US20190252347A1 - Trace Design for Bump-on-Trace (BOT) Assembly - Google Patents
Trace Design for Bump-on-Trace (BOT) Assembly Download PDFInfo
- Publication number
- US20190252347A1 US20190252347A1 US16/390,953 US201916390953A US2019252347A1 US 20190252347 A1 US20190252347 A1 US 20190252347A1 US 201916390953 A US201916390953 A US 201916390953A US 2019252347 A1 US2019252347 A1 US 2019252347A1
- Authority
- US
- United States
- Prior art keywords
- trace
- landing
- landing trace
- conductive pillar
- sidewall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H10W90/701—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H10W72/012—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/1012—Auxiliary members for bump connectors, e.g. spacers
- H01L2224/10152—Auxiliary members for bump connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
- H01L2224/10175—Flow barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13012—Shape in top view
- H01L2224/13013—Shape in top view being rectangular or square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13012—Shape in top view
- H01L2224/13014—Shape in top view being circular or elliptic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13023—Disposition the whole bump connector protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13199—Material of the matrix
- H01L2224/13294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/132 - H01L2224/13291
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13299—Base material
- H01L2224/133—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/1601—Structure
- H01L2224/16012—Structure relative to the bonding area, e.g. bond pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/1601—Structure
- H01L2224/16012—Structure relative to the bonding area, e.g. bond pad
- H01L2224/16013—Structure relative to the bonding area, e.g. bond pad the bump connector being larger than the bonding area, e.g. bond pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16113—Disposition the whole bump connector protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8112—Aligning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8138—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/81399—Material
- H01L2224/814—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/81438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/81447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/38—Effects and problems related to the device integration
- H01L2924/381—Pitch distance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/38—Effects and problems related to the device integration
- H01L2924/384—Bump effects
- H01L2924/3841—Solder bridging
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1173—Differences in wettability, e.g. hydrophilic or hydrophobic areas
-
- H10W72/072—
-
- H10W72/07221—
-
- H10W72/07236—
-
- H10W72/07252—
-
- H10W72/07254—
-
- H10W72/221—
-
- H10W72/225—
-
- H10W72/232—
-
- H10W72/242—
-
- H10W72/244—
-
- H10W72/252—
-
- H10W72/253—
-
- H10W72/287—
-
- H10W72/29—
-
- H10W72/923—
-
- H10W72/931—
-
- H10W72/932—
-
- H10W80/732—
-
- H10W90/724—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y02P70/613—
Definitions
- an integrated circuit (IC) or die is mounted to a substrate (e.g., a printed circuit board (PCB) or other integrated circuit carrier) through a bump on trace (BOT) interconnection.
- a substrate e.g., a printed circuit board (PCB) or other integrated circuit carrier
- BOT interconnection employs solder to electrically couple the bump of the IC to the trace of the substrate.
- bump pitch In light of the demand for ever smaller packages, attempts are often made to reduce the distance between adjacent bumps, which is known as the bump pitch.
- One way to reduce the bump pitch is by reducing the distance between neighboring metal traces.
- FIG. 1 illustrates a top view of an embodiment bump-on-trace (BOT) assembly in a package (with the die removed) for ease of illustration;
- BOT bump-on-trace
- FIG. 2 illustrates a cross section of the embodiment BOT assembly of FIG. 1 taken generally along line 2 - 2 ;
- FIG. 3 illustrates a cross section of the embodiment BOT assembly of FIG. 1 taken generally along line 3 - 3 ;
- FIGS. 4-6 collectively illustrate an embodiment process flow used to fabricate the embodiment BOT assembly of FIGS. 1-3 ;
- FIGS. 7-8 illustrate recesses that may be formed in the landing trace of the embodiment BOT assembly of FIG. 1 ;
- FIG. 9 illustrates dimensions of the conductive pillar relative to the portion of the landing trace beneath the conductive pillar
- FIGS. 10-11 provide a set of images depicting the increased distance between the solder feature and the neighboring trace in a BOT interconnection and the embodiment BOT assembly of FIG. 1 ;
- FIGS. 12-13 illustrate embodiment methods of forming the BOT assembly of FIG. 1 .
- BOT bump-on-trace
- a bump-on-trace (BOT) assembly 10 for a package 12 is illustrated.
- the BOT assembly 10 offers numerous benefits and advantages over BOT assemblies formed using other approaches.
- the BOT assembly 10 allows solder to more uniformly disperse over the landing trace. By doing so, undesirable solder bridging between adjacent traces in a fine pitch bump design is inhibited or prevented.
- the BOT assembly 10 provides a more robust and reliable electrical interconnection for the package 12 .
- the BOT assembly 10 is employed to electrically (and, in some embodiments, structurally) couple a die 14 (in FIGS. 2 and 3 ) to a substrate 16 .
- the die 14 includes one or more of a variety of different integrated circuits singulated from a wafer.
- the substrate 16 may be, for example, a printed circuit board.
- the die 14 and the substrate 16 may each include additional components, layers, structures, or features that have been omitted for ease of illustration.
- the BOT assembly 10 includes a landing trace 18 , a conductive pillar 20 , and a solder feature 22 .
- the landing trace 18 is adjacent to at least one neighboring trace 30 on the substrate 16 .
- the landing trace 18 has a reduced length or may be truncated relative to the adjacent neighboring trace 30 . In other words, the landing trace 18 may be shorter than the neighboring trace 30 .
- the landing trace 18 is supported by the substrate 16 .
