[go: up one dir, main page]

US20170301928A1 - Device and method for maskless thin film etching - Google Patents

Device and method for maskless thin film etching Download PDF

Info

Publication number
US20170301928A1
US20170301928A1 US15/339,153 US201615339153A US2017301928A1 US 20170301928 A1 US20170301928 A1 US 20170301928A1 US 201615339153 A US201615339153 A US 201615339153A US 2017301928 A1 US2017301928 A1 US 2017301928A1
Authority
US
United States
Prior art keywords
ablation tool
suction member
gas
gas jet
ablation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15/339,153
Other languages
English (en)
Inventor
Michael Yu-Tak Young
Jeffrey L. Franklin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Elevated Materials US LLC
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to US15/339,153 priority Critical patent/US20170301928A1/en
Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FRANKLIN, JEFFREY L., YOUNG, MICHAEL YU-TAK
Priority to TW106111996A priority patent/TW201803189A/zh
Priority to PCT/US2017/027536 priority patent/WO2017180942A1/en
Publication of US20170301928A1 publication Critical patent/US20170301928A1/en
Assigned to ELEVATED MATERIALS US LLC reassignment ELEVATED MATERIALS US LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: APPLIED MATERIALS, INC.
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/20—Mountings; Secondary casings or frames; Racks, modules or packs; Suspension devices; Shock absorbers; Transport or carrying devices; Holders
    • H01M50/233—Mountings; Secondary casings or frames; Racks, modules or packs; Suspension devices; Shock absorbers; Transport or carrying devices; Holders characterised by physical properties of casings or racks, e.g. dimensions
    • H01M50/24—Mountings; Secondary casings or frames; Racks, modules or packs; Suspension devices; Shock absorbers; Transport or carrying devices; Holders characterised by physical properties of casings or racks, e.g. dimensions adapted for protecting batteries from their environment, e.g. from corrosion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/16—Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infrared heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/04—Construction or manufacture in general
    • H01M10/0436—Small-sized flat cells or batteries for portable equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/058—Construction or manufacture
    • H01M10/0585—Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/381—Alkaline or alkaline earth metals elements
    • H01M4/382—Lithium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
    • H01M4/52—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron
    • H01M4/525—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/102—Primary casings; Jackets or wrappings characterised by their shape or physical structure
    • H01M50/11—Primary casings; Jackets or wrappings characterised by their shape or physical structure having a chip structure, e.g. micro-sized batteries integrated on chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/116—Primary casings; Jackets or wrappings characterised by the material
    • H01M50/117—Inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/116—Primary casings; Jackets or wrappings characterised by the material
    • H01M50/117—Inorganic material
    • H01M50/119—Metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
    • H01M50/10—Primary casings; Jackets or wrappings
    • H01M50/116—Primary casings; Jackets or wrappings characterised by the material
    • H01M50/124—Primary casings; Jackets or wrappings characterised by the material having a layered structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/005—Devices for making primary cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/14—Cells with non-aqueous electrolyte
    • H01M6/18—Cells with non-aqueous electrolyte with solid electrolyte
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/14—Cells with non-aqueous electrolyte
    • H01M6/18—Cells with non-aqueous electrolyte with solid electrolyte
    • H01M6/188—Processes of manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/40—Printed batteries, e.g. thin film batteries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles, e.g. plated or painted; Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B23K2201/34—
    • B23K2201/36—
    • B23K2203/172—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2995/00—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds
    • B29K2995/0003—Properties of moulding materials, reinforcements, fillers, preformed parts or moulds having particular electrical or magnetic properties, e.g. piezoelectric
    • B29K2995/0006—Dielectric
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/34—Electrical apparatus, e.g. sparking plugs or parts thereof
    • B29L2031/3468—Batteries, accumulators or fuel cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2220/00—Batteries for particular applications
    • H01M2220/30—Batteries in portable systems, e.g. mobile phone, laptop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2300/00—Electrolytes
    • H01M2300/0017—Non-aqueous electrolytes
    • H01M2300/0065—Solid electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2300/00—Electrolytes
    • H01M2300/0017—Non-aqueous electrolytes
    • H01M2300/0065—Solid electrolytes
    • H01M2300/0068—Solid electrolytes inorganic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00—Road transport of goods or passengers
    • Y02T10/60—Other road transportation technologies with climate change mitigation effect
    • Y02T10/70—Energy storage systems for electromobility, e.g. batteries

