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US20170194263A1 - Composite device - Google Patents

Composite device Download PDF

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Publication number
US20170194263A1
US20170194263A1 US15/464,393 US201715464393A US2017194263A1 US 20170194263 A1 US20170194263 A1 US 20170194263A1 US 201715464393 A US201715464393 A US 201715464393A US 2017194263 A1 US2017194263 A1 US 2017194263A1
Authority
US
United States
Prior art keywords
thermoplastic resin
resin layer
composite device
substrate
mounted component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US15/464,393
Other versions
US9960122B2 (en
Inventor
Noboru Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Assigned to MURATA MANUFACTURING CO., LTD. reassignment MURATA MANUFACTURING CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KATO, NOBORU
Publication of US20170194263A1 publication Critical patent/US20170194263A1/en
Application granted granted Critical
Publication of US9960122B2 publication Critical patent/US9960122B2/en
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    • H10W70/614—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • G06K19/0775—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card arrangements for connecting the integrated circuit to the antenna
    • G06K19/07756—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card arrangements for connecting the integrated circuit to the antenna the connection being non-galvanic, e.g. capacitive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/145—Organic substrates, e.g. plastic
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385—Assembly of a plurality of insulating substrates
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386—Geometry or layout of the interconnection structure
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    • H01L23/5387—Flexible insulating substrates
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0652—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2208—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
    • H01Q1/2225—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/40—Radiating elements coated with or embedded in protective material
    • H01Q1/405—Radome integrated radiating elements
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    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4632—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating thermoplastic or uncured resin sheets comprising printed circuits without added adhesive materials between the sheets
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    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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    • H01L2224/165—Material
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    • H01L2224/16503—Material at the bonding interface comprising an intermetallic compound
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/191—Disposition
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    • H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H—ELECTRICITY
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    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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Definitions

  • the present invention relates to a composite device including a mounted component such as a chip component and a semiconductor module component, and a substrate in which the mounted component is mounted.
  • a conductive bonding material is usually used.
  • a terminal electrode of the mounted component is electrically and mechanically bonded to a land of the substrate with solder.
  • a soldering part based on the conductive bonding material is superior in heat-resistant strength, and thus the soldering part is not re-melted in a reflow soldering step, enabling highly reliable mounting.
  • Preferred embodiments of the present invention provide a composite device with a mounted component and a substrate in which the mounted component is mounted.
  • the composite device is also adaptive to mounted components that are further miniaturized.
  • a composite device includes a substrate and a mounted component mounted to a surface of the substrate.
  • the substrate includes a first thermoplastic resin layer
  • at least a surface of the mounted component includes a second thermoplastic resin layer that includes a same or a similar material as that of the first thermoplastic resin layer, and is located between the second thermoplastic resin layer and the first thermoplastic resin layer, a conductive bonded portion including a conductive bonding material is provided, and a bonding layer that bonds the second thermoplastic resin layer and the first thermoplastic resin layer together is provided.
  • the mounted component is mechanically (structurally) bonded to the substrate through the bonding layer. Therefore, even when the mounted component is small, stability of electrical bonding between a terminal of the mounted component and a land on the substrate side is ensured and significantly improved.
  • At least one of the first thermoplastic resin layer and the second thermoplastic resin layer is flexible.
  • the adhesiveness between the bonded surfaces is high, and the bonding layer is easily provided.
  • the mounted component is a component in which an IC chip is on a surface of a base material including the second thermoplastic resin layer.
  • a process of manufacturing a mounted component (semiconductor package) including a thermoplastic resin layer is able to be simplified.
  • a mounted component includes, around the IC chip, a protective layer comprising a third thermoplastic resin layer that includes a same or a similar material as that of the second thermoplastic resin layer.
  • a mounted component semiconductor package
  • the upper and lower surfaces of which each includes a thermoplastic resin layer is able to be easily provided.
  • the mounted component may include, around the IC chip, a protective layer comprising a thermosetting resin layer.
  • a mounted component is a component (semiconductor package) in which a base material including the second thermoplastic resin layer includes a built-in IC chip.
  • the mounted component is thin, and includes a thermoplastic resin layer around the IC chip, and therefore a thin composite device is able to be provided.
  • the mounted component is a component in which the second thermoplastic resin layer is affixed to a portion of the IC chip.
  • a process for manufacturing a mounted component (semiconductor package) including a thermoplastic resin layer is able to be simplified.
  • a substrate includes a structure in which a plurality of thermoplastic resin layers including the first thermoplastic resin layer are laminated.
  • a circuit in the substrate, together with a mounted component, is able to easily provide a composite device with higher functionality.
  • the substrate is a collective substrate including a plurality of child board regions
  • the mounted component is an RFIC package on a portion of a conductive pattern at an edge of the collective substrate.
  • all bonding regions other than the conductive bonded portion define the bonding layer.
  • the conductive bonded portion is embedded into the substrate.
  • a mounted component is mechanically (structurally) bonded to a substrate through a bonding layer. Therefore, even when the mounted component is small, the stability of electrical bonding between a terminal of the mounted component and a land on the substrate side is ensured.
  • FIG. 1A is a perspective view of a composite device according to a first preferred embodiment of the present invention.
  • FIG. 1B is a partially enlarged perspective view of the composite device shown in FIG. 1A .
  • FIG. 2 is a cross-sectional view of a mounted component according to a preferred embodiment of the present invention.
  • FIG. 3 is a circuit diagram showing the mounted component shown in FIG. 2 .
  • FIGS. 4A and 4B are cross-sectional views showing a main portion of the composite device shown in FIG. 1 .
  • FIG. 5 is a cross-sectional view showing a bonding layer provided in a bonded portion between a substrate and the mounted component shown in FIG. 2 buried in the substrate.
  • FIGS. 6A and 6B are views showing a structure of the mounted component mounted in a composite device according to a second preferred embodiment of the present invention.
  • FIG. 7 is a cross-sectional view of a main portion of a composite device according to the second preferred embodiment of the present invention.
  • FIG. 8A is a perspective view of a composite device according to a third preferred embodiment of the present invention.
  • FIG. 8B is a partially enlarged perspective view of the composite device shown in FIG. 8A .
  • FIGS. 9A-9C are views showing a structure of mounting a mounted component to a substrate according to a preferred embodiment of the present invention.
  • FIGS. 10A and 10B are views showing a structure of mounting the mounted component to the substrate of a composite device according to a fourth preferred embodiment of the present invention.
  • FIG. 11 is a cross-sectional view of a composite device according to a fifth preferred embodiment of the present invention.
  • FIGS. 12A and 12B are cross-sectional views showing a mounted component 60 including a thermoplastic resin which is provided in a composite device according to a sixth preferred embodiment of the present invention.
  • FIG. 13 is a cross-sectional view of a composite device according to the sixth preferred embodiment of the present invention.
  • FIGS. 14A-14C is a cross-sectional view showing a composite device according to a seventh preferred embodiment of the present invention.
  • FIG. 1A is a perspective view of a composite device 101 according to a first preferred embodiment of the present invention.
  • FIG. 1B is a partially enlarged perspective view of the composite device 101 .
  • the composite device 101 is provided with a substrate and a mounted component 20 that is mounted inside the substrate 10 , and provides a wireless communication device that preferably uses, for example, a UHF band.
  • the substrate 10 is a collective substrate (mother board) including a plurality of child board regions 11 arranged in a lattice shape or other suitable shape.
  • the substrate 10 includes a multilayer structure formed preferably by laminating thermoplastic resin layers (first thermoplastic resin layers), for example, LCP (Liquid Crystal Polymer) and PI (polyimide).
