US20220352395A1 - Optical sensor with light pipe and method of manufacture - Google Patents
Optical sensor with light pipe and method of manufacture Download PDFInfo
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- US20220352395A1 US20220352395A1 US17/721,274 US202217721274A US2022352395A1 US 20220352395 A1 US20220352395 A1 US 20220352395A1 US 202217721274 A US202217721274 A US 202217721274A US 2022352395 A1 US2022352395 A1 US 2022352395A1
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- United States
- Prior art keywords
- light
- layer
- optical sensor
- transmissive material
- optical
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- H01L31/02327—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
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- H01L31/0203—
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- H01L31/02164—
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- H01L31/02165—
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- H01L31/18—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
- H10F77/337—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0273—Diffusing elements; Afocal elements characterized by the use
- G02B5/0278—Diffusing elements; Afocal elements characterized by the use used in transmission
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
Definitions
- the present device relates to the field of optical sensor and methods of manufacture therefor.
- FIG. 1 depicts a conventional optical sensor 100 .
- the optical sensor 100 consists of a substrate layer 102 with a silicon chip 104 in contact with a top surface of the substrate layer 102 .
- a sensing area 106 is coupled with the silicon chip 104 and the silicon chip is coupled with the substrate 102 via one or more electrical couplings 108 .
- the substrate 102 , silicon chip 104 , sensing area 106 and electrical couplings 108 are covered with a light transmissive (optically inert or substantially optically inert) material 110 .
- a housing 112 Surrounding the substrate 102 , the silicon chip 104 , the sensing area, electrical couplings 108 and light transmissive material 110 , is a housing 112 that is separated from the interior structure by a gap 114 .
- the housing has a relatively thin thickness 116 and is only as thick as required to block undesired light from reaching the sensing area 106 .
- manufacture can be complex and such structure can allow inadvertent triggering of the sensing area 106 . What is needed is a sensor with an alternate structure such as an optical sensor with light pipe and method of manufacture.
- FIG. 1 depicts a prior art embodiment of an optical sensor.
- FIG. 2 depicts an embodiment of an optical sensor with a light pipe.
- FIG. 3 depicts an embodiment of an optical sensor with a light pipe and filtering component.
- FIG. 4 depicts an embodiment of an optical sensor with a light pipe and light focusing component.
- FIG. 5 depicts an embodiment of an optical sensor with a light pipe and a light spreading component.
- FIG. 6 depicts an embodiment of a method of manufacture of the optical sensor of FIGS. 1-5 .
- FIG. 2 depicts an embodiment of an optical sensor 100 with a light blocking optical layer 202 .
- the optical sensor 100 can comprise a substrate layer 102 with a silicon chip 104 in contact with a top surface of the substrate layer 102 .
- a sensing area 106 can be coupled and/or integral with the silicon chip 104 and the silicon chip can be coupled with the substrate 102 via one or more electrical couplings 108 .
- the sensor 100 can comprise a light blocking layer 202 defining a light pipe 204 that extends from the top surface of the light blocking material 202 to the surface of the silicon chip 104 and/or substrate 102 .
- the light pipe 204 can be filled or partially filled with a light transmissive (optically inert or substantially optically inert) material 110 .
- FIG. 3 depicts an embodiment of an optical sensor 100 with a light filtering optical layer 302 .
- the optical sensor 100 can comprise a substrate layer 102 with a silicon chip 104 in contact with a top surface of the substrate layer 102 .
- a sensing area 106 can be coupled and/or integral with the silicon chip 104 and the silicon chip can be coupled with the substrate 102 via one or more electrical couplings 108 .
- the sensor 100 can comprise a light blocking layer 202 defining a light pipe 204 that extends from the top surface of the light blocking material 202 to the surface of the silicon chip 104 and/or substrate 102 .
- the light pipe 204 can be filled or partially filled with a light transmissive (optically inert or substantially optically inert) material 110 and/or a light filtering material 302 .
