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US20190385867A1 - Semiconductor manufacturing apparatus and method of manufacturing semiconductor device - Google Patents

Semiconductor manufacturing apparatus and method of manufacturing semiconductor device Download PDF

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Publication number
US20190385867A1
US20190385867A1 US16/268,538 US201916268538A US2019385867A1 US 20190385867 A1 US20190385867 A1 US 20190385867A1 US 201916268538 A US201916268538 A US 201916268538A US 2019385867 A1 US2019385867 A1 US 2019385867A1
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Prior art keywords
fluid
flow passage
hole
pipe
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US16/268,538
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English (en)
Inventor
Tomohiko Sugita
Katsuhiro Sato
Hiroaki ASHIDATE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kioxia Corp
Original Assignee
Toshiba Memory Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Memory Corp filed Critical Toshiba Memory Corp
Assigned to TOSHIBA MEMORY CORPORATION reassignment TOSHIBA MEMORY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ASHIDATE, HIROAKI, SATO, KATSUHIRO, SUGITA, TOMOHIKO
Publication of US20190385867A1 publication Critical patent/US20190385867A1/en
Priority to US17/464,007 priority Critical patent/US12027380B2/en
Abandoned legal-status Critical Current

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    • H10P72/0414—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H10P72/0402—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H10P50/00—
    • H10P70/00—
    • H10P72/0416—
    • H10P72/0426—
    • H10P72/7621—
    • H10P72/0424—

Definitions

  • Embodiments described herein relate to a semiconductor manufacturing apparatus and a method of manufacturing a semiconductor device.
  • FIG. 1 is a schematic diagram illustrating a configuration of a semiconductor manufacturing apparatus of a first embodiment
  • FIG. 2 is a sectional view illustrating a configuration of a substrate treatment tank of the first embodiment
  • FIGS. 3A to 3C are perspective views and a sectional view illustrating a structure of a nozzle of the first embodiment
  • FIGS. 4A and 4B are sectional views for illustrating functions of nozzles of the first embodiment
  • FIGS. 5A and 5B are sectional views for illustrating functions of nozzles of a comparative example of the first embodiment
  • FIGS. 6A to 6C are perspective views and a sectional view illustrating a structure of a nozzle of a second embodiment
  • FIG. 7 is a perspective view for illustrating a function of the nozzle of the second embodiment
  • FIGS. 8A and 8B are perspective views illustrating structures of nozzles of modifications of the second embodiment
  • FIG. 9 is a perspective view illustrating a nozzle of a modification of the second embodiment.
  • FIGS. 10A to 10C are a sectional view and perspective views illustrating a structure of a nozzle of a third embodiment.
  • a semiconductor manufacturing apparatus includes a substrate holder configured to hold a plurality of substrates such that the substrates are arranged in parallel to each other.
  • the apparatus further includes a fluid injector including a plurality of openings that inject fluid to areas in which distances from surfaces of the substrates are within distances between centers of the substrates adjacent to each other, the fluid injector being configured to change injection directions of the fluid injected from the openings in planes that are parallel to the surfaces of the substrates by self-oscillation.
  • FIGS. 1 to 10C the same or similar components are denoted by the same reference numerals, and overlapped description will be omitted.
  • FIG. 1 is a schematic diagram illustrating a configuration of a semiconductor manufacturing apparatus of a first embodiment.
  • the semiconductor manufacturing apparatus of FIG. 1 is a batch substrate treatment apparatus that treats a plurality of substrates (wafers) 1 with substrate treatment solution 2 .
  • the semiconductor manufacturing apparatus of FIG. 1 includes a substrate treatment tank 11 , a substrate holder 12 , an overflow module 13 , a circulation flow passage 14 , a pump 15 , a heater 16 , a cleaner 17 , a plurality of nozzles 18 , a controller 19 and a water level sensor 20 .
  • the nozzles 18 are examples of a fluid injector.
  • FIG. 1 illustrates the X direction and the Y direction substantially parallel to an installation surface of the semiconductor manufacturing apparatus and perpendicular to each other, and the Z direction substantially perpendicular to the installation surface of the semiconductor manufacturing apparatus.
  • the +Z direction is treated as the upper direction
  • the ⁇ Z direction is treated as the lower direction.