  • An edge surrounding the substrate 10 includes a loop shaped edge conductive pattern 12 .
  • Each thermoplastic resin layer is flexible, and thus the substrate 10 is flexible.
  • the mounted component 20 is mounted under the edge conductive pattern 12 inside the substrate 10 .
  • a portion of the conductive pattern 12 includes a loop portion 12 L.
  • the mounted component 20 is connected to the loop portion 12 L of the conductive pattern 12 .
  • the conductive pattern 12 at the edge defines and functions as a radiator, and the loop portion 12 L performs impedance matching to match the impedance between the mounted component and the conductive pattern 12 .
  • the conductive pattern that is provided at the end portion of the substrate 10 is not limited to a loop shape, but may define, for example, a dipole radiator.
  • FIG. 2 is a cross-sectional view of the mounted component 20 .
  • FIG. 3 is a circuit diagram showing the mounted component 20 .
  • the mounted component 20 is preferably an RFIC package that is formed preferably by packaging an RFIC chip.
  • the mounted component 20 includes a structure in which an IC chip 24 , for example, an RFIC chip, is placed on the surface of a base material 21 .
  • a protective layer 25 is provided around the IC chip 24 .
  • the base material 21 is a laminate of a thermoplastic resin layer (a second thermoplastic resin layer) that includes a same or a similar material as that of the thermoplastic resin layer (the first thermoplastic resin layer) of the substrate 10 .
  • a circuit pattern 22 is provided inside the base material 21 , and each terminal electrode 23 is provided on the lower surface of the base material 21 .
  • the circuit pattern 22 includes an inductor and/or a capacitor based on an in-plane conductor pattern, an interlayer conductor pattern or the like.
  • the circuit pattern 22 includes a resonant circuit with a predetermined resonance frequency, and defines a broad-band matching circuit that is able to provide broad-band impedance matching.
  • the IC chip 24 is mounted on the upper surface of the base material 21 through a conductive bonding material 26 .
  • the IC chip 24 is mounted to the base material 21 by bonding, for example, with Ag nanoparticles.
  • the protective layer 25 is a thermoplastic resin layer (a third thermoplastic resin layer) that includes a same or a similar material as that of the thermoplastic resin layer (the first thermoplastic resin layer) of the substrate 10 .
  • the thermoplastic resin that includes a same or a similar material is a resin in which thermal treatment at a given temperature enables the interface of each thermoplastic resin layer to melt/combine.
  • thermoplastic resin that includes a same or a similar material refers to a thermoplastic resin layer including a same or a similar polymer component as a main component.
  • first thermoplastic resin is LCP
  • second thermoplastic resin is also LCP
  • first thermoplastic resin is PI
  • the second thermoplastic resin is also PI.
  • the melting temperature of each thermoplastic resin layer may differ. It is preferable that when the melting temperature differs, the range preferably is about ⁇ 50° C., for example.
  • the terminal electrode 23 is directly connected, or is electrically connected through a capacitor, to terminal electrodes (two end portions of the loop portion 12 L) of the mother board 10 .
  • the circuit pattern 22 includes a coil pattern
  • the IC chip 24 may be electrically connected through magnetic field coupling between this coil pattern and the loop portion 12 L.
  • the base material 21 includes a thermoplastic resin (the second thermoplastic resin layer) that includes a material that is the same as or similar to that of the thermoplastic resin (the first thermoplastic resin) of the substrate 10
  • the protective layer 25 includes a thermoplastic resin (the third thermoplastic resin layer) that includes a material that is the same as or similar to that of the thermoplastic resin (the first thermoplastic resin) of the substrate 10
  • a thermoplastic resin that includes a material that is the same as or similar to that of the thermoplastic resin of the substrate 10 may be only the base material 21 or only the protective layer 25 .
  • the protective layer 25 may include a thermosetting resin, for example, epoxy, which differs from the material of the thermoplastic resin (the first thermoplastic resin).
  • a matching circuit that includes inductors L 1 , L 2 and capacitors C 1 , C 2 is provided between the IC chip 24 and the terminal electrode 23 .
  • the inductor L 1 is inserted between one terminal of the IC chip 24 and one of the terminal electrodes 23
  • the inductor L 2 is inserted between one terminal and the other terminal of the IC chip 24 .
  • the inductor L 2 is inserted between one terminal and the other terminal of the IC chip 24 through the inductor L 1 .
  • the inductor L 1 and the inductor L 2 are coupled through a magnetic field M.
  • the capacitor C 1 is inserted between one terminal of the IC chip 24 and one of the terminal electrodes 23 .
  • the capacitor C 1 is inserted between one terminal of the IC chip 24 and one of the terminal electrodes 23 through the inductor L 1 .
  • the capacitor C 2 is inserted between the other terminal of the IC chip 24 and the other terminal electrode 23 .
  • the capacitors and inductors described above define a feeder circuit with a plurality of resonance frequencies, which widens the bandwidth.
  • the resonance frequency of the resonant circuit preferably corresponds to a communication frequency of the wireless communication device.
  • FIGS. 4A and 4B are cross-sectional views showing a main portion of the composite device 101 .
  • FIG. 4A is a cross-sectional view showing an arrangement of each of the first thermoplastic resin layers and the mounted component 20 before the lamination of the substrate 10 .
  • FIG. 4B is a cross-sectional view after the lamination of the substrate 10 .
  • the substrate 10 is a structure in which a plurality of thermoplastic resin layers including the first thermoplastic resin layers 10 A, 10 B, 10 C, 10 D, 10 E, 10 F are laminated.
  • the mounted component 20 is included in the substrate 10 .
  • the first thermoplastic resin layers 10 B, 10 C are provided with a cavity 14 .
  • the edge conductive pattern 12 is provided on the upper surface of the first thermoplastic resin layer 10 A, and via conductors 13 are provided inside the first thermoplastic resin layer 10 A.
  • the first thermoplastic resin layers 10 A to 10 F include a material that is the same as or similar to a material as that of the base material 21 of the mounted component 20 and that of the thermoplastic resin layer of the protective layer 25 .
  • the first thermoplastic resin layers 10 A to 10 F are thermo-compressed between adjacent interlayers.
  • the resin layers 10 A, 10 B and the base material 21 of the mounted component 20 are thermo-compressed, and the resin layers 10 C, 10 D and the protective layer 25 of the mounted component 20 are thermo-compressed.
  • the via conductors 13 provide electrical continuity to the terminal electrodes 23 of the mounted component 20 , respectively.
  • the temperature at the time of the thermo-compression bonding is, for example, about 300° C.
  • FIG. 5 is a cross-sectional view showing a bonding layer provided in a bonded portion between the substrate 10 and the mounted component 20 buried in the substrate 10 .
  • a bonding layer 30 is provided between the first thermoplastic resin of the substrate 10 and the second thermoplastic resin layer of the mounted component 20 .
  • the bonding layer 30 is a mixed layer provided between a polymer component of the first thermoplastic resin layer and a polymer component of the second thermoplastic resin layer, and differs in resin (polymer) density from the other portions, that is, portions other than the interface.
  • the substrate 10 is flexible, and therefore when a bonding layer is provided between a bonded surface of the thermoplastic resin layer of the substrate 10 and a bonded surface of the thermoplastic resin layer of the mounted component 20 , the adhesiveness between the bonded surfaces is high, and the bonding layer 30 is able to be easily formed.
  • the via conductors 13 are formed preferably by metalizing a conductive paste.
  • the conductive paste includes, for example, a low-melting-point metal powder (Sn) and an alloy powder (Cu—Ni alloy, Cu—Mn alloy) that is able to form an intermetallic compound with the low-melting-point metal powder at or above the melting temperature of the low-melting-point metal powder. Heating causes the paste to solidify without passing through a molten state.