- the landing trace 18 is entirely disposed above a top surface of the substrate 16 .
- the landing trace 18 is at least partially embedded into the substrate 16 .
- the landing trace 18 is formed from a conductive metal such as, for example, copper (Cu), but may be suitably formed from other conductive metals.
- the landing trace 18 of the BOT assembly 10 includes an end 24 of the landing trace 18 .
- the end 24 may also be referred to a distal end.
- the end 24 provides an end surface 26 situated between opposing sidewalls 28 .
- the distal end 24 of the landing trace 18 is offset from a distal end 24 of the neighboring trace 30 .
- the landing trace 18 and the neighboring trace 30 are misaligned relative to one another as positioned on the substrate 16 .
- the conductive pillar 20 is coupled to the die 14 .
- the conductive pillar 20 is formed from a conductive metal such as, for example, copper (Cu), but may be suitably formed from other conductive metals.
- the conductive pillar 20 may be referred to as a bump or an under bump metallization (UBM).
- the conductive pillar 20 extends to at least the distal end 24 of the landing trace 18 and may extend beyond the distal end 24 in some embodiments.
- a periphery 32 of the conductive pillar 20 at least reaches to the end surface 26 of the underlying landing trace 18 as shown in FIG. 1 .
- the conductive pillar 20 overhangs the underlying landing trace 18 such that the periphery 32 of the conductive pillar 20 projects beyond the end surface 26 of the underlying landing trace 18 .
- the conductive pillar 20 has a width 34 that is greater than a width 36 of the underlying landing trace 18 .
- the landing trace 18 and the conductive pillar 20 may take a variety of suitable shapes.
- the landing trace 18 and the conductive pillar 20 are not limited to the shape illustrated in FIGS. 1-3 .
- the landing trace 18 may be square, round, oval, and so on.
- the conductive pillar 20 may be may be rectangular, square, round, and so on.
- the solder feature 22 (e.g., solder joint) is disposed between and around the conductive pillar 20 and the landing trace 18 . As such, the solder feature 22 is able to electrically couple the conductive pillar 20 extending from the die 14 with the landing trace 18 disposed on the substrate 16 .
- the solder feature 22 engages and abuts both of the sidewalls 28 of the landing trace 18 . In an embodiment, the solder feature 22 also engages and abuts the end surface 26 of the landing trace 18 .
- the solder feature 22 may be a solder paste, a solder ball, or another suitable fusible metal alloy used to join components and having a melting point below that of the components.
- the solder feature 22 is allowed to uniformly disperse on both sidewalls 28 of the landing trace 18 .
- the volume of solder on either side of the landing trace 18 is reduced compared to when the solder only wets on one of the two sidewalls 28 .
- the volume of solder is divided between the two sidewalls 28 instead of accumulating along just one of the sidewalls 28 .
- the distance between the solder feature 22 and the neighboring trace 30 is decreased relative to when most or all of the solder feature 22 collects along only the sidewall 28 of the landing trace 18 facing the neighboring trace 30 . Therefore, the pitch between the landing trace 18 and the neighboring trace 30 can be reduced to, for example, provide for a smaller overall package 10 .
- the volume of solder is shared between the two sidewalls 28 and the end surface 26 of the landing trace 18 .
- the distance between the solder feature 22 and the neighboring trace 30 may be even further decreased relative to when the solder feature 22 collects along only the sidewall 28 of the landing trace 18 facing the neighboring trace 30 .
- the landing trace 18 may be made smaller than the neighboring trace 30 from the outset. In such circumstances, the portion 38 of the landing trace 18 depicted by dashed lines in FIG. 4 will not have been created.
- the landing trace 18 and the neighboring landing trace 18 may have about the same length if there is sufficient room at the distal end 24 of the landing trace 18 to permit the conductive pillar to extend to, or overhang, the distal end 24 . In other words, if the distal end 24 of the landing trace 18 is spaced apart from a periphery of the substrate 16 to allow for a solder connection then the landing trace 18 and the neighboring landing trace 18 may have about the same length.
- FIGS. 4-6 an embodiment process flow used to fabricate the BOT assembly 10 of FIGS. 1-3 is schematically illustrated.
- the landing trace 18 and the neighboring trace 30 are formed on the substrate 16 .
- a portion 38 (represented by dashed lines) of the landing trace 18 is omitted during the formation process such that the landing trace 18 is shorter in length than the neighboring trace 30 .
- the landing trace 18 and the neighboring trace 30 may be initially formed with the same length and, thereafter, the portion 38 may be removed to provide the landing trace 18 with a shorter length.
- the portion 38 of the landing trace 18 may be removed by, for example, etching.
- the portion 38 of the landing trace may also be suitably removed by a laser cut, laser burn, selective etching process, a mechanical cut, etc.
- an augmented wetting area 40 (shown in dashed lines in FIG. 5 ) is generated or produced.
- the augmented wetting area 40 includes the end surface 26 of the landing trace 18 .
- the augmented wetting area 40 includes the end surface 26 and at least a portion of both of the sidewalls 28 of the landing trace 18 .
- the augmented wetting area 40 provides more area or additional surfaces for the solder feature 22 to disperse over and around.
- the conductive pillar 20 is positioned over the landing trace 18 .
- the conductive pillar 20 extends at least to the distal end 24 of the landing trace 18 .
- the conductive pillar 20 overhangs the distal end 24 of the landing trace 18 .
- the periphery 32 of the conductive pillar 20 projects beyond the end surface 26 of the underlying landing trace 18 as shown in FIG. 5 .