  • the ⁇ Z direction may coincide with the gravity direction, or may not coincide with the gravity direction.
  • the substrate treatment tank 11 houses the plurality of substrates 1 and the substrate treatment solution 2 . These substrates 1 are soaked in the substrate treatment solution 2 inside the substrate treatment tank 11 to be treated by the substrate treatment solution 2 .
  • the substrate holder 12 holds these substrates 1 in the substrate treatment tank 11 . These substrates 1 are held such that respective surfaces of the substrates 1 (first and second principal planes) become perpendicular to the Y direction, and the substrates 1 are arranged in parallel to each other.
  • the substrate treatment solution 2 overflown from the substrate treatment tank 11 is stored in the overflow module 13 , and is discharged from the overflow module 13 to the circulation flow passage 14 .
  • the pump 15 , the heater 16 , and the cleaner 17 are provided in series with the circulation flow passage 14 .
  • the pump 15 carries the substrate treatment solution 2 through the circulation flow passage 14 .
  • the heater 16 heats the substrate treatment solution 2 that flows through the circulation flow passage 14 .
  • the cleaner 17 cleans the substrate treatment solution 2 that flows through the circulation flow passage 14 by a filter or the like.
  • the substrate treatment solution 2 that passes through the pump 15 , the heater 16 , and the cleaner 17 is supplied from the circulation flow passage 14 to the substrate treatment tank through the nozzles 18 again.
  • the substrate treatment solution 2 circulates between the substrate treatment tank 11 and the circulation flow passage 14 .
  • the nozzles 18 inject the substrate treatment solution 2 to gaps between the substrates 1 or to the vicinity of the surfaces of the substrates 1 .
  • the nozzles 18 are installed outside the substrate treatment tank 11 in FIG. 1 , but may be disposed inside the substrate treatment tank 11 as described below.
  • the controller 19 controls the operation of the semiconductor manufacturing apparatus.
  • Examples of the controller 19 include a processor, an electric circuit, a PC (Personal Computer).
  • the controller 19 causes the pump 15 to control circulation or a flow rate of the substrate treatment solution 2 .
  • the controller 19 controls the operation of the heater 16 to control the temperature of the substrate treatment solution 2 .
  • the controller 19 has a function of stopping the operation of the semiconductor manufacturing apparatus on the basis of a water level lowering signal from the water level sensor 20 that monitors the water level of the overflow module 13 .
  • the substrate treatment solution 2 is, for example, solution or liquid chemicals that treat(s) the substrates 1 , and is/are more specifically cleaning solution, rinse solution, etchant, or the like.
  • the substrate treatment solution 2 may be replaced with fluid other than the liquid (for example, gas, gas-liquid mixed fluid, supercritical fluid, or solid-liquid mixed fluid).
  • components for liquid such as the overflow module 13 ) composing the semiconductor manufacturing apparatus is replaced with components for gas, gas-liquid mixed fluid, supercritical fluid, solid-liquid mixed fluid, or the like.
  • FIG. 2 is a sectional view illustrating a configuration of a substrate treatment tank 11 of the first embodiment.
  • FIG. 2 illustrates eight substrates 1 housed in the substrate treatment tank 11 , and seven openings provided in the one nozzle 18 . These substrates 1 are held so as to be arranged in parallel to each other. Consequently, the seven gaps are provided between the eight substrates 1 .
  • the seven openings of the nozzle 18 inject the substrate treatment solution 2 to the seven gaps. More specifically, the openings and the gaps correspond on a one-to-one basis, and each opening injects the substrate treatment solution 2 to only a corresponding gap of these gaps.
  • an opening for a certain substrate injects the substrate treatment solution 2 to an area in which a distance from a surface of the substrate 1 is within a distance between the centers of the substrates 1 adjacent to each other. Consequently, the substrate treatment solution 2 is supplied to the respective surfaces of the substrates 1 .
  • the distance between the centers of the substrates 1 adjacent to each other means substantially a distance between the substrates 1 illustrated in FIG. 2 .
  • Each substrate 1 includes a first principal plane formed with a transistor and a memory cell, and a second principal plane on a side opposite to the first principal plane, as surfaces.
