US20230197746A1

US20230197746A1 - Image sensor

Info

Publication number: US20230197746A1
Application number: US18/066,656
Authority: US
Inventors: Minkwan KIM; Hyunchul Kim; JunHong KIM; KwangMin Lee; Beomsuk Lee; Insung JOE; Jinsun PYO
Original assignee: Samsung Electronics Co Ltd
Current assignee: Samsung Electronics Co Ltd
Priority date: 2021-12-17
Filing date: 2022-12-15
Publication date: 2023-06-22
Also published as: KR20230092262A; CN116266601A

Abstract

An image sensor includes a substrate having first and second surfaces opposing each other; photodiodes in the substrate; circuit and wiring structures below the first surface of the substrate; an insulating structure on the second surface of the substrate; a plurality of color filters on the insulating structure; and a grid structure on the insulating structure, wherein at least a portion of the grid structure is between adjacent color filters of, wherein the plurality of color filters include first and second color filters configured to selectively transmit light of different wavelength spectra associated with different colors, wherein the insulating structure includes a first and second regions having respective, different first and second thicknesses, and a boundary region between the first region and the second region that vertically overlaps the first color filter and is horizontally offset from a vertical central axis of the grid structure.

Description

CROSS-REFERENCE TO RELATED APPLICATION

This application claims benefit of priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2021-0181501 filed on Dec. 17, 2021 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety.

BACKGROUND

Some example embodiments of the present inventive concepts relate to image sensors.
An image sensor, capturing an image and converting the image into an electrical signal has been used in consumer electronic devices such as digital cameras, a camera for mobile phones and portable camcorders, and also in cameras mounted on vehicles, security devices, and robots. Since miniaturization and high resolution are required for such image sensors, various research has been conducted to satisfy the requirement.

SUMMARY

Some example embodiments of the present inventive concepts provide image sensors having increased sensitivity.
According to some example embodiments of the present inventive concepts, an image sensor includes a substrate having first and second surfaces opposing each other; photodiodes in the substrate; circuit and wiring structures below the first surface of the substrate; an insulating structure on the second surface of the substrate; a plurality of color filters on the insulating structure; and a grid structure on the insulating structure, wherein at least a portion of the grid structure is between adjacent color filters of the plurality of color filters, wherein the plurality of color filters include a first color filter and a second color filter configured to selectively transmit light of different wavelength spectra associated with different colors, wherein the insulating structure includes a first region having a first thickness, a second region having a second thickness different from the first thickness, and a boundary region between the first region and the second region that vertically overlaps the first color filter and is horizontally offset from a vertical central axis of the grid structure.
According to some example embodiments of the present inventive concepts, an image sensor includes a substrate having first and second surfaces opposing each other; photodiodes in the substrate; circuit and wiring structures below the first surface of the substrate; an insulating structure on the second surface of the substrate; and a plurality of color filters on the insulating structure, wherein the plurality of color filters include a first color filter and a second color filter configured to selectively transmit light of different wavelength spectra associated with different colors, wherein the insulating structure includes a sequential stack of a lower layer, an intermediate layer and an upper layer, wherein the lower layer has a substantially uniform thickness, wherein the upper layer has a substantially uniform thickness, and wherein the intermediate layer includes two or more regions having different thicknesses from each other.
According to some example embodiments of the present inventive concepts, an image sensor includes a substrate having first and second surfaces opposing each other; photodiodes in the substrate; a separation structure between the photodiodes in the substrate; circuit and wiring structures below the first surface of the substrate; an insulating structure on the second surface of the substrate; a plurality of color filters on the insulating structure; and a grid structure on the insulating structure, wherein at least a portion of the grid structure is between adjacent color filters of the plurality of color filters, wherein the portion of the grid structure vertically overlaps at least a portion of the separation structure, wherein the plurality of color filters include a blue color filter configured to selectively transmit blue light, a green color filter configured to selectively transmit green light, and a red color filter configured to selectively transmit red light, wherein the insulating structure includes a sequential stack of a lower layer, an intermediate layer and an upper layer, wherein the lower layer has a substantially uniform thickness, wherein the upper layer has a substantially uniform thickness, wherein the intermediate layer includes two or more regions having different thicknesses from each other, wherein a minimum thickness of a first portion of the insulating structure vertically overlapping the blue color filter is smaller than a maximum thickness of a second portion of the insulating structure vertically overlapping the red color filter, and wherein the lower surface of the grid structure is flat such that the lower surface of the grid structure at least partially defines a plane extending parallel to at least one of the first surface or the second surface of the substrate.

BRIEF DESCRIPTION OF DRAWINGS

The above and other aspects, features, and advantages of the present inventive concepts will be more clearly understood from the following detailed description, taken in combination with the accompanying drawings, in which:

FIG. 1 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 2 is a cross-sectional diagram illustrating an example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 3 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 4A is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 4B is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 4C is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 4D is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 5 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 6 is a cross-sectional diagram illustrating an example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 7 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 8A is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 8B is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 9A is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 9B is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 10 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 11 is a cross-sectional diagram illustrating an example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 12 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 13 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 14 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 15 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 16 is a cross-sectional diagram illustrating an example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 17 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 18A is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 18B is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 19 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 20 is a cross-sectional diagram illustrating an example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 21 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 22 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 23 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 24 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 25 is a cross-sectional diagram illustrating an example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 26 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 27 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 28 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 29 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 30 is a cross-sectional diagram illustrating an example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 31 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 32 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 33 is a cross-sectional diagram illustrating an example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 34 is a cross-sectional diagram illustrating a modified example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 35 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 36 is a cross-sectional diagram illustrating an example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 37 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 38 is a cross-sectional diagram illustrating an example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 39 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 40 is a cross-sectional diagram illustrating an example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 41 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 42 is a cross-sectional diagram illustrating an example of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 43 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 44 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIG. 45 is a diagram illustrating an image sensor according to some example embodiments of the present inventive concepts, viewed from above;

FIGS. 46 and 47 are graphs illustrating properties of an image sensor according to some example embodiments of the present inventive concepts;

FIG. 48 is a flowchart illustrating processes of a method of manufacturing an image sensor according to some example embodiments of the present inventive concepts;

FIGS. 49, 50A, 50B, and 50C are diagrams illustrating a method of manufacturing an image sensor according to some example embodiments of the present inventive concepts; and

FIGS. 51, 52A, 52B, and 52C are diagrams illustrating a method of manufacturing an image sensor according to some example embodiments of the present inventive concepts.

