[go: up one dir, main page]

US3769484A - Apparatus and method for floating-zone melting of a semiconductor rod - Google Patents

Apparatus and method for floating-zone melting of a semiconductor rod Download PDF

Info

Publication number
US3769484A
US3769484A US00279482A US3769484DA US3769484A US 3769484 A US3769484 A US 3769484A US 00279482 A US00279482 A US 00279482A US 3769484D A US3769484D A US 3769484DA US 3769484 A US3769484 A US 3769484A
Authority
US
United States
Prior art keywords
capacitor
resonant circuit
treatment container
heating coil
semiconductor rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00279482A
Other languages
English (en)
Inventor
H Stut
W Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Application granted granted Critical
Publication of US3769484A publication Critical patent/US3769484A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/28—Tubular capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Definitions

  • ABSTRACT This invention provides a device for the floating-zone melting of a semiconductor rod.
  • the device comprises a treatment container having means to mount a semiconductor rod therein, a resonant circuit capacitor slidably mounted and sealed in an opening in a wall of the treatment container, said resonant circuit capacitor being a part of an electrical circuit resonantor, connecting wires extended from said resonant capacitor to a high frequency generator outside of the treatment container, and a single-wound induction heating coil movably mounted within said treatment container and arranged to be concentrically positioned around said semiconductor rod, said heating coil being connected at one end to the inner conductor of the resonant capacitor and at the other end to the outer conductor of said capacitor.
  • This invention relates to a method and device for the floating-zone melting of a semiconductor rod. More particularly, this invention relates to a device having a single-wound induction heating coil arranged in a treatment container to coaxially move with respect to a semiconductor rod mounted therein.
  • Such devices that are used for the floatingzone melting of a rod such as a semiconductor rod are disclosed and described in German Pat. DAS 1,188,043 and German Pat. DOS 1,444,530.
  • Such devices have a high frequency source which is arranged outside the treatment container in which the semiconductor rod is to be treated by zone melting and an induction heating coil which is also arranged inside the treatment container.
  • the heating coil generally is slidable in a parallel manner to the axis of the mounted semiconductor rod within the treatment container.
  • the connecting cable or wire from the heating coil is generally placed through an electrical passage in the wall of the treatment container for the electric connection between the high frequency generator and the induction heating coil, whereby the induction heating oil is connected at both ends to the high frequency generator through the same electrical passage.
  • the conneting electrical circuit i.e., the connecting cable and the passages as well as the induction heating coil, which is effective between the high frequency generator and the semiconductor rod, does not have an alternating current which is exclusively real. This is true because the electrical current which is induced by the effect of the electrical field of the induction heating coil in the semiconductor rod, contains a power component as well as a reactive component. However, due to the presence of the reactive component, the degree of efficiency of the heating is decreased. Thus, there is a need to reduce the reactive component as much as possible.
  • the present invention provides an improved device for the floating-zone melting of semiconductor rods which is e'fficient,'practical and effective.
  • a device which is designed to reduce the reactive component of the electrical current which is induced by the effect of the electrical field of the induction heating coil.
  • the present device includes a capacitor arranged in parallel to the heating coil to form an electrical resonant circuit. Since the reactive components of the current are primarily due to the induction coating of the supply lines between the high frequency generator and the induction heating coil, a reduction of the reactive impedance of the circuit as well as a reduction of the reactive component of the heating current which is induced in the treated rod is obtained by the parallel arrangement of the capacitor in the device.
  • the parallel capacitor is purposely arranged in proximity of the induction heating coil so that it is protected against the radiation of the hot melting zones which are necessary in melting the semiconductor rod. Also, the capacitance of the capacitor should be sufficiently high in order to compensate and overcome the reactive component of the electric current induced by the induction heating coil.
  • the supply line or connecting wires from the high frequency generator to the capacitor as well as the capacitor itself self-inductive in order to exert a certain influence on the characteristics of the electrical resonant circuit and to increase the entire inductance of the electrical resonant circuit.
  • the present device for the floating-zone melting of a semiconductor rod comprises a treatment container having means to mount therein a semi-conductor rod, a resonant circuit capacitor slidably mounted and sealed in an opening in a wall of the treatment container and forming a part of an electrical resonant circuit, connecting wires extending from the capacitor to a high frequency generator outside of said treatment container, and a single-wound induction heating coil movably mounted within said treatment container, said heating being arranged to be concentrically positioned around said rod within said treatment container and connected at one end to the inner con-ductor of the resonant capacitor and at the other end to the outer conductor of the capacitor.
  • a more specific object of the present invention is to provide a device for the floating-zone melting of a semiconductor in which the reactive component of the electric current induced by the heating coil in the semiconductor rod, is reduced to a minimum.