  • the solidified metal body is an intermetallic compound with a melting point of about 400° C. or more, for example.
  • the terminal electrodes of the mounted component 20 are electrically-connected to the frame-shaped conductive patterns 12 of the substrate 10 through the via conductors 13 , respectively.
  • the end surfaces of the via conductors 13 may be connected to the terminal electrodes 23 , respectively, through a solid solution phase, but may also be connected to the terminal electrodes 23 , respectively, by simple physical contact.
  • the base material 21 and the substrate 10 include the same or similar material, which is a thermosetting resin, the interface therebetween is strongly bonded. Therefore, a metal solid solution phase between the electrode on a side of the substrate 10 and the electrode on a side of the base material 21 may be omitted.
  • the substrate 10 and the mounted component 20 are bonded together even in the case of thermoplastic resin layers, and therefore element assemblies themselves of the substrate 10 and the mounted component 20 are mechanically bonded together. Accordingly, even when the land of the substrate 10 and the terminal electrode of the mounted component 20 are small, the mechanical strength of bonding between the substrate 10 and the mounted component 20 is able to be maintained.
  • the substrate 10 and the mounted component 20 are based on the same or similar thermoplastic resin layers, and therefore a difference in thermal expansion coefficient is small, and consequently, delamination or the like hardly occurs between the substrate 10 and the mounted component 20 .
  • thermoplastic resin layer when an LCP (Liquid Crystal Polymer), which has a small relative permittivity and a high Q value, is included in a thermoplastic resin layer, a high-frequency composite device that handles a high frequency signal is able to be provided.
  • LCP Liquid Crystal Polymer
  • a second preferred embodiment of the present invention shows another example of the mounted component 20 .
  • an IC chip is buried inside a base material in the second preferred embodiment.
  • FIGS. 6A and 6B are views showing a structure of the mounted component 20 mounted in a composite device according to the second preferred embodiment.
  • FIG. 6A is a cross-sectional view showing a state before the mounted component 20 is laminated.
  • FIG. 6B is a cross-sectional view showing a state after the mounted component 20 has been laminated.
  • the mounted component 20 is provided with base materials 21 A, 21 B, 21 C, 21 D, 21 E and an IC chip 24 .
  • the base materials 21 C, 21 D are provided with a cavity, and the IC chip 24 is stored in the cavity.
  • the mounted component 20 is formed preferably by laminating the base materials 21 A, 21 B, 21 C, 21 D, 21 E together with the IC chip 24 . Accordingly, the IC chip 24 is buried inside the base material 21 , and thus the protective layer 25 shown in FIG. 2 may be omitted.
  • FIG. 7 is a cross-sectional view of a main portion of the composite device 102 according to the second preferred embodiment.
  • the bonding layer 30 is provided between the first thermoplastic resin of the substrate and the second thermoplastic resin layer of the mounted component 20 .
  • the bonding layer 30 is a layer in which each thermoplastic resin layers are melted and mixed.
  • FIG. 8A is a perspective view of a composite device 103 according to a third preferred embodiment of the present invention.
  • FIG. 8B is a partially enlarged perspective view of the composite device 103 .
  • the composite device 103 is provided with the substrate 10 and the mounted component 20 .
  • the third preferred embodiment differs from the first preferred embodiment in the structure of mounting the mounted component 20 .
  • the mounted component 20 is mounted on the upper surface of the substrate 10 .
  • FIGS. 9A-9C are views showing a structure of mounting the mounted component 20 to the substrate 10 .
  • FIG. 9A is a cross-sectional view showing a state immediately before the mounted component 20 is mounted to the substrate 10 .
  • FIG. 9B is a cross-sectional view showing a state during the mounting of the mounted component 20 to the substrate 10 .
  • FIG. 9C is a cross-sectional view showing a state after the mounted component 20 has been mounted to the substrate 10 .
  • the base material of the mounted component 20 for example, an RFIC package, is thermoplastic resin, for example, LCP, PI, and the like.
  • a conductive bonding material 31 (conductive bonding material paste) is printed on the land of the substrate 10 .
  • the paste includes, for example, low-melting-point metal powder (Sn) and alloy powder (Cu—Ni alloy, Cu—Mn alloy) that is able to form an intermetallic compound with the low-melting-point metal powder at or above the melting temperature of this low-melting-point metal powder. Heating causes the paste to solidify without passing through a molten state.
  • the paste is subjected to thermal treatment, thus solidifying the conductive bonding material 31 , as shown in FIG. 9B .
  • the melting temperature of the low-melting-point metal powder for example, about 230° C. or more
  • Sn and Cu—Ni or Cu—Mn
  • the intermetallic compound has a higher melting temperature, for example, about 400° C. or more.
  • the mounted component 20 is subjected to thermal treatment while pressure is applied to the mounted component 20 from the upper side.
  • This causes the thermoplastic resin to soften and flow, and consequently the solidified conductive bonding material 31 digs or enters into a side of the substrate 10 .
  • the solidified conductive bonding material 31 digs into the side of the substrate 10 due to the conductor density on the side of the substrate 10 being low.
  • Many conductive patterns may be laminated in the base material 21 of the mounted component 20 , and therefore the rigidity of the base material 21 is relatively high, and consequently the solidified conductive bonding material 31 does not dig into the base material 21 side.
  • the thermoplastic resin layer on the mounted component 20 side and the thermoplastic resin layer on the side of the substrate 10 start melting at the interface therebetween. As the result, the bonding layer 30 is provided in the interface portion.
  • the land of the substrate 10 may be subjected to ultrasonic bonding while the land of the substrate 10 is heated.
  • FIGS. 10A and 10B are views showing a structure of mounting the mounted component 20 to the substrate 10 of a composite device 104 according to a fourth preferred embodiment of the present invention.
  • FIG. 10A is a cross-sectional view showing a state immediately before the mounted component 20 is mounted to the substrate 10 .
  • FIG. 10B is a cross-sectional view showing a state after the mounted component 20 has been mounted to the substrate 10 .
  • the mounted component 20 and the substrate 10 include features similar to the third preferred embodiment.
  • a thermoplastic resin layer 27 is provided or affixed on the lower surface of the base material 21 of the mounted component 20 .
  • the thermoplastic resin layer 27 is preferably a thermoplastic resin sheet, but is not limited thereto.
  • the thermoplastic resin layer 27 may be formed by applying, for example, a pasty thermoplastic resin on the lower surface of the base material 21 .
  • the conductive bonding material (conductive bonding material paste) is printed on the land of the substrate 10 .
  • the paste is subjected to thermal treatment, thus solidifying the conductive bonding material 31 as shown in FIG. 10B .
  • the melting temperature of the low-melting-point metal powder for example, about 230° C. or more
  • Sn and Cu—Ni alloy or Cu—Mn alloy
  • the thermoplastic resin layer 27 and the thermoplastic resin layer on a side of the substrate 10 start melting at the interface therebetween.
  • the bonding layer 30 is formed in the interface portion.
  • the base material 21 of the mounted component 20 is not a thermoplastic resin
  • the base material 21 is bonded through the bonding layer that bonds thermoplastic resin layers together.
  • a fifth preferred embodiment of the present invention shows an example in which a composite device is a module component.
  • FIG. 11 is a cross-sectional view of a composite device 105 according to a fifth preferred embodiment.
  • the composite device 105 may be, for example, a high-frequency module, a power supply module, or the like.
  • a module substrate is a laminate including a plurality of thermoplastic resin layers, for example, LCP, PI, and the like.