- the solder feature 22 initially disposed between the landing trace 18 and the conductive pillar 20 is reflowed.
- the landing trace 18 is electrically coupled to the conductive pillar 20 .
- the solder feature 22 extends along both sidewalls 28 and the end surface 26 of the landing trace 18 . Therefore, the extrusion of the solder feature 22 in the direction of the adjacent neighboring trace 30 is reduced relative to the other BOT interconnections.
- one or more recesses 42 may be formed in the landing trace 18 to generate or contribute to the augmented wetting area 40 (shown in dashed lines) of the landing trace 18 .
- the recesses 42 may be formed in the landing trace 18 instead of, or in addition to, removal of the portion 38 of the landing trace 18 shown in FIG. 4 .
- the recesses 42 in the landing trace 18 provide an area for the solder feature 22 to occupy upon reflow. As such, the extrusion of the solder feature 22 in the direction of the adjacent neighboring trace 30 is reduced relative to the other BOT interconnections.
- the recesses 42 may be formed in a “fish bone” pattern. As shown in FIG. 8 , the recesses 42 may be formed in a “comb” pattern. The recesses 42 may also be formed in a variety of other suitable patterns. For example, the recesses 42 may be formed in symmetrical or asymmetrical patterns, patterns that have even or uneven spacing between recesses 42 , and so on. In addition, the recesses 42 may have a variety of suitable shapes. For example, the recesses 42 may be square, rectangular, semi-circular, oval, and so on.
- the neighboring trace 30 is depicted laterally adjacent to the landing trace 18 .
- the solder feature 22 and the conductive pillar 20 are illustrated over the landing trace 18 .
- the conductive pillar 20 has a diameter, R.
- the landing trace 18 has a length, L, which represents the portion of the landing trace 18 within the periphery 32 of the conductive pillar 20 .
- the length, L, of the landing trace 18 within the periphery 32 of the conductive pillar 20 is about 20% to about 100% of the diameter, R, of the conductive pillar 20 .
- the 20% lower limit was selected because the total assembly process variation is around 20% of the diameter, R, of the conductive pillar 20 . Therefore, in order to ensure that the conductive pillar 20 has a suitable joint on the landing trace 18 , the length, L, of the landing trace 18 is suggested to be 20% or more of the diameter, R, of the conductive pillar 20 . If not, an electric open may be encountered after the assembly process because the conductive pillar 20 does not contact on landing trace 18 .
- the conductive pillar 20 is positioned such that the length, L, of the landing trace 18 within the periphery 32 of the conductive pillar 20 is less than 100% of the diameter, R, of the conductive pillar 20 . In other words, the equation 1 ⁇ 5 R ⁇ L ⁇ R is satisfied.
- a first image 44 and a second image 46 illustrate the increased distance between the solder feature and the neighboring trace when the process described herein is utilized.
- a distance, D 1 between the solder feature and the neighboring trace in the BOT interconnection 52 is less than a distance, D 2 , between the solder feature and the neighboring trace using the embodiment BOT assembly 10 .
- the distance, D 2 in FIG. 11 far exceeds the distance, D 1 , in FIG. 10 because the solder feature 22 is encouraged to wet along both sidewalls in the BOT assembly 10 of FIG. 11 .
- a method 60 of forming the BOT assembly 10 is illustrated.
- the landing trace 18 is formed on the substrate 16 .
- the conductive pillar 20 is positioned over the landing trace 18 such that the conductive pillar 20 extends at least to the end 24 of the landing trace 18 .
- the solder feature 22 between the landing trace 18 and the conductive pillar 20 is reflowed to electrically couple the landing trace 18 to the conductive pillar 20 .
- a method 70 of forming the BOT assembly 10 is illustrated.
- the landing trace 18 is formed on the substrate 16 .
- a portion of the landing trace 18 is removed to generate an augmented wetting area 40 .
- solder is applied over the augmented wetting area 40 of the landing trace 18 to electrically couple the landing trace to the conductive pillar 20 .
- the BOT assembly 10 controls or minimizes solder extrusion. Moreover, the BOT assembly 10 enables solder to more uniformly disperse over the landing trace. Therefore, the potential for the formation of a solder bridge is reduced in fine bump pitch packages. In other words, undesirable solder bridging between adjacent traces in a fine pitch bump (I/O) design is inhibited or prevented. In addition, BOT assembly 10 provides a more robust and reliable electrical interconnection for the package 12 by changing existing trace pattern design without substantial additional process cost.
- An embodiment method of forming a bump-on-trace (BOT) assembly includes forming a landing trace on a substrate, positioning a conductive pillar over the landing trace such that the conductive pillar extends at least to an end of the landing trace, and reflowing a solder feature between the landing trace and the conductive pillar to electrically couple the landing trace to the conductive pillar.
- An embodiment method of forming a bump-on-trace (BOT) assembly includes forming a landing trace on a substrate, removing a portion of the landing trace to generate an augmented wetting area, and applying solder over the augmented wetting area of the landing trace to electrically couple the landing trace to a conductive pillar.
- An embodiment bump-on-trace (BOT) interconnection for a package includes a landing trace including a distal end, a conductive pillar extending at least to the distal end of the landing trace, and a solder feature electrically coupling the landing trace and the conductive pillar.
- An embodiment structure includes a substrate and a landing trace on the substrate.
- the landing trace has a first side and a second side opposite to the first side.
- the landing trace has a plurality of indents extending into the first side in a plan view.
- the second side is free of indents in the plan view.
- An embodiment structure includes a substrate and a landing trace on the substrate.