  • FIG. 1 there is schematically shown a device embodying the present invention.
  • the device generally referred to by the numeral 20, is primarily useful for the floating-zone melting of a rod such as a semiconductor rod 4.
  • the device includes a cylindrical treatment container 1 which has mounting means 2 and 3 for movably and rigidly mounting as desired, the semiconductor rod 4 within the treatment container.
  • the mountings 2 and 3 may be arranged to be axially shiftable with respect to each other.
  • a resonant circuit ca pacitor 5 which is slidably mounted but sealed within the opening 22.
  • the resonant capacitor is a rigid coaxial line which can be moved vertically upward and downward in a parallel manner with respect to the semiconductor rod 5 within the treatment container 1.
  • the resonant capacitor 5 is supported in the opening 22 at the passage point 17 through the bottom cover 24 of the treatment container l by respectively sealed passages 26 and 28 in such a way that the axial shifting of the resonant circuit capacitor 5 or vertical movement of the resonant circuit capacitor 5 at the passage point 17 is possible with out any outer air being admitted into the treatment container 1.
  • a vacuum within the treatment container there is provided in effect, a vacuum within the treatment container.
  • a single-wound induction heating coil 6 is connected to the resonant circuit capacitor 5 within the treatment container 1.
  • the induction heating coil 6 is arranged to be coaxially positioned around the semiconductor rod 4 and to be axially shifted with rerespect to the rod 4 which is to be treated.
  • the resonant circuit capacitor 5 may be merely a mounting or holder for the heating induction coil 6, although it is preferred to have the holding or mounting means for the heating coil 6 as a resonant circuit capacitor to provide an electrical resonant circuit as described hereinbelow.
  • the resonant capacitor 5 may only consist of an inner conductor 7, a tube-saped massive capacitor dielectric l3 and an outer conductor 8. Both the inner 7 and outer 8 conductors can be connected directly at their upper ends with the respective ends of the singlewound induction heating coil 6.
  • the resonant capacitor 5 is connected by means of a connecting line or coaxial cable 9 to a high frequency generator 10 located outside of the treatment container 1.
  • the connecting line 9 is preferably arranged as a coaxial cable.
  • the connecting line 9, however, is flexible whereas the resonant circuit capacitor 5 is rigid and solid.
  • the connecting line 9 can be made of a common dielectric plastic material such as polyethylene or polytetrafluoroethylene.
  • the relative capacitance per meter of the coaxial cable 9 made of such material is between about 30 and 100 picofarads. r
  • the frequency of the alternating current which is supplied by the high frequency generator 10 is adjusted to approximately 3 to 4 Mega-Hertz to provide the optimum heating effect. Because of the inductance of the heating coil which is provided in the case of the common high frequency connecting line 9, a resonant circuit capacitance of at least 20 nano-farads, and preferably between 30 and 40 nano-farads, would be needed'to effectively reduce the reactive components of the electrical current induced by the heating induction coil 6 in the semiconductor rod which is to be zone melted. This capacitance is obtained without the simultaneous increase of inductance of the heating coil.
  • the desired melting would be achieved so that the capacitance of such a coaxial cable would increase by the same factor whereby the relative inductance of the heating coil would not be affected or increased.
  • ceramics as the resonant capacitor dielectric such as a titanic oxide or magnesium titanic which are especially well suited as the capacitor dielectric.
  • the coaxial capacitor 5 as illustrated in FIG. 2 can be constructed by having an outer coaxial metal tube 14. This tube then will provide the metal protection of the capacitor since it can be slid in the same direction as the inner conductor 7 whereas the capacitor 5 itself can be rigidly arranged in this tube 14.
  • a further development of this type of capacitor can be'provided as disclosed in the German specification DOS 1,916,316.
  • a device for inductive floating-zone melting of rods with an induction heating coil which is arranged in a closed off treatment container for creating and heating the melting zone in the rods, to be treated. Th induction heating coil is connected by means of an electrical supply line with an energy source that is arranged outside the treatment container.
  • the part of the electrical supply line which is passed through the wall of the treatment container consists of several tube-shaped single conductors which are arranged in a coaxial way to each other.
  • the tube-shaped single conductors are divided into two groups in such a manner that each group consists of single conductors which are connected in parallel to each other and each single conductor includes only a single conductor of the other group.
  • the outer tube of these tube-shaped conductors forms with its adjacent conductor the resonant circuit capacitor which is fixed within the other tube-shaped capacitor coaxially by suitable means; for example, by means of a massive dielectric having a high dielectric constant.
  • the mounting 5 for the induction heating coil 6 is the resonant circuit capacitor that is concentrically positioned inthe interior of the cylindrical metal tube 14.,As shown in FIG. 2, the resonant circuit capacitor 5 is thus formed with a ceramic tube 13 having a large dielectric constant, and with a metal layer as the inner conductor 7 on the inner wall of the tube 13 and an insulating metal layer as the outer conductor 8 on the outer wall of the ceramic tube 13.
  • the metal tube 14 which surrounds the capacitor is designed as a container for water cooling means 14 and 15a. For this purpose the tube 14 is closed off at its upper and lower ends with the exception of the entries and exits for the cooling means and 15a. As shown in FIG.
  • this capacitor is permeated by the body of the actual resonant circuit capacitor in its entire length in such a way that the interior of the container consists of two eccentric chambers which are separatedfrom each other by the capacitor.