Definitions

  • the present embodiments relate generally to the fabrication of thin film devices, and more particularly to maskless etching devices and techniques for the fabrication of thin film batteries.
  • TFBs Solid state thin film batteries
  • An embodiment of a TFB may include a plurality of layers disposed in a stacked arrangement, such layers including a cathode current collector layer, a cathode layer, a solid state electrolyte, an anode layer, an anode current collector layer, and an encapsulation layer, for example.
  • These layers are commonly formed by successive deposition of the layers on a substrate using a deposition tool. After certain layers are deposited, portions of the layers may be removed or “etched” before additional layers are deposited. In this manner a TFB having a predetermined layer profile or architecture may be achieved.
  • etching of TFB layers has traditionally been accomplished using so-called “masked” etching techniques involving the use of a physical mask placed over a layer (or layers) to be etched.
  • the mask covers certain portions of the layer and leaves other portions exposed.
  • the masked layer is subjected to a blanket ablation (e.g., via exposure to heat, solvent, ion bombardment, etc.), resulting in the exposed portions of the masked layer being removed while the covered portions are left intact.
  • maskless etching techniques have been developed for selectively removing portions of TFB layers during manufacture.
  • Maskless etching involves the use of a precision ablation tool (e.g., a laser) to etch discrete portions of a TFB layer (or layers) while leaving other portions of the layer intact.
  • a precision ablation tool e.g., a laser
  • HAZs heat affected zones
  • a laser ablation tool can also disperse ablated particulate matter in the vicinity an ablation beam path. Either of these phenomena can facilitate the propagation of leakage currents in an affected layer, resulting in a defective or sub-standard TFB.
  • An exemplary embodiment of a device for maskless thin film etching in accordance with the present disclosure may include an ablation tool, a gas jet associated with a source of carrier gas and adapted to emit a stream of the carrier gas, and a suction member associated with a vacuum source and adapted to collect gas and particulate.
  • the ablation tool, the gas jet, and the suction member are mounted adjacent one another.
  • a device for maskless thin film etching may include an ablation tool adapted to emit an ablative output for etching a surface.
  • the device may further include a gas jet associated with a source of carrier gas and adapted to emit a stream of the carrier gas at an area of the surface where the output of the ablation tool impinges.
  • the device may further include a suction member associated with a vacuum source and adapted to collect ablated particulate from the area of the surface where the output of the ablation tool impinges.
  • the ablation tool, the gas jet, and the suction member are mounted adjacent one another.
  • An exemplary embodiment of a method for maskless thin film etching in accordance with the present disclosure may include positioning an ablation tool adjacent a surface to be etched.
  • the method may further include positioning a gas jet adjacent the ablation tool, wherein the gas jet is associated with a source of carrier gas and is adapted to emit a stream of the carrier gas, and positioning a suction member adjacent the ablation tool, wherein the suction member associated with a vacuum source and is adapted to collect gas and particulate.
  • FIG. 1 is a cross-sectional view illustrating an exemplary thin-film battery structure contemplated for fabrication by the disclosed device and method
  • FIG. 2 is a schematic illustration of an exemplary embodiment of an etching device in accordance with the present disclosure
  • FIG. 3 is a flow diagram illustrating an exemplary method in accordance with the present disclosure.
  • the present disclosure relates to a device and method for masklessly etching layers of thin film batteries (TFBs) during manufacture.
  • the disclosed device and method are directed toward mitigating manufacturing defects associated with maskless ablation techniques, and specifically those defects stemming from plasma generation and re-deposition of ablated particulate in the vicinity of an ablated area of a TFB layer.
  • the disclosed device and method may include an ablation tool (e.g., a laser) for etching discrete, predetermined portions of the layers of a TFB after the layers have been deposited on a substrate.
  • the disclosed device and method further include a gas jet and a suction member disposed adjacent the ablation tool.
  • the gas jet may be coupled to a gas source containing a pressurized carrier gas and may be configured to direct a stream of the pressurized carrier gas toward a point where the ablation tool impinges on an ablated surface (e.g., a surface of a layer of a TFB).
  • the suction member may be coupled to a vacuum source and may be configured to draw gas and particulate away from the point where the ablation tool impinges on an ablated surface.
  • the pressurized carrier gas emitted from the gas jet may provide a medium for entraining ablated particulate generated by the ablation tool, and the suction member may evacuate the carrier gas and the entrained particulate from the ablation site. The ablated particulate is thus prevented from redepositing on the etched surface.
  • the carrier gas may be an inert gas selected for an ability to suppress plasma formation in the vicinity of the ablation site for mitigating the creation of heat affected zones (HAZs) in surrounding portions of the etched surface.
  • FIG. 1 illustrates a cross-sectional view of a non-limiting, exemplary TFB 10 amenable to fabrication using the device and method described herein.
  • the illustrated TFB 10 may include a stack of layers 12 fabricated on a substrate 14 .
  • the stack of layers 12 may include a cathode current collector (CCC) layer 16 , a cathode layer 18 , a solid state electrolyte layer 20 , an anode/anode current collector (ACC) layer 24 , and an encapsulation layer 26 .
  • CCC cathode current collector
  • ACC anode/anode current collector
  • the encapsulation layer 26 may be formed of a plurality of alternating polymer and dielectric layers 28 , 29 for providing the encapsulation layer 26 with resiliency to accommodate thermal expansion and contraction of the TFB 10 .
  • the CCC may be formed of a metal layer (e.g., Au or Pt) or a plurality of metal layers (e.g., Ti and Au or Ti and Pt) capable of good adhesion to the substrate 14 and capable of withstanding high temperature annealing of the cathode layer 18 .
