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US3249404A - Continuous growth of crystalline materials - Google Patents

Continuous growth of crystalline materials Download PDF

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Publication number
US3249404A
US3249404A US259861A US25986163A US3249404A US 3249404 A US3249404 A US 3249404A US 259861 A US259861 A US 259861A US 25986163 A US25986163 A US 25986163A US 3249404 A US3249404 A US 3249404A
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United States
Prior art keywords
die
rod
bore
interface
charge
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Expired - Lifetime
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US259861A
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English (en)
Inventor
Donald C Bennett
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Merck and Co Inc
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Merck and Co Inc
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Publication date
Application filed by Merck and Co Inc filed Critical Merck and Co Inc
Priority to US259861A priority Critical patent/US3249404A/en
Priority to GB6109/64A priority patent/GB1030053A/en
Priority to DE19641458155 priority patent/DE1458155A1/de
Priority to NL6401591A priority patent/NL6401591A/xx
Application granted granted Critical
Publication of US3249404A publication Critical patent/US3249404A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/002—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Definitions

  • This invention relates to an apparatus and process for the continuous growth of single and oligo crystalline materials, and more particularly, to an improved apparatus and process for the continuous casting of thermoelectric material in the form of elongated rods.
  • the shape of the liquid/solid interface is important.
  • the interface shape is concave into the liquid melt, there is a tendency for spurious nuclei to form on the liquid side of the interface at or near the confining wall. This results in the production of crystalline material that is unsatisfactory for many purposes.
  • the shape of this liquid/ solid interface is influenced largely by those thermal conditions which in the end determine the direction and rate of heat flow in the crystal-forming portions of the apparatus and in the crystalline material so formed.
  • This invention provides a ready and simple way to avoid, or at least substantially reduce, spurious nucleation at the walls of the chamber or die in which the crystalline material is formed. 4
  • Another important feature of this invention is that by controlling the liquid/solid interface shape in such ready and simple manner, crystalline rods having the desired grain size and crystal orientation can be made more readily than they can with the use of apparatus and processes heretofore known.
  • the invention is applied to the production of rods of crystalline thermoelectric material, it has been found that the resulting rods have good thermoelectric properties, including a superior figure of merit.
  • FIGURE 1 is a vertical cross sectional view of an apparatus embodying the invention for the continuous casting of thermoelectric material
  • FIGURE 2 is an enlarged view of the die portion and associated parts of the apparatus shown in FIGURE 1-;
  • FIGURE 3 is a view similar to FIGURE 2, but on smaller scale together with a temperature-location graph and certain generalized dimensions to assist in describing the operation of the apparatus in the casting of thermoelectric materials and
  • FIGURE 4 is a vertical cross sectional view of a multiple bore (i.e., 4-hole) die operationally similar to the single bore die shown in FIGURES 13.
  • thermoelectric rod 11 into the quenching pot or heat sink generally designatedlZ.
  • the furnace 10 includes a quartz cylinder 13 open at the bottom and closed at the top, except that near the top a small diameter inlet tube 14 projects laterally to enable the introduction of an appropriate gas at the top of the charge 15 in the cylinder 13.
  • the bottom of the quartz cylinder 13 rests on a horizontal plate 16, preferably of metal.
  • Around the wall of the quartz cylinder are wrapped the wires 17 of an electrical heater, which may have multiple circuits or heating elements at the lower end in order to providea greater concentration of 3,249,404 Patented May 3, 1966 heat input to the charge 15 in that region than at the upper portion of the charge.
  • Around the outside of the quartz cylinder 13 is thermal insulating material 18.
  • a gas feed tube 20 connects with the quartz inlet tube 14.
  • the open end of the quartz cylinder is closed by a die 21 having a bore 22 through which the molten charge 15 is withdrawn to form the rod 11.
  • the die 21 is supported upon the horizontal plate 16, where it rests in a pocket 19 formed around the top of a cylindrical opening 23 in the plate 16.
  • the bottom periphery of the die 21 is enlarged, as at 24 to form a shoulder abutting against the bottom edge of quartz cylinder 13.
  • annular ring 25 Covering the top surface of horizontal plate 16 is an annular ring 25 of thermal insulating material.
  • the inner edge 26 of this annular ring extends to the outer surface of the quartz cylinder 13.
  • Horizontal plate 16 is preferably cooled by the flow of coolant through metal pipes 27 secured, as by metallic areas 28 (applied by a Welding or soldering process), to the underside of the plate 16.
  • the quenching pot 12 is positioned beneath the furnace 10 so that the rod 11, after it is drawn out of the die 21 of the furnace, is quenched in the inert quenching medium 30, (preferably a liquid, such as oil) contained in the quenching pot.
  • This quenching pot includes a cylinder 31 open at each end, with an outwardly extending flange 32 at the .top by means of which the pot cylinder 31 is secured, with screws 33, to the underside of horizontal plate 15.
  • the bottom of the pot cylinder 31 has an outwardly extending flange 34 to which is secured, as by screws 35, a bottom plate 36 closing off the bottom of the quenching pot.
  • This bottom plate 36 has a relatively small center opening 37 through which the rod 11 passes out of the bottom of the quenching pot 12.
  • the bottom plate 36 has a downwardly extending hub 38 through which the opening 37 also extends, with a sealing sleeve 40, of suitable elastic material, having its upper portion tightly gripping the outside of the hub 38 and having its lower portion slidably gripping the rod 11.
  • the quenching liquid 30 is pumped into the quenching pot 12 through inlet pipe 41, and flows out through the overflow pipe 42.
  • the quenching liquid after it leaves the quenching pot, is cooled by suitable means (not shown) before it is pumped back into the quenching pot.
  • the quenching liquid 30 is preferably cooled while it is contained within the quenching pot 12, this being effected by circulation of a coolant through the helical coil 43 surrounding the rod 11 as it moves through the quenching pot 12.