  • the first principal plane is an object to be treated by the substrate treatment solution 2
  • the second principal plane is not an object to be treated by the substrate treatment solution 2 . Therefore, the substrate treatment solution 2 of this embodiment needs to be injected to at least the respective first principal planes of the substrates 1 .
  • each opening injects the substrate treatment solution 2 to at least the first principal plane of the one corresponding substrate 1 .
  • another opening that allows the substrate treatment solution 2 to be injected to the first principal plane of the leftmost substrate 1 needs to be provided in the nozzle 18 . This opening allows the substrate treatment solution 2 to be injected to the area in which a distance from the surface of the substrate 1 is within a distance between the centers of the substrates 1 adjacent to each other.
  • each of the eight substrates 1 illustrated in FIG. 2 may be held such that the first principal plane faces the first principal plane, and the second principal plane may be held so as to face the second principal plane of the adjacent substrate 1 .
  • each opening allows the substrate treatment solution 2 to be injected to the first principal planes of the two corresponding substrates 1 . Therefore, the nozzle 18 in this case only need to include four openings for the eight substrates 1 .
  • the substrate treatment solution 2 is appropriately abbreviated to “liquid 2 ”.
  • FIGS. 3A to 3C are perspective views and a sectional view illustrating a structure of the nozzle 18 of the first embodiment.
  • the nozzle 18 of this embodiment includes a first pipe 21 having one row of first holes 21 a, a second pipe 22 having one row of second holes 22 a, and two rows of third holes 22 b, 22 c, and a third pipe 23 having one row of fourth holes 23 a.
  • the second pipe 22 surrounds the first pipe 21
  • the third pipe 23 surrounds the second pipe 22 .
  • the fourth holes 23 a correspond to the openings of the nozzles 18 illustrated in FIG. 2 .
  • FIG. 3B illustrates the one first hole 21 a, the one second hole 22 a, the two third holes 22 b, 22 c, and the one fourth hole 23 a as a single set of holes.
  • Arrows A 0 to A 6 denote the flow of the liquid 2 through these holes.
  • the nozzle 18 of this embodiment changes the injection direction of the liquid 2 injected from the fourth hole 23 a in a plane in parallel to the surface of each substrate 1 (in an XZ plane) by self-oscillation.
  • FIG. 3B illustrates a state in which the injection direction of the liquid 2 changes between the arrow A 1 and the arrow A 2 (oscillation of jet).
  • the nozzle 18 of this embodiment does not include any machine or oscillator for exciting this change.
  • the liquid 2 is supplied to the nozzle 18 having the first to fourth holes 21 a to 23 a, so that this change is self-oscillated.
  • a process of the self-oscillation of this change will be described.
  • a space in the nozzle 18 is classified into a first space in the first pipe 21 , a second space between the first pipe 21 and the second pipe 22 , and a third space between the second pipe 22 and the third pipe 23 .
  • the liquid 2 flows through the first space in the first pipe 21 , flows from the first pipe into the second space through the first hole 21 a, and flows from the second space into the third space through the second hole 22 a (arrow A 0 ).
  • the liquid 2 that flows in the third space is injected from the third space through the fourth hole 23 a.
  • the liquid 2 illustrated by the arrow A 1 flows to the vicinity of left ends of the second hole 22 a and the fourth hole 23 a, and therefore a part of the liquid 2 is not injected from the fourth hole 23 a, and returns from the third space to the second space through the third hole 22 b (arrow A 3 ).
  • This liquid 2 flows in the vicinity of right ends of the second hole 22 a and the fourth hole 23 a by action of flowing force (arrow A 5 ). As a result, this liquid 2 flows as illustrated in the arrow A 2 .
  • the liquid 2 that flows in the third space is injected from the third space through the fourth hole 23 a as illustrated by the arrow A 2 , for example.
  • the liquid 2 illustrated by the arrow A 2 flows into the vicinity of the right ends of the second hole 22 a and the fourth hole 23 a, and therefore a part of the liquid 2 is not injected from the fourth hole 23 a, and returns from the third space to the second space through the third hole 22 c (arrow A 4 ).
  • This liquid 2 flows into the vicinity of the left ends of the second hole 22 a and the fourth hole 23 a by action of flowing force (arrow A 6 ). As a result, this liquid 2 flows as illustrated by the arrow A 1 .