  • Mounted components 20 A, 20 B are mounted inside the module substrate 50 .
  • the mounted components 20 A, 20 B are similar to the mounted component 20 shown in the second preferred embodiment, as shown in FIG. 6B .
  • the bonding layers 30 are formed on the upper and lower surfaces of the mounted components 20 A, 20 B.
  • the module substrate 50 and each of the mounted components 20 A, 20 B are flexible, for example.
  • any of the module substrate 50 and the mounted components 20 A, 20 B may be flexible.
  • the adhesiveness between the bonded surfaces is high, and the bonding layers 30 are able to be easily formed.
  • a surface mount component 41 that is mounted on the upper surface of the module substrate 50 is a semiconductor package, for example, an RFIC package.
  • the outer surface of the surface mount component 41 preferably is formed of thermoplastic resin, for example, epoxy.
  • the surface mount component 42 of a passive component for example, a ceramic capacitor is mounted on the upper surface of the module substrate 50 .
  • a terminal electrode 54 is formed on a mounting surface of the module substrate 50 , that is, on the lower surface of the module substrate 50 in the direction shown in FIG. 11 .
  • the composite device 104 is provided by connecting the terminal electrode 54 to the land of the mother board.
  • FIGS. 12A and 12B are cross-sectional views showing a mounted component 60 including a thermoplastic resin which is provided in a composite device according to a sixth preferred embodiment of the present invention.
  • FIG. 12A is a cross-sectional view showing a state during manufacturing of the mounted component 60 .
  • FIG. 12B is a cross-sectional view of the mounted component 60 including a thermoplastic resin after manufacturing is completed.
  • An IC chip 61 is, for example, an IC chip with a CSP (Chip Size Package) structure.
  • a thermoplastic resin layer 63 is affixed on the circuit formation surface side of the IC chip 61 by an adhesive with a heat resistance of, for example, about 300° C. or more. Alternatively, the thermoplastic resin layer 63 may be provided or affixed directly on the circuit formation surface side of the IC chip 61 by subjecting the surface on the circuit formation surface side of the IC chip 61 to surface roughening treatment.
  • FIG. 13 is a cross-sectional view of a composite device 106 according to the sixth preferred embodiment.
  • the module substrate 50 is a laminate including a plurality of thermoplastic resin layers, for example, LCP, PI, and the like.
  • the mounted component 60 including a thermoplastic resin is mounted inside the module substrate 50 .
  • the bonding layer 30 is formed in a bonded portion between the thermoplastic resin layer 63 of the mounted component 60 including the thermoplastic resin and the thermoplastic resin layer of the module substrate 50 .
  • the terminal electrode 54 is formed on the mounting surface of the module substrate 50 , that is, on the lower surface of the module substrate 50 in the direction shown in FIG. 13 .
  • the composite device 105 is provided by connecting the terminal electrode 54 to the land of the mother board.
  • a seventh preferred embodiment of the present invention shows an example in which a bonded surface of a surface mount component and a bonded surface of a module substrate are bonded together through a bonding layer of a thermoplastic resin layer.
  • FIGS. 14A-14C are cross-sectional views showing a composite device 107 according to the seventh preferred embodiment.
  • FIGS. 14A and 14B are cross-sectional views each showing a state during manufacturing of the composite device 107 .
  • FIG. 14C is a cross-sectional view of the composite device 106 after manufacturing is completed.
  • the mounted component 20 is mounted in the module substrate 50 in the same or a similar arrangement as the fourth preferred embodiment described above.
  • thermoplastic resin layer 51 is affixed to the upper surface of the module substrate 50 .
  • This thermoplastic resin layer 51 is the same as or similar to the thermoplastic resin layer defining the substrate 50 .
  • the thermoplastic resin layer 51 is a polymer with a comparatively low melting point, preferably lower than that of the thermoplastic resin layer defining the substrate 50 , for example, and the thickness of the thermoplastic resin layer 51 is, for example, about 20 ⁇ m to about 30 ⁇ m.
  • the thermoplastic resin layer 51 includes openings 52 at positions at which the conductive bonding materials 53 are to be included.
  • the conductive bonding materials 53 are provided in the openings 52 .
  • the conductive bonding materials 53 preferably include features similar to the conductive bonding material 31 described above with respect to the third and fourth preferred embodiments.
  • surface mount components 70 , 42 are mounted and heated. This causes the conductive bonding materials 53 to solidify.
  • the conductive bonding materials 53 to or above the melting temperature of the low-melting-point metal powder (for example, about 230° C. or more)
  • Sn and Cu—Ni alloy (or Cu—Mn alloy) are reacted with each other to form the intermetallic compound.
  • the bonding layer 30 is formed in a bonded portion between the lower surface of each of the surface mount components 70 , 42 and the thermoplastic resin layer 51 .
  • preferred embodiments of the present invention are able to also be applied to a configuration in which the bonded surface of the surface mount component and the bonded surface of the substrate are bonded together through the bonding layer of the thermoplastic resin layer.

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  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
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Abstract

A composite device includes a substrate and a mounted component mounted on a surface of, or inside, the substrate. The substrate includes a first thermoplastic resin layer. A surface of the mounted component includes a second thermoplastic resin layer that includes a same or a similar material as that of the first thermoplastic resin layer. A bonding layer that bonds the second thermoplastic resin layer and the first thermoplastic resin layer together is provided between the second thermoplastic resin layer and the first thermoplastic resin layer.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This application claims the benefit of priority to Japanese Patent Application No. 2014-211502 filed on Oct. 16, 2014 and is a Continuation Application of PCT Application No. PCT/JP2015/078717 filed on Oct. 9, 2015. The entire contents of each application are hereby incorporated herein by reference.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a composite device including a mounted component such as a chip component and a semiconductor module component, and a substrate in which the mounted component is mounted.
  • 2. Description of the Related Art
  • When a mounted component such as a chip component and a semiconductor module component is mounted in a substrate such as a printed-circuit board, a conductive bonding material is usually used. In general, a terminal electrode of the mounted component is electrically and mechanically bonded to a land of the substrate with solder.
  • As the conductive bonding material, International Publication No. 2013/132942 discloses a Sn-Cu-Ni alloy-based material. When this conductive bonding material is used, heating at a level of 300° C. accelerates a change into an intermetallic compound having a high melting point of 400° C. or more, and consequently a low-melting point component does not remain. Therefore, for example, in a semiconductor device manufacturing process, after a semiconductor device is manufactured through a soldering step, even when the semiconductor device is mounted in a substrate by a reflow soldering method, a soldering part based on the conductive bonding material is superior in heat-resistant strength, and thus the soldering part is not re-melted in a reflow soldering step, enabling highly reliable mounting.
  • In recent years, mounted components are more and more miniaturized, and as a result, the size of the land on the substrate is also miniaturized to allow mounted components to be mounted thereon. Therefore, in a structure of mounting with solder, it is getting more difficult to sufficiently maintain the mechanical strength of mounted portions.
    • SUMMARY OF THE INVENTION
  • Preferred embodiments of the present invention provide a composite device with a mounted component and a substrate in which the mounted component is mounted. The composite device is also adaptive to mounted components that are further miniaturized.
  • A composite device according to a preferred embodiment the present invention includes a substrate and a mounted component mounted to a surface of the substrate. The substrate includes a first thermoplastic resin layer, at least a surface of the mounted component includes a second thermoplastic resin layer that includes a same or a similar material as that of the first thermoplastic resin layer, and is located between the second thermoplastic resin layer and the first thermoplastic resin layer, a conductive bonded portion including a conductive bonding material is provided, and a bonding layer that bonds the second thermoplastic resin layer and the first thermoplastic resin layer together is provided.