  • the ends 44 and 45 of this coil 43 pass through suitable openings in the bottom plate 36.
  • the rod 11 extends downward to suitable means (not shown) that exerts a pull upon the rod of a suitable amount, and at a suitable rate, to cause the rod 11 to be formed in the die 21 from the material forming the charge 15.
  • the charge 15 may be any suitable mixture of substances which, upon heating to a molten state in the furnace 10, may be drawn through a suitable die at the bottom of the furnace to form the thermoelectric rod 11.
  • the charge 15 may be one producing an n-type thermoelectric rod having a high figure of merit, such as is disclosed in my US. application Serial Number 191,286 filed April 30, 1962.
  • the charge may be a composition of 40 parts bismuth, 56 parts tellurium and 4 parts selenium (the parts being by weight), with an excess of 0.0805 percent of iodine.
  • the alloy of the thermoelectric rod 11 produces thereby consists of about 93 mol percent Bi Te about 7 mol percent Bi Se with an excess of 0.0201 mol percent iodine.
  • thermoelectric rod when these crystals are in this orientation, the rod will possess a high figure of merit, which is one of the desired characteristics of a thermoelectric rod.
  • this crystal orientation is affected by the shape of the liquid-solid interface 50 between the liquid charge 15 above it and the solid rod 11 below it. More specifically, I have found that when the shape of this interface 50 is convex into the liquid melt, as illustrated, the grains of the alloys, particularly Bi Te in the resulting thermoelectric rod will be large and columnar with their basal plane parallel to the axis of the rod.
  • the shape ofthe interface 50' may be controlled by making the die 21 of thermally anisotropic material having a markedly lower thermal conductivity in the axial direction of the rod 11 than in the planes perpendicular to the axial direction of the rod 11.
  • the interface 50 has a convex shape in which the center of the interface is higher than the periphery of the interface. This is the interface shape which results in the most desirable grain size and orientation of the crystal structure of the thermoelectric rod 11.
  • FIGURE 2 in which the die 21 and its associated parts are shown on a larger scale.
  • the die 21 is made of material which is thermally anisotropic, with the thermal conductivity of the material in the direction of the axis of bore 22 in the die (i.e., in the direction indicated by the arrows adjacent the letter K markedly less than its thermal conductivity in planes perpendicular thereto (i.e., .in the directions indicated by the arrows adjacent the letter K).
  • the thermal conductivity K in the direction indicated by the arrows adjacent thereto is of the order of less than one percent of the thermal conductivity K in the planes perpendicular thereto, as indicated by the arrows adjacent the letter K42.
  • the thickness of the die 21 (i.e., the distance indicated as d in FIGURE 2) is preferably greater than the diameter of the bore 22 in the die, and usually of the order of about 1 /2 to 3 times. Most of the die is supported in the furnace 10 above the supporting plate 16.
  • the bore 22 in the die 21 is shown as tapered, with its smaller diameter at the top and its larger diameter, 22a, at the bottom.
  • the amount of the taper, when used, is usually relatively small, of the order of about
  • heater 17 maintains the charge in a molten state.
  • the lower portion of the heater 17 transmits heat to the upper portion of the die 21, which conducts it substantially horizontally, as indicated by the broken lines and arrows 52,. inwardly toward the bore of the die.
  • a minor portion of the heat from the heater 17 is transmitted downward through the die, as this is the direction in which the thermal conductivity of the die (K is considerably lower than the thermal conductivity of the die (K in the horizontal direction. Nevertheless, some heat is transmitted through the die to the lower portion of the die, but there it is directed toward the bore of the die rather than to the supporting plate 16, by virtue of the action of the annular rec ss 51.
  • the dissipation of the heat transmitted toward the core 22: of the die 21 is to the upper portion of the rod 11 (as indicated by the broken lines andarrows 52), down through the rod 11 (as indicated by the broken lines 53),"to Where the rod is positioned in the quenching pot 12, and from there out from the rod into the quenching pot (as indicated by the broken lines and arrows 54).
  • the resulting pattern of heat fiow in the die in which there is a concentration and converging of heat flow to the upper position of the wallof the bore 22 of the die, and from there to the material in the bore of the die, produces an interface 50, between liquid state of the material above the interface and the solid state of the material below it, that is convex upwardly, with the convexity being relatively small. This results in a minimum of nucleationof new grains along the wall of the bore just above the interface, so that there is little tendency for the molten liquid to solidify in small crystals.
  • the molten liquid tends to solidify into large in the rod so that their basal plane is parallel to the axis of the rod. Should the convexity of the interface 50 be large, this will tend to produce a misorientation of these crystals as they form, to the impairment of the desired thermoelectric characteristics of the rod 11.
  • a seed rod of the desired composition with its upper end tapered in conformity with the taper of bore 22 in die 21 is inserted up through the quenching pot 12 into the bore 22 to close off the bore, the die thus being in position on horizontal supporting plate 16.
  • the charge (in solid form) is then placed on top of the die 21. Conveniently the charge is a premix of the various'ingredients.
  • the quartz cylinder 13 and its associated heating wires 17 and exterior insulation 18 are then placed over the die 21 and the lower edge of the quartz cylinder rested upon supporting plate 16. The electrical heaters are energized, and in due time the charge becomes molten, and so also does the top part of the seed rod.
  • the starter rod is drawn slowly downward by the rod pulling means (not shown).
  • the molten charge 15 solidifies at the interface 50 to form the solid rod 11, and this rod passes downward through the quenching pot 12 and out the, bottom thereof.
  • Inert gas such as argon,'is introduced from gas feed tube 20 through tube 14 to the top of the charge under a small pressure. This not only prevents a vacuum from forming on the top of the charge in the quartz cylinder 13 as the charge moves out the bottom of the cylinder, but also assists to a small extent in expelling the charge through the bore of the die.
