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WO1980000510A1 - Procede pour la fabrication de dispositifs semi-conducteurs - Google Patents

Procede pour la fabrication de dispositifs semi-conducteurs Download PDF

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Publication number
WO1980000510A1
WO1980000510A1 PCT/DE1979/000097 DE7900097W WO8000510A1 WO 1980000510 A1 WO1980000510 A1 WO 1980000510A1 DE 7900097 W DE7900097 W DE 7900097W WO 8000510 A1 WO8000510 A1 WO 8000510A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
semiconductor material
semiconductor
layer
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE1979/000097
Other languages
German (de)
English (en)
Inventor
H Schaumburg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Original Assignee
Philips Patentverwaltung GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Patentverwaltung GmbH filed Critical Philips Patentverwaltung GmbH
Publication of WO1980000510A1 publication Critical patent/WO1980000510A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • C23C14/5813—Thermal treatment using lasers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/584—Non-reactive treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10P34/42—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for producing semiconductor components with a polycrystalline or monocrystalline semiconductor material layer on a substrate.
  • the active semiconductor layer is applied to a substrate that is resistant to high temperatures, since, at least in the case of a monocrystalline semiconductor layer, this layer is applied to the substrate at high temperatures and because both the substrate and the further temperature treatments required for the production of semiconductor components , as well as the active semiconductor layer are heated to a high temperature in an oven.
  • the invention has for its object to design the method according to the preamble of claim 1, that the use of high temperature resistant substrates can be dispensed with, ie they can be replaced by less expensive materials.
  • substrates can be used which are not resistant to temperatures that are normally required for the application of, in particular, monocrystalline semiconductor material layers.
  • the method according to the invention also allows several layers of different doping and / or of different semiconductor material to be applied next to one another in a substrate, in which then semiconductor circuit elements with different properties can be produced.
  • a semiconductor material can also be used as the substrate.
  • FIG. 1 shows a substrate 1 made of aluminum doped with approximately 1% silicon, onto which an approximately 2 ⁇ m thick amorphous silicon layer 2 is sputtered.
  • the layer 2 can also be deposited on the substrate 1 from the gas phase at low temperatures.
  • the amorphous silicon layer 2 is then N-doped with arsenic by an ion implantation indicated by the arrow 3.
  • an intensive optical radiation is then directed onto the layer 2, which, thanks to a mask 5, remains limited to the two regions 21, in which the amorphous silicon is then locally heated by the optical radiation that it recrystallizes.
  • the radiation 4 is then moved over the surface of the regions 21 of the amorphous silicon layer 2 such that e.g. Form stripe-shaped, largely monocrystalline areas.
  • semiconductor circuit elements can then be produced by further method steps.
  • thermal treatments may be carried out which only heat the areas locally, since otherwise there is a risk that the parts of the layer 2 which have remained amorphous and thus insulating will likewise convert into polycrystalline or monocrystalline and thus conduct the material .
  • a substrate 1 made of aluminum with approximately 1% silicon is assumed, onto which approximately 2 ⁇ m thick layer 2 of amorphous silicon, which is weakly doped with boron, that is to say P-conducting, is deposited.
  • Arsenic is then introduced into this layer 2, as indicated by the arrow 3, by ion implantation, so that (see FIG. 4) an N + conductive zone 22 is formed on the surface of this layer.
  • the amorphous layer 2 is then converted into a polycrystalline silicon layer by an intensive optical radiation indicated by the arrow 4.
  • zone 22 then forms a PN junction with the rest of layer 2 and all PN junctions together form the solar cell.
  • a thin, radiation-permeable metal layer 6 is then vapor-deposited onto the surface of the layer 2, ie the zone 22.
  • the conductive substrate 1 and the metal layer 6 are then provided with connecting conductors 7.
  • a pulsed or continuously operated laser can, for example, be used as the source of the intensive optical radiation 3 in the exemplary embodiments described here.
  • a locally limited thermal treatment can also be carried out with the aid of a laser if semiconductor circuit elements whose production requires thermal treatment are to be produced in the monocrystalline regions (21, FIG. 2).
  • a material should always be used for the substrate 1 which does not yet form an alloy with the amorphous semiconductor material into a polycrystalline or monocrystalline semiconductor material.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Pour realiser sur un substrat d'un dispositif a semi-conducteur une couche de materiau semi-conducteur (27) poly-ou monocristalline (une couche polycristalline dans le cas par exemple d'une cellule solaire), le materiau est depose sous forme amorphe sur le substrat par exemple vaporise, puis au moyen d'un traitement thermique par un rayonnement optique (4) applique sur le materiau, transforme en une couche poly- ou monocristalline.
PCT/DE1979/000097 1978-08-30 1979-08-29 Procede pour la fabrication de dispositifs semi-conducteurs Ceased WO1980000510A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2837750 1978-08-30
DE19782837750 DE2837750A1 (de) 1978-08-30 1978-08-30 Verfahhren zum herstellen von halbleiterbauelementen

