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WO1987006862A1 - Procede et dispositif de nettoyage par ultrasons - Google Patents

Procede et dispositif de nettoyage par ultrasons Download PDF

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Publication number
WO1987006862A1
WO1987006862A1 PCT/US1987/001083 US8701083W WO8706862A1 WO 1987006862 A1 WO1987006862 A1 WO 1987006862A1 US 8701083 W US8701083 W US 8701083W WO 8706862 A1 WO8706862 A1 WO 8706862A1
Authority
WO
WIPO (PCT)
Prior art keywords
transducer
bath
wafer
workpiece
past
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US1987/001083
Other languages
English (en)
Inventor
Charles Reid White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of WO1987006862A1 publication Critical patent/WO1987006862A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H10P72/0416—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
    • B08B2203/002—Details of cleaning machines or methods involving the use or presence of liquid or steam the liquid being a degassed liquid

Definitions

  • the present invention is directed to an improved method and apparatus for cleaning the surface of an article with ultrasonic energy and more particularly for cleaning the surfaces of patterned and unpatterned semiconductor wafers in preparation for subsequent operations in the manufacture of semiconductor devices.
  • the present invention provides an ultrasonic bath in which it is possible to generate sufficient power to thoroughly clean the wafer surface without the problems of overheating or damaging the wafer or the tranducer horn, without mechanically damaging the wafer surface or the circuitry deposited thereon, and without the problems of recontamination of the surface by 5 particles propelled into the bath liquid.
  • a method and apparatus for cleaning a workpiece, such as a semiconductor wafer, in a liquid bath including
  • 1.0 means for performing the steps of disposing the workpiece on a support at a first position in the bath whereby at least one surface of the workpiece is exposed.
  • Means is provided for supplying the bath, with a liquid medium such as ultrapure water
  • Means is provided for energizing the transducer with an electrical source of energy at a frequency in the range of about 20kHz to 90kHz to generate ultrasonic
  • Means is also provided for moving the liquid medium past the transducer and the workpiece in the same direction as the transducer moves with respect to the workpiece.
  • a method and apparatus for cleaning semiconductor wafers in a liquid bath wherein the semiconductor wafer is disposed on a support at a first position in the bath with at
  • the bath is provided with a supply of ultrapure water (and possibly other chemicals) and an electroacoustic transducer is disposed in the bath at a second position with the radiating surface thereof disposed at an angle of about 10° to the surface of the wafer and facing the first position.
  • Means is provided for energizing the transducer with a source of energy providing about 100 watts per square inch of radiating surface of the transducer at a frequency of about 20kHz to generate ultrasonic energy which is emitted as a compact, well-defined area of intense cavitation in the bath.
  • the wafer is moved in a first direction from the first position past the transducer with the exposed surface facing the radiating surface of the transducer at a distance of about 3/8 of an inch and within the area of intense cavitation.
  • Means is provided for moving the ultrapure water with non-turbulent flow past the transducer and the wafer in a direction opposite to the movement of the wafer past the transducer.
  • FIG. 1 is a cross-sectional view of apparatus for carrying out the method of ultrasonic cleaning of articles in accordance with the present invention
  • FIG. 2 is a perspective view, partially in section, of the cleaning apparatus.
  • FIG. 3 is a cross-sectional view of an alternative embodiment of the present invention.
  • apparatus for cleaning semiconductor wafers comprising a generally open topped tank 10 arranged to contain a liquid bath having a liquid level 12, a liquid inlet 14 and a liquid outlet 16 at opposite ends thereof.
  • An ultrasonic transducer 18 having a radiating surface 34 is disposed within the bath, substantially midway between the inlet and the outlet.
  • the electroacoustic transducer imparts an ultrasonic vibration through a horn which in turn ultrasonically develops a compact, well-defined intense cavitation field 36 within the bath contained within tank 10.
  • the bath container 10 is provided with a width somewhat greater than the diameter of the largest semiconductor wafer intended for use therein.
  • the length of the bath is at least twice the diameter of the largest wafer.
  • the inlet , end of the bath is provided with a flow diffuser 20 arranged to generate generally non-turbulent flow throughout the bath area from fluid introduced through inlet 14.
  • the outlet end of the tank is provided with a fluid level-controlling weir 22 which functions to establish and control the liquid level. Drain openings 37 are provided at the base of the weir to remove liquid media and settled particulates.
  • a workpiece transport means 24 is provided with a pair of movable arms 26 which are movable to grip, via pins 28, a workpiece 30 which, in the preferred embodiment, is a semiconductor wafer from which a plurality of semiconductor chips may.be produced.
  • a workpiece 30 which, in the preferred embodiment, is a semiconductor wafer from which a plurality of semiconductor chips may.be produced.
  • the workpiece is gripped at the edges thereof leaving both surfaces open to contact with the bath fluid and to minimize particulate generation on the surfaces.
  • the upper surface of the workpiece 30 is intended to be the primary surface operated upon by the action of the ultrasonic transducer 18, but in fact both surfaces will undergo cleaning as the wafer is passed through the influence of the horn.