  • That the interface 50 is convex upwardly may be determined by examination of a section of the rod taken along a plane containing the longitudinal axis of the rod, the section being in the portion of the rod that was within the bore of the die when the apparatus was first started up, or was later stopped for some reason and then restarted. After etching and polishing the section, a photograph is taken of this portion of the section. The interface at the time the apparatus was started or restarted, will be indicated by the line drawn transversely across the rod joining the points where it is evident that there is an abrupt change in the grain structure of the rod.
  • FIGURE3 is a temperature-location graph of the temperatures experienced in the operation of an apparatus embodying this invention for the continuous casting of the bismuth telluride alloy referred to in this application.
  • the temperature of the molten charge was 740 C.
  • the temperature of the molten charge was 620 C.
  • the temperature was 480 C.
  • the temperature of the oil in the quenching pot 12 was 20 C.
  • die 21 was made of the thermally anisotropic material known as pyrographite.
  • pyrographite This is synthetic material which exhibits a high degree of anisotropy similar to that of natural graphite single crystals.
  • Pyrographite is made by deposition using the technique of pyrolizing or decomposing carbon-bearing gases. It is described in the May-June 1960 issue of Electronic Progress magazine, Volume IV, Numberfi and was obtained from the Raytheon Company, Lexington, Massachusetts, U.S.A.
  • the thermal conductivity, K in the plane of the die was 3.9 watts/ cm.
  • thermoelectric rod so prepared of approximately 4 mm. diameter, was from a charge having a composition of 40 parts bismuth, 56 parts tellurium and 4 parts selenium (the parts being weight), with an excess of 0.0805 percent of iodine.
  • the thermoelectric rod had a figure of merit of 2.9 l0 per degree K.
  • Another thermally anisotropic material which. may be used for die 21 is boron nitride deposited from a vapor phase onto the surface of a heated mandrel, to produce a highly oriented polycrystalline structure having a thermal conductivity, K in the plane of the die of 0.4 calorie per cm. per second per C. per centimeter at 100 C., while the thermal conductivity, K in the plane perpendicular to the die (i.e., in the direction of the axis of the die bore) is 0.004, in the same units as before.
  • This material is available from High Temperature Materials, Inc., of Brighton, Massachusetts, U.S.A., which sells it under the name Boralloy.
  • FIGURE 4 shows such a die, 121, generally similar to die 21 of FIGURES 1-3, but having four bores through which the illustrated rods 11a, 11b and 110 are drawn.
  • the fourth rod is not shown, as it was removed by the section along which the view of FIGURE 4 is necessary, as these are the same, or substantially the same, as those previously described for single bore die 21.
  • thermoelectric rods While the invention has been described in connection with the continuous casting of n-type thermoelectric rods, it may be also employed in the continuous casting of p-type thermoelectric rods and other single and oligo crystalline materials,
  • the invention has been described with the bottom surface of the die 21 of thermally anisotropic material displaced upwardly a distance d from the top surface of the quenching medium 30, this distance d may be effectively reduced in various ways, and thereby further increase the temperature gradient in the vicinity of the interface 50.
  • this distance d may be effectively reduced in various ways, and thereby further increase the temperature gradient in the vicinity of the interface 50.
  • the temperature gradient in the die 21 in the vicinity of the interface has been increased to around 1000 degrees centigrade per inch.
  • thermoelectric material in the form of elongated rods wherein the molten charge positioned in a heated chamber is withdrawn from the bottom of' the chamber through the bore of a rod-forming die having a longitudinal axis in the direction of travel of the material through the die, and wherein the resulting rod passes through a quenching pot positioned below the die
  • the rod-forming die is made of thermally anisotropic material positioned so that its thermal conductivity in the direction of the longitudinal axis of the bore of the die is markedly less than its thermal conductivity in planes perpendicular to said axis.
  • thermo conductivity of the die in the direction of the longitudinal axis of the bore of the die is of the order of two percent or less of the thermal conductivity of the die in planes perpendicular to said axis.
  • the die has a plurality of rod-forming bores arranged substantially uniformly around the periphery of the die, with the die having two annular recesses each extending upwardly from the bottom face a distance which is part of the thickness of the die, one of said annular recesses being positioned radially beyond the outer edges of the plurality of rod-forming bores and the other being positioned radially within the inner edges of the rod-forming bores of the die.
  • the apparatus includes a metallic plate that supports the heated chamber and rod-forming die, the plate having an opening therein through which the solid rod passes as it moves from the die to the quenching pot, and the plate also having a recess in its upper surface into which the bottom periphery of the die fits, thereby positioning the die relative toithe opening in said plate, said plate also having cooling .
  • said die having a recess extending upwardly between the wall of the die bore and the exterior side wall of the die, said recess extending upwardly from the bottom face of the die a distance at least sufficient to impede sig nificantly the flow of heat from the solid rod within the die toward said cooled metallic plate, thereby tending to direct the flow of heat down the solid rod toward the quenching pot.
  • the chamber includes a quartz cylinder into the lower portionof which fits the die, with the cylinder having ele'ctrical heating wire coiled around the outside of the cylinder down nearly to the bottom lip of the quartz cylinder but terminating a short distance above the bottom lip 8" of the cylinder, said upwardly extending recess in said die extending upwardly a distance sufiicient to terminate just below the level of the lowest coil of heating wire on the cylinder, so that said recess impedes significantly the flow of heat from the solid rod within the die toward the cooling means near the periphery of the plate that supports the cylinder and die, without significantly impeding the flow of heat from the lowest coil of the electrical heating wire toward the bore of the die.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US259861A 1963-02-20 1963-02-20 Continuous growth of crystalline materials Expired - Lifetime US3249404A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US259861A US3249404A (en) 1963-02-20 1963-02-20 Continuous growth of crystalline materials
GB6109/64A GB1030053A (en) 1963-02-20 1964-02-13 Continuous growth process
DE19641458155 DE1458155A1 (de) 1963-02-20 1964-02-20 Vorrichtung zum kontinuierlichen Strangziehen von vielkristallinem Material
NL6401591A NL6401591A (de) 1963-02-20 1964-02-20