  • the cathode layer 18 may be formed of lithium cobalt oxide (LiCoO 2 ) or a similar material.
  • the solid state electrolyte layer 20 may be formed of lithium phosphorus oxynitride (LiPON) or similar material.
  • the ACC layer 24 may be formed of copper or similar material.
  • the device and method disclosed herein may be utilized to etch portions of the various layers 12 of the TFB 10 as the various layers 12 are deposited atop the substrate 14 (e.g., in between depositions) to achieve a predetermined TFB architecture.
  • the TFB 10 depicted in FIG. 1 has a so-called “non-coplanar” architecture wherein the CCC layer 16 is not coplanar with the ACC layer 24 .
  • FIG. 1 merely illustrates one possible arrangement for a TFB architecture amendable to fabrication using the device and method described below, and those of ordinary skill in the art will appreciate the concepts disclosed herein can be implemented to achieve various other TFB architectures.
  • a non-limiting example of such an alternative architecture is a so-called “coplanar” architecture having a CCC layer coplanar with an ACC layer.
  • the device 30 may generally include an ablation tool 32 , a gas jet 34 , and a suction member 36 mounted adjacent one another on a movable carrier arm 38 .
  • the carrier arm 38 may be adapted to selectively move the ablation tool 32 , gas jet 34 , and suction member 36 vertically and horizontally relative to a surface 44 (e.g., a surface of a layer of a TFB) to be etched as further described below.
  • the device 30 may have a fixed, static position (e.g., omitting a movable carrier arm) and the surface 44 may be vertically and horizontally movable relative to the device 30 .
  • the device 30 and the surface 44 may be movable.
  • the ablation tool 32 may be, and will be described hereinafter as, a laser adapted to emit a laser beam 46 from a tip 48 of the ablation tool 32 as shown in FIG. 2 .
  • the ablation tool 32 may be any type of precision ablation device, such as a media jet or blaster adapted to emit a jet of abrasive media (e.g., silica sand) suspended in a stream of pressurized gas.
  • abrasive media e.g., silica sand
  • the etching device 30 may include a laser and a media jet capable of being implemented selectively and interchangeably.
  • the laser may be a laser scanner independent of the carrier arm 38 and capable of scanning a laser beam at speeds of 50 meters per second or higher, much faster than can be achieved through mechanical movement of the carrier arm 38 .
  • the ablation tool 32 may be operably connected to an electrical power source 50 and to a controller 52 .
  • the controller 52 may be adapted to dictate operation of the carrier arm 38 and the ablation tool 32 in a predetermined or preprogrammed manner, such as to etch a predefined pattern in the surface 44 .
  • the ablation tool 32 is a media blaster or a similar device configured to emit a jet of abrasive media
  • the ablation tool 32 may additionally be coupled to a pressurized gas source and to a source of abrasive media (not shown) as may be appropriate.
  • the gas jet 34 of the device 30 may be coupled to a pressurized carrier gas source 54 and may be configured to emit a stream 56 of pressurized carrier gas from a tip 58 of the gas jet 34 disposed in close proximity to (e.g., in a range of 0.25 millimeters to 300 millimeters from) the tip 48 of the ablation tool 32 .
  • the stream 56 may be directed toward an area 58 of the surface 44 where the laser beam 46 emitted by the ablation tool 32 impinges.
  • the gas jet 34 may further be coupled to the controller 52 , wherein the controller 52 may be configured to dictate operation of the gas jet 34 .
  • the controller 52 may be configured to operate the gas jet 34 in concert with the ablation tool 32 , with the gas jet 34 being activated when the ablation tool 32 is active.
  • the controller 52 may be configured to activate the gas jet 34 a predetermined amount of time before or after activation of the ablation tool 32 , and may be configured to deactivate the gas jet 34 a predetermined amount of time before or after deactivation of the ablation tool 32 .
  • the embodiments of the present disclosure are not limited in this regard.
  • the carrier gas emitted by the gas jet 34 may be any gas suitable for use within the vicinity of the surface 44 .
  • gases include, with, clean dry air (CDA) with less than or equal to 8% moisture content, argon gas, nitrogen gas, etc.
  • the carrier gas may be specifically selected for an ability to suppress the formation of laser-induced plasma at the area 58 where the laser beam 46 emitted by the ablation tool 32 impinges.
  • Non-limiting examples of such inert gases include Argon, Nitrogen, etc.
  • the suppression of laser-induced plasma at the area 58 may mitigate the formation of HAZs in surrounding portions of the surface 44 .
  • the carrier gas may be selected based on factors such as the type and power of the laser emitted by the ablation tool 32 , the nature of the environment of the surface 44 , the material of the surface 44 , etc.
  • the suction member 36 of the device 30 may be coupled to a vacuum source 60 and may be configured to collect gas and/or particulate (as further described below) at an inlet 62 of the suction member 36 disposed in close proximity to (e.g., in a range of 0.25 millimeters to 300 millimeters from) the tip 48 of the ablation tool 32 .
  • the inlet 62 may be disposed in the path of the stream 56 of carrier gas emitted by the gas jet 34 and may be directed toward the area 58 where the laser beam 46 impinges on the surface 44 .
  • the suction member 36 may further be coupled to the controller 52 , wherein the controller 52 may be configured to dictate operation of the suction member 36 .
  • the controller 52 may be configured to operate the suction member 36 in concert with the ablation tool 32 and/or the gas jet 34 , with the suction member 36 being activated when the ablation tool 32 and/or the gas jet 34 are active.
  • the controller 52 may be configured to activate the suction member 36 a predetermined amount of time before or after activation of the ablation tool 32 and/or the gas jet 34 , and may be configured to deactivate the suction member 36 a predetermined amount of time before or after deactivation of the ablation tool 32 and/or the gas jet 34 .
  • the embodiments of the present disclosure are not limited in this regard.
  • the suction member 36 may collect vapor and ablated particulate from the impingement area 58 , wherein the ablated particulate may be suspended in the stream 56 of pressurized carrier gas emitted from the gas jet 34 .
  • the ablation tool 32 is a media blaster or a similar device configured to emit a jet of abrasive media