  • the workpiece transport 24 is also arranged for vertical movement to receive the wafer from a wafer transporter above the bath and to lower the wafer below the surface of the bath and for lateral motion along the length of the bath from the first, entrance position, illustrated in full in FIGS. 1 and 2, in a first direction to transport the wafer to the right beneath the radiating surface of the transducer, located at a second position, and then to a third, exit position at the opposite end of the bath, illustrated in phantom in FIG. 1.
  • the workpiece transport may provide a range of transport speeds to the wafer of from 1 to 3 inches per second.
  • the workpiece transport is then arranged to lift the cleaned wafer out of the tank and to release it for transfer to other operational stations.
  • the support is then lowered to clear the horn and returned to the first position to receive the next wafer.
  • a wall 38 is shown on the right side of the transducer which terminates just about the surface of the liquid and is provided to illustrate that the exit end of the bath is preferably disposed in a clean-room atmosphere to minimize recontamination of the wafer while that is not necessarily so for the entrance side of the apparatus.
  • the radiating surface 34 of the electroacoustic transducer is disposed at an angle of between 0 and .45 to the surface of the workpiece 30 and faces the first position where the wafer is loaded into 5 the bath.
  • the angling of the transducer with respect to the wafer surface has been found to provide several advantages:
  • the energy in the cavitation field propels particles dislodged from the wafer surface across the wafer in the direction
  • the electroacoustic transducer 18 is arranged in such position to provide an output of
  • transducer and horn is arranged to be mounted so that it may be adjustably disposed with respect to the liquid level and the wafer in the bath.
  • the adjustment is sufficient to provide a range of distances between the radiating surface of the horn
  • the bath may be provided with any liquid media or combination of liquid media which has been found satisfactory for cleaning workpieces
  • Ultrapure water is intended to refer to filtered and deionized water having a resistivity of at least 18 megohms
  • the ultrapure water provides an excellent solvent action for most contaminants on semiconductor wafers.
  • ultrapure water has the added advantage of leaving less residue which itself may contaminate the semiconductor wafer surface.
  • the fluid is introduced through inlet 14 and passes through a diffuser 20 which provides a uniform, laminar, and therefore non-turbulent, flow of the fluid from the inlet 14 to the outlet 16 passing the wafer and the electroacoustic transducer horn in a direction opposite to that of the movement of the wafer past the horn.
  • the liquid is supplied to the bath in a quantity of from one to three gallons per minute to provide a flow of one to three inches per second past the ultrasonic horn.
  • the bath is provided with a depth that is generally constant from the inlet diffuser 20 to just beyond the ultrasonic horn 18, with the depth then progressively increasing toward the outlet 16.
  • the purpose of the increasing depth from about the location of the horn is to assure that the flow of liquid decreases as it passes the horn so that the larger contaminants displaced from the surface of the workpiece 30 may settle in the bath and not be subjected to agitation whereby they may be redeposited upon the portion of the surface of the the workpiece which has already been cleaned.
  • a semiconductor wafer is supplied to the workpiece transport means 24 which at that time is raised above the bath at the first (left in the illustration) position and the bath is provided with a flow of ultrapure water of approximately one inch per second from the inlet to the outlet, generally in the direction indicated by arrow 19.
  • the electroacoustic transducer 18 is energized with a source of energy providing an output of about 100 watts per square inch of the radiating surface of the horn at a frequency of about 20kHz emitting 5 ultrasonic energy into the bath to form a compact, well-defined area of intense cavitation in the bath.
  • the radiating surface of the transducer means is disposed at an angle of about 10° to the surface of the wafer and facing the
  • the workpiece transport then lowers the wafer into the bath and then travels with the wafer in the direction indicated by arrow 21 from the first position, generally indicated at 40, toward and past the radiating surface of the
  • the wafer is disposed at a spacing of about 3/8 inch from the face of the ultrasonic transducer so that the cavitation energy in the bath dislodges any foreign
  • FIG. 3 An alternative embodiment is illustrated in FIG. 3 wherein similar components are provided with
  • the bath is provided with a substantially uniform depth from the fluid inlet end to the fluid outlet end.
  • the ultrasonic transducer is also disposed upright in this embodiment.
  • the wafer may remain stationary within the bath while
  • the transducer is moved therepast.
  • Such an arrangement can utilize a shorter bath since the wafer need not move, but there may be a greater risk of recontamination of the cleaned wafer surface.
  • the flow of the liquid media would be in the same direction as the relative movement of the transducer with respect to the wafer surface.
  • the cavitation action of the ultrasonic horn has been found to form minute vapor bubbles which then collapse, generating localized pressures of up to 200,000 psi. These pressures release energy to dislodge the particles from the semiconductor surface.
  • the effectiveness of this removal process is regulated by the energy level (watts per square inch of radiating surface) and the exposure time which is determined by the velocity of the wafer. It will also be appreciated that the flow of the liquid medium past the transducer and the moving workpiece, functions to move any displaced particles away from the already cleaned portion of the workpiece in a downstream direction, passing only over yet to be cleaned surfaces of the workpiece. Accordingly, the dislodged particles have less opportunity to recontaminate the already cleaned portions of the workpiece.

