanz, sogenannte mesoskopische Partikel vorge gebener Abmessungen aus im makroskopischen Kompaktzustand elektrisch leitfähigen Materialien (z. B. Metalle, Halbleiter) oder daß in ein ferro- und/oder paramagnetisches Trägermaterial (z. B. Metalle, Halbleiter) sogenannte mesoskopische Partikel vorgebbarer Abmessungen aus im makroskopischen Kompaktzustand diamagnetischen Materialien, wie z. B. Edelmetalle, nach Maßgabe eines vσrgebbaren Füllfakτors eingebracht werden.2. A process for producing a material which can be predetermined with regard to its magnetic properties, characterized in that either a diamagnetic carrier material, for example a noble metal or a superconducting substance, so-called mesoscopic particles given dimensions from materials which are electrically conductive in the macroscopic compact state (e.g. metals, semiconductors) or that so-called mesoscopic particles of predeterminable dimensions from materials which are diamagnetic in the macroscopic compact state into a ferro- and / or paramagnetic carrier material, such as B. precious metals, according to a vσrgebbaren Füllfakτors are introduced. 3. Verwendung des nach dem Verfahren gemäß Anspruch 1 oder 2 hergestellten Materials in einem Absorber für elektromagnetische Wellen, dadurch gekennzeichnet, daß die Partikelabmessungen nach einem vorgegebenen Gradienten und/oder der Füllfaktor nach Maßgabe eines gewünschten Absorptions- bzw. Reflexionsfaktors gewählt sind.3. Use of the material produced by the method according to claim 1 or 2 in an absorber for electromagnetic waves, characterized in that the particle dimensions are selected according to a predetermined gradient and / or the filling factor in accordance with a desired absorption or reflection factor. 4. Verwendung des nach dem Verfahren gemäß Anspruch 1 oder 2 hergestellten Materials in einem Absorber für elektromagnetische Wellen, dadurch gekennzeichnet, daß die Partikelabmessungen nach einem vorgegebenen Gradienten und/oder4. Use of the material produced by the method according to claim 1 or 2 in an absorber for electromagnetic waves, characterized in that the particle dimensions according to a predetermined gradient and / or Füllfaktor nach Maßgabe eines gewünschten Frequenzbereichs gewählt sind.Fill factor are selected in accordance with a desired frequency range. 5. Verwendung nach Anspruch 3 oder 4 des nach dem Verfahren gemäß Anspruch 1 oder 2 hergestellten Materials für eine5. Use according to claim 3 or 4 of the material produced by the method according to claim 1 or 2 for a Antennenabdeckung, z. B. für ein Radom einer Radarantenne.Antenna cover, e.g. B. for a radome of a radar antenna. 6. Verwendung nach Anspruch 3 oder 4 des nach dem Verfahren gemäß Anspruch 1 oder 2 hergestellten Materials zur Radartarnung. 6. Use according to claim 3 or 4 of the material produced by the method according to claim 1 or 2 for radar camouflage. 7. Verwendung nach Anspruch 3 oder 4 des nach dem Verfahren gemäß Anspruch 1 oder 2 hergestellten Materials zum Vortäuschen von elektromagnetischen Absorptions- bzw. Reflexionsstrukturen vorgegebenen Musters bei der Radartarnung bzw. Radar-Scheinzielherstellung.7. Use according to claim 3 or 4 of the material produced by the method according to claim 1 or 2 for simulating electromagnetic absorption or reflection structures predetermined pattern in the radar camouflage or radar-dummy target production. 8. Verwendung des nach dem Verfahren gemäß Anspruch 1 oder 2 hergestellten Materials für elektronische Leitungsbauelemente, wie z . B. Kondensatoren, Widerstände, Transformatoren.8. Use of the material produced by the method according to claim 1 or 2 for electronic line components, such as. B. capacitors, resistors, transformers. 9. Verwendung nach Anspruch 8 in Verbindung mit klassischen Wellenleitern, wie z. B. Streifenleiter. Hohlleiter, Koaxialleiter, Schlitzleiter, Mikrowellenschaltkreise (micro wave integrated circuits MIC).9. Use according to claim 8 in connection with classic waveguides, such as. B. stripline. Waveguides, coaxial conductors, slot conductors, microwave circuits (micro wave integrated circuits MIC). 10. Verwendung des nach dem Verfahren gemäß Anspruch 1 oder 2 hergestellten Materials für elektronische Bauelemente und/oder Funktionen in integrierten Schaltkreisen zur Realisierung von z . B. Kondensatoren und Widerständen auf kleinstem Raum, wie z. B. bei VLSI-Schaltkreisen und monolithischen Mikrowellen-/Millimeterwellensehaltkreisen.10. Use of the material produced by the method according to claim 1 or 2 for electronic components and / or functions in integrated circuits for realizing z. B. capacitors and resistors in the smallest space, such as. B. VLSI circuits and monolithic microwave / millimeter wave circuits. 11. Verwendung des nach dem Verfahren gemäß Anspruch 1 oder 2 hergestellten Materials im optischen und quasioptischen11. Use of the material produced by the method according to claim 1 or 2 in optical and quasi-optical Bereich zur Wellenführung und Filterung. Area for wave guidance and filtering.
PCT/EP1988/000609 1987-07-14 1988-07-08 Process for manufacturing a material having predetermined dielectric, pyroelectric and/or magnetic properties and its use Ceased WO1989000754A1 (en)

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DE3723258 1987-07-14
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DE3802150A DE3802150A1 (en) 1987-07-14 1988-01-26 METHOD FOR PRODUCING A MATERIAL PRESERVABLE IN ITS DIELECTRICAL, PYROELECTRIC AND / OR MAGNETIC PROPERTIES, AND THE USE THEREOF

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DE3802150C2 (en) 1992-04-09
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JPH02500869A (en) 1990-03-22

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