- the landing trace has a first sidewall and a second sidewall opposite to the first sidewall.
- the first sidewall has a plurality of indents in a plan view.
- An entirety of the second sidewall is a planar sidewall.
- An embodiment structure includes a substrate and a landing trace on the substrate.
- the landing trace includes a first portion, a second portion, and a third portion connecting the first portion to the second portion in a plan view.
- a first sidewall of the first portion is collinear with a first sidewall of the second portion in the plan view.
- a second sidewall of the first portion is collinear with a second sidewall of the second portion and a second sidewall of the third portion in the plan view.
- the first sidewall of the third portion has a plurality of indents in the plan view.
- An entirety of the second sidewall of the third portion is a planar sidewall.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
Description
- This application is a continuation U.S. patent application Ser. No. 15/456,134, filed on Mar. 10, 2017, entitled “Trace Design for Bump-on-Trace (BOT) Assembly,” which is a continuation of U.S. patent application Ser. No. 14/143,648, filed Dec. 30, 2013, entitled “Trace Design for Bump-on-Trace (BOT) Assembly,” which application is incorporated herein by reference in its entirety.
- In a package such as a flip chip Chip Scale Package (fcCSP), an integrated circuit (IC) or die is mounted to a substrate (e.g., a printed circuit board (PCB) or other integrated circuit carrier) through a bump on trace (BOT) interconnection. The BOT interconnection employs solder to electrically couple the bump of the IC to the trace of the substrate.
- In light of the demand for ever smaller packages, attempts are often made to reduce the distance between adjacent bumps, which is known as the bump pitch. One way to reduce the bump pitch is by reducing the distance between neighboring metal traces.
- Unfortunately, reducing the distance between neighboring metal traces may lead to undesirable or detrimental consequences. For example, if the neighboring metal traces are too close to each other, a solder bridge may form during reflow when the BOT interconnection is established.
- For a more complete understanding of the present disclosure, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
-
FIG. 1 illustrates a top view of an embodiment bump-on-trace (BOT) assembly in a package (with the die removed) for ease of illustration; -
FIG. 2 illustrates a cross section of the embodiment BOT assembly ofFIG. 1 taken generally along line 2-2; -
FIG. 3 illustrates a cross section of the embodiment BOT assembly ofFIG. 1 taken generally along line 3-3; -
FIGS. 4-6 collectively illustrate an embodiment process flow used to fabricate the embodiment BOT assembly ofFIGS. 1-3 ; -
FIGS. 7-8 illustrate recesses that may be formed in the landing trace of the embodiment BOT assembly ofFIG. 1 ; -
FIG. 9 illustrates dimensions of the conductive pillar relative to the portion of the landing trace beneath the conductive pillar; -
FIGS. 10-11 provide a set of images depicting the increased distance between the solder feature and the neighboring trace in a BOT interconnection and the embodiment BOT assembly ofFIG. 1 ; and -
FIGS. 12-13 illustrate embodiment methods of forming the BOT assembly ofFIG. 1 . - Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated. The figures are drawn to clearly illustrate the relevant aspects of the embodiments and are not necessarily drawn to scale.
- The making and using of the present embodiments are discussed in detail below. It should be appreciated, however, that the disclosure provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative and do not limit the scope of the disclosure.
- The present disclosure will be described with respect to embodiments in a specific context, namely a package incorporating a bump-on-trace (BOT) interconnection. The concepts in the disclosure may also apply, however, to other packages, interconnection assemblies, or semiconductor structures.
- Referring collectively to
FIGS. 1-3 , a bump-on-trace (BOT)assembly 10 for apackage 12 is illustrated. As will be more fully explained below, theBOT assembly 10 offers numerous benefits and advantages over BOT assemblies formed using other approaches. For example, theBOT assembly 10 allows solder to more uniformly disperse over the landing trace. By doing so, undesirable solder bridging between adjacent traces in a fine pitch bump design is inhibited or prevented. In addition, theBOT assembly 10 provides a more robust and reliable electrical interconnection for thepackage 12. - As shown, the
BOT assembly 10 is employed to electrically (and, in some embodiments, structurally) couple a die 14 (inFIGS. 2 and 3 ) to asubstrate 16. In an embodiment, the die 14 includes one or more of a variety of different integrated circuits singulated from a wafer. In an embodiment, thesubstrate 16 may be, for example, a printed circuit board. In some embodiments, the die 14 and thesubstrate 16 may each include additional components, layers, structures, or features that have been omitted for ease of illustration. - As shown in
FIG. 1 , theBOT assembly 10 includes alanding trace 18, aconductive pillar 20, and asolder feature 22. Thelanding trace 18 is adjacent to at least one neighboringtrace 30 on thesubstrate 16. As will be explained below, thelanding trace 18 has a reduced length or may be truncated relative to the adjacent neighboringtrace 30. In other words, thelanding trace 18 may be shorter than the neighboringtrace 30. - As shown in
FIGS. 2-3 , thelanding trace 18 is supported by thesubstrate 16. In an embodiment, thelanding trace 18 is entirely disposed above a top surface of thesubstrate 16. In an embodiment, thelanding trace 18 is at least partially embedded into thesubstrate 16. Thelanding trace 18 is formed from a conductive metal such as, for example, copper (Cu), but may be suitably formed from other conductive metals. - Referring back to