  • the suction member 36 may collect the media emitted by the ablation tool 32 (i.e., after the media has impinged on the surface 44 ) as well as any gas suspending the media.
  • the media and the suspension gas may be directed toward the inlet 62 of the suction member 36 by the stream 56 of the pressurized carrier gas emitted from the gas jet 34 .
  • the suction member 36 may prevent ablated particulate and any abrasive media (if abrasive media is used) from depositing on the surface 44 , mitigating any undesirable effects associated with such deposition.
  • the suction member 36 may also prevent the distribution and accumulation of carrier gas emitted by the gas jet 34 in the environment of the surface 44 .
  • FIG. 3 a flow diagram illustrating an exemplary embodiment of a method for implementing the device 30 in accordance with the present disclosure is shown. The method will now be described in detail in conjunction with the schematic representation of the device 30 shown in FIG. 2 .
  • the carrier arm 38 of the device 30 may be operated move the ablation tool 32 , the gas jet 34 , and the suction member 36 to a designated position above a surface (e.g., the surface 44 shown in FIG. 2 ) to be etched.
  • the movement of the carrier arm 38 may be dictated and coordinated by the controller 52 , and the designated position may be a position wherein the tip 48 of the ablation tool 32 is positioned directly above a starting point of a predetermined pattern to be etched in the surface 44 .
  • the ablation tool 32 may be activated (e.g., by the controller 52 ) and may emit a laser beam 46 (if the ablation tool 32 is a laser) or a jet of abrasive media (if the ablation tool 32 is media jet or blaster), collectively referred to as an “output” of the ablation tool 32 , to etch an area 58 of the surface 44 where the output impinges.
  • a laser beam 46 if the ablation tool 32 is a laser
  • a jet of abrasive media if the ablation tool 32 is media jet or blaster
  • the gas jet 34 may be activated (e.g., by the controller 52 ) and may emit the stream 56 of pressurized carrier gas from the tip 58 of the gas jet 34 toward the impingement area 58 on the surface 44 .
  • the gas jet 34 may be operated in concert with the ablation tool 32 , with the gas jet 34 being activated when the ablation tool 32 is activated.
  • the gas jet 34 may be activated a predetermined amount of time before or after activation of the ablation tool 32 .
  • stream 56 of carrier gas may entrain ablated particulate adjacent the impingement area 58 .
  • the carrier gas may suppress the formation of laser-induced plasma at the impingement area 58 , mitigating the formation of HAZs adjacent the impingement area 58 .
  • the suction member 36 may be activated (e.g., by the controller 52 ) and may collect vapor and ablated particulate from the impingement area 58 , wherein the ablated particulate may be suspended in the stream 56 of pressurized carrier gas emitted from the gas jet 34 .
  • the ablation tool 32 is a media blaster or a similar device configured to emit a jet of abrasive media
  • the suction member 36 may collect the media emitted by the ablation tool 32 (i.e., after the media has impinged on the surface 44 ) as well as any gas suspending the media.
  • the media and the suspension gas may be directed toward the inlet 62 of the suction member 36 by the stream 56 of the pressurized carrier gas emitted from the gas jet 34 .
  • the suction member 36 may prevent ablated particulate and abrasive media (if abrasive media is used) from depositing on the surface 44 , mitigating any undesirable effects associated with such deposition.
  • the suction member 36 may also prevent the distribution and accumulation of carrier gas emitted by the gas jet 34 in the environment of the surface 44 .
  • the suction member 36 may be operated in concert with the ablation tool 32 and/or the gas jet 34 , with the suction member 36 being activated when the ablation tool 32 and/or the gas jet 34 are activated. In various embodiments, the suction member 36 may be activated a predetermined amount of time before or after activation of the ablation tool 32 and/or the gas jet 34 .
  • the controller 52 may operate the carrier arm 38 to move the ablation tool 32 , the gas jet 34 , and the suction member 36 along a predetermined path relative to the surface 44 , such as for etching a predetermined pattern in the surface 44 .
  • the active ablation tool 32 may be moved along a path defining the predetermined pattern.
  • the controller 52 may operate the ablation tool 32 to impinge on the surface 44 in the predefined pattern.
  • the predefined pattern may be stored in a memory of the controller 52 or may be communicated to the controller 52 via external input means, for example.
  • the active gas jet 34 and suction member 36 may operate in the manner described above to collect vapor and particulate and to suppress the formation of laser-induced plasma in the etched surface 44 .
  • the ablation tool 32 , the gas jet 34 , and the suction member 36 may be deactivated (e.g., by the controller 52 ).
  • the gas jet 34 may be activated a predetermined amount of time before or after deactivation of the ablation tool 32
  • the suction member 36 may be deactivated a predetermined amount of time before or after deactivation of the ablation tool 32 and/or the gas jet 34 .
  • the device and method of the present disclosure provide numerous advantages. These include precise, maskless etching of a TFB layer while suppressing the formation of laser-induced plasma (in the case of laser ablation) and preventing the deposition of etched material on the etched layer.
  • the device and method of the present disclosure further facilitate high-precision ablation of a TFB layer using abrasive media while preventing the deposition of the abrasive media on the etched layer. HAZs and leakage currents in etched layers are thus mitigated, facilitating the manufacture of better performing and more reliable TFBs.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Secondary Cells (AREA)
  • Sealing Battery Cases Or Jackets (AREA)
  • Cell Electrode Carriers And Collectors (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Battery Mounting, Suspending (AREA)
  • Laser Beam Processing (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Laminated Bodies (AREA)
  • Thin Film Transistor (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
US15/339,153 2016-04-14 2016-10-31 Device and method for maskless thin film etching Abandoned US20170301928A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US15/339,153 US20170301928A1 (en) 2016-04-14 2016-10-31 Device and method for maskless thin film etching
TW106111996A TW201803189A (zh) 2016-04-14 2017-04-11 用於無遮罩薄膜蝕刻的裝置和方法
PCT/US2017/027536 WO2017180942A1 (en) 2016-04-14 2017-04-14 Device and method for maskless thin film etching