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3393054A (en) * 1964-09-22 1968-07-16 Siemens Ag Pulling nozzle for oriented pulling of semiconductor crystals from a melt
US4108714A (en) * 1975-02-26 1978-08-22 Siemens Aktiengesellschaft Process for producing plate-shaped silicon bodies for solar cells
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
US4594128A (en) * 1984-03-16 1986-06-10 Cook Melvin S Liquid phase epitaxy
US4594126A (en) * 1983-09-12 1986-06-10 Cook Melvin S Growth of thin epitaxial films on moving substrates from flowing solutions
US4597823A (en) * 1983-09-12 1986-07-01 Cook Melvin S Rapid LPE crystal growth
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US20060210465A1 (en) * 2005-03-04 2006-09-21 The Morgan Crucible Company Plc Anisotropic material treatment heater tubes
GB2435261A (en) * 2005-03-04 2007-08-22 Morgan Crucible Co A material treatment heater tube with anisotropic thermal conduction properties
US20120292825A1 (en) * 2011-05-19 2012-11-22 Korea Institute Of Energy Research Apparatus for manufacturing silicon substrate for solar cell using continuous casting facilitating temperature control and method of manufacturing silicon substrate using the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2635373C2 (de) * 1975-08-08 1982-04-15 PCUK-Produits Chimiques Ugine Kuhlmann, 92400 Courbevoie, Hauts-de-Seine Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form