FIG. 1 , thelanding trace 18 of theBOT assembly 10 includes anend 24 of thelanding trace 18. Theend 24 may also be referred to a distal end. Theend 24 provides anend surface 26 situated betweenopposing sidewalls 28. In embodiments where thelanding trace 18 is shorter than the neighboringtrace 30, thedistal end 24 of thelanding trace 18 is offset from adistal end 24 of the neighboringtrace 30. In other words, thelanding trace 18 and the neighboringtrace 30 are misaligned relative to one another as positioned on thesubstrate 16. - As shown in
FIGS. 2-3 , theconductive pillar 20 is coupled to the die 14. Theconductive pillar 20 is formed from a conductive metal such as, for example, copper (Cu), but may be suitably formed from other conductive metals. Theconductive pillar 20 may be referred to as a bump or an under bump metallization (UBM). - As shown in
FIGS. 1-2 , theconductive pillar 20 extends to at least thedistal end 24 of thelanding trace 18 and may extend beyond thedistal end 24 in some embodiments. In other words, aperiphery 32 of theconductive pillar 20 at least reaches to theend surface 26 of theunderlying landing trace 18 as shown inFIG. 1 . In an embodiment, theconductive pillar 20 overhangs theunderlying landing trace 18 such that theperiphery 32 of theconductive pillar 20 projects beyond theend surface 26 of theunderlying landing trace 18. In an embodiment, theconductive pillar 20 has awidth 34 that is greater than awidth 36 of theunderlying landing trace 18. - In an embodiment, the
landing trace 18 and theconductive pillar 20 may take a variety of suitable shapes. In other words, thelanding trace 18 and theconductive pillar 20 are not limited to the shape illustrated inFIGS. 1-3 . For example, instead of being rectangular, thelanding trace 18 may be square, round, oval, and so on. In addition, instead of being oval, theconductive pillar 20 may be may be rectangular, square, round, and so on. - As shown in
FIGS. 1-3 , the solder feature 22 (e.g., solder joint) is disposed between and around theconductive pillar 20 and thelanding trace 18. As such, thesolder feature 22 is able to electrically couple theconductive pillar 20 extending from thedie 14 with thelanding trace 18 disposed on thesubstrate 16. - In an embodiment, the solder feature 22 engages and abuts both of the
sidewalls 28 of thelanding trace 18. In an embodiment, the solder feature 22 also engages and abuts theend surface 26 of thelanding trace 18. Thesolder feature 22 may be a solder paste, a solder ball, or another suitable fusible metal alloy used to join components and having a melting point below that of the components. - Because the
conductive pillar 20 extends at least to, and may overhang, thedistal end 24 of thelanding trace 18 as shown inFIGS. 1-2 , thesolder feature 22 is allowed to uniformly disperse on bothsidewalls 28 of thelanding trace 18. With thesolder feature 22 disposed along both of thesidewalls 28, the volume of solder on either side of thelanding trace 18 is reduced compared to when the solder only wets on one of the twosidewalls 28. In other words, the volume of solder is divided between the twosidewalls 28 instead of accumulating along just one of thesidewalls 28. - Because the volume of solder is shared between the two
sidewalls 28 of thelanding trace 18, the distance between thesolder feature 22 and the neighboringtrace 30 is decreased relative to when most or all of thesolder feature 22 collects along only thesidewall 28 of thelanding trace 18 facing the neighboringtrace 30. Therefore, the pitch between the landingtrace 18 and the neighboringtrace 30 can be reduced to, for example, provide for a smalleroverall package 10. - In an embodiment, the volume of solder is shared between the two
sidewalls 28 and theend surface 26 of thelanding trace 18. In such an embodiment, the distance between thesolder feature 22 and the neighboringtrace 30 may be even further decreased relative to when thesolder feature 22 collects along only thesidewall 28 of thelanding trace 18 facing the neighboringtrace 30. - In an embodiment, the
landing trace 18 may be made smaller than the neighboringtrace 30 from the outset. In such circumstances, theportion 38 of thelanding trace 18 depicted by dashed lines inFIG. 4 will not have been created. In another embodiment, thelanding trace 18 and the neighboringlanding trace 18 may have about the same length if there is sufficient room at thedistal end 24 of thelanding trace 18 to permit the conductive pillar to extend to, or overhang, thedistal end 24. In other words, if thedistal end 24 of thelanding trace 18 is spaced apart from a periphery of thesubstrate 16 to allow for a solder connection then thelanding trace 18 and the neighboringlanding trace 18 may have about the same length. - Referring now to
FIGS. 4-6 , an embodiment process flow used to fabricate theBOT assembly 10 ofFIGS. 1-3 is schematically illustrated. As shown inFIG. 4 , thelanding trace 18 and the neighboringtrace 30 are formed on thesubstrate 16. In an embodiment, a portion 38 (represented by dashed lines) of thelanding trace 18 is omitted during the formation process such that thelanding trace 18 is shorter in length than the neighboringtrace 30. - In an embodiment, the
landing trace 18 and the neighboringtrace 30 may be initially formed with the same length and, thereafter, theportion 38 may be removed to provide thelanding trace 18 with a shorter length. Theportion 38 of thelanding trace 18 may be removed by, for example, etching. Theportion 38 of the landing trace may also be suitably removed by a laser cut, laser burn, selective etching process, a mechanical cut, etc. - Referring now to
FIG. 5 , when thelanding trace 18 is made shorter than the neighboringtrace 30 or when theportion 38 of thelanding trace 18 has been removed, an augmented wetting area 40 (shown in dashed lines inFIG. 5 ) is generated or produced. In an embodiment, theaugmented wetting area 40 includes theend surface 26 of thelanding trace 18. In an embodiment, theaugmented wetting area 40 includes theend surface 26 and at least a portion of both of thesidewalls 28 of thelanding trace 18. Theaugmented wetting area 40 provides more area or additional surfaces for thesolder feature 22 to disperse over and around. - Referring now to