DETAILED DESCRIPTION

Hereinafter, some example embodiments of the present inventive concepts will be described as follows with reference to the accompanying drawings.
Hereinafter, terms such as ‘on,’ ‘upper portion,’ ‘upper surface,’ ‘below,’ ‘lower portion,’ ‘lower surface,’ ‘side surface,’ and the like can be understood as referring to the spatial relationship between elements, components, regions, layers, and/or sections, based on the orientation of those elements, components, regions, layers, and/or sections in the drawings, unless otherwise indicated.
In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like reference numerals designate like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present such that the element and the other element are isolated from direct contact with each other by one or more interposing spaces and/or structures. In contrast, when an element is referred to as being “directly on” another element, there are no intervening elements present such that the element and the other element are in direct contact with each other. As described herein, an element that is “on” another element may be above, beneath, and/or horizontally adjacent to the other element.
It will be understood that elements and/or properties thereof (e.g., structures, surfaces, directions, or the like), which may be referred to as being “perpendicular,” “parallel,” “coplanar,” or the like with regard to other elements and/or properties thereof (e.g., structures, surfaces, directions, or the like) may be “perpendicular,” “parallel,” “coplanar,” or the like or may be “substantially perpendicular,” “substantially parallel,” “substantially coplanar,” respectively, with regard to the other elements and/or properties thereof.
Elements and/or properties thereof (e.g., structures, surfaces, directions, or the like) that are “substantially perpendicular” with regard to other elements and/or properties thereof will be understood to be “perpendicular” with regard to the other elements and/or properties thereof within manufacturing tolerances and/or material tolerances and/or have a deviation in magnitude and/or angle from “perpendicular,” or the like with regard to the other elements and/or properties thereof that is equal to or less than 10% (e.g., a. tolerance of ±10%).
Elements and/or properties thereof (e.g., structures, surfaces, directions, or the like) that are “substantially parallel” with regard to other elements and/or properties thereof will be understood to be “parallel” with regard to the other elements and/or properties thereof within manufacturing tolerances and/or material tolerances and/or have a deviation in magnitude and/or angle from “parallel,” or the like with regard to the other elements and/or properties thereof that is equal to or less than 10% (e.g., a. tolerance of ±10%).
Elements and/or properties thereof (e.g., structures, surfaces, directions, or the like) that are “substantially coplanar” with regard to other elements and/or properties thereof will be understood to be “coplanar” with regard to the other elements and/or properties thereof within manufacturing tolerances and/or material tolerances and/or have a deviation in magnitude and/or angle from “coplanar,” or the like with regard to the other elements and/or properties thereof that is equal to or less than 10% (e.g., a. tolerance of ±10%).
It will be understood that elements and/or properties thereof may be recited herein as being “the same” or “equal” as other elements, and it will be further understood that elements and/or properties thereof recited herein as being “identical” to, “the same” as, or “equal” to other elements may be “identical” to, “the same” as, or “equal” to or “substantially identical” to, “substantially the same” as or “substantially equal” to the other elements and/or properties thereof. Elements and/or properties thereof that are “substantially identical” to, “substantially the same” as or “substantially equal” to other elements and/or properties thereof will be understood to include elements and/or properties thereof that are identical to, the same as, or equal to the other elements and/or properties thereof within manufacturing tolerances and/or material tolerances. Elements and/or properties thereof that are identical or substantially identical to and/or the same or substantially the same as other elements and/or properties thereof may be structurally the same or substantially the same, functionally the same or substantially the same, and/or compositionally the same or substantially the same.
It will be understood that elements and/or properties thereof described herein as being the “substantially” the same and/or identical encompasses elements and/or properties thereof that have a relative difference in magnitude that is equal to or less than 10%. Further, regardless of whether elements and/or properties thereof are modified as “substantially,” it will be understood that these elements and/or properties thereof should be construed as including a manufacturing or operational tolerance (e.g., ±10%) around the stated elements and/or properties thereof.
While the term “same,” “equal” or “identical” may be used in description of some example embodiments, it should be understood that some imprecisions may exist. Thus, when one element is referred to as being the same as another element, it should be understood that an element or a value is the same as another element within a desired manufacturing or operational tolerance range (e.g., ±10%).
When the terms “about” or “substantially” are used in this specification in connection with a numerical value, it is intended that the associated numerical value includes a manufacturing or operational tolerance (e.g., ±10%) around the stated numerical value. Moreover, when the words “about” and “substantially” are used in connection with geometric shapes, it is intended that precision of the geometric shape is not required but that latitude for the shape is within the scope of the disclosure. Further, regardless of whether numerical values or shapes are modified as “about” or “substantially,” it will be understood that these values and shapes should be construed as including a manufacturing or operational tolerance (e.g., ±10%) around the stated numerical values or shapes. When ranges are specified, the range includes all values therebetween such as increments of 0.1%.
As described herein, elements that are described to be in contact with other elements may be understood to be in “direct” contact with the other elements.
As described herein, an element that is described to be “spaced apart” from another element, in general and/or in a particular direction (e.g., vertically spaced apart, laterally spaced apart, etc.) may be understood to be isolated from direct contact with the other element, in general and/or in the particular direction (e.g., isolated from direct contact with the other element in a vertical direction, isolated from direct contact with the other element in a lateral or horizontal direction, etc.). Similarly, elements that are described to be “spaced apart” from each other, in general and/or in a particular direction (e.g., vertically spaced apart, laterally spaced apart, etc.) may be understood to be isolated from direct contact with each other, in general and/or in the particular direction (e.g., isolated from direct contact with each other in a vertical direction, isolated from direct contact with each other in a lateral or horizontal direction, etc.).
some example embodiments of an image sensor in some example embodiments will be described with reference to FIGS. 1 and 2 .
FIG. 1 is a diagram illustrating an image sensor according to some example embodiments, viewed from above. FIG. 2 is a cross-sectional diagram illustrating regions taken along lines Ia-Ia′ and IIa-IIa′ in FIG. 1 according to some example embodiments.
Referring to FIGS. 1 and 2 , an image sensor 1 a may include a first chip structure 3 and a second chip structure 103 on the first chip structure 3. The first chip structure 3 may be configured as a logic chip, and the second chip structure 103 may be configured as an image sensor chip. In some example embodiments, the first chip structure 3 may be configured as a stack chip structure including a logic chip and a memory chip.
The first chip structure 3 of the image sensor 1 a may include a first substrate 6, a device isolation layer 9 s defining an active region 9 a on the first substrate 6, a first circuit device 12 and a first wiring structure 15 on the first substrate 6, and a first insulating layer 18 covering the first circuit device 12 and the first wiring structure 15 covering the first substrate 6.
The first substrate 6 may be a semiconductor substrate. For example, the first substrate 6 may be a substrate formed of a semiconductor material, such as, for example, a single crystal silicon substrate. The first circuit device 12 may include a device such as a transistor including a gate 12 a and a source/drain 12 b.
The second chip structure 103 may include a second substrate 106 having a first surface 106 s 1 and a second surface 106 s 2 opposing each other, a device isolation layer 118 disposed on the first surface 106 s 1 of the second substrate 106 and defining an active region, a second circuit device 124 disposed between the first surface 106 s 1 of the second substrate 106 and the first chip structure 3, and a second insulating layer 130 covering the second circuit device 124 and the second wiring structure 127 between the first surface 106 s 1 of the second substrate 106 and the first chip structure 3. A first surface 106 s 1 of the second substrate 106 may oppose the first chip structure 3. The first circuit device 12, the first wiring structure 15, the second circuit device 124 and the second wiring structure 127 may be circuit and wiring structures. Accordingly, the image sensor 1 may be include the circuit and wiring structures 12, 15, 124 and 127 disposed below the first surface 106 s 1 of the second substrate 106.
The second substrate 106 may be a semiconductor substrate. For example, the second substrate 106 may be a substrate formed of a semiconductor material, such as, for example, a single crystal silicon substrate.
The image sensor 1 a may further include photoelectric conversion devices PD. The photoelectric conversion devices PD may generate and accumulate electric charges corresponding to incident light. For example, the photoelectric conversion devices PD may include a photodiode, a phototransistor, a photogate, a pinned photodiode (PPD), and combinations thereof.
The photoelectric conversion devices PD may be formed in the second substrate 106 and may be spaced apart from each other.
The second chip structure 103 may further include a separation structure 115. The separation structure 115 may be disposed to surround each of the photoelectric conversion devices PD. The separation structure 115 may be disposed in the opening 112 penetrating through the second substrate 106.
The separation structure 115 may penetrate through the second substrate 106. The opening 112 may be connected to the device isolation layer 118. Accordingly, the separation structure 115 may be connected to the device isolation layer 118. The device isolation layer 118 may be formed of an insulating material such as silicon oxide. The separation structure 115 may include a separation pattern 115 b and a separation insulating layer 115 a covering a side surface of the separation pattern 115 b. For example, the separation insulating layer 115 a may include silicon oxide, and the separation pattern 115 b may include polysilicon.
The second circuit device 124 may include a transfer gate TG and active elements 121. The active elements 121 may be configured as transistors including a gate 121 a and a source/drain 121 b. The transfer gate TG may transfer electric charges from an adjacent photoelectric conversion device PD to an adjacent floating diffusion region, and the active elements 121 may be configured as at least one of a source-follower transistor, a reset transistor, and a select transistor.
The transfer gate TG may be configured as a vertical transfer gate including a portion extending into the second substrate 106 from the first surface 106 s 1 of the second substrate 106.
The second wiring structure 127 may include a plurality of layers of interconnection lines disposed on different levels, and vias electrically connecting the plurality of layers of the interconnection lines to each other and electrically connecting the plurality of layers of the interconnection lines to the second circuit device 124.
The first insulating layer 18 and the second insulating layer 130 may be in contact with and bonded to each other. Each of the first and second insulating layers 18 and 130 may be formed as a plurality of layers including different types of insulating layers. For example, the second insulating layer 130 may be formed as a multilayer including at least two types or more of a silicon oxide layer, a low dielectric layer, and a silicon nitride layer.
The second chip structure 103 may further include an insulating structure 132 a disposed on the second surface 106 s 2 of the second substrate 106. The insulating structure 132 a may cover the separation structure 115.
The second chip structure 103 may include the grid structure 160. The grid structure 160 may be disposed on the insulating structure 132 a.
The grid structure 160 may include a first layer 162 a and a second layer 162 b stacked in sequence. It will be understood that elements herein described to be “stacked in sequence” may be referred to as a “sequential stack” of said elements. The first layer 162 a may be in contact with the insulating structure 132. A thickness of the second layer 162 b may be greater than a thickness of the first layer 162 a. As described herein, a “thickness” of a layer may refer to a thickness of the layer in the Z direction perpendicular to the first surface 106 s 1 and/or second surface 106 s 2 of the substrate 106.
The first layer 162 a may include a first material, and the second layer 162 b may include a second material different from the first material.
In some example embodiments, the first material of the first layer 162 a may include a conductive material. For example, the first layer 162 a may be formed of a conductive material including at least one of a metal or a metal nitride. For example, the first layer 162 a may include at least one of Ti, Ta, TiN, TaN, and W.
In some example embodiments, the second material of the second layer 162 b may include an insulating material. The second material of the second layer 162 b may be configured as a low refractive index (LRI) material. For example, a refractive index of the second layer 162 b may be in a range of about 1.1 to about 1.8. The second layer 162 b may include an oxide or nitride including Si, Al, or a combination thereof. For example, the second layer 162 b may include silicon oxide having a porous structure or silica nanoparticles having a network structure.
The first layer 162 a formed of a conductive material may work as a charge path for removing charges, and the second layer 162 b may not include a conductive material reducing sensitivity in pixel regions and may be formed of a low refractive index (LRI) material, such that an optical cross-talk phenomenon of the image sensor 1 a may be addressed.
The second chip structure 103 may further include the color filters 170 including first to third color filters 170 a, 170 b, and 170 c. The color filters 170 may include first color filters 170 a of a first color, second color filters 170 b of a second color different from the first color, and third color filters 170 c of a third color different from the first and second colors. For example, the first color filters 170 a may be blue color filters, the second color filters 170 b may be green color filters, and the third color filters 170 c may be red color filters.
As described herein, each color filter that is described to be or have a particular “color” may be interchangeably referred to as being configured to selectively transmit light of a particular wavelength spectrum associated with the particular color (e.g., red light, blue light, green light, or the like), which may further be interchangeably referred to as selectively transmitting the particular color (e.g., selectively transmitting a red color, a blue color, a green color, or the like). For example, as described herein, a blue color filter may be understood to be configured to selectively transmit light of a blue wavelength spectrum (e.g., blue light) and thus may be understood to be configured to selectively transmit a blue color, a green color filter may be understood to be configured to selectively transmit light of a green wavelength spectrum (e.g., green light) and thus may be understood to be configured to selectively transmit a green color, and a red color filter may be understood to be configured to selectively transmit light of a red wavelength spectrum (e.g., red light) and thus may be understood to be configured to selectively transmit a red color. Additionally, color filters described herein to have different colors from each other may be understood to be configured to selectively transmit light of different wavelength spectra associated with different colors, also referred to as being configured to selectively transmit different colors. For example, a first color filter 170 a and a second color filter 170 b may be configured to selectively transmit light of different wavelength spectra associated with different colors (e.g., blue and green light, respectively), and a third color filter 170 c may be configured to selectively transmit a wavelength spectrum of light that is different from wavelength spectra of light selectively transmitted by either of the first color filter 170 a or the second color filter 170 b (e.g., red light).
The color filters 170 may be disposed on the insulating structure 132 a. The color filters 170 may allow light of a specific wavelength to pass and to reach the photoelectric conversion devices PD. For example, the color filters 170 may be formed of a material in which a pigment including a metal or a metal oxide is mixed with a resin. A thickness of each of the color filters 170 may be greater than a thickness of the grid structure 160. The color filters 170 may cover the grid structure 160 on the insulating structure 132 a. The color filters 170 may cover side surfaces and upper surfaces of the grid structure 160 on the insulating structure 132 a.
As shown, in some example embodiments, at least a portion of the grid structure 160 may be between adjacent color filters of the among the first to third color filters 170 a, 170 b, and 170 c. In some example embodiments, the grid structure 160 may be disposed between filters of different colors among the first to third color filters 170 a, 170 b, and 170 c.
In some example embodiments, the grid structure 160 may vertically overlap the separation structure 115. As described herein, elements that “vertically overlap” other elements may be understood to vertically overlap the other elements, for example, in the Z direction perpendicular to the first surface 106 s 1 and/or second surface 106 s 2 of the second substrate 106.
In some example embodiments, the grid structure 160 may have a width different from that of the separation structure 115. For example, a width of the grid structure 160 may be greater than a width of the separation structure 115.
The second chip structure 103 may further include microlenses 180 on the color filters 170. The microlenses 180 may overlap the photoelectric conversion devices PD, respectively. Each of the microlenses 180 may have a curved shape, curved in a direction away from the first chip structure 3. The microlenses 180 may condense incident light into the photoelectric conversion devices PD. The microlenses 180 may be formed of a transparent photoresist material or a transparent thermosetting resin material. For example, the microlenses 180 may be formed of a TMR-based resin (manufactured by Tokyo Ohka Kogo, Co.) or an MFR-based resin (manufactured by Japan Synthetic Rubber Corporation), but some example embodiments thereof is not limited thereto.
The insulating structure 132 a may include an anti-reflective layer which may reduce or prevent reflection of light caused by a sudden change in refractive index on the second surface 106 s 2 of the second substrate 106, which may be formed of silicon. For example, the insulating structure 132 a may include a plurality of layers stacked in sequence. The insulating structure 132 a may include an anti-reflective layer which may provide incident light to travel to the photoelectric conversion devices PD with high transmittance by adjusting a refractive index. For example, the insulating structure 132 a may include at least three layers. Accordingly, the insulating structure 132 a may be referred to as an anti-reflective structure.
In some example embodiments, the insulating structure 132 a may include a lower layer 134, an intermediate layer 136 a and 142 a on the lower layer 134, and an upper layer 148 on the intermediate layer 136 a and 142 a.
The lower layer 134 may be in contact with the second surface 106 s 2 of the second substrate 106. The lower layer 134 may have transmittance in a visible wavelength, and may include a material exhibiting a negative charge for reducing or preventing charges by a dangling bond of the second surface 106 s 2 of the second substrate 106. The intermediate layers 136 a and 142 a may have transmittance in a visible wavelength, and may including a material which may adjust a peak of transmittance by adjusting a thickness. The upper layer 148 may have transmittance in a visible wavelength, and may include a material passivating the intermediate layers 136 a and 142 a.
The lower layer 134 may include a material having a first refractive index, such as, for example, a material having a refractive index of about 2, the intermediate layers 136 a and 142 a may include a material having a second refractive index smaller than the first refractive index, such as, for example, a material having a refractive index of about 1.5, and the upper layer 148 may include a material having a refractive index greater than the second refractive index, such as, for example a material having a refractive index of about 2.
The lower layer 134 may include a high-κ dielectric, such as, for example, aluminum oxide.
The intermediate layers 136 a and 142 a may include a first intermediate layer 136 a and a second intermediate layer 142 a stacked in sequence.
The first intermediate layer 136 a may include a material different from the material of the lower layer 134 and the material of the second intermediate layer 142 a. For example, the first intermediate layer 136 a may include a high-κ material different from that of the lower layer 134. For example, the first intermediate layer 136 a may include hafnium oxide. The second intermediate layer 142 a may include silicon oxide.
A thickness of the first intermediate layer 136 a may be greater than a thickness of the lower layer 134.