Citations (4)

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US2789639A (en) * 1950-09-09 1957-04-23 Lorentzen Hardware Mfg Corp Method useful in the manufacture of venetian blinds
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
US3002824A (en) * 1956-11-28 1961-10-03 Philips Corp Method and apparatus for the manufacture of crystalline semiconductors
US3124489A (en) * 1960-05-02 1964-03-10 Method of continuously growing thin strip crystals

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2789639A (en) * 1950-09-09 1957-04-23 Lorentzen Hardware Mfg Corp Method useful in the manufacture of venetian blinds
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
US3002824A (en) * 1956-11-28 1961-10-03 Philips Corp Method and apparatus for the manufacture of crystalline semiconductors
US3124489A (en) * 1960-05-02 1964-03-10 Method of continuously growing thin strip crystals

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3393054A (en) * 1964-09-22 1968-07-16 Siemens Ag Pulling nozzle for oriented pulling of semiconductor crystals from a melt
US4157373A (en) * 1972-04-26 1979-06-05 Rca Corporation Apparatus for the production of ribbon shaped crystals
US4167554A (en) * 1974-10-16 1979-09-11 Metals Research Limited Crystallization apparatus having floating die member with tapered aperture
US4108714A (en) * 1975-02-26 1978-08-22 Siemens Aktiengesellschaft Process for producing plate-shaped silicon bodies for solar cells
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
US4594126A (en) * 1983-09-12 1986-06-10 Cook Melvin S Growth of thin epitaxial films on moving substrates from flowing solutions
US4597823A (en) * 1983-09-12 1986-07-01 Cook Melvin S Rapid LPE crystal growth
US4594128A (en) * 1984-03-16 1986-06-10 Cook Melvin S Liquid phase epitaxy
US5993540A (en) * 1995-06-16 1999-11-30 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6153011A (en) * 1995-06-16 2000-11-28 Optoscint, Inc. Continuous crystal plate growth process and apparatus
US6800137B2 (en) 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
US6402840B1 (en) 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
US20060210465A1 (en) * 2005-03-04 2006-09-21 The Morgan Crucible Company Plc Anisotropic material treatment heater tubes
GB2435261A (en) * 2005-03-04 2007-08-22 Morgan Crucible Co A material treatment heater tube with anisotropic thermal conduction properties
US20120292825A1 (en) * 2011-05-19 2012-11-22 Korea Institute Of Energy Research Apparatus for manufacturing silicon substrate for solar cell using continuous casting facilitating temperature control and method of manufacturing silicon substrate using the same
US8968471B2 (en) * 2011-05-19 2015-03-03 Korea Institute Of Energy Research Apparatus for manufacturing silicon substrate for solar cell using continuous casting and having contacting solidification and stress relieving regions

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GB1030053A (en) 1966-05-18
DE1458155A1 (de) 1969-09-18
NL6401591A (de) 1964-08-21

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