FIG. 5 , theconductive pillar 20 is positioned over thelanding trace 18. In an embodiment, theconductive pillar 20 extends at least to thedistal end 24 of thelanding trace 18. In an embodiment, theconductive pillar 20 overhangs thedistal end 24 of thelanding trace 18. In other words, theperiphery 32 of theconductive pillar 20 projects beyond theend surface 26 of theunderlying landing trace 18 as shown inFIG. 5 . - Referring now to
FIG. 6 , after theconductive pillar 20 has been positioned, thesolder feature 22 initially disposed between the landingtrace 18 and theconductive pillar 20 is reflowed. When thesolder feature 22 cools, thelanding trace 18 is electrically coupled to theconductive pillar 20. InFIG. 6 thesolder feature 22 extends along bothsidewalls 28 and theend surface 26 of thelanding trace 18. Therefore, the extrusion of thesolder feature 22 in the direction of the adjacent neighboringtrace 30 is reduced relative to the other BOT interconnections. - As shown in
FIGS. 7-8 , in an embodiment one ormore recesses 42 may be formed in thelanding trace 18 to generate or contribute to the augmented wetting area 40 (shown in dashed lines) of thelanding trace 18. In other words, therecesses 42 may be formed in thelanding trace 18 instead of, or in addition to, removal of theportion 38 of thelanding trace 18 shown inFIG. 4 . Therecesses 42 in thelanding trace 18 provide an area for thesolder feature 22 to occupy upon reflow. As such, the extrusion of thesolder feature 22 in the direction of the adjacent neighboringtrace 30 is reduced relative to the other BOT interconnections. - As shown in
FIG. 7 , therecesses 42 may be formed in a “fish bone” pattern. As shown inFIG. 8 , therecesses 42 may be formed in a “comb” pattern. Therecesses 42 may also be formed in a variety of other suitable patterns. For example, therecesses 42 may be formed in symmetrical or asymmetrical patterns, patterns that have even or uneven spacing betweenrecesses 42, and so on. In addition, therecesses 42 may have a variety of suitable shapes. For example, therecesses 42 may be square, rectangular, semi-circular, oval, and so on. - Referring now to
FIG. 9 , the neighboringtrace 30 is depicted laterally adjacent to thelanding trace 18. As shown, thesolder feature 22 and theconductive pillar 20 are illustrated over thelanding trace 18. Theconductive pillar 20 has a diameter, R. Thelanding trace 18 has a length, L, which represents the portion of thelanding trace 18 within theperiphery 32 of theconductive pillar 20. - In an embodiment, the length, L, of the
landing trace 18 within theperiphery 32 of theconductive pillar 20 is about 20% to about 100% of the diameter, R, of theconductive pillar 20. The 20% lower limit was selected because the total assembly process variation is around 20% of the diameter, R, of theconductive pillar 20. Therefore, in order to ensure that theconductive pillar 20 has a suitable joint on thelanding trace 18, the length, L, of thelanding trace 18 is suggested to be 20% or more of the diameter, R, of theconductive pillar 20. If not, an electric open may be encountered after the assembly process because theconductive pillar 20 does not contact on landingtrace 18. In an embodiment, theconductive pillar 20 is positioned such that the length, L, of thelanding trace 18 within theperiphery 32 of theconductive pillar 20 is less than 100% of the diameter, R, of theconductive pillar 20. In other words, the equation ⅕ R≤L≤R is satisfied. - Referring now to
FIGS. 10-11 , afirst image 44 and asecond image 46 illustrate the increased distance between the solder feature and the neighboring trace when the process described herein is utilized. Indeed, as shown inFIG. 10 , a distance, D1, between the solder feature and the neighboring trace in theBOT interconnection 52 is less than a distance, D2, between the solder feature and the neighboring trace using theembodiment BOT assembly 10. In other words, the distance, D2, inFIG. 11 far exceeds the distance, D1, inFIG. 10 because thesolder feature 22 is encouraged to wet along both sidewalls in theBOT assembly 10 ofFIG. 11 . - In
FIG. 12 , a method 60 of forming theBOT assembly 10 is illustrated. Inblock 62, thelanding trace 18 is formed on thesubstrate 16. Inblock 64, theconductive pillar 20 is positioned over thelanding trace 18 such that theconductive pillar 20 extends at least to theend 24 of thelanding trace 18. Inblock 66, thesolder feature 22 between the landingtrace 18 and theconductive pillar 20 is reflowed to electrically couple thelanding trace 18 to theconductive pillar 20. - In
FIG. 13 , amethod 70 of forming theBOT assembly 10 is illustrated. Inblock 72, thelanding trace 18 is formed on thesubstrate 16. Inblock 74, a portion of thelanding trace 18 is removed to generate anaugmented wetting area 40. Inblock 76, solder is applied over theaugmented wetting area 40 of thelanding trace 18 to electrically couple the landing trace to theconductive pillar 20. - From the foregoing, those of ordinary skill in the art will recognize that the
BOT assembly 10 controls or minimizes solder extrusion. Moreover, theBOT assembly 10 enables solder to more uniformly disperse over the landing trace. Therefore, the potential for the formation of a solder bridge is reduced in fine bump pitch packages. In other words, undesirable solder bridging between adjacent traces in a fine pitch bump (I/O) design is inhibited or prevented. In addition,BOT assembly 10 provides a more robust and reliable electrical interconnection for thepackage 12 by changing existing trace pattern design without substantial additional process cost. - An embodiment method of forming a bump-on-trace (BOT) assembly includes forming a landing trace on a substrate, positioning a conductive pillar over the landing trace such that the conductive pillar extends at least to an end of the landing trace, and reflowing a solder feature between the landing trace and the conductive pillar to electrically couple the landing trace to the conductive pillar.