The upper layer 148 may include at least one material layer. The upper layer 148 may include at least two layers. For example, the upper layer 148 may include a first upper layer 150 a and a second upper layer 150 b stacked in sequence. For example, in the upper layer 148, the first upper layer 150 a may include a hafnium oxide layer, and the second upper layer 150 b may include an aluminum oxide layer.
The first upper layer 150 a of the upper layer 148 may be formed of the same material as that of the first intermediate layer 136 a, such as, for example, hafnium oxide. The second upper layer 150 b of the upper layer 148 may be formed of the same material as that of the lower layer 134, such as, for example, aluminum oxide. The second upper layer 150 b of the upper layer 148 may have substantially the same thickness as that of the lower layer 134. The second upper layer 150 b of the upper layer 148 may be in contact with the color filters 170 and the grid structure 160.
The insulating structure 132 a may include a first region 132A having a first thickness and a second region 132B having a second thickness different from the first thickness. The second thickness may be greater than the first thickness.
In the second region 132B of the insulating structure 132 a, the second intermediate layer 142 a may include a first layer 144 a and a second layer 144 b stacked in sequence, and, in the first region 132A of the insulating structure 132 a, the second intermediate layer 142 a may include the second layer 144 b. Accordingly, the second intermediate layer 142 a may include a relatively thick portion including the first and second layers 144 a and 144 b and a relatively thin portion including the second layer 144 b. According to the thickness difference depending on the position of the second intermediate layer 142 a, there may be a difference in thickness between the first and second regions 132A and 132B of the insulating structure 132 a.
In the second intermediate layer 142 a, the first layer 144 a and the second layer 144 b may be formed of the same material, such as, for example, silicon oxide.
In the second intermediate layer 142 a, a maximum thickness portion, such as, for example, the thickness of the thick portion including the first and second layers 144 a and 144 b, may be greater than a thickness of the lower layer 134.
In the second intermediate layer 142 a, a maximum thickness portion, such as, for example, the thickness of the thick portion including the first and second layers 144 a and 144 b, may be greater than a thickness of the first intermediate layer 136 a.
In the second intermediate layer 142 a, a minimum thickness portion, such as, for example, the thickness of the thin portion including the second layer 144 b, may be greater than a thickness of the lower layer 134.
In the second intermediate layer 142 a, a minimum thickness portion, such as, for example, a thickness of the thin portion including the second layer 144 b may be different from a thickness of the first intermediate layer 136 a. In some example embodiments, in the second intermediate layer 142 a, a minimum thickness portion, such as, for example, the thin portion including the second layer 144 b may be smaller than a thickness of the first intermediate layer 136 a. In some example embodiments, in the second intermediate layer 142 a, a minimum thickness portion, such as, for example, a thickness of the thin portion including the second layer 144 b may be greater than a thickness of the first intermediate layer 136 a.
The grid structure 160 may be disposed on the second region 132B of the insulating structure 132 a. The grid structure 160 may be in contact with the second region 132B of the insulating structure 132 a and may be spaced apart from the first region 132A of the insulating structure 132 a. Accordingly, the lower surface of the grid structure 160 may be disposed on a constant level when viewed with respect to the second surface 106 s 2 of the second substrate 106. That is, the lower surface of the grid structure 160 may be flat (e.g., may at least partially define and/or be coplanar with a plane that is parallel to the first surface 106 s 1 and/or second surface 106 s 2 of the second substrate 106.
The second region 132B of the insulating structure 132 a may be in contact with the second and third color filters 170 b and 170 c, and may be in contact with an edge portion of each of the first color filters 170 a. A central portion of each of the first color filters 170 a may be in contact with the first region 132A of the insulating structure 132 a. In each of the first color filters 170 a, the edge portion may have a shape surrounding the center portion.
The second region 132B of the insulating structure 132 a may vertically overlap an edge portion of each of the first color filters 170 a, the second and third color filters 170 b and 170 c, and the grid structure 160, and the first region 132A of the insulating structure 132 a may vertically overlap a central portion of each of the first color filters 170 a.
In the insulating structure 132 a, a region in which the thickness changes, that is, a boundary region 132 br between the first region 132A and the second region 132B, may vertically overlap the first color filters 170 a, may be spaced apart from side surfaces of the first color filters 170 a, and may be spaced apart from the grid structure 160. In the insulating structure 132 a, the boundary region 132 br between the first region 132A and the second region 132B may vertically overlap (e.g., overlap in the Z direction perpendicular to the first surface 106 s 1 and/or second surface 106 s 2 of the second substrate 106 at least a portion of the first color filter 170 a, and may be misaligned with the vertical central axis of the grid structure 160 (e.g., horizontally offset, for example in the X direction and/or Y direction parallel to the first surface 106 s 1 and/or second surface 106 s 2 of the second substrate 106 from a vertical central axis 160 c of the grid structure 160 which extends vertically (e.g., in the Z direction), for example through a center of an opening 160 o defined by opposing surfaces 160 s of the grid structure 160.
In the diagram viewed from above, the boundary region 132 br between the first region 132A and the second region 132B may be described as a boundary region between a center portion and an edge portion in each of the first color filters 170 a.
In each of the first color filters 170 a, a lower surface of the center portion may be disposed on a level lower than a level of a lower surface of the edge portion. A lower surface of the edge portion of each of the first color filters 170 a, lower surfaces of the second color filters 170 b, lower surfaces of the third color filters 170 c, and lower surfaces of the grid structure 160 may be disposed on substantially the same level.
The image sensor 1 a including the above-described insulating structure 132 a may improve or optimize transmittance of light transmitting the first color filters, that is, the blue color filter 170 a and the second color filters, that is, the green color filter 170 b. Accordingly, in the image sensor 1 a including the above-described insulating structure 132 a, by improving transmittance of light transmitting the insulating structure 132 a through the first color filters, that is, the blue color filter 170 a and the second color filters, that is, the green color filter 170 b, sensitivity of the image sensor 1 a may improve.
In the description below, a modified example of the insulating structure 132 a will be described with reference to FIG. 3 . Hereinafter, a modified example of the insulating structure 132 a will be mainly described with respect to a modified component or a replaced component.
FIG. 3 is a cross-sectional diagram illustrating regions taken along lines Ia-Ia′ and IIa-IIa′ in FIG. 1 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIGS. 1 and 3 , the insulating structure 132 b as illustrated in FIG. 3 , which may replace the insulating structure 132 a in FIG. 2 , may include a lower layer 134, intermediate layers 136 b and 142 b, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 . The intermediate layers 136 b and 142 b may include a first intermediate layer 136 b and a second intermediate layer 142 b stacked in sequence. The first intermediate layer 136 b may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 142 b may include silicon oxide.
The insulating structure 132 b may include the first region 132A having a first thickness and the second region 132B having a second thickness greater than the first thickness, as described with reference to FIG. 2 .
In the second region 132B of the insulating structure 132 b, the first intermediate layer 136 b may include a first layer 138 a and a second layer 138 b stacked in sequence, and in the first region 132A of the insulating structure 132 b, the first intermediate layer 136 b may include the second layer 138 b.
In some example embodiments, the first layer 138 a and the second layer 138 b of the first intermediate layer 136 b may include the same material, such as, for example, hafnium oxide. In some example embodiments, the first layer 138 a and the second layer 138 b of the first intermediate layer 136 b may be formed of different materials.
The first intermediate layer 136 b may include a relatively thick portion including the first and second layers 138 a and 138 b and a relatively thin portion including the second layer 138 b. According to the thickness difference depending on the position of the first intermediate layer 136 b, there may be a difference in thickness between the first and second regions 132A and 132B of the insulating structure 132 b.
In some example embodiments, the image sensor 1 a may include the insulating structure 132 a in which the thicknesses of the first and second regions 132A and 132B change according to a change in the thickness of the second intermediate layer 142 a as described with reference to FIG. 2 , or the insulating structure 132 b in which the thicknesses of the first and second regions 132A and 132B changes according to a change in the thickness of the first intermediate layer 136 b as described with reference to FIG. 3 . Accordingly, the image sensor 1 a may include the insulating structure (132 a in FIG. 2 or 132 b in FIG. 3 ) having a thickness optimized according to wavelengths of the first and second color filters 170 a and 170 b. Accordingly, by improving transmittance of light passing through the insulating structure (132 a in FIG. 2 or 132 b in FIG. 3 ) through the first and second color filters 170 a and 170 b, sensitivity of the image sensor 1 a may improve.
The separation structure 115 described with reference to FIGS. 2 and 3 may be disposed in an opening 112 that is at least partially defined by one or more inner sidewall surfaces 106 si of the second substrate 106 such that the opening 112 is penetrating through in a direction from the first surface 106 s 1 to the second surface 106 s 2 of the second substrate 106, but some example embodiments thereof is not limited thereto. Also, the insulating structure (132 a in FIG. 2 or 132 b in FIG. 3 ) described with reference to FIGS. 2 and 3 may be modified to extend into the second substrate 106. Hereinafter, various modified examples of the separation structure 115 and the insulating structure (132 a in FIGS. 2 and 132 b in FIG. 3 ) will be described with reference to FIGS. 4A to 4D.
FIGS. 4A to 4D are cross-sectional diagrams illustrating regions taken along lines Ia-Ia′ and IIa-IIa′ in FIG. 1 , illustrating various modified examples of the image sensor according to some example embodiments.
Referring to FIGS. 1 and 4A, the separation structure 115 (in FIG. 2 ) in FIG. 2 may be modified to form the separation structure 115′ in FIG. 4A. The separation structure 115′ may be disposed in an opening 112′ that is at least partially defined by one or more inner sidewall surfaces 106 si of the second substrate 106 such that the opening 112′ is extending in a direction from the second surface 106 s 2 to the first surface 106 s 1 of the second substrate 106.
The separation structure 115′ may be spaced apart from the device isolation layer 118. The separation structure 115′ may extend in a direction from the second surface 106 s 2 of the second substrate 106 toward the first surface 106 s 1, and an end of the separation structure 115′ may be disposed in the second substrate 106.
The insulating structure 132 a (in FIG. 2 ) including the first and second regions 132A and 132B having different thicknesses described with reference to FIG. 2 may be modified to be an insulating structure 132 ca including has at least one material layer extending into the opening 112′. For example, at least a portion of the insulating structure 132 a in FIG. 2 described with reference to FIG. 2 may extend into the opening 112′ and may form the separation structure 115′. For example, the separation structure 115′ may include a first layer 116 a′ and a second layer 116 b′ covering an internal wall of the opening 112′ in sequence, and a third layer 116 c′ filling the opening 112′ on the second layer 116 b′, and the first to third layers 116 a′, 116 b′, and 116 c′ may extend from at least a portion of the insulating structure 132 ca.
In some example embodiments, the insulating structure 132 ca may include a lower layer 134′, intermediate layers 136 a′ and 142 a′, and an upper layer 148 stacked in sequence. The intermediate layers 136 a′ and 142 a′ may include a first intermediate layer 136 a′ and a second intermediate layer 142 a′ stacked in sequence. The second intermediate layer 142 a′ may include a first layer 144 a′ and a second layer 144 b′ stacked in sequence.
The lower layer 134′, the intermediate layers 136 a′ and 142 a′ and the upper layer 148 of the insulating structure 132 ca may correspond to the lower layer 134, the intermediate layers 136 a and 142 a, and the upper layer 148 of the insulating structure 132 a, respectively, described with reference to FIG. 2 , and may be formed of the same material as those of the lower layer 134, the intermediate layers 136 a and 142 a, and the upper layer 148 of the insulating structure 132 a.
The lower layer 134′ may extend into the opening 112′ and may be included in the first layer 116 a′ of the separation structure 115′, a portion of the intermediate layers 136 a′ and 142 a′, such as, for example, the first intermediate layer 136 a′, may extend into the opening 112′ and may be included in the second layer 116 b′ of the separation structure 115′, and the first layer 144 a′ of the second intermediate layer 142 a′ may be included in the third layer 116 c′ of the separation structure 115′.
The insulating structure 132 ca may include the first and second regions 132A and 132B having different thicknesses as described with reference to FIG. 2 on the second surface 106 s 2 of the second substrate 106.
Thereafter, referring to FIGS. 1 and 4B, the separation structure 115 (in FIG. 3 ) may be modified to form a separation structure 115″ as in FIG. 4B. The separation structure 115″ may be disposed in the opening 112′ extending in a direction from the second surface 106 s 2 of the second substrate 106 toward the first surface 106 s 1, described with reference to FIG. 4A.
The insulating structure 132 b (in FIG. 3 ) described with reference to FIG. 3 may be modified to form an insulating structure 132 cb including at least one material layer extending into the opening 112′. For example, at least a portion of the insulating structure 132 b (in FIG. 3 ) described with reference to FIG. 3 may extend into the opening 112′ and may form the separation structure 115″. For example, the separation structure 115″ may include a first layer 116 a″, a second layer 116 b″, a third layer 116 c″, and a fourth layer 116 d″ covering the internal wall of the opening 112′ in sequence, and the first to fourth layers 116 a″, 116 b″, 116 c″, and 116 d″ may extend from at least a portion of the insulating structure 132 cb.
In some example embodiments, the insulating structure 132 cb may include a lower layer 134′, intermediate layers 136 b′ and 142 b′, and an upper layer 148 stacked in sequence. The intermediate layers 136 b′ and 142 b′ may include a first intermediate layer 136 b′ and a second intermediate layer 142 b′ stacked in sequence. The first intermediate layer 136 b′ may include a first layer 138 a′ and a second layer 138 b′ stacked in sequence.
The lower layer 134′, the intermediate layers 136 b′ and 142 b′ and the upper layer 148 of the insulating structure 132 cb may correspond to the lower layer 134, the intermediate layers 136 b and 142 b, and the upper layer 148 of the insulating structure 132 b, respectively, described with reference to FIG. 3 , and may be formed of the same material as those of the lower layer 134, the intermediate layers 136 a and 142 a, and the upper layer 148 of the insulating structure 132 a.
The lower layer 134′ may extend into the opening 112′ and may be included in the first layer 116 a″ of the separation structure 115″, and in the intermediate layers 136 b′ and 142 b′, the first layer 138 a′ and the second layer 138 b′ of the first intermediate layer 136 b′ may extend into the opening 112′ and may be included in the second layer 116 b″ and the third layer 116 c″ of the separation structure 115″, and the second intermediate layer 142 b′ may extend into the opening 112′ and may be included in the fourth layer 116 d″ of the separation structure 115″.
The insulating structure 132 cb may include the first and second regions 132A and 132B having different thicknesses as described with reference to FIG. 3 on the second surface 106 s 2 of the second substrate 106.
In FIGS. 2, 3, 4A and 4B, the second surface 106 s 2 of the second substrate 106 may be substantially planar, but some example embodiments thereof is not limited thereto. For example, in FIGS. 2, 3, 4A, and 4B, the second surface 106 s 2 of the second substrate 106 may be modified to form a second surface having an uneven structure. Hereinafter, an example in which the second surface 106 s 2 of the second substrate 106 in FIGS. 4A and 4B is modified to form a second surface having an uneven structure will be described with reference to FIGS. 4C and 4D. FIGS. 4C and 4D are cross-sectional diagrams illustrating regions taken along lines Ia-Ia′ and IIa-IIa′ in FIG. 1 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIGS. 1 and 4C, the second surface 106 s 2 of the second substrate 106 in FIG. 4A may be modified to form a second surface 106 s 2′ having an uneven structure as in FIG. 4C. FIG. 4C illustrates an example in which the second surface 106 s 2 (in FIG. 4A) of the second substrate 106 in FIG. 4A is modified to form the second surface 106 s 2′ having an uneven structure, but the second surface 106 s 2 of the second substrate 106 in FIG. 2 may be modified to form the second surface 106 s 2′ having an uneven structure as in FIG. 4C. By forming the second surface 106 s 2′ in an uneven structure, light transmittance may improve. Accordingly, sensitivity of the image sensor 1 a may improve.
Referring to FIGS. 1 and 4D, as described with reference to FIG. 4C, to improve sensitivity of the image sensor 1 a, the second surface 106 s 2 of the second substrate 106 in FIG. 4B may be modified to form the second surface 106 s 2′ having an uneven structure as in FIG. 4D. Similarly, the second surface 106 s 2 of the second substrate 106 in FIG. 3 may also be modified to form the second surface 106 s 2′ having an uneven structure as in FIG. 4D.
In the description below, various modified examples of the above-described image sensor 1 a will be described with reference to FIGS. 5 to 45 . The various modified examples of the image sensor 1 a will be mainly described with respect to modified components or replaced components. Also, various components in the image sensor 1 a, which may be modified or replaced, may be combined with each other and may be included in an image sensor of a modified example.
An example of an image sensor will be described with reference to FIGS. 5 and 6 according to some example embodiments.
FIG. 5 is a diagram illustrating an image sensor according to some example embodiments, viewed from above, and FIG. 6 is a cross-sectional diagram illustrating regions taken along lines Ib-Ib′ and IIb-IIb′ in FIG. 5 , illustrating an example of the image sensor according to some example embodiments.
Referring to FIGS. 5 and 6 , an image sensor 1 b in the modified example may include an insulating structure 232 a which may replace the insulating structure 132 a (in FIG. 2 ) described with reference to FIG. 2 .
The insulating structure 232 a may include a lower layer 134, intermediate layers 236 a and 242 a, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 . The intermediate layers 236 a and 242 a may include a first intermediate layer 236 a and a second intermediate layer 242 a stacked in sequence. The first intermediate layer 236 a may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 242 a may include silicon oxide.
The insulating structure 232 a may include a first region 232A and a second region 232B having a thickness lower than that of the first region 232A.
In the first region 232A of the insulating structure 232 a, the second intermediate layer 242 a may include a first layer 244 a and a second layer 244 b stacked in sequence, and in the second region 232B of the insulating structure 232 a, the second intermediate layer 242 a may include the second layer 244 b. The first layer 244 a and the second layer 244 b of the second intermediate layer 242 a may include the same material, such as, for example, silicon oxide.
The second intermediate layer 242 a may include a relatively thick portion including the first and second layers 244 a and 244 b and a relatively thin portion including the second layer 244 b. According to the thickness difference depending on the position of the second intermediate layer 242 a, there may be a difference in thickness between the first and second regions 232A and 232B of the insulating structure 232 a.
An edge portion of each of the third color filters 170 c, the first and second color filters 170 a and 170 b, and the grid structure 160 may be disposed on the second region 232B of the insulating structure 232 a, and a center portion of each of the third color filters 170 c may be disposed on the first region 232A of the insulating structure 232 a.
In the insulating structure 232 a, a region in which the thickness changes, that is, a boundary region 232 br between the first region 232A and the second region 232B, may vertically overlap the third color filters 170 c, may be spaced apart from side surfaces of the third color filters 170 c, and may be spaced apart from the grid structure 160.
In the diagram viewed from above, the boundary region 232 br between the first region 232A and the second region 232B may also be described as a boundary region between a center portion and an edge portion of each of the third color filters 170 c.
In each of the third color filters 170 c, a lower surface of the center portion may be disposed on a level higher than a level of a lower surface of the edge portion. Lower surfaces of the first color filters 170 a, lower surfaces of the second color filters 170 b, lower surfaces of the edge portion of each of the third color filters 170 c, and lower surfaces of the grid structure 160 may be disposed on substantially the same level.