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662322415P 2016-04-14 2016-04-14
US15/339,153 US20170301928A1 (en) 2016-04-14 2016-10-31 Device and method for maskless thin film etching

Publications (1)

Publication Number Publication Date
US20170301928A1 true US20170301928A1 (en) 2017-10-19

Family

ID=60038434

Family Applications (11)

Application Number Title Priority Date Filing Date
US15/339,153 Abandoned US20170301928A1 (en) 2016-04-14 2016-10-31 Device and method for maskless thin film etching
US15/339,007 Abandoned US20170301893A1 (en) 2016-04-14 2016-10-31 Energy storage device with wraparound encapsulation
US15/339,168 Abandoned US20170301926A1 (en) 2016-04-14 2016-10-31 System and method for maskless thin film battery fabrication
US15/339,187 Active 2037-08-27 US10547040B2 (en) 2016-04-14 2016-10-31 Energy storage device having an interlayer between electrode and electrolyte layer
US15/338,950 Abandoned US20170301897A1 (en) 2016-04-14 2016-10-31 Thin film device encapsulation using volume change accommodating materials
US15/338,996 Abandoned US20170301956A1 (en) 2016-04-14 2016-10-31 Thin film battery device having recessed substrate and method of formation
US15/339,121 Abandoned US20170301895A1 (en) 2016-04-14 2016-10-31 Energy storage device with encapsulation anchoring
US15/338,958 Abandoned US20170301892A1 (en) 2016-04-14 2016-10-31 Multilayer thin film device encapsulation using soft and pliable layer first
US15/338,977 Abandoned US20170301955A1 (en) 2016-04-14 2016-10-31 Thin film battery device and method of formation
US15/338,969 Abandoned US20170301954A1 (en) 2016-04-14 2016-10-31 Thin film battery device and method of formation
US15/462,209 Abandoned US20170301894A1 (en) 2016-04-14 2017-03-17 Multilayer thin film device encapsulation using soft and pliable layer first

Family Applications After (10)

Application Number Title Priority Date Filing Date
US15/339,007 Abandoned US20170301893A1 (en) 2016-04-14 2016-10-31 Energy storage device with wraparound encapsulation
US15/339,168 Abandoned US20170301926A1 (en) 2016-04-14 2016-10-31 System and method for maskless thin film battery fabrication
US15/339,187 Active 2037-08-27 US10547040B2 (en) 2016-04-14 2016-10-31 Energy storage device having an interlayer between electrode and electrolyte layer
US15/338,950 Abandoned US20170301897A1 (en) 2016-04-14 2016-10-31 Thin film device encapsulation using volume change accommodating materials
US15/338,996 Abandoned US20170301956A1 (en) 2016-04-14 2016-10-31 Thin film battery device having recessed substrate and method of formation
US15/339,121 Abandoned US20170301895A1 (en) 2016-04-14 2016-10-31 Energy storage device with encapsulation anchoring
US15/338,958 Abandoned US20170301892A1 (en) 2016-04-14 2016-10-31 Multilayer thin film device encapsulation using soft and pliable layer first
US15/338,977 Abandoned US20170301955A1 (en) 2016-04-14 2016-10-31 Thin film battery device and method of formation
US15/338,969 Abandoned US20170301954A1 (en) 2016-04-14 2016-10-31 Thin film battery device and method of formation
US15/462,209 Abandoned US20170301894A1 (en) 2016-04-14 2017-03-17 Multilayer thin film device encapsulation using soft and pliable layer first

Country Status (3)

Country Link
US (11) US20170301928A1 (zh)
TW (11) TW201737530A (zh)
WO (11) WO2017180962A2 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10315273B2 (en) * 2015-08-11 2019-06-11 Disco Corporation Laser processing apparatus
US10950912B2 (en) 2017-06-14 2021-03-16 Milwaukee Electric Tool Corporation Arrangements for inhibiting intrusion into battery pack electrical components
JP2025518928A (ja) * 2022-06-14 2025-06-19 エルジー エナジー ソリューション リミテッド レーザエッチング装置、レーザエッチングシステム、レーザを用いてエッチングされた電極、およびその電極の製造方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10658702B2 (en) * 2017-10-02 2020-05-19 International Business Machines Corporation High-performance thin-film battery with an interfacial layer
JP7032173B2 (ja) * 2018-02-27 2022-03-08 株式会社ジャパンディスプレイ 表示装置
CN109004283B (zh) * 2018-07-26 2022-02-01 京东方科技集团股份有限公司 一种全固态锂电池及其制备方法
US11101513B2 (en) * 2018-09-04 2021-08-24 International Business Machines Corporation Thin film battery packaging
KR20200049115A (ko) 2018-10-31 2020-05-08 엘지디스플레이 주식회사 투명 유기 발광 표시 장치 및 이의 제조방법
US10903526B2 (en) 2018-11-30 2021-01-26 International Business Machines Corporation Electron device stack structure
CN109909621A (zh) * 2019-04-23 2019-06-21 夏士桀 一种用于太阳能薄膜电池生产的激光刻膜设备
US11581561B2 (en) * 2019-06-03 2023-02-14 Kyocera Corporation Cell, cell stack device, module, and module housing device
US12125975B2 (en) 2019-07-29 2024-10-22 TeraWatt Technology Inc. Phase-change electrolyte separator for a solid-state battery
US12412901B2 (en) 2019-07-29 2025-09-09 TeraWatt Technology Inc. Interfacial bonding layer for an anode-free solid-state-battery
US12406997B2 (en) 2019-07-29 2025-09-02 TeraWatt Technology Inc. Anode-free solid state battery having a pseudo-solid lithium gel layer
US11271253B2 (en) 2019-07-29 2022-03-08 TeraWatt Technology Inc. Cylindrical anode-free solid state battery having a pseudo-solid lithium gel layer
CN115104220B (zh) * 2019-09-12 2025-07-22 新泰克电池股份有限公司 用于电池电芯的混合电极及其生产方法
JP7207248B2 (ja) * 2019-09-24 2023-01-18 トヨタ自動車株式会社 全固体電池
GB2590374B (en) * 2019-12-11 2022-03-30 Dyson Technology Ltd Energy storage device
KR102807488B1 (ko) * 2019-12-23 2025-05-13 주식회사 엘지에너지솔루션 레이저를 이용한 이차전지용 전극의 제조장치와 제조방법, 및 이에 의해 제조된 이차전지용 전극
CN111497472A (zh) * 2020-04-24 2020-08-07 合肥利晟激光科技有限公司 一种全自动激光打码机
EP3944388A1 (en) * 2020-07-22 2022-01-26 ETH Zurich Method, coating device and preparation for forming functional layers of an electrochemical storage device
JP7517242B2 (ja) * 2021-04-27 2024-07-17 トヨタ自動車株式会社 全固体電池
GB2608605A (en) * 2021-07-05 2023-01-11 Daimler Ag Anode-free Rechargeable battery cell
FR3153694B1 (fr) * 2023-09-29 2026-01-02 Commissariat Energie Atomique Batterie en couches solides, et son procede d’obtention