  • One of these chambers is located in the interior of the tube shaped capacitor member whereas the other chamber is enclosed on the outside by the tube 14 and on the inside by the tube shaped capacitor member.
  • Both chambers are provided with two connection pipes 16 and 16a for the respective cooling means 15 and 15a.
  • the cooling means reaches the inner chambers for instance by means of the lower termination or sealing ends 12 of the resonant capacitor 5 for the induction heating coil 6 from where it goes by means of the upper terminal 11 carrying the induction coil 6 by means of the outer chamber of the resonant capacitor 5.
  • the capacitor 5 is constructed so that the ceramic tube 13 insulates electrically the two parts of the metallic terminals 11 and 12 as well as the inner 7 and outer 8 conductors, in respect to each other.
  • the contacting of the conductors 7 and 8 of the capacitors is provided by means of the coaxial cable 9, as indicated above, whereby the cable 9 contacts electrically by means of the outer part of the lower terminal 12, the outer conductor 8, and by means of the inner part of the terminal 12, the inner conductor 7 of the resonant capacitor.
  • the inner conductor7 constitutes the electric connection to the inner part of the terminal 11 which together form one electrical connection with the induction coil 6, while the other electrical connection of the induction coil 6 is formed by the outer conductor 8 and possibly the metallic outer conductor tube 14 as well as the outer part of the terminal 11.
  • the inner and outer components of the terminals 11 and 12 may be connected with the capacitor member as well as with the metal tube 14, the induction coil 6 and the ends of the connecting cable 9 by selfsoldering.
  • the terminals, particularly terminal 11 may be sealed with a protective layer (not shown) consisting of heat resistor material such as silicon or polytetrafluoroethylene.
  • the treatment container 1 is preferably made of a stable material such as quartz.
  • the inner conductor 7 and the outer conductor 8 of the capacitor may for instance consist of silver which is burned onto the surface of the ceramic tube 13.
  • the passage or contact point 17 of the resonant capacitor 5 in the opening 22 of the bottom cover 24 of the treatment container 1, may be a gasket which can consist, for example, of several ring-shaped gaskets 29 (two shown) which are arranged in a stack and are tightly connected at the passage point with the cover 24 of the treatment container 1.
  • the spaces between the adjacent gaskets can be filled with a suitable liquid sealing means 30 which should be temperature resistant and as little as possible, volatile.
  • an improved device is provided for the effective floating-zone melting of a semiconductor rod in that it is constructed to substantially reduce the reactive component of the electric current induced by the heating coil 6 in the semiconductor rod.
  • a device for the floating-zone melting of a semiconductor rod which comprises:
  • a treatment container having means for mounting therein a semiconductor rod
  • a resonant circuit coaxial capacitor having an inner conductor means and an outer conductor means and slidably mounted and sealed in an opening in a wall of the treatment container;
  • a high frequency cable including connecting wires extended from said capacitor to a high frequency generator positioned outside of the treatment container, said wires connected to respective ones of said conductor means;
  • a wound induction heating coil movably mounted in said treatment container, said heating coil being arranged to be concentrically positioned around said semiconductor rod and connected at one end to the inner conductor means of the resonant capacitor and at the other end to the outer conductor means of said capacitor.
  • the resonant capacitor has a capacitance of at least 20 times as large as the capacitance of the connecting wires extended from the capacitor to the high frequency generator.
  • a device wherein the induction heating coil is mounted only on the resonant circuit capacitor.
  • a device wherein the resonant circuit capacitor is concentric with at least one other concentrically arranged metal tube.
  • a device wherein the dielectric constant of the massive dielectric of the resonant circuit capacitor is at least 10 times larger than the dielectric constant of the insulation of the connecting wires to the high frequency generator.
  • a device comprising a gasket in the wall of said treatment container, said outer conductor means of the resonant circuit capacitor passing through said gasket, said gasket consisting of several ring-shaped gaskets which are tightly and sealably connected with the wall of the treatment container whereby the spaces between said ring shaped gaskets are filled with an inert liquid sealant.
  • the dielectric of the resonant circuit capacitor consists of a ceramic having a high dielectric constant.
  • dielectric is composed of material selected from the group consisting of titanium dioxide and magnesium titanic.
  • the resonant circuit capacitor comprises a tube of insulating material having an inner conductor at its inner surface and an outer conductor at its outer surface, said inner and outer conductors being arranged in the form of two metal layers which are insulated with respect to each other.
  • a device herein the resonant circuit capacitor is enclosed in a metal tube which is closed off at both ends by terminals in a manner so that the inner space between the metal tube and capacitor is divided into two separate chambers which are in communication with each other by means of said induction heating coil.
  • a device wherein said chambers are arranged with one having an entry and the other an exit for the passage of a cooling means through said resonant circuit capacitor.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Induction Heating (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)
US00279482A 1971-08-17 1972-08-10 Apparatus and method for floating-zone melting of a semiconductor rod Expired - Lifetime US3769484A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2141188A DE2141188C3 (de) 1971-08-17 1971-08-17 Vorrichtung für das tiegellose Zonenschmelzen

Publications (1)

Publication Number Publication Date
US3769484A true US3769484A (en) 1973-10-30

Family

ID=5816983

Family Applications (1)

Application Number Title Priority Date Filing Date
US00279482A Expired - Lifetime US3769484A (en) 1971-08-17 1972-08-10 Apparatus and method for floating-zone melting of a semiconductor rod

Country Status (8)

Country Link
US (1) US3769484A (de)
JP (1) JPS5522439B2 (de)
BE (1) BE787668A (de)
DE (1) DE2141188C3 (de)
FR (1) FR2149483B1 (de)
GB (1) GB1349106A (de)
IT (1) IT963844B (de)
NL (1) NL7208496A (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110586A (en) * 1975-09-01 1978-08-29 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Manufacture of doped semiconductor rods
US4275035A (en) * 1977-01-11 1981-06-23 Leonhardt Maria R Apparatus for electrical feed of a heater in a crystal-growing vessel
US5124531A (en) * 1989-07-05 1992-06-23 Ngk Insulators, Ltd. Electric heater for heating a selected portion of workpiece and method of heating the workpiece by the heater
US20130112134A1 (en) * 2009-02-23 2013-05-09 Giga Industries, Inc. Method and Systems for Characterization and Production of High Quality Silicon
US20160233637A1 (en) * 2015-02-11 2016-08-11 Md Elektronik Gmbh Method and device for producing a cable and cable produced by the method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2425468C3 (de) * 1974-05-27 1979-01-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum tiegellosen Zonenschmelzen eines kristallisierbaren Stabes
JPS5290543A (en) * 1976-01-23 1977-07-29 Iwao Hishida Granular compositions of waxes
JPS6114114U (ja) * 1984-07-02 1986-01-27 マツダ株式会社 モ−ル取付用クリツプ

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2904663A (en) * 1957-11-15 1959-09-15 Siemens Ag Apparatus for zone melting of semiconductor material
US3339130A (en) * 1964-07-02 1967-08-29 Gen Motors Corp Capacitor means
US3484679A (en) * 1966-10-03 1969-12-16 North American Rockwell Electrical apparatus for changing the effective capacitance of a cable
US3671703A (en) * 1969-03-29 1972-06-20 Siemens Ag Device for crucible-free, floating zone melting a crystalline

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2904663A (en) * 1957-11-15 1959-09-15 Siemens Ag Apparatus for zone melting of semiconductor material
US3339130A (en) * 1964-07-02 1967-08-29 Gen Motors Corp Capacitor means
US3484679A (en) * 1966-10-03 1969-12-16 North American Rockwell Electrical apparatus for changing the effective capacitance of a cable
US3671703A (en) * 1969-03-29 1972-06-20 Siemens Ag Device for crucible-free, floating zone melting a crystalline

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4110586A (en) * 1975-09-01 1978-08-29 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Manufacture of doped semiconductor rods
US4275035A (en) * 1977-01-11 1981-06-23 Leonhardt Maria R Apparatus for electrical feed of a heater in a crystal-growing vessel
US5124531A (en) * 1989-07-05 1992-06-23 Ngk Insulators, Ltd. Electric heater for heating a selected portion of workpiece and method of heating the workpiece by the heater
US20130112134A1 (en) * 2009-02-23 2013-05-09 Giga Industries, Inc. Method and Systems for Characterization and Production of High Quality Silicon
US20160233637A1 (en) * 2015-02-11 2016-08-11 Md Elektronik Gmbh Method and device for producing a cable and cable produced by the method
US9997885B2 (en) * 2015-02-11 2018-06-12 Md Elektronik Gmbh Method and device for producing a cable and cable produced by the method

Also Published As

Publication number Publication date
DE2141188A1 (de) 1973-02-22
DE2141188C3 (de) 1979-09-13
IT963844B (it) 1974-01-21
FR2149483B1 (de) 1976-01-23
FR2149483A1 (de) 1973-03-30
BE787668A (fr) 1972-12-18
JPS5522439B2 (de) 1980-06-17
JPS4829607A (de) 1973-04-19
GB1349106A (en) 1974-03-27
NL7208496A (de) 1973-02-20
DE2141188B2 (de) 1979-01-11

Similar Documents

Publication Publication Date Title
US3769484A (en) Apparatus and method for floating-zone melting of a semiconductor rod
US2957064A (en) Stabilizing of levitation melting
US3764726A (en) Terminal for electrical apparatus with conductors cooled down to a low temperature
US932242A (en) Electrical production of heat for cooking and other purposes.
US2904663A (en) Apparatus for zone melting of semiconductor material
JPS63260828A (ja) ガラスを融解及び精製する方法
US3898413A (en) Induction heat coil arrangement
US3985947A (en) Device and method for crucible-free zone melting of crystallizable rods in particular semiconductor rods
US4538279A (en) Induction coil in the form of a pancake coil for crucible-free zone melting
US2908739A (en) Water cooled crucible for high frequency heating
US3935412A (en) Induction heated vapor source
US4625193A (en) Magnet lead assembly
US3363079A (en) Induction heating
US4579719A (en) Apparatus for crucible-free floating-zone melting a semiconductor rod, particularly of silicon
US2404404A (en) High-frequency apparatus
US4797596A (en) Filter apparatus for a magnetron
US2901714A (en) Transformer
US2978525A (en) Magnetic field coil for concentrating the arc in a vacuum arc furnace
US3644151A (en) Method and device for crucible-free zone melting a crystalline rod
US4506132A (en) Induction coil in the form of a flat coil for crucible-free floating zone melting
US3671703A (en) Device for crucible-free, floating zone melting a crystalline
US982587A (en) Apparatus for producing and utilizing electrical effluvia.
US3801769A (en) Induction coil for zone melting of semiconductor rods
CA1041177A (en) Cooled capacitor container for semiconductor melting device
US3862348A (en) Apparatus for crucible-free zone melting