As described with reference to FIGS. 5 and 6 , the image sensor 1 b may include the insulating structure 232 a in which the thicknesses of the first and second regions 232A and 232B changes according to a change in the thickness of the second intermediate layer 242 a. Accordingly, since the image sensor 1 b may include the insulating structure 232 a having a thickness optimized according to wavelengths of the second and third color filters 170 b and 170 c, by improving transmittance of light passing through the insulating structure 232 a through the second and third color filters 170 b and 170 c, that is, the green color filter 170 b and the red color filter 170 c, sensitivity of the image sensor 1 b may improve.
In the description below, a modified example of the insulating structure 232 a (in FIG. 6 ) will be described with reference to FIG. 7 .
FIG. 7 is a cross-sectional diagram illustrating regions taken along lines Ib-Ib′ and IIb-IIb′ in FIG. 5 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIGS. 5 and 7 , an insulating structure 232 b as in FIG. 7 which may replace the insulating structure 232 a in FIG. 6 may include a lower layer 134, intermediate layers 236 b and 242 b, and an upper layer 148. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 .
The intermediate layers 236 b and 242 b may include a first intermediate layer 236 b and a second intermediate layer 242 b stacked in sequence. The first intermediate layer 236 b may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 242 b may include silicon oxide.
The insulating structure 332 b may include the first region 232A and the second region 232B having a thickness lower than the thickness of the first region 232A, as described with reference to FIG. 6 .
In the first region 232A of the insulating structure 232 b, the first intermediate layer 236 b may include a first layer 238 a and a second layer 238 b stacked in sequence, and in the second region 232B of the insulating structure 232 b, the first intermediate layer 236 b may include the second layer 238 b.
In some example embodiments, the first layer 238 a and the second layer 238 b of the first intermediate layer 236 b may include the same material, such as, for example, hafnium oxide. In some example embodiments, the first layer 238 a and the second layer 238 b of the first intermediate layer 236 b may be formed of different materials.
The first intermediate layer 236 b may include a relatively thick portion including the first and second layers 238 a and 238 b and a relatively thin portion including the second layer 238 b. According to the thickness difference depending on the position of the first intermediate layer 236 b, there may be a difference in thickness between the first and second regions 232A and 232B of the insulating structure 232 b, substantially the same as in the insulating structure 232 a in FIG. 6 .
In the description below, a modified example of the separation structure 115 of the image sensor 1 b in FIGS. 6 and 7 will be described with reference to FIGS. 8A and 8B.
FIGS. 8A and 8B are cross-sectional diagrams illustrating regions taken along lines Ib-Ib′ and IIb-IIb′ in FIG. 5 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIG. 8A, the separation structure 115 in FIG. 6 may be modified to form a separation structure 115′ in FIG. 8A. The separation structure 115′ may be disposed in the opening 112′ as described with reference to FIG. 4A. The insulating structure 232 a (in FIG. 6 ) including the first region 232A and the second region 232B having different thicknesses as illustrated in FIG. 6 may be modified to form an insulating structure 232 ca including a portion extending into the opening 112′.
In some example embodiments, the insulating structure 232 ca may include a lower layer 134′, intermediate layers 236 a′ and 242 ca and an upper layer 148 stacked in sequence. The intermediate layers 236 a′ and 242 ca may include a first intermediate layer 236 a′ and a second intermediate layer 242 ca stacked in sequence. The second intermediate layer 242 ca may include a first layer 244 a′, a second layer 244 b′, and a third layer 244 c′.
The lower layer 134′ may extend into the opening 112′ and may be included in the first layer 116 a′ of the separation structure 115′, a portion of the intermediate layers 236 a′ and 242 ca, such as, for example, the first intermediate layer 236 a′, may extend into the opening 112′ and may be included in a second layer 116 b′ of the separation structure 115′, and the first layer 244 a′ of the second intermediate layer 242 ca may extend into the opening 112′ and may be included in the third layer 116 c′ of the separation structure 115′.
In some example embodiments, the second layer 244 b′ and the third layer 244 c′ of the second intermediate layer 242 ca may correspond to the first layer 244 a and the second layer 244 b of the second intermediate layer 242 a described with reference to FIG. 6 , and may be formed of the same material as that of the first layer 244 a and the second layer 244 b of the second intermediate layer 242 a described with reference to FIG. 6 . In the second intermediate layer 242 ca, the first layer 244 a′ may include the same material as that of the second layer 244 b′ and the third layer 244 c′, such as, for example, silicon oxide.
In some example embodiments, the first layer 244 a′ of the second intermediate layer 242 ca may not be provided, and the third layer 244 c′ of the second intermediate layer 242 ca may extend into the opening 112′ and may be included in the third layer 116 c′ of the separation structure 115′.
In the description below, referring to FIGS. 7 and 8B, the separation structure 115 (in FIG. 7 ) in FIG. 7 may be modified to form the separation structure 115′ as in FIG. 8B. The separation structure 115′ may be disposed in the opening 112′ as described with reference to FIG. 4A.
The insulating structure 232 b (in FIG. 7 ) described with reference to FIG. 7 may be modified to form an insulating structure 232 cb including at least one material layer extending into the opening 112′. For example, at least a portion of the insulating structure 232 b (in FIG. 7 ) described with reference to FIG. 7 may extend into the opening 112′ and may form the separation structure 115′. For example, the separation structure 115′ may include a first layer 116 a′, a second layer 116 b′, and a third layer 116 c′ covering the internal wall of the opening 112′ in sequence, and the first to third layers 116 a′, 116 b′, and 116 c′ may extend from at least a portion of the insulating structure 232 cb.
In some example embodiments, the insulating structure 232 cb may include a lower layer 134′, intermediate layers 236 b′ and 242 b′, and an upper layer 148 stacked in sequence. The intermediate layers 236 b′ and 242 b′ may include a first intermediate layer 236 b′ and a second intermediate layer 242 b′ stacked in sequence. The first intermediate layer 236 b′ may include a first layer 238 a′ and a second layer 238 b′ stacked in sequence.
The lower layer 134′, the intermediate layers 236 b′ and 242 b′ and the upper layer 148 of the insulating structure 232 cb may correspond to the lower layer 134, the intermediate layers 236 b and 242 b, and the upper layer 148 of the insulating structure 232 b described with reference to FIG. 7 , respectively, and may be formed of the same material as those of the lower layer 134, the intermediate layers 236 b and 242 b, and the upper layer 148 of the insulating structure 232 b.
The lower layer 134′ may extend into the opening 112′ and may be included in the first layer 116 a′ of the separation structure 115′, in the intermediate layers 236 b′ and 242 b′, the second layer 238 b′ of the first intermediate layer 236 b′ may extend into the opening 112′ and may be included in the second layer 116 b′ of the separation structure 115′, and the second intermediate layer 242 b′ may extend into the opening 112′ and may be included in the third layer 116 c′ of the separation structure 115′.
In FIGS. 6, 7, 8A, and 8B, the second surface 106 s 2 of the second substrate 106 may be substantially planar, but some example embodiments thereof is not limited thereto. For example, in FIGS. 6, 7, 8A, and 8B, the second surface 106 s 2 of the second substrate 106 may be modified to form a second surface having an uneven structure. Hereinafter, a modified example of the second surface 106 s 2 of the second substrate 106 in FIGS. 8A and 8B will be described with reference to FIGS. 9A and 9B.
FIGS. 9A and 9B are cross-sectional diagrams illustrating regions taken along lines Ib-Ib′ and IIb-IIb′ in FIG. 5 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIGS. 5 and 9A, in some example embodiments, including the example embodiments shown in FIG. 8A, the second surface 106 s 2 of the second substrate 106 may be substantially planar, but as described with reference to FIGS. 4C and 4D, the second surface 106 s 2 may be modified to form a second surface 106 s 2′ having an uneven structure. Similarly, the second surface 106 s 2 of the second substrate 106 in FIG. 8A may be modified to form a second surface 106 s 2′ having an uneven structure.
Referring to FIGS. 5 and 9B, in some example embodiments, including the example embodiments shown in FIG. 8B, the second surface 106 s 2 of the second substrate 106 may be substantially planar, but as described with reference to FIGS. 4C and 4D, the second surface 106 s 2 may be modified to form the second surface 106 s 2′ having an uneven structure. Similarly, the second surface 106 s 2 of the second substrate 106 in FIG. 8B may be modified to form a second surface 106 s 2′ having an uneven structure.
In the description below, an example of an image sensor according to some example embodiments will be described with reference to FIGS. 10 and 11 .
FIG. 10 is a diagram illustrating an image sensor according to some example embodiments, viewed from above, and FIG. 11 is a cross-sectional diagram illustrating regions taken along lines Ic-Ic′ and IIc-IIc′ in FIG. 10 .
Referring to FIGS. 10 and 11 , an image sensor 1 c in the modified example may include an insulating structure 332 a which may replace the insulating structure 132 a (in FIG. 2 ) described with reference to FIG. 2 .
The insulating structure 332 a may include a lower layer 134, intermediate layers 336 a and 342 a, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 . The intermediate layers 336 a and 342 a may include a first intermediate layer 336 a and a second intermediate layer 342 a stacked in sequence. The first intermediate layer 336 a may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 342 a may include silicon oxide.
The insulating structure 332 a may include a first region 332A, a second region 332B having a thickness greater than that of the first region 332A, and a third region 332C having a thickness greater than a thickness of the second region 332B.
In the third region 332C of the insulating structure 332 a, the second intermediate layer 342 a may include a first layer 344 a, a second layer 344 b and a third layer 344 c stacked in sequence, in the second region 332B of the insulating structure 332 a, the second intermediate layer 342 a may include the second layer 344 b and the third layer 344 c stacked in sequence, and in the first region 332A of the insulating structure 332 a, the second intermediate layer 342 a may include the third layer 344 c.
In some example embodiments, the first layer 344 a, the second layer 344 b, and the third layer 344 c of the second intermediate layer 342 a may include the same material, such as, for example, silicon oxide. In some example embodiments, at least two of the first layer 344 a, the second layer 344 b, and the third layer 344 c of the second intermediate layer 342 a may be formed of different materials.
The second intermediate layer 342 a may include a maximum thickness portion including the first to third layers 344 a, 344 b, 344 c, an intermediate thickness portion including the second and third layers 344 b and 344 c, and a minimum thickness portion including the third layer 344 c. According to the thickness difference depending on the position of the second intermediate layer 342 a, there may be a difference in thickness between the first to third regions 332A, 332B, and 332C of the insulating structure 332 a.
The second color filters 170 b, an edge portion of each the third color filters 170 c, an edge portion of each of the first color filters 170 a, and the grid structure 160 may be disposed on the second region 332B of the insulating structure 332 a, a center portion of each of the third color filters 170 c may be disposed on the third region 332C of the insulating structure 332 a, and a central portion of each of the first color filters 170 a may be disposed on the first region 332A of the insulating structure 332 a.
In the insulating structure 332 a, a region in which the thickness changes, that is, a first boundary region 332 br 1 between the first region 332A and the second region 332B, may vertically overlap the first color filters 170 a and may be spaced apart from the grid structure 160. A second boundary region 332 br 2 between the second region 332B and the third region 332C may vertically overlap the third color filters 170 c and may be spaced apart from the grid structure 160.
In the diagram viewed from above, the first boundary region 332 br 1 between the first region 332A and the second region 332B may be described as a boundary region between a center portion and an edge portion in each of the first color filters 170 a, and the second boundary region 332 br 2 between the second region 332B and the third region 332C may be described as a boundary region between a central portion and an edge portion in the third color filters 170 c.
As described with reference to FIGS. 10 and 11 , the image sensor 1 c may include the insulating structures 332 a in which the thicknesses of the first to third regions 332A, 332B, and 323C change according to a change in the thickness of the second intermediate layer 342 a. Accordingly, since the image sensor 1 c may include the insulating structure 332 a having a thickness optimized according to wavelengths of the first, second and third color filters 170 a, 170 b, and 170 c, by improving transmittance of light passing through the insulating structure 332 a through the first, second, and third color filters 170 a, 170 b, and 170 c, that is, the blue color filter 170 a, the green color filter 170 b, and the red color filter 170 c, sensitivity of the image sensor 1 c may improve.
In the description below, a modified example of the insulating structure 332 a (in FIG. 11 ) will be described with reference to FIG. 12 .
FIG. 12 is a cross-sectional diagram illustrating regions taken along lines Ic-Ic′ and IIc-IIc′ in FIG. 10 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIGS. 10 and 12 , an insulating structure 332 b in FIG. 12 which may replace the insulating structure 332 a in FIG. 11 may include a lower layer 134, an intermediate layer 336 b and 342 b, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 .
The intermediate layers 336 b and 342 b may include a first intermediate layer 336 b and a second intermediate layer 342 b stacked in sequence. The first intermediate layer 336 b may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 342 b may include silicon oxide.
The insulating structure 332 b may include the first region 332A, the second region 332B having a thickness greater than the thickness of the first region 332A, and the third region 332C having a thickness greater than the thickness of the second region 332B.
In the third region 332C of the insulating structure 332 b, the first intermediate layer 336 b may include a first layer 338 a, a second layer 338 b and a third layer 338 c stacked in sequence, in the second region 332B of the insulating structure 332 b, the first intermediate layer 336 b may include the second layer 338 b and the third layer 338 c stacked in sequence, and in the first region 332A of the insulating structure 332 b, the first intermediate layer 336 b may include the third layer 338 c.
In some example embodiments, the first layer 338 a, the second layer 338 b, and the third layer 338 c of the first intermediate layer 336 b may include the same material, such as, for example, hafnium oxide. In some example embodiments, at least two of the first layer 338 a, the second layer 338 b, and the third layer 338 c of the first intermediate layer 336 b may be formed of different materials.
The first intermediate layer 336 b may include a maximum thickness portion including the first to third layers 338 a, 338 b, and 338 c, an intermediate thickness portion including the second and third layers 338 b and 338 c, and a minimum thickness portion including the third layer 338 c. According to the thickness difference depending on the position of the first intermediate layer 336 b, there may be a difference in thickness between the first to third regions 332A, 332B, and 332C of the insulating structure 332 b.
The second color filters 170 b, an edge portion of each of the third color filters 170 c, an edge portion of each of the first color filters 170 a, and the grid structure 160 may be disposed on the second region 332B of the insulating structure 332 b, a center portion of each of the third color filters 170 c may be disposed on the third region 332C of the insulating structure 332 b, and a central portion of each of the first color filters 170 a may be disposed on the first region 332A of the insulating structure 332 b.
In the description below, a modified example of the separation structure 115 of the image sensor 1 c in FIGS. 11 and 12 will be described with reference to FIG. 13 .
FIG. 13 is a cross-sectional diagram illustrating regions taken along lines Ib-Ib′ and IIb-IIb′ in FIG. 10 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIG. 13 , the separation structure 115 in FIGS. 11 and 12 may be modified to form a separation structure 115′ disposed in the opening 112′ as described with reference to FIG. 4A. The separation structure 115′ may include at least two layers, such as, for example, a first layer 115 a′ and a second layer 115 b′ on the first layer 115 a′. The insulating structure (332 a in FIG. 11 or 332 b in FIG. 12 ) including the first region 332A, the second region 332B, and the third region 332C having different thicknesses as in FIGS. 11 and 12 may be modified to form an insulating structure 332 c including a portion extending into the opening 112′ extending in a direction from the second side 106 s 2 of the second substrate 106 toward the first side 106 s 1.
In some example embodiments, the insulating structure 332 c may include a lower layer 134′, intermediate layers 336 a′ and 342 a, and an upper layer 148 stacked in sequence. The intermediate layers 336 a′ and 342 a may include a first intermediate layer 336 a′ and a second intermediate layer 342 a stacked in sequence.
The lower layer 134′ may extend into the opening 112′ and may be included in a first layer 115 a′ of the separation structure 115′, and a portion of the intermediate layers 336 a′ and 342 a, such as, for example, the first intermediate layer 336 a′, may extend into the opening 112′ and may be included in the second layer 115 b′ of the separation structure 115′.
In the description below, a modified example of the second surface 106 s 2 of the second substrate 106 in FIGS. 11, 12 and 13 will be described with reference to FIG. 14 .
FIG. 14 is a cross-sectional diagram illustrating regions taken along lines Ib-Ib′ and IIb-IIb′ in FIG. 10 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIGS. 10 and 14 , in FIGS. 11, 12, and 13 described above, the second surface 106 s 2 of the second substrate 106 may be substantially planar, but as described with reference to FIGS. 4C and 4D, the second surface 106 s 2 may be modified to form a second surface 106 s 2′ having an uneven structure.
In the description below, an example of an image sensor will be described with reference to FIGS. 15 and 16 according to some example embodiments.
FIG. 15 is a diagram illustrating an image sensor according to some example embodiments of, viewed from above, and FIG. 16 is a cross-sectional diagram illustrating regions taken along lines Id-Id′ and IId-IId′.
Referring to FIGS. 15 and 16 , an image sensor 1 d in the modified example may include an insulating structure 432 a which may replace the insulating structure 132 a (in FIG. 2 ) described with reference to FIG. 2
The insulating structure 432 a may include a lower layer 134, intermediate layers 436 a and 442 a, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 . The intermediate layers 436 a and 442 a may include a first intermediate layer 436 a and a second intermediate layer 442 a stacked in sequence. The first intermediate layer 436 a may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 442 a may include silicon oxide.
The insulating structure 432 a may include a first region 432A, a second region 432B having a thickness greater than a thickness of the first region 432A, and a third region 432C having a thickness greater than a thickness of the second region 432B.
In the third region 432C of the insulating structure 432 a, the second intermediate layer 442 a may include a first layer 444 a, a second layer 444 b, and a third layer 444 c stacked in sequence, in the second region 432B of the insulating structure 432 a, the second intermediate layer 442 a may include the second layer 444 b and the third layer 444 c stacked in sequence, and in the first region 432A of the insulating structure 432 a, the second intermediate layer 442 a may include the third layer 444 c.
In some example embodiments, the first layer 444 a, the second layer 444 b, and the third layer 444 c of the second intermediate layer 442 a may include the same material, such as, for example, silicon oxide. In some example embodiments, at least two of the first layer 444 a, the second layer 444 b, and the third layer 444 c of the second intermediate layer 442 a may be formed of different materials.
The second intermediate layer 442 a may include a maximum thickness portion including the first to third layers 444 a, 444 b, and 444 c, an intermediate thickness portion including the second and third layers 444 b and 444 c, and a minimum thickness portion including the third layer 444 c. According to the thickness difference depending on the position of the second intermediate layer 442 a, there may be a difference in thickness between the first to third regions 432A, 432B, and 432C of the insulating structure 432 a.
The third color filters 170 c, an edge portion of each of the second color filters 170 b, an edge portion of each of the first color filters 170 a, and the grid structure 160 may be disposed on the third region 432C of the insulating structure 432 a, a center portion of each of the second color filters 170 b may be disposed on the second region 432B of the insulating structure 432 a, and a central portion of each of the first color filters 170 a may be disposed on the first region 432A of the insulating structure 432 a.