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266769A (en) * 1992-02-25 1993-11-30 International Business Machines Corporation Process for independent control of crown and camber for magnetic head slider
US5359176A (en) * 1993-04-02 1994-10-25 International Business Machines Corporation Optics and environmental protection device for laser processing applications
US20030012734A1 (en) * 1996-09-23 2003-01-16 Incept Llc. Biocompatible crosslinked polymers
US20030062126A1 (en) * 2001-10-03 2003-04-03 Scaggs Michael J. Method and apparatus for assisting laser material processing
US20030127435A1 (en) * 2000-08-31 2003-07-10 Sharp Laboratories Of America, Inc. Laser annealing apparatus to control the amount of oxygen incorporated into polycrystalline silicon films
US20070281247A1 (en) * 2006-05-30 2007-12-06 Phillips Scott E Laser ablation resist

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5868847A (en) 1994-12-16 1999-02-09 Applied Materials, Inc. Clamp ring for shielding a substrate during film layer deposition
US5607789A (en) 1995-01-23 1997-03-04 Duracell Inc. Light transparent multilayer moisture barrier for electrochemical cell tester and cell employing same
US20040224501A1 (en) 1996-05-22 2004-11-11 Yung-Tsun Lo Manufacturing method for making tungsten-plug in an intergrated circuit device without volcano phenomena
US5922133A (en) 1997-09-12 1999-07-13 Applied Materials, Inc. Multiple edge deposition exclusion rings
US6120607A (en) 1998-12-03 2000-09-19 Lsi Logic Corporation Apparatus and method for blocking the deposition of oxide on a wafer
US6168884B1 (en) * 1999-04-02 2001-01-02 Lockheed Martin Energy Research Corporation Battery with an in-situ activation plated lithium anode
CN1211862C (zh) 1999-04-07 2005-07-20 壳牌太阳能股份有限公司 衬底薄膜烧蚀方法及其设备
WO2001073873A1 (en) 2000-03-28 2001-10-04 Johnson Research & Development Company, Inc. Method of making a thin film battery with a metallic lithium anode
JPWO2002065573A1 (ja) 2001-02-15 2004-06-17 松下電器産業株式会社 固体電解質電池およびその製造方法
KR100416094B1 (ko) * 2001-08-28 2004-01-24 삼성에스디아이 주식회사 리튬 2차 전지용 음극 박막 및 그 제조 방법
US7204862B1 (en) * 2002-01-10 2007-04-17 Excellatron Solid State, Llc Packaged thin film batteries and methods of packaging thin film batteries
US6916679B2 (en) 2002-08-09 2005-07-12 Infinite Power Solutions, Inc. Methods of and device for encapsulation and termination of electronic devices
US6994933B1 (en) 2002-09-16 2006-02-07 Oak Ridge Micro-Energy, Inc. Long life thin film battery and method therefor
JP2004127743A (ja) * 2002-10-03 2004-04-22 Matsushita Electric Ind Co Ltd 薄膜電池
US20040096745A1 (en) 2002-11-12 2004-05-20 Matsushita Electric Industrial Co., Ltd. Lithium ion conductor and all-solid lithium ion rechargeable battery
FR2862436B1 (fr) 2003-11-14 2006-02-10 Commissariat Energie Atomique Micro-batterie au lithium munie d'une enveloppe de protection et procede de fabrication d'une telle micro-batterie
US7298017B1 (en) 2004-08-28 2007-11-20 Hrl Laboratories, Llc Actuation using lithium/metal alloys and actuator device
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
US8679674B2 (en) 2005-03-25 2014-03-25 Front Edge Technology, Inc. Battery with protective packaging
US7524577B2 (en) 2005-09-06 2009-04-28 Oak Ridge Micro-Energy, Inc. Long life thin film battery and method therefor
US7553582B2 (en) 2005-09-06 2009-06-30 Oak Ridge Micro-Energy, Inc. Getters for thin film battery hermetic package
US7790237B2 (en) 2006-02-21 2010-09-07 Cbrite Inc. Multilayer films for package applications and method for making same
US7936447B2 (en) 2006-05-08 2011-05-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101379243B1 (ko) 2006-07-18 2014-03-28 사임베트 코퍼레이션 고체상태 마이크로 배터리의 포토리소그래픽 제조, 싱글레이션 및 패시베이션 방법 및 장치
US7862927B2 (en) 2007-03-02 2011-01-04 Front Edge Technology Thin film battery and manufacturing method