  • According to the features described above, the mounted component is mechanically (structurally) bonded to the substrate through the bonding layer. Therefore, even when the mounted component is small, stability of electrical bonding between a terminal of the mounted component and a land on the substrate side is ensured and significantly improved.
  • According to a preferred embodiment of the present invention, at least one of the first thermoplastic resin layer and the second thermoplastic resin layer is flexible. As a result, when a bonding layer is provided between a bonded surface of the second thermoplastic resin layer and a bonded surface of the first thermoplastic resin layer, the adhesiveness between the bonded surfaces is high, and the bonding layer is easily provided.
  • According to a preferred embodiment of the present invention, the mounted component is a component in which an IC chip is on a surface of a base material including the second thermoplastic resin layer. Thus, a process of manufacturing a mounted component (semiconductor package) including a thermoplastic resin layer is able to be simplified.
  • According to a preferred embodiment of the present invention, a mounted component includes, around the IC chip, a protective layer comprising a third thermoplastic resin layer that includes a same or a similar material as that of the second thermoplastic resin layer. Thus, a mounted component (semiconductor package), the upper and lower surfaces of which each includes a thermoplastic resin layer, is able to be easily provided.
  • According to a preferred embodiment of the present invention, the mounted component may include, around the IC chip, a protective layer comprising a thermosetting resin layer.
  • According to a preferred embodiment of the present invention, a mounted component is a component (semiconductor package) in which a base material including the second thermoplastic resin layer includes a built-in IC chip. Thus, the mounted component is thin, and includes a thermoplastic resin layer around the IC chip, and therefore a thin composite device is able to be provided.
  • According to a preferred embodiment of the present invention, the mounted component is a component in which the second thermoplastic resin layer is affixed to a portion of the IC chip. Thus, a process for manufacturing a mounted component (semiconductor package) including a thermoplastic resin layer is able to be simplified.
  • According to a preferred embodiment of the present invention, a substrate includes a structure in which a plurality of thermoplastic resin layers including the first thermoplastic resin layer are laminated. Thus, a circuit in the substrate, together with a mounted component, is able to easily provide a composite device with higher functionality.
  • According to a preferred embodiment of the present invention, the substrate is a collective substrate including a plurality of child board regions, and the mounted component is an RFIC package on a portion of a conductive pattern at an edge of the collective substrate. Thus, RFID management of the collective substrate in the process of manufacturing a composite device in a collective substrate state is able to be provided.
  • According to a preferred embodiment of the present invention, between the second thermoplastic resin layer and the first thermoplastic resin layer, all bonding regions other than the conductive bonded portion define the bonding layer.
  • According to a preferred embodiment of the present invention, the conductive bonded portion is embedded into the substrate.
  • According to preferred embodiments of the present invention, a mounted component is mechanically (structurally) bonded to a substrate through a bonding layer. Therefore, even when the mounted component is small, the stability of electrical bonding between a terminal of the mounted component and a land on the substrate side is ensured.
  • The above and other elements, features, steps, characteristics and advantages of the present invention will become more apparent from the following detailed description of the preferred embodiments with reference to the attached drawings.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1A is a perspective view of a composite device according to a first preferred embodiment of the present invention. FIG. 1B is a partially enlarged perspective view of the composite device shown in FIG. 1A.
  • FIG. 2 is a cross-sectional view of a mounted component according to a preferred embodiment of the present invention.
  • FIG. 3 is a circuit diagram showing the mounted component shown in FIG. 2.
  • FIGS. 4A and 4B are cross-sectional views showing a main portion of the composite device shown in FIG. 1.
  • FIG. 5 is a cross-sectional view showing a bonding layer provided in a bonded portion between a substrate and the mounted component shown in FIG. 2 buried in the substrate.
  • FIGS. 6A and 6B are views showing a structure of the mounted component mounted in a composite device according to a second preferred embodiment of the present invention.
  • FIG. 7 is a cross-sectional view of a main portion of a composite device according to the second preferred embodiment of the present invention.
  • FIG. 8A is a perspective view of a composite device according to a third preferred embodiment of the present invention. FIG. 8B is a partially enlarged perspective view of the composite device shown in FIG. 8A.
  • FIGS. 9A-9C are views showing a structure of mounting a mounted component to a substrate according to a preferred embodiment of the present invention.
  • FIGS. 10A and 10B are views showing a structure of mounting the mounted component to the substrate of a composite device according to a fourth preferred embodiment of the present invention.
  • FIG. 11 is a cross-sectional view of a composite device according to a fifth preferred embodiment of the present invention.
  • FIGS. 12A and 12B are cross-sectional views showing a mounted component 60 including a thermoplastic resin which is provided in a composite device according to a sixth preferred embodiment of the present invention.
  • FIG. 13 is a cross-sectional view of a composite device according to the sixth preferred embodiment of the present invention.
  • FIGS. 14A-14C is a cross-sectional view showing a composite device according to a seventh preferred embodiment of the present invention.
    •  DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • Hereinafter, preferred embodiments of the present invention will be described using some specific examples with reference to accompanying drawings. In the drawings, the same reference numerals are used to denote the same elements. In the second and subsequent preferred embodiments hereinafter described below, descriptions of elements identical to those of the first preferred embodiment are omitted, and elements that differ from those of the first preferred embodiment will be described. In particular, similar effects produced by similar configurations and arrangements will not be mentioned one by one on a preferred embodiment basis.
    • First Preferred Embodiment
  • FIG. 1A is a perspective view of a composite device 101 according to a first preferred embodiment of the present invention. FIG. 1B is a partially enlarged perspective view of the composite device 101.
  • The composite device 101 is provided with a substrate and a mounted component 20 that is mounted inside the substrate 10, and provides a wireless communication device that preferably uses, for example, a UHF band.
  • The substrate 10 is a collective substrate (mother board) including a plurality of child board regions 11 arranged in a lattice shape or other suitable shape. The substrate 10 includes a multilayer structure formed preferably by laminating thermoplastic resin layers (first thermoplastic resin layers), for example, LCP (Liquid Crystal Polymer) and PI (polyimide). An edge surrounding the substrate 10 includes a loop shaped edge conductive pattern 12. Each thermoplastic resin layer is flexible, and thus the substrate 10 is flexible. The mounted component 20 is mounted under the edge conductive pattern 12 inside the substrate 10. A portion of the conductive pattern 12 includes a loop portion 12L.
  • As shown in FIG. 1B, the mounted component 20 is connected to the loop portion 12L of the conductive pattern 12. In other words, two terminals of the mounted component 20 are connected to two end portions of the loop portion 12L, respectively. The conductive pattern 12 at the edge defines and functions as a radiator, and the loop portion 12L performs impedance matching to match the impedance between the mounted component and the conductive pattern 12. The conductive pattern that is provided at the end portion of the substrate 10 is not limited to a loop shape, but may define, for example, a dipole radiator.
  • FIG. 2 is a cross-sectional view of the mounted component 20. FIG. 3 is a circuit diagram showing the mounted component 20. The mounted component 20 is preferably an RFIC package that is formed preferably by packaging an RFIC chip. The mounted component 20 includes a structure in which an IC chip 24, for example, an RFIC chip, is placed on the surface of a base material 21. A protective layer 25 is provided around the IC chip 24.
  • The base material 21 is a laminate of a thermoplastic resin layer (a second thermoplastic resin layer) that includes a same or a similar material as that of the thermoplastic resin layer (the first thermoplastic resin layer) of the substrate 10. A circuit pattern 22 is provided inside the base material 21, and each terminal electrode 23 is provided on the lower surface of the base material 21. The circuit pattern 22 includes an inductor and/or a capacitor based on an in-plane conductor pattern, an interlayer conductor pattern or the like. The circuit pattern 22 includes a resonant circuit with a predetermined resonance frequency, and defines a broad-band matching circuit that is able to provide broad-band impedance matching.