  • the flow illustrated by the arrow A 1 gradually changes to the flow illustrated by the arrow A 2 .
  • the flow illustrated by the arrow A 2 gradually changes to the flow illustrated by the arrow A 1 .
  • the injection direction of the liquid 2 injected from the fourth hole 23 a changes between the arrow A 1 and the arrow A 2 .
  • the liquid 2 in the third space is fed back to the second space through the third holes 22 b, 22 c, so that this change is self-oscillated.
  • the nozzle 18 of this embodiment changes the injection direction of the liquid 2 by self-oscillation. Therefore, according to this embodiment, the liquid 2 can be supplied to various areas on the substrate 1 , and it is possible to reduce the unevenness of the supply amounts of the liquid 2 between the areas on the substrate 1 . This is similar to a case where fluid other than the liquid 2 is injected.
  • the nozzle 18 of this embodiment periodically changes the injection direction of the liquid 2 in the plane parallel to the surface of the substrate (in the XZ plane). More specifically, the injection direction of the liquid 2 repeatedly changes between the arrow A 1 and the arrow A 2 .
  • the cycle of this periodical change is, for example, 10 seconds or less.
  • the injection direction of the liquid 2 of this embodiment changes in the plane parallel to the plane parallel to the surface of the substrate (in the XZ plane), but hardly changes in plane perpendicular to the surface of the substrate 1 (in a YZ plane or the like).
  • This state is illustrated in FIG. 3C .
  • all the injection directions of the liquid 2 injected from the three fourth holes 23 a change in the XZ planes.
  • an X component and a Z component of the flow velocity of the liquid 2 in each fourth hole 23 a change, but a Y component of the flow velocity of the liquid 2 in each fourth hole 23 a does not change.
  • the liquid 2 from the one fourth hole 23 a is injected to only the single gap between the substrates 1 , and therefore is not injected to other gaps between the substrates 1 (refer to FIG. 2 ).
  • the plane parallel to the surface of the substrate is referred to as a “parallel plane”, and the plane perpendicular to the surface of the substrate 1 is referred to as a “perpendicular plane”.
  • the injection direction of the liquid 2 of this embodiment changes in the parallel plane, but does not change in the perpendicular plane. Therefore, an angle at which the injection direction changes in the parallel plane is larger than an angle at which the injection direction changes in the perpendicular plane.
  • the former angle is roughly an angle between the arrow A 1 and the arrow A 2 illustrated in FIG. 3B , and, for example, about 10 degrees to about 80 degrees.
  • the latter angle is, for example, a value of 0 degrees or near 0 degrees.
  • FIGS. 4A and 4B are sectional views for illustrating functions of the nozzles 18 of the first embodiment.
  • FIG. 4A illustrates the two nozzles 18 that inject the liquid 2 .
  • FIG. 4B illustrates the four nozzles 18 that inject the liquid 2 containing bubbles 3 .
  • the injection directions of the liquid 2 change, so that the liquid 2 is supplied to various areas on the substrate 1 .
  • the injection directions of the liquid 2 change, so that the bubbles 3 are supplied to various areas on the substrate 1 .
  • FIGS. 5A and 5B are sectional views for illustrating functions of nozzles of a comparative example of the first embodiment.
  • FIG. 5A illustrates two nozzles 18 that inject liquid 2 .
  • FIG. 5B illustrates the four nozzles 18 that inject the liquid 2 containing bubbles 3 .
  • the injection directions of the liquid 2 do not change, and therefore areas exposed to the flow of the liquid 2 , and areas unlikely to be exposed to the flow of the liquid 2 are generated in the substrate 1 .
  • the injection directions of the liquid 2 do not change, and therefore areas exposed to the flow of the bubbles 3 , and areas unlikely to be exposed to the bubbles 3 are generated in the substrate 1 .
  • each nozzle 18 of this embodiment changes the injection direction of the liquid 2 injected from each opening (fourth hole 23 a ) in the plane parallel to the surface of the substrate by self-oscillation. Therefore, according to this embodiment, it is possible to reduce the unevenness of the supply amounts of the liquid 2 between the areas on the substrate 1 .