JP5211526B2 (ja) 2007-03-29 2013-06-12 Ｔｄｋ株式会社 全固体リチウムイオン二次電池及びその製造方法
CN105789654A (zh) 2007-10-25 2016-07-20 应用材料公司 大量制造薄膜电池的方法
WO2009089417A1 (en) 2008-01-11 2009-07-16 Infinite Power Solutions, Inc. Thin film encapsulation for thin film batteries and other devices
JP4700714B2 (ja) 2008-06-04 2011-06-15 キヤノンアネルバ株式会社 マスク、該マスクを用いた成膜装置、及び、該マスクを用いた成膜方法
JP5356741B2 (ja) 2008-07-09 2013-12-04 三菱電機株式会社 レーザ加工装置
TW201034228A (en) 2008-12-05 2010-09-16 Solopower Inc Method and apparatus for forming contact layers for continuous workpieces
US8524139B2 (en) 2009-08-10 2013-09-03 FEI Compay Gas-assisted laser ablation
US20110045351A1 (en) 2009-08-23 2011-02-24 Ramot At Tel-Aviv University Ltd. High-Power Nanoscale Cathodes for Thin-Film Microbatteries
US8580332B2 (en) * 2009-09-22 2013-11-12 Applied Materials, Inc. Thin-film battery methods for complexity reduction
EP2306579A1 (fr) 2009-09-28 2011-04-06 STMicroelectronics (Tours) SAS Procédé de formation d'une batterie lithium-ion en couches minces
US20140363610A1 (en) 2009-10-14 2014-12-11 Daniel Elliot Sameoto Compression, extrusion and injection molding of interlocking dry adhesive microstructures with flexible mold technology
FR2951876B1 (fr) 2009-10-26 2012-02-03 Commissariat Energie Atomique Micro-batterie au lithium munie d'une couche d'encapsulation conductrice electroniquement
JP5515665B2 (ja) 2009-11-18 2014-06-11 ソニー株式会社 固体電解質電池、正極活物質および電池
JP2013512547A (ja) * 2009-11-30 2013-04-11 オーツェー エリコン バルザーズ アーゲー リチウムイオン電池およびリチウムイオン電池の製造方法
KR20120013665A (ko) 2010-08-06 2012-02-15 주성엔지니어링(주) 레이저 가공 분진 제거 장치, 레이저 스크라이빙 장치 및 방법
KR20140041758A (ko) 2011-06-17 2014-04-04 어플라이드 머티어리얼스, 인코포레이티드 박막 배터리들의 마스크-리스 제조
US20120321815A1 (en) 2011-06-17 2012-12-20 Applied Materials, Inc. Thin Film Battery Fabrication With Mask-Less Electrolyte Deposition
CN106947948A (zh) 2011-06-17 2017-07-14 应用材料公司 无针孔介电薄膜制造
JP5623360B2 (ja) * 2011-09-13 2014-11-12 トヨタ自動車株式会社 全固体電池
US8785034B2 (en) 2011-11-21 2014-07-22 Infineon Technologies Austria Ag Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an integrated circuit
KR20130114921A (ko) 2012-04-10 2013-10-21 삼성에스디아이 주식회사 연료 전지용 전극, 이의 제조 방법, 및 이를 포함하는 연료 전지용 막-전극 어셈블리 및 연료 전지 시스템
JP5987439B2 (ja) 2012-04-19 2016-09-07 日立化成株式会社 リチウムイオン二次電池用負極活物質及びリチウムイオン二次電池
FR2994338A1 (fr) 2012-08-03 2014-02-07 St Microelectronics Tours Sas Procede de formation d'une batterie de type lithium-ion
CN104871361B (zh) * 2012-12-19 2018-04-13 应用材料公司 垂直薄膜电池的无掩模制造
US10141600B2 (en) 2013-03-15 2018-11-27 Apple Inc. Thin film pattern layer battery systems
US9887403B2 (en) * 2013-03-15 2018-02-06 Apple Inc. Thin film encapsulation battery systems
SG11201508014WA (en) 2013-05-02 2015-10-29 Tera Barrier Films Pte Ltd Encapsulation barrier stack comprising dendrimer encapsulated nanop articles
KR101346317B1 (ko) 2013-07-09 2013-12-31 에스아이에스 주식회사 맞춤 재단 용접 판재의 용접을 위해 Ａｌ-Ｓｉ도금층을 제거하기 위한 레이저 삭마 장치
US9781842B2 (en) 2013-08-05 2017-10-03 California Institute Of Technology Long-term packaging for the protection of implant electronics
TW201529873A (zh) 2014-01-24 2015-08-01 Applied Materials Inc 電化學元件中之電極層上的固態電解質之沉積
WO2015196052A1 (en) 2014-06-19 2015-12-23 Massachusetts Institute Of Technology Lubricant-impregnated surfaces for electrochemical applications, and devices and systems using same
CN104134816A (zh) 2014-08-05 2014-11-05 厦门大学 一种采用倒金字塔阵列结构的三维全固态微型薄膜锂电池
US9793522B2 (en) 2014-08-13 2017-10-17 Verily Life Sciences Llc Sealed solid state battery
TW201622228A (zh) 2014-08-27 2016-06-16 應用材料股份有限公司 三維薄膜電池
TW201628249A (zh) 2014-08-28 2016-08-01 應用材料股份有限公司 包含用於降低界面電阻及過電位的中間層的電化學裝置堆疊
EP3189555A4 (en) 2014-09-04 2018-04-18 Applied Materials, Inc. Laser patterned thin film battery
US10573856B2 (en) 2015-05-14 2020-02-25 GM Global Technology Operations LLC Barrier layer coatings for battery pouch cell seal