- An embodiment method of forming a bump-on-trace (BOT) assembly includes forming a landing trace on a substrate, removing a portion of the landing trace to generate an augmented wetting area, and applying solder over the augmented wetting area of the landing trace to electrically couple the landing trace to a conductive pillar.
- An embodiment bump-on-trace (BOT) interconnection for a package includes a landing trace including a distal end, a conductive pillar extending at least to the distal end of the landing trace, and a solder feature electrically coupling the landing trace and the conductive pillar.
- An embodiment structure includes a substrate and a landing trace on the substrate. The landing trace has a first side and a second side opposite to the first side. The landing trace has a plurality of indents extending into the first side in a plan view. The second side is free of indents in the plan view.
- An embodiment structure includes a substrate and a landing trace on the substrate. The landing trace has a first sidewall and a second sidewall opposite to the first sidewall. The first sidewall has a plurality of indents in a plan view. An entirety of the second sidewall is a planar sidewall.
- An embodiment structure includes a substrate and a landing trace on the substrate. The landing trace includes a first portion, a second portion, and a third portion connecting the first portion to the second portion in a plan view. A first sidewall of the first portion is collinear with a first sidewall of the second portion in the plan view. A second sidewall of the first portion is collinear with a second sidewall of the second portion and a second sidewall of the third portion in the plan view. The first sidewall of the third portion has a plurality of indents in the plan view. An entirety of the second sidewall of the third portion is a planar sidewall.
- While the disclosure provides illustrative embodiments, this description is not intended to be construed in a limiting sense. Various modifications and combinations of the illustrative embodiments, as well as other embodiments, will be apparent to persons of ordinary skill in the art upon reference to the description. It is therefore intended that the appended claims encompass any such modifications or embodiments.
Claims (20)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/390,953 US20190252347A1 (en) | 2013-12-30 | 2019-04-22 | Trace Design for Bump-on-Trace (BOT) Assembly |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/143,648 US20150187719A1 (en) | 2013-12-30 | 2013-12-30 | Trace Design for Bump-on-Trace (BOT) Assembly |
| US15/456,134 US10269759B2 (en) | 2013-12-30 | 2017-03-10 | Trace design for bump-on-trace (BOT) assembly |
| US16/390,953 US20190252347A1 (en) | 2013-12-30 | 2019-04-22 | Trace Design for Bump-on-Trace (BOT) Assembly |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US15/456,134 Continuation US10269759B2 (en) | 2013-12-30 | 2017-03-10 | Trace design for bump-on-trace (BOT) assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20190252347A1 true US20190252347A1 (en) | 2019-08-15 |
Family
ID=53372197
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US14/143,648 Abandoned US20150187719A1 (en) | 2013-12-30 | 2013-12-30 | Trace Design for Bump-on-Trace (BOT) Assembly |
| US15/456,134 Active 2034-01-07 US10269759B2 (en) | 2013-12-30 | 2017-03-10 | Trace design for bump-on-trace (BOT) assembly |
| US16/390,953 Abandoned US20190252347A1 (en) | 2013-12-30 | 2019-04-22 | Trace Design for Bump-on-Trace (BOT) Assembly |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US14/143,648 Abandoned US20150187719A1 (en) | 2013-12-30 | 2013-12-30 | Trace Design for Bump-on-Trace (BOT) Assembly |
| US15/456,134 Active 2034-01-07 US10269759B2 (en) | 2013-12-30 | 2017-03-10 | Trace design for bump-on-trace (BOT) assembly |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US20150187719A1 (en) |
| CN (2) | CN111403304B (en) |
| DE (1) | DE102014118941A1 (en) |
| TW (1) | TWI550767B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10833033B2 (en) * | 2011-07-27 | 2020-11-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bump structure having a side recess and semiconductor structure including the same |
| US20150187719A1 (en) * | 2013-12-30 | 2015-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Trace Design for Bump-on-Trace (BOT) Assembly |
| US10263106B2 (en) * | 2017-03-31 | 2019-04-16 | Intel IP Corporation | Power mesh-on-die trace bumping |
| WO2019242752A1 (en) * | 2018-06-21 | 2019-12-26 | 矽创电子股份有限公司 | Bump structure |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100817646B1 (en) * | 2000-03-10 | 2008-03-27 | 스태츠 칩팩, 엘티디. | Flip chip interconnect structure |
| US6664483B2 (en) * | 2001-05-15 | 2003-12-16 | Intel Corporation | Electronic package with high density interconnect and associated methods |
| US8076232B2 (en) * | 2008-04-03 | 2011-12-13 | Stats Chippac, Ltd. | Semiconductor device and method of forming composite bump-on-lead interconnection |
| US8574959B2 (en) * | 2003-11-10 | 2013-11-05 | Stats Chippac, Ltd. | Semiconductor device and method of forming bump-on-lead interconnection |
| US8841779B2 (en) * | 2005-03-25 | 2014-09-23 | Stats Chippac, Ltd. | Semiconductor device and method of forming high routing density BOL BONL and BONP interconnect sites on substrate |