In the insulating structure 432 a, a region in which the thickness changes, that is, a first boundary region 432 br 1 between the first region 432A and the second region 432B, may vertically overlap the first color filters 170 a and may be spaced apart from the grid structure 160, and a second boundary region 432 br 2 between the second region 432B and the third region 432C may vertically overlap the second color filters 170 b and may be spaced apart from the grid structure 160.
In the diagram viewed from above, the first boundary region 432 br 1 between the first region 432A and the second region 432B may be described as a boundary region between a center portion and an edge portion in each of the first color filters 170 a, and the second boundary region 432 br 2 between the second region 432B and the third region 432C may also be described as a boundary region between a center portion and an edge portion in the second color filters 170 b.
In each of the first color filters 170 a, a lower surface of the center portion may be disposed on a level lower than a level of a lower surface of the edge portion, and in each of the second color filters 170 b, a lower surface of the intermediate portion may be disposed on a level lower than a level of a lower surface of the edge portion. A lower surface of the center portion of each of the second color filters 170 b may be disposed on a level higher than a level of a lower surface of the center portion of each of the first color filters 170 a. A lower surface of the edge portion of each of the first color filters 170 a, a lower surface of the edge portion of each of the second color filters 170 b, lower surfaces of the third color filters 170 c, and the lower surface of the grid structure 160 may be disposed on substantially the same level.
The image sensor 1 d described with reference to FIGS. 15 and 16 may include the insulating structures 432 a in which thicknesses of the first to third regions 432A, 432B, and 423C change according to the change in the thickness of the second intermediate layer 442 a. Accordingly, since the image sensor 1 d may include the insulating structure 432 a having a thickness optimized according to wavelengths of the first, second and third color filters 170 a, 170 b, and 170 c, by improving transmittance of light passing through the insulating structure 432 a through the first, second, and third color filters 170 a, 170 b, and 170 c, that is, the blue color filter 170 a, the green color filter 170 b, and the red color filter 170 c, sensitivity of the image sensor 1 d may improve.
In the description below, a modified example of the insulating structure 432 a (in FIG. 16 ) will be described with reference to FIG. 17 .
FIG. 17 is a cross-sectional diagram illustrating regions taken along lines Id-Id′ and IId-IId′ in FIG. 15 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIGS. 15 and 17 , an insulating structure 432 b as in FIG. 17 which may replace the insulating structure 432 a in FIG. 16 may include a lower layer 134, intermediate layers 436 b and 442 b, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 .
The intermediate layers 436 b and 442 b may include a first intermediate layer 436 b and a second intermediate layer 442 b stacked in sequence. The first intermediate layer 436 b may include substantially the same material as the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 442 b may include silicon oxide.
The insulating structure 432 b may include the first region 432A, the second region 432B having a thickness greater than the thickness of the first region 432A, and the third region 432C having a thickness greater than that of the second region 432B, described with reference to FIG. 16 .
In the third region 432C of the insulating structure 432 b, the first intermediate layer 436 b may include a first layer 438 a, a second layer 438 b and a third layer 438 c stacked in sequence, in the second region 432B of the insulating structure 432 b, the first intermediate layer 436 b may include the second layer 438 b and the third layer 438 c stacked in sequence, and in the first region 432A of the insulating structure 432 b, the first intermediate layer 436 b may include the third layer 438 c.
In some example embodiments, the first layer 438 a, the second layer 438 b, and the third layer 438 c of the first intermediate layer 436 b may include the same material, such as, for example, hafnium oxide. In some example embodiments, at least two of the first layer 438 a, the second layer 438 b, and the third layer 438 c of the first intermediate layer 436 b may be formed of different materials.
The first intermediate layer 436 b may include a maximum thickness portion including the first to third layers 438 a, 438 b, and 438 c, and an intermediate thickness portion including the second and third layers 438 b and 438 c, and a minimum thickness portion including the third layer 438 c. According to the thickness difference depending on the position of the first intermediate layer 436 b, there may be a difference in thicknesses between the first to third regions 432A, 432B, and 432C of the insulating structure 432 b as described with reference to FIG. 17 .
In the description below, a modified example of the separation structure 115 of the image sensor 1 d in FIGS. 16 and 17 will be described with reference to FIG. 18A.
FIG. 18A is a cross-sectional diagram illustrating regions taken along lines Id-Id′ and IId-IId′ in FIG. 15 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIG. 18A, the separation structure 115 in FIGS. 16 and 17 may be modified to form a separation structure 115′ disposed in the opening 112′ as described with reference to FIG. 4A. The separation structure 115′ may include at least two layers, such as, for example, a first layer 115 a′ and a second layer 115 b′ on the first layer 115 a′. The insulating structure (432 a in FIG. 16 or 432 b in FIG. 17 ) including the first region 432A, the second region 432B, and the third region 432C having different thicknesses as in FIG. 17 may be modified to form an insulating structure 432 c including a portion extending into the opening 112′.
In some example embodiments, the insulating structure 432 c may include a lower layer 134′, intermediate layers 436 c′ and 442 b, and an upper layer 148 stacked in sequence. The intermediate layers 436 c′ and 442 b may include a first intermediate layer 436 c′ and a second intermediate layer 442 b stacked in sequence. The lower layer 134′ may extend into the opening 112′ and may be included in a first layer 115 a′ of the separation structure 115′, and a portion of the intermediate layer 436 c′ and 442 b, such as, for example, the first intermediate layer 436 c′, may extend into the opening 112′ and may be included in the second layer 115 b′ of the separation structure 115′.
In the description below, a modified example of the second surface 106 s 2 of the second substrate 106 in FIGS. 16, 17 and 18A will be described with reference to FIG. 18B.
FIG. 18B is a cross-sectional diagram illustrating regions taken along lines Id-Id′ and IId-IId′ in FIG. 15 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIGS. 15 and 18B, in FIGS. 16, 17, and 18A described above, the second surface 106 s 2 of the second substrate 106 may be substantially planar, but may be modified to form the second surface 106 s 2′ having an uneven structure described in FIGS. 4C and 4D.
In the description below, an example of an image sensor in some example embodiments will be described with reference to FIGS. 19 and 20 .
FIG. 19 is a diagram illustrating an image sensor according to some example embodiments, viewed from above, and FIG. 20 is a cross-sectional diagram illustrating regions taken along the lines Ie-Ie′ and IIe-IIe′.
Referring to FIGS. 19 and 20 , an image sensor 1 e in the modified example may include an insulating structure 532 a which may replace the insulating structure 132 a (in FIG. 2 ) described in FIG. 2 , color filters 570 which may replace the color filters 170 described with reference to FIG. 2 , and a grid structure 560 which may replace the grid structure 160 described with reference to FIG. 2 .
The insulating structure 532 a may include a lower layer 134, intermediate layers 536 a and 542 a, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 . The intermediate layers 536 a and 542 a may include a first intermediate layer 536 a and a second intermediate layer 542 a stacked in sequence. The first intermediate layer 536 a may include substantially the same material as that of the first intermediate layer 136 a (in FIG. 2 ), such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 542 a may include silicon oxide.
The insulating structure 532 a may include a first region 532A and a second region 532B having a thickness greater than that of the first region 532A.
In the second region 532B of the insulating structure 532 a, the second intermediate layer 542 a may include a first layer 544 a and a second layer 544 b stacked in sequence, and in the first region 532A of the insulating structure 532 a, the second intermediate layer 542 a may include the second layer 544 b.
In some example embodiments, the first layer 544 a and the second layer 544 b of the second intermediate layer 542 a may include the same material, such as, for example, silicon oxide. In some example embodiments, the first layer 544 a and the second layer 544 b of the second intermediate layer 542 a may be formed of different materials.
The second intermediate layer 542 a may include a maximum thickness portion including the first and second layers 544 a and 544 b and a minimum thickness portion including the second layer 544 b. According to the thickness difference depending on the position of the second intermediate layer 542 a, there may be a difference in thickness between the first and second regions 532A and 532B of the insulating structure 532 a.
The color filters 570 may include first color filters 570 a, second color filters 570 b, and third color filters 570 c. For example, the first color filters 570 a may be configured as blue color filters, the second color filters 570 b may be configured as green color filters, and the third color filters 570 c may be configured as red color filters.
Each of the color filters 570 may vertically overlap the plurality of photoelectric conversion devices, such as, for example, photodiodes PD. For example, one of the color filters 570, such as, for example, one first color filter 570 a may vertically overlap the plurality of photoelectric conversion devices PD. One of the color filters 570, such as, for example, a first color filter 570 a, may vertically overlap a portion of the separation structure 115.
The grid structure 560 may be disposed between color filters of different colors among the color filters 570. The grid structure 560 may include a first layer 162 a and a second layer 162 b stacked in sequence as described with reference to FIG. 2 .
The third color filters 570 c, the second color filters 570 b, an edge portion of each of the first color filters 570 a, and the grid structure 560 may be disposed on the second region 532B of the insulating structure 532 a, and a center portion of each of the first color filters 570 a may be disposed on the first region 532A of the insulating structure 532 a.
In the insulating structure 532 a, a region in which the thickness changes, that is, a boundary region 532 br between the first region 532A and the second region 532B may vertically overlap the first color filters 570 a and may be spaced apart from the grid structure 560.
In the diagram viewed from above, the boundary region 532 br between the first region 532A and the second region 532B may also be described as a boundary region between a center portion and an edge portion in each of the first color filters 570 a.
The image sensor 1 e may include the insulating structure 532 a in which the thicknesses of the first and second regions 532A and 532B change according to the change in the thickness of the second intermediate layer 542 a. Accordingly, since the image sensor 1 e may include the insulating structure 532 a having a thickness optimized according to wavelengths of the first and second color filters 570 a and 570 b, by improving transmittance of light passing through the insulating structure 532 a through the first and second color filters 570 a and 570 b, that is, the blue color filter 570 a and the green color filter 570 b, sensitivity of the image sensor 1 e may improve.
In the description below, a modified example of the insulating structure 532 a will be described with reference to FIG. 21 .
FIG. 21 is a cross-sectional diagram illustrating regions taken along lines Ie-Ie′ and IIe-IIe′ in FIG. 19 , illustrating a modified example of the image sensor in some example embodiments.
Referring to FIGS. 19 and 21 , the insulating structure 532 b as in FIG. 21 which may replace the insulating structure 532 a in FIG. 20 may include a lower layer 134, intermediate layers 536 b and 542 b, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 . The intermediate layers 536 b and 542 b may include a first intermediate layer 536 b and a second intermediate layer 542 b stacked in sequence. The first intermediate layer 536 b may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 542 b may include silicon oxide.
The insulating structure 532 b may include the first region 532A having a first thickness and the second region 532B having a second thickness greater than the first thickness, as described with reference to FIG. 20 .
In the second region 532B of the insulating structure 532 b, the first intermediate layer 536 b may include a first layer 538 a and a second layer 538 b stacked in sequence, and, in the first region 532A of the insulating structure 532 b, the first intermediate layer 536 b may include the second layer 538 b.
In some example embodiments, the first layer 538 a and the second layer 538 b of the first intermediate layer 536 b may include the same material, such as, for example, hafnium oxide. In some example embodiments, the first layer 538 a and the second layer 538 b of the first intermediate layer 536 b may be formed of different materials.
The first intermediate layer 536 b may include a relatively thick portion including the first and second layers 538 a and 538 b and a relatively thin portion including the second layer 538 b. According to the thickness difference depending on the position of the first intermediate layer 536 b, there may be a difference in thickness between the first and second regions 532A and 532B of the insulating structure 532 b as described with reference to FIG. 20 .
In the description below, a modified example of the separation structure 115 of the image sensor 1 e in FIGS. 20 and 21 will be described with reference to FIG. 22 .
FIG. 22 is a cross-sectional diagram illustrating regions taken along lines Ie-Ie′ and IIe-IIe′ in FIG. 19 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIG. 22 , the separation structure 115 in FIGS. 20 and 21 may be modified to form a separation structure 115′ disposed in the opening 112′ as described with reference to FIG. 4A. The separation structure 115′ may include at least two layers, such as, for example, a first layer 115 a′ and a second layer 115 b′ on the first layer 115 a′. As illustrated in FIGS. 20 and 21 , the insulating structure (532 a in FIG. 20 or 532 b in FIG. 21 ) including the first region 532A and the second region 532B having different thicknesses may be modified to form an insulating structure 532 c including a portion extending into the opening 112′.
In some example embodiments, the insulating structure 532 c may include a lower layer 134′, intermediate layers 536 a′ and 542 a, and an upper layer 148 stacked in sequence. The intermediate layers 536 a′ and 542 a may include a first intermediate layer 536 a′ and a second intermediate layer 542 a stacked in sequence. The lower layer 134′ may extend into the opening 112′ and may be included in a first layer 115 a′ of the separation structure 115′, and a portion of the intermediate layer 536 a′ and 542 a, such as, for example, the first intermediate layer 536 a′, may extend into the opening 112′ and may be included in the second layer 115 b′ of the separation structure 115′.
In the description below, a modified example of the second surface 106 s 2 of the second substrate 106 in FIGS. 20, 21 and 22 will be described with reference to FIG. 23 .
FIG. 23 is a cross-sectional diagram illustrating regions taken along lines Ie-Ie′ and IIe-IIe′ in FIG. 19 , illustrating a modified example of an image sensor according to some example embodiments.
Referring to FIGS. 20 and 23 , in FIGS. 20, 21 and 22 , the second surface 106 s 2 of the second substrate 106 may be substantially planar, but may be modified to the second surface 106 s 2′ having an uneven structure described with reference to FIGS. 4C and 4D.
In the description below, an example of an image sensor in some example embodiments will be described with reference to FIGS. 24 and 25 .
FIG. 24 is a diagram illustrating an image sensor according to some example embodiments, viewed from above, and FIG. 25 is a cross-sectional diagram illustrating regions taken along the lines If-If′ and IIf-IIf′.
Referring FIGS. 24 and 25 , an image sensor if in the modified example may include an insulating structure 632 a which may replace the insulating structure 532 a (in FIG. 20 ) in the image sensor 1 e in FIG. 20 . Accordingly, the image sensor if may include the same color filters 570 and the grid structure 560 as the image sensor 1 e in FIG. 20 .
The insulating structure 632 a may include a lower layer 134, intermediate layers 636 a and 642 a, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 . The intermediate layers 636 a and 642 a may include a first intermediate layer 636 a and a second intermediate layer 642 a stacked in sequence. The first intermediate layer 636 a may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 642 a may include silicon oxide.
The insulating structure 632 a may include a first region 632A and a second region 632B having a thickness lower than a thickness of the first region 632A.
In the first region 632A of the insulating structure 632 a, the second intermediate layer 642 a may include a first layer 644 a and a second layer 644 b stacked in sequence, and, in the second region 632B of the insulating structure 632 a, the second intermediate layer 642 a may include the second layer 644 b.
In some example embodiments, the first layer 644 a and the second layer 644 b of the second intermediate layer 642 a may include the same material, such as, for example, silicon oxide. In some example embodiments, the first layer 644 a and the second layer 644 b of the second intermediate layer 642 a may be formed of different materials.
The second intermediate layer 642 a may include a maximum thickness portion including the first and second layers 644 a and 644 b and a minimum thickness portion including the second layer 644 b. According to the thickness difference depending on the position of the second intermediate layer 642 a, there may be a difference in thickness between the first and second regions 632A and 632B of the insulating structure 632 a.
In the insulating structure 632 a, a region in which the thickness changes, that is, a boundary region 632 br between the first region 632A and the second region 632B may vertically overlap the third color filters 570 c and may be spaced apart from the grid structure 560.
In the diagram viewed from above, the boundary region 632 br between the first region 632A and the second region 632B may also be described as a boundary region between a center portion and an edge portion in each of the third color filters 570 c.
The image sensor if may include the insulating structure 632 a in which thicknesses of the first and second regions 632A and 632B change according to a change in the thickness of the second intermediate layer 642 a. Accordingly, since the image sensor if may include the insulating structure 632 a having a thickness optimized according to wavelengths of the second and third color filters 570 b and 570 c, by improving transmittance of light passing through the insulating structure 632 a through the second and third color filters 570 b and 570 c, that is, the green color filter 570 b and the red color filter 570 c, sensitivity of the image sensor 1 f may improve.
In the description below, a modified example of the insulating structure 632 a will be described with reference to FIG. 26 .
FIG. 26 is a cross-sectional diagram illustrating regions taken along the If-If′ and IIf-IIf′ lines in FIG. 24 , illustrating a modified example of the image sensor some example embodiments.
Referring to FIGS. 24 and 26 , an insulating structure 632 b as illustrated in FIG. 26 which may replace the insulating structure 632 a in FIG. 25 may include a lower layer 134, an intermediate layer 636 b and 642 b, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 . The intermediate layers 636 b and 642 b may include a first intermediate layer 636 b and a second intermediate layer 642 b stacked in sequence. The first intermediate layer 636 b may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 642 b may include silicon oxide.
The insulating structure 632 b may include the first region 632A having a first thickness and the second region 632B having a second thickness greater than the first thickness, as described with reference to FIG. 25 .
In the first region 632A of the insulating structure 632 b, the first intermediate layer 636 b may include a first layer 638 a and a second layer 638 b stacked in sequence, and, in the second region 632B of the insulating structure 632 b, the first intermediate layer 636 b may include the second layer 638 b.
In some example embodiments, the first layer 638 a and the second layer 638 b of the first intermediate layer 636 b may include the same material, such as, for example, hafnium oxide. In some example embodiments, the first layer 638 a and the second layer 638 b of the first intermediate layer 636 b may be formed of different materials.
The first intermediate layer 636 b may include a relatively thick portion including the first and second layers 638 a and 638 b and a relatively thin portion including the second layer 638 b. According to the thickness difference depending on the position of the first intermediate layer 636 b, there may be a difference in thickness between the first and second regions 632A and 632B of the insulating structure 632 b as described with reference to FIG. 25 .
In the description below, a modified example of the separation structure 115 of the image sensor if in FIGS. 25 and 26 will be described with reference to FIG. 27 .
FIG. 27 is a cross-sectional diagram illustrating regions taken along the If-If′ and IIf-IIf′ lines in FIG. 24 , illustrating a modified example of the image sensor in some example embodiments.
Referring to FIG. 27 , the separation structure 115 in FIGS. 25 and 26 may be modified to form a separation structure 115′ disposed in the opening 112′ as described with reference to FIG. 4A. The separation structure 115′ may include at least two layers, such as, for example, a first layer 115 a′ and a second layer 115 b′ on the first layer 115 a′. As in FIGS. 25 and 26 , the insulating structure (632 a in FIG. 25 or 632 b in FIG. 26 ) including the first region 632A and the second region 632B having different thicknesses may be modified to form an insulating structure 632 c extending into the opening 112′.
In some example embodiments, the insulating structure 632 c may include a lower layer 134′, intermediate layers 636 a′ and 642 a, and an upper layer 148 stacked in sequence. The intermediate layers 636 a′ and 642 a may include a first intermediate layer 636 a′ and a second intermediate layer 642 a stacked in sequence. The lower layer 134′ may extend into the opening 112′ and may be included in a first layer 115 a′ of the separation structure 115′, and a portion of the intermediate layer 636 a′ and 642 a, such as, for example, the first intermediate layer 636 a′ may extend into the opening 112′ and may be included in the second layer 115 b′ of the separation structure 115′.
In the description below, a modified example of the second surface 106 s 2 of the second substrate 106 in FIGS. 25, 26 and 27 will be described with reference to FIG. 28 .
FIG. 28 is a cross-sectional diagram illustrating regions taken along the If-If′ and IIf-IIf′ lines in FIG. 24 , illustrating a modified example of the image sensor in some example embodiments.
Referring to FIGS. 24 and 28 , in FIGS. 25, 26 and 27 described above, the second surface 106 s 2 of the second substrate 106 may be substantially planar, but may be modified to form the second surface 106 s 2′ having an uneven structure as described with reference to FIGS. 4C and 4D.
In the description below, an example of an image sensor in some example embodiments will be described with reference to FIGS. 29 and 30 .
FIG. 29 is a diagram illustrating an image sensor according to some example embodiments, viewed from above, and FIG. 30 is a cross-sectional diagram illustrating regions taken along the lines Ifa-Ifa′ and IIfa-IIfa′.
Referring to FIGS. 29 and 30 , an image sensor 1 fa in the modified example may include an insulating structure 732 a which may replace the insulating structure 532 a in the image sensor 1 e in FIG. 20 . Accordingly, the image sensor 1 fa may include the same color filters 570 and the grid structure 560 as the image sensor 1 e in FIG. 20 .
The insulating structure 732 a may include a lower layer 134, intermediate layers 736 a and 742 a, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 . The intermediate layers 736 a and 742 a may include a first intermediate layer 736 a and a second intermediate layer 742 a stacked in sequence. The first intermediate layer 736 a may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 742 a may include silicon oxide.
The insulating structure 732 a may include a first region 732A, a second region 732B having a thickness greater than a thickness of the first region 732A, and a third region 732C having a thickness greater than a thickness of the second region 732B.
In the third region 732C of the insulating structure 732 a, the second intermediate layer 742 a may include a first layer 744 a, a second layer 744 b and a third layer 744 c stacked in sequence, in the second region 732B of the insulating structure 732 a, the second intermediate layer 742 a may include the second layer 744 b and the third layer 744 c stacked in sequence, and in the first region 732A of the insulating structure 732 a, the second intermediate layer 742 a may include the third layer 744 c.
In some example embodiments, the first layer 744 a, the second layer 744 b, and the third layer 744 c of the second intermediate layer 742 a may include the same material, such as, for example, silicon oxide. In some example embodiments, at least two of the first layer 744 a, the second layer 744 b, and the third layer 744 c of the second intermediate layer 742 a may be formed of different materials.
The second intermediate layer 742 a may include a maximum thickness portion including the first to third layers 744 a, 744 b, and 744 c, an intermediate portion including the second and third layers 744 b and 744 c, and a minimum thickness portion including the third layer 744 c. According to the thickness difference depending on the position of the second intermediate layer 742 a, there may be a difference in thickness between the first to third regions 732A, 732B, and 732C of the insulating structure 732 a.
The second color filters 570 b, an edge portion each of the third color filters 570 c, an edge portion of each of the first color filters 570 a, the grid structure 560 may be disposed on the second region 732B of the insulating structure 732 a, and a center portion of each of the third color filters 570 c may be disposed on the third region 732C of the insulating structure 732 a, and a central portion of each of the first color filters 570 a may be disposed on the first region 732A of the insulating structure 732 a.
In the insulating structure 732 a, a region in which the thickness changes, that is, a first boundary region 732 br 1 between the first region 732A and the second region 732B may vertically overlap the first color filters 570 a and may be spaced apart from the grid structure 560, and a second boundary region 732 br 2 between the second region 732B and the third region 732C may vertically overlap the third color filters 570 c and may be spaced apart from the grid structure 560.
In the diagram viewed from above, the first boundary region 732 br 1 between the first region 732A and the second region 732B may be described as a boundary region between a center portion and an edge portion in each of the first color filters 570 a, and the second boundary region 732 br 2 between the second region 732B and the third region 732C may be described as a boundary region between a central portion and an edge portion in each of the third color filters 570 c.
The image sensor 1 fa may include the insulating structure 732 a in which the thickness of the first to third regions 732A, 732B, and 723C changes according to a change in the thickness of the second intermediate layer 742 a. Accordingly, since the image sensor 1 fa may include the insulating structure 732 a having a thickness optimized according to wavelengths of the first, second and third color filters 570 a, 570 b, and 570 c, by improving transmittance of light passing through the insulating structure 732 a through the first, second, and third color filters 570 a, 570 b, and 570 c, that is, the blue color filter 570 a, the green color filter 570 b, and the red color filter 570 c, sensitivity of the image sensor 1 fa may improve.
In the description below, a modified example of the insulating structure 732 a will be described with reference to FIG. 31 .
FIG. 31 is a cross-sectional diagram illustrating regions taken along lines Ifa-Ifa′ and IIfa-IIfa′ in FIG. 29 , illustrating a modified example of the image sensor in some example embodiments.
Referring to FIGS. 29 and 31 , an insulating structure 732 b as illustrated in FIG. 31 which may replace the insulating structure 732 a in FIG. 30 may include a lower layer 134, intermediate layers 736 b and 742 b, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 . The intermediate layers 736 b and 742 b may include a first intermediate layer 736 b and a second intermediate layer 742 b stacked in sequence. The first intermediate layer 736 b may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 742 b may include silicon oxide.
As described with reference to FIG. 31 , the insulating structure 732 b may include the first region 732A, the second region 732B having a thickness greater than the thickness of the first region 732A, and the third region 732C having a thickness greater than that of the second region 732B.
In the third region 732C of the insulating structure 732 b, the first intermediate layer 736 b may include a first layer 738 a, a second layer 738 b and a third layer 738 c stacked in sequence, and in the second region 732B of the insulating structure 732 b, the first intermediate layer 736 b may include the second layer 738 b and the third layer 738 c stacked in sequence, and in the first region 732A of the insulating structure 732 b, the first intermediate layer 736 b may include the third layer 738 c.
In some example embodiments, the first layer 738 a, the second layer 738 b, and the third layer 738 c of the first intermediate layer 736 b may include the same material, such as, for example, hafnium oxide. In some example embodiments, at least two of the first layer 738 a, the second layer 738 b, and the third layer 738 c of the first intermediate layer 736 b may be formed of different materials.
The first intermediate layer 736 b may include a maximum thickness portion including the first to third layers 738 a, 738 b, and 738 c, an intermediate thickness portion including the second and third layers 738 b and 738 c, a minimum thickness portion including the third layer 738 c. According to the thickness difference depending on the position of the first intermediate layer 736 b, the thickness difference between the first to third regions 732A, 732B, and 732C of the insulating structure 732 b as illustrated in FIG. 30 .
In some example embodiments, the separation structure 115 in FIGS. 30 and 31 may be modified to form the a separation structure 115′ including a first layer 116 a′, a second layer 116 b′, and a third layer 116 c as in FIG. 4 a , and the insulating structure (732 a in FIG. 30 or 732 b in FIG. 31 ) including the first region 732A, the second region 732B, and the third region 732C having different thicknesses as in FIGS. 30 and 31 may be modified to form an insulating structure including a portion extending into the opening 112′ (FIG. 4 a ) extending in a direction from the second surface 106 s 2 of the second substrate 106 toward the first surface 106 s 1 as in FIG. 4A.
In some example embodiments, in FIGS. 30 and 31 , the second surface 106 s 2 of the second substrate 106 may be substantially planar, but as described with reference to FIGS. 4C and 4D, the second surface 106 s 2 may be modified to form the second surface 106 s 2′ having an uneven structure as described with reference to FIGS. 4C and 4D.
In the description below, an example of an image sensor in some example embodiments will be described with reference to FIGS. 32 and 33 .
FIG. 32 is a diagram illustrating an image sensor according to some example embodiments, viewed from above, and FIG. 33 is a cross-sectional diagram illustrating regions taken along the line Ig-Ig′ and IIg-IIg′.
Referring to FIGS. 32 and 33 , an image sensor 1 g in the modified example may include an insulating structure 832 a which may replace the insulating structure 532 a (in FIG. 20 ) in the image sensor 1 e in FIG. 20 .
The insulating structure 832 a may include a lower layer 134, intermediate layers 836 a and 842 a, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 . The intermediate layers 836 a and 842 a may include a first intermediate layer 836 a and a second intermediate layer 842 a stacked in sequence. The first intermediate layer 836 a may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 842 a may include silicon oxide.
The insulating structure 832 a may include a first region 832A, a second region 832B having a thickness greater than a thickness of the first region 832A, and a third region 832C having a thickness greater than a thickness of the second region 832B.
In the third region 832C of the insulating structure 832 a, the second intermediate layer 842 a may include a first layer 844 a, a second layer 844 b and a third layer 844 c stacked in sequence, in the second region 832B of the insulating structure 832 a, the second intermediate layer 842 a may include the second layer 844 b and the third layer 844 c, and in the first region 832A of the insulating structure 832 a, the second intermediate layer 842 a may include the third layer 844 c.
In some example embodiments, the first layer 844 a, the second layer 844 b, and the third layer 844 c of the second intermediate layer 842 a may include the same material, such as, for example, silicon oxide. In some example embodiments, at least two of the first layer 844 a, the second layer 844 b, and the third layer 844 c of the second intermediate layer 842 a may be formed of different materials.
The second intermediate layer 842 a may include a maximum thickness portion including the first to third layers 844 a, 844 b, and 844 c, an intermediate thickness portion including the second and third layers 844 b and 844 c, and a minimum thickness portion including the third layer 844 c. According to the thickness difference depending on the position of the second intermediate layer 842 a, there may be a difference in thickness between the first to third regions 832A, 832B, and 832C of the insulating structure 832 a.
A center portion of each of the first color filters 570 a may be disposed on the first region 832A of the insulating structure 832 a, a center portion of each of the second color filters 570 b may be disposed on the second region 832B of the insulating structure 832 a, and the third color filters 570 c, an edge portion of each of the first color filters 570 a, an edge portion of each of the second color filters 570 b, and the grid structure 560 may be disposed on the second region 832B of the insulating structure 832 a.
In the insulating structure 832 a, a region in which the thickness changes, that is, a first boundary region 832 br 1 between the first region 832A and the second region 832B may vertically overlap the first color filters 570 a and may be spaced apart from the grid structure 560, and a second boundary region 832 br 2 between the second region 832B and the third region 832C vertically overlap the second color filters 570 b and may be spaced apart from the grid structure 560.
In the diagram viewed from above, the first boundary region 832 br 1 between the first region 832A and the second region 832B may be described as a boundary region between a center portion and an edge portion in each of the first color filters 570 a, and the second boundary region 832 br 2 between the second region 832B and the third region 832C may be described as a boundary region between a boundary region between a central portion and an edge portion in each of the second color filters 570 b.
The image sensor 1 g may include the insulating structure 832 a in which the thickness of the first to third regions 832A, 832B, and 833C changes according to a change in the thickness of the second intermediate layer 842 a. Accordingly, since the image sensor 1 g may include the insulating structure 832 a having a thickness optimized according to wavelengths of the first, second and third color filters 570 a, 570 b, and 570 c, by improving transmittance of light passing through the insulating structure 832 a through the first, second, and third color filters 570 a, 570 b, and 570 c, that is, the blue color filter 570 a, the green color filter 570 b, and the red color filter 570 c, sensitivity of the image sensor 1 g may improve.
In the description below, a modified example of the insulating structure 832 a will be described with reference to FIG. 34 .
FIG. 34 is a cross-sectional diagram illustrating regions taken along lines Ig-Ig′ and IIg-IIg′ in FIG. 32 , illustrating a modified example of the image sensor in some example embodiments.
Referring to FIGS. 32 and 34 , an insulating structure 832 b as illustrated in FIG. 34 which may replace the insulating structure 732 a in FIG. 30 may include a lower layer 134, intermediate layers 836 b and 842 b, and an upper layer 148 stacked in sequence. The lower layer 134 and the upper layer 148 may be substantially the same as the examples described with reference to FIG. 2 . The intermediate layers 836 b and 842 b may include a first intermediate layer 836 b and a second intermediate layer 842 b stacked in sequence. The first intermediate layer 836 b may include substantially the same material as that of the first intermediate layer 136 a in FIG. 2 , such as, for example, a high-κ material such as hafnium oxide, and the second intermediate layer 842 b may include silicon oxide.
As described with reference to FIG. 34 , the insulating structure 832 b may include the first region 832A, the second region 832B having a thickness greater than the thickness of the first region 832A, and a third region 832C having a thickness greater than the thickness of the second region 832B.
In the third region 832C of the insulating structure 832 b, the first intermediate layer 836 b may include a first layer 838 a, a second layer 838 b and a third layer 838 c stacked in sequence, in the second region 832B of the insulating structure 832 b, the first intermediate layer 836 b may include the second layer 838 b and the third layer 838 c stacked in sequence, and in the first region 832A of the insulating structure 832 b, the first intermediate layer 836 b may include the third layer 838 c.
In some example embodiments, the first layer 838 a, the second layer 838 b, and the third layer 838 c of the first intermediate layer 836 b may include the same material, such as, for example, hafnium oxide. In some example embodiments, at least two of the first layer 838 a, the second layer 838 b, and the third layer 838 c of the first intermediate layer 836 b may be formed of different materials.
The first intermediate layer 836 b may include a maximum thickness portion including the first to third layers 838 a, 838 b, and 838 c, an intermediate thickness portion including the second and third layers 838 b and 838 c, and a minimum thickness portion including the third layer 838 c. According to the thickness difference depending on the position of the first intermediate layer 836 b, there may be a difference in thickness between the first to third regions 832A, 832B, and 832C of the insulating structure 832 b as in FIG. 33 .
In some example embodiments, the separation structure 115 in FIGS. 33 and 34 may be modified to form a separation structure 115′ including a first layer 116 a′, a second layer 116 b′ and a third layer 116 c′ as in FIG. 4A, and the insulating structure (832 a in FIG. 33 or 832 b in FIG. 34 ) including the first region 832A, the second region 832B, and the third region 832C having different thicknesses as in FIGS. 33 and 34 may be modified to form an insulating structure including a portion extending into the opening 112′ (in FIG. 4A) extending in a direction from the second surface 106 s 2 of the second substrate 106 toward the first surface 106 s 1 as in FIG. 4A.
In some example embodiments, in FIGS. 33 and 34 , the second surface 106 s 2 of the second substrate 106 may be substantially planar, but as described with reference to FIGS. 4C and 4D, the second surface 106 s 2 may be modified to form the second surface 106 s 2′ having an uneven structure as described with reference to FIGS. 4C and 4D.
In the description below, a modified example of the image sensor 1 e described with reference to FIGS. 19 to 23 will be described with reference to FIGS. 35 and 36 .
FIG. 35 is a diagram illustrating an image sensor according to some example embodiments, viewed from above, and FIG. 36 is a cross-sectional diagram illustrating regions taken along lines Ih-Ih′ and IIh-IIh′.
Referring to FIGS. 35 and 36 , an image sensor 1 h in a modified example may include a grid structure 960 which may replace the grid structure 560 (in FIGS. 19 and 20 ) described above, and an insulating structure 532 a′ which may replace the insulating structure 532 a (in FIGS. 19 and 20 ) described above.
In the diagram viewed from above, the grid structure 560 described with reference to FIGS. 19 and 20 may be replace with a grid structure 960 further including a portion crossing each of the color filters 570 in the X direction and the Y direction. For example, the grid structure 960 may include a first portion 960 a crossing a region between the color filters 570 and a second portion 960 b crossing each of the color filters 570 in the X and Y directions. The second portion 960 b of the grid structure 960 may cross one of the first color filters 570 a in the X direction.
The insulating structure 532 a′ may include a first region 532A′ and a second region 532B′ having a thickness greater than that of the first region 532A′ as described with reference to FIG. 20 .
The third color filters 570 c, the second color filters 570 b, portions adjacent to the grid structure 960 in the first color filters 570 a, and the grid structure 960 may be disposed on the second region 532B′ of the insulating structure 532 a′, and the central portion of each of the first color filters 570 a surrounded by the grid structure 960 in the diagram viewed from above may be disposed on the first region 532A′ of the insulating structure 532 a′.
In the insulating structure 532 a′, a region where the thickness changes, that is, a boundary region 532 br′ between the first region 532A′ and the second region 532B′ may vertically overlap the first color filters 570 a and may be spaced apart from the grid structure 960.
In some example embodiments, the thickness of the insulating structure 532 a′ may change according to a change in the thickness of the second intermediate layer 542 a as in FIG. 20 .
In some example embodiments, the thickness of the insulating structure 532 a′ may change according to a change in the thickness of the first intermediate layer 536 b as in FIG. 21 .
In the description below, a modified example of an image sensor if described with reference to FIGS. 24 to 28 will be described with reference to FIGS. 37 and 38 .
FIG. 37 is a diagram illustrating an image sensor according to some example embodiments, viewed from above, and FIG. 38 is a cross-sectional diagram illustrating regions taken along lines Ii-Ii′ and IIi-IIi′.
Referring to FIGS. 37 and 38 , the image sensor 1 i in the modified example may include a grid structure 960 which may replace the grid structure 560 (in FIGS. 24 and 25 ) described above, and an insulating structure 632 a′ which may replace the insulating structure 632 a (in FIGS. 24 and 25 ) described above.
In the diagram viewed from above, the grid structure 560 described with reference to FIGS. 24 and 25 may be replaced with the grid structure 960 described with reference to FIGS. 35 and 36 .
The insulating structure 632 a′ may include a first region 632A′ and a second region 632B′ having a thickness smaller than that of the first region 632A′.
The first color filters 570 a, the second color filters 570 b, portions adjacent to the grid structure 960 in the third color filters 570 c, and the grid structure 960 may be disposed on the second region 632B′ of the insulating structure 632 a′, and a central portion of each of the third color filters 570 c surrounded by the grid structure 960 in the diagram viewed from above may be disposed on the first region 632A′ of the insulating structure 632 a′.
In the insulating structure 632 a′, a region in which the thickness changes, that is, a boundary region 632 br′ between the first region 632A′ and the second region 632B′ may vertically overlap the third color filters 570 c and may be spaced apart from the grid structure 960.
In some example embodiments, the thickness of the insulating structure 632 a′ may change according to a change in the thickness of the second intermediate layer 642 a as in FIG. 25 .
In some example embodiments, the thickness of the insulating structure 632 a′ may change according to a change in the thickness of the first intermediate layer 636 b as in FIG. 26 .
In the description below, a modified example of the image sensor 1 fa described with reference to FIGS. 29 to 31 will be described with reference to FIGS. 39 and 40 .
FIG. 39 is a diagram illustrating an image sensor according to some example embodiments, viewed from above, and FIG. 40 is a cross-sectional diagram illustrating regions taken along lines Ij-Ij′ and IIj-IIj′.
Referring to FIGS. 39 and 40 , an image sensor 1 j in the modified example may include a grid structure 960 which may replace the grid structure 560 (in FIGS. 29 and 30 ) described above, and an insulating structure 732 a′ which may replace the insulating structure 732 a (in FIGS. 29 and 30 ) described above.
In the diagram viewed from above, the grid structure 560 described with reference to FIGS. 24 and 25 may be replaced with the grid structure 960 described with reference to FIGS. 35 and 36 .
The insulating structure 732 a′ may include a first region 732A′ and a second region 732B′ having thickness greater than that of the first region 732A′ described with reference to FIG. 30 .
The second color filters 570 b, portions of the third color filters 570 c adjacent to the grid structure 960, portions of the first color filters 570 a adjacent to the grid structure 960, and the grid structure 960 may be disposed on the second region 732B′ of the insulating structure 732 a′, a central portion of each of the third color filters 570 c surrounded by the grid structure 960 in the diagram viewed from above may be disposed on the third region 732C′ of the insulating structure 732 a′, and a central portion of each of the first color filters 570 a surrounded by the grid structure 960 may be disposed on the first region 732A′ of the insulating structure 732 a′.
In the insulating structure 732 a′, a region in which the thickness changes, that is, a first boundary region 732 br 1′ between the first region 732A′ and the second region 732B′, may vertically overlap the first color filters 570 a may be spaced apart from the grid structure 960, and a second boundary region 732 br 2′ between the second region 732B′ and the third region 732C′ may vertically overlap the third color filters 570 c and may be spaced apart from the grid structure 960.
In some example embodiments, the thickness of the insulating structure 732 a′ may change according to a change in the thickness of the second intermediate layer 742 a as in FIG. 30 .
In some example embodiments, the thickness of the insulating structure 732 a′ may change according to a change in the thickness of the first intermediate layer 736 b as in FIG. 31 .
In the description below, a modified example of an image sensor 1 g described with reference to FIGS. 32 to 34 will be described with reference to FIGS. 41 and 42 .
FIG. 41 is a diagram illustrating an image sensor according to some example embodiments, viewed from above, and FIG. 42 is a cross-sectional diagram illustrating regions taken along lines Ik-Ik′ and Ilk-Ilk′.
Referring to FIGS. 41 and 42 , the image sensor 1 k in the modified example may include a grid structure 960 which may replace the grid structure 560 (in FIGS. 32 and 33 ) described above, and an insulating structure 832 a′ which may replace the insulating structure 832 a (in FIGS. 32 and 33 ) described above.
In the diagram viewed from above, the grid structure 560 described with reference to FIGS. 32 and 33 may be replaced with the grid structure 960 described with reference to FIGS. 35 and 36 .
The insulating structure 832 a′ may include a first region 832A′, a second region 832B′ having a thickness greater than that of the first region 832A′, and a third region 832C′ having a thickness greater than a thickness of the second region 832B′ as described with reference to FIG. 33 .
The third color filters 570 c, portions of the second color filters 570 b adjacent to the grid structure 960, portions of the first color filters 570 a adjacent to the grid structure 960, and the grid structure 960 may be disposed on the third region 832C′ of the insulating structure 832 a′, a central portion of each of the second color filters 570 b surrounded by the grid structure 960 in the diagram viewed from above may be disposed on the second region 832B′ of the insulating structure 832 a′, and a central portion of each of the first color filters 570 a surrounded by the grid structure 960 in the diagram viewed from above may be disposed on the first region 832A′ of the insulating structure 832 a′.
In the insulating structure 832 a′, the region in which the thickness changes, that is, the first boundary region 832 br 1′ between the first region 832A′ and the second region 832B′, may vertically overlap the first color filters 570 a and may be spaced apart from the grid structure 960, and a second boundary region 832 br 2′ between the second region 832B′ and the third region 832C′ may vertically overlap the second color filters 570 b and may be spaced apart from the grid structure 960.
In some example embodiments, the thickness of the insulating structure 832 a′ may change according to a change in the thickness of the second intermediate layer 842 a as in FIG. 33 .
In some example embodiments, the thickness of the insulating structure 832 a′ may change according to a change in the thickness of the first intermediate layer 836 b as in FIG. 34 .
In the description below, with reference to FIG. 43 , an image sensor in some example embodiments will be described.
FIG. 43 is a diagram illustrating an image sensor according to some example embodiments, viewed from above.
Referring to FIG. 43 , the image sensor 11 may include the first chip structure 3 substantially the same as the example described with reference to FIG. 2 .
The image sensor 11 may further include a second chip structure 1003 on the first chip structure 3. The second chip structure 1003 may be configured as an image sensor chip.
The second chip structure 1003 may include a second substrate 106 having a first surface 106 s 1 and a second surface 106 s 2 opposing each other, a device isolation layer 118 disposed on the first surface 106 s 1 of the second substrate 106 and defining an active region, a second circuit device 124 and a second wiring structure 127 disposed between the first surface 106 s 1 of the second substrate 106 and the first chip structure 3, and a second insulating layer 130 covering the second circuit device 124 and the second wiring structure 127 between the first surface 106 s 1 of the second substrate 106 and the first chip structure 3. The first surface 106 s 1 of the second substrate 106 may oppose the first chip structure 3. The second substrate 106 may be configured as a semiconductor substrate. For example, the second substrate 106 may be configured as a substrate formed of a semiconductor material, such as, for example, a single crystal silicon substrate.
The image sensor 11 may further include photoelectric conversion devices PD described with reference to FIG. 2 .
The second chip structure 1003 may further include through-electrode structures 1115. The through-electrode structures 1115 may include a conductive pattern 1115 b and an insulating spacer 1115 a on a side surface of the conductive pattern 1115 b. The through-electrode structures 1115 may be disposed between the photoelectric conversion devices PD and may penetrate the second substrate 106.
The second chip structure 1003 may further include an insulating structure 1032 a having regions of different thickness from each other.
The second chip structure 1003 may further include an insulating layer 1065 disposed on the insulating structure 1032 a and color filters 1070 embedded in the insulating layer 1065. The color filters 1070 may include a blue color filter 1070 a allowing light of a blue wavelength to pass and to reach the photoelectric conversion device PD, and a red color filter 1070 b allowing light of red wavelength to pass and to reach the photoelectric conversion device PD.
The second chip structure 1003 may include first electrodes 1076 disposed on the insulating layer 1065, an insulating layer 1074 surrounding side surfaces of the first electrodes 1076, and rear contact plugs 1072 electrically connecting the first electrodes 1076 to the conductive patterns 1115 b. The first electrodes 1076 may include portions overlapping the color filters 1070.
The first electrodes 1076 may be configured as transparent electrodes. For example, the first electrodes 1076 may be formed of a transparent conductive material such as ITO, IZO, ZnO, SnO2, antimony-doped tin oxide (ATO), Al-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), TiO₂, or fluorine-doped tin oxide (FTO).
The second chip structure 1003 may include a photoelectric layer 1082 disposed on the first electrodes 1076, a second electrode 1084 disposed on the photoelectric layer 1082, and microlenses 1090 disposed on the second electrode 1084.
In some example embodiments, the photoelectric layer 1082 may be configured as an organic photoelectric layer. For example, the photoelectric layer 1082 may be configured as an organic photoelectric layer formed of an organic material causing photoelectric change only in light of a specific wavelength. For example, the photoelectric layer 1082 may include a p-type layer in which main carriers are holes and an n-type layer in which main carriers are electrons. The photoelectric layer 1082 may generate electric charges in response to light of a specific wavelength band, and in some example embodiments, the photoelectric layer 1082 may generate electric charges in response to light of a green. In this case, light of colors other than green (e.g., blue and red) may be transmitted to the photoelectric conversion devices PD through the color filters 1070.
The second electrode 1084 may be formed of a transparent electrode. For example, the second electrode 1084 may be formed of a transparent conductive material such as ITO, IZO, ZnO, SnO2, antimony-doped tin oxide (ATO), Al-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), TiO₂, or fluorine-doped tin oxide (FTO).
In some example embodiments, the photoelectric layer 1082 and the first and second electrodes 1076 and 1084 may be included in an organic photoelectric device or an organic photoelectric conversion device. Charges generated in response to light of a green in the photoelectric layer 1082 may be accumulated in storage node regions through the first electrodes 1076, the rear contact plugs 1072, the conductive patterns 1115 b in the through-electrode structures 1115, and the front contact plugs 1010.
The insulating structure 1032 a may include a plurality of layers stacked in sequence. The insulating structure 1032 a may include an anti-reflective layer providing incident light to travel to the photoelectric conversion devices PD with high transmittance by adjusting a refractive index. For example, the insulating structure 1032 a may include at least three layers. Accordingly, the insulating structure 1032 a may be referred to as an anti-reflective structure.
The insulating structure 1032 a may include a lower layer 1034, an intermediate layer 1036 a and 1042 a on the lower layer 1034, and an upper layer 1048 on the intermediate layer 1036 a and 1042 a.
The lower layer 1034 and the upper layer 1048 may be substantially the same as the lower layer 134 and the upper layer 148 described with reference to FIG. 2 . For example, the upper layer 1048 may include a first layer 1050 a and a second layer 1050 b stacked in sequence.
The intermediate layers 1036 a and 1042 a may include a first intermediate layer 1036 a and a second intermediate layer 1042 a stacked in sequence.
The first intermediate layer 1036 a may be substantially the same as the first intermediate layer 136 a described with reference to FIG. 2 .
The second intermediate layer 1042 a may be substantially the same as the second intermediate layer 142 a described with reference to FIG. 2 . For example, the second intermediate layer 1042 a may include a first layer 1044 a and a second layer 1044 b stacked in sequence.
The insulating structure 1032 a may include a first region 1032A having a first thickness and a second region 1032B having a second thickness greater than the first thickness.
In the second region 1032B of the insulating structure 1032 a, the second intermediate layer 1042 a may include a first layer 1044 a and a second layer 1044 b stacked in sequence, and in the first region 1032A of the insulating structure 1032 a, the second intermediate layer 1042 a may include the second layer 1044 b. Accordingly, the second intermediate layer 1042 a may include a relatively thick portion including the first and second layers 1044 a and 1044 b and a relatively thin portion including the second layer 1044 b. According to the thickness difference depending on the position of the second intermediate layer 1042 a, there may be a difference in thickness between the first and second regions 1032A and 1032B of the insulating structure 1032 a.
In the insulating structure 1032 a, the first region 1032A may be disposed below the blue color filter 1070 a, and the second region 1032B may be disposed below the red color filter 1070 b.
In the insulating structure 1032 a, a boundary region 1032 br between the first region 1032A and the second region 1032B in which the thickness of the insulating structure 1032 a changes may be disposed below an edge portion of the blue color filter 1070 a.
In the description below, an image sensor in some example embodiments will be described with reference to FIG. 44 .
FIG. 44 is a diagram illustrating an image sensor according to some example embodiments, viewed from above.
Referring to FIG. 44 , the boundary region 1032 br between the first region 1032A and the second region 1032B in which the thickness of the insulating structure 1032 a described with reference to FIG. 43 changes may be modified to form a boundary region 1032 br′ disposed below the edge portion of the red color filter 1070 b.
In the description below, with reference to FIG. 45 , an image sensor in some example embodiments will be described.
FIG. 45 is a diagram illustrating an image sensor according to some example embodiments, viewed from above.
Referring to FIG. 45 , the boundary region 1032 br between the first region 1032A and the second region 1032B, in which the thickness of the insulating structure 1032 a described with reference to FIG. 43 changes may be modified to not vertically overlap the color filters 1070. For example, the rear contact plugs 1072 may penetrate through the boundary region between the first region 1032A and the second region 1032B in which the thickness of the insulating structure 1032 a changes.
An image sensor in some example embodiments will be described with reference to FIGS. 46 and 47 .
FIGS. 46 and 47 are graphs illustrating properties of an image sensor according to some example embodiments. FIG. 48 is a flowchart illustrating a method of manufacturing an image sensor according to some example embodiments.
Referring to FIGS. 46 and 47 , the line A in FIG. 46 may indicate transmittance of light in the image sensor in which the thickness of the insulating structure, which may be configured as an anti-reflective layer, is constant, and the line A in FIG. 47 may indicate the amount of light absorbed by the photodiode, light which passes through an insulating structure having a constant thickness.
The line B in FIG. 46 may indicate transmittance of light passing through the first region 332A of the insulating structure 332 a having a first thickness below the blue color filter 170 a of the image sensor 1 c described with reference to FIGS. 10 and 11 , and the line B in FIG. 47 may indicate the amount of light absorbed by the photodiode PD, light which passes through the first region 332A of the insulating structure 332 a having a first thickness below the blue color filter 170 a of the image sensor 1 c.
The line C in FIG. 46 may indicate transmittance of light passing through the second region 332B of the insulating structure 332 a having a second thickness below the green color filter 170 b of the image sensor 1 c, and the line C in FIG. 47 may indicate the amount of light absorbed by the photodiode PD, light which passes through the second region 332B of the insulating structure 332 a below the green color filter 170 b of the image sensor 1 c.
The line D in FIG. 46 may indicate transmittance of light passing through the third region 332C of the insulating structure 332 a having a third thickness below the red color filter 170 c of the image sensor 1 c, and the line D in FIG. 47 may indicate the amount of light absorbed by the photodiode PD, light which passes through the third region 332C of the insulating structure 332 a below the red color filter 170 c of the image sensor 1 c.
As in FIGS. 46 and 47 , by varying the thickness of the intermediate layers 336 a and 342 a of the insulating structure 332 a depending on positions, transmittance of light passing through the insulating structure 332 a may be optimized depending on the color type of the color filters 170, and accordingly, the amount of light absorbed by the photodiode PD below the blue color filter 170 a may improve by about 4.7%, and the amount of light absorbed by the photodiode PD below the red color filter 170 c may improve by about 1.3%.
Accordingly, sensitivity of the image sensors in some example embodiments may improve.
Hereinafter, an example method of forming the insulating structures described with reference to FIGS. 1 to 45 will be described.
In the description below, a method of manufacturing an image sensor according to some example embodiments will be described with reference to FIG. 48 .
FIG. 48 is a flowchart illustrating processes of a method of manufacturing an image sensor according to some example embodiments.
Referring to FIG. 48 , in the image sensor, forming an insulating structure which may be configured as an anti-reflective layer may include forming a lower layer (S10), forming an intermediate layer including two or more regions having different thicknesses (S20), and forming an upper layer (S40).
In the description below, examples of a method of forming the insulating structures described above with reference to FIGS. 1 to 45 , such as, for example, the insulating structure 132 a in FIG. 2 and the insulating structure 132 b in FIG. 3 , will be described.
An example of a method of forming the insulating structure 132 a described with reference to FIG. 2 will be described with reference to FIGS. 49 and 50A to 50C.
FIG. 49 is a flowchart illustrating an example of a method of manufacturing an image sensor according to some example embodiments, and FIGS. 50A to 50C are cross-sectional diagrams illustrating regions taken along lines Ia-Ia′ and IIa-IIa′ in FIG. 1 .
Referring to FIGS. 49 and 50A, a lower layer 134 may be formed (S10). The lower layer 134 may be formed on the second surface 106 s 2 of the second substrate 106 (in FIG. 2 ).
A first intermediate layer 136 a may be formed (S27). The first intermediate layer 136 a may be formed on the lower layer 134.
Referring to FIGS. 49 and 50B, a first layer 144 a may be formed on the first intermediate layer 136 a, a mask pattern 139 having an opening may be formed on the first layer 144 a, and the first layer 144 a may be etched using the mask pattern 139 as an etch mask. Accordingly, the first layer 144 a described with reference to FIG. 2 may be formed.
Referring to FIGS. 49 and 50C, a second layer 144 b covering the first layer 144 a may be formed on the first intermediate layer 136 a. The first and second layers 144 a and 144 b may be included in the second intermediate layer 142 a described with reference to FIG. 2 . Accordingly, the second intermediate layer 142 a including two or more regions having different thicknesses may be formed (S32).
An upper layer 148 may be formed (S40). The upper layer 148 may include a first upper layer 150 a and a second upper layer 150 b stacked in sequence on the second intermediate layer 142 a. Accordingly, the insulating structure 132 a as illustrated in FIG. 2 may be formed.
In the description below, examples of a method of forming the insulating structures described above with reference to FIGS. 1 to 45 , such as, for example, the insulating structure 132 a in FIG. 2 and the insulating structure 132 b in FIG. 3 , will be described.
In the description below, an example of a method of forming the insulating structure 132 b described with reference to FIG. 3 will be described with reference to FIGS. 51 and 52A to 52C.
FIG. 51 is a flowchart illustrating an example of a method of manufacturing an image sensor according to some example embodiments, and FIGS. 52A to 52C are cross-sectional diagrams illustrating regions taken along lines Ia-Ia′ and IIa-IIa′ in FIG. 1 .
Referring to FIGS. 51 and 52A, the lower layer 134 may be formed (S10). The lower layer 134 may be formed on the second surface 106 s 2 of the second substrate 106 (in FIG. 2 ).
A first layer 138 a may be formed on the lower layer 134, a mask pattern 139′ having an opening may be formed on the first layer 138 a, and the first layer 138 a may be etched using the mask pattern 139′ as an etch mask. Accordingly, the first layer 138 a described with reference to FIG. 3 may be formed.
Referring to FIGS. 51 and 52B, a second layer 138 b covering the first layer 138 a may be formed on the lower layer 134. The first and second layers 138 a and 138 b may be included in the first intermediate layer 136 b described with reference to FIG. 3 . Accordingly, the first intermediate layer 136 b including two or more regions having different thicknesses may be formed (S25).
Referring to FIGS. 51 and 52C, a second intermediate layer 142 b may be formed on the first intermediate layer 136 b (S30). An upper layer 148 may be formed (S40). The upper layer 148 may include a first upper layer 150 a and a second upper layer 150 b stacked in sequence on the second intermediate layer 142 b. Accordingly, the insulating structure 132 b as illustrated in FIG. 3 may be formed.
According to the aforementioned example embodiments, the insulating structure including the anti-reflective layer may include a plurality of layers, and an intermediate layer of the plurality of layers may include two or more regions having different thicknesses from each other. As described above, the insulating structure including the intermediate layer including two or more regions having different thicknesses may improve transmittance of light passing through the insulating structure through color filters, thereby improving sensitivity of the image sensor.
While some example embodiments have been illustrated and described above, it will be configured as apparent to those skilled in the art that modified examples and variations could be made without departing from the scope of the present inventive concepts as defined by the appended claims.

Claims

What is claimed is:

1. An image sensor, comprising:

a substrate having a first surface and a second surface opposing each other;

photodiodes in the substrate;

circuit and wiring structures below the first surface of the substrate;

an insulating structure on the second surface of the substrate;

a plurality of color filters on the insulating structure; and

a grid structure on the insulating structure,

wherein at least a portion of the grid structure is between adjacent color filters of the plurality of color filters,

wherein the plurality of color filters include a first color filter and a second color filter configured to selectively transmit light of different wavelength spectra associated with different colors,

wherein the insulating structure includes

a first region having a first thickness,

a second region having a second thickness different from the first thickness, and

a boundary region between the first region and the second region, the boundary region vertically overlapping with the first color filter and is horizontally offset from a vertical central axis of the grid structure.

2. The image sensor of claim 1, wherein, in the insulating structure, the boundary region between the first region and the second region does not vertically overlap the grid structure.

3. The image sensor of claim 1,

wherein the first thickness is smaller than the second thickness,

wherein, in the insulating structure, the first region vertically overlaps the first color filter and does not vertically overlap the second color filter,

wherein the first color filter is a blue color filter configured to selectively transmit blue light, and

wherein the second color filter is a green color filter configured to selectively transmit green light.

4. The image sensor of claim 1,

wherein the plurality of color filters further include a third color filter configured to selectively transmit a wavelength spectrum of light that is different from wavelength spectra of light selectively transmitted by either of the first color filter or the second color filter,

wherein the first color filter is a blue color filter configured to selectively transmit blue light,

wherein the second color filter is a green color filter configured to selectively transmit green light,

wherein the third color filter is a red color filter configured to selectively transmit red light, and

wherein, in the insulating structure, the first region vertically overlaps the first color filter, and the second region vertically overlaps each of the grid structure, the second color filter, and the third color filter.

5. The image sensor of claim 4, wherein each color filter of the plurality of color filters vertically overlaps two or more of the photodiodes.

6. The image sensor of claim 5, wherein the grid structure includes

a first portion between color filters configured to selectively transmit light of wavelength spectra associated with different colors among the plurality of color filters, and

a second portion crossing each color filter of the plurality of color filters in a first direction and a second direction perpendicular to the first direction.

7. The image sensor of claim 1,

wherein the third color filter is a red color filter configured to selectively transmit red light,

wherein the insulating structure further includes a third region having a third thickness greater than the second thickness,

wherein the first region vertically overlaps at least a portion of the first color filter,

wherein the second region vertically overlaps at least the second color filter and the grid structure, and

wherein the third region vertically overlaps at least a portion of the third color filter.

8. The image sensor of claim 7, wherein each color filter of the plurality of color filters vertically overlaps two or more of the photodiodes.

9. The image sensor of claim 8, wherein the grid structure includes

10. The image sensor of claim 1,

wherein the color filters further include a third color filter configured to selectively transmit a wavelength spectrum of light that is different from wavelength spectra of light selectively transmitted by either of the first color filter or the second color filter,

wherein the second region vertically overlaps at least a portion of the second color filter, and

wherein the third region vertically overlaps at least the grid structure and the third color filter.

11. The image sensor of claim 10, wherein each of the plurality of color filters vertically overlaps two or more of the photodiodes.

12. The image sensor of claim 10, wherein the grid structure includes

13. The image sensor of claim 1,

wherein the insulating structure includes a sequential stack of a lower layer, an intermediate layer and an upper layer,

wherein the lower layer has a substantially uniform thickness,

wherein the upper layer has a substantially uniform thickness, and

wherein the intermediate layer includes two or more regions having different thicknesses from each other.

14. An image sensor, comprising:

a substrate having a first surface and a second surface opposing each other;

photodiodes in the substrate;

circuit and wiring structures below the first surface of the substrate;

an insulating structure on the second surface of the substrate; and

a plurality of color filters on the insulating structure,

wherein the lower layer has a substantially uniform thickness,

wherein the upper layer has a substantially uniform thickness, and

15. The image sensor of claim 14,

wherein the intermediate layer includes a first intermediate layer and a second intermediate layer on the first intermediate layer,

wherein the first intermediate layer includes two or more regions having different thicknesses from each other, and

wherein the second intermediate layer has a substantially uniform thickness.

16. The image sensor of claim 14,

wherein the second intermediate layer includes two or more regions having different thicknesses from each other, and

wherein the first intermediate layer has a substantially uniform thickness.

17. The image sensor of claim 14,

wherein the intermediate layer includes a first intermediate layer and a second intermediate layer on the first intermediate layer;

wherein the upper layer includes at least two layers,

wherein one of the first and second intermediate layers includes two or more regions having different thicknesses from each other, and

wherein a first upper layer of the at least two layers includes the same material as a material of the lower layer, and a second upper layer of the at least two layers includes the same material as a material of the first intermediate layer.

18. The image sensor of claim 14,

wherein the substrate includes one or more inner sidewall surfaces at least partially defining an opening extending into the substrate from the second surface of the substrate,

wherein the lower layer of the insulating structure further includes a portion extending into the opening.

19. The image sensor of claim 14, wherein the second surface of the substrate has an uneven structure.

20. An image sensor, comprising:

a substrate having a first surface and a second surface opposing each other;

photodiodes in the substrate;

a separation structure between the photodiodes in the substrate;

circuit and wiring structures below the first surface of the substrate;

an insulating structure on the second surface of the substrate;

a plurality of color filters on the insulating structure; and

a grid structure on the insulating structure,

wherein the portion of the grid structure vertically overlaps at least a portion of the separation structure,

wherein the plurality of color filters include a blue color filter configured to selectively transmit blue light, a green color filter configured to selectively transmit green light, and a red color filter configured to selectively transmit red light,

wherein the lower layer has a substantially uniform thickness,

wherein the upper layer has a substantially uniform thickness,

wherein the intermediate layer includes two or more regions having different thicknesses from each other,

wherein a minimum thickness of a first portion of the insulating structure vertically overlapping the blue color filter is smaller than a maximum thickness of a second portion of the insulating structure vertically overlapping the red color filter, and

wherein the lower surface of the grid structure is flat such that the lower surface of the grid structure at least partially defines a plane extending parallel to at least one of the first surface or the second surface of the substrate.