- the light filtering optical layer 302 can comprise any known convenient and/or desired material that is adapted and/or configured to selectively reflect, absorb and/or prohibit passage through the light filtering optical layer 302 of light having any desired wavelength and/or frequency and/or wavelength range and/or frequency range and/or wavelength ranges and/or frequency ranges. In operation, light of only desired wavelength(s) and/or frequency(ies) can pass through the light pipe 204 /light filtering optical layer 302 and reach and/or be detected by the sensing area 106 .
- the light filtering optical layer 302 can be within the light pipe 204 .
- the light filtering optical layer 402 can be located above a light transmissive material 110 and one or more additional layers or gaps can be positioned between the light transmissive material 110 and the light filtering optical layer 302 .
- the light filtering optical layer 302 can be continuous above the light transmissive material 110 and/or sensing area 106 .
- the light filtering optical layer 302 can be other than continuous and/or be periodically positioned above the light transmissive material 110 and/or sensing area 106 .
- FIG. 4 depicts an embodiment of an optical sensor 100 with a light focusing optical layer 402 .
- the optical sensor 100 can comprise a substrate layer 102 with a silicon chip 104 in contact with a top surface of the substrate layer 102 .
- a sensing area 106 can be coupled and/or integral with the silicon chip 104 and the silicon chip can be coupled with the substrate 102 via one or more electrical couplings 108 .
- the sensor 100 can comprise a light blocking layer 202 defining a light pipe 204 that extends from the top surface of the light blocking material 202 to the surface of the silicon chip 104 and/or substrate 102 .
- the light pipe 204 can be filled or partially filled with a light transmissive (optically inert or substantially optically inert) material 110 and/or a light focusing layer 402 .
- the light focusing layer 402 can comprise any known convenient and/or desired material that is adapted and/or configured to selectively focus light (of any or only desired frequencies) passing through the light pipe 204 on the sensing area 106 . In operation, light of only desired wavelength(s) and/or frequency(ies) can pass through the light pipe 204 /light focusing layer 402 and be detected by the sensing area 106 .
- the light focusing layer 402 can be within the light pipe 204 .
- the light focusing optical layer 402 can be located above a light transmissive material 110 and one or more additional layers or gaps can be positioned between the light transmissive material 110 and the light focusing layer 402 .
- the light focusing layer 402 can be continuous above the light transmissive material 110 and/or sensing area 106 .
- the light focusing layer 402 can be other than continuous and/or be periodically positioned above the light transmissive material 110 and/or sensing area 106 .
- FIG. 5 depicts an embodiment of a light emitter 500 with a light spreading optical layer 502 .
- the light emitter 500 can comprise a substrate layer 102 with a silicon chip 104 in contact with a top surface of the substrate layer 102 .
- a emitting area 504 can be coupled and/or integral with the silicon chip 104 and the silicon chip can be coupled with the substrate 102 via one or more electrical couplings 108 .
- the emitter 500 can comprise a light blocking layer 202 defining a light pipe 204 that extends from the top surface of the light blocking material 202 to the surface of the silicon chip 104 and/or substrate 102 .
- the light pipe 204 can be filled or partially filled with a light transmissive (optically inert or substantially optically inert) material 110 and/or a light scattering layer 502 .
- the light scattering layer 502 can comprise any known convenient and/or desired material that is adapted and/or configured to selectively scatter light (of any or only desired frequencies) passing through the light pipe 204 from the light emitting area 504 . In operation, light of only desired wavelength(s) and/or frequency(ies) can be scattered while passing through the light pipe 204 /light scattering layer 402 and be detected by the sensing area 106 .
- the light scattering layer 502 can be within the light pipe 204 . However, in alternate embodiments, the light scattering layer 502 can be located above a light transmissive material 110 and one or more additional layers or gaps can be positioned between the light transmissive material 110 and the light scattering layer 502 . Moreover, in some embodiments, the light scattering layer 502 can be continuous above the light transmissive material 110 and/or the light emitting area 504 . However, in alternate embodiments, the light scattering layer 502 can be other than continuous and/or be periodically positioned above the light transmissive material 110 and/or light emitting area 504 .