  • Treatment of this embodiment is desirably applied to, for example, the substrate 1 for manufacturing a three-dimensional semiconductor memory.
  • the reason is because when the three-dimensional memory is manufactured, a request for in-plane uniformity of a characteristic of the substrate 1 is often strict. This is similar to a second and third embodiments described below.
  • FIGS. 6A to 6C are perspective views and a sectional view illustrating a structure of a nozzle 18 of the second embodiment.
  • the nozzle 18 of this embodiment includes an injecting member 24 illustrated in FIG. 6A to FIG. 6C , and a pipe 25 illustrated in FIG. 6C . As illustrated in FIG. 6C , the injecting member 24 is mounted on a side surface of the pipe 25 . Liquid 2 of this embodiment flows in the pipe 25 , flows into the injecting member 24 from the pipe 25 , and is injected from the injecting member 24 to respective surfaces of substrates 1 .
  • the injecting member 24 includes one row of inlets 24 a, one row of outlets 24 b, a first injecting flow passage 24 c, a second injecting flow passage 24 d, a first circulation flow passage 24 e, and a second circulation flow passage 24 f.
  • the first and second injecting flow passages 24 c, 24 d each are an example of a first flow passage
  • the first and second circulation flow passages 24 e, 24 f each are an example of a second flow passage.
  • the outlets 24 b correspond to the openings of each nozzle 18 illustrated in FIG. 2 .
  • FIG. 6B illustrates an XZ cross-section of the injecting member 24 , and illustrates the one inlet 24 a and the one outlet 24 b located in this XZ cross-section.
  • the first and second injecting flow passages 24 c, 24 d allows the liquid 2 to transfer from the inlet 24 a to the outlet 24 b.
  • the width in the X direction of the first injecting flow passage 24 c is constant, and the width in the X direction of the second injecting flow passage 24 d gradually increases from an upstream side to a downstream side of the liquid 2 .
  • the first and second circulation flow passages 24 e, 24 f allow the liquid 2 in the first and second injecting flow passages 24 c, 24 d to return from a point on the outlet 24 b side to a point on the inlet 24 a side.
  • the point on the outlet 24 b side is located near the outlet 24 b, and the point on the inlet 24 a side is located between the first injecting flow passage 24 c and the second injecting flow passage 24 d.
  • Other XZ cross-sections of the injecting member 24 have structures similar to the XZ cross-section illustrated in FIG. 6B .
  • the liquid 2 of this embodiment is fed back from the point on the outlet 24 b side to the point on the inlet 24 a side, similarly to the first embodiment. Therefore, the injection direction of the liquid 2 injected from each outlet 24 b changes in a plane parallel to the surface of the substrate (in the XZ plane) by self-oscillation.
  • FIG. 7 is a perspective view for illustrating a function of the nozzle 18 of the second embodiment.
  • Arrows B 1 denote the inflow directions of the liquid 2 that flows in the inlets 24 a from the pipe 25 .
  • Arrows B 2 denote the injection directions of the liquid 2 injected from the outlets 24 b.
  • the injection directions of the liquid 2 of this embodiment change in the plane parallel to the surface of the substrate (in the XZ plane) as illustrated by the arrows B 2 , but hardly change in a plane perpendicular to the surface of the substrate 1 (in a YZ plane or the like).
  • the cycle of the change is similar to the case of the first embodiment.
  • FIGS. 8A and 8B are perspective views illustrating structures of nozzles 18 of modifications of the second embodiment.
  • FIG. 8A and FIG. 8B each omit illustration of a whole of the injecting member 24 for the purpose of illustrative clarity, and illustrate only the inlets 24 a and the outlets 24 b of the injecting member 24 .
  • the injecting member 24 are disposed inside the pipe 25 , and the outlets 24 b are located in the side surface of the pipe 25 .
  • the injecting member 24 is disposed outside the pipe 25 , and the inlets 24 a are located in the side surface of the pipe 25 .
  • the nozzle 18 of this embodiment may employ either configuration of FIG. 8A and FIG. 8B .
  • the configuration of FIG. 8A has an advantage capable of downsizing the nozzle 18 , for example.
  • the configuration of FIG. 8B has an advantage that detachable attachment of the injecting member 24 to the pipe 25 is easy, for example.