Publications (1)

Publication Number Publication Date
WO1980000510A1 true WO1980000510A1 (fr) 1980-03-20

Family

ID=6048211

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE1979/000097 Ceased WO1980000510A1 (fr) 1978-08-30 1979-08-29 Procede pour la fabrication de dispositifs semi-conducteurs

Country Status (3)

Country Link
EP (1) EP0020395A1 (fr)
DE (1) DE2837750A1 (fr)
WO (1) WO1980000510A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015677A1 (fr) * 1979-02-28 1980-09-17 Vlsi Technology Research Association Procédé de fabrication de dispositifs semiconducteurs
EP0037261A1 (fr) * 1980-03-27 1981-10-07 Fujitsu Limited Procédé de fabrication d'un dispositif semiconducteur et dispositif, p. ex. un BOMIS FET, réalisé selon ce procédé
EP0045551A1 (fr) * 1980-08-05 1982-02-10 L'Etat belge, représenté par le Secrétaire Général des Services de la Programmation de la Politique Scientifique Procédé de préparation de films polycristallins semi-conducteurs composés ou élémentaires et films ainsi obtenus
EP0035561A4 (fr) * 1979-09-13 1984-08-08 Massachusetts Inst Technology Procede ameliore de cristallisation de materiau amorphe avec un faisceau d'energie mobile.
CN106876270A (zh) * 2015-12-11 2017-06-20 英飞凌科技股份有限公司 用于形成半导体器件的方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
DE3816256A1 (de) * 1988-05-11 1989-11-23 Siemens Ag Verfahren zum herstellen einer aus einem ersten halbleitermaterial bestehenden einkristallinen schicht auf einem substrat aus einem andersartigen zweiten halbleitermaterial und verwendung der anordnung zur herstellung von optoelektronischen integrierten schaltungen

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1933690A1 (de) * 1968-10-18 1970-04-30 Ibm Verfahren zur Erzeugung von Einkristallen auf Traegersubstraten
FR2212177A1 (fr) * 1972-12-29 1974-07-26 Ibm
US3853648A (en) * 1972-08-14 1974-12-10 Material Sciences Corp Process for forming a metal oxide pattern
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
FR2390004A1 (en) * 1977-05-04 1978-12-01 Commissariat Energie Atomique Semiconductors, such as bipolar transistors - with amorphous layers locally crystallised by e.g. laser to reduce number of mfg. operations

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1933690A1 (de) * 1968-10-18 1970-04-30 Ibm Verfahren zur Erzeugung von Einkristallen auf Traegersubstraten
US3853648A (en) * 1972-08-14 1974-12-10 Material Sciences Corp Process for forming a metal oxide pattern
FR2212177A1 (fr) * 1972-12-29 1974-07-26 Ibm
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
FR2390004A1 (en) * 1977-05-04 1978-12-01 Commissariat Energie Atomique Semiconductors, such as bipolar transistors - with amorphous layers locally crystallised by e.g. laser to reduce number of mfg. operations

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin, Band 19, Nr. 11, herausgegeben April 1977, Armonk New York (US) P.S. HO: "Multibeam method for growing large-grain semiconductor films", siehe Seiten 4438-4440. *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015677A1 (fr) * 1979-02-28 1980-09-17 Vlsi Technology Research Association Procédé de fabrication de dispositifs semiconducteurs
EP0035561A4 (fr) * 1979-09-13 1984-08-08 Massachusetts Inst Technology Procede ameliore de cristallisation de materiau amorphe avec un faisceau d'energie mobile.
EP0037261A1 (fr) * 1980-03-27 1981-10-07 Fujitsu Limited Procédé de fabrication d'un dispositif semiconducteur et dispositif, p. ex. un BOMIS FET, réalisé selon ce procédé
EP0045551A1 (fr) * 1980-08-05 1982-02-10 L'Etat belge, représenté par le Secrétaire Général des Services de la Programmation de la Politique Scientifique Procédé de préparation de films polycristallins semi-conducteurs composés ou élémentaires et films ainsi obtenus
CN106876270A (zh) * 2015-12-11 2017-06-20 英飞凌科技股份有限公司 用于形成半导体器件的方法
CN106876270B (zh) * 2015-12-11 2020-06-30 英飞凌科技股份有限公司 用于形成半导体器件的方法

Also Published As

Publication number Publication date
EP0020395A1 (fr) 1981-01-07
DE2837750A1 (de) 1980-03-13

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