- FIG. 6 depicts an embodiment of a method of manufacture of the optical sensor or emitter of FIGS. 1-5 .
- the method of manufacture of the optical sensor 100 or emitter 500 can comprise the steps of providing a substrate in step 602 , providing a silicon layer 604 having a sensor or emitter area, electrically coupling the silicon layer with the substrate in step 606 then depositing a light blocking material over the substrate and silicon layer and/or substrate in step 608 such as to define an aperture above the light sensor or light emitter. In some embodiments, depositing an optical layer within the aperture.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Measuring Cells (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
- This application claims priority under 35 U.S.C. § 119(e) from earlier filed U.S. Provisional Application Ser. No. 63/176,271, filed Apr. 17, 2021. The entirety of the above-listed provisional application is incorporated herein by reference.
- The present device relates to the field of optical sensor and methods of manufacture therefor.
-
FIG. 1 depicts a conventionaloptical sensor 100. As depicted, theoptical sensor 100 consists of asubstrate layer 102 with asilicon chip 104 in contact with a top surface of thesubstrate layer 102. Asensing area 106 is coupled with thesilicon chip 104 and the silicon chip is coupled with thesubstrate 102 via one or moreelectrical couplings 108. Thesubstrate 102,silicon chip 104,sensing area 106 andelectrical couplings 108 are covered with a light transmissive (optically inert or substantially optically inert)material 110. Surrounding thesubstrate 102, thesilicon chip 104, the sensing area,electrical couplings 108 and lighttransmissive material 110, is ahousing 112 that is separated from the interior structure by agap 114. In the common embodiment, the housing has a relativelythin thickness 116 and is only as thick as required to block undesired light from reaching thesensing area 106. However, manufacture can be complex and such structure can allow inadvertent triggering of thesensing area 106. What is needed is a sensor with an alternate structure such as an optical sensor with light pipe and method of manufacture. - Further details of the present device are explained with the help of the attached drawings in which:
-
FIG. 1 depicts a prior art embodiment of an optical sensor. -
FIG. 2 depicts an embodiment of an optical sensor with a light pipe. -
FIG. 3 depicts an embodiment of an optical sensor with a light pipe and filtering component. -
FIG. 4 depicts an embodiment of an optical sensor with a light pipe and light focusing component. -
FIG. 5 depicts an embodiment of an optical sensor with a light pipe and a light spreading component. -
FIG. 6 depicts an embodiment of a method of manufacture of the optical sensor ofFIGS. 1-5 . - As used in the description herein and throughout the claims that follow, “a”, “an”, and “the” includes plural references unless the context clearly dictates otherwise. Also, as used in the description herein and throughout the claims that follow, the meaning of “in” includes “in” and “on” unless the context clearly dictates otherwise.
-
FIG. 2 depicts an embodiment of anoptical sensor 100 with a light blockingoptical layer 202. As depicted, theoptical sensor 100 can comprise asubstrate layer 102 with asilicon chip 104 in contact with a top surface of thesubstrate layer 102. Asensing area 106 can be coupled and/or integral with thesilicon chip 104 and the silicon chip can be coupled with thesubstrate 102 via one or moreelectrical couplings 108. - In the embodiment depicted in
FIG. 2 , thesensor 100 can comprise alight blocking layer 202 defining alight pipe 204 that extends from the top surface of thelight blocking material 202 to the surface of thesilicon chip 104 and/orsubstrate 102. In some embodiments, thelight pipe 204 can be filled or partially filled with a light transmissive (optically inert or substantially optically inert)material 110. -
FIG. 3 depicts an embodiment of anoptical sensor 100 with a light filteringoptical layer 302. As depicted, theoptical sensor 100 can comprise asubstrate layer 102 with asilicon chip 104 in contact with a top surface of thesubstrate layer 102. Asensing area 106 can be coupled and/or integral with thesilicon chip 104 and the silicon chip can be coupled with thesubstrate 102 via one or moreelectrical couplings 108. - In the embodiment depicted in
FIG. 3 , thesensor 100 can comprise alight blocking layer 202 defining alight pipe 204 that extends from the top surface of thelight blocking material 202 to the surface of thesilicon chip 104 and/orsubstrate 102. - In some embodiments, the
light pipe 204 can be filled or partially filled with a light transmissive (optically inert or substantially optically inert)material 110 and/or alight filtering material 302. In some embodiments the light filteringoptical layer 302 can comprise any known convenient and/or desired material that is adapted and/or configured to selectively reflect, absorb and/or prohibit passage through the light filteringoptical layer 302 of light having any desired wavelength and/or frequency and/or wavelength range and/or frequency range and/or wavelength ranges and/or frequency ranges. In operation, light of only desired wavelength(s) and/or frequency(ies) can pass through thelight pipe 204/light filteringoptical layer 302 and reach and/or be detected by thesensing area 106. - In some embodiments the light filtering
optical layer 302 can be within thelight pipe 204. However, in alternate embodiments, the light filteringoptical layer 402 can be located above a lighttransmissive material 110 and one or more additional layers or gaps can be positioned between the lighttransmissive material 110 and the light filteringoptical layer 302. Moreover, in some embodiments, the light filteringoptical layer 302 can be continuous above the lighttransmissive material 110 and/orsensing area 106. However, in alternate embodiments, the light filteringoptical layer 302 can be other than continuous and/or be periodically positioned above the lighttransmissive material 110 and/orsensing area 106. -
FIG. 4 depicts an embodiment of anoptical sensor 100 with a light focusingoptical layer 402. As depicted, theoptical sensor 100 can comprise asubstrate layer 102 with asilicon chip 104 in contact with a top surface of thesubstrate layer 102. Asensing area 106 can be coupled and/or integral with thesilicon chip 104 and the silicon chip can be coupled with thesubstrate 102 via one or moreelectrical couplings 108. - In the embodiment depicted in
FIG. 4 , thesensor 100 can comprise alight blocking layer 202 defining alight pipe 204 that extends from the top surface of thelight blocking material 202 to the surface of thesilicon chip 104 and/orsubstrate 102. - In some embodiments, the
light pipe 204 can be filled or partially filled with a light transmissive (optically inert or substantially optically inert)material 110 and/or alight focusing layer 402. In some embodiments thelight focusing layer 402 can comprise any known convenient and/or desired material that is adapted and/or configured to selectively focus light (of any or only desired frequencies) passing through thelight pipe 204 on thesensing area 106. In operation, light of only desired wavelength(s) and/or frequency(ies) can pass through thelight pipe 204/light focusing layer 402 and be detected by thesensing area 106. - In some embodiments the
light focusing layer 402 can be within thelight pipe 204. However, in alternate embodiments, the light focusingoptical layer 402 can be located above a lighttransmissive material 110 and one or more additional layers or gaps can be positioned between the lighttransmissive material 110 and thelight focusing layer 402. Moreover, in some embodiments, thelight focusing layer 402 can be continuous above the lighttransmissive material 110 and/orsensing area 106. However, in alternate embodiments, thelight focusing layer 402 can be other than continuous and/or be periodically positioned above the lighttransmissive material 110 and/orsensing area 106. -
FIG. 5 depicts an embodiment of a light emitter 500 with a light spreadingoptical layer 502. As depicted, the light emitter 500 can comprise asubstrate layer 102 with asilicon chip 104 in contact with a top surface of thesubstrate layer 102. Aemitting area 504 can be coupled and/or integral with thesilicon chip 104 and the silicon chip can be coupled with thesubstrate 102 via one or moreelectrical couplings 108. - In the embodiment depicted in
FIG. 5 , the emitter 500 can comprise alight blocking layer 202 defining alight pipe 204 that extends from the top surface of thelight blocking material 202 to the surface of thesilicon chip 104 and/orsubstrate 102. - In some embodiments, the