  • the only one injecting member 24 may be mounted on the one pipe 25 , or a plurality of the injecting members 24 may be mounted on the one pipe 25 .
  • FIG. 9 is a perspective view illustrating a structure of a nozzle 18 of a modification of the second embodiment.
  • a semiconductor manufacturing apparatus of FIG. 1 is a single wafer processing (single substrate processing) substrate treatment apparatus that treats a single substrate 1 by substrate treatment solution 2 .
  • the above substrate holder 12 is replaced with a substrate holder 12 ′ that horizontally holds the single substrate 1 .
  • An example of the substrate holder 12 ′ is a stage on which the substrates 1 is placed.
  • the nozzle 18 of this modification includes a pipe 25 , and an injecting member 24 mounted on a tip of the pipe 25 .
  • the injecting member 24 has the structure illustrated in FIG. 6A .
  • the number of inlets 24 a of the injecting member 24 may be one or the plural number.
  • the number of outlets 24 b of the injecting member 24 may be one or the plural number.
  • the nozzle 18 of this modification injects liquid 2 to a substrates 1 .
  • the injection directions of the liquid 2 injected from the outlets 24 b changes in a plane parallel to a surface of substrate 1 (in an XY plane) by self-oscillation.
  • the nozzle 18 of this embodiment changes the injection direction of the liquid 2 injected from each opening (outlet 24 b ) in the plane parallel to the surface of the substrate 1 by self-oscillation. Therefore, according to this embodiment, unevenness of supply amounts of the liquid 2 between areas on the substrates 1 can be reduced similarly to the first embodiment.
  • FIGS. 10A to 10C are perspective views and a sectional view illustrating a structure of a nozzle 18 of a third embodiment.
  • the nozzle 18 of this embodiment includes one pipe 26 having a tubular shape, one first member 27 having a plate shape, and two second members 28 having a rod shape, as illustrated in FIG. 10A to FIG. 10C .
  • a space in the pipe 26 is partitioned into a lower space that functions as a first flow passage which allows liquid 2 to be transferred, and an upper space that functions as a second flow passage into which the liquid 2 flows from the first flow passage.
  • the first flow passage and the second flow passage are partitioned by the first member 27 provided in the pipe 26 .
  • the two second members 28 are provided in parallel to each other in the second flow passage.
  • the pipe 26 includes one row of first holes 26 a, and the first member 27 includes one row of second holes 27 a.
  • the first holes 26 a are provided on the second flow passage side of the pipe 26 , and correspond to the openings of the nozzle 18 illustrated in FIG. 2 .
  • FIG. 10B illustrates an XZ cross-section of the nozzle 18 , and illustrates the one first hole 26 a and the one second hole 27 a located in this XZ cross-section.
  • the liquid 2 in the first flow passage flows into the second flow passage through the second hole 27 a.
  • the two second members 28 form a flow passage that allows this liquid 2 to return from a point on the first hole 26 a side to a point on the second hole 27 a side.
  • the point on the first hole 26 a side is located near the first hole 26 a, and the point on the second hole 27 a side is located near the second hole 27 a.
  • Other XZ cross-sections of the nozzle 18 of this embodiment have structures similar to the XZ cross-section illustrated in FIG. 10B .
  • the liquid 2 of this embodiment is fed back from the point on the first hole 26 a side to the point on the second hole 27 a side, similarly to the first and second embodiments. Therefore, the injection direction of the liquid 2 injected from each first hole 26 a changes in a plane parallel to the surface of the substrate 1 (in the XZ plane) by self-oscillation.
  • the function of the nozzle 18 of this embodiment is similar to the function of the nozzle 18 of the second embodiment described with reference to FIG. 7 .
  • the nozzle 18 of this embodiment changes the injection direction of the liquid 2 injected from each opening (first hole 26 a ) in the plane parallel to the surface of the substrate 1 by self-oscillation. Therefore, according to this embodiment, unevenness of supply amounts of the liquid 2 between areas on the substrates 1 can be reduced similarly to the first and second embodiments.

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  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Nozzles (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
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US12027380B2 (en) 2024-07-02
US20210398825A1 (en) 2021-12-23

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