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Procédé et dispositif de nettoyage de tranches de semi-conducteurs (30) dans un bain de liquide, comprenant un organe permettant d'alimenter le bain en un milieu liquide tel que de l'eau ultra-pure et comportant un transducteur électro-acoustique (18) disposé dans le bain. Le transducteur (18) est excité à une fréquence comprise dans la plage allant de 20kHz à 90kHz pour former une zone restreinte et bien délimitée d'intense cavitation dans le bain (10). La pièce à usiner (30) est déplacée dans une première direction (21) et défile devant le transducteur (18) à travers la zone d'intense cavitation (36). L'eau ultra-pure s'écoule en passant autour du transducteur (18) et de la pièce à usiner (30) dans une direction (19) opposée au sens de défilement de la pièce à usiner (21) devant le transducteur (18).
PCT/US1987/001083 1986-05-16 1987-05-11 Procede et dispositif de nettoyage par ultrasons Ceased WO1987006862A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86463086A 1986-05-16 1986-05-16
US864,630 1986-05-16

Publications (1)

Publication Number Publication Date
WO1987006862A1 true WO1987006862A1 (fr) 1987-11-19

Family

ID=25343706

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1987/001083 Ceased WO1987006862A1 (fr) 1986-05-16 1987-05-11 Procede et dispositif de nettoyage par ultrasons

Country Status (2)