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266769A (en) * 1992-02-25 1993-11-30 International Business Machines Corporation Process for independent control of crown and camber for magnetic head slider
US5359176A (en) * 1993-04-02 1994-10-25 International Business Machines Corporation Optics and environmental protection device for laser processing applications
US20030012734A1 (en) * 1996-09-23 2003-01-16 Incept Llc. Biocompatible crosslinked polymers
US20030127435A1 (en) * 2000-08-31 2003-07-10 Sharp Laboratories Of America, Inc. Laser annealing apparatus to control the amount of oxygen incorporated into polycrystalline silicon films
US20030062126A1 (en) * 2001-10-03 2003-04-03 Scaggs Michael J. Method and apparatus for assisting laser material processing
US20070281247A1 (en) * 2006-05-30 2007-12-06 Phillips Scott E Laser ablation resist

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10315273B2 (en) * 2015-08-11 2019-06-11 Disco Corporation Laser processing apparatus
US10950912B2 (en) 2017-06-14 2021-03-16 Milwaukee Electric Tool Corporation Arrangements for inhibiting intrusion into battery pack electrical components
US11031651B2 (en) 2017-06-14 2021-06-08 Milwaukee Electric Tool Corporation Arrangements for inhibiting intrusion into battery pack electrical components
US11777151B2 (en) 2017-06-14 2023-10-03 Milwaukee Electric Tool Corporation Arrangements for inhibiting intrusion into battery pack electrical components
US11916203B2 (en) 2017-06-14 2024-02-27 Milwaukee Electric Tool Corporation Arrangements for inhibiting intrusion into battery pack electrical components
US11923514B2 (en) 2017-06-14 2024-03-05 Milwaukee Electric Tool Corporation Arrangements for inhibiting intrusion into battery pack electrical components
JP2025518928A (ja) * 2022-06-14 2025-06-19 エルジー エナジー ソリューション リミテッド レーザエッチング装置、レーザエッチングシステム、レーザを用いてエッチングされた電極、およびその電極の製造方法
EP4523836A4 (en) * 2022-06-14 2025-09-10 Lg Energy Solution Ltd LASER ENGRAVING DEVICE, LASER ENGRAVING SYSTEM, ELECTRODE ENGRAVED USING A LASER, AND METHOD FOR MANUFACTURING SUCH AN ELECTRODE

Also Published As

Publication number Publication date
WO2017180945A1 (en) 2017-10-19
TWI796295B (zh) 2023-03-21
WO2017180943A1 (en) 2017-10-19
WO2017180975A3 (en) 2018-07-26
TW201810766A (zh) 2018-03-16
TW201803189A (zh) 2018-01-16
US20170301893A1 (en) 2017-10-19
WO2017180947A1 (en) 2017-10-19
TW201810769A (zh) 2018-03-16
US20170301955A1 (en) 2017-10-19
TW201807861A (zh) 2018-03-01
US20170301897A1 (en) 2017-10-19
US10547040B2 (en) 2020-01-28
WO2017180959A3 (en) 2018-07-26
WO2017180955A2 (en) 2017-10-19
TW201810767A (zh) 2018-03-16
WO2017180975A2 (en) 2017-10-19
US20170301895A1 (en) 2017-10-19
WO2017180962A3 (en) 2018-07-26
US20170301892A1 (en) 2017-10-19
US20170301954A1 (en) 2017-10-19
TW201803191A (zh) 2018-01-16
TW201737530A (zh) 2017-10-16
US20170301894A1 (en) 2017-10-19
WO2017180973A1 (en) 2017-10-19
TW201803184A (zh) 2018-01-16
TW201806766A (zh) 2018-03-01
TW201803193A (zh) 2018-01-16
WO2017180942A1 (en) 2017-10-19
WO2017180941A1 (en) 2017-10-19
WO2017180955A3 (en) 2018-07-26
TW201810768A (zh) 2018-03-16
WO2017180967A2 (en) 2017-10-19
WO2017180959A2 (en) 2017-10-19
US20170301956A1 (en) 2017-10-19
WO2017180967A3 (en) 2018-07-26
US20170301926A1 (en) 2017-10-19
US20170301957A1 (en) 2017-10-19
WO2017180962A2 (en) 2017-10-19

Similar Documents

Publication Publication Date Title
US20170301928A1 (en) Device and method for maskless thin film etching
KR101942961B1 (ko) 핀홀 없는 유전체 박막 제조
TWI618278B (zh) 垂直薄膜電池之無遮罩製造
JP6283433B2 (ja) 薄膜電池のマスクレス製造
JP6049708B2 (ja) マスクレス電解質堆積による薄膜バッテリ製造
KR101718395B1 (ko) 박막 배터리를 제조하기 위한 방법들 및 팩토리들
JPH07335552A (ja) 処理装置
TW201622224A (zh) 雷射圖案化薄膜電池
JP5975605B2 (ja) 薄膜電池の製造方法および薄膜電池
JP2014516202A (ja) 薄膜電池製造の方法および薄膜電池製造用のハイブリッド工場
JP2018517843A (ja) 方法及びコーティング設備
JP2009158416A (ja) 固体電解質薄膜の製造方法、平行平板型マグネトロンスパッタ装置、及び薄膜固体リチウムイオン２次電池の製造方法
KR101069257B1 (ko) 섀도우 마스크의 사용을 최소화한 박막전지의 제조방법
US9373864B2 (en) Lithium microbattery fabrication method
US10109887B1 (en) 3D-structured solid state battery
US20070077368A1 (en) Ion beam method for removing an organic light emitting material
JP7749466B2 (ja) イオンミリング源、真空処理装置、及び真空処理方法
KR20130013990A (ko) 레이저를 이용하여 박막의 엣지를 가공하는 박막 전지의 제조 방법
CN214797504U (zh) 固态薄膜电池制造设备
US11049537B2 (en) Additive patterning of semiconductor film stacks
CN118712219B (zh) 功率半导体器件、其制备方法及应用
KR20210147401A (ko) 오염물의 건식 제거 방법
JPS63100746A (ja) Ｉｃ素子における配線接続方法及びその装置
CN106575797A (zh) 用于增加LiPON离子电导率以及TFB制造产率的专用LiPON掩模
CN114481042A (zh) 一种电子束蒸发台坩埚组件的清理方法

Legal Events

Date Code Title Description
AS Assignment

Owner name: APPLIED MATERIALS, INC., CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YOUNG, MICHAEL YU-TAK;FRANKLIN, JEFFREY L.;REEL/FRAME:040399/0047

Effective date: 20161110

STPP Information on status: patent application and granting procedure in general

Free format text: NON FINAL ACTION MAILED

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION

AS Assignment

Owner name: ELEVATED MATERIALS US LLC, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:APPLIED MATERIALS, INC.;REEL/FRAME:071036/0188

Effective date: 20250212

Owner name: ELEVATED MATERIALS US LLC, CALIFORNIA

Free format text: ASSIGNMENT OF ASSIGNOR'S INTEREST;ASSIGNOR:APPLIED MATERIALS, INC.;REEL/FRAME:071036/0188

Effective date: 20250212