light pipe 204 can be filled or partially filled with a light transmissive (optically inert or substantially optically inert)material 110 and/or alight scattering layer 502. In some embodiments, thelight scattering layer 502 can comprise any known convenient and/or desired material that is adapted and/or configured to selectively scatter light (of any or only desired frequencies) passing through thelight pipe 204 from thelight emitting area 504. In operation, light of only desired wavelength(s) and/or frequency(ies) can be scattered while passing through thelight pipe 204/light scattering layer 402 and be detected by thesensing area 106. - In some embodiments the
light scattering layer 502 can be within thelight pipe 204. However, in alternate embodiments, thelight scattering layer 502 can be located above a lighttransmissive material 110 and one or more additional layers or gaps can be positioned between the lighttransmissive material 110 and thelight scattering layer 502. Moreover, in some embodiments, thelight scattering layer 502 can be continuous above the lighttransmissive material 110 and/or thelight emitting area 504. However, in alternate embodiments, thelight scattering layer 502 can be other than continuous and/or be periodically positioned above the lighttransmissive material 110 and/orlight emitting area 504. -
FIG. 6 depicts an embodiment of a method of manufacture of the optical sensor or emitter ofFIGS. 1-5 . In some embodiments, the method of manufacture of theoptical sensor 100 or emitter 500 can comprise the steps of providing a substrate instep 602, providing asilicon layer 604 having a sensor or emitter area, electrically coupling the silicon layer with the substrate instep 606 then depositing a light blocking material over the substrate and silicon layer and/or substrate instep 608 such as to define an aperture above the light sensor or light emitter. In some embodiments, depositing an optical layer within the aperture. - Although exemplary embodiments of the invention have been described in detail and in language specific to structural features and/or methodological acts above, it is to be understood that those skilled in the art will readily appreciate that many additional modifications are possible in the exemplary embodiments without materially departing from the novel teachings and advantages of the invention. Moreover, it is to be understood that the subject matter defined in the appended claims is not necessarily limited to the specific features or acts described above. Accordingly, these and all such modifications are intended to be included within the scope of this invention construed in breadth and scope in accordance with the appended claims.
Claims (24)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/721,274 US20220352395A1 (en) | 2021-04-17 | 2022-04-14 | Optical sensor with light pipe and method of manufacture |
| PCT/US2022/025124 WO2022221733A1 (en) | 2021-04-17 | 2022-04-15 | Optical sensor with light pipe and method of manufacture |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163176271P | 2021-04-17 | 2021-04-17 | |
| US17/721,274 US20220352395A1 (en) | 2021-04-17 | 2022-04-14 | Optical sensor with light pipe and method of manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20220352395A1 true US20220352395A1 (en) | 2022-11-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US17/721,274 Pending US20220352395A1 (en) | 2021-04-17 | 2022-04-14 | Optical sensor with light pipe and method of manufacture |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20220352395A1 (en) |
| WO (1) | WO2022221733A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10348990B2 (en) * | 2014-04-14 | 2019-07-09 | Sharp Kabushiki Kaisha | Light detecting device, solid-state image capturing apparatus, and method for manufacturing the same |
| US9735135B2 (en) * | 2014-12-04 | 2017-08-15 | Pixart Imaging (Penang) Sdn. Bhd. | Optical sensor package and optical sensor assembly |
| EP3104190B1 (en) * | 2015-06-08 | 2024-04-17 | ams AG | Optical sensor arrangement |
| WO2017175829A1 (en) * | 2016-04-08 | 2017-10-12 | 日本化薬株式会社 | Optical film for eyewear, and optical laminate and eyewear which use same |
| US10712197B2 (en) * | 2018-01-11 | 2020-07-14 | Analog Devices Global Unlimited Company | Optical sensor package |
-
2022
- 2022-04-14 US US17/721,274 patent/US20220352395A1/en active Pending
- 2022-04-15 WO PCT/US2022/025124 patent/WO2022221733A1/en not_active Ceased
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| Publication number | Publication date |
|---|---|
| WO2022221733A1 (en) | 2022-10-20 |
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