Country Link
CN (1) CN87103659A (fr)
WO (1) WO1987006862A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988004582A1 (fr) * 1986-12-18 1988-06-30 Eastman Kodak Company Appareil et procede de nettoyage ultrasonique
EP0407044A1 (fr) * 1989-06-13 1991-01-09 Shin-Etsu Handotai Company Limited Système obturateur
DE3937442A1 (de) * 1989-11-10 1991-05-16 Nokia Unterhaltungselektronik Verfahren zum bereichsweisen entfernen von schichten von einem substrat
EP0534497A1 (fr) * 1987-11-28 1993-03-31 Kabushiki Kaisha Toshiba Méthode de traitement de la surface d'une plaquette semi-conductrice
EP0604742A1 (fr) * 1988-03-30 1994-07-06 Malmros Holding, Inc. Méthode pour steriliser et nettoyer au moyen d'ultrasons
DE4407866A1 (de) * 1994-03-04 1995-09-07 Hielscher Gmbh Ultraschallintensivverfahren
US5665141A (en) * 1988-03-30 1997-09-09 Arjo Hospital Equipment Ab Ultrasonic treatment process
DE19618974A1 (de) * 1996-05-10 1997-11-13 Wacker Chemie Gmbh Verfahren zur Behandlung von Halbleitermaterial
US6337030B1 (en) 1997-02-04 2002-01-08 Canon Kabushiki Kaisha Wafer processing apparatus, wafer processing method, and SOI wafer fabrication method
US6391067B2 (en) 1997-02-04 2002-05-21 Canon Kabushiki Kaisha Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1958872B (zh) * 2006-10-12 2010-05-26 武汉科利尔化工有限公司 回收工件、夹具所带电镀液的方法
US9070723B2 (en) 2007-07-05 2015-06-30 Acm Research (Shanghai) Inc. Methods and apparatus for cleaning semiconductor wafers
CN103008282B (zh) * 2012-11-29 2015-07-15 北京七星华创电子股份有限公司 清洗兆声波换能器的装置
JP2014194965A (ja) * 2013-03-28 2014-10-09 Dainippon Screen Mfg Co Ltd 基板処理装置
CN106670180B (zh) * 2016-11-17 2022-04-22 天津滨海光热反射技术有限公司 应用于厚度1-4mm的薄玻璃基板的清洗装置及清洗方法
CN106623238B (zh) * 2016-11-17 2022-04-22 天津滨海光热反射技术有限公司 应用于厚度1-4mm的薄玻璃基板吸取转移式连续清洗系统及清洗方法
CN106623237B (zh) * 2016-11-17 2022-04-22 天津滨海光热反射技术有限公司 应用于厚度1-4mm的薄玻璃基板的转举式连续清洗系统及清洗方法
CN106733904B (zh) * 2016-11-17 2022-09-06 天津滨海光热反射技术有限公司 应用于薄玻璃基板的平举式连续清洗系统及清洗方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1108539B (de) * 1957-09-04 1961-06-08 Siemens Ag Einrichtung zum Behandeln von Gut in einem mit einem Zu- und Ablaufstutzen versehenen Fluessigkeitsbehaelter mittels Schall- oder Ultraschallwellen
US3893869A (en) * 1974-05-31 1975-07-08 Rca Corp Megasonic cleaning system
US4178188A (en) * 1977-09-14 1979-12-11 Branson Ultrasonics Corporation Method for cleaning workpieces by ultrasonic energy
US4326553A (en) * 1980-08-28 1982-04-27 Rca Corporation Megasonic jet cleaner apparatus
US4401131A (en) * 1981-05-15 1983-08-30 Gca Corporation Apparatus for cleaning semiconductor wafers

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1108539B (de) * 1957-09-04 1961-06-08 Siemens Ag Einrichtung zum Behandeln von Gut in einem mit einem Zu- und Ablaufstutzen versehenen Fluessigkeitsbehaelter mittels Schall- oder Ultraschallwellen
US3893869A (en) * 1974-05-31 1975-07-08 Rca Corp Megasonic cleaning system
US3893869B1 (fr) * 1974-05-31 1988-09-27
US4178188A (en) * 1977-09-14 1979-12-11 Branson Ultrasonics Corporation Method for cleaning workpieces by ultrasonic energy
US4326553A (en) * 1980-08-28 1982-04-27 Rca Corporation Megasonic jet cleaner apparatus
US4401131A (en) * 1981-05-15 1983-08-30 Gca Corporation Apparatus for cleaning semiconductor wafers

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988004582A1 (fr) * 1986-12-18 1988-06-30 Eastman Kodak Company Appareil et procede de nettoyage ultrasonique
EP0534497A1 (fr) * 1987-11-28 1993-03-31 Kabushiki Kaisha Toshiba Méthode de traitement de la surface d'une plaquette semi-conductrice
EP0604742A1 (fr) * 1988-03-30 1994-07-06 Malmros Holding, Inc. Méthode pour steriliser et nettoyer au moyen d'ultrasons
US5665141A (en) * 1988-03-30 1997-09-09 Arjo Hospital Equipment Ab Ultrasonic treatment process
EP0407044A1 (fr) * 1989-06-13 1991-01-09 Shin-Etsu Handotai Company Limited Système obturateur
DE3937442A1 (de) * 1989-11-10 1991-05-16 Nokia Unterhaltungselektronik Verfahren zum bereichsweisen entfernen von schichten von einem substrat
DE4407866A1 (de) * 1994-03-04 1995-09-07 Hielscher Gmbh Ultraschallintensivverfahren
DE19618974A1 (de) * 1996-05-10 1997-11-13 Wacker Chemie Gmbh Verfahren zur Behandlung von Halbleitermaterial
US6337030B1 (en) 1997-02-04 2002-01-08 Canon Kabushiki Kaisha Wafer processing apparatus, wafer processing method, and SOI wafer fabrication method
US6391067B2 (en) 1997-02-04 2002-05-21 Canon Kabushiki Kaisha Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus

Also Published As

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