  • The IC chip 24 is mounted on the upper surface of the base material 21 through a conductive bonding material 26. The IC chip 24 is mounted to the base material 21 by bonding, for example, with Ag nanoparticles. The protective layer 25 is a thermoplastic resin layer (a third thermoplastic resin layer) that includes a same or a similar material as that of the thermoplastic resin layer (the first thermoplastic resin layer) of the substrate 10. Here, “the thermoplastic resin that includes a same or a similar material” is a resin in which thermal treatment at a given temperature enables the interface of each thermoplastic resin layer to melt/combine. More specifically, “the thermoplastic resin that includes a same or a similar material” refers to a thermoplastic resin layer including a same or a similar polymer component as a main component. For example, when the first thermoplastic resin is LCP, the second thermoplastic resin is also LCP; and when the first thermoplastic resin is PI, the second thermoplastic resin is also PI. However, the melting temperature of each thermoplastic resin layer may differ. It is preferable that when the melting temperature differs, the range preferably is about ±50° C., for example.
  • The terminal electrode 23 is directly connected, or is electrically connected through a capacitor, to terminal electrodes (two end portions of the loop portion 12L) of the mother board 10. When the circuit pattern 22 includes a coil pattern, the IC chip 24 may be electrically connected through magnetic field coupling between this coil pattern and the loop portion 12L.
  • The base material 21 includes a thermoplastic resin (the second thermoplastic resin layer) that includes a material that is the same as or similar to that of the thermoplastic resin (the first thermoplastic resin) of the substrate 10, and the protective layer 25 includes a thermoplastic resin (the third thermoplastic resin layer) that includes a material that is the same as or similar to that of the thermoplastic resin (the first thermoplastic resin) of the substrate 10. However, a thermoplastic resin that includes a material that is the same as or similar to that of the thermoplastic resin of the substrate 10 may be only the base material 21 or only the protective layer 25. As an example, the protective layer 25 may include a thermosetting resin, for example, epoxy, which differs from the material of the thermoplastic resin (the first thermoplastic resin).
  • As shown in FIG. 3, a matching circuit that includes inductors L1, L2 and capacitors C1, C2 is provided between the IC chip 24 and the terminal electrode 23. The inductor L1 is inserted between one terminal of the IC chip 24 and one of the terminal electrodes 23, and the inductor L2 is inserted between one terminal and the other terminal of the IC chip 24. In the example shown in FIG. 3, the inductor L2 is inserted between one terminal and the other terminal of the IC chip 24 through the inductor L1. The inductor L1 and the inductor L2 are coupled through a magnetic field M. The capacitor C1 is inserted between one terminal of the IC chip 24 and one of the terminal electrodes 23. In the example shown in FIG. 3, the capacitor C1 is inserted between one terminal of the IC chip 24 and one of the terminal electrodes 23 through the inductor L1. The capacitor C2 is inserted between the other terminal of the IC chip 24 and the other terminal electrode 23. The capacitors and inductors described above define a feeder circuit with a plurality of resonance frequencies, which widens the bandwidth. The resonance frequency of the resonant circuit preferably corresponds to a communication frequency of the wireless communication device.
  • FIGS. 4A and 4B are cross-sectional views showing a main portion of the composite device 101. FIG. 4A is a cross-sectional view showing an arrangement of each of the first thermoplastic resin layers and the mounted component 20 before the lamination of the substrate 10. FIG. 4B is a cross-sectional view after the lamination of the substrate 10.
  • The substrate 10 is a structure in which a plurality of thermoplastic resin layers including the first thermoplastic resin layers 10A, 10B, 10C, 10D, 10E, 10F are laminated. The mounted component 20 is included in the substrate 10. The first thermoplastic resin layers 10B, 10C are provided with a cavity 14. The edge conductive pattern 12 is provided on the upper surface of the first thermoplastic resin layer 10A, and via conductors 13 are provided inside the first thermoplastic resin layer 10A.
  • As described above, the first thermoplastic resin layers 10A to 10F include a material that is the same as or similar to a material as that of the base material 21 of the mounted component 20 and that of the thermoplastic resin layer of the protective layer 25.
  • By laminating and then heating and pressing the mounted component 20 together with the first thermoplastic resin layers 10A to 10F, the first thermoplastic resin layers 10A to 10F are thermo-compressed between adjacent interlayers. In addition, the resin layers 10A, 10B and the base material 21 of the mounted component 20 are thermo-compressed, and the resin layers 10C, 10D and the protective layer 25 of the mounted component 20 are thermo-compressed. Moreover, the via conductors 13 provide electrical continuity to the terminal electrodes 23 of the mounted component 20, respectively. The temperature at the time of the thermo-compression bonding is, for example, about 300° C.
  • FIG. 5 is a cross-sectional view showing a bonding layer provided in a bonded portion between the substrate 10 and the mounted component 20 buried in the substrate 10.
  • By thermo-compressing the base material 21 of the mounted component 20 and the protective layer 25, a bonding layer 30 is provided between the first thermoplastic resin of the substrate 10 and the second thermoplastic resin layer of the mounted component 20. The bonding layer 30 is a mixed layer provided between a polymer component of the first thermoplastic resin layer and a polymer component of the second thermoplastic resin layer, and differs in resin (polymer) density from the other portions, that is, portions other than the interface.
  • The substrate 10 is flexible, and therefore when a bonding layer is provided between a bonded surface of the thermoplastic resin layer of the substrate 10 and a bonded surface of the thermoplastic resin layer of the mounted component 20, the adhesiveness between the bonded surfaces is high, and the bonding layer 30 is able to be easily formed.
  • The via conductors 13 are formed preferably by metalizing a conductive paste. The conductive paste includes, for example, a low-melting-point metal powder (Sn) and an alloy powder (Cu—Ni alloy, Cu—Mn alloy) that is able to form an intermetallic compound with the low-melting-point metal powder at or above the melting temperature of the low-melting-point metal powder. Heating causes the paste to solidify without passing through a molten state.
  • The details of the materials are disclosed in International publication No. 2012/066795, International publication No. 2012/086745, International publication No. 2012/108395, and the like.
  • The solidified metal body is an intermetallic compound with a melting point of about 400° C. or more, for example. In other words, the terminal electrodes of the mounted component 20 are electrically-connected to the frame-shaped conductive patterns 12 of the substrate 10 through the via conductors 13, respectively. The end surfaces of the via conductors 13 may be connected to the terminal electrodes 23, respectively, through a solid solution phase, but may also be connected to the terminal electrodes 23, respectively, by simple physical contact. In particular, when the base material 21 and the substrate 10 include the same or similar material, which is a thermosetting resin, the interface therebetween is strongly bonded. Therefore, a metal solid solution phase between the electrode on a side of the substrate 10 and the electrode on a side of the base material 21 may be omitted.
  • According to the first preferred embodiment, the substrate 10 and the mounted component 20 are bonded together even in the case of thermoplastic resin layers, and therefore element assemblies themselves of the substrate 10 and the mounted component 20 are mechanically bonded together. Accordingly, even when the land of the substrate 10 and the terminal electrode of the mounted component 20 are small, the mechanical strength of bonding between the substrate 10 and the mounted component 20 is able to be maintained.
  • Further according to the first preferred embodiment, the substrate 10 and the mounted component 20 are based on the same or similar thermoplastic resin layers, and therefore a difference in thermal expansion coefficient is small, and consequently, delamination or the like hardly occurs between the substrate 10 and the mounted component 20.
  • Also according to the first preferred embodiment, when an LCP (Liquid Crystal Polymer), which has a small relative permittivity and a high Q value, is included in a thermoplastic resin layer, a high-frequency composite device that handles a high frequency signal is able to be provided.
    • Second Preferred Embodiment
  • A second preferred embodiment of the present invention shows another example of the mounted component 20. In contrast to the mounted component shown in FIG. 2 and the like in the first preferred embodiment, an IC chip is buried inside a base material in the second preferred embodiment.
  • FIGS. 6A and 6B are views showing a structure of the mounted component 20 mounted in a composite device according to the second preferred embodiment. FIG. 6A is a cross-sectional view showing a state before the mounted component 20 is laminated. FIG. 6B is a cross-sectional view showing a state after the mounted component 20 has been laminated. The mounted component 20 is provided with base materials 21A, 21B, 21C, 21D, 21E and an IC chip 24. The base materials 21C, 21D are provided with a cavity, and the IC chip 24 is stored in the cavity. The mounted component 20 is formed preferably by laminating the base materials 21A, 21B, 21C, 21D, 21E together with the IC chip 24. Accordingly, the IC chip 24 is buried inside the base material 21, and thus the protective layer 25 shown in FIG. 2 may be omitted.
  • FIG. 7 is a cross-sectional view of a main portion of the composite device 102 according to the second preferred embodiment. By thermo-compressing, the bonding layer 30 is provided between the first thermoplastic resin of the substrate and the second thermoplastic resin layer of the mounted component 20. The bonding layer 30 is a layer in which each thermoplastic resin layers are melted and mixed.
    • Third Preferred Embodiment
  • FIG. 8A is a perspective view of a composite device 103 according to a third preferred embodiment of the present invention. FIG. 8B is a partially enlarged perspective view of the composite device 103.
  • The composite device 103 is provided with the substrate 10 and the mounted component 20. The third preferred embodiment differs from the first preferred embodiment in the structure of mounting the mounted component 20. In the third preferred embodiment, the mounted component 20 is mounted on the upper surface of the substrate 10.
  • FIGS. 9A-9C are views showing a structure of mounting the mounted component 20 to the substrate 10. FIG. 9A is a cross-sectional view showing a state immediately before the mounted component 20 is mounted to the substrate 10. FIG. 9B is a cross-sectional view showing a state during the mounting of the mounted component 20 to the substrate 10. FIG. 9C is a cross-sectional view showing a state after the mounted component 20 has been mounted to the substrate 10.
  • The base material of the mounted component 20, for example, an RFIC package, is thermoplastic resin, for example, LCP, PI, and the like.
  • As shown in FIG. 9A, a conductive bonding material 31 (conductive bonding material paste) is printed on the land of the substrate 10. As described above with respect to the first preferred embodiment, the paste includes, for example, low-melting-point metal powder (Sn) and alloy powder (Cu—Ni alloy, Cu—Mn alloy) that is able to form an intermetallic compound with the low-melting-point metal powder at or above the melting temperature of this low-melting-point metal powder. Heating causes the paste to solidify without passing through a molten state.
  • Subsequently, the paste is subjected to thermal treatment, thus solidifying the conductive bonding material 31, as shown in FIG. 9B. In other words, by heating the paste to or above the melting temperature of the low-melting-point metal powder (for example, about 230° C. or more), Sn and Cu—Ni (or Cu—Mn) are reacted with each other to form the intermetallic compound. The intermetallic compound has a higher melting temperature, for example, about 400° C. or more.
  • Subsequently, as shown in FIG. 9C, the mounted component 20 is subjected to thermal treatment while pressure is applied to the mounted component 20 from the upper side. This causes the thermoplastic resin to soften and flow, and consequently the solidified conductive bonding material 31 digs or enters into a side of the substrate 10. The solidified conductive bonding material 31 digs into the side of the substrate 10 due to the conductor density on the side of the substrate 10 being low. Many conductive patterns may be laminated in the base material 21 of the mounted component 20, and therefore the rigidity of the base material 21 is relatively high, and consequently the solidified conductive bonding material 31 does not dig into the base material 21 side. In addition, in this case, the thermoplastic resin layer on the mounted component 20 side and the thermoplastic resin layer on the side of the substrate 10 start melting at the interface therebetween. As the result, the bonding layer 30 is provided in the interface portion.
  • When the mounted component 20 provided with the terminal electrode 23 including an Au bump is included, the land of the substrate 10 may be subjected to ultrasonic bonding while the land of the substrate 10 is heated.
    • Fourth Preferred Embodiment
  • FIGS. 10A and 10B are views showing a structure of mounting the mounted component 20 to the substrate 10 of a composite device 104 according to a fourth preferred embodiment of the present invention. FIG. 10A is a cross-sectional view showing a state immediately before the mounted component 20 is mounted to the substrate 10. FIG. 10B is a cross-sectional view showing a state after the mounted component 20 has been mounted to the substrate 10.
  • The mounted component 20 and the substrate 10 include features similar to the third preferred embodiment. However, in the fourth preferred embodiment, a thermoplastic resin layer 27 is provided or affixed on the lower surface of the base material 21 of the mounted component 20. The thermoplastic resin layer 27 is preferably a thermoplastic resin sheet, but is not limited thereto. The thermoplastic resin layer 27 may be formed by applying, for example, a pasty thermoplastic resin on the lower surface of the base material 21.
  • As shown in FIG. 10A, the conductive bonding material (conductive bonding material paste) is printed on the land of the substrate 10. Subsequently, the paste is subjected to thermal treatment, thus solidifying the conductive bonding material 31 as shown in FIG. 10B. In other words, by heating the paste to or above the melting temperature of the low-melting-point metal powder (for example, about 230° C. or more), Sn and Cu—Ni alloy (or Cu—Mn alloy) are reacted with each other to form the intermetallic compound. In addition, the thermoplastic resin layer 27 and the thermoplastic resin layer on a side of the substrate 10 start melting at the interface therebetween. As the result, the bonding layer 30 is formed in the interface portion.
  • According to the fourth preferred embodiment, even when the base material 21 of the mounted component 20 is not a thermoplastic resin, the base material 21 is bonded through the bonding layer that bonds thermoplastic resin layers together.
    • Fifth Preferred Embodiment
  • A fifth preferred embodiment of the present invention shows an example in which a composite device is a module component. FIG. 11 is a cross-sectional view of a composite device 105 according to a fifth preferred embodiment. The composite device 105 may be, for example, a high-frequency module, a power supply module, or the like. A module substrate is a laminate including a plurality of thermoplastic resin layers, for example, LCP, PI, and the like.
  • Mounted components 20A, 20B are mounted inside the module substrate 50. The mounted components 20A, 20B are similar to the mounted component 20 shown in the second preferred embodiment, as shown in FIG. 6B. However, according to the fifth preferred embodiment, the bonding layers 30 are formed on the upper and lower surfaces of the mounted components 20A, 20B.
  • Preferably, the module substrate 50 and each of the mounted components 20A, 20B are flexible, for example. However, any of the module substrate 50 and the mounted components 20A, 20B may be flexible. For example, even when the module substrate 50 is rigid while the mounted components 20A, 20B are flexible, when a bonding layer is formed between a bonded surface of each thermoplastic resin layer of the module substrate 50 and a bonded surface of each thermoplastic resin layer of each of the mounted components 20A, 20B, the adhesiveness between the bonded surfaces is high, and the bonding layers 30 are able to be easily formed.
  • A surface mount component 41 that is mounted on the upper surface of the module substrate 50 is a semiconductor package, for example, an RFIC package. However, the outer surface of the surface mount component 41 preferably is formed of thermoplastic resin, for example, epoxy. In addition, for example, the surface mount component 42 of a passive component, for example, a ceramic capacitor is mounted on the upper surface of the module substrate 50.
  • A terminal electrode 54 is formed on a mounting surface of the module substrate 50, that is, on the lower surface of the module substrate 50 in the direction shown in FIG. 11. The composite device 104 is provided by connecting the terminal electrode 54 to the land of the mother board.
    • Sixth Preferred Embodiment
  • FIGS. 12A and 12B are cross-sectional views showing a mounted component 60 including a thermoplastic resin which is provided in a composite device according to a sixth preferred embodiment of the present invention. FIG. 12A is a cross-sectional view showing a state during manufacturing of the mounted component 60. FIG. 12B is a cross-sectional view of the mounted component 60 including a thermoplastic resin after manufacturing is completed. An IC chip 61 is, for example, an IC chip with a CSP (Chip Size Package) structure. A thermoplastic resin layer 63 is affixed on the circuit formation surface side of the IC chip 61 by an adhesive with a heat resistance of, for example, about 300° C. or more. Alternatively, the thermoplastic resin layer 63 may be provided or affixed directly on the circuit formation surface side of the IC chip 61 by subjecting the surface on the circuit formation surface side of the IC chip 61 to surface roughening treatment.
  • FIG. 13 is a cross-sectional view of a composite device 106 according to the sixth preferred embodiment. The module substrate 50 is a laminate including a plurality of thermoplastic resin layers, for example, LCP, PI, and the like. The mounted component 60 including a thermoplastic resin is mounted inside the module substrate 50. The bonding layer 30 is formed in a bonded portion between the thermoplastic resin layer 63 of the mounted component 60 including the thermoplastic resin and the thermoplastic resin layer of the module substrate 50.
  • Surface mount components 41, 42, 43 and the like are mounted on the upper surface of the module substrate 50. The terminal electrode 54 is formed on the mounting surface of the module substrate 50, that is, on the lower surface of the module substrate 50 in the direction shown in FIG. 13. The composite device 105 is provided by connecting the terminal electrode 54 to the land of the mother board.
    • Seventh Preferred Embodiment
  • A seventh preferred embodiment of the present invention shows an example in which a bonded surface of a surface mount component and a bonded surface of a module substrate are bonded together through a bonding layer of a thermoplastic resin layer.
  • FIGS. 14A-14C are cross-sectional views showing a composite device 107 according to the seventh preferred embodiment. FIGS. 14A and 14B are cross-sectional views each showing a state during manufacturing of the composite device 107. FIG. 14C is a cross-sectional view of the composite device 106 after manufacturing is completed. The mounted component 20 is mounted in the module substrate 50 in the same or a similar arrangement as the fourth preferred embodiment described above.
  • As shown in FIG. 14A, the thermoplastic resin layer 51 is affixed to the upper surface of the module substrate 50. This thermoplastic resin layer 51 is the same as or similar to the thermoplastic resin layer defining the substrate 50. The thermoplastic resin layer 51 is a polymer with a comparatively low melting point, preferably lower than that of the thermoplastic resin layer defining the substrate 50, for example, and the thickness of the thermoplastic resin layer 51 is, for example, about 20 μm to about 30 μm. The thermoplastic resin layer 51 includes openings 52 at positions at which the conductive bonding materials 53 are to be included. In addition, as shown in FIG. 14B, the conductive bonding materials 53 are provided in the openings 52. The conductive bonding materials 53 preferably include features similar to the conductive bonding material 31 described above with respect to the third and fourth preferred embodiments. Subsequently, as shown in FIG. 14C, surface mount components 70, 42 are mounted and heated. This causes the conductive bonding materials 53 to solidify. In other words, by heating the conductive bonding materials 53 to or above the melting temperature of the low-melting-point metal powder (for example, about 230° C. or more), Sn and Cu—Ni alloy (or Cu—Mn alloy) are reacted with each other to form the intermetallic compound. In addition, the bonding layer 30 is formed in a bonded portion between the lower surface of each of the surface mount components 70, 42 and the thermoplastic resin layer 51.
  • Accordingly, preferred embodiments of the present invention are able to also be applied to a configuration in which the bonded surface of the surface mount component and the bonded surface of the substrate are bonded together through the bonding layer of the thermoplastic resin layer.
  • While preferred embodiments of the present invention have been described above, it is to be understood that variations and modifications will be apparent to those skilled in the art without departing from the scope and spirit of the present invention. The scope of the present invention, therefore, is to be determined solely by the following claims.

Claims (20)

What is claimed is:
1. A composite device comprising:
a substrate; and
a mounted component mounted to a surface of the substrate; wherein
the substrate includes a first thermoplastic resin layer;
at least a surface of the mounted component includes a second thermoplastic resin layer that includes a same or a similar material as that of the first thermoplastic resin layer; and
a conductive bonded portion including a conductive bonding material is provided between the second thermoplastic resin layer and the first thermoplastic resin layer; and
a bonding layer that bonds the second thermoplastic resin layer and the first thermoplastic resin layer together is provided between the second thermoplastic resin layer and the first thermoplastic resin layer.
2. The composite device according to claim 1, wherein at least one of the first thermoplastic resin layer and the second thermoplastic resin layer is flexible.
3. The composite device according to claim 1, wherein the mounted component is a component in which an IC chip is on a surface of a base material of the second thermoplastic resin layer.
4. The composite device according to claim 3, wherein the mounted component includes, around the IC chip, a protective layer comprising a third thermoplastic resin layer that includes a same or a similar material as that of the second thermoplastic resin layer.
5. The composite device according to claim 3, wherein the mounted component includes, around the IC chip, a protective layer comprising a thermosetting resin layer.
6. The composite device according to claim 1, wherein the mounted component is a component in which a base material of the second thermoplastic resin layer includes a built-in IC chip.
7. The composite device according to claim 1, wherein the mounted component is a component in which the second thermoplastic resin layer is affixed to a portion of the IC chip.
8. The composite device according to claim 1, wherein the substrate includes a structure in which a plurality of thermoplastic resin layers including the first thermoplastic resin layer are laminated.
9. The composite device according to claim 1, wherein the substrate is a collective substrate including a plurality of child board regions, and the mounted component is an RFIC package and is connected to a portion of a conductive pattern at an edge of the collective substrate.
10. The composite device according to claim 1, wherein between the second thermoplastic resin layer and the first thermoplastic resin layer, all bonding regions other than the conductive bonded portion define the bonding layer.
11. The composite device according to claim 1, wherein the conductive bonded portion is embedded into the substrate.
12. The composite device according to claim 9, wherein the RFIC package communicates in a UHF band.
13. The composite device according to claim 9, wherein the plurality of child board regions are arranged in a lattice shape.
14. The composite device according to claim 9, wherein the conductive pattern includes a loop portion.
15. The composite device according to claim 14, wherein the loop portion provides impedance matching between the mounted component and the conductive pattern.
16. The composite device according to claim 3, wherein a circuit pattern is located inside the base material.
17. The composite device according to claim 16, wherein the circuit pattern includes a resonant circuit with a predetermined resonance frequency.
18. The composite device according to claim 3, wherein the IC chip is mounted on the base material by a conductive bonding material.
19. The composite device according to claim 1, wherein the conductive bonding material is a paste that solidifies when subjected to thermal treatment.
20. The composite device according to claim 19, wherein
the conductive bonding material includes a metal powder and an alloy powder;
the alloy powder defines an intermetallic compound with the metal powder.
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