| US9258904B2 (en) * | 2005-05-16 | 2016-02-09 | Stats Chippac, Ltd. | Semiconductor device and method of forming narrow interconnect sites on substrate with elongated mask openings |
| JP2008186876A (en) * | 2007-01-29 | 2008-08-14 | Alps Electric Co Ltd | Electronic component and manufacturing method thereof |
| US9345148B2 (en) * | 2008-03-25 | 2016-05-17 | Stats Chippac, Ltd. | Semiconductor device and method of forming flipchip interconnection structure with bump on partial pad |
| US8198186B2 (en) * | 2008-12-31 | 2012-06-12 | Stats Chippac, Ltd. | Semiconductor device and method of confining conductive bump material during reflow with solder mask patch |
| US9129955B2 (en) * | 2009-02-04 | 2015-09-08 | Texas Instruments Incorporated | Semiconductor flip-chip system having oblong connectors and reduced trace pitches |
| US8390119B2 (en) * | 2010-08-06 | 2013-03-05 | Mediatek Inc. | Flip chip package utilizing trace bump trace interconnection |
| US8435834B2 (en) | 2010-09-13 | 2013-05-07 | Stats Chippac, Ltd. | Semiconductor device and method of forming bond-on-lead interconnection for mounting semiconductor die in FO-WLCSP |
| US8441127B2 (en) | 2011-06-29 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bump-on-trace structures with wide and narrow portions |
| TW201306203A (en) * | 2011-07-22 | 2013-02-01 | 力成科技股份有限公司 | Semiconductor package structure that avoids solder bridging metal posts |
| US8952529B2 (en) * | 2011-11-22 | 2015-02-10 | Stats Chippac, Ltd. | Semiconductor device with conductive layer over substrate with vents to channel bump material and reduce interconnect voids |
| US8664041B2 (en) * | 2012-04-12 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for designing a package and substrate layout |
| US20150187719A1 (en) * | 2013-12-30 | 2015-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Trace Design for Bump-on-Trace (BOT) Assembly |
-
2013
- 2013-12-30 US US14/143,648 patent/US20150187719A1/en not_active Abandoned
-
2014
- 2014-08-28 CN CN202010223888.0A patent/CN111403304B/en active Active
- 2014-08-28 CN CN201410431316.6A patent/CN104752336A/en active Pending
- 2014-12-18 DE DE102014118941.8A patent/DE102014118941A1/en active Granted
- 2014-12-22 TW TW103144811A patent/TWI550767B/en active
-
2017
- 2017-03-10 US US15/456,134 patent/US10269759B2/en active Active
-
2019
- 2019-04-22 US US16/390,953 patent/US20190252347A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| US10269759B2 (en) | 2019-04-23 |
| TWI550767B (en) | 2016-09-21 |
| CN111403304A (en) | 2020-07-10 |
| US20170186723A1 (en) | 2017-06-29 |
| CN104752336A (en) | 2015-07-01 |
| DE102014118941A1 (en) | 2015-07-02 |
| TW201546956A (en) | 2015-12-16 |
| CN111403304B (en) | 2023-05-05 |
| US20150187719A1 (en) | 2015-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10153243B2 (en) | Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices | |
| TWI567864B (en) | Semiconductor device and method for forming high-wound density interconnection locations on a substrate | |
| US9536850B2 (en) | Package having substrate with embedded metal trace overlapped by landing pad | |
| US6259608B1 (en) | Conductor pattern for surface mount devices and method therefor | |
| US10163844B2 (en) | Semiconductor device having conductive bumps of varying heights | |
| US8598691B2 (en) | Semiconductor devices and methods of manufacturing and packaging thereof | |
| US20190252347A1 (en) | Trace Design for Bump-on-Trace (BOT) Assembly | |
| US5926731A (en) | Method for controlling solder bump shape and stand-off height | |
| KR20120052844A (en) | Semiconductor device and method of forming flipchip interconnect structure | |
| TW201413899A (en) | Bump structure and its forming method | |
| KR20120061713A (en) | Semiconductor device and method of forming bump-on-lead interconnection | |
| CN102856262B (en) | Bump-on-trace structures with increased current entrance areas | |
| US8786109B2 (en) | Conductive structure and method for forming the same | |
| US9559076B2 (en) | Package having substrate with embedded metal trace overlapped by landing pad | |
| US20120161312A1 (en) | Non-solder metal bumps to reduce package height | |
| CN104851865A (en) | Flip-chip package substrate, flip-chip package and manufacturing method thereof | |
| TW201225209A (en) | Semiconductor device and method of confining conductive bump material with solder mask patch | |
| CN1929092A (en) | Bump process and its structure | |
| KR20110013902A (en) | Package and manufacturing method | |
| KR100959856B1 (en) | Printed Circuit Board Manufacturing Method | |
| CN108573879A (en) | electronic package | |
| TWI538129B (en) | Semiconductor device and method for forming narrow interconnection locations on a substrate using elongated mask openings | |
| JP2009081153A (en) | Semiconductor device and circuit device mounted with semiconductor device | |
| KR100608360B1 (en) | How to form solder structures for semiconductor devices | |
| KR100878947B1 (en) | Solder bumps and their formation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE AFTER FINAL ACTION FORWARDED TO EXAMINER |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: ADVISORY ACTION MAILED |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE AFTER FINAL ACTION FORWARDED TO EXAMINER |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: ADVISORY ACTION MAILED |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
| STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |