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US3812361A - Process and apparatus for visualizing gamma ray images - Google Patents

Process and apparatus for visualizing gamma ray images Download PDF

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US3812361A
US3812361A US00195345A US19534571A US3812361A US 3812361 A US3812361 A US 3812361A US 00195345 A US00195345 A US 00195345A US 19534571 A US19534571 A US 19534571A US 3812361 A US3812361 A US 3812361A
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semi
strips
conducting plate
electron
gamma
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R Prag
J Dierker
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Siemens AG
Siemens Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/161—Applications in the field of nuclear medicine, e.g. in vivo counting
    • G01T1/164—Scintigraphy
    • G01T1/1641—Static instruments for imaging the distribution of radioactivity in one or two dimensions using one or several scintillating elements; Radio-isotope cameras
    • G01T1/1645—Static instruments for imaging the distribution of radioactivity in one or two dimensions using one or several scintillating elements; Radio-isotope cameras using electron optical imaging means, e.g. image intensifier tubes, coordinate photomultiplier tubes, image converter
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

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  • ABSTRACT A process and a device for visualizing gamma ray images use a semi-conducting plate which is provided on both sides with electrode strips extending parallel to each other, the direction of the strips on one side extending at an angle to the direction of strips on the other side.
  • the invention is particularly characterized in that the gamma quanta are changed into electron bundles and are represented upon the semiconducting plate.
  • the electrode strips are connected with a device for core formation which produces representable local signals localizing the electron bundle striking the semi-conducting plate.
  • This invention relates to a process and a device for visualizing gamma ray images by means of a semiconducting plate which makes possible to determine the location of absorption of an ionizing particle, in that it is provided on both sides with electrode strips extending parallel to each other, whereby the direction of the strips upon one side forms an angle with the direction of strips upon the other side.
  • a device of this type is used, for example, in the nuclear medical diagnosis to make visible the distribution of incorporated radioactive substances which are preferably fed to certain organs or sick tissues.
  • Semi-conducting devices particularly in the shape of semi-conducting plates, which make possible a localization of the absorption place of ionized ray emission, are known in the art. These devices consist, for example, of a semi-conducting plate the opposed principal surfaces of which are provided with parallel electrode strips, whereby the direction of strips upon one side forms an angle with the strips upon the other side, preferably an angle of 90.
  • the contacts between the electrodes and the semi-conducting, plate have upon one side a rectifying and upon the other side an ohmic characteristic.
  • An object of the present invention is to eliminate these drawbacks of existing constructions.
  • the transformation into the electron image can be carried out with a suitable device, for example, a scintillator-photo-cathode combination, such as is used for image changers known in X-ray technology and isotope diagnosis. They consist mostly of a vacuum tube containing a light screen behind the inlet surface which is followed in optical contact by the actual photocathode layer.
  • a scintillator-photo-cathode combination such as is used for image changers known in X-ray technology and isotope diagnosis. They consist mostly of a vacuum tube containing a light screen behind the inlet surface which is followed in optical contact by the actual photocathode layer.
  • the electron ray image is thereupon produced by a system of electrodes to which voltages of different values are applied, electron optically upon a semi-conducting plate, possibly of smaller size.
  • the device of the present invention has the advantage that it can use semi-conducting plates with a small diameter. Furthermore, the proof probability of gamma radiation is considerably better due to the good absorption of electrons, than in the case of direct reception of gamma ray image in the semi-conducting layer.
  • the proof probability can be primarily increased by the use of a scintillation crystal, such as thallium activated sodium iodide, as primary ray detector.
  • a scintillation crystal such as thallium activated sodium iodide
  • This has can be produced in sufficiently large sizes as single crystals having the size of the bodily organ being examined. lnstead of a single crystal of corresponding size a matrix of many individual crystals can be used which are located one next to the other.
  • the releasing capacity of this arrangement is limited, however, by the size of the screen of the crystal matrix.
  • the location of the maximum or the core point of this intensity distribution corresponds to the location of the striking point of the initial gamma quantum. In order to localize this striking point it is therefore necessary to determine the core point of the intensity distribution. This can take place by determining the corresponding core points in the two directions provided by the stripshaped contacts.
  • the strip-shaped screen formulation of the semi-conducting contacting unit must be so narrow, or the size of the electronic optical image must be so selected, that the image spot of the. electronic distribution should cover at least a surface upon which there are nine (3 X 3) intersection points of the electrodes.
  • 3 X 3) intersection points of the electrodes In case of semi-conducting plates used in electronic optical vacuum changers from about 10 to strips are sufficient for the above purposes in order to produce an image sharpness required for images now in use.
  • the semi-conducting plate can consist of known semi-conductors, such as, for example, silicon or germanium. Electrons striking the plate and absorbed by it have through the electrostatic acceleration in an electronic optical representation depending upon the acceleration voltage an energy of 10 to 40 keV and they produce in the striken layer pairs of holes of electrons which are collected upon the strip-like electrodes. Consequently,charging impulses are produced upon the electrode strips the size of which depends in addition to the acceleration voltage upon the number of the striking electrons. Thus an impulse height distribution will be registered upon the participating electrode strips which corresponds to the electron distribution in the image spot.
  • the core point of the x and y coordinates can be easily determined in a known manner, for example, by means of a digital calculator or by the use of analogous circuits as they are used, for example, in a gamma camera according to Anger.
  • the reproduction of the image is possible by known reproducing devices, such as, for example, an XY-oscillograph, a telescopic screen, image printers, etc.
  • the sum of all impulse values appearing upon the electrode strip is proportional to the totally formed charge carrier, i.e., when the acceleration voltage is given, to the number of all striking electrons.
  • the number of electrons is proportional to the energy of the absorbed gamma quantum, to the extent that it is absorbed by the photo effect.
  • FIG. 1 is a sectiln through an electronic optical image magnifier wherein in accordance with the present invention the released electron bundle. is represented upon a semi-conducting plate as'an outlet screen.
  • FIG. 2 is a perspective view of a semi-conducting plate on an enlarged scale.
  • FIG. 3 is a diagram of the electronic circuit by means of which the core points of the striking surfaces of the electron bundle upon the semi-conducting plate can be determined.
  • FIG. 1 shows an image magnifier l with a glass case 2.
  • the photo-cathode layer 3 located within the case at its inlet side consists in the illustrated device of antimony activated by caesium. It is followed by annular electrodes 4, 5 and 6 extending concentrically to the cathode 3, as well as the anode 7.
  • the anode is closed by a semi-conducting plate 8 lying at the outlet window 9 of the image magnifier.
  • the light conducting device 12 having silicon oil used as the optical coupling layer 11 and provided at its free end with a further coupling layer 13 which also consists of silicon oil and which is connected to the scintillation crystal 14.
  • the silicon oil can be replaced by other coupling means, such as the known optical luting.
  • organs marked with gamma ray conductors are pictured in the crystal 14 with the use of a parallel hole collimator 14'.
  • Gamma rays-passing through the holes of the collimator 14 which are indicated by arrows 15 in FIG. 1, are absorbed in the scintillation crystal 14 while sending out light. They light thus produced is transmitted through the glass rods 12 serving as light conductors and having adiamet er of 7 mm, to the photo-cathode 3 and releases electrons there.
  • the electrodes 3 to 7 impress the electrons electronically optically in a known manner upon the semi-conducting plate 8.
  • the plate is provided upon both surfaces with strip contacts separated from each other, as electrodes.
  • the electrodes 16 directed to the cathode constitute in the semi-conductor of the described type surface lock layer counters and the outlet window 9, the direction of which is changed by relatively to the strips 16, consist of steamed on aluminum.
  • the semi-conducting plate in the illustrated example consists of n-type silicon, has a thickness of 300 p. and a diameter of about 30 mm.; it dissolves the electron spot released by the rays 15 and produced by image magnifying electron optics into individual strips which are shown sectionwise in FIG. 2 and which form electron hole pairs collected for localizing. The intersections of electrode strips 16 and 17 struck by the electron spot operate then as surface lock layer detectors similar to counter diodes.
  • FIG. 3 shows only some of the electrode strips 16 and 17 which are actually present in this embodiment; they are connected by high ohmic resistances 16' and 17 with the coresponding dc. voltage source 34.
  • the strips 18 and 22 (corresponding to 16) and in the transversely extending electrode strips 23 to 27 (corresponding to 17) are collected electron hole pairs produced by the electron bundle penetrating into the spot 45; they are amplified in the charge-sensitive preamplifiers 18' to 22' and 23' to 27 to signals which can be further treated.
  • the signals X which refer to the istrips 18 to 22 and the amount of which corresponds to the part of charge carriers from the electron spot 45 collected on one side, are measured in the coordinate circuit 28 corresponding to the location of the corresponding electrode strip, i being the number of the continued counting of strips and x and the x-coordinate.
  • the signal x,- is impressed by a factor a,- with the use of a voltage divider from the resistances 35 to 44.
  • the measuring factors a constitute discrete coordinate values of the corresponding strips i in the xdirection.
  • the examined signals a, x are summed up in a sum magnifier 29. Then a signal 2 a; x, is produced from which by division in the quotient forming device 31 through the sum signal of all unexamined signals x,
  • the X signal and Y signal produced in the corresponding manner by the use of rear surface contact strips 2 5 to 27 in the coordinate circuit 33 (identical to 28) are applied in this embodiment to the imaging element 32 of an XY oscilloscope and are light tested with a Z signal which is produced by impulse'height discrimination of the unexamined sum signal 2 x; in one channel discriminator 46. Then the core point of the spot 45 of the electron bundle striking the semi-conducting plate is represented in the XY" diagram of the element 32. Due to the formation of electrons indicated in FIG. 1 it corresponds to the place of the original absorption location of a gamma quantum of the energy inthe scintillation crystal 14 determined by the discriminator 46, so that the desired visible representation is attained.
  • a device for representing organs marked by gamma rays comprising in combination a semiconducting plate, electrode strips located on both sides of the plate and extending parallel to each other, the direction of the strips on one side extending at an angle to the direction of strips on the other side, means connected with said plate for changing the gamma quanta into electron bundles, a device connected with said plate for producing signals corresponding to gamma ray images, said device comprising calculating means for forming signals which correspond to core points of electron spots on said semi-conducting plate, and a device for treating the last-mentioned signals and actuating visualizing means.
  • the device for core formation includes an imaging element and an impulse discriminator located in the path of the representable signal directed to said imaging element.

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  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
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Abstract

A process and a device for visualizing gamma ray images use a semi-conducting plate which is provided on both sides with electrode strips extending parallel to each other, the direction of the strips on one side extending at an angle to the direction of strips on the other side. The invention is particularly characterized in that the gamma quanta are changed into electron bundles and are represented upon the semi-conducting plate. The electrode strips are connected with a device for core formation which produces representable local signals localizing the electron bundle striking the semi-conducting plate.

Description

United States Patent 1191 Prag et a1.
[ PROCESS AND APPARATUS FOR VISUALIZING GAMMA RAY IMAGES [75] Inventors: Rudolf Prag, Marloffstein; Joachim Dierker, Buckenhof, both of Germany [73] Assignee: Siemens Aktiengesellschaft,
Erlangen, Germany 221 Filed: Nov. 3, 1971 211 Appl. No: 195,345
[52] U.S. Cl. 250/370, 250/366 [51] Int. Cl. G01! 1/24 [58] Field of Search... 250/715 R, 83.3 R, 213 VT,
9/1970 Oosthoek et a1. 250/833 R 1 51 May21, 1974 3,683,185 8/1972 Muehllehner 250/7l.5 R
Primary ExaminerArchie R. Borchelt Assistant Examiner-Davis L. Willis Attorney, Agent, or Firm-Richards & Geier [57] ABSTRACT A process and a device for visualizing gamma ray images use a semi-conducting plate which is provided on both sides with electrode strips extending parallel to each other, the direction of the strips on one side extending at an angle to the direction of strips on the other side. The invention is particularly characterized in that the gamma quanta are changed into electron bundles and are represented upon the semiconducting plate. The electrode strips are connected with a device for core formation which produces representable local signals localizing the electron bundle striking the semi-conducting plate.
5 Claims, 3 Drawing Figures HTENTEUVAY 21 I974 sum 1 or z INVEIYTORS.
ATTOYLNCSS PROCESS AND APPARATUS FOR VISUALIZING GAMMA RAY IMAGES This invention relates to a process and a device for visualizing gamma ray images by means of a semiconducting plate which makes possible to determine the location of absorption of an ionizing particle, in that it is provided on both sides with electrode strips extending parallel to each other, whereby the direction of the strips upon one side forms an angle with the direction of strips upon the other side. A device of this type is used, for example, in the nuclear medical diagnosis to make visible the distribution of incorporated radioactive substances which are preferably fed to certain organs or sick tissues.
Semi-conducting devices, particularly in the shape of semi-conducting plates, which make possible a localization of the absorption place of ionized ray emission, are known in the art. These devices consist, for example, of a semi-conducting plate the opposed principal surfaces of which are provided with parallel electrode strips, whereby the direction of strips upon one side forms an angle with the strips upon the other side, preferably an angle of 90. The contacts between the electrodes and the semi-conducting, plate have upon one side a rectifying and upon the other side an ohmic characteristic.
These known semi-conducting detectors have not found acceptance up to now since due to the small produceable layer strengths they have only a small absorpton probability and thus a small output for the gamma rays. Furthermore, they can not be made of sufficiently large surface sizes, to be able to be used directly for representing the distribution of radioactive substances in an organism.
An object of the present invention is to eliminate these drawbacks of existing constructions.
Other objects will become apparent in the course of the following specification.
In the accomplishment of the objectives of the present invention it was found desirable to transform the gamma ray image into an electron ray image which is then represented upon the semi-conducting plate, the electrode strips of which are connected with a device for core formation and for producing representable local signals for localizing the electron bundle striking the semi-conducting plate.
The transformation into the electron image can be carried out with a suitable device, for example, a scintillator-photo-cathode combination, such as is used for image changers known in X-ray technology and isotope diagnosis. They consist mostly of a vacuum tube containing a light screen behind the inlet surface which is followed in optical contact by the actual photocathode layer. The electron ray image is thereupon produced by a system of electrodes to which voltages of different values are applied, electron optically upon a semi-conducting plate, possibly of smaller size.
As compared to known devices the device of the present invention has the advantage that it can use semi-conducting plates with a small diameter. Furthermore, the proof probability of gamma radiation is considerably better due to the good absorption of electrons, than in the case of direct reception of gamma ray image in the semi-conducting layer.
The proof probability can be primarily increased by the use of a scintillation crystal, such as thallium activated sodium iodide, as primary ray detector. This has can be produced in sufficiently large sizes as single crystals having the size of the bodily organ being examined. lnstead of a single crystal of corresponding size a matrix of many individual crystals can be used which are located one next to the other. The releasing capacity of this arrangement is limited, however, by the size of the screen of the crystal matrix. There is also the possibility of using steamed upon layers of scintillating material.
The natural result of large layer thicknesses is that the light produced during an absorption procedure in the scintillation crystal is widened before it reaches the photo-cathode coupled to the crystal. The resulting absorption of light division resulting from a single gamma quantum and thus the distribution of electrons released from the photo-cathode, have a more or less great widening dependant upon the geometry of the arrangement. The electornic optical representation of this practically gauss-shaped light and electron division upon the semi-conducting plate results, therefore, in an image spot with corresponding extension and intensity distribution of electronsstriking the semi-conducting plate.
The location of the maximum or the core point of this intensity distribution corresponds to the location of the striking point of the initial gamma quantum. In order to localize this striking point it is therefore necessary to determine the core point of the intensity distribution. This can take place by determining the corresponding core points in the two directions provided by the stripshaped contacts.
To make possible the core determination with sufficient'precision the strip-shaped screen formulation of the semi-conducting contacting unit must be so narrow, or the size of the electronic optical image must be so selected, that the image spot of the. electronic distribution should cover at least a surface upon which there are nine (3 X 3) intersection points of the electrodes. In case of semi-conducting plates used in electronic optical vacuum changers from about 10 to strips are sufficient for the above purposes in order to produce an image sharpness required for images now in use.
The semi-conducting plate can consist of known semi-conductors, such as, for example, silicon or germanium. Electrons striking the plate and absorbed by it have through the electrostatic acceleration in an electronic optical representation depending upon the acceleration voltage an energy of 10 to 40 keV and they produce in the striken layer pairs of holes of electrons which are collected upon the strip-like electrodes. Consequently,charging impulses are produced upon the electrode strips the size of which depends in addition to the acceleration voltage upon the number of the striking electrons. Thus an impulse height distribution will be registered upon the participating electrode strips which corresponds to the electron distribution in the image spot. Then the core point of the x and y coordinates (the two strip directions) can be easily determined in a known manner, for example, by means of a digital calculator or by the use of analogous circuits as they are used, for example, in a gamma camera according to Anger. The reproduction of the image is possible by known reproducing devices, such as, for example, an XY-oscillograph, a telescopic screen, image printers, etc.
The sum of all impulse values appearing upon the electrode strip is proportional to the totally formed charge carrier, i.e., when the acceleration voltage is given, to the number of all striking electrons. The number of electrons is proportional to the energy of the absorbed gamma quantum, to the extent that it is absorbed by the photo effect. By analysing the impulse value of the total signal, for example, by means of a one channel discriminator, it is possible to find certain occurrences, for example, those released by a gamma quantum of aspecific energy. This makes it possible to separate rays which are different in energy, for example, to separate distributing stray rays or underground rays from the useful rays. In order to provide a summing signal it is sufficient to use only signals upon the electrode strips upon one of the surfaces of the semiconducting plate, since both sides of the semiconducting plate participate in the collection of formed charge carriers.
The invention will appear more clearly from the following detailed description when taken in connection with the accompanying drawings showing by way of example only, a preferred embodiment of the inventive idea.
In the drawings: I
FIG. 1 is a sectiln through an electronic optical image magnifier wherein in accordance with the present invention the released electron bundle. is represented upon a semi-conducting plate as'an outlet screen.
FIG. 2 is a perspective view of a semi-conducting plate on an enlarged scale.
FIG. 3 is a diagram of the electronic circuit by means of which the core points of the striking surfaces of the electron bundle upon the semi-conducting plate can be determined. A
FIG. 1 shows an image magnifier l with a glass case 2. The photo-cathode layer 3 located within the case at its inlet side consists in the illustrated device of antimony activated by caesium. It is followed by annular electrodes 4, 5 and 6 extending concentrically to the cathode 3, as well as the anode 7. The anode is closed by a semi-conducting plate 8 lying at the outlet window 9 of the image magnifier. In front of the inlet window 10 there is provided the light conducting device 12 having silicon oil used as the optical coupling layer 11 and provided at its free end with a further coupling layer 13 which also consists of silicon oil and which is connected to the scintillation crystal 14.
The silicon oil can be replaced by other coupling means, such as the known optical luting.
In the illustrated example, organs marked with gamma ray conductors are pictured in the crystal 14 with the use of a parallel hole collimator 14'. Gamma rays-passing through the holes of the collimator 14 which are indicated by arrows 15 in FIG. 1, are absorbed in the scintillation crystal 14 while sending out light. They light thus produced is transmitted through the glass rods 12 serving as light conductors and having adiamet er of 7 mm, to the photo-cathode 3 and releases electrons there. The electrodes 3 to 7 impress the electrons electronically optically in a known manner upon the semi-conducting plate 8. The plate is provided upon both surfaces with strip contacts separated from each other, as electrodes. The electrodes 16 directed to the cathode constitute in the semi-conductor of the described type surface lock layer counters and the outlet window 9, the direction of which is changed by relatively to the strips 16, consist of steamed on aluminum. The semi-conducting plate in the illustrated example consists of n-type silicon, has a thickness of 300 p. and a diameter of about 30 mm.; it dissolves the electron spot released by the rays 15 and produced by image magnifying electron optics into individual strips which are shown sectionwise in FIG. 2 and which form electron hole pairs collected for localizing. The intersections of electrode strips 16 and 17 struck by the electron spot operate then as surface lock layer detectors similar to counter diodes.
The determination of the striking location of the electron spot or of its center. takes place in the gamma cameras in a manner known per se by analog core formation. For clearer representation FIG. 3 shows only some of the electrode strips 16 and 17 which are actually present in this embodiment; they are connected by high ohmic resistances 16' and 17 with the coresponding dc. voltage source 34. As indicated in FIG. 3, in the strips 18 and 22 (corresponding to 16) and in the transversely extending electrode strips 23 to 27 (corresponding to 17) are collected electron hole pairs produced by the electron bundle penetrating into the spot 45; they are amplified in the charge-sensitive preamplifiers 18' to 22' and 23' to 27 to signals which can be further treated. The signals X, which refer to the istrips 18 to 22 and the amount of which corresponds to the part of charge carriers from the electron spot 45 collected on one side, are measured in the coordinate circuit 28 corresponding to the location of the corresponding electrode strip, i being the number of the continued counting of strips and x and the x-coordinate. For the measurment the signal x,- is impressed by a factor a,- with the use of a voltage divider from the resistances 35 to 44. By a suitable selection of resistances 35 to 44 the measuring factors a, constitute discrete coordinate values of the corresponding strips i in the xdirection. For this suitably selected resistances are used which produce voltage dividers, the ratio of which corresponds to a and is i/i There i is the running number and i the largest available number of strips. Furthermore, the sums of thetwo resistances of each voltage divider are equal. v
The examined signals a, x, are summed up in a sum magnifier 29. Then a signal 2 a; x, is produced from which by division in the quotient forming device 31 through the sum signal of all unexamined signals x,
produced in the sum magnifier 30 the following standarized local signal is produced:
The X signal and Y signal produced in the corresponding manner by the use of rear surface contact strips 2 5 to 27 in the coordinate circuit 33 (identical to 28) are applied in this embodiment to the imaging element 32 of an XY oscilloscope and are light tested with a Z signal which is produced by impulse'height discrimination of the unexamined sum signal 2 x; in one channel discriminator 46. Then the core point of the spot 45 of the electron bundle striking the semi-conducting plate is represented in the XY" diagram of the element 32. Due to the formation of electrons indicated in FIG. 1 it corresponds to the place of the original absorption location of a gamma quantum of the energy inthe scintillation crystal 14 determined by the discriminator 46, so that the desired visible representation is attained.
What is claimed is:
1. A device for representing organs marked by gamma rays, comprising in combination a semiconducting plate, electrode strips located on both sides of the plate and extending parallel to each other, the direction of the strips on one side extending at an angle to the direction of strips on the other side, means connected with said plate for changing the gamma quanta into electron bundles, a device connected with said plate for producing signals corresponding to gamma ray images, said device comprising calculating means for forming signals which correspond to core points of electron spots on said semi-conducting plate, and a device for treating the last-mentioned signals and actuating visualizing means.
2. A device in accordance with claim 1, wherein the 5. A device in accorance with claim 1, wherein the device for core formation includes an imaging element and an impulse discriminator located in the path of the representable signal directed to said imaging element. l l

Claims (5)

1. A device for representing organs marked by gamma rays, comprising in combination a semi-conducting plate, electrode strips located on both sides of the plate and extending parallel to each other, the direction of the strips on one side extending at an angle to the direction of strips on the other side, means connected with said plate for changing the gamma quanta into electron bundles, a device connected with said plate for producing signals corresponding to gamma ray images, said device comprising calculating means for forming signals which correspond to core points of electron spots on said semi-conducting plate, and a device for treating the last-mentioned signals and actuating visualizing means.
2. A device in aCcordance with claim 1, wherein the semi-conducting plate located in said image magnifier has a number of electrode strips adapted to the required localizing, whereby at least three pairs of strips are used for localizing an electron bundle produced for the absorption of a gamma quantum.
3. A device in accordance with claim 2, wherein the number of electrodes carried by the semi-conducting plate ranges from 10 to 140.
4. A device in accordance with claim 1, wherein the device for core formation includes a digital calculator.
5. A device in accorance with claim 1, wherein the device for core formation includes an imaging element and an impulse discriminator located in the path of the representable signal directed to said imaging element.
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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3873838A (en) * 1974-04-22 1975-03-25 Atomic Energy Commission Two-dimensional readout system for radiation detector
US3919556A (en) * 1974-05-15 1975-11-11 Gen Electric Gamma camera
US3919557A (en) * 1974-05-15 1975-11-11 Gen Electric Whole body line scanner
US3925669A (en) * 1972-08-14 1975-12-09 Siemens Ag Stripline radiation detection apparatus
US4047037A (en) * 1976-02-09 1977-09-06 The Ohio State University Gamma ray camera for nuclear medicine
US4048502A (en) * 1974-09-04 1977-09-13 Siemens Aktiengesellschaft Electro-optical transducer
US4055766A (en) * 1976-04-27 1977-10-25 The Ohio State University Control system for gamma camera
US4055765A (en) * 1976-04-27 1977-10-25 The Ohio State University Gamma camera system with composite solid state detector
USRE30904E (en) * 1976-04-27 1982-04-13 The Ohio State University Control system for gamma camera
WO1983003683A1 (en) * 1982-04-18 1983-10-27 Koslow Techn Corp Large arrays of discrete ionizing radiation detectors multiplexed using fluorescent optical converters
FR2542451A1 (en) * 1983-03-09 1984-09-14 Labo Electronique Physique Device for photodetection and location of photonic events and positron-tomography apparatus comprising a gammagraphy camera equipped with such devices
US5005195A (en) * 1989-03-10 1991-04-02 Expert Image Systems, Inc. Digital readout system for radiographic imaging
WO1996010194A1 (en) * 1994-09-29 1996-04-04 Yissum Research Development Company Of The Hebrew University Of Jerusalem A radiation detection system and processes for preparing the same
US5656818A (en) * 1993-01-18 1997-08-12 Integrert Detektor Og Elektronikk As Electronic radiation imaging system
US5892227A (en) * 1994-09-29 1999-04-06 Yissum Research Development Company Of The Hebrew University Of Jerusalem Radiation detection system and processes for preparing the same

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925669A (en) * 1972-08-14 1975-12-09 Siemens Ag Stripline radiation detection apparatus
US3873838A (en) * 1974-04-22 1975-03-25 Atomic Energy Commission Two-dimensional readout system for radiation detector
US3919556A (en) * 1974-05-15 1975-11-11 Gen Electric Gamma camera
US3919557A (en) * 1974-05-15 1975-11-11 Gen Electric Whole body line scanner
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